JPS50135992A - - Google Patents

Info

Publication number
JPS50135992A
JPS50135992A JP50041382A JP4138275A JPS50135992A JP S50135992 A JPS50135992 A JP S50135992A JP 50041382 A JP50041382 A JP 50041382A JP 4138275 A JP4138275 A JP 4138275A JP S50135992 A JPS50135992 A JP S50135992A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50041382A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19742415408 external-priority patent/DE2415408C2/de
Application filed filed Critical
Publication of JPS50135992A publication Critical patent/JPS50135992A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP50041382A 1974-03-29 1975-03-28 Pending JPS50135992A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742415408 DE2415408C2 (de) 1974-03-29 Si-MESFET auf Isolatorsubstrat und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
JPS50135992A true JPS50135992A (ja) 1975-10-28

Family

ID=5911655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50041382A Pending JPS50135992A (ja) 1974-03-29 1975-03-28

Country Status (7)

Country Link
US (1) US3997908A (ja)
JP (1) JPS50135992A (ja)
CA (1) CA1028067A (ja)
FR (1) FR2266310B1 (ja)
GB (1) GB1507091A (ja)
IT (1) IT1034678B (ja)
SE (1) SE401582B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135977A (en) * 1980-03-03 1981-10-23 Raytheon Co Field effect device and method of producing same

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2529951A1 (de) * 1975-07-04 1977-01-27 Siemens Ag Lateraler, bipolarer transistor
DE2624339C2 (de) * 1976-05-31 1986-09-11 Siemens AG, 1000 Berlin und 8000 München Schottky-Transistorlogik
DE2624409A1 (de) * 1976-05-31 1977-12-15 Siemens Ag Schottky-transistor-logik
US4157556A (en) * 1977-01-06 1979-06-05 Varian Associates, Inc. Heterojunction confinement field effect transistor
JPS53138281A (en) * 1977-05-09 1978-12-02 Nec Corp Insulated-gate field effect transistor
US4183033A (en) * 1978-03-13 1980-01-08 National Research Development Corporation Field effect transistors
US4202001A (en) * 1978-05-05 1980-05-06 Rca Corporation Semiconductor device having grid for plating contacts
US4393578A (en) * 1980-01-02 1983-07-19 General Electric Company Method of making silicon-on-sapphire FET
GB2140617B (en) * 1980-03-03 1985-06-19 Raytheon Co Methods of forming a field effect transistor
US4523368A (en) * 1980-03-03 1985-06-18 Raytheon Company Semiconductor devices and manufacturing methods
USH368H (en) 1980-09-16 1987-11-03 The United States Of America As Represented By The Secretary Of The Navy Field-effect transistor
GB2090053B (en) * 1980-12-19 1984-09-19 Philips Electronic Associated Mesfet
SE8101994L (sv) * 1981-03-27 1982-09-28 Tove Per Arne Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd
US4418470A (en) * 1981-10-21 1983-12-06 General Electric Company Method for fabricating silicon-on-sapphire monolithic microwave integrated circuits
US4575746A (en) * 1983-11-28 1986-03-11 Rca Corporation Crossunders for high density SOS integrated circuits
US4688062A (en) * 1984-06-29 1987-08-18 Raytheon Company Semiconductor structure and method of manufacture
US4763183A (en) * 1984-08-01 1988-08-09 American Telephone And Telegraph Co., At&T Bell Laboratories Semiconductor-on-insulator (SOI) devices and SOI IC fabrication method
US4636822A (en) * 1984-08-27 1987-01-13 International Business Machines Corporation GaAs short channel lightly doped drain MESFET structure and fabrication
JPH01187837A (ja) * 1988-01-22 1989-07-27 Agency Of Ind Science & Technol 半導体集積回路
JP2746482B2 (ja) * 1991-02-14 1998-05-06 三菱電機株式会社 電界効果型トランジスタ及びその製造方法
USH1435H (en) * 1991-10-21 1995-05-02 Cherne Richard D SOI CMOS device having body extension for providing sidewall channel stop and bodytie

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783052A (en) * 1972-11-10 1974-01-01 Motorola Inc Process for manufacturing integrated circuits on an alumina substrate
US3890632A (en) * 1973-12-03 1975-06-17 Rca Corp Stabilized semiconductor devices and method of making same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135977A (en) * 1980-03-03 1981-10-23 Raytheon Co Field effect device and method of producing same

Also Published As

Publication number Publication date
FR2266310B1 (ja) 1979-06-08
DE2415408B1 (de) 1975-09-18
DE2415408A1 (ja) 1975-09-18
SE401582B (sv) 1978-05-16
US3997908A (en) 1976-12-14
SE7503525L (ja) 1975-09-30
IT1034678B (it) 1979-10-10
CA1028067A (en) 1978-03-14
FR2266310A1 (ja) 1975-10-24
GB1507091A (en) 1978-04-12

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