JPH11219987A - Tab semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent degradation in moisture resistance by, meeting the increased number of electrodes of a TAB semiconductor device, allowing a resin for coating a pellet to infiltrate to a rear surface side of a tape for perfect connection between the tape and the pellet. SOLUTION: A conductive pattern is laminated on an insulating tape 1 comprising a through hole 1b and a part of it is extended in the through hole from at least a counter position of the through hole to constitute an inner lead, while a first leads 8a arrayed at an interval sufficiently wider than the lead width and a second leads 8b arrayed narrower than the array interval of the leads are also constituted, and a semiconductor pellet 4 is allocated in the through hole of a TAB tape 3, wherein a protruding part 9 which regulates flow of a resin 5 is formed in the region where at least no inner lead exists at the edge of a rear surface side through hole to a conductive pattern formation surface, and an electrode 4a on the pellet and the leads are electrically connected and a min part comprising a connection part and a semiconductor pellet upper surface is coated with a resin.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device using a TAB tape.

[0002]

2. Description of the Related Art A TAB semiconductor device is generally used to reduce the size of an electronic circuit device while maintaining high performance and high performance. An example of this will be described with reference to FIGS. In the drawing, reference numeral 1 denotes a long heat-resistant insulating tape, which is provided with feed holes 1a and 1a along both sides, and rectangular through-holes 1b at regular intervals in the longitudinal direction at the middle in the width direction. ing.
Reference numeral 2 denotes a conductive pattern formed by etching a conductive foil laminated on the insulating tape 1. The inner lead 2a extends into the through hole 1b, and the outer lead 2b connected to the inner lead 2a and extending on the insulating tape 1. Is composed. The leads 2a, 2b extend in parallel, and the arrangement intervals of the leads are changed by a non-parallel portion 2c having a fan shape. The TAB tape 3 is constituted by an integral body of the insulating tape 1 and the conductive pattern 2. Reference numeral 4 denotes a semiconductor pellet disposed in the through hole 1b, which has a large number of electrodes 4a on the peripheral edge of the upper surface, and the electrodes 4a and the inner leads 2a are electrically connected by means such as thermocompression bonding. Make up the structure. After the semiconductor pellets 4 are connected to the inner leads 2a, a step is formed in the middle using an elastic punch (not shown) as shown in FIG. Reference numeral 5 denotes a sealing resin that covers the surface of the semiconductor pellet 4 and the connection between the electrode 4a and the inner lead 2a in the through hole 1b of the semiconductor intermediate structure and protects it from external corrosive gas and external force. By the way, in an electronic circuit device having a large number of electrodes and requiring high-density mounting, for example, a semiconductor device for driving a liquid crystal display device, the electrodes on the semiconductor pellet 4 are arranged separately on the input side and the output side, and The output side and the output side are extremely different. On the side where the number of electrodes is large, the width and pitch of the electrodes are reduced. For example, when the dimensions of the electrode 4a are 60 μm in width, 90 μm in length, and 20 μm in height, the input side having a small number of electrodes can arrange the electrodes at sufficiently large intervals as compared with the electrode width. On the other hand, on the output side where the number of electrodes is large, the arrangement interval of the electrodes is set to, for example, 70 μm, and the electrode interval is smaller than the electrode width.
It is set to μm. Then, for example, a conductive foil having a thickness of 18 μm is etched to a width of 60 μm and an arrangement interval of 70 μm to form an inner lead 2a corresponding to the electrode 4a.
The resin 5 of the semiconductor device is generally formed by coating by a screen printing method. This will be described with reference to FIG. In the figure, reference numeral 6 denotes a mask using a thin metal plate having a thickness of about 100 μm, and a plurality of opening windows 6a are formed at positions corresponding to the through holes 1b of the semiconductor intermediate structure. The mask 6 has a semiconductor pellet 4 connected thereto in advance and a TAB positioned at a fixed position.
The surface of the through hole 1b of the tape 3 and the surface of the semiconductor pellet 4 are covered so as to be exposed from the opening window 6a. Reference numeral 7 denotes a squeegee which traverses over the opening window 6a and reciprocates on the mask 6. The squeegee 7 supplies an approximately constant amount of the fluid resin 5 supplied onto the mask 6 from the opening window 6a as shown in FIG. Open window 6
It is moved to the side opposite to the supply side with respect to a. In the illustrated example, only one squeegee 7 is shown. However, generally, two squeegees are arranged in a C-shape on the side, the squeegee in the forward direction in the traveling direction is raised, and the resin is moved by the squeegee in the rear. The coating operation is continuously performed by seven reciprocating operations. When the operation shown in FIG. 10 is completed, the mask 6 is removed from the semiconductor intermediate structure, and the TAB tape 3 is moved to the next step. Since the resin 5 in the through-hole 2b is uncured, it flows during the process movement and flows through the through-hole 1b and the semiconductor pellet 4.
Then, the TAB tape 3 goes around to the back side of the TAB tape 3 to integrate the TAB tape 3 and the semiconductor pellet 4 as shown in FIG. Here, since the resin 5 protrudes and adheres to the peripheral edges 1c and 1d at both open ends of the through hole 1b of the TAB tape 3,
The TAB tape 3 and the semiconductor pellet 4 are firmly integrated. After the resin 5 is sufficiently cured, the resin-coated semiconductor intermediate structure is punched out of the TAB tape 3 into a predetermined shape and separated into individual semiconductor devices for use.

