JPS5066185A - - Google Patents

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Publication number
JPS5066185A
JPS5066185A JP11390273A JP11390273A JPS5066185A JP S5066185 A JPS5066185 A JP S5066185A JP 11390273 A JP11390273 A JP 11390273A JP 11390273 A JP11390273 A JP 11390273A JP S5066185 A JPS5066185 A JP S5066185A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11390273A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11390273A priority Critical patent/JPS5066185A/ja
Publication of JPS5066185A publication Critical patent/JPS5066185A/ja
Pending legal-status Critical Current

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  • Element Separation (AREA)
JP11390273A 1973-10-12 1973-10-12 Pending JPS5066185A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11390273A JPS5066185A (ja) 1973-10-12 1973-10-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11390273A JPS5066185A (ja) 1973-10-12 1973-10-12

Publications (1)

Publication Number Publication Date
JPS5066185A true JPS5066185A (ja) 1975-06-04

Family

ID=14624013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11390273A Pending JPS5066185A (ja) 1973-10-12 1973-10-12

Country Status (1)

Country Link
JP (1) JPS5066185A (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5830145A (ja) * 1981-08-17 1983-02-22 Sony Corp 半導体装置の製造方法
JPS5939045A (ja) * 1982-08-26 1984-03-03 Toko Inc 絶縁分離集積回路用基板の製造方法
JPS5939044A (ja) * 1982-08-26 1984-03-03 Toko Inc 絶縁分離集積回路用基板の製造方法
JPS59224156A (ja) * 1983-06-03 1984-12-17 Agency Of Ind Science & Technol 絶縁体分離基板の製造方法
JPS62105448A (ja) * 1985-11-01 1987-05-15 Nec Corp 半導体装置およびその製造方法
JPS63170960A (ja) * 1987-01-08 1988-07-14 Fujitsu Ltd 赤外線検知素子の製造方法
JPH01251636A (ja) * 1988-03-31 1989-10-06 Toshiba Corp 誘電体分離ウェハの製造方法
JPH01503026A (ja) * 1987-01-27 1989-10-12 アドバンスト　マイクロ　デバイシス，インコーポレイテッド 絶縁体上に薄い単結晶シリコン島状部を製造する方法
JPH02110968A (ja) * 1987-11-16 1990-04-24 Crystallume 半導体素子及びその製作方法並びに多層半導体装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5830145A (ja) * 1981-08-17 1983-02-22 Sony Corp 半導体装置の製造方法
JPS5939045A (ja) * 1982-08-26 1984-03-03 Toko Inc 絶縁分離集積回路用基板の製造方法
JPS5939044A (ja) * 1982-08-26 1984-03-03 Toko Inc 絶縁分離集積回路用基板の製造方法
JPS59224156A (ja) * 1983-06-03 1984-12-17 Agency Of Ind Science & Technol 絶縁体分離基板の製造方法
JPS62105448A (ja) * 1985-11-01 1987-05-15 Nec Corp 半導体装置およびその製造方法
JPS63170960A (ja) * 1987-01-08 1988-07-14 Fujitsu Ltd 赤外線検知素子の製造方法
JPH01503026A (ja) * 1987-01-27 1989-10-12 アドバンスト　マイクロ　デバイシス，インコーポレイテッド 絶縁体上に薄い単結晶シリコン島状部を製造する方法
JPH02110968A (ja) * 1987-11-16 1990-04-24 Crystallume 半導体素子及びその製作方法並びに多層半導体装置
JPH01251636A (ja) * 1988-03-31 1989-10-06 Toshiba Corp 誘電体分離ウェハの製造方法

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