KR100417327B1 - 진공플라즈마프로세서 - Google Patents

진공플라즈마프로세서 Download PDF

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Publication number
KR100417327B1
KR100417327B1 KR1019970709715A KR19970709715A KR100417327B1 KR 100417327 B1 KR100417327 B1 KR 100417327B1 KR 1019970709715 A KR1019970709715 A KR 1019970709715A KR 19970709715 A KR19970709715 A KR 19970709715A KR 100417327 B1 KR100417327 B1 KR 100417327B1
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KR
South Korea
Prior art keywords
windings
coil
vacuum plasma
plasma processor
lilac
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Expired - Lifetime
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KR1019970709715A
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English (en)
Korean (ko)
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KR19990028399A (ko
Inventor
듀앤 찰스 게이츠
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램 리서치 코포레이션
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1019970709715A 1995-06-30 1996-06-20 진공플라즈마프로세서 Expired - Lifetime KR100417327B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8/491,342 1995-06-30
US08/491,342 1995-06-30
US08/491,342 US5874704A (en) 1995-06-30 1995-06-30 Low inductance large area coil for an inductively coupled plasma source

Publications (2)

Publication Number Publication Date
KR19990028399A KR19990028399A (ko) 1999-04-15
KR100417327B1 true KR100417327B1 (ko) 2004-03-31

Family

ID=23951788

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970709715A Expired - Lifetime KR100417327B1 (ko) 1995-06-30 1996-06-20 진공플라즈마프로세서

Country Status (9)

