CN103890596A - Wire inspection method, and wire inspection device - Google Patents
Wire inspection method, and wire inspection device Download PDFInfo
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- CN103890596A CN103890596A CN201280052749.XA CN201280052749A CN103890596A CN 103890596 A CN103890596 A CN 103890596A CN 201280052749 A CN201280052749 A CN 201280052749A CN 103890596 A CN103890596 A CN 103890596A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136254—Checking; Testing
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- Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
Abstract
A wire inspection method for determining whether or not a wire formed on a substrate has a short-circuit defect part (20), the method involving a heating step (S3 to S6) for heating the short-circuit defect part (20) by applying a voltage to the wire, an image acquisition step (S2 to S5) for acquiring an infrared image at multiple times by imaging the substrate, a heating region recognition step (S8) for recognizing a heating region (21) by using the infrared image at a predetermined time, a heating region determination step (S9) for determining whether it is possible to identify the position of the short-circuit defect part (20) in the heating region (21), and a defect position identification step (S10) for identifying the position of the short-circuit defect part (20) in the heating region (21), wherein the heating region recognition step is characterized by recognizing the heating region (21) by using the infrared image at a time that is different from the predetermined time when it is determined that it is not possible to identify the position of the short-circuit defect part (20) in the heating region recognition step.
Description
Technical field
The present invention relates to be applicable to the active-matrix substrate used at liquid crystal indicator such as, organic EL display or as solar cell panel etc., be formed with the distribution inspection method and the distribution testing fixture that in the substrate of multiple distributions, detect the circuit defect of distribution.
Background technology
In general, active-matrix substrate or the substrate that is formed with multiple distributions are used to the various product scopes such as liquid crystal indicator, organic EL (Electro Luminescence: electroluminescence) display device, solar cell panel.For example, liquid crystal indicator have as be formed with multiple distributions, pictorial element electrode and on-off element etc. side's substrate component active-matrix substrate and as the colored filter substrate of the opposing party's substrate component that is formed with comparative electrode, colored filter.By above-mentioned 2 substrate laminatings spaced apart, in gap, inject liquid crystal material and form after liquid crystal layer, peripheral circuit parts are installed and are manufactured liquid crystal indicator.
Active-matrix substrate, in its manufacturing process, produces the defect such as broken string, short circuit of the distribution on substrate sometimes.This defect is the reason of the display defect of liquid crystal indicator.Defective for display defect of reducing liquid crystal indicator etc., before the operation of above-mentioned injection liquid crystal material, need detect the defect of active-matrix substrate and repair.
Fig. 8 is the testing fixture of patent documentation 1 disclosed Wiring pattern.The testing fixture of patent documentation 1 utilizes powered electrode 61 to switch on to the Wiring pattern 53 being formed on substrate 50, heating by Wiring pattern 53 produces infrared ray, with infrared ray sensor 63 its infrared views of shooting, carry out image processing to taking signal, benchmark image Data Comparison with regulation, checks that whether Wiring pattern 53 is qualified thus.For example, in the A of Fig. 8 portion, there is broken string in distribution and therefore circulating current not comprises that the distribution 53 of A portion does not generate heat.In addition, in the B of Fig. 8 portion, distribution is short-circuited, and in short circuit portion also circulating current, therefore also can produce infrared ray from distribution 53 part in addition.
In addition, Fig. 9 is the testing fixture of patent documentation 2 disclosed active-matrix substrates.The testing fixture of patent documentation 2 detects the circuit defect 73 in the sweep trace 81～85 of active-matrix substrate and the generation of the point of crossing of signal wire 91～95.
Between the sweep trace 81～85 of active-matrix substrate and signal wire 91～95, be insulated, if normal, even can circulating current to applying voltage between sweep trace 81～85 and signal wire 91～95 yet.And for example when there is circuit defect 73 between sweep trace 83 and signal wire 93 time, by circuit defect 73 circulating current between sweep trace 83 and signal wire 93, produce heating and emit infrared ray.
