JPH11340179A - Semiconductor material wet treatment method and semiconductor material treatment tub - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor material treatment method and a semiconductor material treatment tub, with which uniform and sufficient treatment can be performed without causing any treatment residue even in the case of treating a semiconductor material in the treatment tub of a treatment liquid circulation type. SOLUTION: Concerning the semiconductor material wet treatment method and the semiconductor material treatment tub, when treating the semiconductor material in liquid, treatment liquid in a treatment tub 3 is circulated by a circulation conduit 5, fans 4 and 4' are attached to discharge ports 8 and 8' for discharging the treatment liquid from this circulation conduit 5 into the treatment tub 3, and, while being driven with the circulation pressure of the treatment liquid, the fans 4 and 4' apply the treatment liquid toward semiconductor materials 1a, 1b,..., 1a', 1b',... to be treated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor material wet processing method and a semiconductor material processing tank. The present invention can be applied to various processes for various semiconductor materials, and provides a processing technique capable of realizing uniform and reliable processing.

[0002]

2. Description of the Related Art As a treatment of a semiconductor material, an unnecessary film such as a silicon wafer is removed by washing. For example, in order to remove a SiN film from a semiconductor substrate, a chemical solution is boiled at a high temperature and supplied to a circulation-type processing tank, where the SiN film is removed from the semiconductor substrate in the processing tank. A semiconductor material to be processed, such as a wafer, is carried on a carrier accommodating a plurality of wafers, etc., and the carrier is immersed in a chemical solution in a processing tank to be processed. The structure in which the carrier carries the semiconductor material is typically such that a plurality of semiconductor wafers are accommodated in the carrier by fitting the sides of the semiconductor wafer to grooves 21 formed on the inner surface of the carrier 2 as shown in FIG. It is stored and carried. Typically, this carrier is formed of Teflon, which has good resistance to chemicals. Further, the processing tank is usually a quartz tank formed of quartz.

A conventional quartz tank of this kind can be used up to a 6-inch wafer, and can simultaneously process up to two carriers. Therefore, two carriers are arranged in the quartz bath, and the semiconductor material carried on each carrier is processed.

In the conventional circulation system, a suction port and a discharge port for a chemical solution are provided on a lower surface of a tank, and a processing liquid is circulated by a circulation pump. Further, the treatment liquid is circulated through the filter. The processing liquid is heated to a high temperature. For example, a rubber heater is attached below the quartz bath, thereby heating the processing liquid to a high temperature. That is, the conventional circulation type processing tank, particularly the cleaning processing tank, is provided with a rubber heater, and is configured with one discharge port and one suction port.
The circulating pump, piping (flow path), circulating filter, and control unit serving as the circulating unit constitute a single cleaning processing flow facility.

[0005] The conventional quartz processing tank has a structure in which two carriers are arranged in the quartz tank as described above, and a chemical solution inlet and an outlet are provided on the lower surface of the tank. There is a discharge port (IN) for the chemical solution into the processing tank, and a suction port (OUT) for the chemical solution to the processing tank in the other carrier arrangement portion.

As a problem of the prior art, there is a problem that the processing is not sufficiently performed at a portion where the semiconductor material supporting groove (see reference numeral 21 in FIG. 3) of the carrier contacts the semiconductor material. . As for the SiN film removal processing, the SiN film cannot be completely removed, and the processing residue may be generated. For example, by inserting the side of the semiconductor wafer into the groove 21 of the carrier 2 as shown in FIG.
When a large number of semiconductor wafers are supported as schematically shown in FIG. 5, the processing is not sufficiently performed on the side of the semiconductor wafer in contact with the groove 21, and the residual processing 1A may occur as shown in FIG. is there.

The above processing residue (particularly, for example, Si
When the N film remains, the semiconductor chip in that portion of the wafer becomes defective. Such defective products cannot be reproduced or cannot be subjected to additional processing.

[0008]

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances. Even when a semiconductor material is treated in a treatment tank of a treatment liquid circulation type, a treatment residue is not generated, and the treatment is uniform and sufficient. It is an object of the present invention to provide a semiconductor material wet processing method and a semiconductor material processing tank capable of realizing various processes.

[0009]

A semiconductor material processing method according to the present invention is a processing method for processing a semiconductor material with a liquid, wherein the processing liquid in the processing tank is circulated through a circulation channel,
A fan is attached to a discharge port from which the processing liquid is discharged from the circulation flow path into the processing tank, and the fan is driven by a circulating pressure of the processing liquid to supply the processing liquid toward the semiconductor material to be processed. Is what you do.

