JPH1140859A - Infrared-ray data communication module - Google Patents

Infrared-ray data communication module

Info

Publication number
JPH1140859A
JPH1140859A JP9207358A JP20735897A JPH1140859A JP H1140859 A JPH1140859 A JP H1140859A JP 9207358 A JP9207358 A JP 9207358A JP 20735897 A JP20735897 A JP 20735897A JP H1140859 A JPH1140859 A JP H1140859A
Authority
JP
Japan
Prior art keywords
light
emitting element
data communication
communication module
infrared data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9207358A
Other languages
Japanese (ja)
Other versions
JP3900606B2 (en
Inventor
Harumi Watabe
晴美 渡部
Hirohiko Ishii
廣彦 石井
Takeshi Miura
剛 三浦
Arata Shimozawa
新 下澤
Junichi Watanabe
淳一 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Electronics Co Ltd
Original Assignee
Citizen Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Electronics Co Ltd filed Critical Citizen Electronics Co Ltd
Priority to JP20735897A priority Critical patent/JP3900606B2/en
Publication of JPH1140859A publication Critical patent/JPH1140859A/en
Application granted granted Critical
Publication of JP3900606B2 publication Critical patent/JP3900606B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Landscapes

  • Optical Communication System (AREA)
  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a low-priced microminiature and thin type infrared-ray data communication module of low power consumption having a high output light-emitting element by a method, wherein the upper surface of a light-emitting element and a light-receiving element are positioned on the outer circumference of semispherical lens parts, the circumference of the semispherical lens parts in surrounded by the reflection surface of the reflection member, and the infrared rays, emitted from the light-emitting element, are projected effectively and condensed on the light-emitting element. SOLUTION: Electronic components such as a light-emitting element 3, a light-receiving element 4, an IC chip, etc., are mounted on a circuit board 7. An inverted cone-shaped reflection surface 12b is provided in the vicinity of the inner edge part of a through-hole 12a of a shield case 12, which covers the main body of a module using an infrared-ray data communication module 11 to be sealed by light-transmitting resin 6, in such a manner that the upper surface of the light-emitting element 3 and the light-receiving element 4 are covered by semispherical lenses 6a and 6b, and the reflecting thin films 12c such as an Ni-plated layers, etc., are formed on the surface of the reflecting surfaces 12b. A wasteful light, which spreads to the left and the right sides of the light-emitting element 4, is made to be irradiated, the light of the outer circumference of the lens is condensed by the light-receiving element 4, the area of light-receiving part becomes wider, and the light-receiving and light-emitting sensitivity are enhanced. As a result, a small, thin type and low-power consuming domestic appliance for high speed and long distance operation can be attained.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、パーソナルコンピ
ューター、プリンター、PDA、ファクシミリ、ページ
ャー、携帯電話等の民生機器に使用される赤外線データ
通信モジュールに関する。
[0001] 1. Field of the Invention [0002] The present invention relates to an infrared data communication module used for consumer equipment such as a personal computer, a printer, a PDA, a facsimile, a pager, and a portable telephone.

【0002】[0002]

【従来の技術】近年、光通信機能を搭載したノート型パ
ソコン、PDA、携帯電話等の携帯機器で赤外線データ
通信モジュールの小型化がより強く要求されている。L
EDからなる赤外線発光素子、フォトダイオードからな
る受光素子、アンプ、ドライブ回路等が組み込まれたI
Cからなる回路部をリードフレームに直接ダイボンド及
びワイヤーボンドし、可視光カットエボキシ樹脂による
レンズ一体の樹脂モールドで、送信部と受信部を一パッ
ケージ化した赤外線データ通信モジュールが開発されて
いる。従来の一般的な赤外線データ通信モジュールの構
造について、図3〜図5でその概要を説明する。図3は
赤外線データ通信モジュールの外観を示す正面図、図4
は図3を上面から透視した平面図、図5は図3の内部構
成を示す断面図である。
2. Description of the Related Art In recent years, there has been a strong demand for miniaturization of infrared data communication modules in portable devices such as notebook computers, PDAs, and mobile phones equipped with an optical communication function. L
An infrared light emitting element composed of an ED, a light receiving element composed of a photodiode, an amplifier, a drive circuit and the like are incorporated.
An infrared data communication module has been developed in which a circuit portion made of C is directly die-bonded and wire-bonded to a lead frame, and a transmission unit and a reception unit are packaged in a resin-integrated resin mold using visible light cut epoxy resin. The outline of the structure of a conventional general infrared data communication module will be described with reference to FIGS. FIG. 3 is a front view showing the appearance of the infrared data communication module, and FIG.
3 is a plan view of FIG. 3 seen from above, and FIG. 5 is a sectional view showing the internal configuration of FIG.

