JPH11233713A - Semiconductor device, and method and equipment for manufacturing it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To mount a MCM(multichip module) without lowering the yield in mounting by supplying a conductive adhesive of such quantity as to correspond to the electrode pitch of a semiconductor element. SOLUTION: This semiconductor device is equipped with a semiconductor carrier 4 which consists of an insulating substrate having a plurality of electrodes at the topside and an external electrode at the bottom, a plurality of semiconductor elements 1... where peripheral electrodes 5 are joined by a conductive adhesive 8 with the plural electrodes 6 at the topside of this semiconductor carrier 4, and sealing resin 9 which fills up and covers the space made between the semiconductor element 1 and the semiconductor carrier 4 and the peripheral end of the semiconductor element 1, and the quantity of the conductive adhesive 8 varies with the electrode pitches of the semiconductor elements 1 mounted. Hereby, the conductive adhesive 8 of enough quantity to eliminate the warp, etc., of the semiconductor carrier 4 can be secured for the semiconductor elements at large pitches, so the yield in mounting can be raised, consequently the yield in mounting of MCM at large can be raised.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device multi-layer device which protects an integrated circuit portion of a semiconductor device, stably secures an electrical connection between an external device and the semiconductor device, and enables the highest density mounting. Chip module (MC
M), and more particularly to a semiconductor device using an Au bump and a conductive adhesive for connection between a semiconductor element and a carrier, and a method and apparatus for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, as one of means for mounting semiconductor devices at a high density, a study has been made on a method in which a plurality of semiconductor elements are mounted on one carrier to form one device (MCM). Hereinafter, a conventional method of manufacturing an MCM using an Au bump and a conductive adhesive will be described with reference to the drawings. FIG. 8 is a cross-sectional view showing connection between a semiconductor element electrode and a carrier electrode of an MCM using a conventional Au bump and a conductive adhesive, and FIG. 9 is a plan view thereof.

As shown in the figure, a plurality of different semiconductor elements 27, 28, 29 are mounted on the same carrier 30, but the same amount of the conductive elements irrespective of the electrode pitch of the mounted semiconductor elements 27, 28, 29. The Au bump 32 and the carrier electrode 33 are connected by the adhesive 31. In addition, a sealing resin 34 exists in gaps between the semiconductor elements 27, 28, 29 and the carrier 30 and around the semiconductor elements 27, 28, 29. In this case, in order to prevent a short circuit between the adjacent elements, the conductive adhesive 3 of all the mounted semiconductor elements 27, 28, 29 is used.
The amount of 1 is determined by the semiconductor element having the narrowest electrode pitch among the semiconductor elements 27, 28, and 29 to be mounted. In addition, in the flip chip method using a conductive adhesive, in general, the smaller the amount of the conductive adhesive, the more difficult it is to absorb the warp and undulation of the carrier, and thus the mounting yield tends to be low.

Next, a conventional method of manufacturing an MCM using an Au bump and a conductive adhesive will be described with reference to the drawings. 10 and 11 are cross-sectional views showing a conventional MCM manufacturing method for each process. First, as shown in FIG. 10, the Au bump 32 is formed on the electrode 35 of the semiconductor element 27 (FIG. 10A). Next, a film 37 of a conductive adhesive having a smooth surface with a constant thickness is formed on the transfer dish 36 having a flat and smooth surface (FIG. 10B). The Au bump 32 of the semiconductor element 27 is immersed face down in the conductive adhesive film 37, and the conductive adhesive 38 is transferred to the Au bump 32 (FIGS. 10C and 10D). Next, A
The semiconductor element 27 having the conductive adhesive 38 transferred to the u-bump 32 is mounted on the carrier 30 on which the semiconductor element 27 is to be mounted (FIG. 10E). Further, as shown in FIG. 11, the remaining plurality of semiconductor elements 28 and 29 are shown in FIG.
(A) to (e) are repeated, a plurality of semiconductor elements 27, 28, and 29 are mounted on one carrier 30, and the conductive adhesive 38 is cured in an oven or the like (FIG. 11).
(F)). At this time, the plurality of semiconductor elements 27 and 2 mounted
8 and 29 are mounted using one mounting machine having one transfer unit, and thus the conductive adhesive 38 to be transferred is used.
Is the same for all the semiconductor elements 27, 28 and 29. Next, an insulating resin 34 is poured into gaps between the semiconductor elements 27, 28, and 29 and the carrier 30 and peripheral portions of the semiconductor elements 27, 28, and 29 and thermally cured (FIG. 11).
(G)).

