JPH11293090A - Sealing resin composition and semiconductor sealed device - Google Patents

Sealing resin composition and semiconductor sealed device

Info

Publication number
JPH11293090A
JPH11293090A JP11157698A JP11157698A JPH11293090A JP H11293090 A JPH11293090 A JP H11293090A JP 11157698 A JP11157698 A JP 11157698A JP 11157698 A JP11157698 A JP 11157698A JP H11293090 A JPH11293090 A JP H11293090A
Authority
JP
Japan
Prior art keywords
resin
resin composition
inorganic filler
dispersion
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11157698A
Other languages
Japanese (ja)
Inventor
Haruomi Hosokawa
晴臣 細川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Chemical Corp
Original Assignee
Toshiba Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Chemical Corp filed Critical Toshiba Chemical Corp
Priority to JP11157698A priority Critical patent/JPH11293090A/en
Publication of JPH11293090A publication Critical patent/JPH11293090A/en
Pending legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide sealing resin compositions excellent in storage stability under an ordinary temperature environment and capable of guaranteeing long- term reliability without affecting improved formulations of moisture resistance, reflow resistance, moldability or the like, and a semiconductor sealed devices. SOLUTION: A sealing resin compositions comprises (A) an epoxy resin; (B) a phenolic resin; (C) an inorganic filler; and (D) a curing promoter dispersed powder which is dispersed in a protective medium of a styrenic thermoplastic resin, the amount of the curing promoter contained being 15-30 wt.% relative to the dispersion and the average particle diameter of the dispersion being adjusted to 1-10 μm, as the essential components; and the amount of the inorganic filler (C) incorporated being 25-95 wt.%, based on the entire resin composition. Further, semiconductor sealed devices have chips sealed with a cured product of this composition.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、成形性、作業性、
長期保存安定性、耐リフロー性、信頼性に優れた封止用
樹脂組成物および半導体封止装置に関する。
TECHNICAL FIELD The present invention relates to moldability, workability,
The present invention relates to a sealing resin composition having excellent long-term storage stability, reflow resistance and reliability, and a semiconductor sealing device.

【0002】[0002]

【従来の技術】近年、半導体集積回路の分野において、
高集積化、高信頼性化の技術開発と同時に半導体装置の
実装工程の自動化が推進されている。例えばフラットパ
ッケージ型の半導体装置を回路基板に取り付ける場合
に、従来、リードピン毎に半田付けを行っていたが、最
近では、半導体装置全体を最高240 ℃に加熱した赤外線
(IR)リフロー炉に通して、半田漬けを行う方法が採
用されている。この対策として、フィラーの高充填化が
進められ、低粘度のレジンが多く用いられるようになっ
た。
2. Description of the Related Art In recent years, in the field of semiconductor integrated circuits,
At the same time as the development of high integration and high reliability technologies, automation of the mounting process of semiconductor devices has been promoted. For example, when attaching a flat package type semiconductor device to a circuit board, soldering has conventionally been performed for each lead pin. Recently, however, the entire semiconductor device has been passed through an infrared (IR) reflow furnace heated to a maximum of 240 ° C. A method of performing solder pickling has been adopted. As a countermeasure for this, high filling of fillers has been promoted, and low-viscosity resins have been widely used.

【0003】[0003]

