JPH1187733A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法

Info

Publication number
JPH1187733A
JPH1187733A JP9268156A JP26815697A JPH1187733A JP H1187733 A JPH1187733 A JP H1187733A JP 9268156 A JP9268156 A JP 9268156A JP 26815697 A JP26815697 A JP 26815697A JP H1187733 A JPH1187733 A JP H1187733A
Authority
JP
Japan
Prior art keywords
film
region
semiconductor film
heat treatment
gettering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP9268156A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1187733A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP9268156A priority Critical patent/JPH1187733A/ja
Publication of JPH1187733A publication Critical patent/JPH1187733A/ja
Publication of JPH1187733A5 publication Critical patent/JPH1187733A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP9268156A 1997-09-11 1997-09-11 半導体装置の作製方法 Withdrawn JPH1187733A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9268156A JPH1187733A (ja) 1997-09-11 1997-09-11 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9268156A JPH1187733A (ja) 1997-09-11 1997-09-11 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JPH1187733A true JPH1187733A (ja) 1999-03-30
JPH1187733A5 JPH1187733A5 (enExample) 2005-06-02

Family

ID=17454687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9268156A Withdrawn JPH1187733A (ja) 1997-09-11 1997-09-11 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JPH1187733A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001048797A1 (fr) * 1999-12-28 2001-07-05 Semiconductor Energy Laboratory Co., Ltd. Procede de fabrication d'un dispositif semiconducteur
US6274888B1 (en) 1999-01-11 2001-08-14 Hitachi, Ltd Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them
JP2007081327A (ja) * 2005-09-16 2007-03-29 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2012058742A (ja) * 1999-04-27 2012-03-22 Semiconductor Energy Lab Co Ltd Ｅｌ表示装置
US8144484B2 (en) 2003-05-27 2012-03-27 Power Integrations, Inc. Electronic circuit control element with tap element

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6274888B1 (en) 1999-01-11 2001-08-14 Hitachi, Ltd Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them
US6965122B2 (en) 1999-01-11 2005-11-15 Hitachi, Ltd. Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them
US7297982B2 (en) 1999-01-11 2007-11-20 Hitachi, Ltd. Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them
JP2012058742A (ja) * 1999-04-27 2012-03-22 Semiconductor Energy Lab Co Ltd Ｅｌ表示装置
US9837451B2 (en) 1999-04-27 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic apparatus
US9293483B2 (en) 1999-04-27 2016-03-22 Semiconductor Energy Laboratory Co. Ltd. Electronic device and electronic apparatus
US8994711B2 (en) 1999-04-27 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic apparatus
US6821827B2 (en) 1999-12-28 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7384860B2 (en) 1999-12-28 2008-06-10 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
WO2001048797A1 (fr) * 1999-12-28 2001-07-05 Semiconductor Energy Laboratory Co., Ltd. Procede de fabrication d'un dispositif semiconducteur
US6787407B2 (en) 1999-12-28 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US8144484B2 (en) 2003-05-27 2012-03-27 Power Integrations, Inc. Electronic circuit control element with tap element
JP2007081327A (ja) * 2005-09-16 2007-03-29 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

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