JPH11256317A - Electronic beam deflector - Google Patents
Electronic beam deflectorInfo
- Publication number
- JPH11256317A JPH11256317A JP5925598A JP5925598A JPH11256317A JP H11256317 A JPH11256317 A JP H11256317A JP 5925598 A JP5925598 A JP 5925598A JP 5925598 A JP5925598 A JP 5925598A JP H11256317 A JPH11256317 A JP H11256317A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- crucible
- deflection coil
- magnetic field
- electron gun
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、るつぼ内のターゲ
ット材に電子銃からの電子ビームを当てる際に、そのタ
ーゲット材に電子ビームが着点するようにその電子ビー
ムの軌道を偏向する電子ビーム偏向装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam for deflecting the trajectory of an electron beam so that the electron beam strikes the target material when the electron beam from an electron gun is applied to the target material in a crucible. The present invention relates to a deflection device.
【０００２】[0002]
【従来の技術】図９に単一偏向コイル型電子ビーム偏向
装置の概念図を示す。るつぼ６の長軸方向と直角方向か
らるつぼ６に入射される電子銃１からの電子ビーム２
を、ポールピース５付きの単一偏向コイル１４が生成す
る長軸方向の偏向磁場により下向きに偏向し、るつぼ６
内のターゲット材７を加熱蒸発している。2. Description of the Related Art FIG. 9 shows a conceptual diagram of a single deflection coil type electron beam deflector. Electron beam 2 from electron gun 1 incident on crucible 6 at right angles to the long axis direction of crucible 6
Is deflected downward by a long-axis direction deflection magnetic field generated by a single deflection coil 14 with a pole piece 5, and the crucible 6
The target material 7 inside is heated and evaporated.
【０００３】図１１に他の例の電子ビーム偏向装置の概
念図を示す(特開平62−13568 号)。電子銃１からの電子
ビーム２は、走査偏向角に応じて、るつぼ６の長軸方向
に対して斜めに且つ同一角度となるように、電子ビーム
２の通過開口部に複数の励磁コイル１６を設け、磁場強
度を変えている。FIG. 11 is a conceptual diagram of another example of an electron beam deflector (Japanese Patent Laid-Open No. 62-13568). A plurality of exciting coils 16 are passed through the opening of the electron beam 2 so that the electron beam 2 from the electron gun 1 is oblique to the longitudinal direction of the crucible 6 and at the same angle in accordance with the scanning deflection angle. To change the magnetic field strength.
【０００４】開口部を通過した斜め入射の電子ビーム２
は、主磁場励磁コイル１７による短軸方向磁場１８によ
り下方向に偏向され、るつぼ６内ターゲット７を加熱蒸
発させる。An obliquely incident electron beam 2 passing through an opening
Is deflected downward by the short-axis direction magnetic field 18 generated by the main magnetic field excitation coil 17 to heat and evaporate the target 7 in the crucible 6.
【０００５】[0005]
【発明が解決しようとする課題】電子ビームがるつぼ内
ターゲット材を照射する際、４０〜５０％の電子が反射
し、被蒸着材への反射電子照射が問題となる。When an electron beam irradiates a target material in a crucible, 40 to 50% of the electrons are reflected, and the irradiation of the material to be deposited with reflected electrons becomes a problem.
【０００６】図９の単一偏向コイル型電子ビーム偏向装
置では、図１０に示すように、被蒸着材１０への反射電
子９の照射現象が起こるので、その減少を回避すべく偏
向コイル１４の電流を大にし、磁場強度を強くする必要
がある。In the single-deflection coil type electron beam deflector shown in FIG. 9, as shown in FIG. 10, a phenomenon of irradiating the material to be deposited 10 with the reflected electrons 9 occurs. It is necessary to increase the current and increase the magnetic field strength.
【０００７】しかし、大出力電子銃になるにしたがい電
子銃１の構造寸法が大きくなり、るつぼ６と配置上干渉
してしまい、電子銃１が設置できなくなる問題がある。However, as the size of the electron gun 1 increases, the structural size of the electron gun 1 increases, and the electron gun 1 interferes with the crucible 6 in arrangement, so that the electron gun 1 cannot be installed.
【０００８】また、電子ビーム２の長軸方向走査におい
て、るつぼ６内のターゲット材７に着点する電子ビーム
２は、短軸方向に彎曲したビーム軌道形状になり、電子
銃１内の短軸方向調整電磁レンズにて直進ビーム形状と
すべく電子銃１からの電子ビーム２の出射仰角を調整し
ている。In the scanning of the electron beam 2 in the major axis direction, the electron beam 2 landing on the target material 7 in the crucible 6 has a beam trajectory curved in the minor axis direction, and The exit elevation angle of the electron beam 2 from the electron gun 1 is adjusted by a direction adjusting electromagnetic lens to obtain a straight beam shape.
【０００９】短軸方向彎曲は制御上小さい方が望ましい
が、磁場強度を強くした場合着点電子ビーム２の短軸方
向彎曲は大きくなり、短軸方向彎曲修正のための電磁レ
ンズによる調整量が増加するという問題がある。Although it is desirable that the short-axis direction curvature is small in terms of control, if the magnetic field strength is increased, the short-axis direction curvature of the electron beam 2 to be spotted becomes large, and the amount of adjustment by the electromagnetic lens for correcting the short-axis direction curvature is reduced. There is a problem of increasing.
【００１０】また、短軸方向彎曲修正後の電子ビーム２
のターゲット材７への着点位置での電子ビーム２の入射
角を変えずに空間軌道を目的の軌道に合わせるべく修正
する場合、単一偏向コイル１４のアンペアターン調整あ
るいは電子ビーム２の出射仰角調整で行っている。Further, the electron beam 2 after the correction of the short-axis direction curvature is provided.
If the spatial trajectory is corrected to match the desired trajectory without changing the angle of incidence of the electron beam 2 at the point of application to the target material 7, the adjustment of the ampere turn of the single deflection coil 14 or the elevation angle of emission of the electron beam 2 We are making adjustments.