【発明が解決しようとする課題】従来のノボラック型エ
ポキシ樹脂等のエポキシ樹脂、ノボラック型フェノール
樹脂および無機質充填剤からなる樹脂組成物によって封
止した半導体装置は、装置全体のIRリフローによる表
面実装を行うと耐湿性が低下するという欠点があった。
特に吸湿した半導体装置をIRリフローをさせると、封
止樹脂と半導体チップ、あるいは封止樹脂とリードフレ
ームの間の剥がれや、内部樹脂クラックが生じて著しい
耐湿性劣化を起こし、電極の腐蝕による断線や水分によ
るリーク電流を生じ、その結果、半導体装置は、長期間
の信頼性を保証することができないという欠点があっ
た。このため、耐湿性の影響が少なく、半導体装置全体
のIRリフローによる表面実装を行っても耐湿劣化の少
ない成形性の良い材料の開発が強く要望されていた。ま
た、フイラーを高充填化するための処方として、溶融粘
度の低いレジンが用いられている。このように低い軟化
点のレジンを用いるとエポキシ樹脂の保存安定性は概し
て低下するという欠点がある。
A semiconductor device encapsulated with a resin composition comprising a conventional epoxy resin such as a novolak type epoxy resin, a novolak type phenol resin, and an inorganic filler requires surface mounting of the entire device by IR reflow. There is a drawback that the moisture resistance is reduced when performing.
In particular, when the semiconductor device that has absorbed moisture is subjected to IR reflow, peeling between the sealing resin and the semiconductor chip, or between the sealing resin and the lead frame, and internal resin cracks occur, causing significant deterioration of moisture resistance and disconnection due to electrode corrosion. Leakage current due to moisture or moisture, and as a result, the semiconductor device has a drawback that long-term reliability cannot be guaranteed. For this reason, there has been a strong demand for the development of a material having a small influence on moisture resistance and good moldability with little moisture deterioration even when surface mounting is performed by IR reflow of the entire semiconductor device. Further, a resin having a low melt viscosity is used as a prescription for highly filling a filler. The use of a resin having such a low softening point has a disadvantage that the storage stability of an epoxy resin generally decreases.

【0004】本発明は、上記の欠点を解消するためにな
されたもので、常温での保存安定性に優れ、耐湿性、耐
IRリフロー性、成形性等の改善処方になんら影響を及
ぼさない封止用樹脂組成物および半導体封止装置を提供
しようとするものである。
The present invention has been made to solve the above-mentioned drawbacks, and has excellent storage stability at ordinary temperature, and has no influence on a prescription for improving moisture resistance, IR reflow resistance, moldability and the like. An object of the present invention is to provide a stopping resin composition and a semiconductor sealing device.

【0005】[0005]

【課題を解決するための手段】本発明者は、上記の目的
を達成しようと鋭意研究を重ねた結果、エポキシ樹脂
と、フェノール樹脂と、無機充填剤と、スチレン系熱可
塑性樹脂で保護された平均粒径が1 〜10μmでその含有
率が15〜30%の硬化促進剤分散粉末を用いることによっ
て、優れた長期保存安定性をもち、耐湿性、耐IRリフ
ロー性、成形性、作業性等の改善処方になんら影響を与
えない、樹脂組成物が得られることを見いだし、本発明
を完成したものである。
Means for Solving the Problems The inventors of the present invention have made intensive studies to achieve the above-mentioned object, and as a result, they have been protected with an epoxy resin, a phenol resin, an inorganic filler, and a styrene-based thermoplastic resin. By using a hardening agent-dispersed powder having an average particle size of 1 to 10 µm and a content of 15 to 30%, it has excellent long-term storage stability, moisture resistance, IR reflow resistance, moldability, workability, etc. It has been found that a resin composition having no influence on the prescription for improvement of the resin composition can be obtained, and the present invention has been completed.

【0006】即ち、本発明は、(A)エポキシ樹脂、
(B)フェノール樹脂、(C)無機質充填剤および
(D)硬化促進剤が保護媒質のスチレン系熱可塑性樹脂
中に分散し、硬化促進剤が分散物に対して15〜30重量%
の割合に含有するとともに分散物が平均粒径1 〜10μm
に調整された硬化促進剤分散粉末を必須成分とし、全体
の樹脂組成物に対して前記(C)の無機質充填剤を25〜
95重量%の割合で含有してなることを特徴とする封止用
樹脂組成物である。また、この封止用樹脂組成物の硬化
物によって、半導体チップが封止されてなることを特徴
とする半導体封止装置である。
That is, the present invention provides (A) an epoxy resin,
(B) a phenolic resin, (C) an inorganic filler and (D) a curing accelerator are dispersed in a styrene thermoplastic resin as a protective medium, and the curing accelerator is 15 to 30% by weight based on the dispersion.
And the dispersion has an average particle size of 1 to 10 μm.
The hardening accelerator dispersion powder adjusted as described above is an essential component, and the inorganic filler of (C) is added to the entire resin composition in an amount of 25 to
A sealing resin composition characterized in that it is contained in a proportion of 95% by weight. Further, there is provided a semiconductor sealing device wherein a semiconductor chip is sealed with a cured product of the sealing resin composition.

