JPH11260865A - Tape with adhesive for tab and substrate for connecting semiconductor integrated circuit and semiconductor device - Google Patents

Tape with adhesive for tab and substrate for connecting semiconductor integrated circuit and semiconductor device

Info

Publication number
JPH11260865A
JPH11260865A JP10059877A JP5987798A JPH11260865A JP H11260865 A JPH11260865 A JP H11260865A JP 10059877 A JP10059877 A JP 10059877A JP 5987798 A JP5987798 A JP 5987798A JP H11260865 A JPH11260865 A JP H11260865A
Authority
JP
Japan
Prior art keywords
adhesive
tape
semiconductor device
tab
adhesive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10059877A
Other languages
Japanese (ja)
Other versions
JP3951418B2 (en
Inventor
Yukitsuna Konishi
幸綱 小西
Mikihiro Ogura
幹弘 小倉
Shoji Kigoshi
将次 木越
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Industries Inc
Original Assignee
Toray Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Priority to JP05987798A priority Critical patent/JP3951418B2/en
Publication of JPH11260865A publication Critical patent/JPH11260865A/en
Application granted granted Critical
Publication of JP3951418B2 publication Critical patent/JP3951418B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a tape with adhesive for a semiconductor device having superior high adhesiveness and high insulation, and a substrate for connecting a semiconductor using the tape, and a semiconductor device. SOLUTION: This tape with an adhesive for tape automated bonding(TAB) is composed of a laminated product having an adhesive layer and a protective film layer on an organic insulating film having flexibility, and this adhesive layer contains polyamide resin and a phenol derivative constituted of two nuclides, which is shown by at least one kind of formula as indispensable components. In this case, X indicates a group or a bording containing at least one of sulfur and oxygen atoms, and Y1 and Y2 indicate a hydrocarbon radical whose carbon number is 1-5, and those X and Y can be made either the same or different. Also, (m) indicates an integer which is 0<=m<=3, and (n) indicates an integer which is 0<=n<=1.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は半導体集積回路の実
装方法であるテープオートメーテッドボンディング(T
AB)方式に用いられる接着剤付きテープ(以下、TA
B用テープと称する)およびそれを用いた半導体集積回
路接続用基板ならびに半導体装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a tape automated bonding (T)
AB) Tape with adhesive (hereinafter referred to as TA)
B) and a substrate for connecting a semiconductor integrated circuit and a semiconductor device using the same.

【0002】[0002]

【従来の技術】通常のTAB用テープは、ポリイミドフ
ィルム等の可撓性を有する有機絶縁性フィルム上に、接
着剤層および保護フィルム層として離型性を有するポリ
エステルフィルム等を積層した3層構造より構成されて
いる。
2. Description of the Related Art An ordinary TAB tape has a three-layer structure in which a flexible organic insulating film such as a polyimide film is laminated with a releasing polyester film or the like as an adhesive layer and a protective film layer. It is composed of

【0003】TAB用テープは、(1)スプロケットお
よびデバイス孔の穿孔、(2)銅箔との熱ラミネート、
(3)パターン形成(レジスト塗布、エッチング、レジ
スト除去)、(4)スズまたは金−メッキ処理などの加
工工程を経てTABテープ(パターンテープ)に加工さ
れる。図1にパターンテープの形状を示す。。有機絶縁
性フィルム1上に接着剤2、導体パターン5があり、フ
ィルムを送るためのスプロケット孔3、デバイスを設置
するデバイス孔4がある。図2に本発明の半導体装置の
一態様の断面図を示す。パターンテープのインナーリー
ド部6を、保護膜11を有する半導体集積回路8の金バ
ンプ10に熱圧着(インナーリードボンディング)し、
半導体集積回路を搭載する。次いで、封止樹脂9による
樹脂封止工程を経て半導体装置が作成される。またイン
ナーリード部を有さず、パターンテープの導体と半導体
集積回路の金バンプとの間をワイヤーボンディングで接
続する方式も採用されている。このような半導体装置を
テープキャリアパッケージ(TCP)型半導体装置と称
する。最後に、TCP型半導体装置は、他の部品を搭載
した回路基板等とアウターリード7を介して接続(アウ
ターリードボンディング)され、電子機器への実装がな
される。
[0003] TAB tapes include (1) perforation of sprocket and device holes, (2) thermal lamination with copper foil,
It is processed into a TAB tape (pattern tape) through processing steps such as (3) pattern formation (resist coating, etching, resist removal) and (4) tin or gold-plating. FIG. 1 shows the shape of the pattern tape. . An adhesive 2 and a conductor pattern 5 are provided on the organic insulating film 1, a sprocket hole 3 for feeding the film, and a device hole 4 for installing a device. FIG. 2 is a cross-sectional view of one embodiment of the semiconductor device of the present invention. The inner lead portion 6 of the pattern tape is thermocompression-bonded (inner lead bonding) to the gold bump 10 of the semiconductor integrated circuit 8 having the protective film 11,
A semiconductor integrated circuit is mounted. Next, a semiconductor device is manufactured through a resin sealing step using a sealing resin 9. In addition, there is also adopted a method in which a conductor of a pattern tape and a gold bump of a semiconductor integrated circuit are connected by wire bonding without having an inner lead portion. Such a semiconductor device is called a tape carrier package (TCP) type semiconductor device. Finally, the TCP type semiconductor device is connected to a circuit board or the like on which other components are mounted via outer leads 7 (outer lead bonding), and is mounted on an electronic device.

