WO2008099789A1 - Electrostatic chuck - Google Patents

Electrostatic chuck Download PDF

Info

Publication number
WO2008099789A1
WO2008099789A1 PCT/JP2008/052199 JP2008052199W WO2008099789A1 WO 2008099789 A1 WO2008099789 A1 WO 2008099789A1 JP 2008052199 W JP2008052199 W JP 2008052199W WO 2008099789 A1 WO2008099789 A1 WO 2008099789A1
Authority
WO
WIPO (PCT)
Prior art keywords
insulator
electrostatic chuck
substrate
dielectric layer
ventilation hole
Prior art date
Application number
PCT/JP2008/052199
Other languages
French (fr)
Japanese (ja)
Inventor
Kinya Miyashita
Hiroshi Fujisawa
Original Assignee
Creative Technology Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Creative Technology Corporation filed Critical Creative Technology Corporation
Priority to JP2008558079A priority Critical patent/JP5087561B2/en
Publication of WO2008099789A1 publication Critical patent/WO2008099789A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

Provided is an electrostatic chuck which prevents abnormal discharge generated in a dielectric layer or substrate and has a structure suitable for reusing. An electrostatic chuck (1) is provided with a substrate (2), a suction electrode (3), and a dielectric layer (4). Ring-like gas channels (21, 22) are arranged on the substrate (2) as recesses. Supporting members (5-1, 5-2) which support an insulator (6) are fitted in the gas channels (21, 22). Inside a long groove (8) formed on the supporting members (5-1 (5-2)) is filled with the insulator (6). The insulator (6) is composed of a porous ceramic, forms a ring-like strip corresponding to the gas channel (21 (22)) as a whole, and the width of the upper surface is set larger than the diameter of a ventilation hole (41) of the dielectric layer (4). A lower opening of the ventilation hole (41) abuts to the upper surface of the insulator (6), and the ventilation hole (41) communicates with the gas channel (21 (22)) through the insulator (6). Preferably, a notch (51a) is arranged on the supporting member (5-1 (5-2)).
PCT/JP2008/052199 2007-02-15 2008-02-08 Electrostatic chuck WO2008099789A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008558079A JP5087561B2 (en) 2007-02-15 2008-02-08 Electrostatic chuck

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-034359 2007-02-15
JP2007034359 2007-02-15

Publications (1)

Publication Number Publication Date
WO2008099789A1 true WO2008099789A1 (en) 2008-08-21

Family

ID=39690022

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052199 WO2008099789A1 (en) 2007-02-15 2008-02-08 Electrostatic chuck

Country Status (2)

Country Link
JP (1) JP5087561B2 (en)
WO (1) WO2008099789A1 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010123712A (en) * 2008-11-19 2010-06-03 Nihon Ceratec Co Ltd Electrostatic chuck and method of manufacturing the same
JP2013232641A (en) * 2012-04-27 2013-11-14 Ngk Insulators Ltd Member for semiconductor manufacturing device
WO2014157571A1 (en) * 2013-03-29 2014-10-02 Toto株式会社 Electrostatic chuck
TWI553774B (en) * 2015-04-21 2016-10-11 Toto Ltd Electrostatic sucker and wafer handling device
JP2018101773A (en) * 2016-12-16 2018-06-28 日本特殊陶業株式会社 Retainer
JP2018518060A (en) * 2015-05-01 2018-07-05 コンポーネント リ−エンジニアリング カンパニー インコーポレイテッド Method for repairing equipment parts used in semiconductor processing
CN112687602A (en) * 2019-10-18 2021-04-20 中微半导体设备(上海)股份有限公司 Electrostatic chuck, manufacturing method thereof and plasma processing device
CN113752094A (en) * 2021-08-25 2021-12-07 杭州大和江东新材料科技有限公司 Semiconductor insulating ring processing method
US11222804B2 (en) 2015-11-02 2022-01-11 Watlow Electric Manufacturing Company Electrostatic chuck for clamping in high temperature semiconductor processing and method of making same

