JPH11269645A - Chemical vapor deposition system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a CVD system capable of improving the quality of a film-formed body, preventing the occurrence of defects of the film-formed body, realizing continuous film formation for a long time, improving the working ratio and improving the productivity. SOLUTION: In this CVD device, belt-like film formation preventing mask 15 preventing film formation on the part unsuitable for film formation in a treating chamber system and a mask running mechanism running the film formation preventing mask 15 in the treating chamber system. The film formation preventing mask 15 is formed of a high polymer resin film having a glass transition temp. of >=60 deg.C, a high polymer resin film whose thickness is set to the range of 1 to 100 μm or a high polymer resin film whose surface roughness is set to the range of 1 to 100 nm.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a chemical vapor deposition apparatus (hereinafter, simply referred to as a CVD apparatus). In particular, the present invention relates to a CVD apparatus capable of forming a film continuously for a long time. Furthermore, the present invention relates to a technique that is effective when applied to a CVD apparatus that continuously forms a film on a long-sized substrate such as a tape-shaped magnetic recording medium for a long time.

[0002]

2. Description of the Related Art A CVD method for forming a film of the same or different material on a substrate by gas decomposition utilizing a chemical reaction in a vacuum system (processing chamber) is generally known. Especially C
The VD method is an indispensable film forming method in the semiconductor manufacturing technology field and the liquid crystal manufacturing technology field. A CVD apparatus used in the semiconductor manufacturing technology field uses a semiconductor wafer as a base material, and for example, a silicon thin film, a silicon oxide thin film, or the like is formed on the semiconductor wafer. A CVD apparatus used in the field of liquid crystal manufacturing technology uses a glass substrate as a base material, and a silicon thin film, a silicon oxide thin film, and the like are similarly formed on the glass substrate. Both the semiconductor wafer and the glass substrate are plate-shaped substrates.

On the other hand, in the field of magnetic recording medium manufacturing technology and packaging material manufacturing technology, a polymer resin film is used as a base material, and a thin film such as a protective film is formed on the surface of the polymer resin film by a CVD method. Techniques for filming are being developed.
FIG. 7 is a schematic front view showing a main part of a plasma CVD apparatus according to the prior art, and FIG. 8 is a plasma CV viewed from the direction of arrow A in FIG.
It is a schematic side view of D apparatus. The plasma CVD apparatus shown in FIGS. 7 and 8 forms a protective film on a tape-shaped magnetic recording medium such as a magnetic tape and a video tape. This CVD apparatus includes a plasma generation source 1, a cooling roll 2, transport rolls 3A and 3B, and a fixed type film formation preventing mask 5 disposed in a vacuum system. Although not shown, a film forming gas supply system, a vacuum generator, and the like are connected to the plasma CVD apparatus.

In this type of plasma CVD apparatus, a tape-like base material 4 having a length of several thousand to several tens of thousands of meters, for example, a supply roll (not shown) wound around a polymer resin film is set in the apparatus. You. The base material 4 supplied from the supply roll includes a transport roll 3A, a cooling roll 2, and a transport roll 3B.
Are wound on a winding roll (not shown). The plasma generation source 1 generates plasma, promotes decomposition of a film forming gas, and improves film forming performance. Cooling roll 2
Transports the substrate 4 while placing it, and cools the substrate 4. All of the substrates 4 wound around the supply rolls are continuously formed into a film. Since the polymer resin film as the base material 4 has lower heat resistance than a semiconductor wafer or a glass substrate,
It is necessary to cool the substrate 4 by the cooling roll 2.

FIG. 9 is an enlarged sectional view of a film forming region of a plasma CVD apparatus. As shown in FIGS. 7 to 9, the film formation preventing mask 5 is provided in a film formation area between the plasma generation source 1 and the cooling roll 2 at a portion where film formation is inappropriate. Specifically, the film formation preventing mask 5 is provided in an area covering the surface of the cooling roll 2 at the end of the substrate 4 in order to prevent film formation on the surface of the cooling roll 2.

[0006]

In the above-described plasma CVD apparatus according to the prior art, the following points are not considered.