【0004】一方、近年の電子機器の小型・軽量化に伴
い、半導体パッケージも高密度実装化を目的に、従来の
接続端子(アウターリード)をパッケージ側面に配列し
ていたQFP(クワッド・フラット・パッケージ)、S
OP(スモール・アウトライン・パッケージ)の代わ
り、パッケージの裏面に接続端子を配列するBGA(ボ
ール・グリッド・アレイ)、CSP(チップ・スケール
・パッケージ)、が一部用いられるようになってきた。
BGA、CSPがQFP、SOPと構造的に最も大きく
異なる点は、前者は、インターポーザーと称される基板
を必要とするのに対し、後者は金属製のリードフレーム
を用いることにより必ずしも基板を必要としない点にあ
る。ここでいうインターポーザーは、ガラスエポキシ基
板やポリイミド等の有機絶縁性フィルムに銅箔を張り合
わせたものが一般的に用いられる。したがって、これら
BGA、CSPなどの半導体装置にも本発明のTAB用
接着剤付きテープを使用することができ、得られたBG
A、CSPも本発明の半導体装置に含まれる。図3およ
び4に本発明の半導体装置(BGA,CSP)の一態様
の断面図を示す。図中、12、20は有機絶縁性フィル
ム、13、21は接着剤、14、22は導体パターン、
15、23は半導体集積回路、16、24は封止樹脂、
17、25は金バンプ、18、26はハンダボール、1
9はスティフナー、27はソルダーレジストを示す。
On the other hand, as electronic devices have become smaller and lighter in recent years, a semiconductor package has a QFP (quad flat flat) in which conventional connection terminals (outer leads) are arranged on the side of the package for the purpose of high-density mounting. Package), S
Instead of an OP (Small Outline Package), a BGA (Ball Grid Array) in which connection terminals are arranged on the back surface of the package and a CSP (Chip Scale Package) have been used in part.
The BGA and CSP are structurally most different from QFP and SOP in that the former requires a substrate called an interposer, while the latter requires a metal lead frame to use a substrate. And not. As the interposer referred to here, one obtained by bonding a copper foil to an organic insulating film such as a glass epoxy substrate or polyimide is generally used. Therefore, the tape with an adhesive for TAB of the present invention can also be used for semiconductor devices such as BGA and CSP.
A and CSP are also included in the semiconductor device of the present invention. 3 and 4 are cross-sectional views of one embodiment of the semiconductor device (BGA, CSP) of the present invention. In the figure, 12 and 20 are organic insulating films, 13 and 21 are adhesives, 14 and 22 are conductor patterns,
15 and 23 are semiconductor integrated circuits, 16 and 24 are sealing resins,
17 and 25 are gold bumps, 18 and 26 are solder balls, 1
9 indicates a stiffener, and 27 indicates a solder resist.

【0005】上記のパッケージ形態ではいずれも最終的
にTAB用テープの接着剤層は、パッケージ内に残留す
るため、絶縁性、耐熱性、接着性が要求される。近年電
子機器の小型化、高密度化が進行するに伴い、TAB方
式における導体幅が非常に狭くなってきており、高い接
着強度および絶縁性を有する接着剤の必要性が高まって
いる。
[0005] In any of the above package forms, the adhesive layer of the TAB tape ultimately remains in the package, so that it is required to have insulation, heat resistance and adhesion. In recent years, as electronic devices have been miniaturized and densified, the conductor width in the TAB method has become extremely narrow, and the need for an adhesive having high adhesive strength and insulating properties has increased.

【0006】このような観点から、従来のTAB用テー
プの接着剤層にはエポキシ樹脂および/またはフェノー
ル樹脂とポリアミド樹脂の混合組成物が主として用いら
れてきた。(特開平2−143447号公報、特開平3
−217035号公報等)。
From such a viewpoint, a mixed composition of an epoxy resin and / or a phenol resin and a polyamide resin has been mainly used for the adhesive layer of the conventional TAB tape. (Japanese Unexamined Patent Publication (Kokai) No. 2-143447,
No. -217035).

【0007】[0007]

【発明が解決しようとする課題】しかし、上述の特性の
うち接着性と絶縁性とのバランスをとることは困難であ
り、従来のTAB用テープは、接着性と絶縁性のいずれ
かを向上させると、他方が低下し、総合的に必ずしも十
分な特性とはいえない。接着性について言えば、導体幅
が細くなるに従い、接着強度が低下し、ボンディング等
の後工程で導体の剥離を生じ、集積回路、回路基板と接
続できないことがある。これは接着強度の絶対値の不足
と、導体と接着剤の間へのメッキ液の侵入による実効の
接着面積の減少が主な原因である。
However, it is difficult to balance the adhesiveness and the insulating property among the above-mentioned properties, and the conventional TAB tape improves either the adhesiveness or the insulating property. On the other hand, the other decreases, and it cannot be said that the overall characteristics are necessarily sufficient. As for the adhesiveness, as the conductor width becomes narrower, the adhesive strength is reduced, and the conductor may be peeled off in a post-process such as bonding, so that it may not be possible to connect to an integrated circuit or a circuit board. This is mainly due to a shortage of the absolute value of the adhesive strength and a decrease in the effective adhesive area due to the penetration of the plating solution between the conductor and the adhesive.