【0003】図3〜図5において、赤外線データ通信モ
ジュール1は、リードフレーム2の上面側のみに、発光
素子3、受光素子4及びICチップ5をダイボンド及び
ワイヤーボンディングして接続されている。前記電子部
品を保護すると共に、発光素子3及び受光素子4の上面
を可視光線カット剤入りエポキシ系樹脂等の透光性樹脂
6で、赤外線光を照射及び集光する機能を持つ、半球型
レンズ部6a及び6bを形成するように樹脂封止する。
前記リードフレーム2の端子2aは、プリント基板等の
図示しないマザーボードの配線パターンに実装するため
に赤外線データ通信モジュール1の本体より外部に飛び
出している。
In FIGS. 3 to 5, the infrared data communication module 1 has a light emitting element 3, a light receiving element 4, and an IC chip 5 connected only by a die bonding and a wire bonding only to the upper surface side of a lead frame 2. A hemispherical lens having a function of irradiating and condensing infrared light with a light-transmitting resin 6 such as an epoxy resin containing a visible light-cutting agent on the upper surfaces of the light emitting element 3 and the light receiving element 4 while protecting the electronic components. Resin sealing is performed to form the portions 6a and 6b.
The terminal 2a of the lead frame 2 projects outside the main body of the infrared data communication module 1 to be mounted on a wiring pattern of a mother board (not shown) such as a printed circuit board.

【0004】図4及び図5に示すように、リードフレー
ム2の発光素子3を実装する位置にプレス絞り等で成形
された逆円錐形状の傾斜面2bを形成し、傾斜面2bに
囲まれた底面に発光素子3が実装されている。
As shown in FIGS. 4 and 5, an inverted conical inclined surface 2b formed by press drawing or the like is formed at a position on the lead frame 2 where the light emitting element 3 is mounted, and is surrounded by the inclined surface 2b. The light emitting element 3 is mounted on the bottom surface.

【0005】しかし、前述した赤外線データ通信モジュ
ールにおいて、発光素子3は、リードフレーム2と一体
成形された逆円錐形状の傾斜面2bに囲まれているの
で、発光素子3から出る赤外線光を上面に反射させる効
果はあるが、リードフレーム2を使用した実装構造で
は、赤外線データ通信モジュール1の構成部品である発
光素子3、受光素子4、ICチップ5及び図示しないコ
ンデンサ等をリードフレーム2の上面側だけに配設する
ために、実装スペースがそのまま構成部品の面積に効
き、平面的にサイズを小さくするのに限界があった。ま
た、リードフレーム2のリード端子2aが本体の外側に
飛び出しているので、プリント基板等のマザーボードへ
の実装スペースが広くなり、高密度実装を妨げる等の様
々な問題があった。
However, in the infrared data communication module described above, the light emitting element 3 is surrounded by the inverted conical inclined surface 2b integrally formed with the lead frame 2, so that the infrared light emitted from the light emitting element 3 is directed to the upper surface. Although there is an effect of reflection, in the mounting structure using the lead frame 2, the light emitting element 3, the light receiving element 4, the IC chip 5, the capacitor (not shown), etc., which are the components of the infrared data communication module 1, In this case, the mounting space has no effect on the area of the component parts, and there is a limit in reducing the size in a planar manner. In addition, since the lead terminals 2a of the lead frame 2 protrude outside the main body, there are various problems such as a large mounting space on a motherboard such as a printed circuit board, which hinders high-density mounting.

【0006】そこで、本出願人は、特願平9−4958
8号(出願日、平成9年2月19日)「赤外線データ通
信モジュール及びその製造方法」で、モジュール本体を
シールドケースで覆った技術を開示している。その概要
を図6で説明する。
Accordingly, the present applicant has filed Japanese Patent Application No. 9-4958.
No. 8 (filed on Feb. 19, 1997), "Infrared data communication module and manufacturing method thereof", discloses a technique in which a module body is covered with a shield case. The outline will be described with reference to FIG.

【0007】図6は、赤外線データ通信モジュールの断
面図である。7はガラスエポキシ樹脂等よりなる平面が
略長方形形状の絶縁性を有する回路基板で、その上面及
び下面に形成した導電パターン(図示せず)が、前記回
路基板7に形成したスルーホール8のスルーホール電極
8aを介して電気的に接続される。尚、回路基板7は、
ガラスエポキシ基板を使用したが、アルミナセラミック
基板、ポリエステルやポリイミド等のプラスチックフィ
ルム基板等を使用しても良い。
FIG. 6 is a sectional view of the infrared data communication module. Reference numeral 7 denotes a circuit board made of glass epoxy resin or the like having a substantially rectangular insulated surface and having an insulating property. Conductive patterns (not shown) formed on the upper and lower surfaces of the circuit board are formed through through holes 8 formed in the circuit board 7. It is electrically connected via the hole electrode 8a. In addition, the circuit board 7
Although a glass epoxy substrate is used, an alumina ceramic substrate, a plastic film substrate such as polyester or polyimide may be used.

