JPH1195250A - Method for inspecting lcd substrate - Google Patents

Method for inspecting lcd substrate

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Publication number
JPH1195250A
JPH1195250A JP25377497A JP25377497A JPH1195250A JP H1195250 A JPH1195250 A JP H1195250A JP 25377497 A JP25377497 A JP 25377497A JP 25377497 A JP25377497 A JP 25377497A JP H1195250 A JPH1195250 A JP H1195250A
Authority
JP
Japan
Prior art keywords
pixel
scanning
pixels
auxiliary capacitor
adjacent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP25377497A
Other languages
Japanese (ja)
Inventor
Masaki Hayashi
林  正樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advantest Corp
Original Assignee
Advantest Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corp filed Critical Advantest Corp
Priority to JP25377497A priority Critical patent/JPH1195250A/en
Publication of JPH1195250A publication Critical patent/JPH1195250A/en
Withdrawn legal-status Critical Current

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Testing Electric Properties And Detecting Electric Faults (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)

Abstract

PROBLEM TO BE SOLVED: To enable the inspection of a substrate having no gate control terminals and the exact inspection of pixel defects by using the charges charged into the auxiliary capacitors of all pixels as discharge currents to an IV converter and successively measuring the peak values thereof. SOLUTION: The charges charged by the prescribed high voltage to the auxiliary capacitors of the prescribed pixels scanned through video terminals 23 are subjected to IV conversion and the peak values of the discharge currents are successively measured. The pixel defects relating to the respective pixels as well as the defects relating to X-Y scanning lines are decided. The measurement is executed by applying the set ring time capable of sufficiently discharging the charges of the auxiliary capacitors. Data lines and gate lines for pixel scanning are sequentially scanned at a desired low-speed clock and the discharge currents from the video terminals 23 are converted to voltage signals by the IV converter 42 of an IV conversion circuit 43. Peak voltages are held by an S and H circuit 34 and are subjected to prescribed amplification by an amplifier 35. The voltages are then subjected to AD conversion by a converter 36 and are successively stored into a buffer memory 38. Decision processing is executed by an image processing section 37 after the completion of the measurement.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、多結晶TFT
(Thin Film Transistor)等の液晶表示器のLCD基板
における各画素に係る欠陥、並びにXY走査線に係る欠
陥を検出するLCD基板検査方法に関する。
The present invention relates to a polycrystalline TFT.
The present invention relates to an LCD substrate inspection method for detecting a defect related to each pixel on an LCD substrate of a liquid crystal display such as a (Thin Film Transistor) and a defect related to an XY scanning line.

【0002】[0002]

【従来の技術】従来技術例について図4のLCD基板の
内部回路構成例と、図5のLCD基板検査装置の測定構
成例と、図6の測定のタイミングチャートを参照して以
下に説明する。尚、従来公知技術として、特願平08−
165385号の「LCD基板検査装置」がある。
2. Description of the Related Art A prior art example will be described below with reference to an example of an internal circuit configuration of an LCD board in FIG. 4, an example of a measurement configuration of an LCD board inspection apparatus in FIG. 5, and a measurement timing chart in FIG. As a conventionally known technique, Japanese Patent Application No.
No. 165385, there is an "LCD board inspection apparatus".

【0003】初めに図4の被試験LCD基板10につい
て内部回路構成と動作を簡単に説明する。検査時のLC
D基板は、未だ液晶が実装されていない状態の基板であ
り、この段階で基板内部の多数の薄膜トランジスタの動
作や、配線パターンの断線・隣接回路との短絡あるいは
絶縁不良や、補助コンデンサの漏洩特性等の良否検査が
行われる。LCD基板10は、薄膜基板上に多数の平行
したゲート線19j(ここでj=1〜m)と、これと直交し
て多数の平行したデータ線(映像信号走査線)20i
(ここでi=1〜n)が配線されている。これらの各交差
点部には、TFTである薄膜トランジスタが配置されて
いて、直近のゲート線19jにはトランジスタのゲート
が、直近のデータ線20iにはトランジスタのソースが
接続され、トランジスタのドレインには補助コンデンサ
15ijが接続され、この補助コンデンサ15ijの他端は
共通接地端子22に接続されている。このように非常に
多数の画素がマトリックス状に配置されている。この為
ビデオ端子23は通常複数本のビデオ端子231〜23p
を有しているものが一般的である。ところで従来の一般
的なLCD基板10にはゲート制御端子9が設けられ、
行選択シフトレジスタ11の出力端とゲート線191〜
19m間にANDゲート181〜18mが設けられて、ゲ
ート制御端子9の信号により行選択シフトレジスタ11
の出力を一括して禁止できる回路を有している。
First, an internal circuit configuration and operation of the LCD substrate under test 10 shown in FIG. 4 will be briefly described. LC at inspection
The D substrate is a substrate on which no liquid crystal has been mounted yet. At this stage, the operation of many thin film transistors inside the substrate, disconnection of wiring patterns, short-circuiting or insulation failure with adjacent circuits, and leakage characteristics of auxiliary capacitors And so on. The LCD substrate 10 has a large number of parallel gate lines 19j (here, j = 1 to m) and a large number of parallel data lines (video signal scanning lines) 20i orthogonal thereto.
(Where i = 1 to n) are wired. At each of these intersections, a thin film transistor, which is a TFT, is arranged. The gate of the transistor is connected to the nearest gate line 19j, the source of the transistor is connected to the nearest data line 20i, and the drain of the transistor is connected to the drain of the transistor. The other end of the auxiliary capacitor 15ij is connected to the common ground terminal 22. Thus, a very large number of pixels are arranged in a matrix. Therefore, the video terminal 23 usually has a plurality of video terminals 231 to 23p.
Is generally used. Incidentally, a gate control terminal 9 is provided on a conventional general LCD substrate 10,
The output terminal of the row selection shift register 11 and the gate lines 191-
AND gates 18 1 to 18 m are provided between 19 m, and a row selection shift register 11
Has a circuit that can collectively prohibit the outputs.

