JPH1197584A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To ensure the excellent state of ground of a semiconductor element in a semiconductor device on which a semiconductor element having a ground electrode on the back is flip-chip-mounted. SOLUTION: In a semiconductor device, a semiconductor element 2 where a ground electrode 3 is formed on the upper surface is mounted on a semiconductor element mounting portion of the upper surface of an insulating substrate 1, and wiring electrode pads 5 formed in the semiconductor element mounting portion and wiring electrodes 4 formed on the lower surface of the semiconductor element are electrically connected by using conductive interconnection members 8. The ground electrode 3 of the semiconductor element 2 and ground electrode pads 6 formed in the vicinity of the semiconductor element mounting portion are connected by using solder or conductive paste 9, and the semiconductor element 2, the ground electrode pads 6 and the solder or the conductive paste 9 are sealed with sealing resin 10. Hence the excellent state of ground of the semiconductor element 2 can be ensured, and miniaturization of the semiconductor device can be realized.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device for high frequencies such as a microwave band and a millimeter wave band, and more particularly to a semiconductor device in which a semiconductor element is mounted face-down and flip-chip.

[0002]

2. Description of the Related Art As a mode of mounting a semiconductor element in a semiconductor device for a high frequency such as a microwave band or a millimeter wave band,
(1) Carrier mounting: A method in which a semiconductor element is mounted on a carrier substrate and a plurality of carrier substrates are connected to form a single circuit. (2) Package mounting: One semiconductor element is mounted in a semiconductor element storage package. (3) Multi-chip module: There are three methods: a method of mounting a plurality of semiconductor elements on one carrier substrate or a package for housing semiconductor elements. In these three mounting methods, the wiring electrodes of the semiconductor element were formed because the wiring electrodes of the semiconductor element and the external electric circuit used the wire bonding method in the carrier substrate or the package / multi-chip module. It is common to fix it on a substrate or the like with its surface facing up.

That is, a semiconductor element such as a semiconductor integrated circuit element having a double-sided electrode structure in which a wiring electrode is formed on one surface (front surface) and a ground electrode is also formed on the other surface (back surface) is used. When the semiconductor device is mounted on the semiconductor device, the semiconductor device is fixed to the semiconductor device mounting portion of the insulating substrate on which the ground plane is formed with the back surface side down, so-called face-up, and the upper surface (front surface) of the semiconductor device is mounted. ) Side and the wiring electrode pad formed around the semiconductor element mounting portion of the insulating substrate are electrically connected by a bonding wire, and then, if necessary, a sealing resin is applied to the semiconductor element and the bonding wire. Is applied so as to cover the semiconductor device, or the semiconductor device is sealed by using a lid.

However, in such a semiconductor device, it is necessary to form a large number of wiring electrode pads around the semiconductor element mounting portion. Connection with the semiconductor device, and it is difficult to sufficiently meet the demand for miniaturization of the semiconductor device. Further, for semiconductor devices for high frequencies such as the GHz band, since a bonding wire is used for electrical connection between the wiring electrode and the wiring electrode pad, the connection length becomes long, and the high frequency characteristics deteriorate due to the influence. There was also a problem that it would.

[0005] For this reason, recently, as a mounting method capable of responding to demands for higher density of semiconductor elements and miniaturization of semiconductor devices, it is possible to obtain good high frequency characteristics by shortening the connection length of electrical connection. A so-called face-down type flip chip mounting, in which a semiconductor element having a single-sided electrode structure in which a wiring electrode is formed only on one side (front side) and mounted with the surface down, has begun to be put into practical use.

In a semiconductor device in which such a semiconductor element is flip-chip mounted, the semiconductor element is mounted face down in a bare chip state with the surface side down on the semiconductor element mounting portion on the upper surface of the insulating substrate where the wiring electrode pads are formed. Then, the semiconductor device is mounted on the insulating substrate by electrically connecting the wiring electrode pad of the insulating substrate and the wiring electrode of the semiconductor device by a metal bump such as solder or gold formed on at least one of them. After that, sealing is performed by applying a sealing resin to four sides of the semiconductor element, or by applying a sealing resin so as to cover the upper surface (back surface) of the semiconductor element as in the case of the wire bonding method. The semiconductor device is configured by performing the above.