【0008】3は高速赤外LEDからなる発光素子であ
り、4はフォトダイオードからなる受光素子である。両
者はそれぞれ回路基板7の上面側に実装されており、導
電パターンにダイボンド及びワイヤーボンドされ接続さ
れている。5は高速アンプ、ドライブ回路等が組み込ま
れた回路部を有するICチップであり、回路基板7の上
面側の導電パターンにダイボンド及びワイヤーボンドさ
れている。前記回路基板7の下面側には、コンデンサ9
が半田10により半田付けされ、前記スルーホール8の
スルーホール電極8aを介して接続されている。回路基
板7の下面側にコンデンサ9等を実装しない場合は、前
記スルーホール8は不要である。
Reference numeral 3 denotes a light-emitting element comprising a high-speed infrared LED, and reference numeral 4 denotes a light-receiving element comprising a photodiode. Both are mounted on the upper surface side of the circuit board 7, and are connected to the conductive pattern by die bonding and wire bonding. Reference numeral 5 denotes an IC chip having a circuit section in which a high-speed amplifier, a drive circuit and the like are incorporated, and is die-bonded and wire-bonded to a conductive pattern on the upper surface of the circuit board 7. A capacitor 9 is provided on the lower surface side of the circuit board 7.
Are soldered by the solder 10 and are connected via the through-hole electrodes 8 a of the through-holes 8. When the capacitor 9 and the like are not mounted on the lower surface side of the circuit board 7, the through hole 8 is unnecessary.

【0009】6は、前述と同様に発光素子3及び受光素
子4を樹脂封止する可視光カット剤入りエボキシ系の透
光性樹脂である。透光性樹脂6により、発光素子3及び
受光素子4の上面に半球型レンズ部6a及び6bを形成
して、赤外線光の照射及び集光の機能を持たせると同時
に両素子の保護を行う。回路基板7の下面に実装したコ
ンデンサ9は封止樹脂で封止しても、しなくても良い。
Reference numeral 6 denotes an epoxy-based translucent resin containing a visible light cutting agent for sealing the light emitting element 3 and the light receiving element 4 with a resin as described above. The translucent resin 6 forms hemispherical lens portions 6a and 6b on the upper surfaces of the light emitting element 3 and the light receiving element 4 so as to provide the function of irradiating and condensing infrared light and at the same time protect both elements. The capacitor 9 mounted on the lower surface of the circuit board 7 may or may not be sealed with a sealing resin.

【0010】図6に示す赤外線データ通信モジュール1
において、発光素子3及び受光素子4の上面に形成した
半球型レンズ部6a及び6bに対応する位置に透孔部1
2aを有するステンレス、アルミ、銅等の部材よりなる
シールドケース12で、前記モジュール本体を覆ってい
る。図6に示すように、発光素子3側の赤外線光の照射
幅はA1、受光素子4側の赤外線光の集光幅はB1に相
当する。前記シールドケース12が回路部等を囲ってい
るので、電磁シールド対策を採ることができ、外部から
のノイズ等による影響を防止するのに極めて有効であ
る。従って、半球型レンズ部6a及び6b及び図示しな
いマザーボードに実装される以外の面は、前記シールド
ケース12でカバーされている。
[0010] Infrared data communication module 1 shown in FIG.
, The through-holes 1 are provided at positions corresponding to the hemispherical lens portions 6a and 6b formed on the upper surfaces of the light emitting element 3 and the light receiving element 4.
The module body is covered by a shield case 12 made of a member such as stainless steel, aluminum, or copper having 2a. As shown in FIG. 6, the irradiation width of the infrared light on the light emitting element 3 side corresponds to A1, and the light condensing width of the infrared light on the light receiving element 4 side corresponds to B1. Since the shield case 12 surrounds the circuit section and the like, it is possible to take measures against electromagnetic shielding, which is extremely effective in preventing the influence of external noise and the like. Therefore, the surfaces other than those mounted on the hemispherical lens portions 6a and 6b and the motherboard (not shown) are covered by the shield case 12.