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06182645A (en) * 1992-12-17 1994-07-05 Tokyo Electron Ltd Electrostatic chuck
JPH06244119A (en) * 1993-02-20 1994-09-02 Tokyo Electron Ltd Plasma process equipment
JPH1131680A (en) * 1997-07-10 1999-02-02 Matsushita Electric Ind Co Ltd Substrate dry etching device
JPH11238596A (en) * 1998-02-23 1999-08-31 Matsushita Electron Corp Plasma processing device
JPH11330215A (en) * 1998-05-20 1999-11-30 Matsushita Electric Ind Co Ltd Method and device for controlling temperature of substrate
WO2003046969A1 (en) * 2001-11-30 2003-06-05 Tokyo Electron Limited Processing device, and gas discharge suppressing member
JP2003338492A (en) * 2002-05-21 2003-11-28 Tokyo Electron Ltd Plasma processing system
JP2006344766A (en) * 2005-06-09 2006-12-21 Matsushita Electric Ind Co Ltd Plasma treatment apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5720818A (en) * 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
JP2004006505A (en) * 2002-05-31 2004-01-08 Ngk Spark Plug Co Ltd Electrostatic chuck
JP4413667B2 (en) * 2004-03-19 2010-02-10 日本特殊陶業株式会社 Electrostatic chuck

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06182645A (en) * 1992-12-17 1994-07-05 Tokyo Electron Ltd Electrostatic chuck
JPH06244119A (en) * 1993-02-20 1994-09-02 Tokyo Electron Ltd Plasma process equipment
JPH1131680A (en) * 1997-07-10 1999-02-02 Matsushita Electric Ind Co Ltd Substrate dry etching device
JPH11238596A (en) * 1998-02-23 1999-08-31 Matsushita Electron Corp Plasma processing device
JPH11330215A (en) * 1998-05-20 1999-11-30 Matsushita Electric Ind Co Ltd Method and device for controlling temperature of substrate
WO2003046969A1 (en) * 2001-11-30 2003-06-05 Tokyo Electron Limited Processing device, and gas discharge suppressing member
JP2003338492A (en) * 2002-05-21 2003-11-28 Tokyo Electron Ltd Plasma processing system
JP2006344766A (en) * 2005-06-09 2006-12-21 Matsushita Electric Ind Co Ltd Plasma treatment apparatus

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010123712A (en) * 2008-11-19 2010-06-03 Nihon Ceratec Co Ltd Electrostatic chuck and method of manufacturing the same
JP2013232641A (en) * 2012-04-27 2013-11-14 Ngk Insulators Ltd Member for semiconductor manufacturing device
WO2014157571A1 (en) * 2013-03-29 2014-10-02 Toto株式会社 Electrostatic chuck
JP2014209615A (en) * 2013-03-29 2014-11-06 Toto株式会社 Electrostatic chuck
US9960067B2 (en) 2013-03-29 2018-05-01 Toto Ltd. Electrostatic chuck
TWI553774B (en) * 2015-04-21 2016-10-11 Toto Ltd Electrostatic sucker and wafer handling device
JP2018518060A (en) * 2015-05-01 2018-07-05 コンポーネント リ−エンジニアリング カンパニー インコーポレイテッド Method for repairing equipment parts used in semiconductor processing
US11222804B2 (en) 2015-11-02 2022-01-11 Watlow Electric Manufacturing Company Electrostatic chuck for clamping in high temperature semiconductor processing and method of making same
JP2018101773A (en) * 2016-12-16 2018-06-28 日本特殊陶業株式会社 Retainer
CN112687602A (en) * 2019-10-18 2021-04-20 中微半导体设备(上海)股份有限公司 Electrostatic chuck, manufacturing method thereof and plasma processing device
CN113752094A (en) * 2021-08-25 2021-12-07 杭州大和江东新材料科技有限公司 Semiconductor insulating ring processing method

Also Published As

Publication number Publication date
JPWO2008099789A1 (en) 2010-05-27
JP5087561B2 (en) 2012-12-05

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