Therefore, to applying voltage between sweep trace 81～85 and signal wire 91～95, take infrared view, can according to having or not of heating region detect circuit defect have or not differentiate qualifiedly, or detect the position of circuit defect 73.
prior art document
patent documentation
Patent documentation 1: Japan's publication communique " Unexamined Patent 11-337454 communique "
Patent documentation 2: Japan's publication communique " Unexamined Patent 6-51011 communique "
Summary of the invention
the problem that invention will solve
But according to the inspection method of patent documentation 1, the existing infrared view of the disclosed employing of patent documentation 2, when circulating current in distribution and circuit defect portion and adstante febre, due to heat conduction, region in its vicinity also can temperature rise produce infrared ray.Therefore, in the situation that distribution number is fewer, can determine according to heating region the position of circuit defect portion, but as distribution number so high-resolution LCD TV etc. is many, in the substrate of the fine and close formation of distribution, in the heating region detecting, also can comprise normal distribution, distribution cross part etc. together with circuit defect portion, circuit defect portion is overshadowed in heating region, therefore according to existing inspection, existence cannot be determined the problem of the position of circuit defect portion exactly.
The object of the invention is to, take multiple infrared views, extract the image that is suitable for determining defective locations, determine exactly the position of circuit defect portion.
for the scheme of dealing with problems
Distribution inspection method of the present invention is to check that the distribution that is formed at substrate has or not the distribution inspection method of circuit defect portion, it is characterized in that, comprising: heating operation, applies voltage to distribution and make the heating of circuit defect portion; Image is obtained operation, takes substrate and obtains infrared view separately of multiple moment; Heating region identification operation, identifies heating region with the infrared view in regulation moment; Heating region judges operation, and can judgement determine the position of circuit defect portion according to heating region; And defective locations is determined operation, determine the position of circuit defect portion according to heating region, and, when judging that at heating region while being judged as the position that cannot determine circuit defect portion in operation, heating region identification operation uses the infrared view in other moment different from the regulation moment to identify heating region.
In addition, it is characterized in that, heating region judges that operation calculates and evaluates the big or small characteristic quantity of heating region, when in the scope of characteristic quantity in regulation, is judged as the position that can determine circuit defect portion.
In addition, it is characterized in that, characteristic quantity corresponding in the heating width of the area calculating according to heating region or the distribution that calculates according to heating region at least any.
In addition, it is characterized in that, when characteristic quantity is than the scope hour of regulation, heating region identification operation is used the infrared view in the moment more late than the regulation moment.
In addition, it is characterized in that, in the time that characteristic quantity is larger than the scope of regulation, heating region identification operation is used the infrared view in the moment more Zao than the regulation moment.
In addition, it is characterized in that thering is the resistance measurement operation of the resistance value of measuring distribution, change regulation moment and other moment of infrared view according to resistance value.
Distribution testing fixture of the present invention is to check that the distribution that is formed at substrate has or not the distribution testing fixture of circuit defect portion, it is characterized in that, comprising: heat-generating units, and it applies voltage to distribution and makes the heating of circuit defect portion; Image is obtained unit, and it is taken substrate and obtains infrared view separately of multiple moment; Heating region recognition unit, its infrared view with the regulation moment is identified heating region; Heating region judging unit, can its judgement determine the position of circuit defect portion according to heating region; And defective locations determining unit, it determines the position of circuit defect portion according to heating region, and, when be judged as the position that cannot determine circuit defect portion in heating region judging unit time, heating region recognition unit uses the infrared view in other moment different from the regulation moment to identify heating region.
In addition, it is characterized in that possessing the resistance measurement unit of the resistance value of measuring distribution, change regulation moment and other moment of infrared view according to measured resistance value.
Distribution scrutiny program of the present invention is the distribution scrutiny program of carrying out above-mentioned distribution inspection method, it is characterized in that, makes the function of the above-mentioned each operation of computing machine performance.
