JPH11317565A - Semiconductor surface processing jig - Google Patents
Semiconductor surface processing jigInfo
- Publication number
- JPH11317565A JPH11317565A JP12436898A JP12436898A JPH11317565A JP H11317565 A JPH11317565 A JP H11317565A JP 12436898 A JP12436898 A JP 12436898A JP 12436898 A JP12436898 A JP 12436898A JP H11317565 A JPH11317565 A JP H11317565A
- Authority
- JP
- Japan
- Prior art keywords
- jig
- surface treatment
- semiconductor surface
- spacer
- laser bar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体表面処理用治
具に関し、特に半導体レーザの端面に光学薄膜を成膜す
るために使用されるものである。The present invention relates to a jig for treating a semiconductor surface, and more particularly to a jig for forming an optical thin film on an end face of a semiconductor laser.
【０００２】[0002]
【従来の技術】半導体レーザにおいては、光出射面端面
のパッシベーション、或いは、より高い光出力を得るこ
とを目的とした高反射膜、低反射膜の形成のため、光学
薄膜の成膜を行うことが必須となっている。2. Description of the Related Art In a semiconductor laser, an optical thin film is formed in order to passivate an end face of a light emitting surface or to form a high reflection film and a low reflection film for obtaining a higher light output. Is mandatory.
【０００３】光学薄膜を成膜するには、複数個の半導体
レーザチップを個々に切出さないまま隣り合わせて端面
へき開を行ったレーザバーを重ね合せ、電子ビーム蒸
着、抵抗加熱蒸着、ＣＶＤ、スパッタなどのプロセス装
置において、成膜物質が飛来する方向にレーザ端面を対
向させて成膜を行なうことが多い。[0003] To form an optical thin film, a plurality of semiconductor laser chips are not individually cut out, but laser bars having cleaved end faces are superimposed on each other, and electron beam evaporation, resistance heating evaporation, CVD, sputtering and the like are performed. In a process apparatus, film formation is often performed with the laser end faces facing each other in the direction in which the film formation material comes in.
【０００４】[0004]
【発明が解決しようとする課題】この成膜方法で問題に
なるのは、縦あるいは横に重ねたバー端面の段差による
コーティングむらの発生である。成膜される面に段差が
ある場合、成膜物質飛来方向に対して奥側に位置する部
分の隅部は、成膜物質飛来方向に向って突出している突
出部の遮蔽効果によって膜厚が薄くなりコーティングむ
らが発生する。The problem with this film forming method is that uneven coating occurs due to steps on the end faces of the bars vertically or horizontally. If there is a step on the surface on which the film is formed, the corners of the portion located on the far side with respect to the direction in which the film is deposited have a film thickness due to the shielding effect of the protrusion protruding in the direction in which the film is deposited. It becomes thin and coating unevenness occurs.
【０００５】通常、半導体レーザチップの発光部は、チ
ップ端部から数μｍ程度しか離れておらず、このような
コーティングむらが発生している場所に位置することが
多い。Usually, the light emitting portion of the semiconductor laser chip is located only about several μm from the end of the chip, and is often located at a place where such coating unevenness occurs.
【０００６】このコーティングむらによって発光部の上
の光学薄膜膜厚の変化が生じて半導体レーザからの出射
光の透過率がしばしば大きく変化し、半導体レーザの特
性に重大な影響を与えることが知られている。[0006] It is known that the unevenness of the coating causes a change in the thickness of the optical thin film on the light emitting portion, which often greatly changes the transmittance of the light emitted from the semiconductor laser, and seriously affects the characteristics of the semiconductor laser. ing.
【０００７】したがって、いかにコーティングむらを発
生させずに光学薄膜の成膜を行うかということが、半導
体レーザ組立上の重要な問題であった。従来、このコー
ティングむらを防止するため、レーザバーの間にレーザ
バーより若干幅の狭い短冊形のスペーサを使用してい
た。Therefore, how to form an optical thin film without causing coating unevenness has been an important problem in assembling a semiconductor laser. Conventionally, in order to prevent this coating unevenness, a strip-shaped spacer slightly narrower than the laser bar has been used between the laser bars.
【０００８】レーザバーと幅の短いスペーサを交互に積
重ね、スペーサをレーザバーの片側端面にそろえること
により、そろえた端面の反対側ではレーザバーとレーザ
バーの端面はスペーサの端面より突出た構造となる。By alternately stacking laser bars and short spacers, and aligning the spacers on one end face of the laser bar, the laser bar and the end face of the laser bar project from the end face of the spacer on the opposite side of the aligned end face.
