JPH11271965A5 - - Google Patents

Info

Publication number
JPH11271965A5
JPH11271965A5 JP1998078895A JP7889598A JPH11271965A5 JP H11271965 A5 JPH11271965 A5 JP H11271965A5 JP 1998078895 A JP1998078895 A JP 1998078895A JP 7889598 A JP7889598 A JP 7889598A JP H11271965 A5 JPH11271965 A5 JP H11271965A5
Authority
JP
Japan
Prior art keywords
resist film
group
pattern
leaving
formation method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998078895A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11271965A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10078895A priority Critical patent/JPH11271965A/ja
Priority claimed from JP10078895A external-priority patent/JPH11271965A/ja
Publication of JPH11271965A publication Critical patent/JPH11271965A/ja
Publication of JPH11271965A5 publication Critical patent/JPH11271965A5/ja
Pending legal-status Critical Current

Links

JP10078895A 1998-03-26 1998-03-26 パターン形成方法 Pending JPH11271965A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10078895A JPH11271965A (ja) 1998-03-26 1998-03-26 パターン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10078895A JPH11271965A (ja) 1998-03-26 1998-03-26 パターン形成方法

Publications (2)

Publication Number Publication Date
JPH11271965A JPH11271965A (ja) 1999-10-08
JPH11271965A5 true JPH11271965A5 (enExample) 2004-07-08

Family

ID=13674558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10078895A Pending JPH11271965A (ja) 1998-03-26 1998-03-26 パターン形成方法

Country Status (1)

Country Link
JP (1) JPH11271965A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3433153B2 (ja) 2000-03-22 2003-08-04 株式会社東芝 パターン形成材料、パターン形成方法、及び露光用マスクの製造方法
JP3886358B2 (ja) * 2001-10-31 2007-02-28 松下電器産業株式会社 パターン形成方法
US7090963B2 (en) 2003-06-25 2006-08-15 International Business Machines Corporation Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging
US7300741B2 (en) 2006-04-25 2007-11-27 International Business Machines Corporation Advanced chemically amplified resist for sub 30 nm dense feature resolution

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