[0003]

The thickness of the semiconductor device having the structure shown in FIG. 11 is determined by the thickness of the TAB tape 3 and the thickness of the semiconductor pellet 4, and both are thin, so that it is easy to cope with high-density mounting. Keeping this feature, TAB tape 3 and semiconductor pellet 4
In order to increase the number of electrodes without changing the external dimensions of the electrodes, it is necessary to reduce the dimensions of the electrodes. After reducing the width of the electrodes, the electrodes are arranged in a staggered pattern to reduce the arrangement interval of the electrodes. Is made to correspond. On the other hand, when the planar dimension of the electrode is reduced, the height of the electrode is limited, and the interval between the inner leads is also limited by the thickness of the inner lead. Therefore, each dimension is determined in consideration of ease of manufacturing. By the way, resin 5
A mixture of a base resin such as a thermosetting epoxy resin, a filler, a curing accelerator, and a coloring material is used.
The width of each of the electrode 4a and the inner lead 2a is 60 μm.
m, when the arrangement interval is 70 μm, the inner lead 2a
The distance between the leads is 10 μm, and the resin 5 passing between the leads has adhesion to the lead wall surface due to sedimentation caused by gravity, and the thickness of the leads is larger than the distance between the leads. , And as the curing of the resin 5 progresses with the elapse of time, the fluidity of the resin further decreases. The adhesiveness of the resin 5 to the lead differs depending on the plating material coated on the lead and the surface condition. As described above, even if the resin coating area is accurately determined by the opening window 6a of the mask 6 at the opening edge 1c on the TAB tape 3,
At the periphery 1d of the opening on the back surface of the TAB tape 3, there is a large difference in the fluidity of the resin 5 between the portion where the inner lead extends and the portion where the inner lead does not extend, so that the covering state varies. In the case of a semiconductor device for driving a liquid crystal display device in which the number of electrodes is significantly different between the input side and the output side, the inner lead 2a
Are significantly different between the input side and the output side, and there is a large difference in the fluidity of the resin even in the inner lead portion. as a result,
As shown in FIG. 12, the resin 5 has the lower end 1 of the inner peripheral wall of the through hole 1b.
e, the resin 5 cannot be wrapped around the back side peripheral edge 1d of the TAB tape 3, and the resin 5 peels off from the inner periphery of the through hole 1b due to the external force applied when the TAB tape 3 is punched out, and cracks or chipping occurs. There were problems such as a reduction in mechanical strength due to external force acting on the inner lead 2a from a portion, and a decrease in moisture resistance due to incomplete resin coating on the semiconductor pellet 4. In order to solve such a problem, the material of the filler of the resin 5 is changed, the particle size is reduced, and the mixing ratio is changed to improve the fluidity between the leads. If the particle diameter of the material is reduced, the fluidity may be reduced, and the variation in the coating state due to the difference in the fluidity of the resin between the portion where the inner lead 2a extends and the portion where the inner lead 2a does not extend is fundamentally improved. Could not.

[0004]

SUMMARY OF THE INVENTION The present invention has been proposed to solve the above-mentioned problems, and has been proposed in which a conductive pattern is laminated on an insulating tape having a through hole, and a part of the conductive pattern is formed at least from a position facing the through hole. A first lead group arranged at intervals sufficiently wider than the lead width and a second lead group arranged narrower than the arrangement interval of the lead groups by extending into the through-hole; A semiconductor pellet is disposed in the through hole of the TAB tape having a protrusion for restricting resin flow at least in a region where there is no inner lead at the periphery of the through hole on the back surface side with respect to the surface. Are electrically connected to each other, and a main portion including the upper surface of the semiconductor pellet and the connection portion is covered with a resin.