【０００９】この面を成膜物質飛来方向に対向させるこ
とにより、レーザ端面が遮蔽されることがなくなり、コ
ーティングむらは生じない。ただし、レーザバーは２つ
の端面を有しており、いずれの端面上にも成膜する必要
があるため、この構造では、片側の端面の光学薄膜を成
膜するごとにレーザバーとスペーサをいったん取り外し
てから装着し、整列し直さなければならない。この作業
は非常に煩雑であり、生産性を損ねるという問題点があ
った。By facing this surface in the direction in which the film-forming substance comes in, the laser end surface is not shielded and coating unevenness does not occur. However, since the laser bar has two end faces and it is necessary to form a film on either end face, in this structure, the laser bar and the spacer are once removed each time an optical thin film is formed on one end face. Must be installed and realigned. This operation is very complicated, and there is a problem that productivity is impaired.
【００１０】[0010]
【課題を解決するための手段】上記課題を解決するた
め、レーザバーとレーザバーとの間にはさみこむスペー
サの形状として、レーザバーの光学薄膜を成膜する端面
に隣接するスペーサの端面に、レーザバーと接触する面
に沿って略平行な切欠きを設け、かつ、レーザバーの発
光点が存在する半導体多層膜が積層された面とスペーサ
の切欠きが存在する面とを重ね合せるようにし、かつレ
ーザバーとスペーサを装着するためのコの字型の溝を対
向させた半導体表面処理用治具にレーザバーとスペーサ
を交互に溝にはめ込むようにして積み重ねて装着する。In order to solve the above-mentioned problem, a spacer is sandwiched between the laser bars, and is in contact with the laser bar at the end face of the spacer adjacent to the end face on which the optical thin film of the laser bar is formed. A substantially parallel notch is provided along the surface, and the surface on which the semiconductor multilayer film having the laser bar emission point is laminated and the surface where the notch of the spacer exists are overlapped, and the laser bar and the spacer are Laser bars and spacers are stacked and mounted on a jig for semiconductor surface treatment, in which the U-shaped grooves for mounting are opposed to each other, so that the laser bars and the spacers are alternately fitted into the grooves.
【００１１】[0011]
【発明の実施の形態】本発明による第１の実施例を図１
に示す。本実施例では、スペーサ１の１つの端面につい
て、レーザバーと接触する面２面ぞれぞれについて面に
沿って略平行で、奥行を有する切欠き１１を設けてい
る。前記端面と対向する反対側端面についても、同様の
切欠き１１を設ける。スペーサ１の幅はレーザバーの共
振器長と略同じ長さに設定されている。この構造によっ
て、レーザバー３のどちらか一方の端面とスペーサ１の
端面を略そろえれば、スペーサ１の切欠き部分が成膜物
質飛来方向に対して奥まっているため、レーザ端面の発
光部近傍では遮蔽効果によるコーティングむらが生じな
い。FIG. 1 shows a first embodiment of the present invention.
Shown in In this embodiment, one end face of the spacer 1 is provided with a notch 11 having a depth, which is substantially parallel to each of two faces in contact with the laser bar along the face. A similar notch 11 is provided also on the opposite end face facing the end face. The width of the spacer 1 is set to substantially the same length as the resonator length of the laser bar. With this structure, if one of the end faces of the laser bar 3 and the end face of the spacer 1 are substantially aligned, the cutout portion of the spacer 1 is deepened in the direction in which the film-forming substance comes in. No coating unevenness due to the shielding effect occurs.
【００１２】切欠きの奥行が短すぎた場合、レーザバー
３とスペーサ１との間で多少の位置ずれが生じた際に、
切り欠き部分がレーザバー端面よりも成膜物質飛来方向
に対して突出てしまい、切欠きの効果が失われてしまう
おそれがある。If the depth of the notch is too short, when a slight displacement occurs between the laser bar 3 and the spacer 1,
The notch portion may protrude from the laser bar end face in the direction in which the film-forming substance comes in, and the effect of the notch may be lost.
【００１３】一方、奥行が長すぎると成膜物質が切り欠
き部分に回り込んで付着する面積が多くなり、チップの
ボンディング不良あるいはレーザの熱抵抗増大などの原
因となるおそれがある。On the other hand, if the depth is too long, the area where the film-forming substance wraps around the notch portion and adheres to it increases, which may cause chip bonding failure or increase in the thermal resistance of the laser.
【００１４】成膜方法や治具精度によっても異なるが、
最適な奥行はスペーサの幅の１％から２０％の間にあ
る。図１の実施例では、切欠き１１は「Ｌ」字型にえぐ
られた形状となっている。しかし、所要の奥行が前記条
件を満たせば、図２ａ、図２ｂまたは図２ｃに示すよう
に、切欠きの断面形状が異なっていても問題ない。Although it depends on the film forming method and jig accuracy,
The optimal depth is between 1% and 20% of the width of the spacer. In the embodiment of FIG. 1, the notch 11 has an “L” shape. However, if the required depth satisfies the above condition, there is no problem even if the cross-sectional shapes of the notches are different as shown in FIG. 2A, FIG. 2B or FIG. 2C.
