JPS4831200A - - Google Patents

Info

Publication number
JPS4831200A
JPS4831200A JP47081520A JP8152072A JPS4831200A JP S4831200 A JPS4831200 A JP S4831200A JP 47081520 A JP47081520 A JP 47081520A JP 8152072 A JP8152072 A JP 8152072A JP S4831200 A JPS4831200 A JP S4831200A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47081520A
Other languages
Japanese (ja)
Other versions
JPS5246198B2 (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4831200A publication Critical patent/JPS4831200A/ja
Publication of JPS5246198B2 publication Critical patent/JPS5246198B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
    • H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Soft Magnetic Materials (AREA)
JP47081520A 1971-08-18 1972-08-16 Expired JPS5246198B2 (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17275171A 1971-08-18 1971-08-18

Publications (2)

Publication Number Publication Date
JPS4831200A true JPS4831200A (en:Method) 1973-04-24
JPS5246198B2 JPS5246198B2 (en:Method) 1977-11-22

Family

ID=22629067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47081520A Expired JPS5246198B2 (en:Method) 1971-08-18 1972-08-16

Country Status (10)

Country Link
US (1) US3723599A (en:Method)
JP (1) JPS5246198B2 (en:Method)
BE (1) BE787642A (en:Method)
CA (1) CA954776A (en:Method)
DE (1) DE2240044C3 (en:Method)
FR (1) FR2149518B1 (en:Method)
GB (1) GB1394290A (en:Method)
IT (1) IT964946B (en:Method)
NL (1) NL146403B (en:Method)
SE (1) SE385437B (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49117400A (en:Method) * 1973-03-14 1974-11-09

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS529438B2 (en:Method) * 1973-01-16 1977-03-16
US4187139A (en) * 1973-02-14 1980-02-05 U.S. Philips Corporation Growth of single crystal bismuth silicon oxide
US4040890A (en) * 1975-06-27 1977-08-09 Bell Telephone Laboratories, Incorporated Neodymium oxide doped yttrium aluminum garnet optical fiber
NL7606482A (nl) * 1976-06-16 1977-12-20 Philips Nv Eenkristzl van calcium-gallium-germanium granaat, alsmede substraat vervaardigd van een dergelijk eenkristzl met een epitaxiaal opgegroeide beldo- meinfilm.
US4199396A (en) * 1976-06-24 1980-04-22 Union Carbide Corporation Method for producing single crystal gadolinium gallium garnet
US4302280A (en) * 1978-11-14 1981-11-24 Texas Instruments Incorporated Growing gadolinium gallium garnet with calcium ions
US4315832A (en) * 1979-03-05 1982-02-16 Hughes Aircraft Company Process for increasing laser crystal fluorescence yield by controlled atmosphere processing
GB2047113B (en) * 1979-04-12 1983-08-03 Union Carbide Corp Method for producing gadolinium gallium garnet
FR2469478A1 (fr) * 1979-11-09 1981-05-22 Rhone Poulenc Ind Procede de fabrication de grenat polycristallin comportant l'aluminium et/ou le gallium et/ou l'indium et au moins un element pris dans le groupe constitue par les terres rares et l'yttrium, monocristaux correspondants
FR2469477A1 (fr) * 1979-11-09 1981-05-22 Rhone Poulenc Ind Procede de fabrication de grenat polycristallin, grenat polycristallin et monocristal correspondant
JPS5988398A (ja) * 1982-11-08 1984-05-22 Shin Etsu Chem Co Ltd ガリウムガ−ネツト単結晶の製造方法
US5691279A (en) * 1993-06-22 1997-11-25 The United States Of America As Represented By The Secretary Of The Army C-axis oriented high temperature superconductors deposited onto new compositions of garnet
WO2004073024A2 (en) * 2003-02-06 2004-08-26 Brown University Method and apparatus for making continuous films ofa single crystal material

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3272591A (en) * 1959-05-08 1966-09-13 Union Carbide Corp Production of single crystals from incongruently melting material
US3079240A (en) * 1960-05-13 1963-02-26 Bell Telephone Labor Inc Process of growing single crystals

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49117400A (en:Method) * 1973-03-14 1974-11-09

Also Published As

Publication number Publication date
NL7208408A (en:Method) 1973-02-20
FR2149518B1 (en:Method) 1975-09-12
NL146403B (nl) 1975-07-15
FR2149518A1 (en:Method) 1973-03-30
DE2240044B2 (en:Method) 1974-05-09
DE2240044A1 (de) 1973-03-01
BE787642A (fr) 1972-12-18
GB1394290A (en) 1975-05-14
DE2240044C3 (de) 1975-01-02
SE385437B (sv) 1976-07-05
CA954776A (en) 1974-09-17
IT964946B (it) 1974-01-31
JPS5246198B2 (en:Method) 1977-11-22
US3723599A (en) 1973-03-27

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