Program recorded medium of the present invention is characterised in that, records the above-mentioned distribution scrutiny program of embodied on computer readable.
invention effect
According to the present invention, can take multiple infrared views, extract the image that is suitable for determining defective locations, determine exactly the position of circuit defect portion.
Brief description of the drawings
Fig. 1 is the schematic diagram that the distribution testing fixture of embodiments of the present invention is shown.
Fig. 2 is the block diagram of the formation of the distribution testing fixture for embodiments of the present invention are described.
Fig. 3 is the check process figure that the distribution inspection method of embodiments of the present invention is shown.
Fig. 4 is the figure that the image table of the related infrared view of preserving per moment of embodiments of the present invention is shown.
Fig. 5 is the figure that makes the overlapping expression of infrared view in related per moment of embodiments of the present invention.
Fig. 6 is the schematic diagram illustrating the image after the infrared view binaryzation in per moment related embodiments of the present invention.
Fig. 7 is the key diagram that related according to the embodiment of the present invention binary image is determined circuit defect position.
Fig. 8 is the figure of the testing fixture for prior art is described.
Fig. 9 is the figure of the testing fixture for prior art is described.
Embodiment
Below, describe embodiments of the present invention in detail referring to figs. 1 through the accompanying drawing shown in Fig. 7.In addition,, in accompanying drawing of the present invention, identical Reference numeral represents identical part or considerable part.
(embodiment 1)
Fig. 1 is the schematic diagram of the distribution testing fixture 1 of an embodiment of the invention.Distribution testing fixture 1 comprises that signal provides portion 2, infrared ray dynamic image shoot part 3, image processing part 4 and center-control portion 5.The substrate component 14 checking is loaded in mounting table 15, is placed with connecting portion 6 thereon.Be provided with in the bottom surface of connecting portion 6 with the portion of terminal of the distribution of substrate component 14 and realize the multiple probes (contact pin) that conduct.Provide portion 2 to apply voltage by connecting portion 6 to substrate component 14 from signal, and utilize infrared ray dynamic image shoot part 3 to take surperficial infrared view in the mode of dynamic image.
Fig. 2 is the figure of the formation for distribution testing fixture 1 is described.Distribution testing fixture 1 utilizes center-control portion 5 control signals that portion 2, infrared ray dynamic image shoot part 3, image processing part 4 are provided, and detects the defects such as the short circuit that produces in the distribution of substrate component 14, determines the position of this defect.
Voltage application portion 7 and resistance measurement portion 8 that signal provides portion 2 to have connecting portion 6, be connected with connecting portion 6.Voltage application portion 7 is the power supplys that by connecting portion 6, the distribution of substrate component 14 applied fixing voltage.In addition, in the present embodiment, describe with the electrifying method that adopts the such constant voltage source of voltage application portion 7, utilized the electrifying method of constant current source to make the heating of circuit defect portion but also can adopt.
Infrared ray dynamic image shoot part 3 has infrared image shoot part 9 and infrared image storage part 10.Infrared image shoot part 9 is for example infrared camera, and seizure forms infrared view from the infrared ray of the surface emissivity of substrate component 14.The infrared view of taking with infrared image shoot part 9 is for example sent to computing machine, carries out as required analog/digital conversion, offers infrared image storage part 10.Infrared image storage part 10 is to be stored in the memory storage of image table with multiple infrared views that infrared image shoot part 9 was taken by per moment.In addition, in the present embodiment, the situation that infrared view is taken as dynamic image has been described, but the invention is not restricted to this, infrared view can be dynamic image or the rest image taken by time series.
Image processing part 4 has heating region identification part 11, heating region judging part 12 and defective locations determination portion 13.Heating region identification part 11 is the infrared view identification heating region in moment according to the rules, for example, removes ground unrest and identifies heating region thereby infrared view is carried out to binary conversion treatment with the threshold temperature specifying.Heating region judging part 12 judges that the heating region that identified by heating region identification part 11 is whether in the time determining the position of circuit defect portion in the scope of the best.Defective locations determination portion 13 is according to the position that is judged as best heating region and determines circuit defect portion.