Next, formation of a conventional conductive adhesive film for performing transfer will be described. FIG. 12 is a simple schematic diagram for explaining a conventional transfer unit. (A) is a plan view, and (b) is a cross-sectional view when (a) is cut along GH. A transfer tray 39 having a flat and smooth surface, a blade 40 for adjusting the film thickness, a scraping blade 41 for once destroying the smoothness of the film surface, and a collecting blade 42 for collecting the conductive adhesive displaced to the surroundings By controlling the height of the blade 40, a conductive adhesive film 44 having a required thickness is formed. In this case, unless the height of the blade 40 is changed every rotation, the conductive adhesive film 44 having a different thickness cannot be formed.

[0006]

However, conventionally, the same transfer unit is used for transferring the conductive adhesive to all the mounted semiconductor elements.
Further, since the transfer film (conductive adhesive film) is formed with only one blade having a fixed height, the transfer unit has the same thickness for all mounted semiconductor elements. The transfer of the adhesive is performed. In this case, the amount of the conductive adhesive to be transferred is the same for all the mounted semiconductor elements, and the amount has to be adjusted to the semiconductor element having the narrowest electrode pitch. When a semiconductor element having a narrow pitch is included, it is necessary to limit the conductive adhesive to be transferred. Therefore, other semiconductor elements having a large pitch are to be produced with a small amount of transfer. The smaller the amount of the conductive adhesive, the more difficult it is to absorb the warpage and undulation of the carrier, so that there is a problem that the mounting yield is reduced.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to solve the above-mentioned conventional problems, by supplying an amount of a conductive adhesive corresponding to an electrode pitch of a semiconductor element, and reducing the mounting yield without reducing the mounting yield. An object of the present invention is to provide a semiconductor device that can be mounted, a manufacturing method thereof, and a manufacturing apparatus.

[0008]

According to a first aspect of the present invention, there is provided a semiconductor device comprising a semiconductor carrier comprising an insulating substrate having a plurality of electrodes on an upper surface and external electrodes on a lower surface. Filling the gap between the semiconductor element and the semiconductor carrier and the peripheral edge of the semiconductor element with the plurality of semiconductor elements in which the plurality of electrodes on the upper surface of the semiconductor carrier and the peripheral electrode are connected by a conductive adhesive; A semiconductor device comprising a sealing resin covering the semiconductor device, wherein the amount of the conductive adhesive varies depending on the electrode pitch of the semiconductor element to be mounted.

As described above, since the amount of the conductive adhesive varies depending on the electrode pitch of the semiconductor element to be mounted, a sufficient amount of conductive adhesive is required for the semiconductor element having a coarse pitch to absorb semiconductor warpage and the like. As a result, the mounting yield can be improved, and as a result, the mounting yield of the entire MCM can be improved.

According to a second aspect of the present invention, in the first aspect, the amount of the conductive adhesive is supplied corresponding to the minimum pitch of the element electrodes of the semiconductor element to be mounted. As described above, since the amount of the conductive adhesive is supplied corresponding to the minimum pitch of the device electrodes of the semiconductor element to be mounted, an optimal amount of the conductive adhesive can be secured in mounting the semiconductor element. .