【0011】[0011]

【発明が解決しようとする課題】しかしながら、前述し
た赤外線データ通信モジュールには次のような問題点が
ある。即ち、赤外線データ通信モジュールとして、Ir
DAに2つのタイプが有り、その1つのタイプにIrD
A1.0規格(中出力)、1.1規格(高出力)があ
る。1.1規格によるLEDの高出力が要求される場合
には、上記したように、特に、発光素子側からの赤外線
光の一部は左右に広がってしまう無駄な光を集光、照射
することができない。また、受光素子側も受光面積を広
くしないとレンズ外周周辺の光を効率良く集光すること
ができない。従って、半球型レンズ部だけでの照射、集
光では、高出力化を実現するために、LEDに頼るか、
レンズ径を相当大きくするしかなく、製品を小さくする
ことに限界があった。また、LEDに流す電流を大きく
上げると、これはLEDの出力の劣化を招くと同時に、
セットの低消費電力化の妨げとなる等の致命的な問題と
なった。
However, the infrared data communication module described above has the following problems. That is, as an infrared data communication module, Ir
There are two types of DA, one of which is IrD
There are A1.0 standard (medium output) and 1.1 standard (high output). 1.1 When high output power of the LED according to the standard is required, as described above, in particular, a part of the infrared light from the light emitting element side condenses and irradiates useless light that spreads right and left. Can not. Also, unless the light receiving area is widened on the light receiving element side as well, light around the lens outer periphery cannot be efficiently collected. Therefore, when irradiating and condensing light only with the hemispherical lens, it is necessary to rely on LEDs to achieve high output,
There was no choice but to increase the lens diameter considerably, and there was a limit to reducing the size of the product. In addition, when the current flowing through the LED is greatly increased, this causes deterioration of the output of the LED, and at the same time,
It became a fatal problem, such as hindering the reduction in power consumption of the set.

【0012】本発明は上記従来の課題に鑑みなされたも
のであり、その目的は、発光素子及び受光素子の上面を
覆う半球型レンズ部の外周に位置し、その周囲が反射部
材の反射面で囲み、発光素子からの赤外線光及び受光素
子への赤外線光を有効に照射、集光させることにより、
低消費電力化及び発光素子の高出力化が計れる、超小
型、薄型で安価な赤外線データ通信モジュールを提供す
るものである。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and has as its object to be located at the outer periphery of a hemispherical lens portion which covers the upper surfaces of a light emitting element and a light receiving element, and the periphery of which is a reflecting surface of a reflecting member. By effectively irradiating and focusing the infrared light from the light emitting element and the infrared light to the light receiving element,
An object of the present invention is to provide an ultra-compact, thin, and inexpensive infrared data communication module which can achieve low power consumption and high output of a light emitting element.

【0013】[0013]

【課題を解決するための手段】上記目的を達成するため
に、本発明における赤外線データ通信モジュールは、平
面が略長方形形状の回路基板面に発光素子、受光素子、
ICチップ及びコンデンサ等の電子部品を実装し、前記
発光素子及び受光素子の上面を半球型レンズ部で覆うよ
うに透光性樹脂で樹脂封止する赤外線データ通信モジュ
ールにおいて、前記発光素子及び受光素子の少なくとも
いずれか一方の上面を覆う半球型レンズ部の外周に位置
し、前記半球型レンズ部の周囲が反射部材の反射面で囲
まれていることを特徴とするものである。
In order to achieve the above object, an infrared data communication module according to the present invention comprises a light emitting element, a light receiving element,
An infrared data communication module in which electronic components such as an IC chip and a capacitor are mounted, and the light emitting element and the light receiving element are resin-sealed with a translucent resin so as to cover an upper surface of the light emitting element and the light receiving element. Is located on the outer periphery of a hemispherical lens portion that covers at least one of the upper surfaces, and the periphery of the hemispherical lens portion is surrounded by a reflecting surface of a reflecting member.

【0014】また、前記反射部材の反射面の形状は、逆
円錐形状であることを特徴とするものである。
Further, the shape of the reflecting surface of the reflecting member is an inverted conical shape.

【0015】また、前記反射部材の反射面の形状は、湾
曲形状であることを特徴とするものである。
Further, the shape of the reflecting surface of the reflecting member is a curved shape.

【0016】また、前記反射部材の反射面に反射薄膜が
形成されていることを特徴とするものである。
Further, a reflective thin film is formed on a reflective surface of the reflective member.