【0004】次に前記ゲート制御端子9を有するLCD
基板における従来の検査方法を図5のLCD基板検査装
置の測定構成例と共に以下に説明する。この検査装置の
構成は試験パターン発生部39と、LCD基板10と、
ドライバ40と、IV変換回路43と、アナログマルチ
プレクサ47と、S&H回路(サンプル&ホールド回
路)34と、増幅器35と、AD変換器36と、画像処
理部37とで成る。尚IV変換回路43の内部構成は原
理ブロックで示す。
Next, an LCD having the gate control terminal 9
A conventional inspection method for a substrate will be described below together with a measurement configuration example of the LCD substrate inspection apparatus of FIG. The configuration of the inspection apparatus includes a test pattern generation unit 39, an LCD substrate 10,
It includes a driver 40, an IV conversion circuit 43, an analog multiplexer 47, an S & H circuit (sample and hold circuit) 34, an amplifier 35, an AD converter 36, and an image processing unit 37. The internal configuration of the IV conversion circuit 43 is shown by a principle block.

【0005】特願平08−165385号に開示の検査
方法によれば、図6に示す動作のタイミングチャートに
おいて、『(A)は1行選択している期間の列選択の期
間を示す。つまり、書き込み期間とビデオライン群21
及びデータ線20i の浮遊容量の電荷消却期間と読み出
し期間とである。(B)はビデオ端子23に印加するH
電圧及びL電圧であり、書き込み期間に例えば12V
を、他の期間には共通接地電位の0Vを与えている。
(C)はゲート線19j をオフにするゲート制御であ
り、電荷消却期間、いわゆるクリア期間のみオフにす
る。』の記述と、図4に示す回路図で『ゲート制御端子
9からゲート18j を閉じる信号を与える』の記述がさ
れている。即ち前記ゲート制御端子9を有するLCD基
板を想定した検査方法であった。
According to the inspection method disclosed in Japanese Patent Application No. 08-165385, in the timing chart of the operation shown in FIG. 6, "(A) shows a column selection period in which one row is selected. That is, the writing period and the video line group 21
And the charge extinction period and the readout period of the stray capacitance of the data line 20i. (B) shows H applied to the video terminal 23.
Voltage and L voltage, for example, 12 V during the writing period.
During the other period, 0 V of the common ground potential is applied.
(C) is a gate control for turning off the gate line 19j, which is turned off only during the charge elimination period, that is, the so-called clear period. And the description "giving a signal from gate control terminal 9 to close gate 18j" in the circuit diagram shown in FIG. That is, the inspection method assumes an LCD substrate having the gate control terminal 9.

【0006】[0006]

【発明が解決しようとする課題】上記説明のように、従
来では図4に示すゲート制御端子9を有し、この端子を
制御して行選択シフトレジスタ11の出力を禁止する検
査方法であった。しかしながら、LCD基板の品種には
このゲート制御端子9及びANDゲート181〜18mが
削除されたものがある。また、カラー表示等の品質向上
要求に伴い特定の画素やXY走査線に係る欠陥を一層的
確に検査把握する必要性がでてきた。そこで、本発明が
解決しようとする課題は、ゲート制御端子を有しないL
CD基板の画素及びXY走査線に係る検査方法、並びに
画素欠陥の一層的確な検査方法を実現するLCD基板検
査方法を提供することである。
As described above, the conventional inspection method has the gate control terminal 9 shown in FIG. 4 and controls the terminal to inhibit the output of the row selection shift register 11. . However, some LCD substrate types have the gate control terminal 9 and the AND gates 181 to 18m removed. Further, with the demand for quality improvement of color display and the like, it has become necessary to inspect and grasp defects related to specific pixels and XY scanning lines more accurately. Therefore, the problem to be solved by the present invention is to solve the problem of L having no gate control terminal.
An object of the present invention is to provide an inspection method relating to pixels and XY scanning lines of a CD substrate, and an LCD substrate inspection method which realizes a more accurate inspection method for pixel defects.