【0008】一般的には接着剤の弾性率を低下させるこ
とにより、破壊エネルギーを増加させて、接着力を向上
させることが可能であるが、このような方法では高温、
高湿下で接着剤が軟化し、絶縁性が低下するという問題
が生ずる。一方、絶縁性を向上させるため、接着剤の架
橋度を増加させると、接着剤が脆性破壊しやすくなると
ともに、硬化収縮による内部応力の増加を招き、接着力
が低下する。
[0008] In general, it is possible to increase the breaking energy by lowering the elastic modulus of the adhesive, thereby improving the adhesive force.
There is a problem that the adhesive is softened under high humidity and the insulation property is reduced. On the other hand, when the degree of crosslinking of the adhesive is increased in order to improve the insulating property, the adhesive is liable to be brittlely fractured, and the internal stress is increased due to curing shrinkage, and the adhesive strength is reduced.

【0009】本発明はこのような問題点を解決し、接着
性に優れた新規なTAB用テープおよびそれを用いた半
導体装置を提供することを目的とする。
An object of the present invention is to solve such problems and to provide a novel TAB tape having excellent adhesiveness and a semiconductor device using the same.

【0010】[0010]

【課題を解決するための手段】本発明者らは、上記の目
的を達成するためにTAB用テープの接着剤成分の化学
構造と金属に対する接着性との関係を鋭意検討した結
果、フェノール誘導体とポリアミド樹脂とを巧みに組み
合わせることにより、接着性および絶縁性に優れたTA
B用テープが得られることを見い出し、本発明に至った
ものである。
Means for Solving the Problems In order to achieve the above object, the present inventors have conducted intensive studies on the relationship between the chemical structure of the adhesive component of the TAB tape and the adhesiveness to metal, and as a result, have found that TA with excellent adhesion and insulation properties by skillfully combining with polyamide resin
It has been found that a tape for B can be obtained, which has led to the present invention.

【0011】すなわち、本発明は可撓性を有する有機絶
縁性フィルム上に、接着剤層および保護フィルム層を有
する積層体より構成され、該接着剤層が、ポリアミド樹
脂および少なくとも1種以上の一般式(1)で示される
置換基を有するフェノール誘導体を必須成分として含む
ことを特徴とするTAB用接着剤付きテープおよびそれ
を用いた半導体装置である。
That is, the present invention comprises a laminate having an adhesive layer and a protective film layer on a flexible organic insulating film, wherein the adhesive layer comprises a polyamide resin and at least one kind of general resin. A TAB adhesive tape comprising a phenol derivative having a substituent represented by the formula (1) as an essential component, and a semiconductor device using the same.

【0012】[0012]

【化2】 一般式(1) (Xは硫黄、酸素原子の少なくとも1つを含む基あるい
は結合を示す。Y1、Y2は炭素数1〜5までの炭化水
素基を示し、Y1およびY2は同じでも異なっていても
よい。またmは0≦m≦3、nは0≦n≦1である整数
を示す。)
Embedded image General formula (1) (X represents a group or a bond containing at least one of sulfur and oxygen atoms. Y1 and Y2 each represent a hydrocarbon group having 1 to 5 carbon atoms, and Y1 and Y2 may be the same or different. Represents an integer satisfying 0 ≦ m ≦ 3, and n represents an integer satisfying 0 ≦ n ≦ 1.)

【0013】[0013]

【発明の実施の形態】以下、本発明について詳細に説明
する。本発明で使用されるフェノール誘導体は、一般式
(1)のように2核体から成るもので、単核体同士を結
合するための介在する分子の有無は特に限定されない。
介在する分子がない構造はビフェニル型であるが、介在
する分子が有る場合は、その介在する分子の構造がエー
テル構造、二酸化イオウ構造、メチレン構造、イソプロ
ピル構造等である。具体的にはビフェノール、ビスヒド
ロキシフェニールエーテル、4,4´−サルフィニルジ
レゾルシノール、ビス(3,5−ジメチル−4−ヒドロ
キシフェニル)スルホンおよび2,2´−メチレンビス
(4−メチル−6−t−ブチルフェノール)等である。
BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail. The phenol derivative used in the present invention comprises a binuclear compound as shown in the general formula (1), and the presence or absence of an intervening molecule for bonding mononuclear members is not particularly limited.
The structure having no intervening molecule is a biphenyl type, but when there is an intervening molecule, the structure of the intervening molecule is an ether structure, a sulfur dioxide structure, a methylene structure, an isopropyl structure, or the like. Specifically, biphenol, bishydroxyphenyl ether, 4,4'-sulfinyl diresorcinol, bis (3,5-dimethyl-4-hydroxyphenyl) sulfone and 2,2'-methylenebis (4-methyl-6-t -Butylphenol) and the like.

【0014】また一般式(1)のY1、Y2は炭素数1
から5までの炭化水素基であれば特に限定されず、Y
1、Y2は同一であっても異なっていてもよい。具体的
には、たとえばY1およびY2はメチル基である化合物
としてはビス(3,5−ジメチル−4−ヒドロキシフェ
ニル)スルホンがあり、Y1がメチル基、Y2がt−ブ
チルフェノール基であれば2,2´−メチレンビス(4
−メチル−6−t−ブチルフェノール)があげられるが
これに限らない。
In the general formula (1), Y1 and Y2 each have 1 carbon atom.
Is not particularly limited as long as it is a hydrocarbon group from to 5,
1, Y2 may be the same or different. Specifically, for example, compounds in which Y1 and Y2 are methyl groups include bis (3,5-dimethyl-4-hydroxyphenyl) sulfone, and when Y1 is a methyl group and Y2 is a t-butylphenol group, 2, 2'-methylenebis (4
-Methyl-6-t-butylphenol), but is not limited thereto.