According to a third aspect of the present invention, in the semiconductor device according to the first aspect, the amount of the conductive adhesive is smaller as the electrode pitch of the semiconductor element is smaller. As described above, since the amount of the conductive adhesive is smaller as the electrode pitch of the mounted semiconductor element is smaller, a short circuit between the adjacent elements can be prevented. In the method of manufacturing a semiconductor device according to the fourth aspect, a step of forming a bump on a peripheral electrode of a semiconductor element, a step of supplying a conductive adhesive to the bump, and a step of supplying the conductive adhesive on the semiconductor element are provided. A step of aligning and mounting the bumps and the corresponding electrodes on the upper surface of the semiconductor carrier, a step of curing the conductive adhesive, and a step of sealing the sealing resin between the semiconductor element and the semiconductor carrier and the peripheral portion thereof And a step of curing the sealing resin, wherein a plurality of conductive adhesive films having different thicknesses are formed when the conductive adhesive is supplied to the bumps. By immersing a part of the bump in the conductive adhesive film and transferring the conductive adhesive to the bump, a different amount of the conductive adhesive is supplied depending on the electrode pitch of the semiconductor element to be mounted. And

As described above, when supplying the conductive adhesive to the bump, a plurality of conductive adhesive films having different thicknesses are formed, and a part of the bump is immersed in the conductive adhesive film to form the bump. By transferring the conductive adhesive to the substrate, different amounts of the conductive adhesive are supplied depending on the electrode pitch of the semiconductor element to be mounted, so that the film thickness can be changed in the same transfer unit. Therefore, the amount of the conductive adhesive to be supplied can be adjusted according to the electrode pitch of the semiconductor element to be mounted by using the same equipment and process flow as before, and as a result, the entire MCM can be adjusted. Yield can be greatly improved.

According to a fifth aspect of the present invention, there is provided a method of manufacturing a semiconductor device.
In claim 4, by laminating the conductive adhesive on the transfer dish having a flat surface, and adjusting the film thickness with a plurality of blades arranged so that different gaps are formed with respect to the surface of the transfer dish, Films of conductive adhesive of different thickness are formed on the transfer dish. Thus, a plurality of conductive adhesive films having a thickness corresponding to the number of blades can be formed on one transfer plate.

According to a sixth aspect of the present invention, there is provided a method of manufacturing a semiconductor device.
In claim 4, the conductive adhesive is laminated on a transfer dish having a plurality of steps having a flat surface, and the thickness of the conductive adhesive is varied by adjusting the film thickness with one blade. Form on transfer dish. Thus, a conductive adhesive film having a plurality of thicknesses corresponding to the number of steps of the transfer plate can be formed on one transfer plate.

According to a seventh aspect of the present invention, in the semiconductor device manufacturing method according to the fourth aspect, a conductive adhesive is laminated on a transfer dish having a plurality of steps having a flat surface, and the film thickness is adjusted with a plurality of blades. Thereby, films of the conductive adhesive having different thicknesses are formed on the transfer dish. Thus, a plurality of conductive adhesive films having a plurality of thicknesses corresponding to the number of steps of the transfer plate can be formed on one transfer plate, and also differ by changing the level of each blade. A thick conductive adhesive film can be formed.

[0018] According to a eighth aspect of the present invention, there is provided a semiconductor device manufacturing apparatus, comprising:
A semiconductor device manufacturing apparatus for transferring a conductive adhesive to a bump formed on a peripheral electrode of a semiconductor element by a transfer unit and connecting the bump to a corresponding electrode on the upper surface of the semiconductor carrier, wherein the transfer unit is a conductive unit. A transfer plate for laminating the conductive adhesive, and a plurality of blades arranged to form different gaps with respect to the surface of the transfer plate to adjust the thickness of the conductive adhesive. In this manner, the transfer unit is arranged such that different gaps are formed on the surface of the transfer dish and the transfer dish on which the conductive adhesive is laminated, and a plurality of sheets for adjusting the thickness of the conductive adhesive are provided. With the blade, a plurality of conductive adhesive films having different thicknesses can be formed. Therefore, by immersing a part of the bump in the conductive adhesive film and transferring the conductive adhesive to the bump, it is possible to supply a different amount of the conductive adhesive depending on the electrode pitch of the semiconductor element to be mounted. it can.