【0007】[0007]

【課題を解決するための手段】第1図と第2図と第7図
と第8図は、本発明に係る解決手段を示している。第1
に、上記課題を解決するために、本発明の構成では、被
試験LCD基板10内にXY格子配列形成された画素の
補助コンデンサ15ij、これをスイッチする薄膜トラン
ジスタ1411〜14nm、画素を駆動するXY走査線(列
走査用のデータ線と行走査用のゲート線)及びこれらに
係る欠陥を検出するLCD基板検査方法において、画素
走査用のデータ線201〜20nとゲート線191〜19m
を順次走査し、ビデオ端子23を通じて走査された所定
画素の補助コンデンサ15ijへ所定高電圧で充電する充
電ステップ110を具備し、ビデオ端子23に通じる信
号路及び列走査用のデータ線201〜20n上の電荷をゼ
ロに消去する電荷消去ステップ120を具備し、画素走
査用の該データ線201〜20nとゲート線191〜19m
を順次走査し、ビデオ端子23を通じて全ての画素の補
助コンデンサ15ijに充電された電荷をIV変換して放
電電流のピーク値を順次測定する放電読出しステップ1
30を具備し、得られた測定結果のピーク値の平均値の
偏差から各画素に係る画素欠陥、並びにXY走査線に係
る欠陥を判定する判定処理ステップ140を具備する検
査方法である。上記発明によれば、ゲート制御端子を有
しないLCD基板の画素及びXY走査線に係る検査方法
が実現できる。
FIG. 1, FIG. 2, FIG. 7, and FIG. 8 show a solution according to the present invention. First
In order to solve the above problem, in the configuration of the present invention, the auxiliary capacitor 15ij of the pixel formed in the XY lattice array in the LCD substrate 10 to be tested, the thin film transistors 141 1 to 14 nm for switching the auxiliary capacitor 15ij, and the XY scanning for driving the pixel In the LCD substrate inspection method for detecting lines (data lines for column scanning and gate lines for row scanning) and defects related thereto, data lines 201 to 20n for pixel scanning and gate lines 191 to 19m are provided.
Is sequentially charged and the auxiliary capacitor 15ij of a predetermined pixel scanned through the video terminal 23 is charged with a predetermined high voltage. The charging step 110 is performed on the signal path leading to the video terminal 23 and the data lines 201 to 20n for column scanning. The data lines 201 to 20n for scanning pixels and the gate lines 191 to 19m.
Is sequentially scanned, and the charges charged in the auxiliary capacitors 15ij of all the pixels through the video terminal 23 are IV-converted to sequentially measure the peak value of the discharge current.
30 is an inspection method including a judgment processing step 140 for judging a pixel defect relating to each pixel and a defect relating to the XY scanning line from the deviation of the average value of the peak values of the obtained measurement results. According to the above invention, it is possible to realize an inspection method relating to pixels of an LCD substrate having no gate control terminal and XY scanning lines.

【0008】第9図と第10図は、本発明に係る解決手
段を示している。第2に、上記課題を解決するために、
本発明の構成では、被試験LCD基板10内にXY格子
配列形成された画素の補助コンデンサ15ij、これをス
イッチする薄膜トランジスタ1411〜14nm、画素を駆
動するXY走査線及びこれらに係る欠陥を検出するLC
D基板検査方法において、画素走査用のデータ線201
〜20nとゲート線191〜19mにより少なくとも注目
及び隣接する画素の補助コンデンサ15ij、または注目
及び隣接する走査線上の画素の補助コンデンサ15ijを
走査し、ビデオ端子23を通じて、注目する画素または
注目する走査線上の画素の補助コンデンサ15ijへ所定
高電圧で充電し、隣接する画素または隣接する走査線上
の画素の補助コンデンサ15ijへ異なる所定電圧あるい
はゼロ電圧で充電する充電ステップ110を具備し、ビ
デオ端子23に通じる信号路及び列走査用のデータ線2
01〜20n上の電荷をゼロに消去する電荷消去ステップ
120を具備し、画素走査用の該データ線201〜20n
とゲート線191〜19mを順次走査し、ビデオ端子23
を通じて少なくとも注目及び隣接する画素の補助コンデ
ンサ15ijに充電された電荷をIV変換して放電電流の
ピーク値を順次測定する放電読出しステップ130を具
備し、得られた測定結果のピーク値の平均値の偏差から
隣接画素間に係る画素欠陥、並びに隣接する走査線に係
る欠陥を判定する判定処理ステップ140を具備する検
査方法がある。上記発明によれば、ゲート制御端子を使
用しないLCD基板における隣接する画素あるいは隣接
するXY走査線との絶縁不良欠陥の一層的確な検査方法
が実現できる。
FIG. 9 and FIG. 10 show a solution according to the present invention. Second, to solve the above problems,
In the configuration of the present invention, the auxiliary capacitors 15ij of the pixels formed in the XY lattice array in the LCD substrate 10 under test, the thin film transistors 141 1 to 14 nm for switching the auxiliary capacitors 15 ij, the XY scanning lines for driving the pixels, and the LCs for detecting defects related thereto.
In the D board inspection method, the data line 201 for pixel scanning is used.
20n and the gate lines 191 to 19m scan at least the auxiliary capacitor 15ij of the pixel of interest and the adjacent pixel or the auxiliary capacitor 15ij of the pixel on the pixel of interest and the adjacent scanning line, and through the video terminal 23, the pixel of interest or the pixel of interest. A charging step 110 for charging the auxiliary capacitor 15ij of the pixel with a predetermined high voltage and charging the auxiliary capacitor 15ij of an adjacent pixel or a pixel on an adjacent scanning line with a different predetermined voltage or zero voltage. Signal path and data line 2 for column scanning
A charge erasing step 120 for erasing charges on the data lines 201 to 20n to zero;
And the gate lines 191 to 19m are sequentially scanned, and the video terminal 23
A discharge reading step 130 for IV-converting the charge charged in the auxiliary capacitor 15ij of at least the pixel of interest and the adjacent pixel and sequentially measuring the peak value of the discharge current, and calculating the average value of the peak values of the obtained measurement results. There is an inspection method including a judgment processing step 140 for judging a pixel defect between adjacent pixels and a defect on an adjacent scanning line from the deviation. According to the present invention, it is possible to realize a more accurate inspection method for an insulation failure defect between an adjacent pixel or an adjacent XY scanning line on an LCD substrate that does not use a gate control terminal.