Fig. 3 is the check process figure that the distribution inspection method of an embodiment of the invention is shown.Describe inspection method of the present invention in detail by the order of the step of the S1 to S10 shown in Fig. 3.In addition, distribution inspection method is by sequencing and be recorded in recording medium, is saved in the mode of embodied on computer readable.
In the check process of present embodiment, take multiple infrared views, extract the image that is suitable for the position of determining circuit defect portion, determine exactly the position of circuit defect portion.
Step S1 is for the distribution of substrate component 14 is executed to alive preparation, and the probe of connecting portion 6 is contacted with the distribution terminal of substrate component 14, and voltage application portion 7 is electrically connected with distribution terminal.
In step S2, utilize image pickup section 9, start the shooting of the infrared view on substrate component 14 surfaces.Take infrared view as dynamic image or take continuously as rest image.In addition, be before voltage applies at the beginning time point of step S2, therefore also can take the infrared view under athermic state.
In step S3, by connecting portion 6, the wiring closet of substrate component 14 is started to apply voltage from voltage application portion 7.Apply voltage according to the resistance value of distribution, circuit defect portion and difference is for example the DC voltage of 50V.
In step S4, apply from voltage start finish the shooting of infrared view the stipulated time.The so-called stipulated time is to have by the applying voltage of step S3 the time that produces enough heatings in circuit defect portion situation at the wiring closet of substrate component 14, for example, apply from voltage start through within 2 seconds, finishing the shooting of infrared view after degree.
In step S5, be temporarily saved in image storage part 10 as image table 18 using step S2 to whole multiple infrared views of taking between step S4.At this, obtain operation using step S2 to step S5 as image.In addition, as shown in Figure 4, image table 18 for example saves as moment 18a (Tn) and the corresponding table of infrared view 18b (IMGn) by the infrared view of taking by per moment.
In step S6, finish the voltage of wiring closet to apply.At this, step S3 is made as to heating operation to step S6.The order of this step S6 and step S5 can be put upside down, also can executed in parallel.In addition, the data volume of infrared view more, preserve and need spended time, also can the voltage of wiring closet be applied FEFO, to obtaining the effect that alleviates the hot burden that substrate component 14 is applied.
Step S7 to S10 is the operation in image processing part 4, selects to be suitable for from multiple infrared views the infrared view that distribution checks, real-time image processing carries out determining of defective locations.
In step S7, select the infrared view IMGn in regulation moment from image table 18, send to heating region identification part 11.At this, the so-called regulation moment refers to moment Tn, and moment Tn is by initial setting in advance.Therefore in step S7, the infrared view IMGn of the moment Tn of initial setting is sent to heating region identification part 11 in advance.As long as the establishing method of moment Tn is for example set in the average moment that distribution and defective part is applied to appropriateness heating after voltage.
Step S8 is the heating region identification operation of the infrared view in regulation moment being carried out image processing and identified heating region in heating region identification part 11.At first, in order to remove the ground unrest beyond heating region, the infrared view in moment generates binary image using set point of temperature as threshold value according to the rules.Then, according to evaluating the having or not of heating region, area by the binary image of the identifications such as computing machine.In addition, carry out at first the processing of step S7 infrared view to as if the infrared view IMGn of the moment Tn of initial setting.
At this, supplement about heating region and radiance, in general, the temperature that infrared camera is measured is subject to the impact of the radiance of subject.On substrate, comprise the different materials of the radiances such as wiring material such as glass, chromium, aluminium, copper.Therefore, the substrate temperature on the substrate of mensuration is can whole face all not the same, in order to take accurately heating region, the impact that need to remove radiance.Therefore, also can become binary image next life according to the temperature variation image of the infrared view of having obtained the regulation moment and the difference of the infrared view before voltage applies.
