JPH11337454A - Wiring pattern inspecting method and its device - Google Patents
Wiring pattern inspecting method and its deviceInfo
- Publication number
- JPH11337454A JPH11337454A JP10145298A JP14529898A JPH11337454A JP H11337454 A JPH11337454 A JP H11337454A JP 10145298 A JP10145298 A JP 10145298A JP 14529898 A JP14529898 A JP 14529898A JP H11337454 A JPH11337454 A JP H11337454A
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- Japan
- Prior art keywords
- wiring pattern
- infrared sensor
- image data
- infrared
- substrate
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Testing Of Devices, Machine Parts, Or Other Structures Thereof (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Liquid Crystal (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は配線パターン検査方
法およびその装置に関し、さらに詳しく言えば、液晶表
示パネル用の透明基板上に形成された透明電極パターン
の良否判別に好適な配線パターンの検査技術に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring pattern inspection method and apparatus, and more particularly, to a wiring pattern inspection technique suitable for judging the quality of a transparent electrode pattern formed on a transparent substrate for a liquid crystal display panel. It is about.
【０００２】[0002]
【従来の技術】基板上に形成された配線パターンの短絡
や断線などの検査方法としては、例えばＯＳチェッカー
（導通チェッカー）もしくはスキャン式パターン検査機
によるショート・オープンテストや配線パターンの画像
を撮像し、その画像パターンを解析処理して検査する画
像解析処理装置などが知られている。2. Description of the Related Art As a method for inspecting a short circuit or a disconnection of a wiring pattern formed on a substrate, for example, an OS checker (continuity checker) or a scan type pattern inspector is used to take an image of a short / open test or a wiring pattern. An image analysis processing apparatus for analyzing and inspecting the image pattern is known.
【０００３】ＯＳチェッカーとスキャン式パターン検査
機は、ともにプローブを配線パターンに接触させ、なぞ
りながらその配線パターンに流れる電流の有無によりオ
ープン・ショートを検査する点では同じであるが、ＯＳ
チェッカーでは用いられるプローブが４本ないしそれ以
下であるのに対して、スキャン式パターン検査機では検
査タクトを上げるためにプローブの本数を１０本以上と
している。[0003] The OS checker and the scan-type pattern inspection machine are the same in that both the probe is brought into contact with the wiring pattern and the open / short circuit is inspected by tracing and checking the presence or absence of a current flowing through the wiring pattern.
While the checker uses four or less probes, the scan-type pattern inspection machine uses ten or more probes to increase the inspection tact.
【０００４】また、画像解析処理装置においては、配線
パターンに光を照射し、その反射光もしくは透過光をＣ
ＣＤカメラにて撮像し、その画像データを所定に処理し
て配線パターンの良否判別を行なうようにしている。Further, in an image analysis processing apparatus, a wiring pattern is irradiated with light, and reflected light or transmitted light thereof is converted into C light.
An image is taken by a CD camera, and the image data is processed in a predetermined manner to determine the quality of the wiring pattern.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、ＯＳチ
ェッカーやスキャン式パターン検査機では、プローブを
配線パターンに接触させるため傷つきの問題がある。ま
た、スキャン式パターン検査機にしても、配線パターン
の本数が多い場合には、検査に長時間を要するという問
題がある。However, the OS checker and the scanning pattern inspection apparatus have a problem of being damaged because the probe is brought into contact with the wiring pattern. Further, even in the case of a scanning pattern inspection machine, there is a problem that the inspection requires a long time when the number of wiring patterns is large.
【０００６】これに対して、画像処理によれば、非接触
であるため配線パターンに対する傷つきの問題は解消さ
れ、また、多数の配線パターンを一括処理できるため短
時間での検査が可能であるが、これには次のような課題
がある。[0006] On the other hand, according to the image processing, the problem of damage to the wiring pattern is eliminated because it is non-contact, and the inspection can be performed in a short time because a large number of wiring patterns can be processed collectively. However, this has the following problems.