【0009】また、上述検査方法において、画素の補助
コンデンサ15ijを充電走査する充電ステップ110か
ら、補助コンデンサ15ijに充電された電荷を読出し走
査をする放電読出しステップ130間を、所定複数回繰
返して放電電流データを累積加算するアベレージング処
理を追加して、S/Nを向上させる方法がある。
In the above-described inspection method, the discharge is repeatedly performed a predetermined number of times from a charging step 110 for charging and scanning the auxiliary capacitor 15ij of the pixel to a discharging reading step 130 for reading and scanning the charge stored in the auxiliary capacitor 15ij. There is a method of improving the S / N by adding an averaging process for cumulatively adding current data.

【0010】[0010]

【発明の実施の形態】以下に本発明の実施の形態を実施
例と共に図面を参照して詳細に説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below in detail with reference to the drawings together with embodiments.

【0011】本発明実施例について図1の測定のタイミ
ングチャートと、図2のIV変換出力信号の一例と、図
3のゲート制御端子を有しないLCD基板の内部回路構
成例と図7のLCD基板検査装置の測定構成例と、図8
の測定結果の画素分布の二次元配列表示例を参照して以
下に説明する。尚、従来構成に対応する要素は同一符号
を付す。
FIG. 1 is a timing chart of the measurement, FIG. 2 shows an example of an IV conversion output signal, FIG. 3 shows an example of the internal circuit configuration of an LCD substrate without a gate control terminal, and FIG. FIG. 8 shows an example of the measurement configuration of the inspection apparatus.
This will be described below with reference to an example of a two-dimensional array display of the pixel distribution of the measurement result. Elements corresponding to the conventional configuration are denoted by the same reference numerals.

【0012】被試験LCD基板10内に格子配列形成さ
れた画素の補助コンデンサ1511〜15nm、これをスイ
ッチする薄膜トランジスタ1411〜14nm、XY走査線
及びこれらに係る欠陥を検出する為に本発明のLCD基
板検査方法は、以下に説明する充電ステップ110と、
走査線路の電荷消去ステップ120と、放電読出しステ
ップ130と、判定処理ステップ140の手順で試験す
る。尚、この4段階の手順を示すフローチャート図は省
略する。
Auxiliary capacitors 1511 to 15 nm of pixels formed in a grid array in the LCD substrate 10 to be tested, thin film transistors 141 1 to 14 nm for switching the same, XY scanning lines, and the LCD substrate of the present invention for detecting defects related thereto. The inspection method includes a charging step 110 described below,
A test is performed in the order of the scanning line charge erasing step 120, the discharge reading step 130, and the determination processing step 140. It should be noted that a flowchart showing the four steps is omitted.

【0013】充電ステップ110は、図1Aに示す電荷
書込み期間であり、通常の液晶画面の1フレーム分の表
示走査と同様にして全画素へ書込みを行う。この1フレ
ーム分の表示走査を行うことで図3のLCD基板のよう
にゲート制御端子9を有しない試験対象へ適用が可能と
なる。先ず、画素走査用のデータ線201〜20nとゲー
ト線191〜19mを順次走査するように、LCD基板1
0のDX、CLX1〜4、DY、CLY端子へ試験パタ
ーン発生部39から所定のタイミング信号を発生供給す
る(図1B〜E参照)。また、この期間は試験パターン
発生部39の出力信号をドライバ40で所定高電圧に変
換した後、図7に示すIV変換回路43のスイッチ41
を通じてビデオ端子23へ高電圧(図1F参照)を供給
し、全ての画素の補助コンデンサ15ijを高電圧に充電
する。尚、各画素の補助コンデンサ15ijへの充電時間
は、十分な充電セットリング時間が得られるように、所
望速度のクロックCLX1〜4を供給する。
The charging step 110 is a charge writing period shown in FIG. 1A, in which writing is performed on all the pixels in the same manner as a normal display scan for one frame of a liquid crystal screen. By performing the display scanning for one frame, it is possible to apply the present invention to a test object having no gate control terminal 9 like the LCD substrate of FIG. First, the LCD substrate 1 is so arranged that the data lines 201 to 20n for pixel scanning and the gate lines 191 to 19m are sequentially scanned.
A predetermined timing signal is generated and supplied from the test pattern generator 39 to DX, CLX1 to 4, DY, and CLY terminals of 0 (see FIGS. 1B to 1E). During this period, after the output signal of the test pattern generation section 39 is converted into a predetermined high voltage by the driver 40, the switch 41 of the IV conversion circuit 43 shown in FIG.
A high voltage (see FIG. 1F) is supplied to the video terminal 23 through the sub-pixels, and the auxiliary capacitors 15ij of all the pixels are charged to the high voltage. For the charging time of the auxiliary capacitor 15ij of each pixel, clocks CLX1 to CLX4 of a desired speed are supplied so that a sufficient charging settling time can be obtained.