【００１１】単一偏向コイル１４のアンペアターン調整
では磁場強度が変わるため、電子ビーム２の出射位置を
変える、すなわち電子銃１の位置を変えねばならず、目
的の空間軌道を得ることができない。The adjustment of the ampere-turn of the single deflecting coil 14 changes the magnetic field strength. Therefore, the emission position of the electron beam 2 must be changed, that is, the position of the electron gun 1 must be changed, and a desired spatial orbit cannot be obtained.
【００１２】電子ビーム２の出射仰角調整の場合、電子
ビーム２の着点入射角が変わってしまうという問題があ
る。In the case of adjusting the exit elevation angle of the electron beam 2, there is a problem that the incident angle of the electron beam 2 at the landing point changes.
【００１３】図１１の特開昭62−13568 号公報の電子ビ
ーム偏向装置では、主磁場励磁コイル１７による短軸方
向磁場１８の強度を強くでき、反射電子の影響軽減には
効果がある。In the electron beam deflecting device disclosed in Japanese Patent Application Laid-Open No. 62-13568 in FIG. 11, the strength of the short-axis direction magnetic field 18 by the main magnetic field exciting coil 17 can be increased, which is effective in reducing the influence of reflected electrons.
【００１４】しかし、励磁コイル１６の開口部と同一高
さにある電子銃がるつぼ上の蒸発蒸気を直接覗くことに
なり蒸気が電子銃内に入り込むことにより、加速電圧が
付加されているカソード〜アノード間での放電を誘発し
易い、及び蒸気により電子銃内が汚れやすくなるという
問題がある。However, the electron gun, which is at the same height as the opening of the exciting coil 16, directly looks at the evaporated vapor on the crucible, and the vapor enters the electron gun. There is a problem that a discharge is easily induced between the anodes and that the inside of the electron gun is easily contaminated by steam.
【００１５】本発明の目的は、上記した反射電子の影響
を、電子銃とるつぼが干渉しない配置で軽減することに
ある。An object of the present invention is to reduce the influence of the above-mentioned reflected electrons by an arrangement in which the electron gun and the crucible do not interfere with each other.
【００１６】[0016]
【課題を解決するための手段】上記目的を達成するため
の第１手段は、ターゲット材を収容するるつぼと、電子
ビームを上向き迎角を付けて出射する電子銃と、前記電
子銃から出射された前記電子ビームを前記るつぼ内に向
けて偏向させる偏向磁場を発生する主偏向コイルと、平
面で見ると前記るつぼを挟む配置にて前記主偏向コイル
の両端側に装備されたポールピースとを備えた電子ビー
ム偏向装置において、平面で見ると、前記るつぼを挟ん
で前記主偏向コイルの反対側の前記電子銃と前記るつぼ
との間に、前記偏向磁場に比べて強度が低くて逆向きの
磁場を発生する補償偏向コイルを備えたことを特徴とし
た電子ビーム偏向装置であり、このような手段によれ
ば、主偏向コイルによる磁場強度を高めて反射電子の被
蒸着材への照射を低減しても、補償偏向コイルからの磁
場が主偏向コイルからの磁場影響を弱めて電子銃から補
償偏向コイル上方間の電子ビームの軌道を直線方向に修
正し、補償偏向コイル上方からるつぼ上方間での電子ビ
ームの軌道を主偏向コイルからの強い磁場によって急激
にるつぼ方向に偏向する作用が得られ、電子銃は電子ビ
ームの軌道が一部直線方向に修正されることに基づいて
るつぼから離れた方向に上向き迎角を付けた状態でずら
すことができ、るつぼ内を電子銃が覗む状態を避け、且
つ、るつぼと電子銃との配置上の干渉が避けられ、反射
電子による影響が少ない状態にて電子銃によるるつぼ内
ターゲット材への照射装置が構成できる。A first means for achieving the above object is a crucible for accommodating a target material, an electron gun for emitting an electron beam at an upward angle of attack, and an electron gun for emitting the electron beam from the electron gun. A main deflection coil for generating a deflection magnetic field for deflecting the electron beam toward the inside of the crucible, and pole pieces provided at both ends of the main deflection coil in an arrangement sandwiching the crucible when viewed in a plane. In the electron beam deflecting device, when viewed in a plane, a magnetic field having an intensity lower than that of the deflecting magnetic field and opposite to that between the electron gun and the crucible on the opposite side of the main deflection coil with the crucible therebetween. An electron beam deflecting device comprising a compensating deflecting coil for generating reflected light. According to such a means, the intensity of the magnetic field by the main deflecting coil is increased to reduce the irradiation of the material to be deposited with reflected electrons. Even so, the magnetic field from the compensating deflection coil weakens the influence of the magnetic field from the main deflection coil and corrects the trajectory of the electron beam between the electron gun and the upper part of the compensating deflection coil in a linear direction. A strong magnetic field from the main deflection coil deflects the electron beam trajectory rapidly in the crucible direction, and the electron gun moves away from the crucible based on the fact that the electron beam trajectory is partially corrected in a linear direction Can be shifted in the direction with an angle of attack upward, avoiding the state in which the electron gun looks into the crucible, avoiding interference in the arrangement between the crucible and the electron gun, and reducing the effect of reflected electrons Thus, a device for irradiating the target material in the crucible with the electron gun can be configured.
【００１７】同じく第２手段は、第１手段において、ポ
ールピースをその長手方向へ移動自在に装備してあるこ
とを特徴とした電子ビーム偏向装置であり、このような
手段によれば、第１手段による作用に加えて、ポールピ
ースをその長手方向に移動させることにより、るつぼの
長手方向両端側の磁場強度を変化させて、図７に示すよ
うに、電子ビームの着点位置をるつぼの長手方向と水平
直角方向へ変位させる作用が得られ、電子ビームをるつ
ぼの長手方向へ振るような走査を行った際のその走査方
向への直進性をポールピースの移動によって補償するこ
とができる。The second means is an electron beam deflecting device characterized in that, in the first means, the pole piece is provided so as to be movable in the longitudinal direction thereof. In addition to the action of the means, by moving the pole piece in the longitudinal direction, the magnetic field strength at both ends in the longitudinal direction of the crucible is changed, and as shown in FIG. The effect of displacing the electron beam in the direction perpendicular to the horizontal direction can be obtained, and the linearity in the scanning direction when scanning in which the electron beam is swung in the longitudinal direction of the crucible can be compensated for by the movement of the pole piece.