【００１５】図２ａは切欠きが斜面状の平面である例、
図２ｂは切欠きが凹レンズ状にえぐられた例、図２ｃは
切欠きが凸レンズ状である例であるが、いずれであって
も問題なく、形状には限定されない。FIG. 2a shows an example in which the notch is a sloped plane,
FIG. 2B shows an example in which the notch is formed in a concave lens shape, and FIG. 2C shows an example in which the notch is a convex lens shape.
【００１６】図１のスペーサ１は、はさみこむ２つのレ
ーザバー３に接する２面のいずれの側にも切欠きがある
上下対称構造を有している。この構造によって、取扱い
の上でたとえ上下が逆になるようなことがあっても、レ
ーザバー３と接触する形は変わらず、問題は生じない。
このため、取扱いが容易で、量産性に富む。The spacer 1 shown in FIG. 1 has a vertically symmetric structure in which notches are formed on either side of two surfaces in contact with the two laser bars 3 to be sandwiched. With this structure, even if it is turned upside down in handling, the shape of contact with the laser bar 3 does not change, and no problem occurs.
For this reason, it is easy to handle and has high productivity.
【００１７】スペーサの材質として、たとえば、半導
体、金属、セラミツクが挙げられる。半導体としては、
シリコン(Si)、ガリウム砒素(GaAs)などが望ましい。こ
れらは、ダイヤモンド刃による切削やエッチングにより
精度の高い加工が可能で、取扱いによる欠け・われの発
生が少なく、かつ低価格であるという特長を有する。Examples of the material of the spacer include a semiconductor, a metal, and a ceramic. As a semiconductor,
Silicon (Si), gallium arsenide (GaAs) and the like are desirable. These are characterized in that they can be processed with high precision by cutting or etching with a diamond blade, have little chipping or cracking due to handling, and are inexpensive.
【００１８】金属としてはステンレス・スチール、モリ
ブデン（Mo）、チタン（Ti）などが望ましい。これら
は、剛性が高く、かつ、扱いによる欠け・われの発生が
少なく、かつ、錆が発生しにくく、かつ切削や金型によ
る加工により精度高い加工が可能であり、信頼性の高い
半導体表面用治具が実現できると言う特長を持つ。The metal is preferably stainless steel, molybdenum (Mo), titanium (Ti), or the like. These have high rigidity, are less likely to be chipped or cracked due to handling, are less likely to generate rust, can be processed with high precision by cutting and processing with metal molds, and have high reliability for semiconductor surfaces. It has the feature that a jig can be realized.
【００１９】セラミックとしては、酸化アルミニウム
（Al2 O 3 ）、窒化アルミニウム（AlN ）、シリコンカ
ーバイド（SiC ）などが望ましい。これらは焼結などの
方法により、量産性に富むスペーサを提供できる。As the ceramic, aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), silicon carbide (SiC) and the like are desirable. These can provide spacers with high mass productivity by a method such as sintering.
【００２０】また、スペーサの幅はレーザバー幅すなわ
ち半導体レーザの共振器長と略同等の長さを有してお
り、レーザーは、半導体表面処理用治具本体に装着する
パー端面とスペーサ端面を何らかの方法で概略一致さ
せ、固定すれば、レーザバー端面の２つの端面の両方に
光学薄膜を成膜する場合に、レーザバー端面とスぺーサ
端面をそろえるため整列しなおすという煩雑な手間が要
らない。The width of the spacer is substantially equal to the width of the laser bar, that is, the length of the resonator of the semiconductor laser. When the optical thin films are formed on both of the two end faces of the laser bar, the laser bar and the spacer end faces need to be aligned and re-aligned.
【００２１】このため、量産性が良好な半導体表面処理
用治具が提供できる。さらに、本実施例では、レーザバ
ー３、スペーサ１を装着する半導体表面処理用治具とし
て、図５に示すようなコの字型の溝を対向させ溝間隔を
レーザバーの長さに合わせ、レーザバーとスペーサを交
互に溝にはめ込むようにして積み重ねていく構造を有す
る半導体表面処理用治具本体６を用いている。このよう
な治具では、レーザバー３、スペーサ１のそれぞれのバ
ー端部を溝にはめ込むようにして交互に上から落とし込
むことによって自動的に重ねていくことができる。Therefore, a jig for semiconductor surface treatment having good mass productivity can be provided. Further, in the present embodiment, as a jig for semiconductor surface treatment for mounting the laser bar 3 and the spacer 1, a U-shaped groove as shown in FIG. A jig body 6 for semiconductor surface treatment is used which has a structure in which spacers are stacked alternately in grooves. In such a jig, the laser bar 3 and the spacer 1 can be automatically overlapped by being alternately dropped from above such that the respective bar ends are fitted into the grooves.
