CN104569722A - Test method of thin-film battery micro-short circuit - Google Patents
Test method of thin-film battery micro-short circuit Download PDFInfo
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- CN104569722A CN104569722A CN201410851867.8A CN201410851867A CN104569722A CN 104569722 A CN104569722 A CN 104569722A CN 201410851867 A CN201410851867 A CN 201410851867A CN 104569722 A CN104569722 A CN 104569722A
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- short circuit
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- hull cell
- reverse voltage
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Abstract
The invention discloses a test method of a thin-film battery micro-short circuit. The test method comprises the following steps that firstly, a backward voltage is applied to the positive electrode and the negative electrode of a thin-film battery for 800 ms to 5 s; secondly, an infrared imaging device is used for observing the thin-film battery to which the voltage is applied; thirdly, the micro-short circuit gives off heat due to current passing, different states can be displayed in the infrared imaging device, and therefore the micro-short circuit position can be accurately found. By means of the test method, the micro-short circuit position can be quickly and accurately found when a micro-short circuit occurs, and the test method indicates directions for technology improving.
Description
Technical field
The present invention relates to a kind of method of testing of hull cell micro-short circuit.
Background technology
In the production run of thin-film solar cells, due to reasons such as production environment, production equipment, starting material, be easy to the micro-short circuit phenomenon occurring battery, the appearance of micro-short circuit makes the electrical property of solar cell obviously decline, and even causes and scraps.
The monitoring of the monitoring of current thin film manufacture of solar cells process particularly unit for electrical property parameters is mainly by I-V test machine, according to the result of I-V test and the research to production run, electrical property can be caused to decline to micro-short circuit tentatively to judge, but the position occurred for micro-short circuit can not provide clear and definite result, causes puzzlement to follow-up improvement work.
Summary of the invention
The object of this invention is to provide a kind of method of testing that can find micro-short circuit position when hull cell generation micro-short circuit fast and accurately.
The technical scheme realizing the object of the invention is: a kind of method of testing of hull cell micro-short circuit, comprises the following steps:
1., at the both positive and negative polarity of hull cell apply reverse voltage, and keep 800ms ~ 5s time;
2., infrared imaging device is used to observe the hull cell be pressed;
3., in micro-short circuit position generate heat owing to there being electric current to pass through, different states can be demonstrated in infrared imaging device, thus accurately find the position that micro-short circuit occurs.
The magnitude of voltage of described reverse voltage is 5V ~ 7V.
When described hull cell is the thin-film solar cells such as unijunction, binode, three knots or CIGS, the reverse voltage applied is constant voltage, and electric pressure requires the breakdown reverse voltage being less than single solar cell.
The electric current of described reverse voltage is adjustable current.
The current adjustment scope of described reverse voltage is 1000mA ~ 3000mA.
The retention time of described reverse voltage is often save hull cell back-pressure 800ms or five joints back-pressure 2s ~ 5s altogether after first often saving.
Have employed technique scheme, the present invention has following beneficial effect: (1), by method of testing of the present invention, can search the position that micro-short circuit occurs, fast and accurately for process improving and lifting point the direction when micro-short circuit occurs.
(2) method of testing of the present invention can as a kind of monitoring means of production run, and real-time monitoring industrial processes, effectively avoids the generation of micro-short circuit.
Embodiment
(embodiment 1)
The method of testing of the hull cell micro-short circuit of the present embodiment, comprises the following steps:
1., at the both positive and negative polarity of hull cell apply the reverse voltage of 5V ~ 7V, and keep 800ms ~ 5s time.The retention time of reverse voltage is often save hull cell back-pressure 800ms or five joints back-pressure 2s ~ 5s altogether after first often saving.The adjustable current of the electric current of reverse voltage to be adjustable extent be 1000mA ~ 3000mA.When hull cell is the thin-film solar cells such as unijunction, binode, three knots or CIGS, the reverse voltage applied is constant voltage, and electric pressure requires the breakdown reverse voltage being less than single solar cell.
2., infrared imaging device is used to observe the hull cell be pressed;
3., in micro-short circuit position generate heat owing to there being electric current to pass through, different states can be demonstrated in infrared imaging device, thus accurately find the position that micro-short circuit occurs.
By the method for testing of the hull cell micro-short circuit of the present embodiment, the position that micro-short circuit occurs can be searched fast and accurately when micro-short circuit occurs, for process improving and lifting point the direction.The method of testing of the hull cell micro-short circuit of the present embodiment can as a kind of monitoring means of production run, and real-time monitoring industrial processes, effectively avoids the generation of micro-short circuit.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a method of testing for hull cell micro-short circuit, is characterized in that: comprise the following steps:
1., at the both positive and negative polarity of hull cell apply reverse voltage, and keep 800ms ~ 5s time;
2., infrared imaging device is used to observe the hull cell be pressed;
3., in micro-short circuit position generate heat owing to there being electric current to pass through, different states can be demonstrated in infrared imaging device, thus accurately find the position that micro-short circuit occurs.
2. the method for testing of a kind of hull cell micro-short circuit according to claim 1, is characterized in that: the magnitude of voltage of described reverse voltage is 5V ~ 7V.