(1) In the film formation region of the plasma CVD apparatus, a protective film is formed on the surface of the substrate 4 by chemical vapor deposition, and at the same time, the protective film is formed on the film formation preventing mask 5. Adheres as unnecessary deposits. In particular, since this type of plasma CVD apparatus continuously forms a film on the tape-shaped substrate 4 for a long time, the deposition amount of the deposit is always large on the film formation preventing mask 5 fixed in the film formation region. Become. For this reason, during the film formation, the attached matter attached to the film formation preventing mask 5 is peeled off, and the peeled attached matter adheres to the surface of the substrate 4 as dust,
The quality of the magnetic recording medium decreases. Furthermore, if the amount of dust attached is large, the magnetic recording medium itself becomes defective.

(2) Since the generation of the above-mentioned dust becomes a problem, it is not possible to carry out continuous film formation for a long time in a plasma CVD apparatus.

(3) Deposits adhering to the film formation preventing mask 5 can be removed by regular maintenance. The maintenance is performed by breaking the vacuum state in the vacuum system, opening the vacuum chamber (chamber), and removing the deposits by a manual operation. When the maintenance is completed, the vacuum system is formed again, and the film is formed. For this reason, the operation rate of the plasma CVD apparatus is reduced, and the productivity is reduced.

(4) Further, the film formation preventing mask 5 disposed in the film formation region causes a subtle change in the flow of the film formation gas. The film thickness becomes uneven.

The present invention has been made to solve the above problems. Accordingly, an object of the present invention is to solve the problems caused by the deposits adhering to the film formation preventing mask, to improve the quality of the film formation object, and to prevent the occurrence of defective products of the film formation object. It is to provide a device.

It is a further object of the present invention to provide a CVD apparatus capable of realizing continuous film formation for a long time.

It is a further object of the present invention to provide a CVD apparatus capable of improving the operation rate and improving the productivity.

It is a further object of the present invention to provide a CVD apparatus capable of making the film thickness uniform.

[0015]

Means for Solving the Problems In order to solve the above problems, a first feature of the present invention is to form a strip-shaped film in a CVD apparatus to prevent a film from being formed on a film formation inappropriate portion in a processing chamber system. The present invention includes a prevention mask and a mask traveling mechanism for traveling the film formation prevention mask in the processing chamber system.

In the CVD apparatus configured as described above, the strip-shaped film formation preventing mask continuously passes through the film formation region by the mask traveling mechanism. Deposits adhere to the film formation preventing mask running in the film formation region, but since the staying time in the film formation region is short, the amount of the deposits is small. Therefore,
The attachments do not drop from the mask, dust does not adhere to the base material, and the quality of the film formation object can be prevented from being deteriorated, and the generation of defective products can be prevented.

Further, since the amount of the adhered substance can be reduced, continuous film formation for a long time can be realized. Similarly, the amount of deposits can be reduced and the number of maintenance operations can be reduced, so that the operation rate can be improved and the productivity can be improved. further,
Since there is no fixed film-forming prevention mask, the flow of film-forming gas and film-forming particles is stabilized, and the film thickness can be made uniform.

Further, a first feature of the present invention is that the film formation preventing mask is formed of a polymer resin film having a glass transition temperature of 60 ° C. or higher. In the CVD apparatus configured as described above, wrinkles and cuts do not occur during the movement of the film formation preventing mask, and the film formation preventing mask can run stably.

A second feature of the present invention is that the film formation preventing mask is formed of a polymer resin film having a film thickness set within a range of 1 μm to 100 μm. In the CVD apparatus configured as described above, wrinkles and meandering do not occur during traveling of the film formation prevention mask, and the film formation prevention mask can run stably.

A third feature of the present invention is that the surface where the film formation preventing mask is in contact with the surface of the film formation target has a thickness of 1 nm to 100 nm.
Is formed of a polymer resin film set to have a surface roughness within the range. In the CVD apparatus configured as described above, wrinkles and meandering do not occur during traveling of the film formation prevention mask, and the film formation prevention mask can run stably.

