JPS4946625A - - Google Patents

Info

Publication number
JPS4946625A
JPS4946625A JP48077186A JP7718673A JPS4946625A JP S4946625 A JPS4946625 A JP S4946625A JP 48077186 A JP48077186 A JP 48077186A JP 7718673 A JP7718673 A JP 7718673A JP S4946625 A JPS4946625 A JP S4946625A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48077186A
Other languages
Japanese (ja)
Other versions
JPS5222495B2 (fr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4946625A publication Critical patent/JPS4946625A/ja
Publication of JPS5222495B2 publication Critical patent/JPS5222495B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP48077186A 1972-07-10 1973-07-10 Expired JPS5222495B2 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US27033872A 1972-07-10 1972-07-10

Publications (2)

Publication Number Publication Date
JPS4946625A true JPS4946625A (fr) 1974-05-04
JPS5222495B2 JPS5222495B2 (fr) 1977-06-17

Family

ID=23030921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48077186A Expired JPS5222495B2 (fr) 1972-07-10 1973-07-10

Country Status (9)

Country Link
JP (1) JPS5222495B2 (fr)
BE (1) BE802002A (fr)
CA (1) CA1106477A (fr)
DE (1) DE2334116C3 (fr)
FR (1) FR2197287B1 (fr)
GB (1) GB1413092A (fr)
IT (1) IT991964B (fr)
NL (1) NL165607C (fr)
SE (1) SE382148B (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49131525A (fr) * 1973-04-05 1974-12-17
JPS5020679A (fr) * 1973-05-21 1975-03-05
JPS5140790A (fr) * 1974-10-04 1976-04-05 Oki Electric Ind Co Ltd
JPS5175321A (fr) * 1974-12-25 1976-06-29 Sony Corp
JPS60163876U (ja) * 1985-03-06 1985-10-31 富士通株式会社 半導体撮像装置
JPS60244064A (ja) * 1984-05-18 1985-12-03 Nec Corp 固体撮像装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2813254C2 (de) * 1978-03-28 1979-12-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Eindimensionaler CCD-Sensor mit Überlaufvorrichtung
JPS5847378A (ja) * 1981-09-17 1983-03-19 Canon Inc 撮像素子
GB2181012B (en) * 1985-09-20 1989-09-13 Philips Electronic Associated Imaging devices comprising photovoltaic detector elements

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1566558A (fr) * 1968-03-20 1969-05-09
IE34899B1 (en) * 1970-02-16 1975-09-17 Western Electric Co Improvements in or relating to semiconductor devices
FR2101023B1 (fr) * 1970-08-07 1973-11-23 Thomson Csf

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49131525A (fr) * 1973-04-05 1974-12-17
JPS5020679A (fr) * 1973-05-21 1975-03-05
JPS5738035B2 (fr) * 1973-05-21 1982-08-13
JPS5140790A (fr) * 1974-10-04 1976-04-05 Oki Electric Ind Co Ltd
JPS5175321A (fr) * 1974-12-25 1976-06-29 Sony Corp
JPS5732547B2 (fr) * 1974-12-25 1982-07-12
JPS60244064A (ja) * 1984-05-18 1985-12-03 Nec Corp 固体撮像装置
JPS60163876U (ja) * 1985-03-06 1985-10-31 富士通株式会社 半導体撮像装置

Also Published As

Publication number Publication date
NL165607C (nl) 1981-04-15
FR2197287B1 (fr) 1976-05-28
BE802002A (fr) 1973-11-05
DE2334116A1 (de) 1974-01-31
NL165607B (nl) 1980-11-17
GB1413092A (en) 1975-11-05
DE2334116C3 (de) 1983-11-10
SE382148B (sv) 1976-01-12
JPS5222495B2 (fr) 1977-06-17
CA1106477A (fr) 1981-08-04
NL7309340A (fr) 1974-01-14
DE2334116B2 (de) 1977-06-30
FR2197287A1 (fr) 1974-03-22
IT991964B (it) 1975-08-30

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