【００１８】同じく第３手段は、第１手段又は第２手段
において、ポールピースを主偏向コイルから離れるにし
たがって互いに接近する方向に配置されていることを特
徴とした電子ビーム偏向装置であり、第１手段又は第２
手段による作用に加えて、ポールピースが主偏向コイル
から離れるに従って互いに接近するから、ポールピース
近傍の磁場ベクトルの傾斜が小さくなりるつぼ内のター
ゲット材に対する電子ビームの着点がるつぼの長手方向
に大きくずれたり入射角が浅くなったりすることを抑制
できる。The third means is an electron beam deflecting device according to the first means or the second means, wherein the pole pieces are arranged in a direction approaching each other as the pole pieces move away from the main deflection coil. 1 means or 2nd
In addition to the action by the means, since the pole pieces move closer to each other as they move away from the main deflection coil, the gradient of the magnetic field vector near the pole pieces becomes smaller, and the point of attachment of the electron beam to the target material in the crucible becomes larger in the longitudinal direction of the crucible. It is possible to suppress a shift or a shallow incidence angle.
【００１９】同じく第４手段は、第１手段又は第２手段
又は第３手段において、各偏向コイルに各偏向コイルの
アンペアターン及びアンペアターン比を調整する制御装
置を備えたことを特徴とした電子ビーム偏向装置であ
り、第１手段又は第２手段又は第３手段による作用に加
えて、制御装置により各偏向コイルのアンペアターン及
びアンペアターン比を変えることにより、電子ビームに
対する各偏向コイルによる磁場の影響度合いを調整して
その電子ビームの軌道を所望の軌道に調整する作用が得
られる。A fourth means is the electronic device according to the first means, the second means or the third means, wherein each deflection coil is provided with a control device for adjusting the ampere-turn and the ampere-turn ratio of each deflection coil. A beam deflecting device, in addition to the operation of the first means, the second means, or the third means, changing the ampere-turn and the ampere-turn ratio of each deflecting coil by the control device, thereby changing the magnetic field of each deflecting coil with respect to the electron beam. The effect of adjusting the degree of influence and adjusting the trajectory of the electron beam to a desired trajectory can be obtained.
【００２０】[0020]
【発明の実施の形態】本発明の実施例の概要は、以下の
通りである。DESCRIPTION OF THE PREFERRED EMBODIMENTS The outline of an embodiment of the present invention is as follows.
【００２１】主たる強磁場を生成する主偏向コイル３
と、主偏向コイル３と逆方向の主偏向コイル３による磁
場より弱い弱磁場を生成する補償偏向コイル４とを、る
つぼ６を挟んで配置した構成を備える。Main deflection coil 3 for generating a main strong magnetic field
And a compensating deflection coil 4 for generating a weak magnetic field weaker than the magnetic field generated by the main deflection coil 3 in the opposite direction to the main deflection coil 3.
【００２２】電子銃１側に設置される補償偏向コイル４
のアンペアターン（電流×コイル巻数）は、主偏向コイ
ルのアンペアターンより小さくすることにより、るつぼ
６上付近の強磁場は主として主偏向コイル３で確保さ
れ、補償偏向コイル４と電子銃間の空間において主偏向
コイル３による電子銃側への磁場が補償偏向コイル４の
磁場で補償されることにより、電子銃１より出射される
電子ビーム２は補償偏向コイル４近くまで補償された低
磁場で概略直線状の軌道を描き、るつぼ６上付近で急激
にるつぼ６側に偏向される軌道を作ることが可能にな
る。これにより、電子銃１とるつぼ６が干渉しない配置
が達成でき及びるつぼ６上付近の強磁場により反射電子
の軌道径も小さくできるため被蒸着材への反射電子照射
を防止できる。また、補償偏向コイル４を主偏向コイル
３より下側に配置することにより、電子銃１からの電子
ビーム２を斜め上側に出射することが可能であり、蒸気
封入器１１の電子ビーム開口部からの漏洩蒸気が直接電
子銃１を覗かないようにすることが達成できる。The compensating deflection coil 4 installed on the electron gun 1 side
Is smaller than the ampere-turn of the main deflection coil, the strong magnetic field near the crucible 6 is mainly secured by the main deflection coil 3 and the space between the compensating deflection coil 4 and the electron gun. Since the magnetic field of the main deflection coil 3 toward the electron gun is compensated by the magnetic field of the compensating deflection coil 4, the electron beam 2 emitted from the electron gun 1 is approximately a low magnetic field compensated up to the vicinity of the compensating deflection coil 4. It is possible to draw a straight trajectory and to make a trajectory that is rapidly deflected to the crucible 6 side near the crucible 6. Thereby, the arrangement in which the electron gun 1 and the crucible 6 do not interfere with each other can be achieved, and the diameter of the orbit of the reflected electrons can be reduced by the strong magnetic field near the upper part of the crucible 6, so that irradiation of the material to be deposited with the reflected electrons can be prevented. Further, by arranging the compensating deflection coil 4 below the main deflection coil 3, the electron beam 2 from the electron gun 1 can be emitted obliquely upward, and can be emitted from the electron beam opening of the vapor enclosure 11. To prevent the leaked steam from directly looking into the electron gun 1.
【００２３】本発明の各実施例をより具体的に説明する
と以下の通りである。Each embodiment of the present invention will be described more specifically as follows.
【００２４】図１に示した第１実施例を以下に説明す
る。The first embodiment shown in FIG. 1 will be described below.
【００２５】図１において、主偏向コイル３の両端に直
線状のポールピース５を主偏向コイル３に直角に取り付
け、るつぼ６を挟んで補償偏向コイル４を主偏向コイル
３の反対側即ち電子銃側に配置するものである。In FIG. 1, linear pole pieces 5 are attached to both ends of the main deflection coil 3 at a right angle to the main deflection coil 3, and the compensating deflection coil 4 is placed across the crucible 6 on the opposite side of the main deflection coil 3, ie, the electron gun. It is arranged on the side.
【００２６】本実施例では補償偏向コイル４を主偏向コ
イル３より下げて配置してある。In this embodiment, the compensating deflection coil 4 is arranged lower than the main deflection coil 3.