Step S9 judges the position that whether can determine according to the heating region of identifying circuit defect portion in heating region judging part 12 in step S8.Below with Fig. 5 and Fig. 6, the reason that need to carry out this judgement is described.
Fig. 5 illustrates an example taking the infrared view obtaining by per moment to applying by voltage from the substrate component 14 of circuit defect portion 20 generation heatings.Substrate component 14 is for example liquid crystal panel active-matrix substrate used, on directions X multiple distribution R arranged side by side and in the Y direction distribution L arranged side by side intersect across insulator.Be formed with for example thin film transistor (TFT) (TFT:Thin Film Transistor) in each crossover sites as not shown on-off element.At this, the cross part that is illustrated in X distribution RX of directions X and X distribution LX of Y-direction produces the example of circuit defect portion 20.In addition,, for easy understanding, in infrared view, make distribution R and the overlapping demonstration of distribution L.
In addition, infrared view IMG1～IMG5 changes hachure kind for each heating region and represents, correspond respectively to from voltage apply start moment T1～T5 after 0.05 second, after 0.1 second, after 0.2 second, after 0.3 second, after 1 second.
The heating that distribution RX, LX and circuit defect portion 20 produce is according to joule rule, proportional with the quadratic sum time of resistance, electric current.Flow through distribution RX, LX identical with the electric current of circuit defect portion 20, the circuit defect portion 20 that therefore resistance is large easily generates heat than distribution RX, LX.Therefore, in the time just applying voltage, start heating as infrared view IMG1 near of circuit defect portion 20, heating region is pressed resistance order from big to small and is expanded to distribution RX, LX.
In the time that the application time of voltage is elongated, the heating of distribution RX, LX is conducted the also each distribution direction to distribution RX, LX, the expansion of each distribution Width by heat.For example, in the heating region of the moment T5 after 1 second, as shown in infrared view IMG5, except circuit defect portion 20 and distribution RX, LX, also comprise near distribution it etc.
Fig. 6 is the schematic diagram that generates respectively discernible binary images (a) such as computing machine～(d) according to infrared view IMG1～IMG5.Infrared view IMG1 becomes the appearance of binary image (a), and heating region 21 is only identified near of circuit defect portion 20, due to too small and likely omit or misidentification.In addition, infrared view IMG2 also becomes the appearance of binary image (b), and the heating region 21 of distribution RX is split into multiple in the mode of the style of calligraphy characterized by hollow strokes, likely think respectively it by mistake circuit defect portion 20.
In addition, infrared view IMG5 becomes the appearance of binary image (d), and heating region 21 and circuit defect portion 20 are excessive from distribution RX, LX expansion, and circuit defect portion 20 is covered by heating region, is difficult to determine the position of circuit defect portion 20.
On the other hand, infrared view IMG3, IMG4 become the appearance of binary image (c), can not omit heating region 21, and circuit defect portion 20 can not be overshadowed in heating region, are identified with appropriate size.
Like this, identify heating region according to the infrared view based on which kind of moment, can greatly change the easy degree of the location positioning of the circuit defect portion carrying out below.
But, the infrared view IMG3, the IMG4 that expect are the flashy infrared views after 0.2 second, after 0.3 second from voltage applies, in addition, according to resistance value of circuit defect portion 20, distribution etc., the moment that becomes the such state of infrared view IMG3, IMG4 also can change.Therefore therefore, the infrared view in the initial regulation moment of selecting not necessarily can be determined needs the heating region of step S9 to judge operation by the best infrared view of the position of circuit defect portion.
In step S9, judge whether to determine according to the heating region of the binary image shown in Fig. 6 (a)～(d) position of circuit defect portion.For example, calculating the big or small characteristic quantity of evaluating heating region, in the scope of this characteristic quantity in regulation time, be judged as the position that can determine according to heating region circuit defect portion, the defective locations that enters step S10 is determined operation.Characteristic area for example uses the area, heating of heating region and the heating width of the distribution that expands.In addition, predetermine the proper range of regulation according to the so best heating region of Fig. 6 (c).