[0021]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A first embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows a plasma CV according to a first embodiment of the present invention.
FIG. 2 is a schematic side view of the plasma CVD apparatus viewed from the direction of arrow B in FIG. 1. The plasma CVD apparatus according to the present embodiment forms a protective film on a tape-shaped magnetic recording medium such as a magnetic tape and a video tape.
For the protective film, the durability, running property,
A DLC (diamond-like carbon) thin film that ensures weather resistance and the like is used. Further, since the DLC thin film is required to be dense, a plasma CVD method is used for forming the DLC thin film.

As shown in FIGS. 1 and 2, the plasma CVD apparatus includes a plasma source 11, a cooling roll 12, a supply roll 10A, and a take-up roll 10 provided in a vacuum system.
B, take-up roll drive unit 10C, transport roll 13
A and 13B. Further, although not shown, a film forming gas supply system, a vacuum generator, and the like are connected to the plasma CVD apparatus.

The supply roll 10A has a base material 14 of a tape-shaped magnetic recording medium having a length of, for example, several thousand to several tens of thousands m.
Is wound. The base material 14 supplied from the supply roll 10A is wound on the take-up roll 10B through each of the transport roll 13A, the cooling roll 12, and the transport roll 13B. The winding of the substrate 14 is performed by a winding roll driving unit 10C connected to the winding roll 10B.

FIG. 3 is an enlarged sectional view of a film forming region of the plasma CVD apparatus. As shown in FIGS. 1 to 3, a DLC thin film 14A is formed on a substrate 14 in a film formation region between a plasma generation source 11 and a cooling roll 12 in a traveling path from a supply roll 10A to a take-up roll 10B. Filmed. In the present embodiment, the base material 14 is a polymer resin film, more specifically, a PET (polyethylene terephthalate) film as a base and a magnetic recording layer formed on the surface thereof.

The plasma generating source 11 generates plasma, promotes decomposition of a film forming gas, and enhances film forming performance. The cooling roll 12 transports the substrate 14 while placing it thereon, and also cools the substrate 14. Since the polymer resin film as the base material 14 has low heat resistance, the cooling roll 12
Is cooled.

In the plasma CVD apparatus configured as described above, a band-shaped film-forming prevention mask 15 for preventing film formation on an inappropriate film-forming portion, and the film-forming prevention mask 15 is continuously provided on the film forming region. And a mask traveling mechanism for traveling. In particular, as shown in FIG. 3, at least in the film formation region, the film formation prevention mask 15
The surface of the cooling roll 12 is covered up to a region where the substrate 14 at the end of the second is not placed. Since the film formation preventing mask 15 is continuously moved in the film formation region, the residence time in the film formation region is limited, and while traveling in the film formation region, there is adhesion of attached matter, but the amount of adhesion is small. is there.

The film formation preventing mask 15 is formed of a polymer resin film in the present embodiment. Specific examples of the polymer resin film include PET film, PEN (polyethylene naphthalate) film, polycarbonate film,
A polyamide film, a polyimide film and the like can be used practically.

Further, as the film formation preventing mask 15, a single-layer film of a metal film or a composite film in which a metal film and a polymer resin film are superposed can be used.
In the latter composite film, a polymer resin film is disposed on the cooling roll 12 side and the substrate 14 side. The single-layer film of the metallic film can be used as the film formation preventing mask 15 when the traveling speed is relatively slow and is equal to the traveling speed of the substrate 14. When the traveling speed is high or when a speed difference occurs between the traveling speed of the substrate 14 and the traveling speed, the substrate 14 may be damaged, cut during traveling, or the cooling roll 12 may be damaged. Therefore, in such a case, the metallic film is not suitable as the film formation preventing mask 15. In such a case, it is preferable to use a polymer resin film or a composite film in which a polymer resin film and a metal film are superposed.

It is to be noted that, compared to a single-layer film of a metallic film or a composite film of a metallic film and a polymer resin film, a composite film formed of a single layer of a polymer resin film or a composite layer of a polymer resin film is used. Film prevention mask 15
Can increase the deposition rate of the DLC thin film 14A on the base material 14. The present inventor has found that when a metallic film is used, plasma concentrates on the metallic film, the decomposition performance of the deposition gas on the metallic film is improved, and the deposition of the DLC thin film 14A on the metallic film is improved. Since the rate increases, the DLC thin film 1 on the base material 14 corresponds to the increase.
It is considered that the deposition rate of 4A is reduced.