【0015】一般に、フェノール樹脂はポリアミドと相
溶性が良好であり、かつ熱硬化により、ポリアミドに適
度な耐熱性と破壊強度を付与するために好適なブレンド
材料である。このような耐熱性と破壊強度が、最終的に
絶縁性と接着性のバランスに重要となる。しかし、従来
のフェノール樹脂の場合、メチレン結合でフェノール核
同士を結合しているので、ポリアミドとのブレンド後に
適度な架橋密度を得ることが必ずしも容易ではない。そ
の結果、絶縁性と接着性のバランスを実現しにくい。
In general, a phenolic resin is a blend material having good compatibility with polyamide and suitable for imparting appropriate heat resistance and breaking strength to polyamide by thermosetting. Such heat resistance and breaking strength are ultimately important for the balance between insulation and adhesion. However, in the case of the conventional phenol resin, since the phenol nuclei are bonded to each other by a methylene bond, it is not always easy to obtain an appropriate crosslinking density after blending with the polyamide. As a result, it is difficult to achieve a balance between insulation and adhesiveness.

【0016】一方、本発明で使用される2核体から成る
フェノール誘導体は、適度な架橋密度を得ることができ
る上、2核体間に介在する分子は剛直な構造ではなく、
フェノール樹脂のメチレン結合に比べて可撓性に富んで
いるために、絶縁性を損なわずに接着性が向上したと考
えられる。
On the other hand, the binuclear phenol derivative used in the present invention can obtain an appropriate crosslinking density, and the molecules interposed between the binuclear bodies are not rigid structures.
It is considered that the adhesiveness was improved without impairing the insulating property because the resin was more flexible than the methylene bond of the phenol resin.

【0017】本発明で使用されるポリアミド樹脂は、公
知の種々のものが使用できる。特に、接着剤層に可撓性
を持たせ、かつ低吸水率のため絶縁性にすぐれる、炭素
数が36であるジカルボン酸(いわゆるダイマー酸)を
必須成分として含むものが好適である。ダイマー酸を含
むポリアミド樹脂は、常法によるダイマー酸とジアミン
の重縮合により得られるが、この際にダイマー酸以外の
アジピン酸、アゼライン酸、セバシン酸等のジカルボン
酸を共重合成分として含有してもよい。ジアミンはエチ
レンジアミン、ヘキサメチレンジアミン、ピペラジン、
等の公知のものが使用でき、吸湿性、溶解性の点から2
種以上の混合でもよい。
As the polyamide resin used in the present invention, various known resins can be used. In particular, a material containing a dicarboxylic acid having 36 carbon atoms (so-called dimer acid) as an essential component, which has flexibility in the adhesive layer and has excellent insulating properties due to a low water absorption, is preferable. Polyamide resin containing dimer acid is obtained by polycondensation of dimer acid and diamine according to a conventional method.In this case, adipic acid other than dimer acid, azelaic acid, dicarboxylic acid such as sebacic acid is contained as a copolymer component. Is also good. Diamines are ethylenediamine, hexamethylenediamine, piperazine,
And so on. From the viewpoint of hygroscopicity and solubility, 2
A mixture of more than one species may be used.

【0018】上記のフェノール誘導体とポリアミド樹脂
との配合割合は、通常ポリアミド樹脂100重量部に対
してフェノール誘導体5〜80重量部、好ましくは20
〜40重量部である。フェノール誘導体が5重量部未満
では特に接着性の向上効果が十分でない。また、80重
量部を越えると絶縁性が低下するので好ましくない。
The mixing ratio of the phenol derivative to the polyamide resin is usually 5 to 80 parts by weight, preferably 20 to 100 parts by weight of the polyamide resin.
4040 parts by weight. If the amount of the phenol derivative is less than 5 parts by weight, the effect of improving the adhesiveness is not sufficient. On the other hand, if it exceeds 80 parts by weight, the insulating property is undesirably reduced.

【0019】本発明において、接着剤層に公知のエポキ
シ樹脂を添加することにより、一層接着性および絶縁性
を向上させることができる。エポキシ樹脂は1分子内に
2個以上のエポキシ基を有するものであれば特に制限さ
れないが、ビスフェノールF、ビスフェノールA、ビス
フェノールS、ジヒドロキシナフタレン等のジグリシジ
ルエーテル、エポキシ化フェノールノボラック、エポキ
シ化クレゾールノボラック、エポキシ化トリスフェニロ
ールメタン、エポキシ化テトラフェニロールエタン、エ
ポキシ化メタキシレンジアミン、等が挙げられる。エポ
キシ樹脂の添加量はポリアミド樹脂100重量部に対し
て5〜100重量部、好ましくは20〜70重量部であ
る。
In the present invention, by adding a known epoxy resin to the adhesive layer, the adhesiveness and insulation can be further improved. The epoxy resin is not particularly limited as long as it has two or more epoxy groups in one molecule, but diglycidyl ethers such as bisphenol F, bisphenol A, bisphenol S, dihydroxynaphthalene, epoxidized phenol novolak, and epoxidized cresol novolak. Epoxidized trisphenylolmethane, epoxidized tetraphenylolethane, epoxidized metaxylenediamine, and the like. The amount of the epoxy resin to be added is 5 to 100 parts by weight, preferably 20 to 70 parts by weight, based on 100 parts by weight of the polyamide resin.