Depart from the proper range of regulation at characteristic quantity, be judged as and cannot be determined in the situation of position of circuit defect portion by heating region judging part 12, change to the infrared view in other moment different from the regulation moment.
For example, as Fig. 6 (a), Fig. 6 (b), in the situation (situation of characteristic quantity < proper range) that the characteristic quantity of heating region is less than proper range, the regulation moment is changed at rear moment Tn+1, return to step S7.
In addition, for example, as Fig. 6 (d), in the situation (situation of characteristic quantity > proper range) that the characteristic quantity of heating region is larger than proper range, the regulation moment is changed at front moment Tn-1, return to step S7.
The moment that changes to which kind of degree wishes to adjust according to the ratio of the resistance value of circuit defect portion 20 and distribution, resistance.That is, in the time returning to step 7 from step 9, moment from moment Tn has only been changed to 1, but be not limited to 1, the change that also can carry out more than 2 is adjusted.By carrying out large change, there is the effect that can reduce step 7,8,9 re-treatment number of times.
In addition, wish to change according to resistance value the regulation moment of infrared view.In the time that resistance value becomes large, voltage applies the substrate thermal value causing to be reduced.The moment of, taking best infrared view can become late.Therefore, wish that the larger regulation moment of resistance value is more late.On the contrary, the less regulation moment of resistance value more early.
In the time that the characteristic quantity of heating region departs from proper range, return to step S7, reselect the infrared view into the moment after changing, the heating region identification operation of repeating step S8 and the heating region of step S9 judge operation.In addition, for example, in the 2nd later heating region identification operation, use the best infrared view in other moment, in the case of the characteristic quantity of the 2nd heating region roughly fall into more in proper range, also can omit the processing of the 2nd step S9 and the defective locations that enters step S10 is determined operation.
Step S10 is the location positioning operation of determining the position of circuit defect portion 20 according to heating region.Fig. 7 represents the shape example of the heating region identifying according to binary image, utilizes Fig. 7 to carry out the location positioning operation of description of step S10.
The result that inventor tests shows, the shape of heating region is by the resistance value balance of wired electric resistance and circuit defect portion, become the heating shape of the matchstick type shown in Fig. 7 (a), or become the heating shape of the pencil-type shown in Fig. 7 (b).According to the difference of this heating shape, the method for determining position of circuit defect portion 20 also can change.As shown in Fig. 7 (c), the difference of heating shape can be measured by the top from heating region the automatically judgements such as horizontal width cause computing machine.
It is definite that the position of circuit defect portion 20 can utilize binary image to pass through existing image processing method.For example, in the case of the heating shape of matchstick type, can determine by the process of identifying and extract the circular portion on top → calculate center of gravity.In addition, in the case of the heating shape of pencil-type, also can determine by the process of the top pixel of binary image → graph thinning → fine rule.
As mentioned above, according to distribution inspection method of the present invention, can independently extract best heating region from multiple infrared views with the state of distribution, circuit defect portion, easily determine the position of circuit defect portion.Therefore,, in the case of existing with different conducting states multiple circuit defect portion, also can determine position by a distribution inspection.
In addition, can determine position by a distribution inspection, therefore can shorten inspection required time, also can reduce the damage of temperature rise to wiring substrate etc.In addition, the invention is not restricted to above-mentioned embodiment, can in the scope shown in claim, carry out various changes, by different embodiments respectively disclosed technological means suitably combine the embodiment obtaining and be also contained in the scope of technology of the present invention.
Distribution circuit defect in the substrate that the present invention is applicable to detecting active-matrix substrate or being formed with multiple distributions, is not limited to liquid crystal indicator, organic EL display or solar cell panel, can be used for the inspection of various substrates.