Country Link
US (2) US5874704A (enExample)
EP (1) EP0835518B1 (enExample)
JP (1) JPH11509031A (enExample)
KR (1) KR100417327B1 (enExample)
CN (1) CN1106669C (enExample)
AT (1) ATE213869T1 (enExample)
AU (1) AU6289296A (enExample)
DE (1) DE69619525T2 (enExample)
WO (1) WO1997002588A1 (enExample)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5669975A (en) * 1996-03-27 1997-09-23 Sony Corporation Plasma producing method and apparatus including an inductively-coupled plasma source
US6395276B1 (en) 1997-05-02 2002-05-28 Immunomedics, Inc. Immunotoxins directed against malignant cells
US6653104B2 (en) 1996-10-17 2003-11-25 Immunomedics, Inc. Immunotoxins, comprising an internalizing antibody, directed against malignant and normal cells
US6210539B1 (en) 1997-05-14 2001-04-03 Applied Materials, Inc. Method and apparatus for producing a uniform density plasma above a substrate
US6361661B2 (en) 1997-05-16 2002-03-26 Applies Materials, Inc. Hybrid coil design for ionized deposition
US6652717B1 (en) 1997-05-16 2003-11-25 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6579426B1 (en) 1997-05-16 2003-06-17 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6077402A (en) * 1997-05-16 2000-06-20 Applied Materials, Inc. Central coil design for ionized metal plasma deposition
US6369348B2 (en) 1997-06-30 2002-04-09 Applied Materials, Inc Plasma reactor with coil antenna of plural helical conductors with equally spaced ends
US6345588B1 (en) 1997-08-07 2002-02-12 Applied Materials, Inc. Use of variable RF generator to control coil voltage distribution
US6076482A (en) * 1997-09-20 2000-06-20 Applied Materials, Inc. Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion
KR20010032824A (ko) * 1997-12-05 2001-04-25 테갈 코퍼레이션 증착 실드를 갖는 플라즈마 리액터
US6273022B1 (en) 1998-03-14 2001-08-14 Applied Materials, Inc. Distributed inductively-coupled plasma source
US6254738B1 (en) * 1998-03-31 2001-07-03 Applied Materials, Inc. Use of variable impedance having rotating core to control coil sputter distribution
US6146508A (en) * 1998-04-22 2000-11-14 Applied Materials, Inc. Sputtering method and apparatus with small diameter RF coil
US6390019B1 (en) 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
TW434636B (en) 1998-07-13 2001-05-16 Applied Komatsu Technology Inc RF matching network with distributed outputs
US6217718B1 (en) 1999-02-17 2001-04-17 Applied Materials, Inc. Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
US6474258B2 (en) 1999-03-26 2002-11-05 Tokyo Electron Limited Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
US6237526B1 (en) 1999-03-26 2001-05-29 Tokyo Electron Limited Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
US6229264B1 (en) 1999-03-31 2001-05-08 Lam Research Corporation Plasma processor with coil having variable rf coupling
KR100338057B1 (ko) * 1999-08-26 2002-05-24 황 철 주 유도 결합형 플라즈마 발생용 안테나 장치
EP1252359B1 (en) 1999-12-02 2020-03-11 OEM Group, Inc Method of operating a platinum etch reactor
US6440219B1 (en) * 2000-06-07 2002-08-27 Simplus Systems Corporation Replaceable shielding apparatus
US6685798B1 (en) 2000-07-06 2004-02-03 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6409933B1 (en) 2000-07-06 2002-06-25 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6694915B1 (en) 2000-07-06 2004-02-24 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6414648B1 (en) 2000-07-06 2002-07-02 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6462481B1 (en) 2000-07-06 2002-10-08 Applied Materials Inc. Plasma reactor having a symmetric parallel conductor coil antenna
TW511158B (en) * 2000-08-11 2002-11-21 Alps Electric Co Ltd Plasma processing apparatus and system, performance validation system thereof
US6494998B1 (en) 2000-08-30 2002-12-17 Tokyo Electron Limited Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
US6583572B2 (en) 2001-03-30 2003-06-24 Lam Research Corporation Inductive plasma processor including current sensor for plasma excitation coil
US6527912B2 (en) * 2001-03-30 2003-03-04 Lam Research Corporation Stacked RF excitation coil for inductive plasma processor
US7096819B2 (en) * 2001-03-30 2006-08-29 Lam Research Corporation Inductive plasma processor having coil with plural windings and method of controlling plasma density
EP1417691B1 (en) * 2001-08-09 2009-12-16 Nxp B.V. Planar inductive component and a planar transformer
US7571697B2 (en) * 2001-09-14 2009-08-11 Lam Research Corporation Plasma processor coil
US6933801B2 (en) 2001-10-26 2005-08-23 Applied Materials, Inc. Distributed load transmission line matching network
JP3820188B2 (ja) 2002-06-19 2006-09-13 三菱重工業株式会社 プラズマ処理装置及びプラズマ処理方法
JP2005063760A (ja) * 2003-08-08 2005-03-10 Sekisui Chem Co Ltd プラズマ処理方法および処理装置
KR100710923B1 (ko) * 2004-06-02 2007-04-23 동경 엘렉트론 주식회사 플라즈마 처리장치 및 임피던스 조정방법
JP4526540B2 (ja) * 2004-12-28 2010-08-18 株式会社日立国際電気 基板処理装置および基板処理方法
CN100437844C (zh) * 2005-12-05 2008-11-26 北京北方微电子基地设备工艺研究中心有限责任公司 电感耦合线圈
US7626135B2 (en) * 2006-05-10 2009-12-01 Sub-One Technology, Inc. Electrode systems and methods of using electrodes
TWI354302B (en) * 2006-05-26 2011-12-11 Delta Electronics Inc Transformer
TW200830941A (en) * 2007-01-15 2008-07-16 Jehara Corp Plasma generating apparatus
US20090000738A1 (en) * 2007-06-29 2009-01-01 Neil Benjamin Arrays of inductive elements for minimizing radial non-uniformity in plasma
JP5137675B2 (ja) * 2008-04-28 2013-02-06 三菱電機株式会社 誘導加熱調理器
JP4752879B2 (ja) * 2008-07-04 2011-08-17 パナソニック電工株式会社 平面コイル
JP5757710B2 (ja) * 2009-10-27 2015-07-29 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
PL2502255T3 (pl) 2009-11-20 2014-09-30 Oerlikon Trading Ag System cewek częściowych do symulacji cewek kołowych do urządzeń próżniowych
KR101287834B1 (ko) * 2009-12-21 2013-07-19 한국전자통신연구원 자기공명을 이용한 에너지 공급 장치, 조리 장치 및 방법
SI23611A (sl) 2011-01-20 2012-07-31 Institut@@quot@JoĹľef@Stefan@quot Metoda in naprava za vzbujanje visokofrekvenčne plinske plazme
DE102012109461A1 (de) * 2012-10-04 2014-06-12 PAC Plasma Applications Consulting GmbH & Co. KG Selbsttragende Spuleneinheit für eine Plasmaquelle, Verfahren zur Herstellung einer solchen Spuleneinheit und entsprechende Plasmaquelle
US20150077208A1 (en) * 2013-09-16 2015-03-19 Ken Goldman High-q parallel-trace planar spiral coil for biomedical implants
US9497846B2 (en) * 2013-10-24 2016-11-15 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Plasma generator using spiral conductors
US10193228B2 (en) 2013-10-24 2019-01-29 The United States Of America As Represented By The Administrator Of Nasa Antenna for near field sensing and far field transceiving
US10180341B2 (en) 2013-10-24 2019-01-15 The United States Of America As Represented By The Administrator Of Nasa Multi-layer wireless sensor construct for use at electrically-conductive material surfaces
US9736920B2 (en) * 2015-02-06 2017-08-15 Mks Instruments, Inc. Apparatus and method for plasma ignition with a self-resonating device
US9484084B2 (en) 2015-02-13 2016-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Pulling devices for driving data lines
US10971333B2 (en) 2016-10-24 2021-04-06 Samsung Electronics Co., Ltd. Antennas, circuits for generating plasma, plasma processing apparatus, and methods of manufacturing semiconductor devices using the same
US12074390B2 (en) 2022-11-11 2024-08-27 Tokyo Electron Limited Parallel resonance antenna for radial plasma control

