JPH11509031A5 - - Google Patents

Info

Publication number
JPH11509031A5
JPH11509031A5 JP1997505171A JP50517197A JPH11509031A5 JP H11509031 A5 JPH11509031 A5 JP H11509031A5 JP 1997505171 A JP1997505171 A JP 1997505171A JP 50517197 A JP50517197 A JP 50517197A JP H11509031 A5 JPH11509031 A5 JP H11509031A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997505171A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11509031A (ja
Filing date
Publication date
Priority claimed from US08/491,342 external-priority patent/US5874704A/en
Application filed filed Critical
Publication of JPH11509031A publication Critical patent/JPH11509031A/ja
Publication of JPH11509031A5 publication Critical patent/JPH11509031A5/ja
Pending legal-status Critical Current

Links

JP9505171A 1995-06-30 1996-06-20 誘導結合プラズマ源用低インダクタンス大面積コイル Pending JPH11509031A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/491,342 1995-06-30
US08/491,342 US5874704A (en) 1995-06-30 1995-06-30 Low inductance large area coil for an inductively coupled plasma source
PCT/US1996/010804 WO1997002588A1 (en) 1995-06-30 1996-06-20 Low inductance large area coil for an inductively coupled plasma source

Publications (2)

Publication Number Publication Date
JPH11509031A JPH11509031A (ja) 1999-08-03
JPH11509031A5 true JPH11509031A5 (enExample) 2004-08-05

Family

ID=23951788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9505171A Pending JPH11509031A (ja) 1995-06-30 1996-06-20 誘導結合プラズマ源用低インダクタンス大面積コイル

Country Status (9)