【0017】また、前記反射部材の反射面は、前記発光
素子及び受光素子の上面に形成した半球型レンズ部に対
応する位置に透孔部を有し、モジュール本体を覆うシー
ルドケースの一部で、シールドケースの透孔部の内縁部
近傍に形成したことを特徴とするものである。
The reflecting surface of the reflecting member has a through hole at a position corresponding to a hemispherical lens formed on the upper surface of the light emitting element and the light receiving element, and is a part of a shield case that covers the module body. , Formed near the inner edge of the through hole of the shield case.

【0018】[0018]

【発明の実施の形態】以下、図面に基づいて本発明にお
ける赤外線データ通信モジュールについて説明する。図
1は、本発明の第1の実施の形態に係わる赤外線データ
通信モジュールの断面図である。図において、従来技術
と同一部材は同一符号で示す。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an infrared data communication module according to the present invention will be described with reference to the drawings. FIG. 1 is a sectional view of the infrared data communication module according to the first embodiment of the present invention. In the drawings, the same members as those of the prior art are denoted by the same reference numerals.

【0019】図1において、平面が略長方形形状の回路
基板7面に発光素子3、受光素子4、ICチップ5及び
コンデンサ9等の電子部品を実装し、前記発光素子3及
び受光素子4の上面を半球レンズ部6a、6bで覆うよ
うに透光性樹脂6で樹脂封止する赤外線データ通信モジ
ュール11を構成することは、前述の従来技術と同様で
あるので説明は省略する。
In FIG. 1, light emitting elements 3, light receiving elements 4, IC chips 5 and capacitors 9 and other electronic components are mounted on a circuit board 7 having a substantially rectangular flat surface, and the upper surfaces of the light emitting elements 3 and light receiving elements 4 are formed. The configuration of the infrared data communication module 11 in which the resin is sealed with the translucent resin 6 so that the infrared data communication module 11 is covered with the hemispherical lens portions 6a and 6b is the same as the above-described conventional technology, and thus the description is omitted.

【0020】図に示すように、前記発光素子3及び受光
素子4の上面に半球型レンズ部6a及び6bに対応する
位置に透孔部12aを有するステンレス、アルミ、銅等
の部材よりなるシールドケース12は、透孔部12aの
内縁部近傍が逆円錐形状をした反射面12bが形成され
ている。参考までに、従来のシールドケース12の透孔
部12aの形状を二点鎖線で示す。
As shown in the figure, a shield case made of a member made of stainless steel, aluminum, copper or the like having a through hole 12a at a position corresponding to the hemispherical lens portions 6a and 6b on the upper surface of the light emitting element 3 and the light receiving element 4. 12, a reflection surface 12b having an inverted conical shape near the inner edge of the through-hole portion 12a is formed. For reference, the shape of the through-hole portion 12a of the conventional shield case 12 is indicated by a two-dot chain line.

【0021】前記反射面12bの表面には、発光素子3
(高速赤外LED)からの赤外線光、及び受光素子4
(P−Di)への赤外線光の反射効率をアップするため
に、銀色の反射薄膜12c、例えば、Niメッキ層を形
成する。
The light emitting element 3 is provided on the surface of the reflection surface 12b.
Infrared light from (high-speed infrared LED) and light receiving element 4
In order to increase the reflection efficiency of infrared light to (P-Di), a silver reflective thin film 12c, for example, a Ni plating layer is formed.

【0022】図1に示すように、発光素子3側からの赤
外線光は、従来は、左右に広がってしまう無駄な光も、
反射面12bと、その表面に形成された反射薄膜12c
により効率良く反射されて上方に集光、照射される。ま
た、受光素子4側への赤外線光は、従来は、半球型レン
ズ部6bのレンズ径より外側で集光できなかった赤外線
光を反射面12bと、その表面に形成された反射薄膜1
2cにより効率良く集光することができるので、受光面
積が拡大され、発光素子側及び受光素子側共に感度アッ
プとなる。
As shown in FIG. 1, the infrared light from the light emitting element 3 side is not limited to the useless light which conventionally spreads right and left.
Reflection surface 12b and reflection thin film 12c formed on the surface
The light is efficiently reflected, condensed and irradiated upward. In addition, the infrared light to the light receiving element 4 side is the infrared light that could not be condensed outside the lens diameter of the hemispherical lens portion 6b in the past, the reflection surface 12b and the reflection thin film 1 formed on the surface.
Since the light can be condensed efficiently by 2c, the light receiving area is enlarged, and the sensitivity is increased on both the light emitting element side and the light receiving element side.