In addition, in the present invention, can utilize the logical circuit that is formed on integrated circuit (IC (integrated circuit) chip) to realize signal and provide part or all in the processing of portion 2, image processing part 4, center-control portion 5 with hardware, also can use CPU (central processing unit: central processing unit), MPU (micro processor unit: microprocessor) to realize with software.
And, the object of this invention is to provide in the mode of embodied on computer readable and record as the recording medium of program code (execute form program, intermediate code program, source program) of control program of software of realizing above-mentioned functions, also can read and be recorded in the program code of recording medium and carry out and realize by computing machine (or CPU, MPU).
Recording medium can adopt for example tape, the band class of tape etc., comprise the disks such as soft (Off ロ ッ ピ ー (registered trademark)) dish/hard disk, CD-ROM (compact disc read-only memory: close-coupled compact disc-ROM)/MO (magneto-optical: magneto-optic)/MD (Mini Disc (Mini Disk), registered trademark) the dish class of the CD such as/DVD (digital versatile disk: digital versatile disc)/CD-R (CD Recordable: CD-R), the card such as IC-card (comprising storage card)/light-card class, mask rom/EPROM (erasable programmable read-only memory: Erasable Programmable Read Only Memory EPROM)/EEPROM (electrically erasable and programmable read-only memory: the Electrically Erasable Read Only Memory)/semiconductor memory classes such as flash rom or PLD (Programmable logic device: programmable logic device (PLD)), the logical circuit classes such as FPGA (Field Programmable Gate Array: field programmable gate array) etc.
And, also the software of realizing above-mentioned functions can be uploaded to internet, public servicer etc. and make it addressable, users etc. can, by downloading software, be installed on distribution testing fixture and implement the present invention.
description of reference numerals
1 distribution testing fixture
2 signals provide portion
3 infrared ray dynamic image shoot parts
4 image processing parts
5 center-control portions
6 connecting portions
7 voltage application portion
8 resistance measurement portions
9 infrared image shoot parts
10 infrared image storage parts
11 heating region identification parts
12 heating region judging parts
13 defective locations determination portions
14 substrate components
20 circuit defect portions
21 heating regions
Claims (10)
1. a distribution inspection method, checks that the distribution that is formed at substrate has or not circuit defect portion, it is characterized in that,
Comprise:
Heating operation, applies voltage to above-mentioned distribution and makes the heating of above-mentioned circuit defect portion;
Image is obtained operation, takes aforesaid substrate and obtains infrared view separately of multiple moment;
Heating region identification operation, identifies heating region with the above-mentioned infrared view in regulation moment;
Heating region judges operation, and can judgement determine the position of above-mentioned circuit defect portion according to above-mentioned heating region; And
Defective locations is determined operation, determines the position of above-mentioned circuit defect portion according to above-mentioned heating region,
And when be judged as the position that cannot determine above-mentioned circuit defect portion in above-mentioned heating region judges operation time, above-mentioned heating region identification operation uses the above-mentioned infrared view in other moment different from the afore mentioned rules moment to identify above-mentioned heating region.
2. distribution inspection method according to claim 1, is characterized in that,
Above-mentioned heating region judges that operation calculates the big or small characteristic quantity of evaluating above-mentioned heating region,
When in the scope of above-mentioned characteristic quantity in regulation, be judged as the position that can determine above-mentioned circuit defect portion.
3. distribution inspection method according to claim 2, is characterized in that,
In the heating width of the distribution that above-mentioned characteristic quantity calculates corresponding to the area calculating according to above-mentioned heating region or according to above-mentioned heating region at least any.
4. according to claim 2 or distribution inspection method claimed in claim 3, it is characterized in that,
When above-mentioned characteristic quantity is than the scope hour of afore mentioned rules, above-mentioned heating region identification operation is used the infrared view in the moment more late than the afore mentioned rules moment.