【０００７】すなわち、検査対象が液晶表示パネルに用
いられる透明電極基板である場合、その電極パターンは
透明で見えにくいため画像処理が難しい。また、その分
解能との関係から、例えばヒゲ状断線と呼ばれる剃刀で
切ったような細かい断線などについては、その検出が困
難であった。That is, when the object to be inspected is a transparent electrode substrate used for a liquid crystal display panel, the electrode pattern is transparent and difficult to see, so that image processing is difficult. In addition, due to the relationship with the resolution, it is difficult to detect, for example, a fine disconnection called a whisker-like disconnection that is cut with a razor.
【０００８】本発明は、このような課題を解決するため
になされたもので、その目的は、透明電極などの見えに
くい配線パターンであっても、画像処理にて確実にその
良否判別が行なえるようにした配線パターン検査方法お
よびその装置を提供することにある。SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and an object of the present invention is to make it possible to reliably determine the quality of a wiring pattern such as a transparent electrode by image processing. An object of the present invention is to provide a wiring pattern inspection method and an apparatus therefor as described above.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するた
め、本発明の配線パターン検査方法は、基板上に形成さ
れている配線パターンに通電して、同配線パターンより
赤外線を発生させ、赤外線センサでその赤外線を撮像
し、同撮像信号を画像処理して所定の基準画像データと
対比することにより、上記配線パターンの良否を検査す
ることを特徴としている。In order to achieve the above object, a wiring pattern inspection method according to the present invention energizes a wiring pattern formed on a substrate, generates infrared rays from the wiring pattern, and uses an infrared sensor. The imaging of the infrared ray is performed, and the quality of the wiring pattern is inspected by performing image processing on the imaging signal and comparing the processed image with predetermined reference image data.
【００１０】この場合、上記基準画像データは、あらか
じめ良品と確認された配線パターンに通電して同配線パ
ターンから発せられた赤外線を上記赤外線センサで撮像
して画像処理したものであることが好ましい。In this case, it is preferable that the reference image data is obtained by energizing a wiring pattern that has been confirmed in advance and imaging the infrared rays emitted from the wiring pattern with the infrared sensor and performing image processing.
【００１１】本発明は、配線パターンそのものを撮像す
るのではなく、配線パターンから発生する赤外線を撮像
して画像処理するものであるため、配線パターンが透明
電極である場合に特に好適である。Since the present invention is not for imaging the wiring pattern itself but for imaging infrared rays generated from the wiring pattern and performing image processing, it is particularly suitable when the wiring pattern is a transparent electrode.
【００１２】また、本発明の配線パターン検査装置は、
基板上に形成されている配線パターンに所定の電流を供
給する電源部と、同電源部からの給電により上記配線パ
ターンから発生する赤外線を撮像する赤外線センサと、
同赤外線センサの撮像信号を画像処理するとともに、所
定の基準画像データと対比して、上記配線パターンの良
否を判別する良否判別手段とを備えていることを特徴と
している。Further, the wiring pattern inspection apparatus of the present invention
A power supply unit that supplies a predetermined current to the wiring pattern formed on the substrate, an infrared sensor that captures infrared light generated from the wiring pattern by power supply from the power supply unit,
In addition to image processing of an image pickup signal of the infrared sensor, the image sensor further includes a quality judgment unit for judging the quality of the wiring pattern by comparing the image signal with predetermined reference image data.
【００１３】[0013]
【発明の実施の形態】次に、本発明を図面に示されてい
る実施例に基づいてより詳しく説明する。図１はこの実
施例の模式図であり、これには被検査回路基板として液
晶表示パネル用の透明電極基板１０を検査する状態が図
解されており、図２には同透明電極基板１０の断面が示
されている。BRIEF DESCRIPTION OF THE DRAWINGS The invention will now be described in more detail with reference to an embodiment shown in the drawings. FIG. 1 is a schematic view of this embodiment. FIG. 1 illustrates a state in which a transparent electrode substrate 10 for a liquid crystal display panel is inspected as a circuit substrate to be inspected. FIG. It is shown.
