SE395980B - Regenereringskrets - Google Patents

Regenereringskrets

Info

Publication number
SE395980B
SE395980B SE7402245A SE7402245A SE395980B SE 395980 B SE395980 B SE 395980B SE 7402245 A SE7402245 A SE 7402245A SE 7402245 A SE7402245 A SE 7402245A SE 395980 B SE395980 B SE 395980B
Authority
SE
Sweden
Prior art keywords
regeneration circuit
regeneration
circuit
Prior art date
Application number
SE7402245A
Other languages
English (en)
Inventor
K-U Stein
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE395980B publication Critical patent/SE395980B/sv

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406Management or control of the refreshing or charge-regeneration cycles
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4091Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)
  • Read Only Memory (AREA)
SE7402245A 1973-02-23 1974-02-20 Regenereringskrets SE395980B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2309192A DE2309192C3 (de) 1973-02-23 1973-02-23 Regenerierschaltung nach Art eines getasteten Flipflops und Verfahren zum Betrieb einer solchen Regenerierschaltung

Publications (1)

Publication Number Publication Date
SE395980B true SE395980B (sv) 1977-08-29

Family

ID=5872937

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7402245A SE395980B (sv) 1973-02-23 1974-02-20 Regenereringskrets

Country Status (13)

Country Link
US (1) US3892984A (sv)
JP (1) JPS5916350B2 (sv)
AT (1) AT339955B (sv)
BE (1) BE811463A (sv)
CA (1) CA1019834A (sv)
CH (1) CH572262A5 (sv)
DE (1) DE2309192C3 (sv)
FR (1) FR2219492B1 (sv)
GB (1) GB1463382A (sv)
IT (1) IT1008878B (sv)
LU (1) LU69443A1 (sv)
NL (1) NL7402393A (sv)
SE (1) SE395980B (sv)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879621A (en) * 1973-04-18 1975-04-22 Ibm Sense amplifier
US3806898A (en) * 1973-06-29 1974-04-23 Ibm Regeneration of dynamic monolithic memories
US3979603A (en) * 1974-08-22 1976-09-07 Texas Instruments Incorporated Regenerative charge detector for charged coupled devices
US4060737A (en) * 1974-08-22 1977-11-29 Texas Instruments Incorporated Charge coupled device shift registers having an improved regenerative charge detector
DE2443529B2 (de) * 1974-09-11 1977-09-01 Siemens AG, 1000 Berlin und 8000 München Verfahren und anordnung zum einschreiben von binaersignalen in ausgewaehlte speicherelemente eines mos-speichers
US4004284A (en) * 1975-03-05 1977-01-18 Teletype Corporation Binary voltage-differential sensing circuits, and sense/refresh amplifier circuits for random-access memories
US3976895A (en) * 1975-03-18 1976-08-24 Bell Telephone Laboratories, Incorporated Low power detector circuit
US4007381A (en) * 1975-04-18 1977-02-08 Bell Telephone Laboratories, Incorporated Balanced regenerative charge detection circuit for semiconductor charge transfer devices
JPS51122343A (en) * 1975-04-21 1976-10-26 Intel Corp High density mos memory array
US3983413A (en) * 1975-05-02 1976-09-28 Fairchild Camera And Instrument Corporation Balanced differential capacitively decoupled charge sensor
US3982140A (en) * 1975-05-09 1976-09-21 Ncr Corporation High speed bistable multivibrator circuit
US3992637A (en) * 1975-05-21 1976-11-16 Ibm Corporation Unclocked sense ampllifier
US4000413A (en) * 1975-05-27 1976-12-28 Intel Corporation Mos-ram
US3993917A (en) * 1975-05-29 1976-11-23 International Business Machines Corporation Parameter independent FET sense amplifier