【0007】以下、本発明を詳細に説明する。Hereinafter, the present invention will be described in detail.

【0008】本発明に用いる(A)エポキシ樹脂は、エ
ポキシ基を2 個以上有するものであれば特に制限される
ものではなく使用される。具体的なものとしては、例え
The epoxy resin (A) used in the present invention is not particularly limited as long as it has two or more epoxy groups. Specifically, for example,

【0009】[0009]

【化1】 (但し、式中、nは0 又は1 以上の整数を表す)Embedded image (Where n represents 0 or an integer of 1 or more)

【0010】[0010]

【化2】 Embedded image

【0011】[0011]

【化3】 (但し、式中、nは0 又は1 以上の整数を表す)等が挙
げられるが、その他の一般の公知のエポキシ樹脂を単独
又は混合して使用することができる。
Embedded image (Wherein, n represents 0 or an integer of 1 or more). Other common epoxy resins can be used alone or in combination.

【0012】本発明に用いる(B)フェノール樹脂とし
ては、前記(A)のエポキシ樹脂のエポキシ基と反応し
得るフェノール性水酸基を2 個以上有するものであれば
特に制限するものではない。具体的なものとしては、例
えば
The phenolic resin (B) used in the present invention is not particularly limited as long as it has two or more phenolic hydroxyl groups capable of reacting with the epoxy group of the epoxy resin (A). Specifically, for example,

【0013】[0013]

【化4】 (但し、式中、nは0 又は1 以上の整数を表す)Embedded image (Where n represents 0 or an integer of 1 or more)

【0014】[0014]

【化5】 (但し、式中、nは0 又は1 以上の整数を表す)Embedded image (Where n represents 0 or an integer of 1 or more)

【0015】[0015]

【化6】 (但し、式中、nは0 又は1 以上の整数を表す)Embedded image (Where n represents 0 or an integer of 1 or more)

【0016】[0016]

【化7】 (但し、式中、nは0 又は1 以上の整数を表す)Embedded image (Where n represents 0 or an integer of 1 or more)

【0017】[0017]

【化8】 (但し、式中、nは0 又は1 以上の整数を表す)等が挙
げられ、これらは混合して用いることができる。
Embedded image (Wherein, n represents 0 or an integer of 1 or more), and these can be used as a mixture.

【0018】本発明に用いる(C)無機質充填剤として
は、不純物濃度が低く、最大粒径が90μm以下で、平均
粒径が30μm以下の無機質充填剤が好ましく使用され
る。平均粒径30μmを超えると耐湿性および成形性が劣
り好ましくない。無機質充填剤の具体的なものとして例
えば、シリカ粉末、アルミナ粉末、窒化ケイ素粉末、三
酸化アンチモン、タルク、炭酸カルシウム、チタンホワ
イト、クレー、マイカ、ベンガラ、ガラス繊維等が挙げ
られ、これらは単独又は 2種以上併用することができ
る。これらのなかでも特にシリカ粉末やアルミナ粉末が
好ましく、よく使用される。無機質充填剤の配合割合
は、全体の樹脂組成物に対して25〜95重量%含有するよ
うに配合することが好ましい。その割合が25重量%未満
では耐熱性、耐湿性、半田耐熱性、機械的特性および成
形性が悪くなり、また95重量%を超えるとカサバリが大
きくなり、成形性に劣り実用に適さない。
As the inorganic filler (C) used in the present invention, an inorganic filler having a low impurity concentration, a maximum particle diameter of 90 μm or less and an average particle diameter of 30 μm or less is preferably used. If the average particle size exceeds 30 μm, the moisture resistance and the moldability are poor, which is not preferable. Specific examples of the inorganic filler include, for example, silica powder, alumina powder, silicon nitride powder, antimony trioxide, talc, calcium carbonate, titanium white, clay, mica, red iron oxide, glass fiber, and the like. Two or more can be used in combination. Among these, silica powder and alumina powder are particularly preferable and are often used. It is preferable to mix the inorganic filler so that the inorganic filler is contained in an amount of 25 to 95% by weight based on the entire resin composition. If the proportion is less than 25% by weight, heat resistance, moisture resistance, solder heat resistance, mechanical properties and moldability will be poor, and if it exceeds 95% by weight, burrs will increase and the moldability will be poor, making it unsuitable for practical use.