[0007]

However, in the above-mentioned conventional flip-chip-mounted semiconductor device, only a single-sided electrode structure can be used as a semiconductor element, and both sides of the semiconductor device have a ground electrode formed on the back surface. Even when a semiconductor element having an electrode structure is used, it is difficult to ground the back surface on which the ground electrode is formed, that is, the upper surface when mounted on an insulating substrate.

On the other hand, a method of forming a ground electrode pad near the semiconductor element on the upper surface of the insulating substrate, and electrically connecting the ground electrode on the upper surface of the semiconductor element to the ground electrode pad with a bonding wire to establish grounding. Is also conceivable.

However, in this case, since the bonding wire as the grounding means is thin, a good grounding state cannot be secured, and there is a problem that the operation of the semiconductor element becomes unstable. In addition, a high-frequency semiconductor element such as a GHz band has a problem in that high-frequency characteristics are deteriorated due to a long connection length for grounding.

In addition, since sealing is performed by applying a sealing resin so as to cover the semiconductor element and the bonding wire, viscosity control of the sealing resin is also very important. There is a problem that it is knocked down and the wire is broken. On the other hand, if the viscosity is too low, the sealing resin spreads, and the sealing area becomes large, so that the highest portion of the wire may be exposed without being sealed.

Another problem is that the height of the semiconductor device is increased because the sealing resin is applied so as to cover the bonding wires, and it is difficult to reduce the size of the semiconductor device, especially to reduce the height. there were.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to flip-chip mount a semiconductor device having a ground electrode on the back surface face-down and seal it with a sealing material. For a semiconductor device, by securing a good grounding state while sealing the semiconductor element, it is possible to secure a stable operation of the semiconductor element and exhibit desired high-frequency characteristics, and to hermetically seal the semiconductor element. It is an object of the present invention to provide a semiconductor device which has high reliability and can cope with miniaturization.

[0013]

A semiconductor device according to the present invention comprises a semiconductor element mounting portion formed on an upper surface of an insulating substrate.
A semiconductor element having a ground electrode formed on the upper surface is mounted, and a wiring electrode pad formed in the semiconductor element mounting portion and a wiring electrode formed on the lower surface of the semiconductor element are electrically connected by a conductive interconnect member. Made by connecting
A ground electrode of the semiconductor element and a ground electrode pad formed near the semiconductor element mounting portion are connected by solder or conductive paste; and the semiconductor element, the ground electrode pad, and the solder or conductive paste are connected to each other. Are sealed with a sealing resin.

According to the semiconductor device of the present invention, the semiconductor element having the wiring electrode formed on the front side and the ground electrode formed on the back side is flipped face-down on the semiconductor element mounting portion on the insulating substrate with the front side as the lower side. Solder or conductive material that is mounted on a chip, and the ground electrode on the back surface of the semiconductor element, that is, the mounted upper surface, and the ground electrode pad formed near the semiconductor element mounting portion on the insulating substrate are provided so as to cover them together. The semiconductor element, the ground electrode pad formed near the semiconductor element mounting portion, and the solder or conductive paste are electrically connected by a paste, and the entire surface thereof is sealed with a sealing resin to be sealed. Therefore, the conduction between the ground electrode of the semiconductor element and the ground electrode pad of the insulating substrate is achieved by the conductive member solder or conductive paste. It is possible to take in the stomach area to ensure good grounding condition, it is possible to hermetically seal the high reliability by the sealing resin. As a result, the semiconductor device having a double-sided electrode structure with a ground electrode formed on the back surface can be flip-chip mounted face down while maintaining good grounding, and a good high frequency while ensuring stable operation of the semiconductor device. A semiconductor device that can exhibit characteristics and that can be reduced in size, particularly, can be reduced in height.

Further, according to the semiconductor device of the present invention, by using a solder or a conductive paste as a conductive member for electrically connecting the ground electrode on the upper surface of the semiconductor element to the ground electrode pad on the insulating substrate. A good grounding state can be ensured with a wide grounding area and a low electric resistance with respect to the grounding electrode of the semiconductor element, and the connection length for grounding is lengthened by a thin conductor like a connection by a bonding wire. Therefore, desired high-frequency characteristics can be exhibited without deteriorating high-frequency characteristics even for a high-frequency semiconductor element such as a GHz band. Moreover, by sealing the entire semiconductor element, ground electrode pad, solder or conductive paste with the sealing resin from above using the sealing resin, a highly reliable and highly airtight semiconductor device can be obtained. Become.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view illustrating an example of an embodiment of a semiconductor device of the present invention, which is an example of a carrier mounting method or a multi-chip module as a mounting method. In FIG. 1, reference numeral 1 denotes an insulating substrate, which is made of an insulating material such as a ceramic substrate, a multilayer ceramic substrate, a glass substrate, and a resin substrate. Reference numeral 2 denotes a semiconductor element such as a semiconductor integrated circuit element having a double-sided electrode structure mounted on the semiconductor element mounting portion of the insulating substrate 1. The semiconductor element mounting portion of the insulating substrate 1 is set in a recess formed on the insulating substrate 1 in addition to the case where the semiconductor element mounting portion is set as a flat surface on a part of the insulating substrate 1 as in this example. In some cases.

