JPS4959575A - - Google Patents

Info

Publication number
JPS4959575A
JPS4959575A JP7321973A JP7321973A JPS4959575A JP S4959575 A JPS4959575 A JP S4959575A JP 7321973 A JP7321973 A JP 7321973A JP 7321973 A JP7321973 A JP 7321973A JP S4959575 A JPS4959575 A JP S4959575A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7321973A
Other languages
Japanese (ja)
Other versions
JPS5142469B2 (pt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4959575A publication Critical patent/JPS4959575A/ja
Publication of JPS5142469B2 publication Critical patent/JPS5142469B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Radiography Using Non-Light Waves (AREA)
  • X-Ray Techniques (AREA)
  • ing And Chemical Polishing (AREA)
JP7321973A 1972-06-29 1973-06-28 Expired JPS5142469B2 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26767272A 1972-06-29 1972-06-29

Publications (2)

Publication Number Publication Date
JPS4959575A true JPS4959575A (pt) 1974-06-10
JPS5142469B2 JPS5142469B2 (pt) 1976-11-16

Family

ID=23019723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7321973A Expired JPS5142469B2 (pt) 1972-06-29 1973-06-28

Country Status (4)

Country Link
US (1) US3742230A (pt)
JP (1) JPS5142469B2 (pt)
DE (1) DE2333787C3 (pt)
FR (1) FR2202425B1 (pt)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5184641A (pt) * 1974-12-31 1976-07-24 Ibm
JPS5192178A (pt) * 1975-02-10 1976-08-12
JPS5255382A (en) * 1975-10-28 1977-05-06 Hughes Aircraft Co Method of forming resist pattern and method of making ion absorption mask used therefor
JPS5375770A (en) * 1976-12-17 1978-07-05 Hitachi Ltd X-ray copying mask
JPH0473765A (ja) * 1990-07-16 1992-03-09 Toshiba Corp Ｘ線透過膜およびその製法