【００２７】図５に磁場補償の原理概念を示す。FIG. 5 shows the principle concept of magnetic field compensation.
【００２８】各偏向コイルの磁場強度は、以下で表され
る。The magnetic field strength of each deflection coil is expressed as follows.
【００２９】Ｇ（ｒ）＝Ｇ0e -αr Ｇ（ｒ）：短軸方向ｒにおける磁場強度、 Ｇ0 ：基準位置の磁場強度、 α ：係数 図５は、補償偏向コイルの短軸方向中心で主偏向コイル
の磁場強度と補償コイルの磁場強度を一致させた場合の
例を示しており、総合磁場強度ＧS は以下となる。G (r) = G 0e -αr G (r): magnetic field strength in the short axis direction r, G 0 : magnetic field strength at the reference position, α: coefficient FIG. 5 shows the center of the compensation deflection coil in the short axis direction. shows an example in which to match the field strength of the magnetic field strength and the compensation coil of the main deflection coils, the overall field strength G S is as follows.
【００３０】 ＧS（ｒ）＝ＧM0e -α(700+r)−ＧC0e -α|r| ＧMO：主偏向コイル中心での磁場強度、 ＧC0：補償偏向コイル中心での磁場強度、 ｒ ：補償偏向コイル中心を０とする短軸方向距離 ｒ＝０から＋側の領域ａでは主偏向コイル３の磁場は補
償偏向コイル４の磁場により補償されることになり、ｒ
＝０から−側の領域ｂでは主として主偏向コイル３によ
る磁場が形成されることになり、総合磁場強度ＧS は図
５の□印で示す匂配となる。G S (r) = G M0e −α (700 + r) −G C0e −α | r | G MO : magnetic field strength at the center of the main deflection coil, G C0 : magnetic field strength at the center of the compensation deflection coil, r: distance in the short axis direction with the center of the compensating deflection coil as 0. In the region a on the positive side from r = 0, the magnetic field of the main deflection coil 3 is compensated by the magnetic field of the compensating deflection coil 4.
In the region b on the negative side from = 0, a magnetic field is mainly formed by the main deflection coil 3, and the total magnetic field strength G S has a odor indicated by a square in FIG.
【００３１】本磁場形成により、領域ａでは磁場強度が
極めて低いため、電子銃１より出射された電子ビーム２
は概略直線の軌道となる。Due to the formation of this magnetic field, the intensity of the magnetic field in the region a is extremely low, so that the electron beam 2 emitted from the electron gun 1
Is a substantially straight orbit.
【００３２】領域ｂでは磁場強度を有するため、領域ａ
を通過した電子ビーム２は偏向される軌道となる。Since the region b has a magnetic field strength, the region a
The electron beam 2 that has passed through becomes a trajectory that is deflected.
【００３３】本体系における電子ビーム軌道解析結果例
を図６に示す。図６は電子ビーム２を側面よりみた軌道
である。FIG. 6 shows an example of an electron beam orbit analysis result in the main body system. FIG. 6 is a trajectory of the electron beam 2 viewed from the side.
【００３４】図６から、電子ビーム２は電子銃１より斜
め上向きに出射され、補償偏向コイル４の上方付近まで
概略直進しており、主偏向コイル３による磁場が補償偏
向コイル４による逆磁場で補償されていることを示して
いる。As shown in FIG. 6, the electron beam 2 is emitted obliquely upward from the electron gun 1 and travels substantially straight up to near the upper part of the compensating deflection coil 4. It shows that it is compensated.
【００３５】また、補償偏向コイル４の上方付近からる
つぼ６内のターゲット材７に向かって次第に偏向され、
るつぼ６の上方付近より急速に偏向されてターゲット材
７に着点しており、るつぼ６の上方付近の磁場は主とし
て主偏向コイル３により生成されていることを示してい
る。Further, it is gradually deflected from the vicinity of above the compensating deflection coil 4 toward the target material 7 in the crucible 6,
It is rapidly deflected from the vicinity of the upper part of the crucible 6 and reaches the target material 7, indicating that the magnetic field near the upper part of the crucible 6 is mainly generated by the main deflection coil 3.
【００３６】本実施例で示すように、るつぼ６と電子銃
１は離して配置でき干渉しないという効果がある。As shown in this embodiment, there is an effect that the crucible 6 and the electron gun 1 can be arranged apart from each other and do not interfere with each other.
【００３７】反射電子９は、電子ビーム２のターゲット
材７への着点位置よりるつぼ６の上方に反射され、磁場
により主偏向コイル３側に偏向される。The reflected electrons 9 are reflected above the crucible 6 from the position where the electron beam 2 hits the target material 7, and are deflected toward the main deflection coil 3 by a magnetic field.
【００３８】るつぼ６の上方付近の磁場強度すなわち主
偏向コイル３の生成する磁場強度が大きいほど、反射電
子９の偏向される軌道径は小さくなり、るつぼ６の上方
に設置される被蒸着材１０への反射電子９による照射を
防止できる。As the magnetic field strength near the upper part of the crucible 6, ie, the magnetic field strength generated by the main deflection coil 3, is larger, the diameter of the orbit of the reflected electrons 9 to be deflected becomes smaller, and the material 10 to be deposited placed above the crucible 6 is set. Irradiation by reflected electrons 9 can be prevented.
【００３９】図２は、本発明の第２実施例である電子ビ
ーム偏向装置を示した図である。FIG. 2 is a view showing an electron beam deflecting device according to a second embodiment of the present invention.
【００４０】図１に示した実施例と異なる点は、主偏向
コイル３の両端に設置のポールピース５をポールピース
５の長手方向へ可動にしたことである。The difference from the embodiment shown in FIG. 1 is that the pole pieces 5 installed at both ends of the main deflection coil 3 are movable in the longitudinal direction of the pole piece 5.
【００４１】主偏向コイル３と補償偏向コイル４を有す
る本発明の実施例による電子ビーム偏向装置において
は、電子ビーム走査におけるるつぼ６内のターゲット７
材への電子ビーム２の着点位置に係わるるつぼ６の長軸
方向への直進性は、ポールピース５の長さに依存するこ
とがわかっており、ポールピース５を駆動機構８で長さ
を調整することにより、彎曲走査電子ビームを直進とす
ることが可能である。In the electron beam deflecting device according to the embodiment of the present invention having the main deflection coil 3 and the compensating deflection coil 4, the target 7 in the crucible 6 for electron beam scanning is used.
