JPH11238596A - Plasma processing device - Google Patents
Plasma processing deviceInfo
- Publication number
- JPH11238596A JPH11238596A JP10039947A JP3994798A JPH11238596A JP H11238596 A JPH11238596 A JP H11238596A JP 10039947 A JP10039947 A JP 10039947A JP 3994798 A JP3994798 A JP 3994798A JP H11238596 A JPH11238596 A JP H11238596A
- Authority
- JP
- Japan
- Prior art keywords
- lower electrode
- electrode
- substrate
- heat transfer
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置や液晶
表示装置（ＬＣＤ）などの製造に用いられるドライエッ
チング装置、スパッタ装置、ＣＶＤ装置等のプラズマ処
理装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus such as a dry etching apparatus, a sputtering apparatus, and a CVD apparatus used for manufacturing a semiconductor device, a liquid crystal display (LCD), and the like.
【０００２】[0002]
【従来の技術】近年、シリコン基板等の被処理基板をプ
ラズマ処理する際、基板を冷却したり、または加熱する
手段を用いて処理温度を安定化するプラズマ処理装置が
利用されるようになってきた。2. Description of the Related Art In recent years, when a substrate to be processed such as a silicon substrate is subjected to plasma processing, a plasma processing apparatus for stabilizing a processing temperature by using a means for cooling or heating the substrate has been used. Was.
【０００３】以下、従来のプラズマ処理装置について説
明する。図２は従来のプラズマ処理装置の断面を示すも
のである。図２において、２１は処理槽、２２は真空排
気ポンプ、２３は反応ガス吹き出し口を有する上部電極
であり、上部電極２３はアース２４で接地されている。
２５はシリコン基板やガラス基板等の被処理基板、２６
は凸面形状の下部電極であり、下部電極２６の表面は絶
縁膜２７で覆われている。下部電極２６は絶縁板２８上
に置かれ、高周波電源２９に接続されている。Hereinafter, a conventional plasma processing apparatus will be described. FIG. 2 shows a cross section of a conventional plasma processing apparatus. 2, reference numeral 21 denotes a processing tank, 22 denotes a vacuum pump, 23 denotes an upper electrode having a reaction gas outlet, and the upper electrode 23 is grounded by an earth 24.
25 is a substrate to be processed such as a silicon substrate or a glass substrate, 26
Is a convex lower electrode, and the surface of the lower electrode 26 is covered with an insulating film 27. The lower electrode 26 is placed on an insulating plate 28 and connected to a high frequency power supply 29.
【０００４】下部電極２６の中心部に伝熱ガス供給口３
０が設けられ、下部電極２６の内部には冷却水の配管３
１があり、冷却水が循環している。下部電極２６の周囲
にはクランプリング３２が設けられている。A heat transfer gas supply port 3 is provided at the center of the lower electrode 26.
0 is provided, and a cooling water pipe 3 is provided inside the lower electrode 26.
1 and cooling water is circulating. A clamp ring 32 is provided around the lower electrode 26.
【０００５】以上のように構成されたプラズマ処理装置
について、以下その動作を説明する。The operation of the plasma processing apparatus configured as described above will be described below.