Country Link
US (2) US5874704A (enExample)
EP (1) EP0835518B1 (enExample)
JP (1) JPH11509031A (enExample)
KR (1) KR100417327B1 (enExample)
CN (1) CN1106669C (enExample)
AT (1) ATE213869T1 (enExample)
AU (1) AU6289296A (enExample)
DE (1) DE69619525T2 (enExample)
WO (1) WO1997002588A1 (enExample)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5669975A (en) * 1996-03-27 1997-09-23 Sony Corporation Plasma producing method and apparatus including an inductively-coupled plasma source
US6395276B1 (en) 1997-05-02 2002-05-28 Immunomedics, Inc. Immunotoxins directed against malignant cells
US6653104B2 (en) 1996-10-17 2003-11-25 Immunomedics, Inc. Immunotoxins, comprising an internalizing antibody, directed against malignant and normal cells
US6210539B1 (en) 1997-05-14 2001-04-03 Applied Materials, Inc. Method and apparatus for producing a uniform density plasma above a substrate
US6361661B2 (en) 1997-05-16 2002-03-26 Applies Materials, Inc. Hybrid coil design for ionized deposition
US6652717B1 (en) 1997-05-16 2003-11-25 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6579426B1 (en) 1997-05-16 2003-06-17 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6077402A (en) * 1997-05-16 2000-06-20 Applied Materials, Inc. Central coil design for ionized metal plasma deposition
US6369348B2 (en) 1997-06-30 2002-04-09 Applied Materials, Inc Plasma reactor with coil antenna of plural helical conductors with equally spaced ends
US6345588B1 (en) 1997-08-07 2002-02-12 Applied Materials, Inc. Use of variable RF generator to control coil voltage distribution
US6076482A (en) * 1997-09-20 2000-06-20 Applied Materials, Inc. Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion
KR20010032824A (ko) * 1997-12-05 2001-04-25 테갈 코퍼레이션 증착 실드를 갖는 플라즈마 리액터
US6273022B1 (en) 1998-03-14 2001-08-14 Applied Materials, Inc. Distributed inductively-coupled plasma source
US6254738B1 (en) * 1998-03-31 2001-07-03 Applied Materials, Inc. Use of variable impedance having rotating core to control coil sputter distribution
US6146508A (en) * 1998-04-22 2000-11-14 Applied Materials, Inc. Sputtering method and apparatus with small diameter RF coil
US6390019B1 (en) 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
TW434636B (en) 1998-07-13 2001-05-16 Applied Komatsu Technology Inc RF matching network with distributed outputs
US6217718B1 (en) 1999-02-17 2001-04-17 Applied Materials, Inc. Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
US6474258B2 (en) 1999-03-26 2002-11-05 Tokyo Electron Limited Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
US6237526B1 (en) 1999-03-26 2001-05-29 Tokyo Electron Limited Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
US6229264B1 (en) 1999-03-31 2001-05-08 Lam Research Corporation Plasma processor with coil having variable rf coupling
KR100338057B1 (ko) * 1999-08-26 2002-05-24 황 철 주 유도 결합형 플라즈마 발생용 안테나 장치
EP1252359B1 (en) 1999-12-02 2020-03-11 OEM Group, Inc Method of operating a platinum etch reactor
US6440219B1 (en) * 2000-06-07 2002-08-27 Simplus Systems Corporation Replaceable shielding apparatus
US6685798B1 (en) 2000-07-06 2004-02-03 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6409933B1 (en) 2000-07-06 2002-06-25 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6694915B1 (en) 2000-07-06 2004-02-24 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6414648B1 (en) 2000-07-06 2002-07-02 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6462481B1 (en) 2000-07-06 2002-10-08 Applied Materials Inc. Plasma reactor having a symmetric parallel conductor coil antenna
TW511158B (en) * 2000-08-11 2002-11-21 Alps Electric Co Ltd Plasma processing apparatus and system, performance validation system thereof
US6494998B1 (en) 2000-08-30 2002-12-17 Tokyo Electron Limited Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
US6583572B2 (en) 2001-03-30 2003-06-24 Lam Research Corporation Inductive plasma processor including current sensor for plasma excitation coil
US6527912B2 (en) * 2001-03-30 2003-03-04 Lam Research Corporation Stacked RF excitation coil for inductive plasma processor
US7096819B2 (en) * 2001-03-30 2006-08-29 Lam Research Corporation Inductive plasma processor having coil with plural windings and method of controlling plasma density
EP1417691B1 (en) * 2001-08-09 2009-12-16 Nxp B.V. Planar inductive component and a planar transformer
US7571697B2 (en) * 2001-09-14 2009-08-11 Lam Research Corporation Plasma processor coil
US6933801B2 (en) 2001-10-26 2005-08-23 Applied Materials, Inc. Distributed load transmission line matching network
JP3820188B2 (ja) 2002-06-19 2006-09-13 三菱重工業株式会社 プラズマ処理装置及びプラズマ処理方法
JP2005063760A (ja) * 2003-08-08 2005-03-10 Sekisui Chem Co Ltd プラズマ処理方法および処理装置
KR100710923B1 (ko) * 2004-06-02 2007-04-23 동경 엘렉트론 주식회사 플라즈마 처리장치 및 임피던스 조정방법
JP4526540B2 (ja) * 2004-12-28 2010-08-18 株式会社日立国際電気 基板処理装置および基板処理方法
CN100437844C (zh) * 2005-12-05 2008-11-26 北京北方微电子基地设备工艺研究中心有限责任公司 电感耦合线圈
US7626135B2 (en) * 2006-05-10 2009-12-01 Sub-One Technology, Inc. Electrode systems and methods of using electrodes
TWI354302B (en) * 2006-05-26 2011-12-11 Delta Electronics Inc Transformer
TW200830941A (en) * 2007-01-15 2008-07-16 Jehara Corp Plasma generating apparatus
US20090000738A1 (en) * 2007-06-29 2009-01-01 Neil Benjamin Arrays of inductive elements for minimizing radial non-uniformity in plasma
JP5137675B2 (ja) * 2008-04-28 2013-02-06 三菱電機株式会社 誘導加熱調理器
JP4752879B2 (ja) * 2008-07-04 2011-08-17 パナソニック電工株式会社 平面コイル
JP5757710B2 (ja) * 2009-10-27 2015-07-29 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
PL2502255T3 (pl) 2009-11-20 2014-09-30 Oerlikon Trading Ag System cewek częściowych do symulacji cewek kołowych do urządzeń próżniowych
KR101287834B1 (ko) * 2009-12-21 2013-07-19 한국전자통신연구원 자기공명을 이용한 에너지 공급 장치, 조리 장치 및 방법
SI23611A (sl) 2011-01-20 2012-07-31 Institut@@quot@JoĹľef@Stefan@quot Metoda in naprava za vzbujanje visokofrekvenčne plinske plazme
DE102012109461A1 (de) * 2012-10-04 2014-06-12 PAC Plasma Applications Consulting GmbH & Co. KG Selbsttragende Spuleneinheit für eine Plasmaquelle, Verfahren zur Herstellung einer solchen Spuleneinheit und entsprechende Plasmaquelle
US20150077208A1 (en) * 2013-09-16 2015-03-19 Ken Goldman High-q parallel-trace planar spiral coil for biomedical implants
US9497846B2 (en) * 2013-10-24 2016-11-15 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Plasma generator using spiral conductors
US10193228B2 (en) 2013-10-24 2019-01-29 The United States Of America As Represented By The Administrator Of Nasa Antenna for near field sensing and far field transceiving
US10180341B2 (en) 2013-10-24 2019-01-15 The United States Of America As Represented By The Administrator Of Nasa Multi-layer wireless sensor construct for use at electrically-conductive material surfaces
US9736920B2 (en) * 2015-02-06 2017-08-15 Mks Instruments, Inc. Apparatus and method for plasma ignition with a self-resonating device
US9484084B2 (en) 2015-02-13 2016-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Pulling devices for driving data lines
US10971333B2 (en) 2016-10-24 2021-04-06 Samsung Electronics Co., Ltd. Antennas, circuits for generating plasma, plasma processing apparatus, and methods of manufacturing semiconductor devices using the same
US12074390B2 (en) 2022-11-11 2024-08-27 Tokyo Electron Limited Parallel resonance antenna for radial plasma control