【００２２】このため手動での着脱が非常に容易になり
生産性が向上する。また、この構造は着脱を自動化する
ことが容易で、さらなる生産性向上を図ることが可能と
なる。For this reason, manual attachment / detachment becomes very easy and productivity is improved. In addition, this structure makes it easy to automate attachment and detachment, and can further improve productivity.
【００２３】次に本発明による第２の実施例を図３に示
す。本実施例では、スペーサ２の１つの端面について、
レーザバー３と接触する面の一方の面にのみ面に沿って
略平行で、奥行の長さを有する切欠き１１を設けてい
る。前記端面と対向する反対側端面についても、同様の
切欠き１１を設ける。スペーサ２の幅はレーザバーの共
振器長と略同じ長さに設定されている。この構造によっ
て、レーザバー３のどちらか一方の端面とスペーサ２の
端面を略そろえ、かつレーザバーの発光点が存在する半
導体多層膜の積層を行った側の面をスペーサ２の切欠き
１１が存在する面と重ね合せて半導体表面処理用治具本
体６に装着すれば、レーザ端面端部は、隣接するスペー
サ１が、成膜物質飛来方向に対して奥まっているため、
レーザ端面の発光部近傍は、遮蔽効果によるコーティン
グむらが生しない。これは実施例１と同様である。Next, a second embodiment according to the present invention is shown in FIG. In this embodiment, for one end face of the spacer 2,
A notch 11 having a depth, which is substantially parallel to only one of the surfaces in contact with the laser bar 3 along the surface, is provided. A similar notch 11 is provided also on the opposite end face facing the end face. The width of the spacer 2 is set to substantially the same length as the resonator length of the laser bar. With this structure, one of the end faces of the laser bar 3 and the end face of the spacer 2 are substantially aligned, and the cutout 11 of the spacer 2 exists on the side on which the lamination of the semiconductor multilayer film including the light emitting point of the laser bar is performed. If the laser surface is mounted on the jig body 6 for semiconductor surface treatment while being superposed on the surface, the end portion of the laser end face is deepened with respect to the adjacent spacer 1 in the direction in which the film-forming substance comes in.
In the vicinity of the light emitting portion on the laser end face, coating unevenness due to the shielding effect does not occur. This is the same as in the first embodiment.
【００２４】実施例２ではスペーサ２の１つの端面につ
いて、レーザバーと接触する面の一方の面にのみ面に沿
って略平行で、奥行の長さを有する切欠き１１を設けて
いる。In the second embodiment, one end face of the spacer 2 is provided with a notch 11 having a depth, which is substantially parallel to only one of the faces in contact with the laser bar along the face.
【００２５】この構造は、実施例１よりもさらに作製が
容易で、コストが低減できる。ただし、半導体表面処理
用治具本体６への装着時に、レーザバー３の発光点側面
とスペーサ２の切欠き側面とが一致していないと、光学
薄膜成膜時にコーティングむらが生しる可能性がある。This structure is easier to fabricate than the first embodiment, and the cost can be reduced. However, if the light emitting point side surface of the laser bar 3 does not match the cutout side surface of the spacer 2 at the time of attachment to the jig body 6 for semiconductor surface treatment, coating unevenness may occur during the formation of the optical thin film. is there.
【００２６】このため取扱いに注意が必要だが、スペー
サ２のレーザバーに接する２つの面のそれぞれの表面状
態を異なったものにすることにより識別が容易になる。
たとえば、一方の面をミラー研磨し、もう一方の面をエ
ッチング、ラッピングなどにより粗面とすることで、上
下の違いを識別することが可能である。もちろんこの構
成は逆であっても構わない。For this reason, care must be taken in handling. However, the two surfaces of the spacer 2 that are in contact with the laser bar have different surface conditions, which facilitates identification.
For example, by polishing one surface with a mirror and making the other surface rough by etching, lapping, or the like, it is possible to discriminate the difference between the upper and lower surfaces. Of course, this configuration may be reversed.
【００２７】図３の実施例では、切欠きは「Ｌ」字型に
えぐられた形状となっているが、実施例１同様、所要の
奥行が前記条件を満たせば、図４ａ、図４ｂまたは図４
ｃに示すように、切欠きの断面形状が異なっていても問
題ない。In the embodiment shown in FIG. 3, the notch has a shape cut out in an "L" shape. However, as in the first embodiment, if the required depth satisfies the above-mentioned condition, FIG. FIG.
