JP4290207B2 - Semiconductor element manufacturing apparatus and semiconductor element manufacturing method - Google Patents

Description

  The present invention relates to a semiconductor device manufacturing apparatus and a semiconductor device manufactured thereby, and in particular, is used for manufacturing a semiconductor device by etching or forming a film on a substrate by plasma discharge of a reactive gas. The present invention relates to a semiconductor device manufacturing apparatus characterized by this structure, and a semiconductor device manufactured by the semiconductor device manufacturing apparatus.

  Conventionally, as a semiconductor element manufacturing apparatus, there is a plasma reaction apparatus that improves the uniformity of etching or film formation in plasma chemistry technology (see, for example, Patent Document 1).

US Pat. No. 4,264,393 (columns 2-6, FIGS. 1 and 2)

  As a conventional general semiconductor element manufacturing apparatus, a vertical type as shown in FIG. 4 is known.

  In this semiconductor element manufacturing apparatus, the cathode 2, the anode 4 and the substrate heating heater 14 are fixed as a structure on the wall surface of the chamber affected by the external atmospheric pressure. The cathode 2 and the anode 4 are for causing plasma discharge, and are also used as chamber walls.

  Between the structure and the cathode 2, a structure made of an insulator is provided in an intervening manner. And by this structure, the cathode 2 and the anode 4 are supported by the wall surface of the chamber.

  Around the plasma discharge region formed between the cathode 2 and the anode 4, an exhaust port is provided in the direction of one side. A cooling unit 14 is provided in the lower part of the cathode 2 and the wall surface of the chamber. The glass substrate 1 which is a to-be-processed object is fixed to a holder, and this holder is installed around the chamber wall surface.

  Further, when an etching gas is used as the reactive gas, the entire chamber is made of an aluminum alloy, and Kalretz or the like is added to the vacuum seal portion of the cathode 2 or the heater 24 that is affected by reactive radicals. Seal with fluorine rubber sealant.

  Such a semiconductor element manufacturing apparatus will be described more specifically. That is, there is a chamber as a reaction vessel, and the anode 4 is disposed in the chamber. The anode 4 is in contact with a heater 24 that heats the glass substrate 1, which is an object to be processed, to a certain temperature, for example, 100 ° C. to 600 ° C.

  Stainless steel or aluminum alloy is used for the chamber and the anode 4, and ceramics or the like is used as a heat insulating material. Further, a cathode 2 is disposed so as to face the substrate 1, and this cathode 2 is supported by a cathode support 5 made of an insulator in order to obtain electrical insulation.

  Here, in order to obtain a film having a uniform film thickness and film quality, it is necessary to set the gap distance between the cathode 2 and the anode 4 with high accuracy. For this reason, the peripheral part of the cathode 2 is fixed at fixed intervals by a fixing screw.

  The cathode 2 is made of stainless steel or aluminum alloy. In addition, a large number of minute through holes are drilled on the surface of the cathode 2 facing the substrate 1. Through these through holes, the reactive gas supplied from the reactive gas introduction pipe 10 can be supplied uniformly to the surface of the substrate 1.

  In the case of such a vertical type semiconductor device manufacturing apparatus, the substrate 1 is held in a fixed shape by the substrate holding unit 15 and arranged on the surface of the anode 4. A cooling unit 14 is disposed outside the heater 24 in order to suppress a temperature rise in the chamber and the vacuum seal unit. This is because a rubber seal material such as Viton or Kalrez is used for the vacuum seal portion, and thus cooling needs to be performed particularly sufficiently.

  In order to freely control the pressure of the reactive gas in the chamber, a discharge space exhaust pipe 9, a pressure controller 22 and a vacuum pump 21 are provided. The vacuum pump 21 is connected to a detoxifying device 23 for removing harmful substances in the exhaust gas. Further, in order to supply high-frequency power to the cathode 2, a plasma excitation power source 12 that is a high-frequency power source and an impedance matching unit 13 are provided.

  In such a configuration, glow discharge is generated between the cathode 2 and the anode 4 while the pressure of the reactive gas is controlled, and an amorphous film or a crystalline film is formed on the substrate 1. .

  The conventional semiconductor element manufacturing apparatus as described above has some problems as follows.

  Since the cathode 2, the anode 4 and the substrate heating heater 24 are fixed to the wall surface of the chamber, heat conduction to the outside increases, and a grounding and a cooling device (cooling unit 14) for the seal unit are required. In addition, the cathode 2 and the anode 4 are used for the wall of the chamber affected by the external atmospheric pressure even though they themselves require high insulation, so that they have a large structure and expensive parts. Furthermore, it is necessary to cool by the cooling unit 14 from the back side. Since the heater 24 is also connected to the wall surface of the chamber, it is necessary to cool the connection portion.

