JPS49115623A - - Google Patents

Info

Publication number
JPS49115623A
JPS49115623A JP49020009A JP2000974A JPS49115623A JP S49115623 A JPS49115623 A JP S49115623A JP 49020009 A JP49020009 A JP 49020009A JP 2000974 A JP2000974 A JP 2000974A JP S49115623 A JPS49115623 A JP S49115623A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49020009A
Other versions
JPS5916350B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS49115623A publication Critical patent/JPS49115623A/ja
Publication of JPS5916350B2 publication Critical patent/JPS5916350B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Amplifiers (AREA)
  • Logic Circuits (AREA)
  • Read Only Memory (AREA)
JP49020009A 1973-02-23 1974-02-21 ２進信号用再生回路 Expired JPS5916350B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2309192 1973-02-23
DE2309192A DE2309192C3 (de) 1973-02-23 1973-02-23 Regenerierschaltung nach Art eines getasteten Flipflops und Verfahren zum Betrieb einer solchen Regenerierschaltung

Publications (2)

Publication Number Publication Date
JPS49115623A true JPS49115623A (ja) 1974-11-05
JPS5916350B2 JPS5916350B2 (ja) 1984-04-14

Family

ID=5872937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49020009A Expired JPS5916350B2 (ja) 1973-02-23 1974-02-21 ２進信号用再生回路

Country Status (13)

Country Link
US (1) US3892984A (ja)
JP (1) JPS5916350B2 (ja)
AT (1) AT339955B (ja)
BE (1) BE811463A (ja)
CA (1) CA1019834A (ja)
CH (1) CH572262A5 (ja)
DE (1) DE2309192C3 (ja)
FR (1) FR2219492B1 (ja)
GB (1) GB1463382A (ja)
IT (1) IT1008878B (ja)
LU (1) LU69443A1 (ja)
NL (1) NL7402393A (ja)
SE (1) SE395980B (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49131744A (ja) * 1973-04-18 1974-12-17
JPS5024039A (ja) * 1973-06-29 1975-03-14
JPS51122343A (en) * 1975-04-21 1976-10-26 Intel Corp High density mos memory array
JPS5249981A (en) * 1975-10-17 1977-04-21 Snam Progetti Multiistage expansion desalination
JPS52108743A (en) * 1976-03-10 1977-09-12 Toshiba Corp Dynamic memory device
JPS5364434A (en) * 1976-11-19 1978-06-08 Mitsubishi Electric Corp Sense circuit of mos semiconductor memory
JPS5373039A (en) * 1976-12-13 1978-06-29 Nippon Telegr & Teleph Corp <Ntt> Sense amplifier
JPS55146695A (en) * 1975-12-29 1980-11-15 Mostek Corp Method and device for reading and refreshing optimum logic level of dynamic random access memory

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979603A (en) * 1974-08-22 1976-09-07 Texas Instruments Incorporated Regenerative charge detector for charged coupled devices
US4060737A (en) * 1974-08-22 1977-11-29 Texas Instruments Incorporated Charge coupled device shift registers having an improved regenerative charge detector
DE2443529B2 (de) * 1974-09-11 1977-09-01 Siemens AG, 1000 Berlin und 8000 München Verfahren und anordnung zum einschreiben von binaersignalen in ausgewaehlte speicherelemente eines mos-speichers
US4004284A (en) * 1975-03-05 1977-01-18 Teletype Corporation Binary voltage-differential sensing circuits, and sense/refresh amplifier circuits for random-access memories
US3976895A (en) * 1975-03-18 1976-08-24 Bell Telephone Laboratories, Incorporated Low power detector circuit
US4007381A (en) * 1975-04-18 1977-02-08 Bell Telephone Laboratories, Incorporated Balanced regenerative charge detection circuit for semiconductor charge transfer devices
US3983413A (en) * 1975-05-02 1976-09-28 Fairchild Camera And Instrument Corporation Balanced differential capacitively decoupled charge sensor
US3982140A (en) * 1975-05-09 1976-09-21 Ncr Corporation High speed bistable multivibrator circuit
US3992637A (en) * 1975-05-21 1976-11-16 Ibm Corporation Unclocked sense ampllifier
US4000413A (en) * 1975-05-27 1976-12-28 Intel Corporation Mos-ram
US3993917A (en) * 1975-05-29 1976-11-23 International Business Machines Corporation Parameter independent FET sense amplifier
US4025908A (en) * 1975-06-24 1977-05-24 International Business Machines Corporation Dynamic array with clamped bootstrap static input/output circuitry
US4021682A (en) * 1975-06-30 1977-05-03 Honeywell Information Systems, Inc. Charge detectors for CCD registers
DE2634089C3 (de) * 1975-08-11 1988-09-08 Nippon Telegraph And Telephone Corp., Tokio/Tokyo Schaltungsanordnung zum Erfassen schwacher Signale
US4096402A (en) * 1975-12-29 1978-06-20 Mostek Corporation MOSFET buffer for TTL logic input and method of operation
GB1521955A (en) * 1976-03-16 1978-08-23 Tokyo Shibaura Electric Co Semiconductor memory device
US4038567A (en) * 1976-03-22 1977-07-26 International Business Machines Corporation Memory input signal buffer circuit
DE2630797C2 (de) * 1976-07-08 1978-08-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Funktionsgenerator zur Erzeugung einer Spannung an einem Knoten, an den den Bitleitungen eines MOS-Speichers zugeordnete Flip-Flops aus MOS-Transistoren angeschlossen sind
DE2919166C2 (de) * 1978-05-12 1986-01-02 Nippon Electric Co., Ltd., Tokio/Tokyo Speichervorrichtung
US4208730A (en) * 1978-08-07 1980-06-17 Rca Corporation Precharge circuit for memory array
DE2842547A1 (de) * 1978-09-29 1980-04-10 Siemens Ag Schaltungsanordnung zum lesen und regenerieren von in ein-transistor-speicherelementen gespeicherten informationen
JPS61244701A (ja) * 1985-04-09 1986-10-31 財団法人　雑賀技術研究所 粉粒物の計量包装装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678473A (en) * 1970-06-04 1972-07-18 Shell Oil Co Read-write circuit for capacitive memory arrays

