JPS4736785A - - Google Patents

Info

Publication number
JPS4736785A
JPS4736785A JP2662672A JP2662672A JPS4736785A JP S4736785 A JPS4736785 A JP S4736785A JP 2662672 A JP2662672 A JP 2662672A JP 2662672 A JP2662672 A JP 2662672A JP S4736785 A JPS4736785 A JP S4736785A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2662672A
Other languages
Japanese (ja)
Other versions
JPS5550390B1 (cg-RX-API-DMAC10.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7103772A external-priority patent/NL7103772A/xx
Priority claimed from NL7108373A external-priority patent/NL7108373A/xx
Application filed filed Critical
Publication of JPS4736785A publication Critical patent/JPS4736785A/ja
Publication of JPS5550390B1 publication Critical patent/JPS5550390B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/02—Manually-operated control
    • H03G3/04—Manually-operated control in untuned amplifiers
    • H03G3/10—Manually-operated control in untuned amplifiers having semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/14—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/80—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
    • H04B10/806—Arrangements for feeding power
    • H04B10/807—Optical power feeding, i.e. transmitting power using an optical signal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/311—Design considerations for internal polarisation in bipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R25/00—Electric hearing aids

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Signal Processing (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Amplifiers (AREA)
  • Shift Register Type Memory (AREA)
  • Logic Circuits (AREA)
  • Circuit Arrangements For Discharge Lamps (AREA)
JP2662672A 1971-03-20 1972-03-17 Pending JPS5550390B1 (cg-RX-API-DMAC10.html)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7103772A NL7103772A (cg-RX-API-DMAC10.html) 1971-03-20 1971-03-20
NL7108373A NL7108373A (cg-RX-API-DMAC10.html) 1971-06-18 1971-06-18

Publications (2)

Publication Number Publication Date
JPS4736785A true JPS4736785A (cg-RX-API-DMAC10.html) 1972-11-29
JPS5550390B1 JPS5550390B1 (cg-RX-API-DMAC10.html) 1980-12-17

Family

ID=26644637

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2662672A Pending JPS5550390B1 (cg-RX-API-DMAC10.html) 1971-03-20 1972-03-17
JP6906880A Granted JPS55160466A (en) 1971-03-20 1980-05-26 Semiconductor device
JP6906780A Granted JPS55160465A (en) 1971-03-20 1980-05-26 Semiconductor device

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP6906880A Granted JPS55160466A (en) 1971-03-20 1980-05-26 Semiconductor device
JP6906780A Granted JPS55160465A (en) 1971-03-20 1980-05-26 Semiconductor device

Country Status (13)

Country Link
JP (3) JPS5550390B1 (cg-RX-API-DMAC10.html)
AR (1) AR196071A1 (cg-RX-API-DMAC10.html)
AT (1) AT326193B (cg-RX-API-DMAC10.html)
AU (1) AU467899B2 (cg-RX-API-DMAC10.html)
BE (1) BE780961A (cg-RX-API-DMAC10.html)
BR (1) BR7201587D0 (cg-RX-API-DMAC10.html)
CA (3) CA964335A (cg-RX-API-DMAC10.html)
CH (1) CH550487A (cg-RX-API-DMAC10.html)
DE (1) DE2211384A1 (cg-RX-API-DMAC10.html)
FR (1) FR2130399B1 (cg-RX-API-DMAC10.html)
GB (1) GB1395032A (cg-RX-API-DMAC10.html)
IT (1) IT953971B (cg-RX-API-DMAC10.html)
SE (1) SE377735B (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52105786A (en) * 1976-03-01 1977-09-05 Mitsubishi Electric Corp Semiconductor device
JPS5368990A (en) * 1976-12-01 1978-06-19 Fujitsu Ltd Production of semiconductor integrated circuit