Reference numeral 3 denotes a ground electrode formed on almost the entire upper surface (back surface) of the semiconductor element 2, and reference numeral 4 denotes a wiring electrode formed on the lower surface (front surface) of the semiconductor element. Of these, ground electrode 3
May be formed on a part of the upper surface of the semiconductor element 2 by one or more.

On the other hand, 5 is a wiring electrode pad formed in the semiconductor element mounting portion on the upper surface of the insulating substrate 1 so as to correspond to the wiring electrode 4 of the semiconductor element 2, and 6 is near the semiconductor element mounting portion on the upper surface of the insulating substrate 1. Is a ground electrode pad formed on the substrate.

In this example, an insulating layer 7 is formed so as to cover a wiring conductor (not shown) formed on the insulating substrate 1, and a window is opened in the insulating layer 7 so that a part of the wiring conductor is formed. Although the wiring electrode pad 5 and the ground electrode pad 6 are formed by exposing the insulating layer, if the insulation between the pads can be ensured, the insulating layer 7 is not necessarily provided.

Reference numeral 8 denotes a conductive interconnection member, which is formed by a metal bump such as solder, gold, or copper, a conductive paste such as a silver paste, a solder paste, or an anisotropic conductive paste, or an anisotropic conductive sheet. The wiring electrode pad 5 of the insulating substrate 1 is electrically connected to the wiring electrode 4 of the semiconductor element 2. In addition, in such flip chip mounting, it can be used as a mechanical connection means for mounting the semiconductor element 2 on the semiconductor element mounting portion of the insulating substrate 1.

Reference numeral 9 denotes a solder or a conductive paste which covers both the ground electrode 3 on the upper surface (back surface) of the semiconductor element 2 mounted on the insulating substrate 1 and the ground electrode pad 6 on the insulating substrate 1. The grounding electrode 3 on the upper surface of the semiconductor element 2 and the grounding electrode pad 6 on the upper surface of the insulating substrate 1 are electrically connected as a conductive member applied to the semiconductor element 2 so that the semiconductor element 2 is properly grounded. It is for doing. Such a solder or conductive paste 9 includes a ground electrode 3 of the semiconductor element 2 and a ground electrode pad 6 of the insulating substrate 1.
As a conductive material for ensuring good ground conduction, a material having a low resistance and a heat resistant temperature that can withstand the operating environment of the semiconductor device is used.

For example, as a solder, ie, a low melting point brazing alloy, tin / lead / tin / lead / silver / tin / bismuth / tin / lead / bismuth / tin / indium / indium / lead / tin / lead / indium. Lead / Indium / Silver / Lead / Silver, etc. The conductive paste is a general conductive paste such as silver paste, or a conductive resin such as epoxy resin or polyimide resin mixed with metal powder such as silver. Is used.

As described above, the solder or conductive paste 9
When the ground electrode 3 and the ground electrode pad 6 are electrically connected by soldering, for example, in the case of solder, a solder ball or a solder paste is applied from the ground electrode 3 of the semiconductor element 2 to the ground electrode pad 6 of the insulating substrate 1. And through the step of heating the entire substrate, it is possible to establish a good electrical connection and secure a good ground conduction. In the case of a conductive paste, silver paste or the like is applied so as to cover both the upper surface of the ground electrode 3 of the semiconductor element 2 and the upper surface of the ground electrode pad 6 of the insulating substrate 1, and the paste is cured by heat treatment. Accordingly, it is also possible to electrically connect well and secure good ground conduction.