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3588846A (en) * 1968-12-05 1971-06-28 Ibm Storage cell with variable power level
US3514765A (en) * 1969-05-23 1970-05-26 Shell Oil Co Sense amplifier comprising cross coupled mosfet's operating in a race mode for single device per bit mosfet memories
US3609710A (en) * 1969-05-29 1971-09-28 Bell Telephone Labor Inc Associative memory cell with interrogation on normal digit circuits
US3685027A (en) * 1970-08-19 1972-08-15 Cogar Corp Dynamic mos memory array chip
BE789500A (fr) * 1971-09-30 1973-03-29 Siemens Ag Memoire a semiconducteurs avec elements de memorisation a un seul transistor
DE2165729C3 (de) * 1971-12-30 1975-02-13 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische, als Lese/Schreiboder als Festwertspeicher betreibbare Speicheranordnung
US3771148A (en) * 1972-03-31 1973-11-06 Ncr Nonvolatile capacitive memory cell

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678473A (en) * 1970-06-04 1972-07-18 Shell Oil Co Read-write circuit for capacitive memory arrays

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5717314B2 (ja) * 1973-04-18 1982-04-09
JPS49131744A (ja) * 1973-04-18 1974-12-17
JPS5518989B2 (ja) * 1973-06-29 1980-05-22
JPS5024039A (ja) * 1973-06-29 1975-03-14
JPS51122343A (en) * 1975-04-21 1976-10-26 Intel Corp High density mos memory array
JPS5249981A (en) * 1975-10-17 1977-04-21 Snam Progetti Multiistage expansion desalination
JPS55146695A (en) * 1975-12-29 1980-11-15 Mostek Corp Method and device for reading and refreshing optimum logic level of dynamic random access memory
JPS5627956B2 (ja) * 1976-03-10 1981-06-27
JPS52108743A (en) * 1976-03-10 1977-09-12 Toshiba Corp Dynamic memory device
JPS5364434A (en) * 1976-11-19 1978-06-08 Mitsubishi Electric Corp Sense circuit of mos semiconductor memory
JPS5747511B2 (ja) * 1976-11-19 1982-10-09
JPS5373039A (en) * 1976-12-13 1978-06-29 Nippon Telegr & Teleph Corp <Ntt> Sense amplifier
JPS5713951B2 (ja) * 1976-12-13 1982-03-20

Also Published As

Publication number Publication date
DE2309192A1 (de) 1974-09-05
CH572262A5 (ja) 1976-01-30
FR2219492A1 (ja) 1974-09-20
ATA49074A (de) 1977-03-15
GB1463382A (en) 1977-02-02
AT339955B (de) 1977-11-25
SE395980B (sv) 1977-08-29
FR2219492B1 (ja) 1980-05-30
DE2309192C3 (de) 1975-08-14
IT1008878B (it) 1976-11-30
US3892984A (en) 1975-07-01
US3892984B1 (ja) 1983-07-05
DE2309192B2 (de) 1975-01-09
LU69443A1 (ja) 1974-05-29
CA1019834A (en) 1977-10-25
BE811463A (fr) 1974-06-17
JPS5916350B2 (ja) 1984-04-14
NL7402393A (ja) 1974-08-27

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