JPH1197436A - 半導体集積回路のパッシベーション層形成方法 - Google Patents

半導体集積回路のパッシベーション層形成方法

Info

Publication number
JPH1197436A
JPH1197436A JP10130369A JP13036998A JPH1197436A JP H1197436 A JPH1197436 A JP H1197436A JP 10130369 A JP10130369 A JP 10130369A JP 13036998 A JP13036998 A JP 13036998A JP H1197436 A JPH1197436 A JP H1197436A
Authority
JP
Japan
Prior art keywords
passivation layer
film
forming
hsq
passivation film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP10130369A
Other languages
English (en)
Japanese (ja)
Inventor
Kousai Shin
▲こう▼ 縡 愼
Shigen Sai
志 鉉 崔
Heikin Ko
秉 槿 黄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH1197436A publication Critical patent/JPH1197436A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3171Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP10130369A 1997-09-12 1998-05-13 半導体集積回路のパッシベーション層形成方法 Withdrawn JPH1197436A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR97P47209 1997-09-12
KR1019970047209A KR19990025544A (ko) 1997-09-12 1997-09-12 반도체 집적 회로의 패시베이션층 형성방법

Publications (1)

Publication Number Publication Date
JPH1197436A true JPH1197436A (ja) 1999-04-09

Family

ID=19521265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10130369A Withdrawn JPH1197436A (ja) 1997-09-12 1998-05-13 半導体集積回路のパッシベーション層形成方法

Country Status (2)

Country Link
JP (1) JPH1197436A (ko)
KR (1) KR19990025544A (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020002732A (ko) * 2000-06-30 2002-01-10 박종섭 반도체 소자의 절연막 형성 방법
JP4236805B2 (ja) * 2000-10-18 2009-03-11 Necエレクトロニクス株式会社 半導体装置の製造方法および半導体装置

Also Published As

Publication number Publication date
KR19990025544A (ko) 1999-04-06

Similar Documents

Publication Publication Date Title
JPH0530050B2 (ko)
US5055906A (en) Semiconductor device having a composite insulating interlayer
JP2773660B2 (ja) 半導体装置
JPH08293554A (ja) 3層の誘電体層を有する半導体デバイス構造およびその製造方法
US5517062A (en) Stress released VLSI structure by the formation of porous intermetal layer
JP3054637B2 (ja) 集積回路のパッシベーション方法
CN115662903A (zh) 半导体器件的制作方法以及半导体器件
US6660624B2 (en) Method for reducing fluorine induced defects on a bonding pad surface
JPS6242537A (ja) スピンオンしたゲルマニウムガラス
JP2925960B2 (ja) 半導体装置の製造方法
US20030171001A1 (en) Method of manufacturing semiconductor devices
JPH1197436A (ja) 半導体集積回路のパッシベーション層形成方法
US7223630B2 (en) Low stress semiconductor device coating and method of forming thereof
JPH06267943A (ja) 半導体装置の製造方法
GB2366078A (en) Semiconductor device retaining a resist layer as a buffer layer
JP2006148007A (ja) 半導体装置の製造方法とその製造方法によって製造された半導体装置
JPS60249333A (ja) 半導体装置及びその製造方法
JPS6227745B2 (ko)
JPS5974651A (ja) 半導体装置
JPS63143839A (ja) 半導体集積回路の製造方法
JPH11168141A (ja) 半導体装置及びその製造方法
JP2942063B2 (ja) 半導体装置の製造方法
JPH07245286A (ja) 半導体素子の製造方法
JPS61260638A (ja) 半導体装置の製造方法
JPH02194530A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041215

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20050111