According to the semiconductor device of the present invention, the electrical connection between the ground electrode 3 on the upper surface of the semiconductor element 2 and the ground electrode pad 6 on the insulating substrate 1 is established by using the solder or the conductive paste 9 as described above. Since a conductive member provided so as to cover the semiconductor element 2 / the ground electrode 3 and the ground electrode pad 6 is used, a good ground state is secured with a wide ground area and a low electric resistance with respect to the ground electrode 3. The connection length for grounding does not become long, so that high-frequency characteristics can be exhibited without deteriorating high-frequency characteristics even for a high-frequency semiconductor element such as a GHz band. Can be done.

Numeral 10 is for air-tightly sealing the whole surface of the semiconductor element 2 and the ground electrode pad 6 formed near the semiconductor element mounting portion on the upper surface of the insulating substrate 1 and the solder or conductive paste 9 connecting them. Sealing resin. As such a sealing resin 10, a material that has excellent heat resistance, can be hermetically sealed, and has a heat resistant temperature that can withstand the operating environment of the semiconductor device is used as a sealing material for the semiconductor element 2. A conventionally well-known sealing resin material can be used for the sealing resin 10. For example, an epoxy-based resin or a polyimide-based resin is used. To hermetically seal the semiconductor element 2 and the like.

Reference numeral 11 denotes an insulating resin applied so as to fill a gap between the semiconductor element 2 and the upper surface of the insulating substrate 1. The insulating resin 11 is used to prevent a short circuit between the solder or the conductive paste 9 and the conductive interconnecting member 8 or the wiring electrode 4 and the wiring electrode pad 5.
Is applied in order to prevent the solder or conductive paste 9 from entering the lower surface of the solder. However, since the solder or conductive paste 9 has an appropriate viscosity or solidification property, the solder or conductive paste 9 is formed with the ground electrode 3. This is not particularly necessary even when the coating is applied and solidified so as to connect to the ground electrode pad 6 and does not penetrate into the lower surface of the semiconductor element 2 and does not cause a short circuit.

When the solder or the conductive paste 9 is used, such as solder, which needs to be treated at a relatively high temperature in order to give fluidity once and give good conduction after application. Is selected as a solder 9 that can be processed at a temperature that does not adversely affect the characteristics of the semiconductor element 2, and a material that can withstand the temperature is selected as the insulating layer 7, the sealing resin 10, and the insulating resin 11. I do.

Further, in the gap between the lower surface of the semiconductor element 2 and the upper surface of the insulating substrate 1, the semiconductor element 2 is firmly fixed to the semiconductor element mounting portion, or the conductive interconnect member 8 is destroyed by thermal stress or the like. A so-called underfill resin may be provided to prevent the occurrence of heat, or to conduct heat generated by the semiconductor element 2 to the insulating substrate 1 satisfactorily.

According to such a semiconductor device of the present invention,
The ground electrode 3 of the semiconductor element 2 and the ground electrode pad 6 of the insulating substrate 1 are electrically connected by solder or conductive paste 9 and sufficient ground conduction can be ensured to secure a good ground state. Furthermore, since the sealing resin 10 is applied to the entire surface of the semiconductor element 2 and the ground electrode pad 6 formed near the semiconductor element mounting portion on the upper surface of the insulating substrate 1, the sealing electrode 10 is hermetically sealed. The semiconductor element 2 having the double-sided electrode structure formed can be flip-chip mounted face down while maintaining good grounding, and the semiconductor element 2 can operate stably and can be miniaturized. Semiconductor device.

Further, a good grounding state can be ensured with respect to the ground electrode 3 of the semiconductor element 2 by the solder or the conductive paste 9, and the high-frequency characteristic can be applied to the high-frequency semiconductor element 2 such as a GHz band. , And desired high-frequency characteristics can be exhibited.

Next, another example of the embodiment of the semiconductor device of the present invention is shown in FIG. 2 in a sectional view similar to FIG. 2, reference numeral 21 denotes an insulating substrate, 22 denotes a semiconductor element having a double-sided electrode structure mounted on a semiconductor element mounting portion of the insulating substrate 21, 23 denotes a ground electrode formed on the upper surface (front surface) of the semiconductor element, and 24 denotes a ground electrode. This is a wiring electrode formed on the lower surface (front surface) of the semiconductor element.
Reference numeral 25 denotes a wiring electrode pad formed in the semiconductor element mounting portion on the upper surface of the insulating substrate 21 so as to correspond to the wiring electrode 24 of the semiconductor element 22, and 26 is formed near the semiconductor element mounting portion on the upper surface of the insulating substrate 21. The ground electrode pad 27 covers the wiring conductor (not shown) formed on the insulating substrate 21, and a window is opened in a part thereof to expose a part of the wiring conductor, thereby forming the wiring electrode pad 25 and the ground electrode. An insulating layer forming the pad 26 and a conductive connecting member 28 are provided.