【０００６】まず、被処理基板２５を下部電極２６の上
に載せ、クランプリング３２にて被処理基板２５と下部
電極２６を密着させる。次に、真空ポンプ２２で処理槽
２１内を排気してから反応ガスを処理槽２１内に導入
し、伝熱ガス供給口３０よりヘリウムガスを供給し、被
処理基板２５と下部電極２６の間に充満する。次に、高
周波電源２９により高周波電力を印加することにより下
部電極２６と上部電極２３の間にプラズマを発生させ
る。このとき、プラズマの発生によって雰囲気が高温に
なるために、被処理基板２５が加熱される。しかし、下
部電極２６は配管３１内の冷却水にて一定に温度制御さ
れており、熱伝導性の優れているヘリウムガスにより被
処理基板２５の熱を下部電極２６に伝えることによっ
て、被処理基板２５の温度を一定に保つ。First, the substrate 25 to be processed is placed on the lower electrode 26, and the substrate 25 to be processed is brought into close contact with the lower electrode 26 by the clamp ring 32. Next, the inside of the processing tank 21 is evacuated by the vacuum pump 22, the reaction gas is introduced into the processing tank 21, helium gas is supplied from the heat transfer gas supply port 30, and the space between the substrate 25 and the lower electrode 26 is processed. To be charged. Next, plasma is generated between the lower electrode 26 and the upper electrode 23 by applying high frequency power from the high frequency power supply 29. At this time, the substrate 25 is heated because the temperature of the atmosphere becomes high due to the generation of plasma. However, the temperature of the lower electrode 26 is controlled to be constant by the cooling water in the pipe 31, and the heat of the substrate 25 to be processed is transmitted to the lower electrode 26 by helium gas having excellent thermal conductivity. Keep the temperature of 25 constant.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら上記の従
来の構成では、絶縁膜２７の絶縁によって、下部電極２
６に対して絶縁されフローティングとなっている被処理
基板２５は、プラズマの発生によって電荷が蓄積され、
−３００〜−４００Ｖの電位となる。このとき、伝熱ガ
ス供給口３０内には一定圧力のヘリウムガスで満たされ
た空間が存在するので、負電位に帯電された被処理基板
２５と高周波電源２９の高周波電力が印加された下部電
極２６との間で異常放電が発生し、被処理基板２５に損
傷を与えるという欠点を有していた。However, in the above-mentioned conventional structure, the lower electrode 2 is not provided by the insulation of the insulating film 27.
The substrate to be processed 25 which is insulated and floating with respect to 6 accumulates charges due to generation of plasma,
The potential becomes -300 to -400V. At this time, since there is a space filled with helium gas at a constant pressure in the heat transfer gas supply port 30, the substrate 25 to be processed charged to a negative potential and the lower electrode to which the high-frequency power of the high-frequency power supply 29 is applied. 26 has a drawback that abnormal discharge occurs between the substrate 26 and the substrate 25 to be processed.
【０００８】本発明は上記従来の問題点を解決するもの
で、被処理基板と電極間の異常放電を防止するプラズマ
処理装置を提供することを目的とする。An object of the present invention is to solve the above-mentioned conventional problems, and an object of the present invention is to provide a plasma processing apparatus for preventing abnormal discharge between a substrate to be processed and an electrode.
【０００９】[0009]
【課題を解決するための手段】この目的を達成するため
に本発明のプラズマ処理装置は、処理槽の内部に設けら
れた第１，第２の電極と、表面を絶縁膜で覆われた前記
第１の電極に被処理基板を固定する基板クランプ手段
と、前記第２の電極に設けられ反応ガスを供給する反応
ガス供給手段と、前記第１の電極に設けられ前記第１の
電極と前記被処理基板との間の空間に伝熱ガスを供給す
る伝熱ガス供給口とを有し、前記第１の電極または前記
第２の電極の何れかに高周波電力を供給してプラズマを
発生するプラズマ処理装置において、前記伝熱ガス供給
口に多孔質絶縁物を装着し、前記多孔質絶縁物を介して
伝熱ガスを供給する構成を有している。In order to achieve this object, a plasma processing apparatus according to the present invention comprises a first and a second electrode provided inside a processing tank, and the first and second electrodes having a surface covered with an insulating film. A substrate clamping means for fixing a substrate to be processed to a first electrode; a reactive gas supply means provided on the second electrode for supplying a reactive gas; and a reactive gas supply means provided on the first electrode; A heat transfer gas supply port for supplying a heat transfer gas to a space between the substrate and the substrate to be processed; and a high-frequency power is supplied to either the first electrode or the second electrode to generate plasma. The plasma processing apparatus has a configuration in which a porous insulator is attached to the heat transfer gas supply port and the heat transfer gas is supplied through the porous insulator.