[0005]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In a TAB type semiconductor device according to the present invention, at least an inner lead on a peripheral edge of a back side through-hole with respect to a conductive pattern forming surface of a TAB tape having first and second lead groups having different lead intervals. It is characterized by forming a protrusion that regulates the flow of resin in the area where there is no, but by forming the inner wall of the protrusion located at the corner of the through-hole in a polygonal or arc shape, the horizontal direction of the resin descending The transfer to can be improved. In addition, a protrusion is formed on the periphery of the through hole on the second lead group side where the lead interval is set to be narrow, and this protrusion is made wider than the protrusion formed in the other portion, or the through hole is formed more than the other portion. Can also be brought into proximity. In the case where the protrusion formed on the second lead group side is made to approach the through hole, an intermediate portion of the protrusion in the lead arrangement direction may be made to approach the through hole.

[0006]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. In the figure, the same components as those in FIGS. 7 and 8 are denoted by the same reference numerals, and redundant description will be omitted. What is different in the figure is that the conductive patterns 2 include a first lead group 8a arranged at intervals sufficiently larger than the lead width and a second lead group 8b arranged narrower than the arrangement interval of the lead groups 8a, The first and second lead groups 8a and 8b are extended into the through-hole 1b from at least positions facing the through-hole 1b, and the lead group 8a and 8b are connected to the conductive pattern forming surface of the TAB tape 3 in association with the lead group. On the other hand, the first lead group 8 having at least a region on the periphery of the back surface side through-hole 1b where there is no inner lead and a sufficiently large interval.
The only difference is that the protrusion 9 for restricting the flow of the resin 5 is formed in the area where “a” is located. As shown in FIGS. 1 and 2, the protrusion 9 is formed in a substantially U-shape or a substantially C-shape from the side of the first lead group 8a where the lead arrangement interval is set wide.
With this structure, the resin covering the surface of the semiconductor pellet 4 is coated with the TAB tape 3 between the through hole 1 b and the semiconductor pellet 4.
In the area around the through hole 1b where there is no lead group 8a or 8b, there is no obstacle to the resin flow, so that the resin 5 quickly goes around to the back side of the TAB tape 3. Also, since the lead interval is wide in the area where the first lead group 8a is located, the flowability of the resin is less reduced and the resin is wrapped around the back surface of the TAB tape 3 in a short time. The second
In the part of the lead group 8b, it takes a long time for the resin to descend because the interval between the inner leads is extremely narrow, and a sufficient amount of resin is supplied even if the resin supplied from other parts reaches the back side of the TAB tape 3. It cannot reach the back side of the TAB tape 3. In the semiconductor device according to the present invention, since the protrusion 9 having a predetermined shape is formed at a predetermined position on the back surface of the TAB tape 3, the resin 5 that has previously wrapped around the back surface of the TAB tape 3 is formed.
The protrusion on the back surface of the TAB tape 3 is stopped by the protrusion 9, and the descent along the side wall of the semiconductor pellet 4 proceeds. Since the cross-sectional area of the falling resin increases from the cross-sectional area of the opening between the semiconductor pellet 4 and the through hole 1b to the cross-sectional area of the opening between the semiconductor pellet 4 and the protrusion 9, the amount of drop per unit time becomes small, and When the supply of the resin stops, the descent of the resin stops. Further, since both end portions of the protrusion 9 are arranged in a region adjacent to the rear surface region of the through hole 1b opposed to the second lead group 8b, the resin 5 which has rapidly spread in this region is the second lead. It enters the facing area of the group 8b and is integrated with the resin supplied from between the leads of the second lead group 8b. For this reason, in a state where the time has sufficiently passed and the resin is in a semi-cured state and the flow has stopped, as shown in FIG. 3 and FIG. Although the amount of protrusion of the resin at the intermediate portion (the portion denoted by reference numeral 5a) of the second lead group 8b in the arrangement direction is small, the amount of protrusion at both ends (portion denoted by reference numeral 5b) is sufficiently large, so that the TAB tape 3 and the semiconductor pellet 4 are strong. Integrated into Thus, the problem caused by the extremely poor fluidity of the resin in the second lead group 8b can be solved by appropriately forming the projections 9. In FIG. 4, the inner wall of the projection 9 located at the corner of the through hole 1b is set at 90 degrees in accordance with the rectangular shape of the through hole 1b. After the resin descending in the hole 1b and moving in the horizontal direction along the surface of the TAB tape 3 is stopped by the protrusion 9, the movement of the through hole 1b in the peripheral direction can be facilitated, and the TAB can be quickly performed. The surplus resin that has fallen to the back side of the tape 3 can be supplied to a portion that requires time for the resin to descend. The projection 9 is a process of manufacturing the TAB tape 3 and can be formed by printing resin ink in a predetermined pattern by a screen printing method. In this case, when the application window formed on the screen printing mask is thin and long, the application window is divided into a plurality of portions, and the portion adjacent to the divided window and the divided window, that is, the portion where the protrusion 9 is not formed, is formed of the resin 5. What is necessary is just to arrange in the part which flows in easily. The projection 9 can be formed not only by a screen printing method but also by a transfer method. In this case, the resin 5