Numeral 29 denotes a dam member formed outside the ground electrode pad 26 near the semiconductor element mounting portion on the upper surface of the insulating substrate 21 so as to surround these areas. Numeral 30 denotes a dam member of the mounted semiconductor element 22. The ground electrode 23 on the upper surface (back surface) is
Solder or conductive paste 31 is provided so as to cover both the upper ground electrode pads 26 and electrically connects the two to ensure good grounding of the semiconductor element 2. This is a sealing resin for covering the entire surface of the ground electrode pad 26 formed in the vicinity of the semiconductor element mounting portion on the upper surface and hermetically sealing the resin. Reference numeral 32 denotes an insulating resin applied so as to fill a gap between the semiconductor element 22 and the upper surface of the insulating substrate 21.

In this example, since the dam member 29 is provided so as to surround the area outside the ground electrode pad 26 on the upper surface of the insulating substrate 21, the dam member 29 allows the solder or the conductive paste 30 and the sealing resin 31 to be formed. It is possible to prevent the outflow to the other area of the upper surface of the insulating substrate 21, and for example, the solder or the conductive paste 30 spreads on the wiring conductor formed in the other area of the upper surface of the insulating substrate 21 to cause a short circuit. Etc. can be prevented.

The dam member 29 is formed by coating the semiconductor element 22 so as to surround the semiconductor element 22 with a suitable space, for example, using a thermosetting resin having a relatively high viscosity. It may be configured by applying a solder or a conductive paste 30 so as to cover, and then applying a sealing resin 31 so as to cover them, and then curing by applying heat. At this time, if heat for curing adversely affects members such as the semiconductor element 22, the light may be irradiated by using a photocurable resin.

Also in this example, the semiconductor element mounting portion may be formed in a recess formed on the upper surface of the insulating substrate 21, and the insulating resin 32 is not always required. An underfill resin may be provided in a gap between the lower surface and the upper surface of the insulating substrate 21.

Next, still another embodiment of the semiconductor device according to the present invention is shown in FIG. 3 in a sectional view similar to FIGS.
In FIG. 3, reference numeral 41 denotes a semiconductor element housing package as an insulating substrate. Reference numeral 42 denotes a semiconductor element having a double-sided electrode structure, which is provided on a semiconductor element mounting portion formed in a concave portion 41a for forming a space for accommodating the semiconductor element 42 formed on the upper surface of the semiconductor element housing package 41. It is installed. Incidentally, such a semiconductor element mounting portion is provided in the concave portion 41.
a may be formed inside a concave portion formed in a step-like shape in a.

Reference numeral 43 denotes a ground electrode formed on the upper surface (back surface) of the semiconductor element 42, and reference numeral 44 denotes a wiring electrode formed on the lower surface (front surface) of the semiconductor element. Reference numeral 45 denotes a wiring electrode pad formed in the semiconductor element mounting portion on the upper surface of the semiconductor element housing package 41 so as to correspond to the wiring electrode 44 of the semiconductor element 42. Reference numeral 46 denotes a semiconductor element mounting on the upper surface of the semiconductor element housing package 41. A ground electrode pad 47 formed in the vicinity of the portion covers a wiring conductor (not shown) formed on the upper surface of the semiconductor element housing package 41, and a window is opened in a part thereof to expose a part of the wiring conductor. By doing so, the insulating layer 48 forming the wiring electrode pad 45 and the ground electrode pad 46 is a conductive interconnection member.

Reference numeral 49 denotes a ground electrode 43 of the mounted semiconductor element 42.
Is applied so as to cover both the ground electrode pad 46 on the upper surface of the semiconductor element housing package 41 and solder or conductive paste 50 for electrically connecting the both to ensure good grounding of the semiconductor element 42. Is a sealing resin for hermetically sealing the whole surface of the semiconductor element 42 and the ground electrode pad 46 formed near the semiconductor element mounting portion on the upper surface of the semiconductor element housing package 41. Reference numeral 51 denotes an insulating resin applied so as to fill a gap between the semiconductor element 42 and the upper surface of the semiconductor element housing package 41.