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3873824A (en) * 1973-10-01 1975-03-25 Texas Instruments Inc X-ray lithography mask
US3916200A (en) * 1974-09-04 1975-10-28 Us Energy Window for radiation detectors and the like
US3947687A (en) * 1974-10-23 1976-03-30 The United States Of America As Represented By The Secretary Of The Air Force Collimated x-ray source for x-ray lithographic system
US3984680A (en) * 1975-10-14 1976-10-05 Massachusetts Institute Of Technology Soft X-ray mask alignment system
DE2606169C2 (de) * 1976-02-17 1983-09-01 Polymer-Physik GmbH & Co KG, 2844 Lemförde Elektronenaustrittsfenster für eine Elektronenstrahlquelle
US4198263A (en) * 1976-03-30 1980-04-15 Tokyo Shibaura Electric Co., Ltd. Mask for soft X-rays and method of manufacture
JPS5350680A (en) * 1976-10-19 1978-05-09 Nec Corp Transfer mask for x-ray exposure and its production
US4170512A (en) * 1977-05-26 1979-10-09 Massachusetts Institute Of Technology Method of manufacture of a soft-X-ray mask
US4218503A (en) * 1977-12-02 1980-08-19 Rockwell International Corporation X-ray lithographic mask using rare earth and transition element compounds and method of fabrication thereof
US4215192A (en) * 1978-01-16 1980-07-29 The Perkin-Elmer Corporation X-ray lithography apparatus and method of use
US4342917A (en) * 1978-01-16 1982-08-03 The Perkin-Elmer Corporation X-ray lithography apparatus and method of use
US4171489A (en) * 1978-09-13 1979-10-16 Bell Telephone Laboratories, Incorporated Radiation mask structure
US4384919A (en) * 1978-11-13 1983-05-24 Sperry Corporation Method of making x-ray masks
US4536882A (en) * 1979-01-12 1985-08-20 Rockwell International Corporation Embedded absorber X-ray mask and method for making same
US4254174A (en) * 1979-03-29 1981-03-03 Massachusetts Institute Of Technology Supported membrane composite structure and its method of manufacture
DE2922416A1 (de) * 1979-06-01 1980-12-11 Ibm Deutschland Schattenwurfmaske zum strukturieren von oberflaechenbereichen und verfahren zu ihrer herstellung
US4260670A (en) * 1979-07-12 1981-04-07 Western Electric Company, Inc. X-ray mask
US4301237A (en) * 1979-07-12 1981-11-17 Western Electric Co., Inc. Method for exposing substrates to X-rays
AT371947B (de) * 1979-12-27 1983-08-10 Rudolf Sacher Ges M B H Freitragende maske, verfahren zur herstellung derselben und verfahren zum maskieren von substraten
US4557986A (en) * 1980-12-17 1985-12-10 Westinghouse Electric Corp. High resolution lithographic process
US4454209A (en) * 1980-12-17 1984-06-12 Westinghouse Electric Corp. High resolution soft x-ray or ion beam lithographic mask
US4349621A (en) * 1981-04-13 1982-09-14 General Electric Company Process for X-ray microlithography using thin film eutectic masks
DE3119682A1 (de) * 1981-05-18 1982-12-02 Philips Patentverwaltung Gmbh, 2000 Hamburg "verfahren zur herstellung einer maske fuer die mustererzeugung in lackschichten mittels strahlungslithographie"
JPS57211732A (en) * 1981-06-24 1982-12-25 Toshiba Corp X ray exposing mask and manufacture thereof
US4477921A (en) * 1981-11-27 1984-10-16 Spire Corporation X-Ray lithography source tube
JPS5944102U (ja) * 1982-05-14 1984-03-23 株式会社三英社製作所 高圧キヤビネツト型開閉装置
DE3232498A1 (de) * 1982-09-01 1984-03-01 Philips Patentverwaltung Gmbh, 2000 Hamburg Maske fuer die mustererzeugung in lackschichten mittels roentgenstrahllithographie und verfahren zu ihrer herstellung
US4468282A (en) * 1982-11-22 1984-08-28 Hewlett-Packard Company Method of making an electron beam window
US4576832A (en) * 1982-12-30 1986-03-18 International Business Machines Corporation Self-aligning mask
DE3338717A1 (de) * 1983-10-25 1985-05-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung einer roentgenmaske mit metalltraegerfolie
DE3425063A1 (de) * 1984-07-07 1986-02-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Maske fuer die roentgenlithographie
US4708919A (en) * 1985-08-02 1987-11-24 Micronix Corporation Process for manufacturing a mask for use in X-ray photolithography using a monolithic support and resulting structure
JPH0658874B2 (ja) * 1986-03-18 1994-08-03 富士通株式会社 Ｘ線マスクの製造方法
EP0244496B1 (de) * 1986-05-06 1991-01-16 Ibm Deutschland Gmbh Maske für die Ionen-, Elektronen- oder Röntgenstrahllithographie und Verfahren zur ihrer Herstellung
JPH02170410A (ja) * 1988-12-23 1990-07-02 Hitachi Ltd 放射線露光用マスクおよびこれを用いた放射線露光方法
IL88837A (en) * 1988-12-30 1993-08-18 Technion Res & Dev Foundation Method for the preparation of mask for x-ray lithography
US5146481A (en) * 1991-06-25 1992-09-08 Diwakar Garg Diamond membranes for X-ray lithography
SG43954A1 (en) * 1991-11-15 1997-11-14 Canon Kk X-ray mask structure and x-ray exposing method and semiconductor device manufactured by use of x-ray mask structure and method for manufacturing x-ray mask structure
US5529862A (en) * 1993-09-01 1996-06-25 Texas Instruments Incorporated Method of forming a low distortion stencil mask
US5491331A (en) * 1994-04-25 1996-02-13 Pilot Industries, Inc. Soft x-ray imaging device
US5570405A (en) * 1995-06-06 1996-10-29 International Business Machines Corporation Registration and alignment technique for X-ray mask fabrication
AU3234097A (en) 1996-06-12 1998-01-07 American International Technologies, Inc. Actinic radiation source having anode that includes a window area formed by a thin, monolithic silicon membrane
US5919364A (en) * 1996-06-24 1999-07-06 Regents Of The University Of California Microfabricated filter and shell constructed with a permeable membrane
JP4346063B2 (ja) * 2002-12-03 2009-10-14 大日本印刷株式会社 転写マスクブランク、転写マスク並びにその転写マスクを用いた転写方法
US9275769B2 (en) * 2013-03-14 2016-03-01 Pcc Structurals, Inc. Marking template for radiography
US9152036B2 (en) * 2013-09-23 2015-10-06 National Synchrotron Radiation Research Center X-ray mask structure and method for preparing the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3637380A (en) * 1967-06-26 1972-01-25 Teeg Research Inc Methods for electrochemically making metallic patterns by means of radiation-sensitive elements

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5184641A (pt) * 1974-12-31 1976-07-24 Ibm
JPS5516070B2 (pt) * 1974-12-31 1980-04-28
JPS5192178A (pt) * 1975-02-10 1976-08-12
JPS5255382A (en) * 1975-10-28 1977-05-06 Hughes Aircraft Co Method of forming resist pattern and method of making ion absorption mask used therefor
JPS5428267B2 (pt) * 1975-10-28 1979-09-14
JPS5375770A (en) * 1976-12-17 1978-07-05 Hitachi Ltd X-ray copying mask
JPS545265B2 (pt) * 1976-12-17 1979-03-15
JPH0473765A (ja) * 1990-07-16 1992-03-09 Toshiba Corp Ｘ線透過膜およびその製法

Also Published As

Publication number Publication date
DE2333787A1 (de) 1974-01-17
US3742230A (en) 1973-06-26
FR2202425B1 (pt) 1976-05-28
DE2333787C3 (de) 1978-06-15
DE2333787B2 (de) 1977-10-20
FR2202425A1 (pt) 1974-05-03
JPS5142469B2 (pt) 1976-11-16

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