As shown in c, there is no problem even if the cross-sectional shapes of the notches are different.
【００２８】図４ａは切欠きが斜面状の平面である例、
図４ｂは切欠きが凹レンズ状にえぐられた例、図４ｃは
切欠きが凸レンズ状である例であるが、いずれであって
も問題なく、形状には限定されない。この他のスペーサ
２の構成要件、作用、効果などについては、実施例１と
同様である。FIG. 4a shows an example in which the notch is a plane having a slope.
FIG. 4B shows an example in which the notch is formed in a concave lens shape, and FIG. 4C shows an example in which the notch is a convex lens shape. The other components, functions, effects, and the like of the spacer 2 are the same as those in the first embodiment.
【００２９】[0029]
【発明の効果】請求項１によって、レーザバー端面に光
学薄膜を成膜する際に、コーテいングむらが生じること
なく、生産性の高い半導体表面処理用治具が実現でき
る。請求項２によって、レーザバー端面に光学薄膜を成
膜する際に、コーティングむらが生しることなく、生産
性が高く、かつ、低価格の半導体表面処理用治具が実現
できる。According to the first aspect, when forming an optical thin film on the end face of a laser bar, a coating jig for semiconductor surface treatment with high productivity can be realized without causing coating unevenness. According to the second aspect, when forming an optical thin film on the end face of the laser bar, it is possible to realize a high-productivity, low-cost jig for semiconductor surface treatment without causing coating unevenness.
【００３０】請求項３によって、請求項２の半導体表面
処理用治具において、より生産性の高い半導体表面処理
用治具が実現できる。請求項４、請求項５および請求項
６によって、請求項１、請求項２および請求項３の半導
体表面処理用治具において、最適な切欠きの奥行長さが
設定され、信頼性の高い光学薄膜を成膜できる半導体表
面処理用治具が実現できる。According to the third aspect of the present invention, the jig for semiconductor surface treatment according to the second aspect of the present invention can be realized with higher productivity. According to the fourth, fifth, and sixth aspects of the present invention, in the jig for the semiconductor surface treatment of the first, second, and third aspects, an optimum depth of the notch is set, and a highly reliable optical element is provided. A jig for semiconductor surface treatment capable of forming a thin film can be realized.
【００３１】請求項７、請求項８および請求項９によっ
て、請求項１、請求項２および請求項３の半導体表面処
理用治具において、精度の高い加工が可能で、取扱いに
よる欠け・われの発生が少なく、かつ低価格な半導体表
面処理用治具が実現できる。According to the seventh, eighth and ninth aspects of the present invention, the jig for treating a semiconductor surface according to the first, second and third aspects is capable of performing high-precision processing, and is free from chipping and cracking due to handling. An inexpensive and low-cost jig for semiconductor surface treatment can be realized.
【００３２】請求項１０、請求項１１および請求項１２
によって、請求項１、請求項２および請求項３の半導体
表面処理用治具において、精度の高い加工が可能であ
り、信頼性の高い半導体表面処理用治具が実現できる。[0032] Claims 10, 11, and 12
Accordingly, in the jigs for semiconductor surface treatment according to the first, second, and third aspects, highly accurate processing is possible, and a highly reliable jig for semiconductor surface treatment can be realized.
【００３３】請求項１３、請求項１４および請求項１５
によって、量産性に富む半導体表面処理用治具が実現で
きる。請求項１６によって、上記半導体表面処理用治具
において、操作が容易で自動化を図ることが容易な半導
体表面処置用治具が実現できる。[0033] Claims 13, 14, and 15
Thereby, a jig for semiconductor surface treatment which is rich in mass productivity can be realized. According to the sixteenth aspect, in the jig for treating a semiconductor surface, a jig for treating a semiconductor surface which can be easily operated and automated can be realized.
【図１】本発明第１の実施例の半導体表面処理用治具の
概要を示す概略図FIG. 1 is a schematic view showing an outline of a jig for semiconductor surface treatment according to a first embodiment of the present invention.
【図２ａ】本発明第１の実施例の半導体表面処理用治具
に用いるスペーサの断面形状例FIG. 2A is an example of a cross-sectional shape of a spacer used in a jig for semiconductor surface treatment according to the first embodiment of the present invention.
【図２ｂ】本発明第１の実施例の半導体表面処理用治具
に用いるスペーサの断面形状例FIG. 2B is an example of a cross-sectional shape of a spacer used in the jig for semiconductor surface treatment according to the first embodiment of the present invention;
【図２ｃ】本発明第１の実施例の半導体表面処理用治具
に用いるスペーサの断面形状例FIG. 2C is an example of a cross-sectional shape of a spacer used in the jig for semiconductor surface treatment according to the first embodiment of the present invention;
【図３】本発明第２の実施例の半導体表面処理用治具の
概要を示す概略図FIG. 3 is a schematic view showing an outline of a jig for semiconductor surface treatment according to a second embodiment of the present invention.