In the semiconductor material processing tank according to the present invention, a processing liquid in the processing tank is circulated through a circulation channel, and a fan is attached to a discharge port from which the processing liquid is discharged from the circulation channel into the processing tank. The fan is driven by the circulating pressure of the processing liquid to supply the processing liquid toward the semiconductor material to be processed.

According to the present invention, a fan is attached to the discharge port from which the processing liquid is discharged from the circulation channel into the processing tank,
Since the processing liquid is applied to the semiconductor material to be processed via the fan, the processing liquid uniformly hits the semiconductor material to be processed, the processing is performed uniformly, and the processing residue is less likely to occur. In addition, since the fan is driven by the circulating pressure of the processing liquid, no special driving equipment is required for the fan.

That is, according to the present invention, the prior art does not have a structure in which the processing liquid is always easy to circulate, and the circulated processing chemicals do not evenly hit the semiconductor material to be processed, so that there is a problem that the processing residue remains. Is solved by the above configuration.

Japanese Patent Application Laid-Open No. Hei 5-144798 discloses an etching apparatus provided with a fan for stirring an etching solution in an etching tank. There is no idea of driving the fan, and a motor is used to drive the fan, which is a technique different from the present invention.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION The embodiments of the present invention will be described in more detail below, and specific examples of preferred embodiments of the present invention will be further described with reference to the drawings. I do. However, needless to say, the present invention is not limited to the illustrated embodiment.

In the present invention, the treatment includes various treatments performed on a semiconductor material with a liquid, and includes various treatments performed in a semiconductor manufacturing process such as cleaning with a chemical solution or the like, wet etching, removal of deposits, and removal of a photoresist. Processing. The present invention can be widely used for such various wet treatments.

Specifically, in a preferred embodiment of the present invention, it is preferable that the circulation type quartz tank has a structure in which there are two circulation outlets (inflow ports of the processing solution into the tank). Using two carriers, one in the center of each carrier
It is preferable to provide a configuration in which discharge ports are provided at several places.

The fan may be of a blade type (for example, three blades), which is rotated at a circulating pressure to flow a processing liquid to an upper semiconductor material to be processed (a semiconductor wafer or the like).

The fan may be made of Teflon, and a female screw may be provided at a discharge port of a tank, for example, a quartz tank, and a male screw may be cut toward the fan and screwed into the discharge port to fix the fan.

First Embodiment Next, a first embodiment of the present invention will be described with reference to FIG. FIG. 1 schematically shows the configuration of the processing tank used in this example. FIG. 1 shows a configuration view from the side. In this example, a semiconductor substrate (silicon wafer) is used as a semiconductor material to be processed, and the present invention is embodied in a cleaning process particularly for removing SiN.

1 and 2, reference numerals 1a, 1b,.
.., 1a ′, 1b ′,... Are semiconductor materials to be processed, particularly silicon wafers. Reference numerals 2 and 2 'denote carriers (in this case, particularly, cleaning carriers) for supporting and storing these silicon wafers to be processed. In this example, as shown, the wafer processing is efficiently performed using the two carriers 2 and 2 ′. Reference numeral 3 denotes a processing tank, in which the silicon wafer to be processed supported by the carriers 2 and 2 'is immersed in the processing liquid and washed.

Reference numerals 4 and 4 'denote fans.
The one with three blades was used. Reference numeral 5 denotes a flow path, which is a pipe here. A circulation pump 6 and a circulation filter 7 are provided in the flow path 5. The discharge ports for inflow of the processing liquid into the processing tank 3 are formed at two locations as indicated by reference numerals 8 and 8 '. Here, the fans 4, 4 'are mounted by screwing as described above. As shown by arrows 51 and 52, the processing liquid circulating in the flow path 5
The fan 4 and 4 'are driven (rotated) by the circulating pressure at this time through the two discharge ports 8, 8'. Outlet 8,
8 'is located at a position corresponding to the arrangement position of each carrier 2, 2' (near the center of each carrier 2, 2 '), so that fans 4, 4' correspond to the arrangement position of each carrier 2, 2 ' (The lower part near the center of each carrier 2, 2 ').