The mask running mechanism includes a mask supply roll 16.
A, mask take-up roll 16B, mask take-up roll drive unit 16C, mask transport rolls 17A and 17B
Is provided. A belt-shaped film formation preventing mask 15 is wound around the mask supply roll 16A, and the mask supply roll 16A continuously supplies the film formation prevention mask 15 to the film formation region through the mask transport roll 17A. The film formation preventing mask 15 supplied to the film formation area is wound around a mask take-up roll 16B through a mask transport roll 17B. The winding control of the film formation preventing mask 15 by the mask winding roll 16B is performed by the mask winding roll drive unit 16C. That is, the mask traveling mechanism has a function of traveling the film-forming prevention mask 15 in response to the traveling of the base material 14 and continuously supplies the film-forming preventing mask 15 to the film-forming region.

In the plasma CVD apparatus according to the present embodiment, since the base material 14 runs in the center of the cooling roll 12, two film-forming preventing masks 15 that respectively cover both ends of the base material 14 run. .

Next, the aforementioned plasma according to the present embodiment is described.
A comparison between the CVD apparatus and the above-described conventional plasma CVD apparatus shown in FIGS. 7 to 9 will be compared. The plasma apparatus according to the present embodiment is set under the following film forming conditions.

(1) Diameter of cooling roll 12: 600 mm (2) Width of cooling roll 12: 300 mm (3) Width of substrate 14 of magnetic recording medium: 250 mm (4) Film forming width: 200 mm (5) Plasma Generation width: 300 mm (3) Plasma generation conditions: 13.56 MHz high frequency power supply (6) Raw material gas used for film formation: Any hydrocarbon-based gas can be used, but methane gas is used in the present embodiment. Is done.

The base material 14 of the magnetic recording medium has a thickness of 5 μm.
A film obtained by depositing cobalt with a thickness of 0.2 μm as a magnetic recording layer while introducing oxygen gas onto a PET film is used. The traveling speed (transport speed) of the magnetic recording medium substrate 14 is set to 50 m / min, and a 10 nm-thick DLC thin film 14A is formed on the magnetic recording medium substrate 14 (on the magnetic recording layer). The following film forming conditions were used.

The plasma CVD apparatus according to the prior art is set under the same film forming conditions.

Under such film forming conditions, the plasma CVD apparatus for running the belt-shaped film forming preventing mask 15 according to the present embodiment, and the fixed type film forming preventing mask 5 according to the prior art are used.
For each of the plasma CVD apparatuses having the above, the state of generation of deposits when the film was continuously formed for a long time was observed. As the film formation preventing mask 15 according to the present embodiment, a 10 μm-thick PET film having a surface roughness Ra set to 20 nm is used, and the running speed of the film formation preventing mask 15 is 10 m / m.
set to min.

The observation results are summarized as follows.

(1) In the plasma CVD apparatus according to the prior art, at the time when the film is formed in a length of about 2,000 m with the length of the substrate 4, the deposit (carbon film) adhering to the fixed type film formation preventing mask 5 is removed. Peeling was confirmed. Further, adhesion of carbon dust on the surface of the substrate 4 was confirmed.

(2) In the plasma CVD apparatus according to the present embodiment, no peeling of the deposit (carbon film) was confirmed at the time of forming the same film as described above. further,
No adhesion of carbon dust was observed on the surface of the substrate 14.

(3) In the plasma CVD apparatus according to the present embodiment, by running the film formation preventing mask 15, continuous film formation for a long time can be realized, and the quality of the magnetic recording medium is not impaired or unimpaired. Non-defective products were prevented and the yield was improved.

According to the present embodiment configured as described above,
In the CVD apparatus, since the belt-shaped film formation preventing mask 15 continuously passes through the film formation region by the mask traveling mechanism, the deposit adheres to the film formation prevention mask 15 running in the film formation region. The residence time of the film formation preventing mask 15 in a portion where the adhesion is severe in the film formation region is short, and the amount of the adhered substance is small. Accordingly, dust does not adhere to the base material 14 of the magnetic recording medium, so that the quality of the magnetic recording medium can be prevented from deteriorating, and the occurrence of defective magnetic recording media can be prevented.