【００１４】まず、透明電極基板１０について説明する
と、同透明電極基板１０は所定厚さ（例えば、０．７ｍ
ｍ厚）の透明ガラス基板１１を備えている。この透明ガ
ラス基板１１上にはＳｉＯ２などのアルカリ保護膜１２
が形成され、その上に多数の透明電極１３が所定のピッ
チをもってストライプ状に形成されている。First, the transparent electrode substrate 10 will be described. The transparent electrode substrate 10 has a predetermined thickness (for example, 0.7 m).
m thickness) of the transparent glass substrate 11. Alkaline protective film 12 such as SiO 2 is formed on the transparent glass substrate 11
Are formed thereon, and a large number of transparent electrodes 13 are formed thereon in a stripe pattern at a predetermined pitch.
【００１５】この実施例において、各透明電極１３はＩ
ＴＯ（Ｉｎｄｉｕｍ Ｔｉｎ Ｏｘｉｄｅ：酸化錫薄
膜）からなり、スパッタ法や蒸着法などによって形成さ
れる。液晶表示用としては、その単位面積あたりの膜抵
抗値はＪＩＳ四端子法で測定して、１〜１×１０３Ω／
□が好ましいとされている。In this embodiment, each transparent electrode 13 is
It is made of TO (Indium Tin Oxide: tin oxide thin film) and is formed by a sputtering method, an evaporation method, or the like. For liquid crystal display, the film resistance per unit area is measured by a JIS four-terminal method and is 1 to 1 × 10 3 Ω /.
□ is preferred.
【００１６】この透明電極基板１０の透明電極（ＩＴＯ
パターン）１３を検査するにあたって、一対の通電電極
２１，２１が用いられる。この通電電極２１は各ＩＴＯ
パターン１３に跨る長さを有し、その各々が透明電極基
板１０の両端に配置される。The transparent electrode (ITO) of the transparent electrode substrate 10
In inspecting the pattern 13, a pair of conducting electrodes 21 and 21 are used. This current-carrying electrode 21 is made of ITO
It has a length that extends over the pattern 13, each of which is disposed at both ends of the transparent electrode substrate 10.
【００１７】この例では、通電電極２１として、硬度が
数１０程度のゴム材の周りに銀箔を巻き付けたものが用
いられ、各通電電極２１は直流もしくは交流の電源部２
２に接続される。その電源電圧は、ＩＴＯパターン１３
が溶断しない範囲で設定されるが、１０数Ｖ〜数１０Ｖ
であることが好ましい。In this example, the current-carrying electrodes 21 are formed by winding silver foil around a rubber material having a hardness of about several tens.
2 is connected. The power supply voltage of the ITO pattern 13
Is set within a range that does not cause fusing, but several tens V to several tens V
It is preferred that
【００１８】通電電極２１，２１を透明電極基板１０の
両端に配置して、各ＩＴＯパターン１３相互を短絡させ
た状態で、電源部２２より給電すると、各ＩＴＯパター
ン１３に抵抗熱が発生し、これに伴なって赤外線が発生
する。When power is supplied from the power supply unit 22 in a state where the current-carrying electrodes 21 and 21 are arranged at both ends of the transparent electrode substrate 10 and the respective ITO patterns 13 are short-circuited, resistance heat is generated in each of the ITO patterns 13. Accompanying this, infrared rays are generated.
【００１９】本発明では、このようにして各ＩＴＯパタ
ーン１３から発生する赤外線を赤外線センサ２３にて撮
像する。この場合、赤外線センサ２３としては、ＩｎＳ
ｂやＨｇＣｄＴｅなどを利用した半導体赤外線センサが
好適であり、図３に模式的に示されているように、その
受光面２３ａには多数の受光素子がマトリクス状に配列
されている。In the present invention, infrared rays generated from each ITO pattern 13 are imaged by the infrared sensor 23 in this manner. In this case, as the infrared sensor 23, InS
A semiconductor infrared sensor using b, HgCdTe, or the like is preferable. As schematically shown in FIG. 3, a large number of light receiving elements are arranged in a matrix on the light receiving surface 23a.