【0020】さらに、接着剤層にノボラック型フェノー
ル樹脂、レゾール型フェノール樹脂等の公知のフェノー
ル樹脂を含有してもよく、絶縁性および熱変形等の耐熱
性の向上に効果がある。フェノール樹脂の添加量はポリ
アミド樹脂100重量部に対して5〜100重量部、好
ましくは20〜70重量部である。
Further, the adhesive layer may contain a known phenol resin such as a novolak type phenol resin or a resol type phenol resin, which is effective in improving insulation and heat resistance such as thermal deformation. The addition amount of the phenol resin is 5 to 100 parts by weight, preferably 20 to 70 parts by weight based on 100 parts by weight of the polyamide resin.

【0021】本発明の接着剤層にエポキシ樹脂の硬化剤
および硬化促進剤を添加することは何等制限されない。
たとえば、芳香族ポリアミン、三フッ化ホウ素トリエチ
ルアミン錯体等の三フッ化ホウ素のアミン錯体、2−ア
ルキル−4−メチルイミダゾール、2−フェニル−4−
アルキルイミダゾール等のイミダゾール誘導体、無水フ
タル酸、無水トリメリット酸等の有機酸、ジシアンジア
ミド、トリフェニルフォスフィン等公知のものが使用で
きる。添加量はポリアミド樹脂100重量部に対して
0.1〜10重量部であると好ましい。
The addition of the epoxy resin curing agent and the curing accelerator to the adhesive layer of the present invention is not limited at all.
For example, aromatic polyamines, boron trifluoride amine complexes such as boron trifluoride triethylamine complex, 2-alkyl-4-methylimidazole, 2-phenyl-4-amine
Known compounds such as imidazole derivatives such as alkylimidazole, organic acids such as phthalic anhydride and trimellitic anhydride, dicyandiamide and triphenylphosphine can be used. The addition amount is preferably 0.1 to 10 parts by weight based on 100 parts by weight of the polyamide resin.

【0022】以上の成分以外に、接着剤の特性を損なわ
ない範囲で酸化防止剤、イオン捕捉剤などの有機、無機
成分を添加することは何ら制限されるものではない。
In addition to the above components, addition of organic or inorganic components such as an antioxidant and an ion scavenger as long as the properties of the adhesive are not impaired is not limited at all.

【0023】本発明でいう可撓性を有する絶縁性フィル
ムとはポリイミド、ポリエステル、ポリフェニレンスル
フィド、ポリエーテルスルホン、ポリエーテルエーテル
ケトン、アラミド、ポリカーボネート、ポリアリレー
ト、等のプラスチックあるいはエポキシ樹脂含浸ガラス
クロス等の複合材料からなる厚さ25〜125μmのフ
ィルムであり、これらから選ばれる複数のフィルムを積
層して用いても良い。また必要に応じて、加水分解、コ
ロナ放電、低温プラズマ、物理的粗面化、易接着コーテ
ィング処理等の表面処理を施すことができる。
The flexible insulating film referred to in the present invention is a plastic such as polyimide, polyester, polyphenylene sulfide, polyether sulfone, polyether ether ketone, aramid, polycarbonate, polyarylate, or glass cloth impregnated with epoxy resin. Of the composite material having a thickness of 25 to 125 μm, and a plurality of films selected from these may be laminated and used. If necessary, a surface treatment such as hydrolysis, corona discharge, low-temperature plasma, physical surface roughening, and easy adhesion coating treatment can be performed.

【0024】本発明でいう保護フィルム層とは、銅箔を
熱ラミネートする前に接着剤面からTAB用テープの形
態を損なうことなく剥離できれば特に限定されないが、
たとえばシリコーンあるいはフッ素化合物のコーティン
グ処理を施したポリエステルフィルム、ポリオレフィン
フィルム、およびこれらをラミネートした紙が挙げられ
る。
The protective film layer referred to in the present invention is not particularly limited as long as it can be peeled from the adhesive surface without damaging the form of the TAB tape before heat laminating the copper foil.
For example, a polyester film or a polyolefin film coated with a silicone or fluorine compound, and a paper obtained by laminating the same.

【0025】次にTAB用接着剤付きテープの製造方法
について説明する。
Next, a method of manufacturing a tape with an adhesive for TAB will be described.

【0026】可撓性を有する絶縁性フィルムに、上記接
着剤組成物を溶剤に溶解した塗料を塗布、乾燥する。接
着剤層の膜厚は10〜25μmとなるように塗布するこ
とが好ましい。乾燥条件は、100〜200℃、1〜5
分である。溶剤は特に限定されないが、トルエン、キシ
レン、クロルベンゼン等の芳香族系とメタノール、エタ
ノール、プロパノール等のアルコール系の混合が好適で
ある。このようにして得られたフィルムに保護フィルム
をラミネートし、最後に35〜158mm程度の幅にス
リットする。
A coating material obtained by dissolving the above adhesive composition in a solvent is applied to a flexible insulating film and dried. It is preferable to apply the adhesive layer so that the film thickness is 10 to 25 μm. Drying conditions are 100-200 ° C, 1-5
Minutes. The solvent is not particularly limited, but a mixture of an aromatic compound such as toluene, xylene, and chlorobenzene and an alcohol compound such as methanol, ethanol, and propanol is preferable. A protective film is laminated on the film thus obtained, and finally slit into a width of about 35 to 158 mm.

【0027】このようにして得られた半導体装置用接着
剤付きテープを用いて、半導体接続用基板が製造でき
る。さらにこれらの半導体接続用基板を用いて半導体装
置が製造できる。
The substrate for semiconductor connection can be manufactured by using the tape with the adhesive for semiconductor device thus obtained. Furthermore, a semiconductor device can be manufactured using these semiconductor connection substrates.