  Although the cathode 2 and the anode 4 are supported on the wall surface of the chamber via a structure made of an insulator, it is difficult to secure a grounding distance such as the wall surface for power introduction. It is easy to be affected. In order to minimize this effect, it is necessary to keep the chamber wall surface as far as possible from the cathode 2, but this directly leads to an increase in the size of the chamber, which causes a significant cost increase. .

  In addition, the cathode 2 which is a large structure must not only ensure electrical insulation with the chamber wall surface, but also prevent leakage of reactive gas. This leads to increased costs.

  Furthermore, when a fluorine-based etching gas is used as the reactive gas, a rubber seal material such as Viton or Kalrez is used for the vacuum seal portion, but fluorine radicals are used for the seal portions of the cathode 2 and the anode 4 near the plasma discharge region. Because of the inevitable effect of this, you must use expensive Kalrez.

  In addition, since the exhaust port is provided only in the direction of one side around the plasma discharge region, the conductance of the reactive gas is reduced, and a large amount of gas replacement is difficult.

  Furthermore, since electric power is introduced from the back side, the plasma discharge region is limited to one surface of the front side. In addition, in the case of installing a vertical type substrate, there is a problem that grounding becomes insufficient because the substrate 1 is fixed around.

  The present invention has been made in view of such circumstances, and the object thereof is to arrange a cathode and an anode with a simple structure and to obtain good film deposition and film thickness distribution. Furthermore, it is not necessary to provide a cooling device, and it is possible to provide a semiconductor device manufacturing apparatus capable of realizing the simplification of the overall structure of the device and hence the cost reduction, and a semiconductor device manufacturing method manufactured by the device. There is.

  According to one aspect of the present invention, a sealable chamber, a semiconductor element substrate which is provided in the chamber and is isolated from the wall surface of the chamber, is attached to the chamber via a holding leg, and is an object to be processed A frame-like internal structure in which an inner space is formed, reactive gas supply means for supplying a reactive gas to the inner space, a cathode and an anode for plasma discharge of the reactive gas, and a semiconductor element substrate There is provided a semiconductor element manufacturing apparatus including a heater for heating, and the cathode, anode and heater supported by an internal structure.

In such a semiconductor element manufacturing apparatus, since the cathode and the anode are supported by the internal structure so as to be isolated from the wall surface of the chamber, the strength against the atmospheric pressure is not required and can be simplified. Further, since the heater is isolated from the chamber wall surface, heat conduction to the outside is suppressed, and a cooling device for cooling the wall surface can be omitted. Further, in the chamber, there is an internal structure that supports the cathode, the anode, and the heater for heating the substrate around the discharge space, but there is nothing else that blocks the flow path of the reactive gas. Since the gas conductance increases, a large amount of gas can be replaced.
Also in the stability of the discharge plasma, a sufficient distance between the grounding portion such as the outer wall and the cathode electrode can be secured, so that it is less affected by potentials other than the anode electrode, and the plasma stability is improved.
Moreover, since the chamber wall and the discharge space can be separated, there is no need to consider the corrosion resistance of vacuum parts such as O-rings used for vacuum sealing even when using a corrosive gas such as fluorine. General-purpose products such as Viton can be used.

  Therefore, according to the semiconductor element manufacturing apparatus according to the present invention, the cathode and the anode can be arranged with a simple structure, good film deposition and film thickness distribution can be obtained, and further, it is not necessary to provide a cooling device. In addition, simplification of the overall structure of the apparatus, and hence cost reduction, can be realized.

  In the semiconductor element manufacturing apparatus according to the present invention, it is preferable that the internal structure is constituted by a prismatic framework. In the case of such a configuration, the flat side surface of the prismatic frame can be used to facilitate the assembly of the flat cathode and anode to the internal structure.

  The internal structure is attached to the chamber via holding legs. Therefore, heat conduction between the internal structure and the wall surface of the chamber can be reduced. Moreover, since the internal structure is disposed separately from the wall surface of the chamber, the conductance of the reactive gas is increased, and a large amount of gas replacement is possible.

  The internal structure preferably supports the cathode via an insulator. In such a case, since it becomes possible to suppress the influence of the chamber wall surface and the like on the cathode when power is introduced, the discharge space can be easily controlled.

