JPS4959576A - - Google Patents

Info

Publication number
JPS4959576A
JPS4959576A JP7322073A JP7322073A JPS4959576A JP S4959576 A JPS4959576 A JP S4959576A JP 7322073 A JP7322073 A JP 7322073A JP 7322073 A JP7322073 A JP 7322073A JP S4959576 A JPS4959576 A JP S4959576A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7322073A
Other languages
Japanese (ja)
Other versions
JPS5142470B2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4959576A publication Critical patent/JPS4959576A/ja
Publication of JPS5142470B2 publication Critical patent/JPS5142470B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Radiography Using Non-Light Waves (AREA)
  • X-Ray Techniques (AREA)
  • ing And Chemical Polishing (AREA)
JP7322073A 1972-06-29 1973-06-28 Expired JPS5142470B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26766772A 1972-06-29 1972-06-29

Publications (2)

Publication Number Publication Date
JPS4959576A true JPS4959576A (en) 1974-06-10
JPS5142470B2 JPS5142470B2 (en) 1976-11-16

Family

ID=23019704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7322073A Expired JPS5142470B2 (en) 1972-06-29 1973-06-28

Country Status (3)

Country Link
US (1) US3742229A (en)
JP (1) JPS5142470B2 (en)
FR (1) FR2191764A5 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192178A (en) * 1975-02-10 1976-08-12
JPS51120180A (en) * 1975-04-15 1976-10-21 Nippon Telegr & Teleph Corp <Ntt> Pattern printing device
JPS52112280A (en) * 1976-03-17 1977-09-20 Mitsubishi Electric Corp X-ray exposure mask
JPS52136577A (en) * 1976-05-11 1977-11-15 Nippon Chemical Ind Aligning device
JPS5342678A (en) * 1976-09-30 1978-04-18 Nippon Telegr & Teleph Corp <Ntt> X-ray exposure method
JPS55113330A (en) * 1979-02-23 1980-09-01 Chiyou Lsi Gijutsu Kenkyu Kumiai X-ray exposure system and device