Further, since the amount of deposits can be reduced, continuous film formation for a long time can be realized. Similarly, the amount of deposits can be reduced and the number of maintenance operations can be reduced, so that the operation rate can be improved and the productivity can be improved.

In the present embodiment, the traveling speed of the film formation preventing mask 15 includes the traveling speed of the base material 14 of the magnetic recording medium, the film formation amount of the DLC thin film 14A (the amount of deposits on the film formation prevention mask 15), It is determined by the allowable amount of the attached matter on the film formation preventing mask 15 and the like, and is not particularly limited.

(Second Embodiment) In this embodiment, a film formation preventing mask 15 used in the aforementioned plasma CVD apparatus is used.
It is an improvement of the running performance. FIG. 4 shows a second embodiment of the present invention.
FIG. 6 is a diagram showing a relationship between a material of a film formation preventing mask 15 according to the embodiment, a glass transition temperature Tg (° C.), and a traveling speed.

As shown in FIG. 4, the material selected for the film formation preventing mask is polyethylene (glass transition temperature Tg:-
55 ° C), polypropylene (Tg: -18 ° C), nylon (Tg: 50 ° C), PET (Tg: 69 ° C), PEN (Tg: 110)
C), polycarbonate (Tg: 150 ° C), and polyamide (Tg: 280 ° C). With respect to each of these seven types of materials, the running state of the film formation preventing mask 15 was observed under the same film formation conditions as in the above-described first embodiment. The thickness of the film formation preventing mask 15 is 10 μm, and the surface roughness is
Ra is set to 20 nm and the running speed is 10 to 5
It was changed stepwise in the range of 0 m / min.

As shown in FIG. 4, the film formation preventing mask 15
As for nylon, deformation or breakage such as wrinkles on the high-speed running side disappeared, and there were observed signs that the running state became better. Further, as the film formation preventing mask 15, a glass transition temperature T
For the material having a g of 60 ° C. or more, no deformation or breakage was observed, and it was confirmed that the material was in a good running state.

As described above, in the plasma CVD apparatus, by forming the film formation preventing mask 15 from a polymer resin film having a glass transition temperature of 60 ° C. or more, wrinkles and cuts occur during the running of the film formation preventing mask 15. Without this, the film formation preventing mask 15 can run stably.

(Third Embodiment) In this embodiment, a film formation preventing mask 15 used in the aforementioned plasma CVD apparatus is used.
It is an improvement of the running performance. FIG. 5 shows a third embodiment of the present invention.
FIG. 9 is a diagram showing a relationship between a material, a thickness (μm), and a running state of a film formation preventing mask 15 according to the embodiment.

As shown in FIG. 5, the materials selected for the film formation preventing mask are PET, PEN, and polyamide. For each of these three types of materials, the first
Using the same film forming conditions as those of the first embodiment, the running state with respect to the change in the thickness of the film formation preventing mask 15 was observed. The thickness of the film formation preventing mask 15 was changed in five steps within a range of about 0.5 μm to 125 μm. In any case, surface roughness Ra
Was set to 20 nm, and the running speed was set to 10 m / min.

As shown in FIG. 5, the film formation preventing mask 15
Regarding, a good running state without wrinkles or meandering was confirmed within a film thickness of 1 μm to 100 μm regardless of the material.

As described above, in the plasma CVD apparatus, the film formation preventing mask 15 is formed of a polymer resin film having a film thickness set within a range of 1 μm to 100 μm,
Wrinkles and meandering do not occur during running of the film formation preventing mask 15, and the film formation preventing mask 15 can run stably.

(Fourth Embodiment) In this embodiment, a film formation preventing mask 15 used in the aforementioned plasma CVD apparatus is used.
It is an improvement of the running performance. FIG. 6 shows a fourth embodiment of the present invention.
FIG. 9 is a diagram showing a relationship between a material of a film formation preventing mask 15 according to the embodiment, a surface roughness Ra (nm), and a running state.