【0014】走査線路の電荷消去ステップ120は、ド
ライバ40の出力電圧をゼロにして図3に示すビデオラ
イン群21及び列走査用のデータ線201〜20n上の電
荷をゼロに消去する。即ち、信号DYは与えず、信号D
XとCLX1〜4のみを与えて順次データ線201〜2
0nを走査し、ビデオ端子23を通じて走査線路上の電
荷をゼロ状態に消去する。尚、隣接回路間との絶縁不良
の検出を容易としたい場合には、上記電荷消去ステップ
120後、更に所望の長い待ち時間を与えると良い。
In the scanning line charge erasing step 120, the output voltage of the driver 40 is set to zero, and the charges on the video line group 21 and the column scanning data lines 201 to 20n shown in FIG. 3 are erased to zero. That is, the signal DY is not applied, and the signal D
X and CLX1 to 4 only are applied, and data lines 201 to 2 are sequentially output.
0n is scanned, and the charge on the scanning line is erased to a zero state through the video terminal 23. In order to facilitate the detection of insulation failure between adjacent circuits, a desired longer waiting time may be given after the charge erasing step 120.

【0015】放電読出しステップ130は、全画素の補
助コンデンサ15ijに充電された電荷を順次測定する。
このとき試験パターン発生部39からは所望の低速のク
ロック(図1E参照)を供給して補助コンデンサ15ij
の電荷を十分に放電可能なセットリング時間を与えて測
定を行う。先ず、上述充電ステップ110と同様にして
画素走査用のデータ線201〜20nとゲート線191〜
19mを所望の低速のクロックで順次走査実施する。こ
の走査によるビデオ端子23からの放電電流はIV変換
回路43のスイッチ41を通じてIV変換器42に供給
され、放電電流が電圧信号に変換され(図1G参照)、
アナログマルチプレクサ47を通じてS&H回路34で
電圧信号のピーク電圧(図2D,E,F参照)をホール
ドし、増幅器35で所定に増幅し、AD変換器36でデ
ジタルデータに変換された後、画像処理部37のバッフ
ァメモリ38へ順次格納する。
In the discharge reading step 130, the charges charged in the auxiliary capacitors 15ij of all the pixels are sequentially measured.
At this time, a desired low-speed clock (see FIG. 1E) is supplied from the test pattern generator 39 to supply the auxiliary capacitor 15ij
The measurement is performed by giving a settling time capable of sufficiently discharging the electric charge. First, the data lines 201 to 20n for pixel scanning and the gate lines 191 to
19m is sequentially scanned with a desired low-speed clock. The discharge current from the video terminal 23 by this scanning is supplied to the IV converter 42 through the switch 41 of the IV conversion circuit 43, and the discharge current is converted into a voltage signal (see FIG. 1G).
The peak voltage (see FIGS. 2D, 2E, and 2F) of the voltage signal is held by the S & H circuit 34 through the analog multiplexer 47, is amplified to a predetermined level by the amplifier 35, and is converted into digital data by the AD converter 36. 37 are sequentially stored in the buffer memory 38.

【0016】判定処理ステップ140は、上述測定完了
後に画像処理部37が行い、第1に各画素に係る画素欠
陥の検出判定と、第2にXY走査線に係る欠陥を検出判
定する。即ち、第1の各画素に係る画素欠陥の検出判定
は、バッファメモリ38へ格納された全画素の各測定デ
ータを読み出し、全測定データの平均値を求め、これか
らの偏差により各画素に係る欠陥の判定を行う。例えば
画素スイッチ用の薄膜トランジスタ14ijが断線不良欠
陥の場合は補助コンデンサ15ijの電荷が正常に読み出
せなくなる結果小ピーク値(図2E参照)あるいはゼロ
として検出され、また補助コンデンサ15ijと共通接地
端子22や隣接回路との絶縁不良やショートの場合も小
ピーク値として検出される。また隣接画素間とのショー
トの場合は補助コンデンサ15ijが並列接続されるた
め、両画素への最初の走査の場合は電荷が大ピーク値
(図2F参照)として検出され、後の走査の場合は電荷
が放電済であるからピーク値ゼロとして検出される。第
2のXY走査線に係る欠陥の第1判定手法としては、上
述測定データを画素配列に対応して図8の二次元配列の
分布表示例に示すように、ピーク値の大小の分布配列の
状況から欠陥要因を容易に判断できる。例えば図8Aか
らはデータ線201の途中断線、図8Bからはゲート線
19jの途中断線として容易に判断でき、図8Cからは
隣接データ線20i間のショートとして容易に判断でき
る。またXY走査線に係る欠陥の第2判定手法として
は、上述測定データにおいて各走査線の列単位の加算平
均値を求め、これから各XY走査線単位の偏差が所定以
上の偏差の場合には当該走査線に係る欠陥として判断す
る方法もある。
The determination processing step 140 is performed by the image processing section 37 after the above-described measurement is completed, and firstly, the detection and determination of the pixel defect relating to each pixel, and secondly, the detection and determination of the defect relating to the XY scanning line. That is, the first determination of the pixel defect relating to each pixel is performed by reading out the measurement data of all the pixels stored in the buffer memory 38, obtaining the average value of all the measurement data, and determining the average value of the defect of each pixel by a deviation from this. Is determined. For example, when the thin film transistor 14ij for the pixel switch has a disconnection defect, the charge of the auxiliary capacitor 15ij cannot be read out normally, and is detected as a small peak value (see FIG. 2E) or zero. Insulation failure or short circuit with an adjacent circuit is also detected as a small peak value. In the case of a short circuit between adjacent pixels, the auxiliary capacitor 15ij is connected in parallel, so that the charge is detected as a large peak value (see FIG. 2F) in the case of the first scan of both pixels, and in the case of the subsequent scan. Since the charge has been discharged, the peak value is detected as zero. As a first determination method of the defect related to the second XY scanning line, as shown in a distribution display example of a two-dimensional array of FIG. The defect factor can be easily determined from the situation. For example, from FIG. 8A, it can be easily determined as a disconnection in the middle of the data line 201, from FIG. 8B, it can be easily determined as a disconnection in the middle of the gate line 19j, and from FIG. 8C, it can be easily determined as a short between adjacent data lines 20i. As a second method of determining a defect related to the XY scanning line, an average value of each scanning line in a unit of a column is obtained from the above-mentioned measurement data. There is also a method of judging as a defect related to a scanning line.