【0019】本発明に用いる(D)硬化促進剤分散粉末
は、硬化促進剤が保護媒質のスチレン系熱可塑性樹脂中
に海島構造で取り込まれた形で分散したもので、分散さ
せた硬化促進剤が分散物に対して15〜30重量%の割合に
含有するとともに硬化促進剤を分散した分散物が平均粒
径1 〜10μmに調整された粉末である。好ましくは平均
粒径が1 〜10μmであるが、特に好ましくは3 〜5 μm
のものが良い。平均粒径が1 μm以下であると、硬化促
進剤がうまく取り込まれず、保存安定性の効果が劣り好
ましくない。また、平均粒径が10μmを超えると成形時
に硬化促進剤の放出がうまくいかず硬化不良を起こす可
能性があり、好ましくない。硬化促進剤の含有率は、15
〜30重量%が好ましく、特に好ましくは18〜23重量%で
ある。15重量%以下では硬化不良が発生しやすく、ま
た、30重量%を超えると保存安定性が劣り好ましくな
い。
The (D) curing accelerator dispersion powder used in the present invention is a dispersion in which a curing accelerator is incorporated in a styrene-based thermoplastic resin as a protective medium in a sea-island structure. Is a powder containing 15 to 30% by weight based on the dispersion and having the curing accelerator dispersed therein, the dispersion having an average particle diameter of 1 to 10 μm. The average particle size is preferably 1 to 10 μm, and particularly preferably 3 to 5 μm.
Is good. If the average particle size is 1 μm or less, the curing accelerator is not incorporated well, and the storage stability effect is poor, which is not preferable. On the other hand, if the average particle size exceeds 10 μm, the curing accelerator may not be released properly during molding, which may cause poor curing. The curing accelerator content is 15
It is preferably from 30 to 30% by weight, particularly preferably from 18 to 23% by weight. If it is less than 15% by weight, poor curing tends to occur, and if it exceeds 30% by weight, storage stability is poor, which is not preferable.

【0020】ここで用いられる硬化促進剤としては、リ
ン系硬化促進剤、イミダゾール系硬化促進剤、DBU系
硬化促進剤、その他の硬化促進剤等を広く使用調製する
ことができるが、好ましくはリン系硬化促進剤を使用す
るとその効果が十分に発揮できる。
As the curing accelerator used here, phosphorus-based curing accelerators, imidazole-based curing accelerators, DBU-based curing accelerators, and other curing accelerators can be widely used and prepared. When a system hardening accelerator is used, its effect can be sufficiently exhibited.

【0021】またここで用いるスチレン系熱可塑性樹脂
としては、ポリスチレン、ブタジエン変性ポリスチレ
ン、ポメチルスチレンのほか、スチレンやメタスチレン
の共重合樹脂が含まれる。
The styrene-based thermoplastic resin used here includes, in addition to polystyrene, butadiene-modified polystyrene and pomethylstyrene, copolymer resins of styrene and metastyrene.