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3874916A (en) * 1972-06-23 1975-04-01 Radiant Energy Systems Mask alignment system for electron beam pattern generator
US4050817A (en) * 1973-05-03 1977-09-27 Nippon Kogaku K.K. Manufacture of multi-layer structures
GB1473301A (en) * 1973-05-03 1977-05-11 Nippon Kogaku Kk Manufacture of multi-layer structures
JPS5253462Y2 (en) * 1974-03-18 1977-12-05
US3947687A (en) * 1974-10-23 1976-03-30 The United States Of America As Represented By The Secretary Of The Air Force Collimated x-ray source for x-ray lithographic system
US3984244A (en) * 1974-11-27 1976-10-05 E. I. Du Pont De Nemours And Company Process for laminating a channeled photosensitive layer on an irregular surface
US3984680A (en) * 1975-10-14 1976-10-05 Massachusetts Institute Of Technology Soft X-ray mask alignment system
DE2604939C3 (en) * 1976-02-09 1978-07-27 Ibm Deutschland Gmbh, 7000 Stuttgart Method for producing at least one through hole, in particular a nozzle for inkjet printers
US4085329A (en) * 1976-05-03 1978-04-18 Hughes Aircraft Company Hard X-ray and fluorescent X-ray detection of alignment marks for precision mask alignment
DE2635275C2 (en) * 1976-08-05 1984-09-06 Siemens AG, 1000 Berlin und 8000 München Method for adjusting a disk-shaped substrate relative to a photomask in an X-ray exposure apparatus
US4131472A (en) * 1976-09-15 1978-12-26 Align-Rite Corporation Method for increasing the yield of batch processed microcircuit semiconductor devices
JPS5350680A (en) * 1976-10-19 1978-05-09 Nec Corp Transfer mask for x-ray exposure and its production
US4134066A (en) * 1977-03-24 1979-01-09 International Business Machines Corporation Wafer indexing system using a grid pattern and coding and orientation marks in each grid cell
US4200395A (en) * 1977-05-03 1980-04-29 Massachusetts Institute Of Technology Alignment of diffraction gratings
DE2722958A1 (en) * 1977-05-20 1978-11-23 Siemens Ag METHOD FOR ADJUSTING A SEMICONDUCTOR DISC RELATIVE TO A RADIATION MASK IN X-RAY PHOTOLITHOGRAPHY
DE2723902C2 (en) * 1977-05-26 1983-12-08 Siemens AG, 1000 Berlin und 8000 München Method for parallel alignment and adjustment of the position of a semiconductor wafer relative to an irradiation mask in X-ray photolithography
US4215192A (en) * 1978-01-16 1980-07-29 The Perkin-Elmer Corporation X-ray lithography apparatus and method of use
US4342917A (en) * 1978-01-16 1982-08-03 The Perkin-Elmer Corporation X-ray lithography apparatus and method of use
US4184078A (en) * 1978-08-15 1980-01-15 The United States Of America As Represented By The Secretary Of The Navy Pulsed X-ray lithography
USRE33992E (en) * 1978-08-15 1992-07-14 The United States Of America As Represented By The Secretary Of The Navy Pulsed X-ray lithography
US4171489A (en) * 1978-09-13 1979-10-16 Bell Telephone Laboratories, Incorporated Radiation mask structure
DE2841124C2 (en) * 1978-09-21 1984-09-13 Siemens AG, 1000 Berlin und 8000 München Process for the production of electronic semiconductor components by X-ray lithography
US4301237A (en) * 1979-07-12 1981-11-17 Western Electric Co., Inc. Method for exposing substrates to X-rays
US4260670A (en) * 1979-07-12 1981-04-07 Western Electric Company, Inc. X-ray mask
US4246054A (en) * 1979-11-13 1981-01-20 The Perkin-Elmer Corporation Polymer membranes for X-ray masks
GB2066487B (en) * 1979-12-18 1983-11-23 Philips Electronic Associated Alignment of exposure masks
US4335313A (en) * 1980-05-12 1982-06-15 The Perkin-Elmer Corporation Method and apparatus for aligning an opaque mask with an integrated circuit wafer
DE3118802A1 (en) * 1980-05-14 1982-02-25 Canon K.K., Tokyo PRESSURE TRANSFER DEVICE
US4357540A (en) * 1980-12-19 1982-11-02 International Business Machines Corporation Semiconductor device array mask inspection method and apparatus
US4343878A (en) * 1981-01-02 1982-08-10 Amdahl Corporation System for providing photomask alignment keys in semiconductor integrated circuit processing
FR2514195A1 (en) * 1981-10-05 1983-04-08 Merlin Gerin MULTIPOLAR CIRCUIT BREAKER WITH REMOVABLE TRIGGER BLOCK
US4477921A (en) * 1981-11-27 1984-10-16 Spire Corporation X-Ray lithography source tube
JPS5968928A (en) * 1982-10-13 1984-04-19 Pioneer Electronic Corp Manufacture of semiconductor device