【0017】尚、測定時におけるS/Nを向上させる為
に、所望により上述充電ステップ110から放電読出し
ステップ130を繰り返し所定複数回実施してバッファ
メモリ38へ累積加算させて平均化(アベレージング)
する手段を追加する方法としても良い。
Incidentally, in order to improve the S / N at the time of measurement, if necessary, the above-mentioned charging step 110 to discharging reading step 130 are repeatedly carried out a predetermined number of times, and cumulatively added to the buffer memory 38 for averaging (averaging).
It is also possible to add a means for performing this.

【0018】上述した発明構成の方法によれば、充電ス
テップ110を具備し、走査線路の電荷消去ステップ1
20を具備し、放電読出しステップ130を具備し、判
定処理ステップ140を具備することにより、ゲート制
御端子9を使用することなくLCD基板の検査方法が実
現でき、各画素に係る画素欠陥、並びにXY走査線に係
る欠陥を検出することが可能となる大きな利点が得られ
る。
According to the method of the invention described above, the method includes the charging step 110, and the scanning line charge erasing step 1
20 and the discharge readout step 130 and the judgment processing step 140, the inspection method of the LCD substrate can be realized without using the gate control terminal 9, and the pixel defect related to each pixel and XY There is a great advantage that it is possible to detect a defect related to a scanning line.

【0019】尚、上述実施例の説明では、全ての画素の
補助コンデンサ15ijへ所定高電圧に充電する具体例で
説明していたが、検査対象である注目すべき画素あるい
は注目走査線の画素と、隣接する隣接画素間あるいは隣
接走査線の画素間における絶縁不良がある場合は、不良
条件によって検出特定しにくい場合がある。この場合隣
接回路間の絶縁不良を特定する他の検査方法としては、
充電ステップ110時において図10に示す測定タイミ
ングチャート及び図9A、Bの充電状態図に示すよう
に、注目すべき画素あるいは走査線の画素に対して高電
圧Hを書込みし、隣接する隣接画素間あるいは隣接走査
線の画素に対してゼロ電圧Lを書込みして隣接回路間に
電位差を与えて充電する。この後、隣接画素間の絶縁不
良を検出容易とする所望の待ち時間待ちを設ける。この
待ち時間経過後、上述実施例の放電読出しステップ13
0により、同様にして全体あるいは関連する画素領域の
放電電流を読出し測定する。そして他の画素あるいは走
査線の平均値を予め求めておいた値と、今回測定した注
目画素あるいは走査線の値との差異を求めることで、隣
接画素間の絶縁不良の分布状況が得られる。この結果、
隣接画素間あるいは隣接走査線間との絶縁不良に係る欠
陥要因をより一層的確に特定できる利点が得られる。
In the above description of the embodiment, a specific example in which the auxiliary capacitors 15ij of all the pixels are charged to a predetermined high voltage has been described. If there is an insulation failure between adjacent pixels or between pixels on an adjacent scanning line, it may be difficult to detect and identify the failure depending on the failure condition. In this case, as another inspection method for specifying insulation failure between adjacent circuits,
At the time of the charging step 110, as shown in the measurement timing chart of FIG. 10 and the charging state diagrams of FIGS. 9A and 9B, the high voltage H is written to the pixel of interest or the pixel of the scanning line, and Alternatively, charging is performed by writing a zero voltage L to the pixels on the adjacent scanning line to give a potential difference between adjacent circuits. Thereafter, a desired waiting time is provided for facilitating detection of insulation failure between adjacent pixels. After the elapse of the waiting time, the discharge reading step 13 of the above-described embodiment is performed.
With 0, the discharge current of the entire or related pixel area is read out and measured in the same manner. Then, by calculating the difference between the value obtained in advance for the average value of the other pixels or the scanning lines and the value of the target pixel or the scanning line measured this time, the distribution status of insulation failure between adjacent pixels can be obtained. As a result,
The advantage is obtained that the cause of the defect related to the insulation failure between the adjacent pixels or between the adjacent scanning lines can be specified more accurately.