【図４ａ】本発明第２の実施例の半導体表面処理用治具
に用いるスペーサの断面形状例FIG. 4a is an example of a cross-sectional shape of a spacer used in a jig for semiconductor surface treatment according to a second embodiment of the present invention;
【図４ｂ】本発明第２の実施例の半導体表面処理用治具
に用いるスペーサの断面形状例FIG. 4b is an example of a cross-sectional shape of a spacer used in a jig for semiconductor surface treatment according to a second embodiment of the present invention.
【図４ｃ】本発明第２の実施例の半導体表面処理用治具
に用いるスペーサの断面形状例FIG. 4c is an example of a sectional shape of a spacer used in a jig for semiconductor surface treatment according to a second embodiment of the present invention.
【図５】本発明第１および第２の実施例によるレーザバ
ーおよびスペーサの半導体表面処理用治具本体への着脱
を示す概略図FIG. 5 is a schematic view showing attachment and detachment of a laser bar and a spacer to and from a jig body for semiconductor surface treatment according to the first and second embodiments of the present invention;
１ 本発明第１の実施例のスペーサ ２ 本発明第２の実施例のスペーサ ３ レーザバー ４ レーザ発光部 ６ 半導体表面処理用治具本体 １１ 切欠き DESCRIPTION OF SYMBOLS 1 Spacer of 1st Example of this invention 2 Spacer of 2nd Example of this invention 3 Laser bar 4 Laser emission part 6 Jig main body for semiconductor surface treatment 11 Notch
Claims (16)
ザバー端面を成膜物質飛来方向に対向させる構造を有
し、レーザバー端面に光学薄膜を成膜を行なうための半
導体表面処理装置において、レーザバーの共振器長すな
わちレーザバーの幅とほほ同等の長さを有し、レーザバ
ーの２つの端面に隣接するスペーサの２つの端面ぞれぞ
れについて、レーザバーと接触する２つの面に沿って略
平行なぞれぞれ切欠きを設けたスペーサを用いることを
特長とした、半導体表面処理用治具。1. A semiconductor surface treatment apparatus for laminating a laser bar and a spacer alternately so that an end face of a laser bar is opposed to a direction in which a film is formed, and for forming an optical thin film on an end face of the laser bar. Each of the two end faces of the spacer having a length substantially equal to the width of the laser bar and being adjacent to the two end faces of the laser bar, each being substantially parallel along the two faces in contact with the laser bar. A jig for semiconductor surface treatment, characterized by using a notched spacer.
ーザバー端面を成膜物質飛来方向に対向させる構造を有
し、レーザバー端面に光学薄膜を成膜を行なうための半
導体表面処理装置において、レーザバーの共振器長すな
わちレーザバーの幅とほほ同等の長さを有し、レーザバ
ーの２つの端面に隣接するスペーサの２つの端面ぞれぞ
れについて、レーザバーと接触する１つの面に沿って略
平行なぞれぞれ切欠きを設けたスペーサを用いることを
特長とした、半導体表面処理用治具。2. A semiconductor surface processing apparatus for forming an optical thin film on an end face of a laser bar, wherein the laser bar and spacers are alternately overlapped with each other so that end faces of the laser bar face each other in a direction in which a film is formed. Each of the two end faces of the spacer having a length substantially equal to the width of the laser bar and being adjacent to the two end faces of the laser bar, each being substantially parallel along one surface in contact with the laser bar. A jig for semiconductor surface treatment, characterized by using a notched spacer.
て、レーザバーに接する２つの面の一方をミラー表面と
し、もう一方を粗面としたことを特長とする半導体表面
処理用治具。3. The jig for semiconductor surface treatment according to claim 2, wherein one of the two surfaces in contact with the laser bar is a mirror surface and the other is a rough surface.
て、切欠きの奥行長さをスペーサの幅の１％から２０％
までの間に設定した半導体表面処理用治具。4. The jig for semiconductor surface treatment according to claim 1, wherein the depth of the notch is 1% to 20% of the width of the spacer.
Jig for semiconductor surface treatment set up to.
て、切欠きの奥行長さをスペーサの幅の１％から２０％
までの間に設定した半導体表面処理用治具。5. The jig for semiconductor surface treatment according to claim 2, wherein the depth of the notch is 1% to 20% of the width of the spacer.
Jig for semiconductor surface treatment set up to.
て、切欠きの奥行長さをスペーサの幅の１％から２０％
までの間に設定した半導体表面処理用治具。6. The jig for semiconductor surface treatment according to claim 3, wherein the depth of the notch is 1% to 20% of the width of the spacer.