As shown in FIG. 6, the material selected for the film formation preventing mask is PET. With respect to this PET, using the same film-forming conditions as in the first embodiment described above, the running state with respect to the change in the surface roughness of the surface of the film-preventing mask 15 which is in contact with the substrate 14 was observed. The surface roughness of the film formation preventing mask 15 was changed in six steps within a range of about 0.5 nm to 120 nm. In each case, the thickness of the PET was set to 10 μm, and the running speed was set to 10 m / min.

As shown in FIG. 6, the film formation preventing mask 15
It was confirmed that a good running state without wrinkles or meandering was observed within the range of the surface roughness of 1 nm to 100 nm.

As described above, in the plasma CVD apparatus, the film formation preventing mask 15 is formed of a polymer resin film having a surface roughness set in the range of 1 nm to 100 nm, so that wrinkles are generated during the movement of the film formation preventing mask 15. No meandering occurs, and the film formation preventing mask 15 can run stably.

The present invention is not limited to the above embodiment. For example, the present invention can be applied to a CVD apparatus other than a plasma CVD apparatus. Further, the present invention is not limited to a magnetic recording medium.
Applicable to D equipment.

[0057]

According to the present invention, the quality of a film-forming object can be improved,
Further, it is possible to provide a CVD apparatus capable of preventing occurrence of defective products on a film formation object. Further, the present invention can provide a CVD apparatus that can realize continuous film formation for a long time. Further, the present invention can provide a CVD apparatus capable of improving the operation rate and improving the productivity. Further, the present invention provides a CVD method capable of making the film thickness uniform.
Equipment can be provided.

[Brief description of the drawings]

FIG. 1 shows a plasma CVD according to a first embodiment of the present invention.
It is a schematic front view which shows the principal part of an apparatus.

FIG. 2 is a schematic side view of the plasma CVD apparatus viewed from the direction of arrow B in FIG.

FIG. 3 is an enlarged sectional view of a film forming region of the plasma CVD apparatus shown in FIG.

FIG. 4 is a diagram illustrating a relationship between a material of a film formation preventing mask, a glass transition temperature, and a traveling speed according to a second embodiment of the present invention.

FIG. 5 is a diagram showing a relationship between a material, a thickness, and a running state of a film formation preventing mask according to a third embodiment of the present invention.

FIG. 6 is a view showing a relationship between a material, a surface roughness, and a running state of a film formation preventing mask according to a fourth embodiment of the present invention.

FIG. 7 is a schematic front view showing a main part of a plasma CVD apparatus according to a conventional technique.

FIG. 8 is a schematic side view of the plasma CVD apparatus viewed from the direction of arrow A in FIG.

9 is an enlarged cross-sectional view of a film forming region of the plasma CVD apparatus shown in FIG.

[Explanation of symbols]

 Reference Signs List 10A supply roll 10B take-up roll 10C take-up roll drive unit 11 plasma generation source 12 cooling roll 13A, 13B transport roll 14 base material 14A DLC thin film 15 film formation prevention mask 16A mask supply roll 16B mask take-up roll 16C mask take-up roll Drive unit 17A, 17B Mask transport roll

Claims (3)

[Claims] 1. A band-shaped film formation preventing mask for preventing film formation on a film formation inappropriate portion in a processing chamber system, and a mask traveling mechanism for causing the film to run in the processing room system. A chemical vapor deposition apparatus characterized in that the mask is formed of a polymer resin film having a glass transition temperature of 60 ° C. or higher. 2. A strip-shaped film formation preventing mask for preventing film formation on an inappropriate film formation portion in a processing chamber system, and a mask traveling mechanism for moving the film formation preventing mask in the processing chamber system. The chemical vapor deposition apparatus according to claim 1, wherein the film formation preventing mask is formed of a polymer resin film having a thickness set in a range of 1 μm to 100 μm. 3. A strip-shaped film formation preventing mask for preventing film formation on an inappropriate film formation portion in a processing chamber system, and a mask traveling mechanism for moving the film formation preventing mask in the processing chamber system. The chemical vapor deposition apparatus according to claim 1, wherein the film formation preventing mask is formed of a polymer resin film having a surface in contact with the surface of the object to be formed with a surface roughness within a range of 1 nm to 100 nm.