【0020】[0020]

【発明の効果】本発明は、上述の説明内容から、下記に
記載される効果を奏する。上述発明の方法によれば、ゲ
ート制御端子9を有しないLCD基板においても画素欠
陥の検査方法が実現できる。本発明の検査方法では、ビ
デオ端子23を通じて全ての画素の補助コンデンサ15
ijへ所定高電圧に充電する充電ステップ110を具備
し、ビデオライン群21及び列走査用のデータ線201
〜20n上の電荷をゼロに消去する走査線路の電荷消去
ステップ120を具備し、ビデオ端子23を通じて全て
の画素の補助コンデンサ15ijに充電された電荷をIV
変換器へ放電電流とし、この放電電流のピーク値を順次
測定する放電読出しステップ130を具備し、得られた
測定結果のピーク値の偏差から各画素に係る画素欠陥、
並びにXY走査線に係る欠陥を判定する判定処理ステッ
プ140を具備することにより、各画素に係る画素欠
陥、並びにXY走査線に係る欠陥を検出することが可能
となる大きな利点が得られる。また、注目すべき画素あ
るいは注目走査線の画素と、対向する隣接画素間あるい
は隣接走査線の画素間へ電位差を与えるように異なる電
圧で充電して読出す検査方法においては隣接画素間ある
いは隣接走査線間との絶縁不良の欠陥要因をより的確に
特定できる為、両者を併用することで画素欠陥・走査線
欠陥に係る検査をより一層的確に実現できる。
According to the present invention, the following effects can be obtained from the above description. According to the method of the present invention, a pixel defect inspection method can be realized even on an LCD substrate having no gate control terminal 9. In the inspection method of the present invention, the auxiliary capacitors 15 of all the pixels are connected through the video terminal 23.
a charging step 110 for charging ij to a predetermined high voltage; a video line group 21 and a data line 201 for column scanning;
A scanning line charge erasing step 120 for erasing the electric charge on .about.20 n to zero, and transferring the electric charges charged to the auxiliary capacitors 15 ij of all the pixels through the video terminal 23 to IV.
A discharge readout step 130 for sequentially measuring a peak value of the discharge current as a discharge current to the converter, and obtaining a pixel defect relating to each pixel from a deviation of the peak value of the obtained measurement result;
In addition, the provision of the determination processing step 140 for determining a defect related to the XY scanning line has a great advantage that a pixel defect related to each pixel and a defect related to the XY scanning line can be detected. Further, in an inspection method of charging and reading with a different voltage so as to give a potential difference between a pixel of interest or a pixel of a scanning line of interest and an adjacent adjacent pixel or between pixels of an adjacent scanning line, an adjacent pixel or an adjacent scanning line is used. Since the defect factor of the insulation failure between the lines can be more accurately specified, the inspection for the pixel defect and the scanning line defect can be more accurately realized by using both of them.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の、測定のタイミングチャートである。FIG. 1 is a timing chart of measurement according to the present invention.

【図2】本発明の、IV変換出力信号の一例である。FIG. 2 is an example of an IV conversion output signal of the present invention.

【図3】ゲート制御端子を有しないLCD基板の内部回
路構成例である。
FIG. 3 is an example of an internal circuit configuration of an LCD substrate having no gate control terminal.

【図4】LCD基板の内部回路構成例である。FIG. 4 is an example of an internal circuit configuration of an LCD substrate.

【図5】従来の、LCD基板検査装置の測定構成例であ
る。
FIG. 5 is an example of a measurement configuration of a conventional LCD substrate inspection apparatus.

【図6】従来の、測定のタイミングチャートである。FIG. 6 is a timing chart of a conventional measurement.

【図7】本発明の、LCD基板検査装置の測定構成例で
ある。
FIG. 7 is an example of a measurement configuration of the LCD substrate inspection apparatus of the present invention.

【図8】本発明の、画素分布の二次元配列の分布表示例
である。
FIG. 8 is a distribution display example of a two-dimensional array of pixel distributions according to the present invention.

【図9】本発明の、注目すべき画素と隣接画素間への充
電状態図である。
FIG. 9 is a diagram illustrating a charged state between a pixel of interest and an adjacent pixel according to the present invention.

【図10】本発明の、注目すべき画素あるいは走査線に
対する測定のタイミングチャートである。
FIG. 10 is a timing chart of measurement of a pixel or a scanning line of interest according to the present invention.

【符号の説明】[Explanation of symbols]

CLX1〜4 クロック 9 ゲート制御端子 10 LCD基板 11 行選択シフトレジスタ 1411〜14nm,14ij 薄膜トランジスタ 1511〜15nm,15ij 補助コンデンサ 181〜18m ANDゲート 191〜19m,19j ゲート線(映像信号走査線) 201〜20n,20i データ線 21 ビデオライン群 211〜21p ビデオライン 23,231〜23p ビデオ端子 34 S&H回路(サンプル&ホールド回路) 35 増幅器 36 AD変換器 37 画像処理部 38 バッファメモリ 39 試験パターン発生部 40 ドライバ 41 スイッチ 42 IV変換器 43 IV変換回路 47 アナログマルチプレクサ CLX1 to 4 Clock 9 Gate control terminal 10 LCD substrate 11 Row select shift register 1411 to 14 nm, 14ij Thin film transistor 1511 to 15 nm, 15ij Auxiliary capacitor 181 to 18 m AND gate 191 to 19 m, 19j Gate line (video signal scanning line) 201 to 20n , 20i Data line 21 Video line group 211 to 21p Video line 23, 231 to 23p Video terminal 34 S & H circuit (sample and hold circuit) 35 Amplifier 36 A / D converter 37 Image processing unit 38 Buffer memory 39 Test pattern generation unit 40 Driver 41 Switch 42 IV converter 43 IV conversion circuit 47 Analog multiplexer