  The internal structure preferably supports the heater via an insulator. In such a case, it is possible not only to suppress the influence of the chamber wall surface and the like on the heater when power is introduced, but also to control the potential of the anode, thereby facilitating the control of the discharge space.

  These insulators are preferably glass, alumina or zirconia. In such a case, desired insulation can be ensured with a material that is easily available and relatively inexpensive.

  The cathode is preferably configured to receive power from a surface other than both the front and back surfaces, that is, an end surface or a side surface that is a thickness forming surface. In the case of such a configuration, by introducing power from a surface other than both the front and back surfaces, the discharge on both the front and back surfaces can be used more effectively.

The semiconductor element manufacturing apparatus according to the present invention is preferably configured such that one anode is disposed on both the front and back surfaces of one cathode, and plasma discharge is performed on both surfaces of the cathode. In the case of such a configuration, two plasma discharges are possible for one cathode, so that a semiconductor element can be manufactured with higher processing efficiency, and the entire apparatus can be miniaturized. be able to.
Of course, the processing efficiency can be improved by installing a plurality of such structures in the same chamber.

  The semiconductor device manufacturing apparatus according to the present invention preferably further includes means for reducing the pressure of the gap between the electrodes in the internal structure. In such a case, since the pressure of the gap in the anode becomes smaller than the pressure between the electrodes in the internal structure by the decompression means, the substrate can be placed on the surface of the anode by using this pressure difference. It becomes easy and the support mechanism for supporting the substrate can be simplified.

  Specifically, it is preferable that the inner space of the internal structure is maintained at a pressure of 1 to 100 Torr, that is, 1/760 to 100/760 atm by such a decompression unit. This is because, in order to place the substrate on the surface of the anode using the pressure difference, it has been proved by experiments that it is appropriate to set the pressure in the inner space of the internal structure within this range.

  When the substrate is placed on the surface of the anode using the pressure difference, the anode is preferably composed of a heater having a large number of through holes. When the anode configured in this way is used, the substrate can be more easily installed on the surface of the anode by a large number of through holes.

  It is preferable that the substrate is held by the anode due to a pressure difference between the inside of the internal structure and the gap in the anode. When configured in this way, the substrate can be more easily placed on the surface of the anode by means of a large number of through holes.

  The semiconductor element manufacturing apparatus according to the present invention is preferably provided with one cathode corresponding to two anodes. In the case where the anode and the cathode are provided in the manner as described above, compared to a semiconductor element manufacturing apparatus including a pair of anode / cathode pairs in which one cathode is provided corresponding to one anode, Since it is possible to perform a predetermined process on a larger number of substrates in a shorter time, manufacturing efficiency can be improved.

The semiconductor element manufacturing apparatus according to the present invention may generate plasma of fluorine-based etching gas. Since the operation rate of the apparatus can be increased by generating plasma with a widely used fluorine-based etching gas such as SF ₆ and NF ₃ , it is possible to easily manufacture a desired semiconductor element at a low cost. Become.

  According to another aspect of the present invention, there is provided a semiconductor element manufacturing method by a semiconductor element manufacturing apparatus according to one aspect of the present invention. According to such a semiconductor element manufacturing method, semiconductor elements such as solar cells, TFTs, and photoreceptors using a semiconductor thin film or an optical thin film can be obtained at low cost and efficiently.

  In the semiconductor device manufacturing apparatus according to one aspect of the present invention, the cathode and the anode are supported by the internal structure so as to be isolated from the wall surface of the chamber. can do. Further, since the heater is isolated from the chamber wall surface, heat conduction to the outside is suppressed, and a cooling device for cooling the wall surface can be omitted. Therefore, according to the semiconductor element manufacturing apparatus according to the present invention, the cathode and the anode can be arranged with a simple structure, good film deposition and film thickness distribution can be obtained, and further, it is not necessary to provide a cooling device. In addition, simplification of the overall structure of the apparatus, and hence cost reduction, can be realized.

  According to the semiconductor element manufacturing method according to another aspect of the present invention, semiconductor elements such as solar cells, TFTs, and photoconductors using a semiconductor thin film or an optical thin film can be obtained at low cost and efficiently.

  Hereinafter, the present invention will be described in detail based on three embodiments shown in the drawings. Note that the present invention is not limited to these embodiments.

Embodiment 1
FIG. 1 is a schematic longitudinal sectional view of the semiconductor element manufacturing apparatus according to the first embodiment.