US4576832A (en) * 1982-12-30 1986-03-18 International Business Machines Corporation Self-aligning mask
US4760265A (en) * 1986-01-18 1988-07-26 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Method and device for detecting defects of patterns in microelectronic devices
JPH0746681B2 (en) * 1986-10-28 1995-05-17 富士通株式会社 Method of manufacturing mask for X-ray stepper
US5097492A (en) * 1987-10-30 1992-03-17 Four Pi Systems Corporation Automated laminography system for inspection of electronics
US5561696A (en) * 1987-10-30 1996-10-01 Hewlett-Packard Company Method and apparatus for inspecting electrical connections
US5621811A (en) * 1987-10-30 1997-04-15 Hewlett-Packard Co. Learning method and apparatus for detecting and controlling solder defects
US4926452A (en) * 1987-10-30 1990-05-15 Four Pi Systems Corporation Automated laminography system for inspection of electronics
US5081656A (en) * 1987-10-30 1992-01-14 Four Pi Systems Corporation Automated laminography system for inspection of electronics
US5262257A (en) * 1989-07-13 1993-11-16 Canon Kabushiki Kaisha Mask for lithography
JPH03248414A (en) * 1990-02-26 1991-11-06 Mitsubishi Electric Corp Formation of fine pattern using selective surface reaction
US5259012A (en) * 1990-08-30 1993-11-02 Four Pi Systems Corporation Laminography system and method with electromagnetically directed multipath radiation source
US5124561A (en) * 1991-04-04 1992-06-23 International Business Machines Corporation Process for X-ray mask warpage reduction
US5382483A (en) * 1992-01-13 1995-01-17 International Business Machines Corporation Self-aligned phase-shifting mask
JPH0815854A (en) * 1994-06-30 1996-01-19 Fujitsu Ltd Production of semiconductor device
US5687209A (en) * 1995-04-11 1997-11-11 Hewlett-Packard Co. Automatic warp compensation for laminographic circuit board inspection
US5583904A (en) * 1995-04-11 1996-12-10 Hewlett-Packard Co. Continuous linear scan laminography system and method
US5570405A (en) * 1995-06-06 1996-10-29 International Business Machines Corporation Registration and alignment technique for X-ray mask fabrication
US7758794B2 (en) * 2001-10-29 2010-07-20 Princeton University Method of making an article comprising nanoscale patterns with reduced edge roughness
US6309580B1 (en) * 1995-11-15 2001-10-30 Regents Of The University Of Minnesota Release surfaces, particularly for use in nanoimprint lithography
US20040137734A1 (en) * 1995-11-15 2004-07-15 Princeton University Compositions and processes for nanoimprinting
US7141450B2 (en) * 2002-04-08 2006-11-28 Lucent Technologies Inc. Flip-chip alignment method
JP2006259143A (en) * 2005-03-16 2006-09-28 Fuji Xerox Co Ltd Arranging device and method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3113896A (en) * 1961-01-31 1963-12-10 Space Technology Lab Inc Electron beam masking for etching electrical circuits
US3447924A (en) * 1965-08-16 1969-06-03 Charles J Trzyna Aligning method
US3521058A (en) * 1965-09-08 1970-07-21 Georg S Mittelstaedt Method of improving the definition of detail of both hard and soft substance in radiographs
US3637380A (en) * 1967-06-26 1972-01-25 Teeg Research Inc Methods for electrochemically making metallic patterns by means of radiation-sensitive elements

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192178A (en) * 1975-02-10 1976-08-12
JPS51120180A (en) * 1975-04-15 1976-10-21 Nippon Telegr & Teleph Corp <Ntt> Pattern printing device
JPS5519425B2 (en) * 1975-04-15 1980-05-26
JPS52112280A (en) * 1976-03-17 1977-09-20 Mitsubishi Electric Corp X-ray exposure mask
JPS5746648B2 (en) * 1976-03-17 1982-10-05
JPS52136577A (en) * 1976-05-11 1977-11-15 Nippon Chemical Ind Aligning device
JPS5546053B2 (en) * 1976-05-11 1980-11-21
JPS5342678A (en) * 1976-09-30 1978-04-18 Nippon Telegr & Teleph Corp <Ntt> X-ray exposure method
JPS5343022B2 (en) * 1976-09-30 1978-11-16
JPS55113330A (en) * 1979-02-23 1980-09-01 Chiyou Lsi Gijutsu Kenkyu Kumiai X-ray exposure system and device

Also Published As

Publication number Publication date
JPS5142470B2 (en) 1976-11-16
US3742229A (en) 1973-06-26
FR2191764A5 (en) 1974-02-01
DE2333902B2 (en) 1976-02-05
DE2333902A1 (en) 1974-01-17

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