It is known that the straightness of the crucible 6 in the long axis direction, which is related to the position of the electron beam 2 on the material, depends on the length of the pole piece 5. By adjusting, it is possible to make the curved scanning electron beam go straight.
【００４２】駆動機構８は、ポールピース５に固定した
ラックにピニオンを噛み合わせ、そのピニオンを手動乃
至は電動モータで回転させてポールピース６をその長手
方向に移動させて主偏向コイル３から補償偏向コイル４
側への突き出し長さを調整できる機構である。The drive mechanism 8 engages a pinion with a rack fixed to the pole piece 5, rotates the pinion manually or by an electric motor to move the pole piece 6 in its longitudinal direction, and compensates for the main deflection coil 3. Deflection coil 4
This is a mechanism that can adjust the protruding length to the side.
【００４３】図７にポールピース５の突き出し長さを変
えることによる着点ビームの位置変化の状態を示す。FIG. 7 shows a state in which the position of the landing beam is changed by changing the protruding length of the pole piece 5.
【００４４】図７から、ポールピース５の突き出し長さ
が長くなるほど、即ちポールピース５が補償偏向コイル
４側に近づくほど、るつぼ６の長手方向（長軸方向）の
走査端側の電子ビーム２の着点位置は、電子銃１側に移
動する。As shown in FIG. 7, the longer the protruding length of the pole piece 5 is, that is, the closer the pole piece 5 is to the compensating deflection coil 4 side, the more the electron beam 2 on the scanning end side of the crucible 6 in the longitudinal direction (long axis direction). Moves to the electron gun 1 side.
【００４５】これは、ポールピース５が長くなるに従い
るつぼ６の上付近の磁場強度がるつぼ６の長手方向の中
心より同じく長手方向両端付近側で強くなり、電子ビー
ム２が該付近で強く偏向されるためである。This is because as the pole piece 5 becomes longer, the intensity of the magnetic field near the top of the crucible 6 becomes stronger near both ends in the longitudinal direction from the center in the longitudinal direction of the crucible 6, and the electron beam 2 is strongly deflected in the vicinity. That's because.
【００４６】また、るつぼ６の上付近の磁場強度の大小
により走査端側の電子ビーム２の偏向程度が異なる、す
なわち着点位置のずれが異なる。The degree of deflection of the electron beam 2 on the scanning end side differs depending on the magnitude of the magnetic field near the upper part of the crucible 6, that is, the displacement of the landing position differs.
【００４７】よって、本実施例によれば、磁場強度の大
小に応じてポールピース５の突き出し長さを変えること
により、着点電子ビームのるつぼ６の長手方向に対する
直進性を確保するのに効果がある。Therefore, according to the present embodiment, by changing the protruding length of the pole piece 5 according to the magnitude of the magnetic field strength, it is possible to obtain the effect of securing the rectilinearity of the spotting electron beam in the longitudinal direction of the crucible 6. There is.
【００４８】図３は、本発明の第３実施例である電子ビ
ーム偏向装置を示した図である。FIG. 3 is a view showing an electron beam deflecting device according to a third embodiment of the present invention.
【００４９】第３実施例で、図１及び図２の前例と異な
る点は、点線で図示した直線状の各ポールピース５を実
線で図示した各ポールピース５ａのように中心側に傾け
た（各ポールピース５ａの突き出し端が互いに近接する
方向に傾けること。）ことである。The third embodiment is different from the previous embodiment of FIGS. 1 and 2 in that each linear pole piece 5 shown by a dotted line is inclined toward the center side like each pole piece 5a shown by a solid line ( That is, the protruding ends of the pole pieces 5a are inclined in a direction approaching each other.)
【００５０】直線状のポールピース５の場合の点線で図
示した磁場ベクトル１２は傾斜が大で電子ビーム走査端
での短軸方向磁場成分が大きいため、この成分により長
軸方向に偏向され、着点付近の電子ビーム２は点線で図
示したように長軸方向外側に着点するようになり、入射
角が浅くなる。The magnetic field vector 12 indicated by the dotted line in the case of the linear pole piece 5 has a large gradient and a large magnetic component in the short axis direction at the scanning end of the electron beam. As shown by the dotted line, the electron beam 2 near the point comes to the outer side in the long axis direction, and the incident angle becomes shallow.
【００５１】本実施例では、ポールピース５ａのように
傾けることで、実線で図示した磁場ベクトル１２ａのよ
うに傾斜が緩やかになり、電子ビーム走査端での短軸方
向磁場成分が低下するため、この成分によるるつぼ６の
長軸方向への偏向も小となり、着点付近の電子ビーム２
は実線で図示したような着点となり、入射角は深くな
る。In the present embodiment, the inclination like the pole piece 5a makes the inclination gentle like the magnetic field vector 12a shown by the solid line, and the short-axis direction magnetic field component at the electron beam scanning end decreases. The deflection of the crucible 6 in the long axis direction due to this component is also small, and the electron beam 2 near the landing point is small.
Becomes the landing point as shown by the solid line, and the incident angle becomes deep.
【００５２】よって、本実施例によれば、着点付近の電
子ビームのるつぼ６の長軸方向への偏向による浅くなる
入射角を深くするのに効果がある。Therefore, according to the present embodiment, there is an effect that the incident angle which becomes shallow due to the deflection of the electron beam near the landing point in the long axis direction of the crucible 6 is increased.
【００５３】図４は、本発明の第４実施例である電子ビ
ーム偏向装置を示した図である。FIG. 4 is a view showing an electron beam deflector according to a fourth embodiment of the present invention.
【００５４】図４では、電子銃１から出射される電子ビ
ーム２の空間軌道を目的の軌道に合わせるため、主偏向
コイル３及び補償偏向コイル４の電源１９，２０を介し
てコイル電流を変えるアンペアターン（電流×コイル巻
数）調整機能及び主偏向コイル３と補償偏向コイル４の
アンペアターン比調整機能を持たせた制御装置１３を設
置したものである。In FIG. 4, in order to adjust the spatial trajectory of the electron beam 2 emitted from the electron gun 1 to the target trajectory, the ampere current for changing the coil current via the power supplies 19 and 20 of the main deflection coil 3 and the compensating deflection coil 4 is shown. A control device 13 having a turn (current × coil winding number) adjustment function and an ampere-turn ratio adjustment function of the main deflection coil 3 and the compensation deflection coil 4 is installed.