According to a ninth aspect of the present invention, there is provided an apparatus for manufacturing a semiconductor device, comprising:
A semiconductor device manufacturing apparatus for transferring a conductive adhesive to a bump formed on a peripheral electrode of a semiconductor element by a transfer unit and connecting the bump to a corresponding electrode on the upper surface of the semiconductor carrier, wherein the transfer unit is a conductive unit. A transfer dish having a plurality of steps for laminating a conductive adhesive, and a single blade for adjusting the thickness of the conductive adhesive. As described above, since the transfer unit includes the transfer plate having a plurality of steps for laminating the conductive adhesive and one blade for adjusting the film thickness of the conductive adhesive, the transfer unit has a plurality of different thicknesses. A conductive adhesive film can be formed. Therefore, by immersing a part of the bump in the conductive adhesive film and transferring the conductive adhesive to the bump, it is possible to supply a different amount of the conductive adhesive depending on the electrode pitch of the semiconductor element to be mounted. it can.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a sectional view showing a structure of an MCM on which three elements are mounted in a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a plan view thereof. In the same figure, the connection part (Au bump) when FIG. 2 is cut by AB
FIG. 1 is a cross-sectional view including the configuration.

As shown, the carrier substrate (semiconductor carrier) 4 is formed of an insulating substrate having a plurality of wiring electrodes 6 on the upper surface and external electrodes (not shown) arranged in a lattice on the lower surface. A first semiconductor element 1, a second semiconductor element 2,
And the third semiconductor element 3 are mounted face down on one carrier substrate 4, and at this time, an Al electrode 5 which is a peripheral electrode of each semiconductor element, a wiring electrode 6 of the carrier substrate 4, Are electrically connected to the Au bumps 7 via the conductive adhesive 8. Further, the amount of the conductive adhesive of the semiconductor element 1 is smaller than the amount of the conductive adhesive of the semiconductor element 3. In addition, a sealing resin 9 is injected and hardened into the gaps between all the semiconductor elements 1, 2, 3 and the carrier substrate 4 and around the semiconductor elements 1, 2, 3 to protect the semiconductor elements 1, 2, 3. .

Next, a method of manufacturing an MCM on which three semiconductor elements of this embodiment are mounted will be described with reference to the drawings. 3 and 4 are process diagrams showing a method for manufacturing the MCM of this embodiment. First, as shown in FIG. 3A, an Au bump 7 is formed on the Al electrode 5 of the first semiconductor element 1.
To form Next, the conductive adhesive film 11 is placed on the transfer dish 10.
Is formed (FIG. 3B). Next, the first semiconductor element 1 is face down, and the Au bump 7 is formed on the conductive adhesive film 11.
Is immersed, and an optimal amount of the conductive adhesive 12 corresponding to the minimum pitch mounting of the device electrodes of the first semiconductor device 1 is transferred onto the Au bumps 7 (FIG. 3C,
(D)). Next, the conductive adhesive 1 on the first semiconductor element 1
The Au bump 7 to which the substrate 2 is supplied and the corresponding wiring electrode 6 on the upper surface of the carrier substrate 4 are aligned, and the carrier substrate 4
The first semiconductor element 1 is mounted at an appropriate position above (FIG. 3
(E)).

Next, as shown in FIG. 4F, an Au bump 7 is formed on the Al electrode 5 of the second semiconductor element 2. Next, a conductive adhesive film 13 thicker than the conductive adhesive film 11 is formed on the transfer dish 10 (FIG. 4G). Next, the second semiconductor element 2 is placed face-down to form the conductive adhesive film 13.
Then, a part of the Au bump 7 is immersed, and an optimal amount of the conductive adhesive 14 corresponding to the minimum pitch mounting of the device electrodes of the second semiconductor device 2 is transferred onto the Au bump 7 (FIG. 4).
(H), (i)).

Next, as shown in FIG. 5, the Au bump 7 on the second semiconductor element 2 to which the conductive adhesive 14 has been supplied,
The corresponding wiring electrodes 6 on the upper surface of the carrier substrate 4 are aligned, and the second semiconductor element 2 is mounted at an appropriate position on the carrier substrate 4 (FIG. 5 (j)). After mounting the third semiconductor element 3 on the carrier substrate 4 in the same process as the mounting of the first semiconductor element 1 and the second semiconductor element 2, the thermosetting is performed, and then the three mounted semiconductor elements are sealed. The resin 9 is injected and cured. At this time, the sealing resin 9 is injected into a gap formed between the semiconductor element and the carrier substrate 4 and a peripheral portion thereof. Through the above steps, three semiconductor elements 1, 2,
3 is completed (FIG. 5 (k)).