【0028】[0028]

【実施例】以下に実施例を挙げて本発明を説明するが、
本発明はこれらの実施例に限定されるものではない。実
施例の説明に入る前に評価方法について述べる。
EXAMPLES The present invention will be described below with reference to examples.
The present invention is not limited to these examples. Before starting the description of the embodiments, an evaluation method will be described.

【0029】評価方法 (1)評価用サンプル作成方法 TAB用接着剤付きテープサンプルに18μmの電解銅
箔を、140℃、0.1MPaの条件でラミネートし
た。続いてエアオーブン中で、80℃、3時間、100
℃、5時間、150℃、5時間の順次加熱処理を行な
い、銅箔付きTAB用テープを作成した。得られた銅箔
付きTAB用テープの銅箔面に常法によりフォトレジス
ト膜形成、エッチング、レジスト剥離を行ない、接着強
度および絶縁性の評価用サンプルをそれぞれ作成した。
Evaluation method (1) Method of preparing sample for evaluation An electrolytic copper foil of 18 µm was laminated on a tape sample with an adhesive for TAB at 140 ° C and 0.1 MPa. Then, in an air oven at 80 ° C for 3 hours, 100
C., 5 hours, 150.degree. C., 5 hours in order to prepare a TAB tape with copper foil. Photoresist film formation, etching, and resist peeling were performed on the copper foil surface of the obtained TAB tape with copper foil by a conventional method, and samples for evaluation of adhesive strength and insulating property were prepared.

【0030】(2)スズメッキ処理 上記(1)の方法で得られたサンプルを、ホウフッ酸系
の無電解スズメッキ液に70℃、5分浸漬処理し、0.
5μm厚のメッキを施した。
(2) Tin plating treatment The sample obtained by the above method (1) was immersed in a borofluoric acid-based electroless tin plating solution at 70 ° C for 5 minutes.
5 μm thick plating was applied.

【0031】(3)剥離強度 上記(1)および(2)の方法で得た導体幅50μmの
評価用サンプルを用いて、導体を90°方向に50mm
/minの速度で剥離し、その際の剥離力を測定した。
(3) Peeling Strength Using the evaluation sample having a conductor width of 50 μm obtained by the methods (1) and (2) above, the conductor was moved 50 mm in the 90 ° direction.
/ Min, and the peeling force at that time was measured.

【0032】(4)絶縁信頼性 上記(1)および(2)の方法で得た導体幅200μ
m、導体間距離50μmのくし型形状の評価用サンプル
を用いて、不飽和プレッシャークッカー中で130℃、
85%RH、100Vの電圧を連続的に印加した状態に
おいて、抵抗値が初期値の1/10以下となる時間を測
定した。
(4) Insulation Reliability A conductor width of 200 μm obtained by the above methods (1) and (2).
m, 130 ° C. in an unsaturated pressure cooker using a sample for evaluation of a comb shape having a distance between conductors of 50 μm.
In a state in which a voltage of 85% RH and 100 V were continuously applied, the time when the resistance value was 1/10 or less of the initial value was measured.

【0033】(5)接着性保持率の算出 メッキによるTAB用テープの接着力変化を次のような
式で算出した。
(5) Calculation of Adhesive Retention Rate The change in adhesive strength of the TAB tape due to plating was calculated by the following equation.

【0034】接着性保持率=(メッキ後の接着性/メッ
キ前の接着性)×100。
Adhesion retention = (Adhesion after plating / Adhesion before plating) × 100.

【0035】参考例1(ポリアミド樹脂の合成) 酸としてダイマー酸PRIPOL1009(ユニケマ社
製)およびアジピン酸を用い、酸/アミン比をほぼ等量
で添加し、酸/アミン反応物、消泡剤および1%以下の
リン酸触媒を加え、反応体を調製した。この反応体を、
140℃,1時間撹拌加熱後、205℃まで昇温し、約
1.5時間撹拌した。約2kPaの真空下で、0.5時
間保持し、温度を低下させた。最後に、酸化防止剤を添
加し、重量平均分子量20000、酸価10のポリアミ
ド樹脂を取り出した。
Reference Example 1 (Synthesis of Polyamide Resin) Dimer acid PRIPOL1009 (manufactured by Unichema) and adipic acid were used as the acid, and the acid / amine ratio was added in almost equal amounts. 1% or less of a phosphoric acid catalyst was added to prepare a reactant. This reactant is
After stirring and heating at 140 ° C. for 1 hour, the temperature was raised to 205 ° C., and the mixture was stirred for about 1.5 hours. It was kept under vacuum of about 2 kPa for 0.5 hour to lower the temperature. Finally, an antioxidant was added, and a polyamide resin having a weight average molecular weight of 20,000 and an acid value of 10 was taken out.