【００５５】図８では、電子銃１から出射される電子ビ
ーム２の空間軌道を目的の軌道に合わせる場合の軌道状
態を示している。FIG. 8 shows a trajectory state when the spatial trajectory of the electron beam 2 emitted from the electron gun 1 is adjusted to a target trajectory.
【００５６】図８において、電子ビーム２が目的とする
軌道である。仮に、電子ビーム２の軌道より上を通る電
子ビーム２ａが得られている軌道と仮定し、これを電子
ビーム２の軌道に合わせる場合について例として説明す
る。In FIG. 8, the electron beam 2 is the target trajectory. It is assumed that the trajectory of the electron beam 2a passing above the trajectory of the electron beam 2 is obtained, and a case where the trajectory is adjusted to the trajectory of the electron beam 2 will be described as an example.
【００５７】電子ビーム２ａの軌道は、電子ビーム２の
軌道より上を通るため、磁場強度は電子ビーム２ａの場
合の方が小さい。Since the trajectory of the electron beam 2a passes above the trajectory of the electron beam 2, the magnetic field intensity is smaller in the case of the electron beam 2a.
【００５８】初めに、るつぼ６の上付近のビーム軌道を
電子ビーム２ａを電子ビーム２に合わせるため、制御装
置１３により主偏向コイル３と補償偏向コイル４につき
アンペアターン比を変えずにアンペアターンを増加す
る。First, in order to adjust the beam trajectory near the upper part of the crucible 6 to the electron beam 2 a with the electron beam 2, the controller 13 changes the ampere turn of the main deflection coil 3 and the compensation deflection coil 4 without changing the ampere turn ratio. To increase.
【００５９】これにより、るつぼ６の上付近の磁場強度
が大、すなわち偏向径が小となり、電子ビーム２ｂの軌
道となる。As a result, the intensity of the magnetic field near the upper part of the crucible 6 is large, that is, the deflection diameter is small, and the trajectory of the electron beam 2b is obtained.
【００６０】次に、電子ビーム２ｂの電子銃１から補償
偏向コイル４上付近までの軌道を電子ビーム２に合わせ
るため、制御装置１３により電子ビーム２ｂの着点での
磁場強度を変えずに主偏向コイル３と補償偏向コイル４
のアンペアターン比を小すなわち補償偏向コイル４によ
る補償磁場を少し大きくする。Next, in order to match the trajectory of the electron beam 2b from the electron gun 1 to the vicinity of the compensating deflection coil 4 with the electron beam 2, the controller 13 does not change the magnetic field strength at the point where the electron beam 2b is applied. Deflection coil 3 and compensation deflection coil 4
Is small, that is, the compensation magnetic field by the compensation deflection coil 4 is slightly increased.
【００６１】これにより、電子ビーム２ｂの電子銃１か
ら補償偏向コイル４上付近までの軌道は上側に移動し、
目的とする電子ビーム２の軌道とすることができる。As a result, the trajectory of the electron beam 2b from the electron gun 1 to the vicinity of the compensation deflection coil 4 moves upward,
The desired trajectory of the electron beam 2 can be obtained.
【００６２】本実施例によれば、主偏向コイル３と補償
偏向コイル４のアンペアターン及びアンペアターン比を
調整することにより、電子銃１の位置，電子ビームの出
射仰角，着点電子ビーム入射角を変えずに電子ビームを
目的とする軌道とするのに効果がある。According to this embodiment, the position of the electron gun 1, the exit elevation angle of the electron beam, and the incident angle of the electron beam are adjusted by adjusting the ampere-turn and the ampere-turn ratio of the main deflection coil 3 and the compensating deflection coil 4. This is effective in setting the electron beam to the desired orbit without changing.
【００６３】本発明のいずれの実施例でも、主偏向コイ
ル３による磁場のうち電子銃１から補償偏向コイル４の
上付近までの空間磁場を補償偏向コイル４による磁場で
補償することができるため、電子銃より出射される電子
ビーム２は補償偏向コイル４の上付近まで極低磁場で概
略直線状の軌道を描き、るつぼ６の上付近の補償されな
い磁場で急激にるつぼ６側に偏向される軌道を作ること
が可能になる。In any of the embodiments of the present invention, the spatial magnetic field from the electron gun 1 to the vicinity of the upper part of the compensating deflection coil 4 can be compensated by the magnetic field of the compensating deflection coil 4 among the magnetic fields generated by the main deflection coil 3. The electron beam 2 emitted from the electron gun draws a substantially linear trajectory with a very low magnetic field up to near the compensating deflection coil 4, and the trajectory is rapidly deflected to the crucible 6 side by the uncompensated magnetic field near the top of the crucible 6. It becomes possible to make.
【００６４】これにより、るつぼ６の上付近を強磁場と
する体系でも、電子銃１とるつぼ６とが干渉しない配置
が達成でき、且つるつぼ６の上付近の強磁場により反射
電子の軌道径も小さくできるため、例えば被蒸着材１０
への反射電子の照射等、るつぼ６の上方への反射電子の
照射を防止できるという効果が得られる。As a result, even in a system in which a strong magnetic field is formed in the vicinity of the crucible 6, an arrangement in which the electron gun 1 and the crucible 6 do not interfere with each other can be achieved, and the orbit diameter of the reflected electrons can be reduced by the strong magnetic field in the vicinity of the crucible 6. Because it can be made smaller,
The effect of preventing the irradiation of the reflected electrons above the crucible 6, such as the irradiation of the reflected electrons to the crucible 6, can be obtained.
【００６５】[0065]
【発明の効果】請求項１の発明によれば、るつぼと電子
銃との配置上の干渉を避けながら反射電子による悪影響
を受けないようにすることができる。According to the first aspect of the present invention, it is possible to avoid the interference in the arrangement between the crucible and the electron gun and to prevent the adverse effects of the reflected electrons.