3. the method for testing of a kind of hull cell micro-short circuit according to claim 1, it is characterized in that: when described hull cell is the thin-film solar cells such as unijunction, binode, three knots or CIGS, the reverse voltage applied is constant voltage, and electric pressure requires the breakdown reverse voltage being less than single solar cell.
4. the method for testing of a kind of hull cell micro-short circuit according to claim 1, is characterized in that: the electric current of described reverse voltage is adjustable current.
5. the method for testing of a kind of hull cell micro-short circuit according to claim 4, is characterized in that: the current adjustment scope of described reverse voltage is 1000mA-3000mA.
6. the method for testing of a kind of hull cell micro-short circuit according to claim 1, is characterized in that: the retention time of described reverse voltage is for often saving hull cell back-pressure 800ms or five joints back-pressure 2s ~ 5s altogether after first often saving.
Priority Applications (1)
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CN201410851867.8A CN104569722A (en) | 2014-12-31 | 2014-12-31 | Test method of thin-film battery micro-short circuit |
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CN201410851867.8A CN104569722A (en) | 2014-12-31 | 2014-12-31 | Test method of thin-film battery micro-short circuit |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111007408A (en) * | 2019-12-12 | 2020-04-14 | 国联汽车动力电池研究院有限责任公司 | Soft package lithium ion battery edge voltage defect detection, analysis and repair method and device |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201464379U (en) * | 2009-03-24 | 2010-05-12 | 陕西众森电能科技有限公司 | Solar cell defect online detection device |
CN102472791A (en) * | 2009-08-04 | 2012-05-23 | 国立大学法人奈良先端科学技术大学院大学 | Solar cell evaluation method, evaluation device, maintenance method, maintenance system, and method of manufacturing solar cell module |
CN102569496A (en) * | 2010-12-17 | 2012-07-11 | 上海山晟太阳能科技有限公司 | Process method for detecting defects of solar cell assembly |
CN202772169U (en) * | 2012-08-24 | 2013-03-06 | 四川汉能光伏有限公司 | Amorphous silicon film solar cell reverse voltage restoration device controlled by independent power supply subarea |
CN103380366A (en) * | 2011-03-09 | 2013-10-30 | 夏普株式会社 | Defect inspection method, defect inspection apparatus, and method for manufacturing substrate |
JP2014025902A (en) * | 2012-07-30 | 2014-02-06 | Sharp Corp | Method and apparatus for detecting defects, and method of manufacturing semiconductor substrates |
CN103733055A (en) * | 2011-08-31 | 2014-04-16 | 夏普株式会社 | Wiring fault detection method, wiring fault detection device, and method for manufacturing semiconductor substrate |
CN103858017A (en) * | 2011-10-18 | 2014-06-11 | 夏普株式会社 | Wiring defect inspecting method, wiring defect inspecting apparatus, wiring defect inspecting program, and wiring defect inspecting program recording medium |
CN103890596A (en) * | 2011-11-14 | 2014-06-25 | 夏普株式会社 | Wire inspection method, and wire inspection device |
CN103988070A (en) * | 2012-02-28 | 2014-08-13 | 夏普株式会社 | Defect detection method, defect detection device, and method for producing semiconductor substrate |
-
2014
- 2014-12-31 CN CN201410851867.8A patent/CN104569722A/en active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201464379U (en) * | 2009-03-24 | 2010-05-12 | 陕西众森电能科技有限公司 | Solar cell defect online detection device |
CN102472791A (en) * | 2009-08-04 | 2012-05-23 | 国立大学法人奈良先端科学技术大学院大学 | Solar cell evaluation method, evaluation device, maintenance method, maintenance system, and method of manufacturing solar cell module |
CN102569496A (en) * | 2010-12-17 | 2012-07-11 | 上海山晟太阳能科技有限公司 | Process method for detecting defects of solar cell assembly |
CN103380366A (en) * | 2011-03-09 | 2013-10-30 | 夏普株式会社 | Defect inspection method, defect inspection apparatus, and method for manufacturing substrate |
CN103733055A (en) * | 2011-08-31 | 2014-04-16 | 夏普株式会社 | Wiring fault detection method, wiring fault detection device, and method for manufacturing semiconductor substrate |
CN103858017A (en) * | 2011-10-18 | 2014-06-11 | 夏普株式会社 | Wiring defect inspecting method, wiring defect inspecting apparatus, wiring defect inspecting program, and wiring defect inspecting program recording medium |
CN103890596A (en) * | 2011-11-14 | 2014-06-25 | 夏普株式会社 | Wire inspection method, and wire inspection device |
CN103988070A (en) * | 2012-02-28 | 2014-08-13 | 夏普株式会社 | Defect detection method, defect detection device, and method for producing semiconductor substrate |
JP2014025902A (en) * | 2012-07-30 | 2014-02-06 | Sharp Corp | Method and apparatus for detecting defects, and method of manufacturing semiconductor substrates |
CN202772169U (en) * | 2012-08-24 | 2013-03-06 | 四川汉能光伏有限公司 | Amorphous silicon film solar cell reverse voltage restoration device controlled by independent power supply subarea |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111007408A (en) * | 2019-12-12 | 2020-04-14 | 国联汽车动力电池研究院有限责任公司 | Soft package lithium ion battery edge voltage defect detection, analysis and repair method and device |
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