JPH11265162A - 電気光学装置及び電子機器 - Google Patents
電気光学装置及び電子機器Info
- Publication number
- JPH11265162A JPH11265162A JP467999A JP467999A JPH11265162A JP H11265162 A JPH11265162 A JP H11265162A JP 467999 A JP467999 A JP 467999A JP 467999 A JP467999 A JP 467999A JP H11265162 A JPH11265162 A JP H11265162A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- signal
- precharge
- data line
- electro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 102
- 238000005070 sampling Methods 0.000 claims description 110
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 230000002457 bidirectional effect Effects 0.000 claims description 14
- 230000002441 reversible effect Effects 0.000 claims description 11
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 8
- 230000007547 defect Effects 0.000 abstract description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 145
- 239000010408 film Substances 0.000 description 80
- 239000010410 layer Substances 0.000 description 29
- 230000002093 peripheral effect Effects 0.000 description 24
- 238000000034 method Methods 0.000 description 23
- 238000010586 diagram Methods 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 15
- 108091006146 Channels Proteins 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 238000012546 transfer Methods 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000003566 sealing material Substances 0.000 description 9
- 230000005684 electric field Effects 0.000 description 7
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- 230000000295 complement effect Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
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- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 230000000644 propagated effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000000016 photochemical curing Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- -1 NSG Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- 101000994667 Homo sapiens Potassium voltage-gated channel subfamily KQT member 2 Proteins 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 1
- 102100034354 Potassium voltage-gated channel subfamily KQT member 2 Human genes 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP467999A JPH11265162A (ja) | 1998-01-09 | 1999-01-11 | 電気光学装置及び電子機器 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10-15150 | 1998-01-09 | ||
| JP1515098 | 1998-01-09 | ||
| JP467999A JPH11265162A (ja) | 1998-01-09 | 1999-01-11 | 電気光学装置及び電子機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003209653A Division JP4406231B2 (ja) | 1998-01-09 | 2003-08-29 | 電気光学装置及び電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11265162A true JPH11265162A (ja) | 1999-09-28 |
| JPH11265162A5 JPH11265162A5 (enExample) | 2004-09-09 |
Family
ID=26338491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP467999A Pending JPH11265162A (ja) | 1998-01-09 | 1999-01-11 | 電気光学装置及び電子機器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11265162A (enExample) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002011888A (ja) * | 2000-06-30 | 2002-01-15 | Canon Inc | インクジェット記録ヘッド用基体の製造方法、インクジェット記録ヘッドの製造方法、インクジェット記録ヘッド、およびインクジェット記録装置 |
| WO2003023752A1 (en) * | 2001-09-07 | 2003-03-20 | Matsushita Electric Industrial Co., Ltd. | El display, el display driving circuit and image display |
| JP2007086736A (ja) * | 2005-08-24 | 2007-04-05 | Seiko Epson Corp | 電気光学装置、及びこれを備えた電子機器 |
| US7224333B2 (en) | 2002-01-18 | 2007-05-29 | Semiconductor Energy Laboratory Co. Ltd. | Display device and driving method thereof |
| JP2009020528A (ja) * | 2008-08-27 | 2009-01-29 | Seiko Epson Corp | 電気光学装置及び電子機器 |
| US7561147B2 (en) | 2003-05-07 | 2009-07-14 | Toshiba Matsushita Display Technology Co., Ltd. | Current output type of semiconductor circuit, source driver for display drive, display device, and current output method |
| US7817149B2 (en) | 2002-04-26 | 2010-10-19 | Toshiba Matsushita Display Technology Co., Ltd. | Semiconductor circuits for driving current-driven display and display |
| JP2014056254A (ja) * | 2013-10-22 | 2014-03-27 | Japan Display Inc | 表示装置 |
