JPH11282012A - アクティブマトリクス基板および液晶表示装置 - Google Patents
アクティブマトリクス基板および液晶表示装置Info
- Publication number
- JPH11282012A JPH11282012A JP8466098A JP8466098A JPH11282012A JP H11282012 A JPH11282012 A JP H11282012A JP 8466098 A JP8466098 A JP 8466098A JP 8466098 A JP8466098 A JP 8466098A JP H11282012 A JPH11282012 A JP H11282012A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- interlayer insulating
- pad
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 64
- 239000011159 matrix material Substances 0.000 title claims abstract description 44
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 21
- 239000011229 interlayer Substances 0.000 claims abstract description 100
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 30
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 18
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 281
- 238000000034 method Methods 0.000 claims description 21
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- 238000005229 chemical vapour deposition Methods 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims 1
- 229920001709 polysilazane Polymers 0.000 abstract description 16
- 238000005520 cutting process Methods 0.000 description 24
- 230000005611 electricity Effects 0.000 description 14
- 230000003068 static effect Effects 0.000 description 14
- 238000005530 etching Methods 0.000 description 12
- 239000012535 impurity Substances 0.000 description 11
- 239000010410 layer Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000010304 firing Methods 0.000 description 8
- -1 phosphorous ions Chemical class 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229920000592 inorganic polymer Polymers 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8466098A JPH11282012A (ja) | 1998-03-30 | 1998-03-30 | アクティブマトリクス基板および液晶表示装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8466098A JPH11282012A (ja) | 1998-03-30 | 1998-03-30 | アクティブマトリクス基板および液晶表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11282012A true JPH11282012A (ja) | 1999-10-15 |
| JPH11282012A5 JPH11282012A5 (enExample) | 2004-08-05 |
Family
ID=13836891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8466098A Pending JPH11282012A (ja) | 1998-03-30 | 1998-03-30 | アクティブマトリクス基板および液晶表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11282012A (enExample) |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001296552A (ja) * | 2000-04-13 | 2001-10-26 | Mitsubishi Electric Corp | 半導体装置、液晶表示装置、半導体装置の製造方法および液晶表示装置の製造方法 |
| KR20030046102A (ko) * | 2001-12-05 | 2003-06-12 | 삼성전자주식회사 | 반사형 액정 표시 장치용 박막 트랜지스터 기판 및 그의제조 방법 |
| JP2003172944A (ja) * | 2001-09-28 | 2003-06-20 | Hitachi Ltd | 表示装置 |
| KR100443831B1 (ko) * | 2001-12-20 | 2004-08-09 | 엘지.필립스 엘시디 주식회사 | 액정표시소자의 제조 방법 |
| JP2005301308A (ja) * | 2001-09-28 | 2005-10-27 | Hitachi Ltd | 表示装置および液晶表示装置 |
| KR100603336B1 (ko) | 2004-04-07 | 2006-07-20 | 삼성에스디아이 주식회사 | 전계 발광 디스플레이 장치 및 이의 제조 방법 |
| KR100625996B1 (ko) | 2004-04-02 | 2006-09-20 | 삼성에스디아이 주식회사 | 전계 발광 디스플레이 장치 |
| CN100371819C (zh) * | 2003-10-14 | 2008-02-27 | Lg.菲利浦Lcd株式会社 | 液晶显示面板及其制造方法 |
| JP2008181138A (ja) * | 2000-02-22 | 2008-08-07 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| WO2009022517A1 (ja) * | 2007-08-10 | 2009-02-19 | Sharp Kabushiki Kaisha | 配線基板、及び、液晶表示装置 |
| WO2009022522A1 (ja) * | 2007-08-10 | 2009-02-19 | Sharp Kabushiki Kaisha | 配線基板、及び、液晶表示装置 |
| JP2011138136A (ja) * | 1999-10-26 | 2011-07-14 | Semiconductor Energy Lab Co Ltd | 発光装置および電子機器 |
| US8310645B2 (en) | 2008-06-25 | 2012-11-13 | Sharp Kabushiki Kaisha | Wiring board and liquid crystal display device |