Jig for semiconductor surface treatment set up to.
て、スペーサの材質をシリコン(Si)、ガリウム砒素(GaA
s)などの半導体とした半導体表面処理用治具。7. The jig for semiconductor surface treatment according to claim 1, wherein the spacer is made of silicon (Si), gallium arsenide (GaA).
j) A jig for semiconductor surface treatment using a semiconductor such as s).
て、スペーサの材質をシリコン(Si)、ガリウム砒素(GaA
s)などの半導体とした半導体表面処理用治具。8. The jig for semiconductor surface treatment according to claim 2, wherein the material of the spacer is silicon (Si), gallium arsenide (GaA).
j) A jig for semiconductor surface treatment using a semiconductor such as s).
て、スペーサの材質をシリコン(Si)、ガリウム砒素(GaA
s)などの半導体とした半導体表面処理用治具。9. The jig for semiconductor surface treatment according to claim 3, wherein the spacer is made of silicon (Si), gallium arsenide (GaA).
j) A jig for semiconductor surface treatment using a semiconductor such as s).
いて、スペーサの材質をステンレス・スチール、モリブ
デン（Mo）、チタン（Ti）などの金属とした半導体表面
処理用治具。10. The jig for semiconductor surface treatment according to claim 1, wherein the material of the spacer is a metal such as stainless steel, molybdenum (Mo) or titanium (Ti).
いて、スペーサの材質をステンレス・スチール、モリブ
デン（Mo）、チタン（Ti）などの金属とした半導体表面
処理用治具。11. The semiconductor surface treatment jig according to claim 2, wherein the spacer is made of a metal such as stainless steel, molybdenum (Mo), or titanium (Ti).
いて、スペーサの材質をステンレス・スチール、モリブ
デン（Mo）、チタン（Ti）などの金属とした半導体表面
処理用治具。12. The semiconductor surface treatment jig according to claim 3, wherein the spacer is made of a metal such as stainless steel, molybdenum (Mo), or titanium (Ti).
いて、スペーサの材質を酸化アルミニウム（Al2 O
3 ）、窒化アルミニウム（AlN ）、シリコンカーバイド
（SiC ）などのセラミックスとした半導体表面処理用治
具。13. The jig for semiconductor surface treatment according to claim 1, wherein the spacer is made of aluminum oxide (Al 2 O 3).
3 ) A jig for semiconductor surface treatment using ceramics such as aluminum nitride (AlN) and silicon carbide (SiC).
いて、スペーサの材質を酸化アルミニウム（Al2 O
3 ）、窒化アルミニウム（AlN ）、シリコンカーバイド
（SiC ）などのセラミックスとした半導体表面処理用治
具。14. The jig for semiconductor surface treatment according to claim 2, wherein the spacer is made of aluminum oxide (Al 2 O).
3 ) A jig for semiconductor surface treatment using ceramics such as aluminum nitride (AlN) and silicon carbide (SiC).
いて、スペーサの材質を酸化アルミニウム（Al2 O
3 ）、窒化アルミニウム（AlN ）、シリコンカーバイド
（SiC ）などのセラミックスとした半導体表面処理用治
具。15. The semiconductor surface treatment jig according to claim 3, wherein the spacer is made of aluminum oxide (Al 2 O).
3 ) A jig for semiconductor surface treatment using ceramics such as aluminum nitride (AlN) and silicon carbide (SiC).
の半導体表面処理用治具において、コの字型の溝を対向
させ溝間隔をレーザバーの長さに合わせ、レーザバーと
スペーサを交互に溝にはめ込むようにして積重ねていく
構造を有する半導体表面処理用治具。16. The method according to claim 1, 2 or 3.