【0023】図1に示すように、発光素子3側の赤外線
光の照射幅A2、及び受光素子4側の赤外線光の集光幅
B2は、前述(図6)したように、発光素子3側の赤外
線光の照射幅A1、及び受光素子4側の赤外線光の集光
幅B1に比較して、共に広くなる。即ち、同一の大きさ
のレンズ径において、A2>A1、B2>B1となり、
反射面12bにより発光及び受光面積が拡大される。
As shown in FIG. 1, the irradiation width A2 of the infrared light on the light emitting element 3 side and the light condensing width B2 of the infrared light on the light receiving element 4 side are, as described above (FIG. 6), the light emitting element 3 side. Both are wider than the irradiation width A1 of the infrared light and the light collection width B1 of the infrared light on the light receiving element 4 side. That is, for the same size lens diameter, A2> A1, B2> B1, and
The light emitting and receiving areas are enlarged by the reflecting surface 12b.

【0024】図2は、本発明の第2の実施の形態に係わ
る赤外線データ通信モジュールの断面図である。
FIG. 2 is a sectional view of an infrared data communication module according to a second embodiment of the present invention.

【0025】図2において、11は赤外線データ通信モ
ジュールであり、前記発光素子3及び受光素子4の上面
に半球型レンズ部6a及び6bに対応する位置の、シー
ルドケース12の透孔部12aの内縁部近傍に、湾曲形
状をしている反射面12dを形成し、その表面に上記と
同様に銀色の反射薄膜12c、例えば、Niメッキ層を
形成する。参考までに、従来のシールドケース12の透
孔部12aの形状を二点鎖線で示す。湾曲形状をしてい
る反射面12dの作用、効果は上述の第1の実施の形態
と同様であるので、説明は省略する。
In FIG. 2, reference numeral 11 denotes an infrared data communication module, which is located on the upper surface of the light emitting element 3 and the light receiving element 4 at the inner edge of the through hole 12a of the shield case 12 at a position corresponding to the hemispherical lens parts 6a and 6b. A reflective surface 12d having a curved shape is formed near the portion, and a silver reflective thin film 12c, for example, a Ni plating layer is formed on the surface in the same manner as described above. For reference, the shape of the through-hole portion 12a of the conventional shield case 12 is indicated by a two-dot chain line. The operation and effect of the curved reflecting surface 12d are the same as those of the first embodiment, and thus the description is omitted.

【0026】上述した第1及び第2の実施の形態では、
シールドケースの一部を利用してそれぞれの半球型レン
ズ部の透孔部の内縁部近傍に反射面を形成したが、前記
発光素子及び受光素子の上面を覆う半球型レンズ部の外
周部に位置し、その周囲にシールドケース以外の、図示
しない反射部材を配設して反射面を形成しても良いこと
は言うまでもない。
In the first and second embodiments described above,
A reflective surface was formed near the inner edge of the through-hole of each hemispherical lens portion using a part of the shield case, but was positioned at the outer peripheral portion of the hemispherical lens portion covering the upper surfaces of the light emitting element and the light receiving element. Needless to say, a reflection member (not shown) other than the shield case may be provided around the periphery to form a reflection surface.

【0027】また、上述した第1及び第2の実施の形態
では、発光素子側及び受光素子側の両方に反射面を設け
たが、いずれか一方に設けても良い。例えば、発光素子
側に設けることで、発光素子の照射の感度アップに、よ
り有効である。
In the first and second embodiments described above, the reflecting surfaces are provided on both the light emitting element side and the light receiving element side, but they may be provided on either one side. For example, providing the light-emitting element on the light-emitting element side is more effective in increasing the irradiation sensitivity of the light-emitting element.

【0028】[0028]

【発明の効果】以上説明したように、従来は、半球型レ
ンズ部だけでの集光では、高出力化を実現するために、
LEDに頼るか、レンズ径を相当大きくするしかなく、
小型化が困難であったが、本発明によれば、半球型レン
ズ部の周囲が反射部材の反射面で囲むことにより、発光
素子側は、左右に広がってしまう無駄な光を集光、照射
し、受光素子側は、受光面積が広がり感度アップとな
る。
As described above, conventionally, in the case of condensing light only by the hemispherical lens portion, in order to realize a high output,
You have to rely on LEDs or increase the lens diameter considerably,
Although miniaturization was difficult, according to the present invention, the periphery of the hemispherical lens portion is surrounded by the reflecting surface of the reflecting member, so that the light emitting element side collects and irradiates useless light that spreads right and left. However, on the light receiving element side, the light receiving area is increased and the sensitivity is increased.

【0029】また、反射部材の反射面は、シールドケー
スの透孔部の内縁部近傍に形成したシールドケースの一
部を利用するために、反射面を設けるのに特にコストア
ップにはならない。
Further, since the reflection surface of the reflection member uses a part of the shield case formed in the vicinity of the inner edge of the through hole of the shield case, providing the reflection surface does not increase the cost.

