JPH11329997A5 - - Google Patents

Info

Publication number
JPH11329997A5
JPH11329997A5 JP1998133911A JP13391198A JPH11329997A5 JP H11329997 A5 JPH11329997 A5 JP H11329997A5 JP 1998133911 A JP1998133911 A JP 1998133911A JP 13391198 A JP13391198 A JP 13391198A JP H11329997 A5 JPH11329997 A5 JP H11329997A5
Authority
JP
Japan
Prior art keywords
substrate
layer
ion
crystal
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1998133911A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11329997A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP13391198A priority Critical patent/JPH11329997A/ja
Priority claimed from JP13391198A external-priority patent/JPH11329997A/ja
Publication of JPH11329997A publication Critical patent/JPH11329997A/ja
Publication of JPH11329997A5 publication Critical patent/JPH11329997A5/ja
Withdrawn legal-status Critical Current

Links

JP13391198A 1998-05-15 1998-05-15 貼り合わせ基材とその作製方法 Withdrawn JPH11329997A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13391198A JPH11329997A (ja) 1998-05-15 1998-05-15 貼り合わせ基材とその作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13391198A JPH11329997A (ja) 1998-05-15 1998-05-15 貼り合わせ基材とその作製方法

Publications (2)

Publication Number Publication Date
JPH11329997A JPH11329997A (ja) 1999-11-30
JPH11329997A5 true JPH11329997A5 (enExample) 2005-09-29

Family

ID=15115986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13391198A Withdrawn JPH11329997A (ja) 1998-05-15 1998-05-15 貼り合わせ基材とその作製方法

Country Status (1)

Country Link
JP (1) JPH11329997A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4304879B2 (ja) 2001-04-06 2009-07-29 信越半導体株式会社 水素イオンまたは希ガスイオンの注入量の決定方法
US20100193900A1 (en) * 2007-07-13 2010-08-05 National University Corporation Tohoku University Soi substrate and semiconductor device using an soi substrate
JP5565768B2 (ja) * 2009-10-23 2014-08-06 独立行政法人日本原子力研究開発機構 基板加工方法および半導体装置の製造方法
FR2987682B1 (fr) * 2012-03-05 2014-11-21 Soitec Silicon On Insulator Procede de test d'une structure semi-conducteur sur isolant et application dudit test pour la fabrication d'une telle structure

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