It can be formed in any manufacturing process as long as it is before the step of applying a. FIG. 5 shows another embodiment of the TAB type semiconductor device according to the present invention. In the figure, the same components as those in FIG. 1 are denoted by the same reference numerals, and redundant description will be omitted. In the figure, 10 is T
Through hole 1b on the second lead group 8b side on the back surface of AB tape 3
In the illustrated example, the second protrusion is formed in a straight line along the opening edge of the through hole 1b, and both ends are connected to the protrusion (first protrusion) 9 in FIG. . This first,
The second protrusions 9 and 10 are disposed at substantially the same distance from the through hole 1b, and the corners are formed in an arc shape. This semiconductor device includes a second lead 8b having a narrow lead interval.
Since the second protruding portion 10 is also arranged at the portion, the first protruding portion 9
As a result, the surplus of the resin whose movement in the horizontal plane has been stopped is moved to the protrusion 10 region, the region surrounded by the second protrusion 10 is quickly covered with the resin, and the opening end periphery of the through hole 1b is extended over the entire circumference. Resin coating can be performed, and mechanical connection between the semiconductor pellet 4 and the TAB tape 3 can be ensured. In this semiconductor device, the first and second protrusions 9 and 10 are arranged at the same distance from the through hole 1b, but the first protrusion 9 from which the resin 5 descends in a short time passes through the second protrusion 10. It may be separated from the hole 1b. When the width of the coating resin on the periphery of the through hole 1b becomes narrow at the portion of the protrusion 10 by bringing the second protrusion 10 close to the through hole 1b, the second protrusion 10 is widened outward in advance. It can be formed and its width can be set sufficiently wide. As a result, the width of the resin 5 integrated with the second protrusion 10 can be increased, the adhesive strength of the resin 5 at the periphery of the through hole 1b can be increased, and the TAB tape 3 and the semiconductor pellet 4 can be firmly bonded. Can be integrated. FIG. 6 shows another embodiment of the TAB type semiconductor device according to the present invention. In the figure, the same components as those in FIG. 1 are denoted by the same reference numerals, and redundant description will be omitted. In the figure, 11
Is a second protrusion formed on the back surface of the TAB tape 3 at the periphery of the through hole 1b on the second lead group 8b side, facing the openings at both ends of the substantially C-shaped first protrusion 9; In the illustrated example, it is formed in a substantially rectangular shape along the opening edge of the through hole 1b, and both ends are separated from both ends of the first projection 9, and the middle is arranged so as to be close to the through hole 1b. In this embodiment, as in the embodiment shown in FIG. 1, a region having no lead group 8 and a first lead having a wide lead interval are used.
In the area where the lead group 8a is located, the resin 5 quickly spreads around the through hole 1b on the back surface of the TAB tape 3, and the resin 5 spreads later in the second lead group 8b where the lead interval is small. The resin that has spread earlier in the adjacent portion is stopped from spreading outward by the second protrusion 11. The projecting portion 11 has a through hole 1b from both ends toward the middle portion.
, The second protrusion 11
The resin 5 that has spread before the both end portions moves to the intermediate portion along the inner wall of the protrusion 11 and quickly fills the space between the through hole 1b and the second protrusion 11 to form the second lead group 8b. From the resin 5 supplied later. First and second projections 9,
11 is open at both ends, but may be connected at both ends. In this case, it is desirable to form the shape of the connection portion so that the resin can move in one direction without stagnation. In addition, the second protrusion 11 may be not only in the shape of a letter but also in the shape of a triangle if the inner wall on the side of the through hole 1b is in the shape of a letter.
It may be trapezoidal. In this embodiment, the range in which the resin 5 spreads is restricted by the first and second protrusions 9 and 11 as compared with the embodiment in FIG. 1, so that the desired range can be surely covered with the resin. In the above embodiment, the first and second projections 9, 10, and 11 both have the surface facing the through hole 1b continuous, but face the corner of the through hole 1b without the lead groups 8a and 8b. A concave portion is formed in the protrusion disposed at the portion to be formed, and excess resin is sufficiently accommodated in the concave portion, or at least a portion of the second protrusions 10 and 11 opposed to the portion excluding the corner of the through hole 1b is combed. By forming a convex-concave shape, the convex portion of the concave-convex portion is brought close to the through hole 1b, and a small amount of resin is accommodated in the concave portion, so that it can correspond to a portion where the amount of supplied resin is small.