【0030】また、反射面に反射薄膜を形成することに
より反射効率をアップすることができる。
The reflection efficiency can be improved by forming a reflective thin film on the reflective surface.

【0031】以上より、低消費電力でLEDの高出力
化、受光、発光の感度アップが計られた赤外線データ通
信モジュールが提供でき、小型、薄型、低消費電力の高
速・長距離通信の民生機器の実現が可能である。
As described above, it is possible to provide an infrared data communication module with high power output of LEDs and high sensitivity of light reception and light emission with low power consumption, and is a small, thin, low power consumption consumer device for high speed and long distance communication. Can be realized.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施の形態に係わる赤外線デー
タ通信モジュールの断面図である。
FIG. 1 is a sectional view of an infrared data communication module according to a first embodiment of the present invention.

【図2】本発明の第2の実施の形態に係わる赤外線デー
タ通信モジュールの断面図である。
FIG. 2 is a sectional view of an infrared data communication module according to a second embodiment of the present invention.

【図3】従来の赤外線データ通信モジュールの外観正面
図である。
FIG. 3 is an external front view of a conventional infrared data communication module.

【図4】図3の上面から透視した平面図である。FIG. 4 is a plan view seen through from the upper surface of FIG. 3;

【図5】図3の断面図である。FIG. 5 is a sectional view of FIG. 3;

【図6】従来のシールドケースを装着した赤外線データ
通信モジュールの断面図である。
FIG. 6 is a sectional view of an infrared data communication module equipped with a conventional shield case.

【符号の説明】[Explanation of symbols]

3 発光素子 4 受光素子 5 ICチップ 6 透光性樹脂 6a、6b 半球型レンズ部 7 回路基板 11 赤外線データ通信モジュール 12 シールドケース 12a 透孔部 12b、12d 反射面 12c 反射薄膜 A1、A2 発光素子側の赤外線光の照射幅 B1、B2 受光素子側の赤外線光の集光幅 Reference Signs List 3 light emitting element 4 light receiving element 5 IC chip 6 translucent resin 6a, 6b hemispherical lens unit 7 circuit board 11 infrared data communication module 12 shield case 12a through hole 12b, 12d reflective surface 12c reflective thin film A1, A2 light emitting element side Irradiation width of infrared light B1, B2 Focusing width of infrared light on the light receiving element side

───────────────────────────────────────────────────── フロントページの続き (72)発明者 下澤 新 山梨県富士吉田市上暮地1丁目23番1号 株式会社シチズン電子内 (72)発明者 渡辺 淳一 山梨県富士吉田市上暮地1丁目23番1号 株式会社シチズン電子内 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Shimozawa Shin 1-23-1, Kagureji, Fujiyoshida-shi, Yamanashi Pref. Citizen Electronics Co., Ltd.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 平面が略長方形形状の回路基板面に発光
素子、受光素子、ICチップ及びコンデンサ等の電子部
品を実装し、前記発光素子及び受光素子の上面を半球型
レンズ部で覆うように透光性樹脂で樹脂封止する赤外線
データ通信モジュールにおいて、前記発光素子及び受光
素子の少なくともいずれか一方の上面を覆う半球型レン
ズ部の外周に位置し、前記半球型レンズ部の周囲が反射
部材の反射面で囲まれていることを特徴とする赤外線デ
ータ通信モジュール。
An electronic component such as a light emitting element, a light receiving element, an IC chip and a capacitor is mounted on a circuit board surface having a substantially rectangular shape in a plane, and the upper surfaces of the light emitting element and the light receiving element are covered with a hemispherical lens portion. In an infrared data communication module resin-sealed with a translucent resin, the infrared data communication module is located on an outer periphery of a hemispherical lens portion covering an upper surface of at least one of the light emitting element and the light receiving element, and a periphery of the hemispherical lens portion is a reflecting member An infrared data communication module characterized by being surrounded by a reflective surface.
【請求項2】 前記反射部材の反射面の形状は、逆円錐
形状であることを特徴とする請求項1記載の赤外線デー
タ通信モジュール。
2. The infrared data communication module according to claim 1, wherein the shape of the reflection surface of the reflection member is an inverted conical shape.
【請求項3】 前記反射部材の反射面の形状は、湾曲形
状であることを特徴とする請求項1記載の赤外線データ
通信モジュール。
3. The infrared data communication module according to claim 1, wherein the shape of the reflection surface of the reflection member is a curved shape.
【請求項4】 前記反射部材の反射面に反射薄膜が形成
されていることを特徴とする請求項2又は3記載の赤外
線データ通信モジュール。
4. The infrared data communication module according to claim 2, wherein a reflection thin film is formed on a reflection surface of the reflection member.
【請求項5】 前記反射部材の反射面は、前記発光素子
及び受光素子の上面に形成した半球型レンズ部に対応す
る位置に透孔部を有し、モジュール本体を覆うシールド
ケースの一部で、シールドケースの透孔部の内縁部近傍
に形成したことを特徴とする請求項1記載の赤外線デー
タ通信モジュール。
5. The reflection surface of the reflection member has a through hole at a position corresponding to a hemispherical lens formed on the upper surface of the light emitting element and the light receiving element, and is a part of a shield case that covers a module body. 2. The infrared data communication module according to claim 1, wherein the infrared data communication module is formed near an inner edge of the through hole of the shield case.
JP20735897A 1997-07-17 1997-07-17 Infrared data communication module Expired - Fee Related JP3900606B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20735897A JP3900606B2 (en) 1997-07-17 1997-07-17 Infrared data communication module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20735897A JP3900606B2 (en) 1997-07-17 1997-07-17 Infrared data communication module