The chamber 11 is made of stainless steel or aluminum alloy. The fitting portion of the chamber 11 is completely sealed with an O-ring or the like. An exhaust pipe 9, a pressure controller 22, and a vacuum pump 21 are connected to the chamber 11, and the inside of the chamber 11 can be controlled to an arbitrary degree of vacuum. The vacuum pump 21 is connected to a detoxifying device 23 for removing harmful substances contained in the exhaust gas after the reactive gas introduced into the chamber 11 has reacted.
An electrical holding leg 25 sufficient to support the weight of the structure to be held is connected to the chamber 11, and the internal structure 8 is connected to the holding leg 25. The purpose of the holding legs 25 is to spatially isolate the internal structure 8 in order to suppress heat conduction to the chamber 11, and the length is preferably as long as possible and the installation area as small as possible. The electrical holding leg 25 is connected to the bottom surface of the chamber 11 here, but the connecting portion may be the side surface or top surface of the chamber 11 and is not particularly limited.
The internal structure is a structure having a strength capable of holding components such as a cathode, an anode, and a heater, and is preferably a frame-shaped structure such as a square member in consideration of the replacement efficiency of the gas introduced into the interior. However, the structure is not limited to this structure as long as it has both strength capable of holding components such as a cathode, an anode, and a heater and easy gas replacement.

  The anode 4 is made of a material having conductivity and heat resistance, such as stainless steel, aluminum alloy, and carbon. The dimension of the anode 4 is determined to an appropriate value in accordance with the dimension of the glass substrate 1 for forming the thin film. Here, the dimensions of the anode 4 are designed to be 1000 to 1500 mm × 600 to 1000 mm with respect to the dimensions of the substrate 1 of 900 to 1200 mm × 400 to 900 mm.

  The anode 4 includes a heater 24, and the anode 4 is controlled to be heated to room temperature to 300 ° C. by the heater 24. Here, the anode 4 uses an aluminum alloy in which a sealed heating device such as a sheath heater and a sealed temperature sensor such as a thermocouple are incorporated, and is controlled to be heated between room temperature and 300 ° C.

  Between the bottom surface of the internal structure 8 and the lower surface of the anode 4, a gap with a certain size is provided in order to suppress the heat rise of the internal structure 8 due to radiant heat from the anode 4. This gap was set to 10 mm to 30 mm here.

  The material of the anode support 6 is preferably a material with low thermal conductivity in order to suppress the heat rise of the internal structure 8 due to the heat conduction of the anode support 6, and zirconia (zirconium oxide) is used here.

Furthermore, it is desirable that the contact area between the anode 4 and the anode support 6 be as small as possible in order to prevent the heat of the anode 4 from being transferred to the internal structure 8 due to the heat conduction of the anode support 6. Here, the anode support 6 is configured to support the four corners of the anode 4, and the support dimension is set to 30 mm × 50 mm. However, the support form and the support dimension are determined so that the anode 4 is not likely to bend. .

Further, in order to prevent the heat of the anode 4 from being transferred to the internal structure 8 due to the heat conduction of the anode support 6, the contact portion between the anode support 6 and the anode 4 has a depth of 1 mm to 5 mm. There are several digs. Thereby, the contact area is reduced without impairing the strength of the support 6.

The anode 4 is supported by anode supports 6 arranged at the four corners thereof.

When the anode 4 needs to be electrically grounded, the anode 4 is connected to the chamber 11 by a ground wire. Here, the grounding wires were attached to the four corners of the anode 4 using aluminum plates having a width of 10 mm to 35 mm and a thickness of 0.5 mm to 3 mm. In addition, what is necessary is just to connect DC power supply directly to the anode 4 when controlling the electric potential of the anode 4.

The cathode 2 is made of stainless steel or aluminum alloy. Here, an aluminum alloy was used. The dimension of the cathode 2 is set to an appropriate value in accordance with the dimension of the substrate 1 on which the film is formed, and here, it is designed to be 1000 to 1500 mm × 600 to 1000 mm.

The inside of the cathode 2 is hollow. A reactive gas is introduced into the cavity through the reactive gas introduction pipe 10. Here, SiH ₄ gas diluted with H ₂ was used as the reactive gas.

A large number of through holes for supplying reactive gas onto the substrate 1 are formed on the surface of the cathode 2 by drilling. In this drilling process, it is desirable to perform holes with a diameter of 0.1 mm to 2 mm at a pitch of several mm to several cm.