【００１０】この構成によって、伝熱ガス供給口の電気
絶縁が図れ、下部電極と被処理基板との間の異常放電を
防止することができる。With this configuration, electrical insulation of the heat transfer gas supply port can be achieved, and abnormal discharge between the lower electrode and the substrate to be processed can be prevented.
【００１１】[0011]
【発明の実施の形態】以下、本発明の一実施形態につい
て、図面を参照しながら説明する。An embodiment of the present invention will be described below with reference to the drawings.
【００１２】図１は本発明の一実施形態におけるプラズ
マ処理装置の断面を示す図である。図１において、１は
処理槽、２は真空排気ポンプ、３は反応ガス吹き出し口
を有する上部電極であり、上部電極３はアース４で接地
されている。５は被処理基板としてのシリコン基板、６
は凸面形状の下部電極であり、下部電極６の表面は絶縁
膜７で覆われている。下部電極６は絶縁板８上に置か
れ、高周波電源９に電気的に接続されている。下部電極
６の中心部には伝熱ガス供給口１０が設けられており、
伝熱ガス供給口１０内はセラミックスなどの通気性のあ
る多孔質絶縁物１１を埋め込んである。下部電極６の内
部には冷却水の配管１２があり、冷却水が循環してい
る。下部電極６の周囲にはクランプリング１３が設けら
れ、クランプリング１３はシリコン基板５を反らせた状
態で下部電極６上に固定する。FIG. 1 is a diagram showing a cross section of a plasma processing apparatus according to an embodiment of the present invention. In FIG. 1, 1 is a processing tank, 2 is a vacuum pump, 3 is an upper electrode having a reaction gas outlet, and the upper electrode 3 is grounded by an earth 4. 5 is a silicon substrate as a substrate to be processed, 6
Denotes a convex lower electrode, and the surface of the lower electrode 6 is covered with an insulating film 7. The lower electrode 6 is placed on an insulating plate 8 and is electrically connected to a high frequency power supply 9. A heat transfer gas supply port 10 is provided in the center of the lower electrode 6,
Inside the heat transfer gas supply port 10, a porous insulator 11 having air permeability such as ceramics is embedded. A cooling water pipe 12 is provided inside the lower electrode 6 and circulates the cooling water. A clamp ring 13 is provided around the lower electrode 6, and the clamp ring 13 is fixed on the lower electrode 6 with the silicon substrate 5 warped.
【００１３】以上のように構成されたプラズマ処理装置
について、その動作を説明する。まず、シリコン基板５
と下部電極６との間に空間が生じるように、クランプリ
ング１３によってシリコン基板５を反らせて下部電極６
上に固定させる。次に、真空ポンプ２で処理槽１内を排
気してから、上部電極３の反応ガス吹き出し口から反応
ガスを処理槽１内に導入する。また、伝熱ガス供給口１
０の多孔質絶縁物１１を通してヘリウムガス（伝熱ガ
ス）を供給し、シリコン基板５と下部電極６の間にヘリ
ウムガスを充満させる。次に、高周波電源９の高周波電
力を下部電極６に印加し、下部電極６と上部電極３の間
にプラズマを発生させる。このとき、プラズマの発生に
よってシリコン基板５が加熱されるが、シリコン基板５
の熱は熱伝導性の優れているヘリウムガスによって下部
電極に伝達される。更に、その下部電極６は、配管１２
内を還流する冷却水で一定に温度制御される。従って、
プラズマ発生によって周囲温度が上昇しても、シリコン
基板５は温度を一定に保つことができる。The operation of the plasma processing apparatus configured as described above will be described. First, the silicon substrate 5
The silicon substrate 5 is warped by the clamp ring 13 so that a space is formed between the lower electrode 6 and the lower electrode 6.