【0036】実施例1 (a)半導体用接着剤付きテープの作成 参考例1で得たポリアミド樹脂、エポキシ樹脂(油化シ
ェルエポキシ(株)製、“エピコート”828、エポキ
シ当量186)、フェノール樹脂(CKM1282(昭
和高分子(株))および表1に示したフェノール誘導体
をそれぞれ表3の組成比となるように配合し、さらに固
形分に対し0.5重量%のジシアンジアミドを硬化促進
剤として添加し、濃度20重量%となるようにメタノー
ル/モノクロルベンゼン混合溶媒に30℃で撹拌、混合
して接着剤溶液を作成した。この接着剤をバーコータ
で、厚さ25μmのポリエチレンテレフタレートフィル
ム(東レ(株)製”ルミラー”)に約18μmの乾燥厚
さとなるように塗布し,100℃、1分および160℃
で5分間の乾燥を行ない、接着剤シートを作成した。さ
らに、得られた接着剤シートを厚さ75μmのポリイミ
ドフィルム(宇部興産(株)製“ユーピレックス”75
S)に120℃、0.1MPaの条件でラミネートして
TAB用接着剤付きテープを作成した。特性を表2に示
す。
Example 1 (a) Preparation of Tape with Adhesive for Semiconductor Polyamide resin obtained in Reference Example 1, epoxy resin ("Epicoat" 828, epoxy equivalent 186, manufactured by Yuka Shell Epoxy Co., Ltd.), phenol resin (CKM1282 (Showa Kogaku Co., Ltd.) and the phenol derivatives shown in Table 1 were blended so as to have the composition ratios shown in Table 3, and 0.5% by weight of dicyandiamide based on the solid content was added as a curing accelerator Then, the mixture was stirred and mixed with a methanol / monochlorobenzene mixed solvent at 30 ° C. so as to have a concentration of 20% by weight to prepare an adhesive solution. ), Applied to a dry thickness of about 18 μm, at 100 ° C. for 1 minute and 160 ° C.
For 5 minutes to produce an adhesive sheet. Further, the obtained adhesive sheet was coated on a 75 μm-thick polyimide film (“UPILEX” 75 manufactured by Ube Industries, Ltd.).
S) was laminated under the conditions of 120 ° C. and 0.1 MPa to prepare a tape with an adhesive for TAB. Table 2 shows the characteristics.

【0037】(b)半導体接続用基板の作成 上記の手順で得られたTAB用接着剤付きテープを用い
て、前述の評価方法(1)および(2)と同一の方法で
半導体集積回路接続用の導体回路を形成し、図1に示す
パターンテープを得た。
(B) Preparation of Substrate for Connecting Semiconductor Using the adhesive tape for TAB obtained by the above procedure, the same method as in the above evaluation methods (1) and (2) was used to connect the semiconductor integrated circuit. Was formed, and the pattern tape shown in FIG. 1 was obtained.

【0038】(c)半導体装置の作成 上記(2)のパターンテープを用いて、450℃,1分
の条件でインナーリードボンディングを行ない、半導体
集積回路を接続した。しかるのちに、エポキシ系液状封
止剤(ナミックス(株)製“チップコート”1320−
617)で樹脂封止を行ない、半導体装置を得た。図2
は得られた半導体装置の断面を示したものである。
(C) Preparation of Semiconductor Device Using the pattern tape of (2), inner lead bonding was performed at 450 ° C. for 1 minute to connect a semiconductor integrated circuit. Thereafter, an epoxy-based liquid sealant (“Chipcoat” 1320- manufactured by Namics Corporation)
In 617), resin sealing was performed to obtain a semiconductor device. FIG.
Shows a cross section of the obtained semiconductor device.

【0039】実施例2〜4および比較例1 実施例1と同様の方法で、それぞれ表1〜2に示した原
料および組成比で調合した接着剤を用いてTAB用接着
剤付きテープを得た。特性を表2に示す。
Examples 2 to 4 and Comparative Example 1 In the same manner as in Example 1, a tape with an adhesive for TAB was obtained using the raw materials and the adhesives prepared at the composition ratios shown in Tables 1 and 2, respectively. . Table 2 shows the characteristics.

【0040】[0040]

【表1】 [Table 1]

【0041】[0041]

【表2】 [Table 2]

【0042】表2の実施例および比較例から本発明によ
り得られるTAB用接着剤付きテープは、良好な絶縁信
頼性を維持しつつ、さらに接着性の向上に大きく寄与し
ていることがわかる。
From the examples and comparative examples in Table 2, it can be seen that the TAB adhesive tape obtained by the present invention greatly contributes to the improvement of the adhesiveness while maintaining good insulation reliability.

【0043】[0043]

【発明の効果】本発明は接着性に優れた新規なTAB用
接着剤付きテープおよびそれを用いた半導体装置を工業
的に提供するものであり、本発明のTAB用接着剤付き
テープによって高密度実装用の半導体装置の信頼性およ
び経済性を向上させることができる。
Industrial Applicability The present invention is to provide a novel TAB adhesive tape excellent in adhesiveness and a semiconductor device using the same industrially. The reliability and economy of the semiconductor device for mounting can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のTAB用接着剤付きテープを加工して
得られた、半導体集積回路搭載前のパターンテープの一
態様の斜視図。
FIG. 1 is a perspective view of one embodiment of a pattern tape before mounting a semiconductor integrated circuit, obtained by processing a tape with an adhesive for TAB of the present invention.

【図2】本発明のTAB用接着剤付きテープを用いた半
導体装置の一態様の断面図。
FIG. 2 is a cross-sectional view of one embodiment of a semiconductor device using the tape with an adhesive for TAB of the present invention.