【0022】本発明のエポキシ樹脂組成物は、前述した
エポキシ樹脂、フェノール樹脂、無機質充填剤およびス
チレン系熱可塑性樹脂で保護された平均粒径が1 〜10μ
mでその含有率が15〜30重量%の硬化促進剤分散粉末を
必須成分とするが、本発明の目的に反しない限度におい
て、また必要に応じて、例えば天然ワックス類、合成ワ
ックス類、直鎖脂肪酸の金属塩、酸アミド、エステル
類、パラフィン等の離型剤、塩素化パラフィン、ブロム
化トルエン、ヘキサブロムベンゼン、三酸化アンチモン
等の難燃剤、カーボンブラック、ベンガラ等の着色剤、
ゴム系やシリコーン系の低応力付与剤等を適宜添加配合
することができる。
The epoxy resin composition of the present invention has an average particle size of 1 to 10 μm protected by the aforementioned epoxy resin, phenol resin, inorganic filler and styrene thermoplastic resin.
The hardening agent-dispersed powder having a content of 15 to 30% by weight as an essential component is an essential component. However, as long as the object of the present invention is not adversely affected, and if necessary, for example, natural waxes, synthetic waxes, Release agents such as metal salts of chain fatty acids, acid amides, esters, and paraffin; flame retardants such as chlorinated paraffin, brominated toluene, hexabromobenzene, and antimony trioxide; coloring agents such as carbon black and red iron oxide;
A rubber-based or silicone-based low stress imparting agent or the like can be appropriately added and blended.

【0023】本発明の封止用樹脂組成物を成形材料とし
て調製する場合の一般的方法は、前述したエポキシ樹
脂、フェノール樹脂、無機質充填剤およびスチレン系熱
可塑性樹脂で保護された平均粒径が1 〜10μmでその含
有率が15〜30重量%の硬化促進剤分散粉末その他の成分
を配合し、ミキサー等によって十分均一に混合した後、
さらに熱ロールによる溶融混合処理またはニーダ等によ
る混合処理を行い、次いで冷却固化させ適当な大きさに
粉砕して成形材料とすることができる。こうして得られ
た成形材料は、半導体装置をはじめとする電子部品或い
は電気部品の封止、被覆、絶縁等に適用すれば常温での
優れた保存安定性をもちながら信頼性等に悪影響を与え
ることなく、成形品を得ることができる。
A general method for preparing the encapsulating resin composition of the present invention as a molding material is as follows: the average particle size protected by the above-described epoxy resin, phenol resin, inorganic filler and styrene-based thermoplastic resin is as follows. A hardening accelerator dispersed powder having a content of 1 to 10 μm and a content of 15 to 30% by weight is blended, and after sufficiently uniformly mixed by a mixer or the like,
Further, a melt-mixing process using a hot roll or a mixing process using a kneader or the like is performed, and then the mixture is solidified by cooling and pulverized to an appropriate size to obtain a molding material. If the molding material obtained in this way is applied to sealing, covering, insulating, etc. of electronic parts or electric parts including semiconductor devices, it has a bad influence on reliability etc. while having excellent storage stability at room temperature. And a molded article can be obtained.

【0024】また、本発明の半導体封止装置は、上述の
成形材料を用いて半導体チップを封止することにより容
易に製造することができる。封止を行う半導体チップと
しては、例えば集積回路、大規模集積回路、トランジス
タ、サイリスタ、ダイオード等で特に限定されるもので
はない。封止の最も一般的な方法としては、低圧トラン
スファー成形法があるが、射出成形、圧縮成形、注形等
による封止も可能である。成形材料で封止後加熱して硬
化させ、最終的にはこの硬化物によって封止された半導
体封止装置が得られる。加熱による硬化は、150 ℃以上
に加熱して硬化させることが望ましい。
Further, the semiconductor sealing device of the present invention can be easily manufactured by sealing a semiconductor chip using the above-mentioned molding material. The semiconductor chip to be sealed is not particularly limited to, for example, an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, and the like. The most common sealing method is a low pressure transfer molding method, but sealing by injection molding, compression molding, casting, or the like is also possible. After sealing with a molding material, it is heated and cured, and finally a semiconductor sealing device sealed with this cured product is obtained. The curing by heating is desirably performed by heating to 150 ° C. or more.