US4025908A (en) * 1975-06-24 1977-05-24 International Business Machines Corporation Dynamic array with clamped bootstrap static input/output circuitry
US4021682A (en) * 1975-06-30 1977-05-03 Honeywell Information Systems, Inc. Charge detectors for CCD registers
DE2634089C3 (de) * 1975-08-11 1988-09-08 Nippon Telegraph And Telephone Corp., Tokio/Tokyo Schaltungsanordnung zum Erfassen schwacher Signale
IT1044685B (it) * 1975-10-17 1980-04-21 Snam Progetti Processo di dissalazione ad espansioni multiple di tipo flessibile
US4061999A (en) * 1975-12-29 1977-12-06 Mostek Corporation Dynamic random access memory system
US4096402A (en) * 1975-12-29 1978-06-20 Mostek Corporation MOSFET buffer for TTL logic input and method of operation
JPS52108743A (en) * 1976-03-10 1977-09-12 Toshiba Corp Dynamic memory device
GB1521955A (en) * 1976-03-16 1978-08-23 Tokyo Shibaura Electric Co Semiconductor memory device
US4038567A (en) * 1976-03-22 1977-07-26 International Business Machines Corporation Memory input signal buffer circuit
DE2630797C2 (de) * 1976-07-08 1978-08-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Funktionsgenerator zur Erzeugung einer Spannung an einem Knoten, an den den Bitleitungen eines MOS-Speichers zugeordnete Flip-Flops aus MOS-Transistoren angeschlossen sind
JPS5364434A (en) * 1976-11-19 1978-06-08 Mitsubishi Electric Corp Sense circuit of mos semiconductor memory
JPS5373039A (en) * 1976-12-13 1978-06-29 Nippon Telegr & Teleph Corp <Ntt> Sense amplifier
DE2919166C2 (de) * 1978-05-12 1986-01-02 Nippon Electric Co., Ltd., Tokio/Tokyo Speichervorrichtung
US4208730A (en) * 1978-08-07 1980-06-17 Rca Corporation Precharge circuit for memory array
DE2842547A1 (de) * 1978-09-29 1980-04-10 Siemens Ag Schaltungsanordnung zum lesen und regenerieren von in ein-transistor-speicherelementen gespeicherten informationen
JPS61244701A (ja) * 1985-04-09 1986-10-31 財団法人 雑賀技術研究所 粉粒物の計量包装装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3588846A (en) * 1968-12-05 1971-06-28 Ibm Storage cell with variable power level
US3514765A (en) * 1969-05-23 1970-05-26 Shell Oil Co Sense amplifier comprising cross coupled mosfet's operating in a race mode for single device per bit mosfet memories
US3609710A (en) * 1969-05-29 1971-09-28 Bell Telephone Labor Inc Associative memory cell with interrogation on normal digit circuits
US3678473A (en) * 1970-06-04 1972-07-18 Shell Oil Co Read-write circuit for capacitive memory arrays
US3685027A (en) * 1970-08-19 1972-08-15 Cogar Corp Dynamic mos memory array chip
BE789500A (fr) * 1971-09-30 1973-03-29 Siemens Ag Memoire a semiconducteurs avec elements de memorisation a un seul transistor
DE2165729C3 (de) * 1971-12-30 1975-02-13 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische, als Lese/Schreiboder als Festwertspeicher betreibbare Speicheranordnung
US3771148A (en) * 1972-03-31 1973-11-06 Ncr Nonvolatile capacitive memory cell

Also Published As

Publication number Publication date
FR2219492A1 (sv) 1974-09-20
JPS49115623A (sv) 1974-11-05
LU69443A1 (sv) 1974-05-29
GB1463382A (en) 1977-02-02
NL7402393A (sv) 1974-08-27
IT1008878B (it) 1976-11-30
JPS5916350B2 (ja) 1984-04-14
US3892984B1 (sv) 1983-07-05
ATA49074A (de) 1977-03-15
DE2309192B2 (de) 1975-01-09
CA1019834A (en) 1977-10-25
CH572262A5 (sv) 1976-01-30
FR2219492B1 (sv) 1980-05-30
US3892984A (en) 1975-07-01
DE2309192A1 (de) 1974-09-05
AT339955B (de) 1977-11-25
BE811463A (fr) 1974-06-17
DE2309192C3 (de) 1975-08-14

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