【図3】本発明の半導体装置用接着剤付きテープを用い
た半導体装置(BGA)の一態様の断面図半導体装置の
一態様の断面図。
FIG. 3 is a cross-sectional view of one embodiment of a semiconductor device (BGA) using a tape with an adhesive for a semiconductor device of the present invention;

【図4】本発明の半導体装置用接着剤付きテープを用い
た半導体装置(CSP)の一態様の断面図半導体装置の
一態様の断面図。
FIG. 4 is a cross-sectional view of one embodiment of a semiconductor device (CSP) using a tape with an adhesive for a semiconductor device of the present invention;

【符号の説明】[Explanation of symbols]

1、12、20 可撓性を有する絶縁性フィルム 2、13、21 接着剤 3 スプロケット孔 4 デバイス孔 5、14、22 半導体集積回路接続用の導体 6 インナーリード部 7 アウターリード部 8、15、23 半導体集積回路 9、16、24 封止樹脂 10、17、25 金バンプ 11 保護膜 18、26 ハンダボール 19 補強板 27 ソルダーレジスト 1, 12, 20 Flexible insulating film 2, 13, 21 Adhesive 3 Sprocket hole 4 Device hole 5, 14, 22 Conductor for connecting a semiconductor integrated circuit 6 Inner lead portion 7 Outer lead portion 8, 15, Reference Signs List 23 semiconductor integrated circuit 9, 16, 24 sealing resin 10, 17, 25 gold bump 11 protective film 18, 26 solder ball 19 reinforcing plate 27 solder resist

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】可撓性を有する有機絶縁性フィルム上に、
接着剤層および保護フィルム層を有する積層体より構成
され、該接着剤層がポリアミド樹脂、および少なくとも
1種以上の一般式(1)で示される2核体から成るフェ
ノール誘導体を必須成分として含むことを特徴とするT
AB用接着剤付きテープ。 【化1】 (Xは硫黄、酸素原子の少なくとも1つを含む基あるい
は結合を示す。Y1、Y2は炭素数1〜5までの炭化水
素基を示し、Y1およびY2は同じでも異なっていても
よい。またmは0≦m≦3、nは0≦n≦1である整数
を示す。)
1. An organic insulating film having flexibility,
It is composed of a laminate having an adhesive layer and a protective film layer, and the adhesive layer contains, as essential components, a polyamide resin and at least one or more phenol derivatives comprising a binuclear body represented by the general formula (1). T characterized by
Tape with adhesive for AB. Embedded image (X represents a group or a bond containing at least one of sulfur and oxygen atoms. Y1 and Y2 each represent a hydrocarbon group having 1 to 5 carbon atoms, and Y1 and Y2 may be the same or different. Represents an integer satisfying 0 ≦ m ≦ 3, and n represents an integer satisfying 0 ≦ n ≦ 1.)
【請求項2】接着剤層がエポキシ樹脂を含有することを
特徴とする請求項1記載のTAB用接着剤付きテープ。
2. The tape with an adhesive for TAB according to claim 1, wherein the adhesive layer contains an epoxy resin.
【請求項3】ポリアミド樹脂が炭素数36のジカルボン
酸を必須成分として含むことを特徴とする請求項1記載
のTAB用接着剤付きテープ。
3. The tape with an adhesive for TAB according to claim 1, wherein the polyamide resin contains a dicarboxylic acid having 36 carbon atoms as an essential component.
【請求項4】接着剤層が少なくとも1種類以上のフェノ
ール樹脂を含有することを特徴とする請求項1記載のT
AB用接着剤付きテープ。
4. The T according to claim 1, wherein the adhesive layer contains at least one phenolic resin.
Tape with adhesive for AB.
【請求項5】請求項1〜4のいずれか記載のTAB用接
着剤付きテープを用いた半導体集積回路接続用基板
5. A substrate for connecting a semiconductor integrated circuit using the tape with an adhesive for TAB according to claim 1.
【請求項6】請求項5記載の半導体集積回路接続用基板
を用いた半導体装置。
6. A semiconductor device using the substrate for connecting a semiconductor integrated circuit according to claim 5.
JP05987798A 1998-03-11 1998-03-11 Tape with adhesive for TAB, substrate for connecting semiconductor integrated circuit, and semiconductor device Expired - Fee Related JP3951418B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP05987798A JP3951418B2 (en) 1998-03-11 1998-03-11 Tape with adhesive for TAB, substrate for connecting semiconductor integrated circuit, and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05987798A JP3951418B2 (en) 1998-03-11 1998-03-11 Tape with adhesive for TAB, substrate for connecting semiconductor integrated circuit, and semiconductor device

Publications (2)

Publication Number Publication Date
JPH11260865A true JPH11260865A (en) 1999-09-24
JP3951418B2 JP3951418B2 (en) 2007-08-01

Family

ID=13125831

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100860098B1 (en) 2008-02-29 2008-09-26 주식회사 이녹스 Adhesive film for semiconductor package
US7491789B2 (en) 2002-05-13 2009-02-17 Hitachi Chemical Company, Ltd Disulfide-containing phenolic resin as curing agent for epoxy resin
US9568405B2 (en) 2013-11-29 2017-02-14 International Business Machines Corporation Method, apparatus, and structure for determining interposer thickness
CN113801605A (en) * 2021-11-10 2021-12-17 宁波申山新材料科技有限公司 Low-surface-energy pressure-sensitive adhesive tape and processing method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7491789B2 (en) 2002-05-13 2009-02-17 Hitachi Chemical Company, Ltd Disulfide-containing phenolic resin as curing agent for epoxy resin
US7504471B2 (en) 2002-05-13 2009-03-17 Hitachi Chemical Co., Ltd. Sulfur-containing phenolic resin, process for preparing the same, phenol derivatives having thioether structure or disulfide structure, process for preparing the same and epoxy resin composition and adhesive
KR100860098B1 (en) 2008-02-29 2008-09-26 주식회사 이녹스 Adhesive film for semiconductor package
US9568405B2 (en) 2013-11-29 2017-02-14 International Business Machines Corporation Method, apparatus, and structure for determining interposer thickness
CN113801605A (en) * 2021-11-10 2021-12-17 宁波申山新材料科技有限公司 Low-surface-energy pressure-sensitive adhesive tape and processing method thereof

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