【００２０】図４に示されているように、赤外線センサ
２３にて撮像された画像データは良否判別手段２４に入
力され、同良否判別手段２４にて基準画像データと比較
される。良否判別手段２４は、例えばＣＰＵ（ｃｅｎｔ
ｒａｌ ｐｒｏｃｅｓｓｉｎｇ ｕｎｉｔ）からなり、
あらかじめ設定された所定のプログラムにしたがって画
像データを解析処理する。As shown in FIG. 4, the image data picked up by the infrared sensor 23 is inputted to the pass / fail judgment means 24, and is compared with the reference image data by the pass / fail judgment means 24. The pass / fail determination means 24 is, for example, a CPU (cent
ral processing unit)
The image data is analyzed according to a predetermined program set in advance.
【００２１】基準画像データは、例えばＲＡＭ（ｒａｍ
ｄｏｍ ａｃｃｅｓｓ ｍｅｍｏｒｙ）からなる記憶部
２５に書き込まれている。この実施例において、基準画
像データには、あらかじめ良品と確認された透明電極基
板１０に通電し、同透明電極基板１０から発生した赤外
線による画像データが用いられている。The reference image data is, for example, RAM (ram)
dom access memory). In this embodiment, as the reference image data, image data based on infrared rays generated from the transparent electrode substrate 10 by applying a current to the transparent electrode substrate 10 which has been previously confirmed as a non-defective product is used.
【００２２】ここで、記憶部２５に基準画像データが格
納されているものとして、本発明の動作を説明する。製
品基板としての透明電極基板１０の両端に通電電極２
１，２１を配置して、電源部２２より各ＩＴＯパターン
１３に電流を流す。Here, the operation of the present invention will be described assuming that the reference image data is stored in the storage unit 25. Conductive electrodes 2 are provided at both ends of a transparent electrode substrate 10 as a product substrate.
1 and 21 are arranged, and a current flows from the power supply unit 22 to each ITO pattern 13.
【００２３】これにより、各ＩＴＯパターン１３に抵抗
熱が発生し、これに伴って赤外線が発生する。この赤外
線を赤外線センサ２３にて撮像する。赤外線センサ２３
からその画像データが製品画像データとして良否判別手
段２４に入力される。As a result, resistive heat is generated in each of the ITO patterns 13, and accordingly, infrared rays are generated. This infrared ray is imaged by the infrared sensor 23. Infrared sensor 23
Is input to the pass / fail determination means 24 as product image data.
【００２４】そして、良否判別手段２４において、その
製品画像データと基準画像データとが対比され、その結
果、製品画像データと基準画像データとが一致していれ
ば、モニタなどの表示手段２６に例えば「ＯＫ（良
品）」の表示がなされる。Then, the product image data and the reference image data are compared in the pass / fail determination means 24. As a result, if the product image data and the reference image data match, for example, "OK (non-defective)" is displayed.
【００２５】これに対して、図１のＡ部に示すように、
断線しているＩＴＯパターン１３がある場合には、その
ＩＴＯパターン１３には電流が流れず、そこからは赤外
線が発生しない。On the other hand, as shown in part A of FIG.
When there is a broken ITO pattern 13, no current flows through the ITO pattern 13, and no infrared rays are generated therefrom.
【００２６】したがって、その製品画像データと基準画
像データとを対比することにより断線有りと判定され、
表示手段２６に例えば「ＮＧ（不良品）」の表示がなさ
れる。この場合、製品画像データと基準画像データとの
対比により、その断線発生箇所も分かるため、表示手段
２６の表示を例えば「第ｘ番目のＩＴＯパターン断線有
り」とすることもできる。Therefore, by comparing the product image data with the reference image data, it is determined that there is a disconnection,
For example, “NG (defective product)” is displayed on the display unit 26. In this case, since the location of the disconnection can be determined by comparing the product image data with the reference image data, the display on the display means 26 can be set to, for example, "the x-th ITO pattern disconnection exists".
【００２７】また、図１のＢ部に示すように、ＩＴＯパ
ターン１３間に短絡（リーク）箇所がある場合には、本
来パターンのない部分からも赤外線が発生することにな
るため、その製品画像データと基準画像データとの対比
により、短絡箇所有りと判定され、断線の場合と同様
に、表示手段２６に例えば「ＮＧ（不良品）」もしくは
「第ｘ番目と第ｘ＋１番目のＩＴＯパターン間に短絡有
り」などの表示がなされる。As shown in part B of FIG. 1, when there is a short-circuit (leak) portion between the ITO patterns 13, since infrared rays are also generated from a portion having no pattern, the product image Based on the comparison between the data and the reference image data, it is determined that there is a short-circuit portion, and as in the case of a disconnection, the display means 26 displays, for example, "NG (defective product)" or "between the x-th and x + 1-th ITO patterns. A display such as "short circuit is present" is made.