5. according to claim 2 or distribution inspection method claimed in claim 3, it is characterized in that,
In the time that above-mentioned characteristic quantity is larger than the scope of afore mentioned rules, above-mentioned heating region identification operation is used the infrared view in the moment more Zao than the afore mentioned rules moment.
6. distribution inspection method according to claim 1, is characterized in that,
There is the resistance measurement operation of the resistance value of measuring above-mentioned distribution,
Change regulation moment and other moment of above-mentioned infrared view according to above-mentioned resistance value.
7. a distribution testing fixture, checks that the distribution that is formed at substrate has or not circuit defect portion, it is characterized in that,
Comprise:
Heat-generating units, it applies voltage to above-mentioned distribution and makes the heating of above-mentioned circuit defect portion;
Image is obtained unit, and it is taken aforesaid substrate and obtains infrared view separately of multiple moment;
Heating region recognition unit, its above-mentioned infrared view with the regulation moment is identified heating region;
Heating region judging unit, can its judgement determine the position of above-mentioned circuit defect portion according to above-mentioned heating region; And
Defective locations determining unit, it determines the position of above-mentioned circuit defect portion according to above-mentioned heating region,
And when be judged as the position that cannot determine above-mentioned circuit defect portion in above-mentioned heating region judging unit time, above-mentioned heating region recognition unit uses the above-mentioned infrared view in other moment different from the afore mentioned rules moment to identify above-mentioned heating region.
8. distribution testing fixture according to claim 7, is characterized in that,
Possess the resistance measurement unit of the resistance value of measuring above-mentioned distribution,
Change regulation moment and other moment of above-mentioned infrared view according to measured above-mentioned resistance value.
9. a distribution scrutiny program,
Execute claims the distribution inspection method described in 1, it is characterized in that,
Make the function of the above-mentioned each operation of computing machine performance.
10. a program recorded medium for embodied on computer readable, is characterized in that,
Record distribution scrutiny program claimed in claim 9.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-248454 | 2011-11-14 | ||
| JP2011248454A JP5886004B2 (en) | 2011-11-14 | 2011-11-14 | Wiring inspection method and wiring inspection apparatus |
| PCT/JP2012/078417 WO2013073387A1 (en) | 2011-11-14 | 2012-11-02 | Wire inspection method, and wire inspection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103890596A true CN103890596A (en) | 2014-06-25 |
| CN103890596B CN103890596B (en) | 2016-02-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280052749.XA Expired - Fee Related CN103890596B (en) | 2011-11-14 | 2012-11-02 | Distribution inspection method and distribution testing fixture |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5886004B2 (en) |
| CN (1) | CN103890596B (en) |
| WO (1) | WO2013073387A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104320077A (en) * | 2014-09-29 | 2015-01-28 | 广东产品质量监督检验研究院 | Rapid detection method for photovoltaic components |
| CN104569722A (en) * | 2014-12-31 | 2015-04-29 | 江苏武进汉能光伏有限公司 | Test method of thin-film battery micro-short circuit |
| CN107923939A (en) * | 2015-09-02 | 2018-04-17 | 株式会社日立高新技术 | Method for circuit inspection and sample check device |
| CN109545115A (en) * | 2018-12-04 | 2019-03-29 | 深圳市华星光电半导体显示技术有限公司 | Device of testing electrical properties and device of testing electrical properties cross hairs precise defect location method |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6769607B2 (en) * | 2015-11-20 | 2020-10-14 | 学校法人日本大学 | High temperature region extractor |
| EP3786598A1 (en) * | 2019-08-30 | 2021-03-03 | ABB Schweiz AG | System for monitoring a switchgear |
| CN116699428B (en) * | 2023-08-08 | 2023-10-10 | 深圳市杰成镍钴新能源科技有限公司 | Defect detection method and device for retired battery |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2013104770A (en) | 2013-05-30 |
| WO2013073387A1 (en) | 2013-05-23 |
| JP5886004B2 (en) | 2016-03-16 |
| CN103890596B (en) | 2016-02-24 |
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