JPH11514498A - 埋め込み接点ソーラセルのメタライゼーション - Google Patents
埋め込み接点ソーラセルのメタライゼーションInfo
- Publication number
- JPH11514498A JPH11514498A JP9515350A JP51535097A JPH11514498A JP H11514498 A JPH11514498 A JP H11514498A JP 9515350 A JP9515350 A JP 9515350A JP 51535097 A JP51535097 A JP 51535097A JP H11514498 A JPH11514498 A JP H11514498A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- groove
- dopant
- grooves
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000001465 metallisation Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims description 153
- 239000011248 coating agent Substances 0.000 claims description 41
- 238000000576 coating method Methods 0.000 claims description 41
- 239000002019 doping agent Substances 0.000 claims description 41
- 238000012545 processing Methods 0.000 claims description 23
- 239000002904 solvent Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000007865 diluting Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 238000005507 spraying Methods 0.000 claims description 6
- 238000007737 ion beam deposition Methods 0.000 claims description 5
- 238000001771 vacuum deposition Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000005234 chemical deposition Methods 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
- 239000010703 silicon Substances 0.000 abstract description 14
- 239000000126 substance Substances 0.000 abstract description 7
- 239000006117 anti-reflective coating Substances 0.000 abstract description 4
- 239000003989 dielectric material Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000000873 masking effect Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- 238000013459 approach Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000004408 titanium dioxide Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- -1 phosphorus compound Chemical class 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 206010055670 Necrotising ulcerative gingivostomatitis Diseases 0.000 description 1
- 208000006595 Necrotizing Ulcerative Gingivitis Diseases 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AUPN6063A AUPN606395A0 (en) | 1995-10-19 | 1995-10-19 | Metallization of buried contact solar cells |
| PCT/AU1996/000647 WO1997015075A1 (en) | 1995-10-19 | 1996-10-14 | Metallization of buried contact solar cells |
| AU6063 | 1999-07-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11514498A true JPH11514498A (ja) | 1999-12-07 |
Family
ID=3790390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9515350A Ceased JPH11514498A (ja) | 1995-10-19 | 1996-10-14 | 埋め込み接点ソーラセルのメタライゼーション |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0958597A1 (enrdf_load_stackoverflow) |
| JP (1) | JPH11514498A (enrdf_load_stackoverflow) |
| AU (1) | AUPN606395A0 (enrdf_load_stackoverflow) |
| WO (1) | WO1997015075A1 (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006024757A (ja) * | 2004-07-08 | 2006-01-26 | Shin Etsu Handotai Co Ltd | 太陽電池および太陽電池の製造方法 |
| JP2006066802A (ja) * | 2004-08-30 | 2006-03-09 | Shin Etsu Handotai Co Ltd | 太陽電池の製造方法および太陽電池 |
| JP2008517451A (ja) * | 2004-10-14 | 2008-05-22 | インスティトゥート フューア ゾラールエネルギーフォルシュング ゲーエムベーハー | 背面接触式太陽電池上の導電層の接触分離の方法および太陽電池 |
| JP2010278441A (ja) * | 2009-05-26 | 2010-12-09 | Korea Iron & Steel Co Ltd | 集積型薄膜太陽電池及びその製造方法 |
| JP2011518439A (ja) * | 2008-04-18 | 2011-06-23 | １３６６ テクノロジーズ インク． | ソーラーセルの拡散層をパターニングする方法及び当該方法によって作成されたソーラーセル |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10103114A1 (de) * | 2001-01-24 | 2002-10-31 | Univ Stuttgart | Herstellen elektrischer Verbindungen in Substratöffnungen von Schaltungseinheiten mittels gerichteter Abscheidung leitfähiger Schichten |
| WO2011073971A2 (en) * | 2009-12-16 | 2011-06-23 | Shenkar College Of Engineering And Design | Photovoltaic device and method of its fabrication |
| US8975170B2 (en) | 2011-10-24 | 2015-03-10 | Honeywell International Inc. | Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU570309B2 (en) * | 1984-03-26 | 1988-03-10 | Unisearch Limited | Buried contact solar cell |
| US4549927A (en) * | 1984-06-29 | 1985-10-29 | International Business Machines Corporation | Method of selectively exposing the sidewalls of a trench and its use to the forming of a metal silicide substrate contact for dielectric filled deep trench isolated devices |
-
1995
- 1995-10-19 AU AUPN6063A patent/AUPN606395A0/en not_active Abandoned
-
1996
- 1996-10-14 EP EP96933268A patent/EP0958597A1/en not_active Withdrawn
- 1996-10-14 JP JP9515350A patent/JPH11514498A/ja not_active Ceased
- 1996-10-14 WO PCT/AU1996/000647 patent/WO1997015075A1/en not_active Application Discontinuation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006024757A (ja) * | 2004-07-08 | 2006-01-26 | Shin Etsu Handotai Co Ltd | 太陽電池および太陽電池の製造方法 |
| JP2006066802A (ja) * | 2004-08-30 | 2006-03-09 | Shin Etsu Handotai Co Ltd | 太陽電池の製造方法および太陽電池 |
| JP2008517451A (ja) * | 2004-10-14 | 2008-05-22 | インスティトゥート フューア ゾラールエネルギーフォルシュング ゲーエムベーハー | 背面接触式太陽電池上の導電層の接触分離の方法および太陽電池 |
| JP2011518439A (ja) * | 2008-04-18 | 2011-06-23 | １３６６ テクノロジーズ インク． | ソーラーセルの拡散層をパターニングする方法及び当該方法によって作成されたソーラーセル |
| JP2010278441A (ja) * | 2009-05-26 | 2010-12-09 | Korea Iron & Steel Co Ltd | 集積型薄膜太陽電池及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0958597A1 (en) | 1999-11-24 |
| WO1997015075A1 (en) | 1997-04-24 |
| EP0958597A4 (enrdf_load_stackoverflow) | 1999-11-24 |
| AUPN606395A0 (en) | 1995-11-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070703 |
|
| A313 | Final decision of rejection without a dissenting response from the applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A313 Effective date: 20071121 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080108 |