【００２８】このように、本発明によれば、赤外線セン
サ２３の分解能にもよるが、今までの検査技術では見逃
されていた数１０μｍオーダーのきわめて細かな断線箇
所や短絡箇所までも確実に検査することができる。As described above, according to the present invention, although it depends on the resolution of the infrared sensor 23, it is possible to surely inspect even a very small broken or short-circuited part of the order of several tens of μm which has been overlooked by the conventional inspection technology. can do.
【００２９】なお、上記実施例では、ＩＴＯパターン１
３をパターニングした直後の透明電極基板１０を検査対
象としているが、本発明によれば、ＩＴＯパターン１３
の上にさらに絶縁膜（ＭＩＣ）や配向膜を形成したもの
であっても検査可能である。In the above embodiment, the ITO pattern 1
The inspection is performed on the transparent electrode substrate 10 immediately after the patterning of the ITO pattern 13 according to the present invention.
Inspection is possible even if an insulating film (MIC) or an alignment film is further formed on the substrate.
【００３０】また、上記実施例では、ストライプ状のＩ
ＴＯパターンを検査するようにしているが、本発明はこ
ればかりでなく、例えばセグメント表示のＩＴＯパター
ンについても、その断線・短絡およびパターン形状の適
否などを検査することができる。さらに、本発明は透明
電極基板以外の回路基板、例えば銅張り積層板から作ら
れた回路基板の配線パターンの検査にも適用可能であ
る。In the above embodiment, the stripe-shaped I
Although the TO pattern is inspected, the present invention can inspect not only this, but also, for example, the disconnection / short circuit and the appropriateness of the pattern shape of the segment display ITO pattern. Further, the present invention is applicable to inspection of a wiring pattern of a circuit board other than the transparent electrode board, for example, a circuit board made of a copper-clad laminate.
【００３１】[0031]
【実施例】セグメント（ＳＥＧ）側マザー基板およびコ
モン（ＣＯＭ）側マザー基板として、厚さ０．７ｍｍ，
縦・横寸法４８０×３５０ｍｍのガラス基板を２枚用意
し、その各々の電極パターン形成面に、アルカリ保護膜
としてのＳｉＯ２を数１００Åのオーダーで形成した。DESCRIPTION OF THE PREFERRED EMBODIMENTS A segment (SEG) side mother board and a common (COM) side mother board have a thickness of 0.7 mm.
Two glass substrates having a vertical and horizontal dimension of 480 × 350 mm were prepared, and SiO 2 as an alkali protective film was formed on each electrode pattern forming surface in the order of several hundreds of degrees.
【００３２】次に、ＳＥＧ側マザー基板を６面取り（マ
ルチ度：６）として、その一つの面につき、線幅６６μ
ｍ，線間スペース１３μｍに設定してストライプ状のＩ
ＴＯパターンを１９２０本形成した。Next, the mother substrate on the SEG side was formed into six chamfers (multi degree: 6), and a line width of 66 μm
m, the space between lines is set to 13 μm,
1920 TO patterns were formed.
【００３３】また、ＣＯＭ側マザー基板についても、６
面取り（マルチ度：６）として、その一つの面につき、
線幅２２４μｍ，線間スペース１３μｍに設定してスト
ライプ状のＩＴＯパターンを４８０本形成した。なお、
両マザー基板ともに、ＩＴＯパターンの厚さは２０００
Åで、その単位面積あたりの抵抗値は１０Ω／□であっ
た。Further, regarding the mother board on the COM side, 6
As one chamfer (multi degree: 6),
A line width of 224 μm and a space between lines of 13 μm were set, and 480 striped ITO patterns were formed. In addition,
The thickness of the ITO pattern on both mother substrates is 2000
In 値, the resistance value per unit area was 10Ω / □.
