JPH11274018A - 複合部材の分離方法および半導体基体の作製方法 - Google Patents

複合部材の分離方法および半導体基体の作製方法

Info

Publication number
JPH11274018A
JPH11274018A JP28800898A JP28800898A JPH11274018A JP H11274018 A JPH11274018 A JP H11274018A JP 28800898 A JP28800898 A JP 28800898A JP 28800898 A JP28800898 A JP 28800898A JP H11274018 A JPH11274018 A JP H11274018A
Authority
JP
Japan
Prior art keywords
layer
substrate
composite member
wafer
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP28800898A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11274018A5 (enExample
Inventor
Kazuaki Omi
和明 近江
Kiyobumi Sakaguchi
清文 坂口
Kazutaka Yanagida
一隆 柳田
Takao Yonehara
隆夫 米原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP28800898A priority Critical patent/JPH11274018A/ja
Publication of JPH11274018A publication Critical patent/JPH11274018A/ja
Publication of JPH11274018A5 publication Critical patent/JPH11274018A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP28800898A 1998-10-09 1998-10-09 複合部材の分離方法および半導体基体の作製方法 Withdrawn JPH11274018A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28800898A JPH11274018A (ja) 1998-10-09 1998-10-09 複合部材の分離方法および半導体基体の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28800898A JPH11274018A (ja) 1998-10-09 1998-10-09 複合部材の分離方法および半導体基体の作製方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP7734798A Division JP2877800B2 (ja) 1997-03-27 1998-03-25 複合部材の分離方法、分離された部材、分離装置、半導体基体の作製方法および半導体基体

Publications (2)

Publication Number Publication Date
JPH11274018A true JPH11274018A (ja) 1999-10-08
JPH11274018A5 JPH11274018A5 (enExample) 2005-09-08

Family

ID=17724619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28800898A Withdrawn JPH11274018A (ja) 1998-10-09 1998-10-09 複合部材の分離方法および半導体基体の作製方法

Country Status (1)

Country Link
JP (1) JPH11274018A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030003110A (ko) * 2001-06-29 2003-01-09 캐논 가부시끼가이샤 부재의 분리방법 및 분리장치
JP2008130884A (ja) * 2006-11-22 2008-06-05 Shin Etsu Chem Co Ltd Ｓｏｑ基板およびｓｏｑ基板の製造方法
JP2010505651A (ja) * 2006-10-06 2010-02-25 コミッサリア タ レネルジー アトミーク 積層構造体を分離する装置及び関連する方法
WO2013035590A1 (en) * 2011-09-09 2013-03-14 Tokyo Electron Limited Separation method, computer storage medium, and separation system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030003110A (ko) * 2001-06-29 2003-01-09 캐논 가부시끼가이샤 부재의 분리방법 및 분리장치
JP2010505651A (ja) * 2006-10-06 2010-02-25 コミッサリア タ レネルジー アトミーク 積層構造体を分離する装置及び関連する方法
JP2008130884A (ja) * 2006-11-22 2008-06-05 Shin Etsu Chem Co Ltd Ｓｏｑ基板およびｓｏｑ基板の製造方法
WO2013035590A1 (en) * 2011-09-09 2013-03-14 Tokyo Electron Limited Separation method, computer storage medium, and separation system
JP2013058711A (ja) * 2011-09-09 2013-03-28 Tokyo Electron Ltd 剥離方法、プログラム、コンピュータ記憶媒体及び剥離システム

Similar Documents

Publication Publication Date Title
JP2877800B2 (ja) 複合部材の分離方法、分離された部材、分離装置、半導体基体の作製方法および半導体基体
US6475323B1 (en) Method and apparatus for separating composite member using fluid
US6376332B1 (en) Composite member and separating method therefor, bonded substrate stack and separating method therefor, transfer method for transfer layer, and SOI substrate manufacturing method
US6391743B1 (en) Method and apparatus for producing photoelectric conversion device
JP4365920B2 (ja) 分離方法及び半導体基板の製造方法
JP4323577B2 (ja) 分離方法および半導体基板の製造方法
EP1107295A2 (en) Composite member separating method, thin film manufacturing method, and composite member separating apparatus
EP0938129A1 (en) Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof
JPH115064A (ja) 試料の分離装置及びその方法並びに基板の製造方法
JP2001230393A (ja) 複合部材の分離方法及び薄膜の製造方法並びに複合部材の分離装置
JPH11274018A (ja) 複合部材の分離方法および半導体基体の作製方法
JP2001094081A (ja) 試料の分離装置及び分離方法並びに基板の製造方法
JP2001177080A (ja) 複合部材の分離方法および貼り合わせ部材の製造方法
JPH11243039A (ja) 半導体部材の製造方法および半導体部材
JPH11195570A (ja) 物体の分離装置及びその方法並びに半導体基体の製造方法
JPH11288859A (ja) 部材の分離装置及び処理装置
JP2000068173A (ja) 試料の分離装置及び支持装置並びに分離方法
JPH11243040A (ja) 試料の分離装置及び分離方法並びに基板の製造方法
JPH11288860A (ja) 部材の分離方法及び半導体基板の製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050317

A621 Written request for application examination

Effective date: 20050317

Free format text: JAPANESE INTERMEDIATE CODE: A621

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20061115