The semiconductor jig for semiconductor surface treatment has a structure in which U-shaped grooves are opposed to each other, the groove interval is adjusted to the length of the laser bar, and the laser bar and the spacer are alternately fitted into the groove and stacked. jig.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12436898A JPH11317565A (en) | 1998-05-07 | 1998-05-07 | Semiconductor surface processing jig |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12436898A JPH11317565A (en) | 1998-05-07 | 1998-05-07 | Semiconductor surface processing jig |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11317565A true JPH11317565A (en) | 1999-11-16 |
Family
ID=14883678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12436898A Pending JPH11317565A (en) | 1998-05-07 | 1998-05-07 | Semiconductor surface processing jig |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11317565A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002344070A (en) * | 2001-05-14 | 2002-11-29 | Furukawa Electric Co Ltd:The | Device for holding laser bar |
| EP1416597A1 (en) * | 2002-10-31 | 2004-05-06 | Agilent Technologies, Inc. - a Delaware corporation - | A method and a carrier for treating end facets of photonic devices |
| KR20040041259A (en) * | 2002-11-09 | 2004-05-17 | 엘지전자 주식회사 | Method for depositing reflection layer on the facet of semiconductor laser diode chip bar |
| KR20040041263A (en) * | 2002-11-09 | 2004-05-17 | 엘지전자 주식회사 | Method for depositing reflection layer on the facet of semiconductor laser diode chip bar |
| KR20050068700A (en) * | 2003-12-30 | 2005-07-05 | 엘지전자 주식회사 | Method for depositing reflection layer on the facet of semiconductor laser diode chip bar |
| JP2005340333A (en) * | 2004-05-25 | 2005-12-08 | Matsushita Electric Ind Co Ltd | Jig for forming end face protection film of semiconductor laser and method of forming the film, and semiconductor laser and its manufacturing method |
| JP2006185970A (en) * | 2004-12-24 | 2006-07-13 | Kyocera Corp | Masking spacer and its manufacturing method |
| US7892866B2 (en) * | 2008-01-10 | 2011-02-22 | Mitsubishi Electric Corporation | Method of manufacturing semiconductor laser using end-face-processing jig |
| CN109576676A (en) * | 2018-12-25 | 2019-04-05 | 西安立芯光电科技有限公司 | A kind of fixture for semiconductor laser side cavity surface film coating |
| WO2022054281A1 (en) * | 2020-09-14 | 2022-03-17 | 三菱電機株式会社 | Dummy bar and method for forming film on end faces of laser diode bar |
| JP7046294B1 (en) * | 2021-11-08 | 2022-04-01 | 三菱電機株式会社 | Optical semiconductor device |
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-
1998
- 1998-05-07 JP JP12436898A patent/JPH11317565A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002344070A (en) * | 2001-05-14 | 2002-11-29 | Furukawa Electric Co Ltd:The | Device for holding laser bar |
| EP1416597A1 (en) * | 2002-10-31 | 2004-05-06 | Agilent Technologies, Inc. - a Delaware corporation - | A method and a carrier for treating end facets of photonic devices |
| US6809007B2 (en) | 2002-10-31 | 2004-10-26 | Agilent Technologies, Inc. | Method and a carrier for treating end facets in photonic devices |
| KR20040041259A (en) * | 2002-11-09 | 2004-05-17 | 엘지전자 주식회사 | Method for depositing reflection layer on the facet of semiconductor laser diode chip bar |
| KR20040041263A (en) * | 2002-11-09 | 2004-05-17 | 엘지전자 주식회사 | Method for depositing reflection layer on the facet of semiconductor laser diode chip bar |
| KR20050068700A (en) * | 2003-12-30 | 2005-07-05 | 엘지전자 주식회사 | Method for depositing reflection layer on the facet of semiconductor laser diode chip bar |
| JP2005340333A (en) * | 2004-05-25 | 2005-12-08 | Matsushita Electric Ind Co Ltd | Jig for forming end face protection film of semiconductor laser and method of forming the film, and semiconductor laser and its manufacturing method |
| JP4637566B2 (en) * | 2004-12-24 | 2011-02-23 | 京セラ株式会社 | Masking spacer and manufacturing method thereof |
| JP2006185970A (en) * | 2004-12-24 | 2006-07-13 | Kyocera Corp | Masking spacer and its manufacturing method |
| US7892866B2 (en) * | 2008-01-10 | 2011-02-22 | Mitsubishi Electric Corporation | Method of manufacturing semiconductor laser using end-face-processing jig |
| CN109576676A (en) * | 2018-12-25 | 2019-04-05 | 西安立芯光电科技有限公司 | A kind of fixture for semiconductor laser side cavity surface film coating |
| CN109576676B (en) * | 2018-12-25 | 2023-12-29 | 西安立芯光电科技有限公司 | Clamp for coating side cavity surface of semiconductor laser |
| WO2022054281A1 (en) * | 2020-09-14 | 2022-03-17 | 三菱電機株式会社 | Dummy bar and method for forming film on end faces of laser diode bar |
| JPWO2022054281A1 (en) * | 2020-09-14 | 2022-03-17 | ||
| WO2022102052A1 (en) * | 2020-11-12 | 2022-05-19 | 三菱電機株式会社 | Method for forming end-surface film on laser diode bar |
| JPWO2022102052A1 (en) * | 2020-11-12 | 2022-05-19 | ||
| JP7046294B1 (en) * | 2021-11-08 | 2022-04-01 | 三菱電機株式会社 | Optical semiconductor device |
| WO2023079726A1 (en) * | 2021-11-08 | 2023-05-11 | 三菱電機株式会社 | Optical semiconductor device |
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