【００３４】しかる後、両マザー基板のＩＴＯパターン
上にそれぞれ、絶縁層（ＭＩＣ）として触媒化成社製の
ＰＡＭ６０６Ｌ（商品名）を５００Å、配向膜として日
産化学社製のＳＥ３８４０（商品名）を４００Å順次形
成した。Thereafter, PAM606L (trade name) manufactured by Catalyst Kasei Co., Ltd. was used as an insulating layer (MIC) at 500 ° and SE3840 (trade name) manufactured by Nissan Chemical Co., Ltd. was used at 400 ° as an alignment layer on the ITO patterns of both mother substrates. Formed sequentially.
【００３５】検査装置として、厚さおよび幅がともに１
０ｍｍで、長さ２００ｍｍのＪＩＳ硬さ６０の加硫ゴム
棒に銀箔を巻き付けた通電電極を２本、最大１００Ｖの
可変直流電源、そして浜松フォトニクス社製の赤外線カ
メラ（Ｃ２７４１）を用意した。As the inspection device, both the thickness and the width are 1
Two current-carrying electrodes each having silver foil wound around a vulcanized rubber rod having a length of 200 mm and a JIS hardness of 200 mm, a variable DC power supply having a maximum of 100 V, and an infrared camera (C2741) manufactured by Hamamatsu Photonics were prepared.
【００３６】そして、ＳＥＧ側マザー基板およびＣＯＭ
側マザー基板ともに、一つの面（１シート）ごとに通電
電極を接触させて電源よりＩＴＯパターンに電流を流
し、赤外線センサで撮像して断線・短絡の有無を検査し
た。Then, the mother substrate on the SEG side and the COM
With the side mother board, a current-carrying electrode was brought into contact with each surface (one sheet), a current was passed from the power supply to the ITO pattern, and an image was taken with an infrared sensor to check for disconnection / short circuit.
【００３７】その結果、ＩＴＯパターン上に絶縁層と配
向膜が形成されているにも関わらず、断線については１
０μｍ以下の細いものまで検出できた。また、線間スペ
ース１３μｍ間の短絡ついても同じく良好に検出でき
た。As a result, although the insulating layer and the alignment film were formed on the ITO pattern, the disconnection was 1
As thin as 0 μm or less could be detected. In addition, a short circuit between line spaces of 13 μm was similarly well detected.
【００３８】検査時間については、１シートあたり平均
で約１６秒であった。ちなみに、比較例としてＯＳチェ
ッカーにて検査したところ、その検査時間は１シートあ
たり平均で約１分であった。The inspection time was about 16 seconds per sheet on average. By the way, as a comparative example, when the inspection was performed by the OS checker, the inspection time was about 1 minute per sheet on average.
【００３９】[0039]
【発明の効果】以上説明したように、本発明によれば、
基板上に形成されている配線パターンに通電し、その時
に発生する赤外線を赤外線センサで撮像して、その画像
データにより配線パターンの良否を検査するようにした
ことにより、透明電極などの見えにくい配線パターンで
あっても、非接触にて確実、かつ、短時間にその良否判
別を行なうことができる。As described above, according to the present invention,
By energizing the wiring pattern formed on the substrate, the infrared light generated at that time is imaged by an infrared sensor, and the quality of the wiring pattern is inspected based on the image data, so that wiring such as transparent electrodes is difficult to see. Even in the case of a pattern, the quality can be determined in a non-contact manner in a short time.
【図１】被検査回路基板を液晶表示パネル用の透明電極
基板とした本発明の実施例を示した模式図。FIG. 1 is a schematic diagram showing an embodiment of the present invention in which a circuit substrate to be inspected is a transparent electrode substrate for a liquid crystal display panel.
【図２】上記透明電極基板の断面図。FIG. 2 is a cross-sectional view of the transparent electrode substrate.
【図３】上記実施例で用いている赤外線センサの受光面
の構成を示した模式図。FIG. 3 is a schematic diagram showing a configuration of a light receiving surface of the infrared sensor used in the embodiment.
