JPH11509685A5 - - Google Patents
Info
- Publication number
- JPH11509685A5 JPH11509685A5 JP1997505222A JP50522297A JPH11509685A5 JP H11509685 A5 JPH11509685 A5 JP H11509685A5 JP 1997505222 A JP1997505222 A JP 1997505222A JP 50522297 A JP50522297 A JP 50522297A JP H11509685 A5 JPH11509685 A5 JP H11509685A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/497,461 US5738756A (en) | 1995-06-30 | 1995-06-30 | Method and apparatus for detecting optimal endpoints in plasma etch processes |
| US08/497,461 | 1995-06-30 | ||
| PCT/US1996/011016 WO1997002593A1 (en) | 1995-06-30 | 1996-06-28 | An improved method and apparatus for detecting optimal endpoints in plasma etch processes |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11509685A JPH11509685A (ja) | 1999-08-24 |
| JPH11509685A5 true JPH11509685A5 (enExample) | 2004-08-05 |
| JP3977423B2 JP3977423B2 (ja) | 2007-09-19 |
Family
ID=23976981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50522297A Expired - Lifetime JP3977423B2 (ja) | 1995-06-30 | 1996-06-28 | プラズマエッチングにおける最適終結点検出方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US5738756A (enExample) |
| EP (1) | EP0836745A1 (enExample) |
| JP (1) | JP3977423B2 (enExample) |
| KR (1) | KR100454348B1 (enExample) |
| AU (1) | AU6342196A (enExample) |
| WO (1) | WO1997002593A1 (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5738756A (en) * | 1995-06-30 | 1998-04-14 | Lam Research Corporation | Method and apparatus for detecting optimal endpoints in plasma etch processes |
| US5958258A (en) * | 1997-08-04 | 1999-09-28 | Tokyo Electron Yamanashi Limited | Plasma processing method in semiconductor processing system |
| US6024831A (en) * | 1997-08-20 | 2000-02-15 | Vanguard International Semiconductor Corporation | Method and apparatus for monitoring plasma chamber condition by observing plasma stability |
| US6153115A (en) * | 1997-10-23 | 2000-11-28 | Massachusetts Institute Of Technology | Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra |
| KR100257811B1 (ko) * | 1997-10-24 | 2000-06-01 | 구본준 | 액정표시장치의 기판의 제조방법 |
| US6390019B1 (en) | 1998-06-11 | 2002-05-21 | Applied Materials, Inc. | Chamber having improved process monitoring window |
| JP3383236B2 (ja) * | 1998-12-01 | 2003-03-04 | 株式会社日立製作所 | エッチング終点判定方法及びエッチング終点判定装置 |
| JP3116949B2 (ja) * | 1999-01-22 | 2000-12-11 | 日本電気株式会社 | 加工プロセス終了点実時間判定方法 |
| TW501199B (en) * | 1999-03-05 | 2002-09-01 | Applied Materials Inc | Method for enhancing etching of TiSix |
| US20040035529A1 (en) * | 1999-08-24 | 2004-02-26 | Michael N. Grimbergen | Monitoring a process and compensating for radiation source fluctuations |
| US6413867B1 (en) | 1999-12-23 | 2002-07-02 | Applied Materials, Inc. | Film thickness control using spectral interferometry |
| TW524888B (en) * | 2000-02-01 | 2003-03-21 | Winbond Electronics Corp | Optical temperature measurement as an in-situ monitor of etch rate |
| ES2172402B1 (es) | 2000-05-30 | 2003-11-01 | Rodriguez Luis Angel Rejat | Perfeccionamientos en los proyectiles insecticidas. |
| KR20020001351A (ko) * | 2000-06-28 | 2002-01-09 | 황인길 | 플라스마 모니터 장치 |
| US6831742B1 (en) | 2000-10-23 | 2004-12-14 | Applied Materials, Inc | Monitoring substrate processing using reflected radiation |
| US6673199B1 (en) | 2001-03-07 | 2004-01-06 | Applied Materials, Inc. | Shaping a plasma with a magnetic field to control etch rate uniformity |
| TWI240325B (en) * | 2002-06-12 | 2005-09-21 | Semi Sysco Co Ltd | Method for detecting an end point in a dry etching process |
| US7048837B2 (en) * | 2002-09-13 | 2006-05-23 | Applied Materials, Inc. | End point detection for sputtering and resputtering |
| TWI246725B (en) * | 2002-10-31 | 2006-01-01 | Tokyo Electron Ltd | Method and apparatus for detecting endpoint |
| US6780249B2 (en) * | 2002-12-06 | 2004-08-24 | Eastman Kodak Company | System for producing patterned deposition from compressed fluid in a partially opened deposition chamber |
| US20040108060A1 (en) * | 2002-12-06 | 2004-06-10 | Eastman Kodak Company | System for producing patterned deposition from compressed fluids |
| RU2248645C2 (ru) * | 2003-02-12 | 2005-03-20 | Физико-технологический институт РАН | Способ контроля момента окончания травления в плазме вч- и свч-разряда в технологии изготовления полупроводниковых приборов и устройство для его осуществления |
| US6969619B1 (en) * | 2003-02-18 | 2005-11-29 | Novellus Systems, Inc. | Full spectrum endpoint detection |