Next, in the step of transferring the conductive adhesive, the thickness of the conductive adhesive film formed on the transfer plate is changed in order to vary the amount of the conductive adhesive depending on the electrode pitch of the semiconductor element to be mounted. The method for changing the value will be described. 6A and 6B show a transfer unit for forming three types of film thicknesses in this embodiment, wherein FIG.
(B) is a cross-sectional view when (a) is cut by CD.
The transfer unit is a doughnut-shaped transfer plate 16 having a smooth and flat surface, a first blade 18 that forms a film surface for performing transfer by a rotary motor 17 installed at the center of the transfer plate 16, The second blade 19, the third blade 20, and the conductive adhesive 23 are constantly agitated, and the scraping blade 21 for once destroying the smoothness of the film surface and the scraping blade 22 for collecting the conductive adhesive 23 repelled to the surroundings.
It has. First blade 18, second blade 1
The ninth and third blades 20 are arranged so that different gaps h ₁ , h ₂ and h ₃ are formed on the surface of the transfer dish 16. Then, the conductive adhesive is laminated on the transfer dish 16 and the first blade 18, the second blade 19, the third blade 20, the scraping blade 21, and the scraping blade 22 are rotated to form a film thickness. adjust. In this case, by attaching three blades, three types of conductive adhesive films 23 having different thicknesses can be formed on one transfer plate 16. The number of blades may be two or three or more.

FIG. 7 shows another example of a transfer unit for forming three types of film thickness in this embodiment.
(A) is a plan view, and (b) is a cross-sectional view when (a) is cut by EF. The transfer unit includes a rotary motor 17, a scraping blade 21, and a scraping blade 22, as in FIG.
The shape of the transfer plate 24 is different. The transfer dish 24 has a plurality of steps 24a, 24b, 24c having a flat surface. And
The conductive adhesive is laminated on the transfer plate 24, and the blade 25,
The scraping blade 21 and the scraping blade 22 are rotated to form and adjust the film thickness. In this case, by using the transfer plate 24 having the unevenness, one blade 25
Thus, the conductive adhesive films 23 having different thicknesses can be formed. In the transfer unit of FIG. 6, a plurality of blades may be attached as shown in FIG.

As described above, as shown in this embodiment, the amount of the conductive adhesive 8 differs depending on the electrode pitch of the semiconductor element 1 to be mounted. It is possible to secure a sufficient amount of the conductive adhesive 8 to absorb the warpage or the like. Further, since the amount of the conductive adhesive 8 is supplied corresponding to the minimum pitch of the device electrodes of the semiconductor element 1 to be mounted, it is necessary to secure an optimal amount of the conductive adhesive 8 in mounting the semiconductor element 1. Can be. Further, the shorter the electrode pitch of the semiconductor element 1 is, the smaller the amount of the conductive adhesive 8 is, so that the short circuit between the adjacent elements can be prevented.

The conductive adhesive 12,
In the step of supplying the conductive bumps 14, a plurality of conductive adhesive films 23 having different thicknesses are formed, and a part of the Au bump 7 is immersed in the conductive adhesive film 23 to form a conductive adhesive on the Au bump 7. By transferring the conductive adhesives 12 and 14 depending on the electrode pitch of the semiconductor elements 1 and 2 to be mounted, the conductive adhesives 12 and 14 are supplied, so that the film thickness can be reduced on one transfer plate in the same transfer unit. Can be changed. For this reason, in the production of the MCM using the Au bump and the conductive adhesive, the production with higher yield can be performed using the conventional equipment, process, and system.

[0027]

According to the semiconductor device of the first aspect of the present invention, the amount of the conductive adhesive varies depending on the electrode pitch of the semiconductor element to be mounted. Therefore, a sufficient amount of the conductive adhesive to absorb the warpage or the like can be secured, and the mounting yield can be improved. As a result, the mounting yield of the entire MCM can be improved.