【0025】[0025]

【作用】本発明の封止用エポキシ樹脂組成物および半導
体封止装置は、スチレン系熱可塑性樹脂で保護された平
均粒径が1 〜10μmでその含有率が15〜30重量%の硬化
促進剤分散粉末を用いることにより、樹脂組成物の保存
安定性を大幅に向上させることができた。しかも、前述
したエポキシ樹脂とフェノール樹脂その他の添加剤によ
る樹脂組成物の成形性、フレームとの接着強さを向上さ
せるための処方にはなんら影響を与えることがない。
The epoxy resin composition for encapsulation and the semiconductor encapsulation device of the present invention have a mean particle size of 1 to 10 .mu.m protected by a styrene-based thermoplastic resin and a curing accelerator having a content of 15 to 30% by weight. By using the dispersed powder, the storage stability of the resin composition could be significantly improved. In addition, there is no influence on the moldability of the resin composition by the epoxy resin and the phenol resin and other additives, and the prescription for improving the bonding strength to the frame.

【0026】[0026]

【発明の実施の形態】次に本発明を実施例によって説明
するが、本発明はこれらの実施例によって限定されるも
のではない。以下の実施例および比較例において「%」
とは「重量%」を意味する。
Next, the present invention will be described with reference to examples, but the present invention is not limited to these examples. "%" In the following Examples and Comparative Examples
Means "% by weight".

【0027】実施例1 前記化2のエポキシ樹脂(エポキシ当量195 )5.0 %、
前記化7のフェノール樹脂(フェノール当量170 )4.0
%、溶融シリカ粉末89%、前記スチレン系熱可塑性樹脂
で保護された平均粒径が5 μmでトリフェニルホスフィ
ンを20%含有する硬化促進剤1.0 %およびエステル系ワ
ックス類1.0 %を常温で混合し、さらに90〜95 ℃で混
練冷却した後、粉砕して成形材料(A)を製造した。
Example 1 5.0% of the epoxy resin of the above formula (epoxy equivalent: 195),
Phenol resin of the above formula (phenol equivalent 170) 4.0
%, Fused silica powder 89%, a hardening accelerator 1.0% containing 20% triphenylphosphine having an average particle size of 5 μm and protected by the styrene-based thermoplastic resin, and 1.0% ester waxes were mixed at room temperature. After further kneading and cooling at 90 to 95 ° C, the mixture was pulverized to produce a molding material (A).

【0028】実施例2 前記化2のエポキシ樹脂(エポキシ当量195 )5.0 %、
前記化7のフェノール樹脂(フェノール当量170 )4.0
%、溶融シリカ粉末89%、前記スチレン系熱可塑性樹脂
で保護された平均粒径が10μmでトリフェニルホスフィ
ンを20%含有する硬化促進剤1.0 %およびエステル系ワ
ックス類1.0 %を常温で混合し、さらに90〜95 ℃で混
練冷却した後、粉砕して成形材料(B)を製造した。
Example 2 5.0% of the epoxy resin of the above formula (epoxy equivalent: 195),
Phenol resin of the above formula (phenol equivalent 170) 4.0
%, A fused silica powder 89%, a curing accelerator 1.0% having an average particle diameter of 10 μm protected by the styrene-based thermoplastic resin and containing 20% of triphenylphosphine, and 1.0% of an ester-based wax mixed at room temperature. Further, after kneading and cooling at 90 to 95 ° C., the mixture was pulverized to produce a molding material (B).

【0029】比較例1 前記化2のエポキシ樹脂(エポキシ当量195 )5.0 %、
前記化7のフェノール樹脂(フェノール当量170 )4.0
%、溶融シリカ粉末89%、前記スチレン系熱可塑性樹脂
で保護された平均粒径が20μmでトリフェニルホスフィ
ンを14%含有する硬化促進剤1.0 %およびエステル系ワ
ックス類1.0 %を常温で混合し、さらに90〜95 ℃で混
練冷却した後、粉砕して成形材料(C)を製造した。
Comparative Example 1 5.0% of the epoxy resin of the above formula (epoxy equivalent: 195),
Phenol resin of the above formula (phenol equivalent 170) 4.0
%, A fused silica powder 89%, a curing accelerator 1.0% having an average particle diameter of 20 μm protected by the styrene-based thermoplastic resin and containing 14% of triphenylphosphine, and 1.0% of an ester-based wax mixed at room temperature. Further, after kneading and cooling at 90 to 95 ° C., the mixture was pulverized to produce a molding material (C).