| RU2248646C2 (ru) * | 2003-05-06 | 2005-03-20 | Физико-технологический институт РАН | Способ контроля плазмохимических процессов травления дифференциальной оптической актинометрией и устройство для его осуществления |
| US20050042523A1 (en) * | 2003-08-20 | 2005-02-24 | Banqiu Wu | Endpoint detection of plasma-assisted etch process |
| JP4723871B2 (ja) * | 2004-06-23 | 2011-07-13 | 株式会社日立ハイテクノロジーズ | ドライエッチング装置 |
| CN101494160B (zh) * | 2008-01-22 | 2011-05-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种工艺终点控制方法和装置 |
| CN102163567B (zh) * | 2008-01-22 | 2012-10-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种工艺终点控制方法和装置 |
| CN102347197B (zh) * | 2011-10-31 | 2014-03-05 | 中微半导体设备(上海)有限公司 | 刻蚀终点动态检测方法 |
| US11398369B2 (en) * | 2019-06-25 | 2022-07-26 | Applied Materials, Inc. | Method and apparatus for actively tuning a plasma power source |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4816419A (en) * | 1983-08-01 | 1989-03-28 | University Of Health Sciences/The Chicago Medical School | Fluorescence ligand binding assay using charge-matched dye and solvent components |
| US4493745A (en) * | 1984-01-31 | 1985-01-15 | International Business Machines Corporation | Optical emission spectroscopy end point detection in plasma etching |
| US4491499A (en) * | 1984-03-29 | 1985-01-01 | At&T Technologies, Inc. | Optical emission end point detector |
| US4680084A (en) * | 1984-08-21 | 1987-07-14 | American Telephone And Telegraph Company, At&T Bell Laboratories | Interferometric methods and apparatus for device fabrication |
| JPS6153728A (ja) * | 1984-08-24 | 1986-03-17 | Hitachi Ltd | エツチング終点判定方法 |
| US4615761A (en) * | 1985-03-15 | 1986-10-07 | Hitachi, Ltd. | Method of and apparatus for detecting an end point of plasma treatment |
| US4936967A (en) * | 1987-01-05 | 1990-06-26 | Hitachi, Ltd. | Method of detecting an end point of plasma treatment |
| JPS63244847A (ja) * | 1987-03-31 | 1988-10-12 | Anelva Corp | ドライエッチング終点検出方法 |
| JP2564312B2 (ja) * | 1987-07-17 | 1996-12-18 | 株式会社日立製作所 | エッチング終点判定方法および装置 |
| US5014217A (en) * | 1989-02-09 | 1991-05-07 | S C Technology, Inc. | Apparatus and method for automatically identifying chemical species within a plasma reactor environment |
| US5160422A (en) * | 1989-05-29 | 1992-11-03 | Shimizu Co., Ltd. | Bath for immersion plating tin-lead alloys |
| US5118378A (en) * | 1989-10-10 | 1992-06-02 | Hitachi, Ltd. | Apparatus for detecting an end point of etching |
| US5097430A (en) * | 1990-01-16 | 1992-03-17 | Applied Materials, Inc. | Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber |
| US5002631A (en) * | 1990-03-09 | 1991-03-26 | At&T Bell Laboratories | Plasma etching apparatus and method |
| US5208644A (en) * | 1990-05-18 | 1993-05-04 | Xinix, Inc. | Interference removal |
| US5160402A (en) * | 1990-05-24 | 1992-11-03 | Applied Materials, Inc. | Multi-channel plasma discharge endpoint detection method |
| US5190614A (en) * | 1990-09-05 | 1993-03-02 | Luxtron Corporation | Method of endpoint detection and structure therefor |
| JP2865455B2 (ja) * | 1991-07-29 | 1999-03-08 | 豊田工機株式会社 | 駆動力伝達装置 |
| JPH0594973A (ja) * | 1991-10-01 | 1993-04-16 | Tokyo Ohka Kogyo Co Ltd | エツチング終点判定方法 |
| JPH0770579B2 (ja) * | 1991-12-26 | 1995-07-31 | 株式会社芝浦製作所 | エッチング処理データ演算装置 |
| JPH05206074A (ja) * | 1992-01-28 | 1993-08-13 | Kokusai Electric Co Ltd | プラズマエッチング終点検出方法及びその装置 |
| WO1993025893A1 (en) * | 1992-06-09 | 1993-12-23 | Luxtron Corporation | Endpoint detection technique using signal slope determinations |
| JP3181388B2 (ja) * | 1992-07-15 | 2001-07-03 | 東京エレクトロン株式会社 | 観測信号の変動周期算出方法及びそれを用いたプラズマ装置 |
| JP3257829B2 (ja) * | 1992-07-31 | 2002-02-18 | 松下電器産業株式会社 | ドライエッチングの終点検出方法 |
| JP3166394B2 (ja) * | 1993-04-07 | 2001-05-14 | 松下電器産業株式会社 | ドライエッチングの終点検出方法と終点条件の自動決定方法 |
| US5405488A (en) * | 1993-09-13 | 1995-04-11 | Vlsi Technology, Inc. | System and method for plasma etching endpoint detection |
| US5738756A (en) * | 1995-06-30 | 1998-04-14 | Lam Research Corporation | Method and apparatus for detecting optimal endpoints in plasma etch processes |
-
1995
- 1995-06-30 US US08/497,461 patent/US5738756A/en not_active Expired - Lifetime
-
1996
- 1996-06-28 WO PCT/US1996/011016 patent/WO1997002593A1/en not_active Ceased
- 1996-06-28 EP EP96922605A patent/EP0836745A1/en not_active Withdrawn
- 1996-06-28 AU AU63421/96A patent/AU6342196A/en not_active Abandoned
- 1996-06-28 KR KR1019970709916A patent/KR100454348B1/ko not_active Expired - Lifetime
- 1996-06-28 JP JP50522297A patent/JP3977423B2/ja not_active Expired - Lifetime
-
1997
- 1997-10-27 US US08/958,611 patent/US6190927B1/en not_active Expired - Lifetime