AUPN606395A0 - Metallization of buried contact solar cells - Google Patents

Metallization of buried contact solar cells

Info

Publication number
AUPN606395A0
AUPN606395A0 AUPN6063A AUPN606395A AUPN606395A0 AU PN606395 A0 AUPN606395 A0 AU PN606395A0 AU PN6063 A AUPN6063 A AU PN6063A AU PN606395 A AUPN606395 A AU PN606395A AU PN606395 A0 AUPN606395 A0 AU PN606395A0
Authority
AU
Australia
Prior art keywords
metallization
solar cells
contact solar
buried contact
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AUPN6063A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisearch Ltd
Original Assignee
Unisearch Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisearch Ltd filed Critical Unisearch Ltd
Priority to AUPN6063A priority Critical patent/AUPN606395A0/en
Publication of AUPN606395A0 publication Critical patent/AUPN606395A0/en
Priority to EP96933268A priority patent/EP0958597A1/en
Priority to JP9515350A priority patent/JPH11514498A/ja
Priority to PCT/AU1996/000647 priority patent/WO1997015075A1/en
Priority to AU72067/96A priority patent/AU699936B2/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
AUPN6063A 1995-10-19 1995-10-19 Metallization of buried contact solar cells Abandoned AUPN606395A0 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
AUPN6063A AUPN606395A0 (en) 1995-10-19 1995-10-19 Metallization of buried contact solar cells
EP96933268A EP0958597A1 (en) 1995-10-19 1996-10-14 Metallization of buried contact solar cells
JP9515350A JPH11514498A (ja) 1995-10-19 1996-10-14 埋め込み接点ソーラセルのメタライゼーション
PCT/AU1996/000647 WO1997015075A1 (en) 1995-10-19 1996-10-14 Metallization of buried contact solar cells
AU72067/96A AU699936B2 (en) 1995-10-19 1996-10-14 Metallization of buried contact solar cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AUPN6063A AUPN606395A0 (en) 1995-10-19 1995-10-19 Metallization of buried contact solar cells

Publications (1)

Publication Number Publication Date
AUPN606395A0 true AUPN606395A0 (en) 1995-11-09

Family

ID=3790390

Family Applications (1)

Application Number Title Priority Date Filing Date
AUPN6063A Abandoned AUPN606395A0 (en) 1995-10-19 1995-10-19 Metallization of buried contact solar cells

Country Status (4)

Country Link
EP (1) EP0958597A1 (enrdf_load_stackoverflow)
JP (1) JPH11514498A (enrdf_load_stackoverflow)
AU (1) AUPN606395A0 (enrdf_load_stackoverflow)
WO (1) WO1997015075A1 (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10103114A1 (de) * 2001-01-24 2002-10-31 Univ Stuttgart Herstellen elektrischer Verbindungen in Substratöffnungen von Schaltungseinheiten mittels gerichteter Abscheidung leitfähiger Schichten
JP2006024757A (ja) * 2004-07-08 2006-01-26 Shin Etsu Handotai Co Ltd 太陽電池および太陽電池の製造方法
JP2006066802A (ja) * 2004-08-30 2006-03-09 Shin Etsu Handotai Co Ltd 太陽電池の製造方法および太陽電池
DE102004050269A1 (de) * 2004-10-14 2006-04-20 Institut Für Solarenergieforschung Gmbh Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle
KR101503861B1 (ko) * 2008-04-18 2015-03-18 1366 테크놀로지 인코포레이티드 태양 전지 내 확산층의 패턴화 방법 및 이러한 방법에 의해 제조된 태양 전지
KR101028971B1 (ko) * 2009-05-26 2011-04-19 한국과학기술원 집적형 박막 태양전지 및 그의 제조 방법
WO2011073971A2 (en) * 2009-12-16 2011-06-23 Shenkar College Of Engineering And Design Photovoltaic device and method of its fabrication
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU570309B2 (en) * 1984-03-26 1988-03-10 Unisearch Limited Buried contact solar cell
US4549927A (en) * 1984-06-29 1985-10-29 International Business Machines Corporation Method of selectively exposing the sidewalls of a trench and its use to the forming of a metal silicide substrate contact for dielectric filled deep trench isolated devices

Also Published As

Publication number Publication date
EP0958597A1 (en) 1999-11-24
WO1997015075A1 (en) 1997-04-24
EP0958597A4 (enrdf_load_stackoverflow) 1999-11-24
JPH11514498A (ja) 1999-12-07

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