The cathode 2 is installed on the cathode support 5 so as to face the anode 4. Since the cathode support 5 is required to have electrical insulation and needs to have sufficient strength to hold the cathode 2, a material such as ceramics is used. Here, zirconia, alumina (aluminum oxide) or glass was used.

The distance between the cathode 2 and the anode 4 is preferably several mm to several tens mm, and is set to 2 mm to 30 mm here. The distance accuracy is preferably within a few percent, and here it has been confirmed to be 1% or less.

Although the cathode support 5 is disposed at the four corners of the cathode 2, it may be disposed at the entire periphery of the cathode 2.

Although the dimension of the location where the cathode support 5 and the cathode 2 are in contact with each other is 100 mm × 50 mm here, it is generally configured in such a dimension and arrangement that the cathode 2 does not bend.

The cathode support 5 is attached to an internal structure 8 of a quadrangular columnar frame provided in the chamber 11.

Electric power is supplied to the cathode 2 by electrically connecting the plasma excitation power source 12 via the impedance matching unit 13. The plasma excitation power source 12 uses power of 10 W to 100 kW at a frequency of AC 1.00 MHz to 108.48 MHz. Here, 10 W to 10 kW was used at 13.56 MHz to 54.24 MHz.

In the semiconductor device manufacturing apparatus configured as described above, the reactive gas is filled in the gap between the cathode 2 and the anode 4 at a predetermined flow rate and pressure, and high frequency power is applied to the cathode 2 and the anode 4. A glow discharge region (plasma discharge region) was generated between the cathode 2 and the anode 4. Then, an amorphous film or a crystalline film could be formed on the substrate 1.

More specifically, using a SiH ₄ gas diluted with H ₂ as a reactive gas and setting the film formation time to 10 minutes, a silicon thin film having a film thickness of 300 nm is deposited within a film thickness distribution of ± 10%. I was able to.

According to the semiconductor element manufacturing apparatus according to the first embodiment configured as described above, the cathode 2 and the anode 4 can be arranged with a simple structure as compared with the conventional one, and good film deposition and film thickness distribution can be obtained. It becomes possible. In addition, since the cathode 2 and the anode 4 can be arranged in the internal structure, it is not necessary to provide a cooling device, and the device structure can be simplified and the cost can be reduced.
According to the semiconductor element manufacturing method by the semiconductor element manufacturing apparatus according to the first embodiment, it is possible to efficiently obtain a semiconductor element such as a solar cell, a TFT, or a photoreceptor using a semiconductor thin film or an optical thin film at low cost. it can.

Embodiment 2
FIG. 2 is a schematic longitudinal sectional view of the semiconductor element manufacturing apparatus according to the second embodiment.

In this semiconductor element manufacturing apparatus, the same chamber 11 as in the first embodiment is used, and anodes 4 are arranged on both sides of one cathode 2 inside the chamber 11. At this time, the power is supplied from a surface other than both the front and back surfaces of the cathode 2, that is, an end surface or a side surface that is a thickness forming surface. Since this semiconductor element manufacturing apparatus is insulated from the wall surface, the potential control of the anode 4 can be easily controlled. In this case, a plurality of substrates 1 can be formed.

According to the semiconductor element manufacturing apparatus according to the second embodiment configured as described above, the semiconductor element manufacturing apparatus according to the first embodiment can not only achieve the same effect as the above-described effect but also has a processing capability. Improvements can be made.

Embodiment 3
FIG. 3 is a schematic longitudinal sectional view of the semiconductor element manufacturing apparatus according to the third embodiment.

  In this semiconductor element manufacturing apparatus, the anode 3 has a box structure having a heater 27 having a large number of through holes 28 and gaps, as shown in FIG. The heater 27 is also built in the anode 3. In addition, an exhaust / inert gas introduction pipe 7 is provided in the gap in the anode 3, and a mechanism for satisfactorily grounding / removing the substrate 1 to / from the anode 3 is provided by exhausting / introducing gas through the pipe 7. It has been.

  However, since this mechanism uses a pressure difference for holding the substrate 1, film formation with a pressure difference of 0.1 Torr or more is suitable. Here, exhaust ports are provided in two systems of the anode inner pipe 7 and the discharge space exhaust pipe 9, and the differential pressure is utilized. At this time, the deposition pressure, the density (distribution degree) of the through holes 28 on the anode 3, the shape and size thereof can be arbitrarily set according to the weight of the substrate 1 to be held.

In this semiconductor element manufacturing apparatus, the film forming pressure is set to 1 Torr, the density (distribution) of the through holes is set to 1 piece / cm ² , and the shape and size of the through holes are set to circular and 1 mmφ, so A 7 mm glass substrate 1 is held.