| US9704996B2 (en) | 2000-04-12 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN107422551A (zh) * | 2017-07-25 | 2017-12-01 | 武汉天马微电子有限公司 | 一种显示装置 |
| JP2019012833A (ja) * | 2012-03-14 | 2019-01-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2019167239A1 (ja) * | 2018-03-01 | 2019-09-06 | シャープ株式会社 | 表示装置及び表示装置の製造方法 |
| US11955473B2 (en) | 2004-07-05 | 2024-04-09 | 138 East Lcd Advancements Limited | Semiconductor device, display device, and electronic apparatus |
-
1998
- 1998-03-30 JP JP8466098A patent/JPH11282012A/ja active Pending
Cited By (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011138136A (ja) * | 1999-10-26 | 2011-07-14 | Semiconductor Energy Lab Co Ltd | 発光装置および電子機器 |
| US9391132B2 (en) | 1999-10-26 | 2016-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US8933624B2 (en) | 1999-10-26 | 2015-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US9318610B2 (en) | 2000-02-22 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP2011141552A (ja) * | 2000-02-22 | 2011-07-21 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| JP2019197232A (ja) * | 2000-02-22 | 2019-11-14 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| US9869907B2 (en) | 2000-02-22 | 2018-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP2008181138A (ja) * | 2000-02-22 | 2008-08-07 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| JP2013101352A (ja) * | 2000-02-22 | 2013-05-23 | Semiconductor Energy Lab Co Ltd | 液晶表示装置、表示モジュール及び電子機器 |
| JP2012185504A (ja) * | 2000-02-22 | 2012-09-27 | Semiconductor Energy Lab Co Ltd | 表示装置及び電子機器 |
| US9704996B2 (en) | 2000-04-12 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2001296552A (ja) * | 2000-04-13 | 2001-10-26 | Mitsubishi Electric Corp | 半導体装置、液晶表示装置、半導体装置の製造方法および液晶表示装置の製造方法 |
| US7471349B2 (en) | 2001-09-28 | 2008-12-30 | Hitachi, Ltd. | Display device |
| JP2003172944A (ja) * | 2001-09-28 | 2003-06-20 | Hitachi Ltd | 表示装置 |
| US7821584B2 (en) | 2001-09-28 | 2010-10-26 | Hitachi, Ltd. | Display device |
| CN100370319C (zh) * | 2001-09-28 | 2008-02-20 | 株式会社日立制作所 | 显示装置 |
| JP2005301308A (ja) * | 2001-09-28 | 2005-10-27 | Hitachi Ltd | 表示装置および液晶表示装置 |
| KR20030046102A (ko) * | 2001-12-05 | 2003-06-12 | 삼성전자주식회사 | 반사형 액정 표시 장치용 박막 트랜지스터 기판 및 그의제조 방법 |
| KR100443831B1 (ko) * | 2001-12-20 | 2004-08-09 | 엘지.필립스 엘시디 주식회사 | 액정표시소자의 제조 방법 |
| CN100371819C (zh) * | 2003-10-14 | 2008-02-27 | Lg.菲利浦Lcd株式会社 | 液晶显示面板及其制造方法 |
| KR100625996B1 (ko) | 2004-04-02 | 2006-09-20 | 삼성에스디아이 주식회사 | 전계 발광 디스플레이 장치 |
| KR100603336B1 (ko) | 2004-04-07 | 2006-07-20 | 삼성에스디아이 주식회사 | 전계 발광 디스플레이 장치 및 이의 제조 방법 |
| US11955473B2 (en) | 2004-07-05 | 2024-04-09 | 138 East Lcd Advancements Limited | Semiconductor device, display device, and electronic apparatus |
| US8319932B2 (en) | 2007-08-10 | 2012-11-27 | Sharp Kabushiki Kaisha | Wiring board and liquid crystal display device |
| WO2009022517A1 (ja) * | 2007-08-10 | 2009-02-19 | Sharp Kabushiki Kaisha | 配線基板、及び、液晶表示装置 |
| WO2009022522A1 (ja) * | 2007-08-10 | 2009-02-19 | Sharp Kabushiki Kaisha | 配線基板、及び、液晶表示装置 |
| US8310645B2 (en) | 2008-06-25 | 2012-11-13 | Sharp Kabushiki Kaisha | Wiring board and liquid crystal display device |
| JP2019012833A (ja) * | 2012-03-14 | 2019-01-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN107422551A (zh) * | 2017-07-25 | 2017-12-01 | 武汉天马微电子有限公司 | 一种显示装置 |
| WO2019167239A1 (ja) * | 2018-03-01 | 2019-09-06 | シャープ株式会社 | 表示装置及び表示装置の製造方法 |
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Legal Events
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Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20051006 |
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