Publications (2)

Publication Number Publication Date
JPH1140859A true JPH1140859A (en) 1999-02-12
JP3900606B2 JP3900606B2 (en) 2007-04-04

Family

ID=16538417

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3900606B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001036147A (en) * 1999-07-22 2001-02-09 Nichia Chem Ind Ltd Light emitting diode
JP2006041084A (en) * 2004-07-26 2006-02-09 Sharp Corp Optical semiconductor device, optical connector, and electronic equipment
JP2006049657A (en) * 2004-08-06 2006-02-16 Citizen Electronics Co Ltd Led lamp
EP1710846A1 (en) * 2005-04-08 2006-10-11 Sharp Kabushiki Kaisha Light-emitting diode
US7291867B2 (en) * 2005-03-09 2007-11-06 Sharp Kabushiki Kaisha Optical semiconductor device, electronic device, and method for producing optical semiconductor device
JP2007318504A (en) * 2006-05-26 2007-12-06 Kyocera Corp Communication terminal
JP2011039032A (en) * 2009-05-08 2011-02-24 Avago Technologies Ecbu Ip (Singapore) Pte Ltd Metal shield and housing of optical proximity sensor increasing resistance to undesirable mechanical deformation
JP2011180121A (en) * 2009-12-04 2011-09-15 Avago Technologies Ecbu Ip (Singapore) Pte Ltd Optical proximity sensor with improved shield and lenses
US8421088B2 (en) 2007-02-22 2013-04-16 Sharp Kabushiki Kaisha Surface mounting type light emitting diode
US8604506B2 (en) 2007-02-22 2013-12-10 Sharp Kabushiki Kaisha Surface mounting type light emitting diode and method for manufacturing the same

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001036147A (en) * 1999-07-22 2001-02-09 Nichia Chem Ind Ltd Light emitting diode
JP2006041084A (en) * 2004-07-26 2006-02-09 Sharp Corp Optical semiconductor device, optical connector, and electronic equipment
JP2006049657A (en) * 2004-08-06 2006-02-16 Citizen Electronics Co Ltd Led lamp
US7291867B2 (en) * 2005-03-09 2007-11-06 Sharp Kabushiki Kaisha Optical semiconductor device, electronic device, and method for producing optical semiconductor device
US7598532B2 (en) 2005-04-08 2009-10-06 Sharp Kabushiki Kaisha Light-emitting diode
EP1710846A1 (en) * 2005-04-08 2006-10-11 Sharp Kabushiki Kaisha Light-emitting diode
US7964886B2 (en) 2005-04-08 2011-06-21 Sharp Kabushiki Kaisha Light emitting diode
JP2007318504A (en) * 2006-05-26 2007-12-06 Kyocera Corp Communication terminal
JP4568696B2 (en) * 2006-05-26 2010-10-27 京セラ株式会社 Communication terminal device
US8421088B2 (en) 2007-02-22 2013-04-16 Sharp Kabushiki Kaisha Surface mounting type light emitting diode
US8604506B2 (en) 2007-02-22 2013-12-10 Sharp Kabushiki Kaisha Surface mounting type light emitting diode and method for manufacturing the same
JP2011039032A (en) * 2009-05-08 2011-02-24 Avago Technologies Ecbu Ip (Singapore) Pte Ltd Metal shield and housing of optical proximity sensor increasing resistance to undesirable mechanical deformation
JP2011180121A (en) * 2009-12-04 2011-09-15 Avago Technologies Ecbu Ip (Singapore) Pte Ltd Optical proximity sensor with improved shield and lenses

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