JPS324768B1 - - Google Patents

Info

Publication number
JPS324768B1
JPS324768B1 JP2566155A JP2566155A JPS324768B1 JP S324768 B1 JPS324768 B1 JP S324768B1 JP 2566155 A JP2566155 A JP 2566155A JP 2566155 A JP2566155 A JP 2566155A JP S324768 B1 JPS324768 B1 JP S324768B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2566155A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US472354A external-priority patent/US2876202A/en
Application filed filed Critical
Publication of JPS324768B1 publication Critical patent/JPS324768B1/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/087—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and being incorporated in an organic bonding material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/864—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/80—Electrical treatments, e.g. for electroforming

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP2566155A 1954-09-27 1955-09-27 Pending JPS324768B1 (en:Method)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US541623XA 1954-09-27 1954-09-27
US472354A US2876202A (en) 1954-12-01 1954-12-01 Photoconducting powders and method of preparation

Publications (1)

Publication Number Publication Date
JPS324768B1 true JPS324768B1 (en:Method) 1957-07-10

Family

ID=45868996

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2566155A Pending JPS324768B1 (en:Method) 1954-09-27 1955-09-27

Country Status (4)

Country Link
JP (1) JPS324768B1 (en:Method)
BE (1) BE541623A (en:Method)
DE (1) DE1043536B (en:Method)
GB (1) GB815365A (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4759951A (en) * 1985-09-25 1988-07-26 Sharp Kabushiki Kaisha Heat-treating Cd-containing photoelectric conversion film in the presence of a cadmium halide

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE874181C (de) * 1940-04-27 1953-04-20 Patra Patent Treuhand Verfahren zur Herstellung einer photoelektrisch wirksamen Verbindung
DE861450C (de) * 1940-05-17 1953-01-05 Patra Patent Treuhand Photoelektrische Widerstandszelle
DE861295C (de) * 1940-06-08 1952-12-29 Patra Patent Treuhand Verfahren zur Anbringung von photoelektrischen, kleinkristallinen Stoffen zur Herstellung photoelektrisch empfindlicher Widerstaende
DE903971C (de) * 1941-01-15 1954-02-11 Telefunken Gmbh Photowiderstaende, beispielsweise zur Fernbilduebertragung mittels Sekundaeremission von Photowiderstaenden und Verfahren zu deren Herstellung
DE870300C (de) * 1942-10-11 1953-03-12 Patra Patent Treuhand Verfahren zur Herstellung hochempfindlicher Photowiderstaende

Also Published As

Publication number Publication date
DE1043536B (de) 1958-11-13
GB815365A (en) 1959-06-24
BE541623A (fr) 1959-08-28

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