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
US4007474A (en) * 1972-12-29 1977-02-08 Sony Corporation Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
JPS5147583B2 (cg-RX-API-DMAC10.html) * 1972-12-29 1976-12-15
US4027324A (en) * 1972-12-29 1977-05-31 Sony Corporation Bidirectional transistor
JPS5754969B2 (cg-RX-API-DMAC10.html) * 1974-04-04 1982-11-20
JPS57658B2 (cg-RX-API-DMAC10.html) * 1974-04-16 1982-01-07
JPS50137478A (cg-RX-API-DMAC10.html) * 1974-04-18 1975-10-31
JPS5714064B2 (cg-RX-API-DMAC10.html) * 1974-04-25 1982-03-20
JPS5648983B2 (cg-RX-API-DMAC10.html) * 1974-05-10 1981-11-19
JPS5718710B2 (cg-RX-API-DMAC10.html) * 1974-05-10 1982-04-17
DE2641915A1 (de) * 1976-09-17 1978-03-23 Siemens Ag Monolithisch integrierte schaltung zur erzeugung von impulsen langer dauer
DE2641912C3 (de) * 1976-09-17 1980-05-29 Siemens Ag, 1000 Berlin Und 8000 Muenchen Schaltungsanordnung zur Übertragung elektrischer Versorgungsleistungen
JPS56150871A (en) * 1980-04-24 1981-11-21 Toshiba Corp Semiconductor device
GB2151843A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
JPS61154063A (ja) * 1984-12-26 1986-07-12 Toshiba Corp 光半導体装置およびその製造方法
FR2619959B1 (fr) * 1987-08-31 1991-06-14 Thomson Semiconducteurs Circuit de detection de lumiere
JP2800827B2 (ja) * 1988-02-12 1998-09-21 浜松ホトニクス株式会社 光半導体装置およびその製造方法
GB2220316B (en) * 1988-05-05 1992-01-29 Plessey Co Plc Improvements in and relating to oscillators
DE102010039258B4 (de) * 2010-08-12 2018-03-15 Infineon Technologies Austria Ag Transistorbauelement mit reduziertem Kurzschlussstrom

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2944165A (en) * 1956-11-15 1960-07-05 Otmar M Stuetzer Semionductive device powered by light
NL281945A (cg-RX-API-DMAC10.html) * 1960-10-14 1900-01-01
FR1377412A (fr) * 1962-10-08 1964-11-06 Fairchild Camera Instr Co Transistor épitaxique inverse
GB1050478A (cg-RX-API-DMAC10.html) * 1962-10-08

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52105786A (en) * 1976-03-01 1977-09-05 Mitsubishi Electric Corp Semiconductor device
JPS5368990A (en) * 1976-12-01 1978-06-19 Fujitsu Ltd Production of semiconductor integrated circuit

Also Published As

Publication number Publication date
BR7201587D0 (pt) 1974-10-22
DE2211384A1 (de) 1972-11-30
AU467899B2 (en) 1975-12-18
IT953971B (it) 1973-08-10
FR2130399B1 (cg-RX-API-DMAC10.html) 1977-09-02
CA970068A (en) 1975-06-24
AR196071A1 (es) 1973-11-30
JPS5622144B2 (cg-RX-API-DMAC10.html) 1981-05-23
DE2211384C2 (cg-RX-API-DMAC10.html) 1989-06-15
JPS5550390B1 (cg-RX-API-DMAC10.html) 1980-12-17
JPS55160466A (en) 1980-12-13
ATA236072A (de) 1975-02-15
GB1395032A (en) 1975-05-21
SE377735B (cg-RX-API-DMAC10.html) 1975-07-21
AT326193B (de) 1975-11-25
BE780961A (fr) 1972-09-20
CH550487A (de) 1974-06-14
AU3997072A (en) 1973-09-20
JPS5622145B2 (cg-RX-API-DMAC10.html) 1981-05-23
CA964335A (en) 1975-03-11
FR2130399A1 (cg-RX-API-DMAC10.html) 1972-11-03
JPS55160465A (en) 1980-12-13
CA973955A (en) 1975-09-02

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