According to the second aspect, since the amount of the conductive adhesive is supplied corresponding to the minimum pitch of the device electrodes of the semiconductor element to be mounted, an optimal amount of the conductive adhesive is secured in mounting the semiconductor element. can do. According to the third aspect, since the amount of the conductive adhesive is smaller as the electrode pitch of the mounted semiconductor element is smaller, it is possible to prevent short-circuit between adjacent elements.

According to the method of manufacturing a semiconductor device according to claim 4 of the present invention, when supplying the conductive adhesive to the bumps,
By forming a plurality of conductive adhesive films having different thicknesses, immersing a part of the bumps in the conductive adhesive film and transferring the conductive adhesive to the bumps, the electrode pitch of the semiconductor element to be mounted is reduced. Since different amounts of conductive adhesive are supplied, the film thickness can be changed in the same transfer unit. Therefore, the amount of the conductive adhesive to be supplied can be adjusted according to the electrode pitch of the semiconductor element to be mounted by using the same equipment and process flow as before, and as a result, the entire MCM can be adjusted. Yield can be greatly improved.

According to the fifth aspect, a plurality of conductive adhesive films having a plurality of thicknesses corresponding to the number of blades can be formed on one transfer plate. According to the sixth aspect, a conductive adhesive film having a plurality of thicknesses corresponding to the number of steps of the transfer plate can be formed on one transfer plate. According to the seventh aspect, the conductive adhesive film having a plurality of thicknesses corresponding to the number of steps of the transfer plate can be formed on one transfer plate, and the level of each blade is changed. Also, a conductive adhesive film having a different thickness can be formed.

According to the semiconductor device manufacturing apparatus of the present invention, the transfer unit is formed such that different gaps are formed between the transfer plate on which the conductive adhesive is laminated and the surface of the transfer plate. Since there are provided a plurality of blades arranged to adjust the thickness of the conductive adhesive, a plurality of conductive adhesive films having different thicknesses can be formed. Therefore, by immersing a part of the bump in the conductive adhesive film and transferring the conductive adhesive to the bump, it is possible to supply a different amount of the conductive adhesive depending on the electrode pitch of the semiconductor element to be mounted. it can.

According to the semiconductor device manufacturing apparatus of the ninth aspect of the present invention, the transfer unit adjusts the thickness of the conductive adhesive and the transfer plate having a plurality of steps for laminating the conductive adhesive. And a single blade, so that a plurality of conductive adhesive films having different thicknesses can be formed. Therefore, by immersing a part of the bump in the conductive adhesive film and transferring the conductive adhesive to the bump, it is possible to supply a different amount of the conductive adhesive depending on the electrode pitch of the semiconductor element to be mounted. it can.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a connection structure of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a plan view of FIG.

FIG. 3 is a process flow sectional view of a method for manufacturing a semiconductor device according to an embodiment of the present invention;

FIG. 4 is a process flow sectional view after FIG. 3;

FIG. 5 is a process flow sectional view after FIG. 4;

FIG. 6A is a plan view of a transfer unit for adjusting a film thickness according to the embodiment of the present invention, and FIG. 6B is a cross-sectional view taken along line CD of FIG.

FIG. 7A is a plan view of another example of the transfer unit for adjusting the film thickness according to the embodiment of the present invention, and FIG.
It is -F sectional drawing.

FIG. 8 is a cross-sectional view showing the structure of a conventional MCM.

FIG. 9 is a plan view of FIG.

FIG. 10 is a process flow cross-sectional view showing a conventional MCM manufacturing process.

