JPH11502342A - 低電力トリム回路、及びその方法 - Google Patents
低電力トリム回路、及びその方法Info
- Publication number
- JPH11502342A JPH11502342A JP8528375A JP52837596A JPH11502342A JP H11502342 A JPH11502342 A JP H11502342A JP 8528375 A JP8528375 A JP 8528375A JP 52837596 A JP52837596 A JP 52837596A JP H11502342 A JPH11502342 A JP H11502342A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- trim
- low power
- resistance
- node
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000009966 trimming Methods 0.000 claims abstract description 16
- 239000003990 capacitor Substances 0.000 claims abstract description 15
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 14
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000005516 engineering process Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910021357 chromium silicide Inorganic materials 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- -1 aluminum titanium-tungsten Chemical compound 0.000 description 2
- 238000000958 atom scattering Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Control Of Voltage And Current In General (AREA)
- Control Of Electrical Variables (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/407,101 US5563549A (en) | 1995-03-17 | 1995-03-17 | Low power trim circuit and method |
| US08/407,101 | 1995-03-17 | ||
| PCT/US1995/016833 WO1996029636A1 (en) | 1995-03-17 | 1995-12-20 | Low power trim circuit and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11502342A true JPH11502342A (ja) | 1999-02-23 |
Family
ID=23610592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8528375A Pending JPH11502342A (ja) | 1995-03-17 | 1995-12-20 | 低電力トリム回路、及びその方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5563549A (enExample) |
| EP (1) | EP0885413B1 (enExample) |
| JP (1) | JPH11502342A (enExample) |
| AU (1) | AU4473896A (enExample) |
| DE (1) | DE69525662D1 (enExample) |
| WO (1) | WO1996029636A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0146076B1 (ko) * | 1995-06-28 | 1998-08-01 | 문정환 | 반도체 소자의 기판 전압 레규레이터 장치 |
| EP0882258B1 (en) * | 1995-12-29 | 2000-07-26 | Advanced Micro Devices, Inc. | Reset circuit for a battery-powered integrated circuit and method of resetting such integrated circuit |
| US5686822A (en) * | 1996-04-30 | 1997-11-11 | Harris Corporation | Method of making a reference current generator |
| US6198339B1 (en) * | 1996-09-17 | 2001-03-06 | International Business Machines Corporation | CVF current reference with standby mode |
| US6108804A (en) * | 1997-09-11 | 2000-08-22 | Micron Technology, Inc. | Method and apparatus for testing adjustment of a circuit parameter |
| FR2780766B1 (fr) | 1998-07-01 | 2000-08-04 | Alm | Ensemble constitue d'une structure-porteuse et d'un chariot de transport de materiel |
| US6020785A (en) * | 1998-10-23 | 2000-02-01 | Maxim Integrated Products, Inc. | Fixed gain operational amplifiers |
| US6294631B1 (en) | 1998-12-15 | 2001-09-25 | Exxonmobil Chemical Patents Inc. | Hyperbranched polymers by coordination polymerization |
| US6388853B1 (en) * | 1999-09-28 | 2002-05-14 | Power Integrations, Inc. | Method and apparatus providing final test and trimming for a power supply controller |
| US6472897B1 (en) | 2000-01-24 | 2002-10-29 | Micro International Limited | Circuit and method for trimming integrated circuits |
| JP3889552B2 (ja) * | 2000-06-09 | 2007-03-07 | パイオニア株式会社 | 符号量割り当て装置および方法 |
| US6640435B2 (en) * | 2001-02-20 | 2003-11-04 | Power Integrations, Inc. | Methods for trimming electrical parameters in an electrical circuit |
| CN1620704A (zh) * | 2001-09-10 | 2005-05-25 | 迈克罗布里吉技术有限公司 | 使用脉冲加热和热定位进行有效的电阻微调的方法 |
| US6982587B2 (en) * | 2002-07-12 | 2006-01-03 | Rambus Inc. | Equalizing transceiver with reduced parasitic capacitance |
| FR2843482A1 (fr) * | 2002-08-12 | 2004-02-13 | St Microelectronics Sa | Procede de programmation d'un anti-fusible, et circuit de programmation associe |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5836014A (ja) * | 1981-08-28 | 1983-03-02 | Hitachi Ltd | 電子インピ−ダンス装置 |
| JP2575702B2 (ja) * | 1987-05-09 | 1997-01-29 | 富士通 株式会社 | シンセサイザ・チュ−ナ |
| IT1228034B (it) * | 1988-12-16 | 1991-05-27 | Sgs Thomson Microelectronics | Circuito generatore di corrente a specchi complementari di corrente |
| US4978905A (en) * | 1989-10-31 | 1990-12-18 | Cypress Semiconductor Corp. | Noise reduction output buffer |
| US5373226A (en) * | 1991-11-15 | 1994-12-13 | Nec Corporation | Constant voltage circuit formed of FETs and reference voltage generating circuit to be used therefor |
| US5353028A (en) * | 1992-05-14 | 1994-10-04 | Texas Instruments Incorporated | Differential fuse circuit and method utilized in an analog to digital converter |
| JP2799535B2 (ja) * | 1992-10-16 | 1998-09-17 | 三菱電機株式会社 | 基準電流発生回路 |
| KR940017214A (ko) * | 1992-12-24 | 1994-07-26 | 가나이 쓰토무 | 기준전압 발생회로 |
-
1995
- 1995-03-17 US US08/407,101 patent/US5563549A/en not_active Expired - Lifetime
- 1995-12-20 WO PCT/US1995/016833 patent/WO1996029636A1/en not_active Ceased
- 1995-12-20 AU AU44738/96A patent/AU4473896A/en not_active Abandoned
- 1995-12-20 DE DE69525662T patent/DE69525662D1/de not_active Expired - Lifetime
- 1995-12-20 EP EP95943488A patent/EP0885413B1/en not_active Expired - Lifetime
- 1995-12-20 JP JP8528375A patent/JPH11502342A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0885413A4 (enExample) | 1999-02-03 |
| EP0885413A1 (en) | 1998-12-23 |
| US5563549A (en) | 1996-10-08 |
| AU4473896A (en) | 1996-10-08 |
| EP0885413B1 (en) | 2002-02-27 |
| WO1996029636A1 (en) | 1996-09-26 |
| DE69525662D1 (de) | 2002-04-04 |
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