Fix on top. Next, after the inside of the processing tank 1 is evacuated by the vacuum pump 2, the reaction gas is introduced into the processing tank 1 from the reaction gas outlet of the upper electrode 3. Heat transfer gas supply port 1
A helium gas (heat transfer gas) is supplied through the porous insulator 11 to fill the space between the silicon substrate 5 and the lower electrode 6 with the helium gas. Next, the high frequency power of the high frequency power supply 9 is applied to the lower electrode 6 to generate plasma between the lower electrode 6 and the upper electrode 3. At this time, the silicon substrate 5 is heated by the generation of plasma.
Is transferred to the lower electrode by helium gas having excellent thermal conductivity. Further, the lower electrode 6 is connected to a pipe 12
The temperature is controlled to be constant by the cooling water flowing back inside. Therefore,
Even if the ambient temperature rises due to plasma generation, the temperature of the silicon substrate 5 can be kept constant.
【００１４】この構成によれば、シリコン基板５と下部
電極６との間の電気的絶縁は、下部電極６の表面に被覆
された絶縁膜７と、伝熱ガス供給口１０内に埋め込まれ
た多孔質絶縁物１１とによってなされ、シリコン基板５
の裏面と下部電極６間での異常放電の発生を防止でき
る。According to this configuration, electrical insulation between the silicon substrate 5 and the lower electrode 6 is buried in the insulating film 7 covering the surface of the lower electrode 6 and in the heat transfer gas supply port 10. The silicon substrate 5 is formed by the porous insulator 11.
The occurrence of abnormal discharge between the back surface of the substrate and the lower electrode 6 can be prevented.
【００１５】[0015]
【発明の効果】以上のように本発明のプラズマ処理装置
は、下部電極の伝熱ガス供給口内に埋め込まれた多孔質
絶縁物を介して伝熱ガスを供給するから、下部電極と被
処理基板との絶縁が良好になり、被処理基板裏面と下部
電極の間での異常放電を防止すると共に、被処理基板の
温度を一定に保って、プラズマ処理を安定に行うことが
できる。As described above, in the plasma processing apparatus according to the present invention, the heat transfer gas is supplied through the porous insulator embedded in the heat transfer gas supply port of the lower electrode. Insulation between the substrate and the lower electrode can be prevented, abnormal discharge between the lower electrode and the lower electrode can be prevented, and the temperature of the substrate can be kept constant to stably perform plasma processing.
【図１】本発明の一実施形態におけるプラズマ処理装置
の断面構造図FIG. 1 is a sectional structural view of a plasma processing apparatus according to an embodiment of the present invention.
【図２】従来のプラズマ処理装置の縦断面図FIG. 2 is a longitudinal sectional view of a conventional plasma processing apparatus.
１ 処理槽 ２ 真空排気ポンプ ３ 上部電極 ４ アース ５ シリコン基板 ６ 下部電極 ７ 絶縁膜 ８ 絶縁板 ９ 高周波電源 １０ 伝熱ガス供給口 １１ 多孔質絶縁物 １２ 冷却水の配管 １３ クランプリング DESCRIPTION OF SYMBOLS 1 Processing tank 2 Vacuum pump 3 Upper electrode 4 Ground 5 Silicon substrate 6 Lower electrode 7 Insulating film 8 Insulating plate 9 High frequency power supply 10 Heat transfer gas supply port 11 Porous insulator 12 Cooling water pipe 13 Clamp ring
フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０１Ｌ 21/205 Ｈ０１Ｌ 21/205 21/3065 21/31 Ｃ 21/31 21/302 Ｂ Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 21/205 H01L 21/205 21/3065 21/31 C 21/31 21/302 B
Claims (1)
電極と、表面を絶縁膜で覆われた前記第１の電極に被処
理基板を固定する基板クランプ手段と、前記第２の電極
に設けられ反応ガスを供給する反応ガス供給手段と、前
記第１の電極に設けられ前記第１の電極と前記被処理基
板との間の空間に伝熱ガスを供給する伝熱ガス供給口と
を有し、前記第１の電極または前記第２の電極の何れか
に高周波電力を供給してプラズマを発生するプラズマ処
理装置において、前記伝熱ガス供給口に多孔質絶縁物を
装着し、前記多孔質絶縁物を介して伝熱ガスを供給する