[0007]

As described above, according to the present invention, even if the interval between the inner leads extended into the through hole of the TAB tape is narrow, the resin supplied into the through hole from the front surface of the TAB tape can be supplied to the back side. The semiconductor device can be wrapped around the periphery of the through hole, the semiconductor pellet and the TAB tape can be reliably integrated, and a semiconductor device having sufficient mechanical strength and moisture resistance can be realized.

[Brief description of the drawings]

FIG. 1 is a side sectional view showing an intermediate structure for manufacturing a TAB semiconductor device according to the present invention.

FIG. 2 is a side sectional view of the semiconductor intermediate structure shown in FIG. 1;

FIG. 3 is a side sectional view showing a semiconductor device according to the present invention.

FIG. 4 is a back view of the semiconductor device shown in FIG. 3;

FIG. 5 is a rear view showing another embodiment of the present invention.

FIG. 6 is a rear view showing another embodiment of the present invention.

FIG. 7 is a partially transparent perspective view showing an example of a TAB type semiconductor device.

8 is a side sectional view of the semiconductor device in FIG. 7;

9 is a sectional side view illustrating a resin coating operation of the semiconductor device in FIG. 7;

FIG. 10 is a side sectional view illustrating a resin coating operation of the semiconductor device.

FIG. 11 is a side sectional view illustrating a resin coating operation of the semiconductor device.

FIG. 12 is a side sectional view showing a problem of the semiconductor device in FIG. 7;

[Explanation of symbols]

 1b Through hole 1 Insulating tape 8 Conductive pattern including inner lead 3 TAB tape 4 Semiconductor pellet 4a Electrode 5 Resin 8a First lead group 8b Second lead group 9 Projection

Claims (7)

[Claims] A semiconductor pellet is arranged in a through hole of a TAB tape in which a conductive pattern including a plurality of inner leads extending in the through hole is laminated on an insulating tape having the through hole. In the TAB type semiconductor device in which the electrode and the inner lead are electrically connected and the main part including the upper surface of the semiconductor pellet and the connection part is covered with the resin, the first array is arranged at an interval sufficiently wider than the lead width. A lead group and a second lead group arranged narrower than the arrangement interval of the lead group, wherein the first and second lead groups are extended from at least opposing positions of the through hole into the through hole; A TAB-type semiconductor device, wherein a protrusion for restricting resin flow is formed at least in a region where there is no inner lead on the periphery of the back surface side through-hole with respect to the conductive pattern forming surface of the TAB tape. . 2. The TAB semiconductor device according to claim 1, wherein the inner wall of the projection located at the corner of the through hole is formed in a polygonal or arc shape. 3. The TAB type semiconductor device according to claim 1, wherein a protrusion is formed on the periphery of the through hole on the second lead group side on the back surface of the TAB tape. 4. The TAB semiconductor device according to claim 3, wherein the width of the protrusion formed on the second lead group side is wider than the width of the protrusion formed on the other part. 5. The TAB type semiconductor device according to claim 3, wherein the protrusion formed on the second lead group side is closer to the through hole than the protrusion formed on the other part. 6. A projection formed on the second lead group side, and
6. The TAB type semiconductor device according to claim 5, wherein the lead group is arranged closer to the through hole from both ends in the arrangement direction to the middle part. 7. A projection formed on the side of the second lead group,
7. The TAB according to claim 6, wherein the width of the lead group is increased from both ends in the arrangement direction to the middle part.
Type semiconductor device.