JPS497391B1 - - Google Patents

Info

Publication number
JPS497391B1
JPS497391B1 JP42065695A JP6569567A JPS497391B1 JP S497391 B1 JPS497391 B1 JP S497391B1 JP 42065695 A JP42065695 A JP 42065695A JP 6569567 A JP6569567 A JP 6569567A JP S497391 B1 JPS497391 B1 JP S497391B1
Authority
JP
Japan
Prior art keywords
silicon
regions
width
oxide
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP42065695A
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS497391B1 publication Critical patent/JPS497391B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
JP42065695A 1966-10-13 1967-10-12 Pending JPS497391B1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58641166A 1966-10-13 1966-10-13

Publications (1)

Publication Number Publication Date
JPS497391B1 true JPS497391B1 (https=) 1974-02-20

Family

ID=24345605

Family Applications (1)

Application Number Title Priority Date Filing Date
JP42065695A Pending JPS497391B1 (https=) 1966-10-13 1967-10-12

Country Status (7)

Country Link
US (1) US3427514A (https=)
JP (1) JPS497391B1 (https=)
BE (1) BE705103A (https=)
DE (1) DE1614389B2 (https=)
GB (1) GB1183967A (https=)
NL (1) NL6713862A (https=)
SE (1) SE339269B (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475234A (en) * 1967-03-27 1969-10-28 Bell Telephone Labor Inc Method for making mis structures
GB1316555A (https=) * 1969-08-12 1973-05-09
US3652906A (en) * 1970-03-24 1972-03-28 Alton O Christensen Mosfet decoder topology
US3868721A (en) * 1970-11-02 1975-02-25 Motorola Inc Diffusion guarded metal-oxide-silicon field effect transistors
JPS5546068B2 (https=) * 1973-05-22 1980-11-21
JPS5951141B2 (ja) * 1977-03-10 1984-12-12 三洋電機株式会社 選局装置
US4235011A (en) * 1979-03-28 1980-11-25 Honeywell Inc. Semiconductor apparatus
NL8104414A (nl) * 1981-09-25 1983-04-18 Philips Nv Halfgeleiderinrichting met veldeffekttransistor.
US4409499A (en) * 1982-06-14 1983-10-11 Standard Microsystems Corporation High-speed merged plane logic function array
US4920393A (en) * 1987-01-08 1990-04-24 Texas Instruments Incorporated Insulated-gate field-effect semiconductor device with doped regions in channel to raise breakdown voltage
US4947220A (en) * 1987-08-27 1990-08-07 Yoder Max N Yoked, orthogonally distributed equal reactance amplifier
US5272369A (en) * 1990-03-28 1993-12-21 Interuniversitair Micro-Elektronica Centrum Vzw Circuit element with elimination of kink effect
JP2003060197A (ja) * 2001-08-09 2003-02-28 Sanyo Electric Co Ltd 半導体装置
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US8119210B2 (en) * 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US7645710B2 (en) * 2006-03-09 2010-01-12 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7837838B2 (en) * 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
US7678710B2 (en) * 2006-03-09 2010-03-16 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US20070259111A1 (en) * 2006-05-05 2007-11-08 Singh Kaushal K Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
WO2008039845A2 (en) * 2006-09-26 2008-04-03 Applied Materials, Inc. Fluorine plasma treatment of high-k gate stack for defect passivation

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1094068A (en) * 1963-12-26 1967-12-06 Rca Corp Semiconductive devices and methods of producing them
US3355598A (en) * 1964-11-25 1967-11-28 Rca Corp Integrated logic arrays employing insulated-gate field-effect devices having a common source region and shared gates
GB1037850A (en) * 1964-12-23 1966-08-03 Associated Semiconductor Mft Improvements in or relating to semiconductor devices

Also Published As

Publication number Publication date
US3427514A (en) 1969-02-11
DE1614389A1 (de) 1970-07-02
NL6713862A (https=) 1968-04-16
DE1614389B2 (de) 1972-03-02
BE705103A (https=) 1968-02-15
GB1183967A (en) 1970-03-11
SE339269B (https=) 1971-10-04

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