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 被試験LCD基板内にXY格子配列形成
された画素の補助コンデンサ、画素を駆動するXY走査
線(列走査用のデータ線と行走査用のゲート線)及びこ
れらに係る欠陥を検出するLCD基板検査方法におい
て、 画素走査用のデータ線とゲート線を順次走査し、ビデオ
端子を通じて走査された所定画素の補助コンデンサへ所
定高電圧で充電する充電ステップと、 該ビデオ端子に通じる信号路及び列走査用のデータ線上
の電荷をゼロに消去する電荷消去ステップと、 該ビデオ端子を通じて全ての画素の補助コンデンサに充
電された電荷を順次測定する放電読出しステップと、 得られた測定結果の偏差から各画素に係る画素欠陥、並
びにXY走査線に係る欠陥を判定する判定処理ステップ
と、 を特徴としたLCD基板検査方法。
1. An auxiliary capacitor for a pixel formed in an XY lattice array in an LCD substrate under test, an XY scanning line (a data line for column scanning and a gate line for row scanning) for driving the pixel, and defects related thereto. In the method of inspecting an LCD substrate for detecting, a charging step of sequentially scanning a pixel scanning data line and a gate line and charging an auxiliary capacitor of a predetermined pixel scanned through a video terminal with a predetermined high voltage, and a signal passing through the video terminal A charge erasing step of erasing charges on the data lines for scanning and column scanning to zero; a discharge reading step of sequentially measuring charges charged to the auxiliary capacitors of all the pixels through the video terminals; A judgment processing step of judging a pixel defect relating to each pixel and a defect relating to an XY scanning line from the deviation;
【請求項2】 被試験LCD基板内にXY格子配列形成
された画素の補助コンデンサ、画素を駆動するXY走査
線及びこれらに係る欠陥を検出するLCD基板検査方法
において、 画素走査用のデータ線とゲート線により少なくとも注目
及び隣接する画素の補助コンデンサ、または注目及び隣
接する走査線上の画素の補助コンデンサを走査し、ビデ
オ端子を通じて、注目する画素または注目する走査線上
の画素の補助コンデンサへ所定高電圧で充電し、隣接す
る画素または隣接する走査線上の画素の補助コンデンサ
へ異なる所定電圧あるいはゼロ電圧で充電する充電ステ
ップと、 該ビデオ端子に通じる信号路及び列走査用のデータ線上
の電荷をゼロに消去する電荷消去ステップと、 該ビデオ端子を通じて少なくとも注目及び隣接する画素
の補助コンデンサに充電された電荷を順次測定する放電
読出しステップと、 得られた測定結果の偏差から隣接画素間に係る画素欠
陥、並びに隣接する走査線に係る欠陥を判定する判定処
理ステップと、 を特徴としたLCD基板検査方法。
2. An LCD substrate inspection method for detecting an auxiliary capacitor of pixels formed in an XY lattice array in an LCD substrate under test, an XY scanning line for driving pixels, and a defect related thereto, comprising the steps of: The gate line scans at least the auxiliary capacitor of the pixel of interest and the adjacent pixel, or the auxiliary capacitor of the pixel on the pixel of interest and the adjacent scan line, and supplies a predetermined high voltage to the auxiliary capacitor of the pixel of interest or the pixel on the scan line of interest through the video terminal. And charging the auxiliary capacitor of an adjacent pixel or a pixel on an adjacent scanning line with a different predetermined voltage or zero voltage; and setting a charge on a signal path leading to the video terminal and a data line for column scanning to zero. A charge erasing step for erasing, and assisting at least a pixel of interest and an adjacent pixel through the video terminal. A discharge readout step of sequentially measuring the charges charged in the capacitor; and a determination processing step of determining a pixel defect between adjacent pixels and a defect on an adjacent scanning line from a deviation of the obtained measurement result, LCD board inspection method.
【請求項3】 画素の補助コンデンサを充電走査する充
電ステップから、補助コンデンサに充電された電荷を読
出し走査をする放電読出しステップ間を、所定複数回繰
返して放電電流データを累積加算することを特徴とした
請求項1又は2記載のLCD基板検査方法。
3. The method according to claim 1, further comprising: repeating a predetermined number of times from a charging step of charging and scanning the auxiliary capacitor of the pixel to a discharge reading step of reading and scanning the charge stored in the auxiliary capacitor, and cumulatively adding the discharge current data. 3. The method for inspecting an LCD substrate according to claim 1, wherein:
JP25377497A 1997-09-18 1997-09-18 Method for inspecting lcd substrate Withdrawn JPH1195250A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25377497A JPH1195250A (en) 1997-09-18 1997-09-18 Method for inspecting lcd substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25377497A JPH1195250A (en) 1997-09-18 1997-09-18 Method for inspecting lcd substrate

Publications (1)

Publication Number Publication Date
JPH1195250A true JPH1195250A (en) 1999-04-09

Family

ID=17255966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25377497A Withdrawn JPH1195250A (en) 1997-09-18 1997-09-18 Method for inspecting lcd substrate

Country Status (1)

Country Link
JP (1) JPH1195250A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100970366B1 (en) 2003-02-14 2010-07-16 윈테스트 가부시키가이샤 Inspection method and inspection device for active matrix substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100970366B1 (en) 2003-02-14 2010-07-16 윈테스트 가부시키가이샤 Inspection method and inspection device for active matrix substrate

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