【0030】比較例2 前記化2のエポキシ樹脂(エポキシ当量195 )5.17%、
前記化7のフェノール樹脂(フェノール当量170 )4.17
%、溶融シリカ粉末89.5%、トリフェニルホスフィン0.
16%およびエステル系ワックス類1.0 %を常温で混合
し、さらに90〜95℃で混練冷却した後、粉砕して成形材
料(D)を製造した。
Comparative Example 2 5.17% of the epoxy resin of the above formula (epoxy equivalent: 195),
Phenol resin of the above formula (phenol equivalent 170) 4.17
%, Fused silica powder 89.5%, triphenylphosphine 0.
16% and 1.0% of ester waxes were mixed at room temperature, kneaded and cooled at 90 to 95 ° C, and then pulverized to produce a molding material (D).

【0031】こうして製造した成形材料(A)〜(D)
を用いて175 ℃,2 分間の条件でトランスファー成形し
た後、175 ℃で8 時間アフターキュアーして試験片を作
成した。これらの成形材料と試験片について、成形性、
ゲルタイム、高化式フローテスターによる溶融粘度、吸
水率(PCT)、ガラス転移温度、フレーム材である4
2合金・銀メッキとの接着強さ、スパイラルフロー、ス
パイラルフローの経時変化による保存安定性、および耐
リフロー性を測定した。以上の測定結果を表1及び表2
に示したが、本発明の顕著な効果を確認することができ
た。
The molding materials (A) to (D) thus produced
After transfer molding at 175 ° C for 2 minutes using, the specimen was prepared by after-curing at 175 ° C for 8 hours. For these molding materials and test pieces, moldability,
Gel time, melt viscosity by Koka type flow tester, water absorption (PCT), glass transition temperature, frame material 4
The adhesive strength to alloy 2 and silver plating, spiral flow, storage stability of spiral flow over time, and reflow resistance were measured. Table 1 and Table 2 show the above measurement results.
As described above, the remarkable effect of the present invention could be confirmed.

【0032】[0032]

【表1】 *1 :測定温度は180 ℃である。 *2 :測定温度は180 ℃である。 *3 :成形材料を175 ℃,2 分間の条件でトランスファー成形し、175 ℃,8 時 間アフターキュアをして成形品を作製した。これを127 ℃,2 気圧の飽和水蒸気 中に24時間放置し、増加した重量によって求めた。 *4 :吸水率の試験と同様な成形品から、2.5 ×2.5 ×15.0〜20.0の寸法のサン プルを作製し、熱機械分析装置DL−1500H(真空理工社製、商品名)を用 い、昇温速度5 ℃/minで測定した。[Table 1] * 1: The measurement temperature is 180 ° C. * 2: The measurement temperature is 180 ° C. * 3: The molding material was transfer-molded at 175 ° C for 2 minutes, and after-cured at 175 ° C for 8 hours to produce a molded product. This was left for 24 hours in saturated steam at 127 ° C. and 2 atm, and the weight was determined. * 4: A sample with dimensions of 2.5 × 2.5 × 15.0 to 20.0 was prepared from the same molded product as in the test for water absorption, and a thermomechanical analyzer DL-1500H (trade name, manufactured by Vacuum Riko Co., Ltd.) was used. The measurement was performed at a heating rate of 5 ° C./min.

【0033】[0033]

【表2】 *5 :スパイラルの測定温度は175 ℃であり、初期は25℃の環境に放置した材料 である。 *6 :成形材料を175 ℃,90秒間の条件で、6.2 mm×6.2 mmの評価用素子を 用い、14.5mm×14.5mm×1.4 mmVQFPを成形し、175 ℃で8 時間アフタ ーキュアを行った。次いでこのパッケージを85℃、相対湿度60%及び85%の雰囲 気中に168 時間放置して吸湿処理を行った後、これを最高温度240 ℃のIRリフ ロー炉に3 回通した。この時点でパッケージのクラック発生及びリードフレーム との剥離の発生率を調べた。[Table 2] * 5: The spiral measurement temperature is 175 ° C, and the material is initially left in an environment of 25 ° C. * 6: A 14.5 mm x 14.5 mm x 1.4 mm VQFP was molded using a 6.2 mm x 6.2 mm evaluation element under the conditions of 175 ° C for 90 seconds, and after-curing was performed at 175 ° C for 8 hours. Next, the package was left in an atmosphere of 85 ° C. and a relative humidity of 60% and 85% for 168 hours to perform a moisture absorption treatment, and then passed through an IR reflow furnace having a maximum temperature of 240 ° C. three times. At this point, the occurrence of cracks in the package and the occurrence of peeling from the lead frame were examined.