In this example, a package 41 for accommodating a semiconductor element is used as an insulating substrate, and a concave portion 41a on the upper surface thereof is used.
Electrode pad formed near the semiconductor element mounting part in the
The side wall of the concave portion 41a is formed so as to surround the outer region of 46, and solder or conductive paste 49 and a sealing resin 50 are applied and applied so as not to protrude from the concave portion 41a, and the upper surface of the semiconductor element 42 is formed. The ground electrode 43 and the ground electrode pad 46 are connected, and the semiconductor element 42 and the entire ground electrode pad 46 are sealed. The semiconductor device is obtained by sealing the recess 41a with a lid (not shown) as necessary.

When the semiconductor element 42 is sealed with a lid as in this example, the sealing resin 50 does not need to have high sealing reliability. Conversely, if the sealing resin 50 has high sealing reliability, the sealing with the lid does not cause any problem even if the sealing reliability is low.

Such a semiconductor device storage package 41
As, for example, various packages such as those using a ceramic material or glass ceramic as an insulating substrate, those using an organic insulating resin, those using an inorganic insulating powder and an organic insulating resin are used. be able to.

Also in this example, the insulating resin 51 is not always required, and the underfill resin may be applied to the gap between the lower surface of the semiconductor element 42 and the upper surface of the semiconductor element housing package 41. Good.

It should be noted that the present invention is not limited to the above examples, and various changes and improvements can be made without departing from the scope of the present invention.

[0044]

As described above, according to the semiconductor device of the present invention, the semiconductor element having the wiring electrode formed on the front side and the ground electrode formed on the rear side is provided on the front side of the semiconductor element mounting portion on the insulating substrate. And the ground electrode on the upper surface after mounting the semiconductor element and the ground electrode pad formed near the semiconductor element mounting portion on the insulating substrate are connected by solder or conductive paste. Therefore, a good grounding state of the semiconductor element in a wide grounding area can be ensured by the solder or the conductive paste.

Further, by applying a sealing resin so as to cover the entire surface of the semiconductor element and the ground electrode pad formed near the semiconductor element mounting portion on the upper surface of the insulating substrate from above, the high reliability of the semiconductor element is achieved. Can be hermetically sealed.

Further, according to the semiconductor device of the present invention, a good grounding state can be ensured with respect to the ground electrode of the semiconductor element by the solder or the conductive paste, and the ground is formed by a thin conductor like a connection by a bonding wire. Therefore, a desired frequency characteristic can be exhibited without deteriorating the high-frequency characteristics even for a high-frequency semiconductor element such as a GHz band.

As described above, according to the present invention, a semiconductor device having a double-sided electrode structure in which a ground electrode is formed on the back surface is flip-chip mounted face down and sealed with a sealing material. A good grounding state is ensured while sealing, stable operation of the semiconductor element can be ensured and desired high-frequency characteristics can be exhibited, and high reliability is obtained by hermetically sealing the semiconductor element.
In addition, a semiconductor device which can be reduced in size can be provided.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an example of an embodiment of a semiconductor device of the present invention.

FIG. 2 is a sectional view showing another example of the embodiment of the semiconductor device of the present invention.

FIG. 3 is a sectional view showing still another example of the embodiment of the semiconductor device of the present invention.

[Explanation of symbols]

1, 21,... Insulating substrate 41, package for semiconductor element storage (insulating substrate) 2, 22, 42, semiconductor element 3, 23, 43, ground electrode 4, 24 , 44 ... wiring electrode 5, 25, 45 ... wiring electrode pad 6, 26, 46 ... ground electrode pad 8, 28, 48 ... conductive interconnection member 9, 30, 49 ... Solder or conductive paste 10, 31, 50 ... sealing resin

Claims (1)

[Claims] A semiconductor element having a ground electrode formed on an upper surface thereof mounted on a semiconductor element mounting portion formed on an upper surface of an insulating substrate; and a wiring electrode pad formed in the semiconductor element mounting portion and the semiconductor element. And a wiring electrode formed on the lower surface of the semiconductor element is electrically connected by a conductive interconnection member, and a ground electrode of the semiconductor element and a ground electrode pad formed near the semiconductor element mounting portion are soldered. Alternatively, the semiconductor device is connected with a conductive paste, and the semiconductor element, the ground electrode pad, and the solder or the conductive paste are sealed with a sealing resin.