In the semiconductor element manufacturing apparatus according to the third embodiment configured as described above, the glass surface of the substrate 1 is installed with respect to the anode 3 with a uniform force. This greatly contributes to the improvement of film thickness distribution. Further, since the substrate holding part 15 that causes non-uniform discharge is not necessary and can be removed, the uniformity of discharge is improved.
On the contrary, when the chamber is set to a low pressure and the inside of the anode is pressurized by introducing the inert gas 26 through the pipe 7 as compared with the inside of the chamber, the substrate 1 is lifted from the cathode surface, and the substrate 1 can be easily attached and detached. Can be done.

  Other effects of the semiconductor element manufacturing apparatus according to the third embodiment are the same as the effects achieved by the semiconductor element manufacturing apparatus according to the first embodiment.

  In addition, in the semiconductor element manufacturing apparatus according to the first to third embodiments, the configuration in which the substrate 1 that is the object to be processed is installed in the vertical direction and the cathode 2 is installed in parallel to the substrate 1 is used. Such an arrangement is not the essence of the present invention, but can be changed depending on the situation. For example, there is no problem even if the substrate is disposed horizontally, and there is no problem if the substrate is disposed on the cathode.

1 is a schematic longitudinal sectional view of a semiconductor element manufacturing apparatus according to Embodiment 1 of the present invention. FIG. 2 is a schematic longitudinal sectional view of a semiconductor element manufacturing apparatus according to Embodiment 2 of the present invention. FIG. 3 is a schematic longitudinal sectional view of a semiconductor element manufacturing apparatus according to Embodiment 3 of the present invention. FIG. 4 is a schematic longitudinal sectional view of a conventional semiconductor device manufacturing apparatus. FIG. 5 is a schematic longitudinal sectional view of the cathode 3 (box structure) of the semiconductor element manufacturing apparatus according to Embodiment 3 of the present invention.

Explanation of symbols

1 substrate 2 cathode (shower plate)
3 Anode (box structure, built-in heater)
4 Anode 5 Cathode support 6 Anode support 7 Anode exhaust / gas introduction tube 8 Internal structure 9 Discharge space exhaust tube 10 Gas introduction tube 11 Chamber 12 Plasma excitation power supply 13 Impedance matching device 14 Water cooling unit 15 Substrate holding unit 21 Vacuum pump 22 Pressure controller 23 Detoxifying device 24 Heater 25 Holding leg 26 Inert gas cylinder 27 Heater wire 28 Anode through hole

Claims (10)

A sealable chamber and a frame that is provided in the chamber so as to be isolated from the wall surface of the chamber, is attached to the chamber via a holding leg, and has an inner space for accommodating a semiconductor element substrate that is an object to be processed And a reactive gas supply means for supplying a reactive gas to the inner space, a cathode and an anode for plasma discharging the reactive gas, and a heater for heating the semiconductor element substrate. The cathode, anode, and heater are supported by an internal structure. 2. The semiconductor element manufacturing apparatus according to claim 1, wherein the internal structure is constituted by a prismatic frame. 2. The semiconductor device manufacturing apparatus according to claim 1, wherein the internal structure supports the cathode via an insulator. The semiconductor element manufacturing apparatus according to claim 1, wherein the internal structure supports the heater via an insulator. The semiconductor element manufacturing apparatus according to claim 3 or 4, wherein the insulator is glass, alumina, or zirconia. The semiconductor element manufacturing apparatus according to claim 1, wherein the cathode is configured to receive power supply from a surface other than both the front and back surfaces. 7. The semiconductor element manufacturing apparatus according to claim 6, wherein one anode is disposed so as to face both the front and back surfaces of one cathode, and plasma discharge is performed on both surfaces of the cathode. 2. The semiconductor element manufacturing apparatus according to claim 1, wherein one cathode is provided corresponding to two anodes. A frame-like internal structure provided with a sealable chamber and a holding leg for isolating it from the wall surface of the chamber in the chamber, and having an inner space for accommodating a semiconductor element substrate as an object to be processed A reactive gas supply means for supplying a reactive gas to the inner space, a cathode and an anode for plasma discharge of the reactive gas, and a heater for heating the semiconductor element substrate. And the heater is supported by the internal structure, whereby heat conduction from the heater to the chamber is suppressed . The semiconductor element manufacturing method by the semiconductor element manufacturing apparatus as described in any one of Claims 1-9.

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