That is, the processing liquid that has passed through the circulation filter 7 enters the circulation pump 6 and is controlled by the pressure of the pump (for example, a pressure of 1 to ² kgf / cm ² ), and Flow to the 'part. Fan 4,
4 'rotates at the pressure of the circulating pump 6, that is, the circulating pressure, and the processing liquid is thereby rotated by the carriers 2, 2'.
Flows towards

With the processing tank having such a configuration, uniform and sufficient processing (here, SiN cleaning) could be achieved. This is presumably because the processing liquid (cleaning liquid) rises by the fans 4 and 4 'as described above, so that the SiN film in the remaining part of the processing shown in FIG. 5 can be completely removed.

The processing liquid entering the processing tank 3 flows to the OUT side, exits the tank as indicated by an arrow 53, and circulates in the flow path 5.

As described above, in the prior art, one of the carriers is provided with a discharge port (IN) for the chemical solution into the processing tank, and the other carrier is provided with a suction port (OUT) for the chemical solution into the processing tank. 5), the processing inevitably occurs as shown in FIG. 5. However, in this example, the fans 4, 4 'operated by the circulating pressure are provided, and the IN (discharge ports 8, 8') are provided. Since the processing material is provided at two locations, the processing liquid is evenly applied to the semiconductor material to be processed, and the processing liquid is uniformly applied to both carriers 2 and 2 ′, so that the processing residue that has been generated so far is improved.

As described above, according to the present embodiment, the circulating discharge port is connected to each carrier (here, a Teflon carrier).
Attaching to the center of the lower part improves the processing, especially the film removing effect. Therefore, the removal of the film at the contact portion between the wafer and the carrier, which has been a problem in the prior art, can also be successfully achieved. As a result, the occurrence of defective products was prevented, and the defect occurrence rate was 0 in this example.

In this embodiment, the number of circulation outlets is changed from one to two in the prior art, so that a processing tank (here, a quartz tank) is used.
The circulation effect in the interior is improved, particles are efficiently removed, and the removal rate is made uniform.

Since the fan (here, made of Teflon) is attached to the circulation outlet, the circulation effect, the particle removal effect, and the improvement of the removal rate are further realized. In addition, nitrogen gas bubbling and the like are unnecessary by installing such a fan (electric power is not required for this rotation).

As shown in FIG. 2, the rubber heater 9
1 is provided to heat the processing liquid.
Further, a Teflon die indicated by reference numeral 92 may be provided.

[0030]

As described above, according to the present invention, even when a semiconductor material is processed in a processing liquid circulation type processing tank, the semiconductor processing can be performed uniformly and sufficiently without remaining processing. A material processing method and a semiconductor material processing tank can be provided.

[Brief description of the drawings]

FIG. 1 is a view showing a first embodiment of the present invention, and schematically shows a configuration of a processing tank.

FIG. 2 is a view showing Embodiment 1 of the present invention, and shows a configuration of a processing tank in a side view.

FIG. 3 is a diagram for explaining the background of the present invention, and is a diagram illustrating a configuration of a carrier.

FIG. 4 is also a schematic view showing a carrier supporting structure.

FIG. 5 is a diagram showing a problem of the related art.

[Explanation of symbols]

1a, 1b, ..., 1a ', 1b', ... semiconductor material to be processed (silicon wafer), 2, 2 '... carrier, 3 ... processing tank, 4, 4' ... fan , 5 ...
Flow path (piping), 6: circulation pump, 7: circulation filter, 8, 8 '... discharge port.

Claims (5)

[Claims] 1. A processing method for processing a semiconductor material with a liquid, wherein a fan is attached to a discharge port of the processing tank from which a processing liquid is discharged into a processing tank through a circulation channel in which the processing liquid circulates. The method according to claim 1, wherein the fan is driven by a circulating pressure of the processing liquid to apply the processing liquid toward the semiconductor material to be processed. 2. A processing tank for processing a semiconductor material with a liquid, wherein a fan is attached to a discharge port from which a processing liquid is discharged from a circulation flow path of the processing tank to circulate the processing liquid into the processing tank. A semiconductor material processing tank, wherein the fan is driven by a circulating pressure of the processing liquid to supply the processing liquid toward the semiconductor material to be processed. 3. The semiconductor material processing tank according to claim 2, wherein two discharge ports from which the processing liquid is discharged from the circulation flow path into the processing tank are provided. 4. The semiconductor material processing tank according to claim 2, wherein the semiconductor material to be processed is carried by a carrier, and the discharge port is provided near the center of the arrangement position of the carrier. 5. A processing tank in which two carriers are arranged, a semiconductor material carried on each carrier is processed, and two discharge ports are arranged at positions corresponding to the respective carriers. 3. The semiconductor material processing tank according to claim 2, wherein the tank is provided near a center.