【図４】本発明の検査装置の一実施例の構成を概略的に
示したブロック図。FIG. 4 is a block diagram schematically showing a configuration of an embodiment of the inspection apparatus of the present invention.
１０ 透明電極基板（被検査回路基板） １１ ガラス基板 １３ ＩＴＯパターン（配線パターン） ２１ 通電電極 ２２ 電源部 ２３ 赤外線センサ ２４ 良否判別手段（ＣＰＵ） ２５ 記憶部 ２６ 表示手段 REFERENCE SIGNS LIST 10 transparent electrode substrate (circuit board to be inspected) 11 glass substrate 13 ITO pattern (wiring pattern) 21 energized electrode 22 power supply unit 23 infrared sensor 24 pass / fail determination unit (CPU) 25 storage unit 26 display unit
Claims (6)
通電して、同配線パターンより赤外線を発生させ、赤外
線センサでその赤外線を撮像し、同撮像信号を画像処理
して所定の基準画像データと対比することにより、上記
配線パターンの良否を検査することを特徴とする配線パ
ターン検査方法。An electric current is supplied to a wiring pattern formed on a substrate, infrared rays are generated from the wiring pattern, the infrared ray is imaged by an infrared sensor, and the image signal is image-processed to obtain predetermined reference image data. A wiring pattern inspection method for inspecting the quality of the wiring pattern by comparing with the above.
と確認された配線パターンに通電して同配線パターンか
ら発せられた赤外線を上記赤外線センサで撮像して画像
処理したものであることを特徴とする請求項１に記載の
配線パターン検査方法。2. The method according to claim 1, wherein the reference image data is obtained by applying an electric current to a wiring pattern that has been confirmed in advance as a non-defective product and imaging the infrared rays emitted from the wiring pattern by the infrared sensor to perform image processing. The wiring pattern inspection method according to claim 1.
れた透明電極であることを特徴とする請求項１または２
に記載の配線パターン検査方法。3. The method according to claim 1, wherein the wiring pattern is a transparent electrode formed on a transparent substrate.
The wiring pattern inspection method according to 1.
所定の電流を供給する電源部と、同電源部からの給電に
より上記配線パターンから発生する赤外線を撮像する赤
外線センサと、同赤外線センサの撮像信号を画像処理す
るとともに、所定の基準画像データと対比して、上記配
線パターンの良否を判別する良否判別手段とを備えてい
ることを特徴とする配線パターン検査装置。4. A power supply for supplying a predetermined current to a wiring pattern formed on a substrate, an infrared sensor for imaging infrared rays generated from the wiring pattern by power supply from the power supply, and an infrared sensor for the infrared sensor. A wiring pattern inspection apparatus that performs image processing of an image pickup signal, and includes a quality determination unit that determines the quality of the wiring pattern by comparing the imaging signal with predetermined reference image data.
列された多数の受光素子を備えていることを特徴とする
請求項４に記載の配線パターン検査装置。5. The wiring pattern inspection device according to claim 4, wherein the infrared sensor includes a large number of light receiving elements arranged in a matrix.
と確認された配線パターンに通電して同配線パターンか
ら発せられた赤外線を上記赤外線センサで撮像して画像
処理したものであることを特徴とする請求項４または５
に記載の配線パターン検査装置。6. The reference image data is obtained by energizing a wiring pattern that has been confirmed in advance as a non-defective product and imaging the infrared rays emitted from the wiring pattern by the infrared sensor to perform image processing. Claim 4 or 5
The wiring pattern inspection device according to 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14529898A JP3765519B2 (en) | 1998-05-27 | 1998-05-27 | Wiring pattern inspection method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14529898A JP3765519B2 (en) | 1998-05-27 | 1998-05-27 | Wiring pattern inspection method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11337454A true JPH11337454A (en) | 1999-12-10 |
| JP3765519B2 JP3765519B2 (en) | 2006-04-12 |
Family
ID=15381920
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14529898A Expired - Fee Related JP3765519B2 (en) | 1998-05-27 | 1998-05-27 | Wiring pattern inspection method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3765519B2 (en) |
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| CN103018163A (en) * | 2011-09-21 | 2013-04-03 | 技嘉科技股份有限公司 | Fault detection method and fault detection device |
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