【００６６】請求項２の発明によれば、請求項１の発明
による効果に加えて、電子ビームをるつぼの長手方向へ
振るような走査を行った際のその走査方向への直進性を
補償することができる。According to the second aspect of the present invention, in addition to the effect of the first aspect of the present invention, when the electron beam is scanned in such a manner that the electron beam is swung in the longitudinal direction of the crucible, straightness in the scanning direction is compensated. be able to.
【００６７】請求項３の発明によれば、請求項１又は請
求項２の発明による効果に加えて、るつぼ内のターゲッ
ト材に対する電子ビームの着点位置がるつぼの長手方向
に大きくずれたり入射角が浅くなったりすることを抑制
できる。According to the third aspect of the invention, in addition to the effect of the first or second aspect, the position of the electron beam on the target material in the crucible is largely shifted in the longitudinal direction of the crucible or the angle of incidence. Can be suppressed from becoming shallow.
【００６８】請求項４の発明によれば、請求項１又は請
求項２又は請求項３の発明による効果に加えて、電子銃
から出射された電子ビームの軌道を所望の軌道に調整で
きる効果が得られる。According to the fourth aspect of the present invention, in addition to the effect of the first, second, or third aspect, the trajectory of the electron beam emitted from the electron gun can be adjusted to a desired trajectory. can get.
【図１】本発明の第１実施例による電子ビーム偏向装置
の構成機器の配置を示した斜視図である。FIG. 1 is a perspective view showing an arrangement of components of an electron beam deflector according to a first embodiment of the present invention.
【図２】本発明の第２実施例による電子ビーム偏向装置
の構成機器の配置を示した斜視図である。FIG. 2 is a perspective view showing an arrangement of components of an electron beam deflector according to a second embodiment of the present invention.
【図３】本発明の第３実施例による電子ビーム偏向装置
の構成機器の配置を示した斜視図である。FIG. 3 is a perspective view showing an arrangement of components of an electron beam deflector according to a third embodiment of the present invention.
【図４】図１〜図３の各実施例に電子ビーム軌道修正の
ための制御装置を付加した変形例を示した本発明の第４
実施例による電子ビーム偏向装置の概略構成を示した模
式図である。FIG. 4 is a fourth embodiment of the present invention showing a modification in which a control device for correcting an electron beam trajectory is added to each of the embodiments shown in FIGS. 1 to 3;
FIG. 1 is a schematic diagram showing a schematic configuration of an electron beam deflection device according to an embodiment.
【図５】本発明の各実施例における各偏向コイルによる
磁場の磁束密度を示したグラフ図である。FIG. 5 is a graph showing a magnetic flux density of a magnetic field by each deflection coil in each embodiment of the present invention.
【図６】本発明の各実施例による電子ビーム軌道を表し
た立面図である。FIG. 6 is an elevation view illustrating an electron beam trajectory according to each embodiment of the present invention.
【図７】本発明の第２実施例におけるポールピースの突
き出し長さの電子ビームのターゲット材への着点位置の
変化を表したグラフ図である。FIG. 7 is a graph showing a change in a position where an electron beam of a projection length of a pole piece is applied to a target material in a second embodiment of the present invention.
【図８】本発明の第４実施例における電子ビーム軌道修
正状況を表した概念図である。FIG. 8 is a conceptual diagram showing an electron beam trajectory correction state in a fourth embodiment of the present invention.
【図９】従来例による電子ビーム偏向装置の各構成機器
の配置を示した斜視図である。FIG. 9 is a perspective view showing an arrangement of components of an electron beam deflector according to a conventional example.
【図１０】るつぼからの反射電子の反射軌道を示した概
念図である。FIG. 10 is a conceptual diagram showing a reflection trajectory of reflected electrons from a crucible.
【図１１】他の従来例による電子ビーム偏向装置の各構
成機器の配置を示した立面図である。FIG. 11 is an elevation view showing an arrangement of components of an electron beam deflector according to another conventional example.
１…電子銃、２…電子ビーム、３…主偏向コイル、４…
補償偏向コイル、５…ポールピース、６…るつぼ、７…
ターゲット材、８…駆動機構、９…反射電子、１０…被
蒸着材、１１…蒸気封入器、１２…磁場ベクトル、１３
…制御装置、１９…主偏向コイル用電源、２０…補償偏
向コイル用電源。1. Electron gun 2. Electron beam 3. Main deflection coil 4.
Compensating deflection coil, 5 ... Pole piece, 6 ... Crucible, 7 ...
Target material, 8 drive mechanism, 9 reflected electrons, 10 material to be deposited, 11 vapor enclosure, 12 magnetic field vector, 13
... Control device, 19 ... Power supply for main deflection coil, 20 ... Power supply for compensation deflection coil.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山村 豪 茨城県日立市幸町三丁目１番１号 株式会 社日立製作所日立工場内 (72)発明者 佐野 建治 茨城県日立市幸町三丁目２番２号 日立ニ ュークリアエンジニアリング株式会社内 (72)発明者 亀山 博史 茨城県日立市幸町三丁目２番２号 日立ニ ュークリアエンジニアリング株式会社内 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Go Yamamura 3-1-1, Sachimachi, Hitachi-shi, Ibaraki Pref. Hitachi, Ltd. Hitachi Plant (72) Inventor Kenji Sano 3-2-2 Sachimachi, Hitachi-shi, Ibaraki No. 2 within Hitachi New Clear Engineering Co., Ltd. (72) Inventor Hiroshi Kameyama 3-2-2, Sachimachi, Hitachi City, Ibaraki Prefecture Within Hitachi New Clear Engineering Co., Ltd.
Claims (4)
内に向けて偏向させる偏向磁場を発生する主偏向コイル
と、 平面で見ると前記るつぼを挟む配置にて前記主偏向コイ
ルの両端側に装備されたポールピースとを備えた電子ビ
ーム偏向装置において、 平面で見ると、前記るつぼを挟んで前記主偏向コイルの
反対側の前記電子銃と前記るつぼとの間に、前記偏向磁
場に比べて強度が低くて逆向きの磁場を発生する補償偏
向コイルを備えたことを特徴とした電子ビーム偏向装
置。1. A crucible for accommodating a target material, an electron gun for emitting an electron beam at an upward angle of attack, and a deflection magnetic field for deflecting the electron beam emitted from the electron gun toward the crucible. An electron beam deflecting device comprising: a main deflection coil to be generated; and pole pieces provided on both ends of the main deflection coil in an arrangement sandwiching the crucible when viewed in a plane. An electron beam, comprising a compensating deflection coil that generates a magnetic field having a strength lower than that of the deflection magnetic field and opposite to that between the electron gun and the crucible on the opposite side of the main deflection coil. Deflection device.