【0034】[0034]

【発明の効果】以上の説明および表1、表2から明らか
なように、本発明の封止用樹脂組成物は、常温での保存
安定性に優れ、その他特性の特性値になんら影響を与え
ないため、高い信頼性をそなえたままの半導体封止装置
を得ることができる。
As is clear from the above description and Tables 1 and 2, the encapsulating resin composition of the present invention has excellent storage stability at room temperature and has no influence on other characteristic values. Therefore, a semiconductor sealing device having high reliability can be obtained.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI H01L 23/31 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 23/31

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 (A)エポキシ樹脂、(B)フェノール
樹脂、(C)無機質充填剤および(D)硬化促進剤が保
護媒質のスチレン系熱可塑性樹脂中に分散し、硬化促進
剤が分散物に対して15〜30重量%の割合に含有するとと
もに分散物が平均粒径1 〜10μmに調整された硬化促進
剤分散粉末を必須成分とし、全体の樹脂組成物に対して
前記(C)の無機質充填剤を25〜95重量%の割合で含有
してなることを特徴とする封止用樹脂組成物。
1. An epoxy resin, (B) a phenolic resin, (C) an inorganic filler and (D) a curing accelerator are dispersed in a styrene thermoplastic resin as a protective medium, and the curing accelerator is a dispersion. And a hardening accelerator-dispersed powder whose dispersion has been adjusted to an average particle size of 1 to 10 μm as an essential component, and which is contained in the above (C) based on the entire resin composition. A sealing resin composition comprising an inorganic filler in a ratio of 25 to 95% by weight.
【請求項2】 (A)エポキシ樹脂、(B)フェノール
樹脂、(C)無機質充填剤および(D)硬化促進剤が保
護媒質のスチレン系熱可塑性樹脂中に分散し、硬化促進
剤が分散物に対して15〜30重量%の割合に含有するとと
もに分散物が平均粒径1 〜10μmに調整された硬化促進
剤分散粉末を必須成分とし、全体の樹脂組成物に対して
前記(C)の無機質充填剤を25〜95重量%の割合で含有
した封止用樹脂組成物の硬化物によって、半導体チップ
が封止されてなることを特徴とする半導体封止装置。
2. An epoxy resin, (B) a phenolic resin, (C) an inorganic filler and (D) a curing accelerator are dispersed in a styrene thermoplastic resin as a protective medium, and the curing accelerator is a dispersion. And a hardening accelerator-dispersed powder whose dispersion has been adjusted to an average particle size of 1 to 10 μm as an essential component, and which is contained in the above (C) based on the entire resin composition. A semiconductor sealing device wherein a semiconductor chip is sealed with a cured product of a sealing resin composition containing an inorganic filler at a ratio of 25 to 95% by weight.
JP11157698A 1998-04-07 1998-04-07 Sealing resin composition and semiconductor sealed device Pending JPH11293090A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11157698A JPH11293090A (en) 1998-04-07 1998-04-07 Sealing resin composition and semiconductor sealed device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11157698A JPH11293090A (en) 1998-04-07 1998-04-07 Sealing resin composition and semiconductor sealed device

Publications (1)

Publication Number Publication Date
JPH11293090A true JPH11293090A (en) 1999-10-26

Family

ID=14564885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11157698A Pending JPH11293090A (en) 1998-04-07 1998-04-07 Sealing resin composition and semiconductor sealed device

Country Status (1)

Country Link
JP (1) JPH11293090A (en)

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