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340462A (en) * 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
US4617079A (en) * 1985-04-12 1986-10-14 The Perkin Elmer Corporation Plasma etching system
US4612077A (en) * 1985-07-29 1986-09-16 The Perkin-Elmer Corporation Electrode for plasma etching system
JPS6457600A (en) * 1987-08-27 1989-03-03 Mitsubishi Electric Corp Plasma generating device
GB8905073D0 (en) * 1989-03-06 1989-04-19 Nordiko Ltd Ion gun
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5304279A (en) * 1990-08-10 1994-04-19 International Business Machines Corporation Radio frequency induction/multipole plasma processing tool
JPH04362091A (ja) 1991-06-05 1992-12-15 Mitsubishi Heavy Ind Ltd プラズマ化学気相成長装置
US5234529A (en) * 1991-10-10 1993-08-10 Johnson Wayne L Plasma generating apparatus employing capacitive shielding and process for using such apparatus
US5241245A (en) * 1992-05-06 1993-08-31 International Business Machines Corporation Optimized helical resonator for plasma processing
US5226967A (en) * 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
US5346578A (en) * 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source
KR100238627B1 (ko) * 1993-01-12 2000-01-15 히가시 데쓰로 플라즈마 처리장치
TW249313B (enExample) * 1993-03-06 1995-06-11 Tokyo Electron Co
US5401350A (en) * 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
JP3173693B2 (ja) * 1993-10-04 2001-06-04 東京エレクトロン株式会社 プラズマ処理装置及びその方法
US5540824A (en) * 1994-07-18 1996-07-30 Applied Materials Plasma reactor with multi-section RF coil and isolated conducting lid
JP2956487B2 (ja) * 1994-09-09 1999-10-04 住友金属工業株式会社 プラズマ生成装置
ATE181637T1 (de) * 1994-10-31 1999-07-15 Applied Materials Inc Plasmareaktoren zur halbleiterscheibenbehandlung
JP3318638B2 (ja) * 1994-11-17 2002-08-26 ソニー株式会社 プラズマエッチング・ｃｖｄ装置
US5688357A (en) * 1995-02-15 1997-11-18 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor

Similar Documents

Publication Publication Date Title
JP2000500033A5 (enExample)
JP2000500445A5 (enExample)
JP2000500440A5 (enExample)
JP2000500327A5 (enExample)
JP2000500145A5 (enExample)
JP2000500155A5 (enExample)
JPH11507258A5 (enExample)
JP2000500406A5 (enExample)
JP2000500361A5 (enExample)
JPH11509031A5 (enExample)
JP2000500115A5 (enExample)
JP2000501752A5 (enExample)
JP2000500322A5 (enExample)
JP2000500258A5 (enExample)
JP2000500342A5 (enExample)
JP2000500112A5 (enExample)
JP2000500696A5 (enExample)
JP2000500051A5 (enExample)
JP2000500407A5 (enExample)
JP2000500397A5 (enExample)
JP2000500019A5 (enExample)
JPH11509255A5 (enExample)
JP2000500125A5 (enExample)
JP2000500346A5 (enExample)
JP2000500044A5 (enExample)