ことを特徴とするプラズマ処理装置。A first electrode provided in a processing tank; a substrate clamping means for fixing a substrate to be processed to the first electrode having a surface covered with an insulating film; A reaction gas supply means provided on the first electrode for supplying a reaction gas, and a heat transfer gas supply provided on the first electrode for supplying a heat transfer gas to a space between the first electrode and the substrate to be processed In a plasma processing apparatus having a port and supplying high-frequency power to either the first electrode or the second electrode to generate plasma, a porous insulator is attached to the heat transfer gas supply port. A plasma processing apparatus for supplying a heat transfer gas through the porous insulator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03994798A JP3736103B2 (en) | 1998-02-23 | 1998-02-23 | Plasma processing apparatus and processing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03994798A JP3736103B2 (en) | 1998-02-23 | 1998-02-23 | Plasma processing apparatus and processing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11238596A true JPH11238596A (en) | 1999-08-31 |
| JP3736103B2 JP3736103B2 (en) | 2006-01-18 |
Family
ID=12567164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03994798A Expired - Fee Related JP3736103B2 (en) | 1998-02-23 | 1998-02-23 | Plasma processing apparatus and processing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3736103B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002134476A (en) * | 2000-10-24 | 2002-05-10 | Tokyo Electron Ltd | Plasma processing system |
| JP2006066824A (en) * | 2004-08-30 | 2006-03-09 | Sumitomo Precision Prod Co Ltd | Plasma etching equipment and base, and its driving method |
| WO2008099789A1 (en) * | 2007-02-15 | 2008-08-21 | Creative Technology Corporation | Electrostatic chuck |
| JP2009218607A (en) * | 2001-11-30 | 2009-09-24 | Tokyo Electron Ltd | Processing apparatus and gas discharge suppressing member |
| US10370757B2 (en) | 2013-02-04 | 2019-08-06 | Ulvac, Inc. | Thin substrate processing device |
| CN110197787A (en) * | 2018-02-26 | 2019-09-03 | 东京毅力科创株式会社 | The manufacturing method of plasma processing apparatus and mounting table |
-
1998
- 1998-02-23 JP JP03994798A patent/JP3736103B2/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002134476A (en) * | 2000-10-24 | 2002-05-10 | Tokyo Electron Ltd | Plasma processing system |
| JP4684403B2 (en) * | 2000-10-24 | 2011-05-18 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP2009218607A (en) * | 2001-11-30 | 2009-09-24 | Tokyo Electron Ltd | Processing apparatus and gas discharge suppressing member |
| JP2006066824A (en) * | 2004-08-30 | 2006-03-09 | Sumitomo Precision Prod Co Ltd | Plasma etching equipment and base, and its driving method |
| JP4519576B2 (en) * | 2004-08-30 | 2010-08-04 | 住友精密工業株式会社 | Base for plasma etching apparatus and plasma etching apparatus provided with the same |
| WO2008099789A1 (en) * | 2007-02-15 | 2008-08-21 | Creative Technology Corporation | Electrostatic chuck |
| JP5087561B2 (en) * | 2007-02-15 | 2012-12-05 | 株式会社クリエイティブ テクノロジー | Electrostatic chuck |
| US10370757B2 (en) | 2013-02-04 | 2019-08-06 | Ulvac, Inc. | Thin substrate processing device |
| CN110197787A (en) * | 2018-02-26 | 2019-09-03 | 东京毅力科创株式会社 | The manufacturing method of plasma processing apparatus and mounting table |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3736103B2 (en) | 2006-01-18 |
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