11 is a process flow sectional view after FIG. 10;

FIG. 12A is a plan view of a transfer unit for adjusting a film thickness in a conventional MCM manufacturing process, and FIG. 12B is a cross-sectional view thereof.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 1st semiconductor element 2 2nd semiconductor element 3 3rd semiconductor element 4 Carrier board 5 Al electrode 6 Wiring electrode of carrier board 7 Au bump 8 Conductive adhesive 9 Sealing resin 10 Transfer dish 11 Conductive adhesive Film 12 conductive adhesive 13 conductive adhesive film 14 conductive adhesive 15 MCM 16 transfer dish 17 rotating unit 18 first blade 19 second blade 20 third blade 21 scraping blade 22 scraping blade 23 conductive Conductive adhesive film 24 transfer dish 25 blade 27 semiconductor element 28 semiconductor element 29 semiconductor element 30 carrier 31 conductive adhesive 32 Au bump 33 carrier electrode 34 sealing resin 35 device electrode 36 transfer film 37 conductive adhesive film 38 conductive Adhesive 39 Transfer plate 40 Blade 41 Scraping blade 42 Scraping blur De 43 rotating unit 44 conductive adhesive film

Claims (9)

[Claims] 1. A semiconductor carrier comprising an insulating substrate having a plurality of electrodes on an upper surface and an external electrode on a bottom surface, and a plurality of peripheral electrodes connected to the plurality of electrodes on the upper surface of the semiconductor carrier by a conductive adhesive. A semiconductor device comprising: a semiconductor element, a gap formed between the semiconductor element and the semiconductor carrier, and a sealing resin that fills and covers a peripheral end of the semiconductor element. A semiconductor device, wherein the amount of the conductive adhesive varies depending on the electrode pitch of the element. 2. The semiconductor device according to claim 1, wherein the amount of the conductive adhesive is supplied corresponding to the minimum pitch of the element electrodes of the semiconductor element to be mounted. 3. The semiconductor device according to claim 1, wherein the amount of the conductive adhesive is smaller as the electrode pitch of the semiconductor element is smaller. 4. A step of forming a bump on a peripheral electrode of a semiconductor element, a step of supplying a conductive adhesive to the bump, and a step of forming a bump and a semiconductor on the semiconductor element provided with the conductive adhesive. Positioning and mounting the corresponding electrode on the carrier upper surface, curing the conductive adhesive, and sealing the sealing resin between the semiconductor element and the semiconductor carrier and the periphery thereof And a step of curing the sealing resin, wherein when supplying a conductive adhesive to the bumps, a plurality of conductive adhesives of different thicknesses A film is formed, and a part of the bump is immersed in the conductive adhesive film to transfer the conductive adhesive to the bump. Bonding A method for manufacturing a semiconductor device, comprising supplying an agent. 5. A method in which a conductive adhesive is laminated on a transfer dish having a flat surface, and the film thickness is adjusted by a plurality of blades arranged so as to form different gaps with respect to the surface of the transfer dish. 5. The method of manufacturing a semiconductor device according to claim 4, wherein conductive adhesive films having different thicknesses are formed on the transfer plate. 6. A conductive dish is laminated on a transfer dish having a plurality of steps having a flat surface, and the thickness of the conductive adhesive is varied by adjusting the film thickness with a single blade. 5. The method according to claim 4, wherein the semiconductor device is formed on a transfer plate. 7. A conductive dish is laminated on a transfer dish having a plurality of steps having a flat surface, and the thickness of the conductive adhesive is varied by adjusting the film thickness with a plurality of blades. 5. The method according to claim 4, wherein the semiconductor device is formed on a transfer plate. 8. A semiconductor device manufacturing apparatus for transferring a conductive adhesive to a bump formed on a peripheral electrode of a semiconductor element by a transfer unit and connecting the bump to a corresponding electrode on an upper surface of a semiconductor carrier. A transfer plate on which the transfer unit is laminated with a conductive adhesive, and a plurality of blades arranged to form different gaps with respect to the surface of the transfer plate to adjust the thickness of the conductive adhesive. And a semiconductor device manufacturing apparatus comprising: 9. A semiconductor device manufacturing apparatus for transferring a conductive adhesive to a bump formed on a peripheral electrode of a semiconductor element by a transfer unit and connecting the bump to a corresponding electrode on an upper surface of a semiconductor carrier. An apparatus for manufacturing a semiconductor device, wherein the transfer unit includes a transfer plate having a plurality of steps for laminating a conductive adhesive, and a single blade for adjusting the thickness of the conductive adhesive.