手方向へ移動自在に装備してあることを特徴とした電子
ビーム偏向装置。2. An electron beam deflector according to claim 1, wherein said pole piece is provided so as to be movable in its longitudinal direction.
ースを主偏向コイルから離れるにしたがって互いに接近
する方向に配置されていることを特徴とした電子ビーム
偏向装置。3. The electron beam deflector according to claim 1, wherein the pole pieces are arranged in a direction approaching each other as the pole pieces are separated from the main deflection coil.
て、各偏向コイルに各偏向コイルのアンペアターン及び
アンペアターン比を調整する制御装置を備えたことを特
徴とした電子ビーム偏向装置。4. An electron beam deflecting device according to claim 1, wherein each deflecting coil is provided with a control device for adjusting the ampere-turn and the ampere-turn ratio of each deflecting coil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05925598A JP3527843B2 (en) | 1998-03-11 | 1998-03-11 | Electron beam deflector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05925598A JP3527843B2 (en) | 1998-03-11 | 1998-03-11 | Electron beam deflector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11256317A true JPH11256317A (en) | 1999-09-21 |
| JP3527843B2 JP3527843B2 (en) | 2004-05-17 |
Family
ID=13108103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05925598A Expired - Fee Related JP3527843B2 (en) | 1998-03-11 | 1998-03-11 | Electron beam deflector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3527843B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005344137A (en) * | 2004-05-31 | 2005-12-15 | Tsukishima Kikai Co Ltd | Electron beam gun and plasma system |
| WO2013153604A1 (en) * | 2012-04-09 | 2013-10-17 | 株式会社シンクロン | Electron gun device |
| JPWO2013153604A1 (en) * | 2012-04-09 | 2015-12-17 | 株式会社シンクロン | Electron gun equipment |
| CN113990722A (en) * | 2021-10-09 | 2022-01-28 | 杭州大和热磁电子有限公司 | Electron beam emission device |
-
1998
- 1998-03-11 JP JP05925598A patent/JP3527843B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005344137A (en) * | 2004-05-31 | 2005-12-15 | Tsukishima Kikai Co Ltd | Electron beam gun and plasma system |
| JP4515158B2 (en) * | 2004-05-31 | 2010-07-28 | 月島機械株式会社 | Electron beam gun and plasma equipment |
| WO2013153604A1 (en) * | 2012-04-09 | 2013-10-17 | 株式会社シンクロン | Electron gun device |
| JPWO2013153604A1 (en) * | 2012-04-09 | 2015-12-17 | 株式会社シンクロン | Electron gun equipment |
| CN113990722A (en) * | 2021-10-09 | 2022-01-28 | 杭州大和热磁电子有限公司 | Electron beam emission device |
| CN113990722B (en) * | 2021-10-09 | 2024-05-10 | 杭州大和热磁电子有限公司 | Electron beam emission device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3527843B2 (en) | 2004-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0896735A (en) | X-ray radiator with electronic source to emit electron beam bundle along extended anode | |
| JP2002540581A (en) | Method and apparatus for extending the life of an x-ray target | |
| TWI381413B (en) | Irradiation system with ion beam/charged particle beam | |
| US8957389B2 (en) | Electromagnetic lens for electron beam exposure apparatus | |
| JP2007522622A (en) | Cathode head with focus control | |
| JP2000204470A (en) | Ion implantation apparatus, ion beam route forming apparatus and ion beam processing of workpiece | |
| JP2000204470A5 (en) | ||
| US6635889B2 (en) | Ion implantation apparatus suited for low energy ion implantation and tuning method for ion source system thereof | |
| JPH11256317A (en) | Electronic beam deflector | |
| US5418348A (en) | Electron beam source assembly | |
| US4064352A (en) | Electron beam evaporator having beam spot control | |
| JP4959723B2 (en) | Electron gun and electron beam exposure apparatus | |
| US3814829A (en) | Device for electron-beam heating of materials mainly for their melting and evaporation | |
| JP2015007269A (en) | Electron gun device for electron beam vapor deposition | |
| JP2840616B2 (en) | Indirectly heated X-ray tube with flat cathode | |
| JP4050848B2 (en) | Electron beam evaporator | |
| JP3143801B2 (en) | Ion plating equipment | |
| US4382213A (en) | Image pickup apparatus | |
| JPS5948508B2 (en) | High brightness electron beam generator | |
| JPS6142845A (en) | Method and device for controlling focused state of deflectedelectron beam | |
| KR0175922B1 (en) | Method and device for the deflection of a beam | |
| SU1061640A1 (en) | Cathode-ray gun | |
| JPH0317343B2 (en) | ||
| JP4975095B2 (en) | Electron gun and electron beam exposure apparatus | |
| JP3280187B2 (en) | Scanning electron microscope |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Effective date: 20040120 Free format text: JAPANESE INTERMEDIATE CODE: A971007 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Effective date: 20040217 Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20040223 |
|
| R150 | Certificate of patent (=grant) or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313115 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 4 Free format text: PAYMENT UNTIL: 20080227 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080227 Year of fee payment: 4 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313115 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080227 Year of fee payment: 4 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080227 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 5 Free format text: PAYMENT UNTIL: 20090227 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 5 Free format text: PAYMENT UNTIL: 20090227 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 6 Free format text: PAYMENT UNTIL: 20100227 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 6 Free format text: PAYMENT UNTIL: 20100227 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 7 Free format text: PAYMENT UNTIL: 20110227 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 8 Free format text: PAYMENT UNTIL: 20120227 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 8 Free format text: PAYMENT UNTIL: 20120227 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130227 Year of fee payment: 9 |
|
| LAPS | Cancellation because of no payment of annual fees |