| US8823606B2 (en) | 2001-09-07 | 2014-09-02 | Panasonic Corporation | EL display panel, its driving method, and EL display apparatus |
| JP2015187735A (ja) * | 2015-05-08 | 2015-10-29 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP2017010066A (ja) * | 2016-10-17 | 2017-01-12 | セイコーエプソン株式会社 | 液晶装置、及び電子機器 |
| US9933677B2 (en) | 2012-01-12 | 2018-04-03 | Seiko Epson Corporation | Liquid crystal device and electronic apparatus |
| US11302253B2 (en) | 2001-09-07 | 2022-04-12 | Joled Inc. | El display apparatus |
-
1999
- 1999-01-11 JP JP467999A patent/JPH11265162A/ja active Pending
Cited By (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002011888A (ja) * | 2000-06-30 | 2002-01-15 | Canon Inc | インクジェット記録ヘッド用基体の製造方法、インクジェット記録ヘッドの製造方法、インクジェット記録ヘッド、およびインクジェット記録装置 |
| US10198993B2 (en) | 2001-09-07 | 2019-02-05 | Joled Inc. | EL display apparatus |
| US9892683B2 (en) | 2001-09-07 | 2018-02-13 | Joled Inc. | EL display apparatus |
| US11302253B2 (en) | 2001-09-07 | 2022-04-12 | Joled Inc. | El display apparatus |
| KR100805522B1 (ko) * | 2001-09-07 | 2008-02-20 | 마츠시타 덴끼 산교 가부시키가이샤 | Ｅｌ 표시 장치, 전자 표시 기기 및 ｅｌ 표시 장치의 구동회로 |
| US10923030B2 (en) | 2001-09-07 | 2021-02-16 | Joled Inc. | EL display apparatus |
| EP1434193A4 (en) * | 2001-09-07 | 2009-03-25 | Panasonic Corp | EL DISPLAY, EL DISPLAY CONTROL UNIT AND PICTURE DISPLAY |
| US7528812B2 (en) | 2001-09-07 | 2009-05-05 | Panasonic Corporation | EL display apparatus, driving circuit of EL display apparatus, and image display apparatus |
| US10818235B2 (en) | 2001-09-07 | 2020-10-27 | Joled Inc. | EL display apparatus |
| KR100912320B1 (ko) * | 2001-09-07 | 2009-08-14 | 파나소닉 주식회사 | Ｅｌ 표시 장치 |
| CN100589162C (zh) | 2001-09-07 | 2010-02-10 | 松下电器产业株式会社 | El显示装置和el显示装置的驱动电路以及图像显示装置 |
| US10699639B2 (en) | 2001-09-07 | 2020-06-30 | Joled Inc. | EL display apparatus |
| US10553158B2 (en) | 2001-09-07 | 2020-02-04 | Joled Inc. | EL display apparatus |
| US8823606B2 (en) | 2001-09-07 | 2014-09-02 | Panasonic Corporation | EL display panel, its driving method, and EL display apparatus |
| US10453395B2 (en) | 2001-09-07 | 2019-10-22 | Joled Inc. | EL display apparatus |
| US10347183B2 (en) | 2001-09-07 | 2019-07-09 | Joled Inc. | EL display apparatus |
| WO2003023752A1 (en) * | 2001-09-07 | 2003-03-20 | Matsushita Electric Industrial Co., Ltd. | El display, el display driving circuit and image display |
| US10198992B2 (en) | 2001-09-07 | 2019-02-05 | Joled Inc. | EL display apparatus |
| US9922597B2 (en) | 2001-09-07 | 2018-03-20 | Joled Inc. | EL display apparatus |
| US9728130B2 (en) | 2001-09-07 | 2017-08-08 | Joled Inc. | EL display apparatus |
| US9959809B2 (en) | 2001-09-07 | 2018-05-01 | Joled Inc. | EL display apparatus |
| US9997108B1 (en) | 2001-09-07 | 2018-06-12 | Joled Inc. | EL display apparatus |
| US10134336B2 (en) | 2001-09-07 | 2018-11-20 | Joled Inc. | EL display apparatus |
| US7224333B2 (en) | 2002-01-18 | 2007-05-29 | Semiconductor Energy Laboratory Co. Ltd. | Display device and driving method thereof |
| US7817149B2 (en) | 2002-04-26 | 2010-10-19 | Toshiba Matsushita Display Technology Co., Ltd. | Semiconductor circuits for driving current-driven display and display |
| US7561147B2 (en) | 2003-05-07 | 2009-07-14 | Toshiba Matsushita Display Technology Co., Ltd. | Current output type of semiconductor circuit, source driver for display drive, display device, and current output method |
| JP2007086736A (ja) * | 2005-08-24 | 2007-04-05 | Seiko Epson Corp | 電気光学装置、及びこれを備えた電子機器 |
| JP2009020528A (ja) * | 2008-08-27 | 2009-01-29 | Seiko Epson Corp | 電気光学装置及び電子機器 |
| US9933677B2 (en) | 2012-01-12 | 2018-04-03 | Seiko Epson Corporation | Liquid crystal device and electronic apparatus |
| JP2014056254A (ja) * | 2013-10-22 | 2014-03-27 | Japan Display Inc | 表示装置 |
| JP2015187735A (ja) * | 2015-05-08 | 2015-10-29 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP2017010066A (ja) * | 2016-10-17 | 2017-01-12 | セイコーエプソン株式会社 | 液晶装置、及び電子機器 |
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