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457600A (en) * 1987-08-27 1989-03-03 Mitsubishi Electric Corp Plasma generating device
JPH0379025A (ja) * 1989-08-14 1991-04-04 Lam Res Corp プラズマ処理装置、及び、蒸着或いはエッチングの方法
KR940022771A (ko) * 1993-03-06 1994-10-21 이노우에 아키라 플라즈마 처리장치
JPH07106316A (ja) * 1993-10-04 1995-04-21 Tokyo Electron Ltd プラズマ処理装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340462A (en) * 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
US4617079A (en) * 1985-04-12 1986-10-14 The Perkin Elmer Corporation Plasma etching system
US4612077A (en) * 1985-07-29 1986-09-16 The Perkin-Elmer Corporation Electrode for plasma etching system
GB8905073D0 (en) * 1989-03-06 1989-04-19 Nordiko Ltd Ion gun
US5304279A (en) * 1990-08-10 1994-04-19 International Business Machines Corporation Radio frequency induction/multipole plasma processing tool
JPH04362091A (ja) 1991-06-05 1992-12-15 Mitsubishi Heavy Ind Ltd プラズマ化学気相成長装置
US5234529A (en) * 1991-10-10 1993-08-10 Johnson Wayne L Plasma generating apparatus employing capacitive shielding and process for using such apparatus
US5241245A (en) * 1992-05-06 1993-08-31 International Business Machines Corporation Optimized helical resonator for plasma processing
US5226967A (en) * 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
US5346578A (en) * 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source
KR100238627B1 (ko) * 1993-01-12 2000-01-15 히가시 데쓰로 플라즈마 처리장치
US5401350A (en) * 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
US5540824A (en) * 1994-07-18 1996-07-30 Applied Materials Plasma reactor with multi-section RF coil and isolated conducting lid
JP2956487B2 (ja) * 1994-09-09 1999-10-04 住友金属工業株式会社 プラズマ生成装置
ATE181637T1 (de) * 1994-10-31 1999-07-15 Applied Materials Inc Plasmareaktoren zur halbleiterscheibenbehandlung
JP3318638B2 (ja) * 1994-11-17 2002-08-26 ソニー株式会社 プラズマエッチング・ｃｖｄ装置
US5688357A (en) * 1995-02-15 1997-11-18 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457600A (en) * 1987-08-27 1989-03-03 Mitsubishi Electric Corp Plasma generating device
JPH0379025A (ja) * 1989-08-14 1991-04-04 Lam Res Corp プラズマ処理装置、及び、蒸着或いはエッチングの方法
KR940022771A (ko) * 1993-03-06 1994-10-21 이노우에 아키라 플라즈마 처리장치
JPH07106316A (ja) * 1993-10-04 1995-04-21 Tokyo Electron Ltd プラズマ処理装置

Also Published As

Publication number Publication date
US5874704A (en) 1999-02-23
DE69619525T2 (de) 2002-08-08
CN1106669C (zh) 2003-04-23
US6184488B1 (en) 2001-02-06
DE69619525D1 (de) 2002-04-04
AU6289296A (en) 1997-02-05
JPH11509031A (ja) 1999-08-03
ATE213869T1 (de) 2002-03-15
KR19990028399A (ko) 1999-04-15
EP0835518B1 (en) 2002-02-27
CN1189240A (zh) 1998-07-29
EP0835518A1 (en) 1998-04-15
WO1997002588A1 (en) 1997-01-23

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