JPH11214553A - Package for semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent resin adhesive for bonding and fixing a semiconductor element from unnecessarily spreading, and to hardly operate the electric connection of the electrode of the semiconductor element through a bonding wire with a prescribed metallize wiring layer. SOLUTION: A package for a semiconductor element is constituted of an insulating substrate 1 in which plural metallize wiring layers 7 are coated and derived from a mount part 1a, on which a semiconductor element 3 is mounted and the surrounding part of the mount part 1a through an outer surface and a cover body 2, and the semiconductor element 3 is bonded and fixed through resin adhesive 5 to the semiconductor element mount part 1a of the insulating substrate 1, and the cover body 2 is joined to the insulating substrate 1, and the semiconductor element 3 is air-tightly housed in a container constituted of the insulating substrate 1 and the cover body 2. In this case, at least the surface of the semiconductor element mount part 1a of the insulating substrate 1 is coated with a coating 6 made of fluoride surface active agent.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device housing package for housing a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, a semiconductor element housing package for housing a semiconductor element is generally made of an electrically insulating material such as an aluminum oxide sintered body, and a semiconductor element is mounted at a substantially central portion of an upper surface thereof. An insulating base having a metallized wiring layer made of a refractory metal powder of tungsten, molybdenum, manganese or the like led out from the periphery of the semiconductor element mounting portion to the outer peripheral end; and electrically connecting the semiconductor element to an external electric circuit. External lead terminals attached to the metallized wiring layer via a brazing material such as silver brazing, and a cover, and the semiconductor element is mounted on the semiconductor element mounting portion of the insulating base with an epoxy resin. And the electrodes of the semiconductor element are electrically connected via bonding wires, and finally on the upper surface of the insulating base. Body glass, is bonded by a sealing member such as resin, the semiconductor device as a final product by gas-tight housing a semiconductor element to a container interior made of an insulating base and the lid.

[0003]

However, in this conventional package for accommodating a semiconductor element, when moisture (OH group) contained in the air adheres to the surface of the insulating substrate, the surface of the insulating substrate becomes hydrophilic and epoxy A resin having a strong polarity such as a resin spreads greatly. Therefore, when the semiconductor element is bonded and fixed to the semiconductor element mounting portion of the insulating base via a resin adhesive made of epoxy resin, a part of the resin adhesive widely spreads around the semiconductor element mounting portion and around the semiconductor element mounting portion. It covers the metallized wiring layer that has been formed so as to make it impossible to firmly connect the bonding wire to the metallized wiring layer, or is adjacent when metal powder such as silver is added to the resin adhesive. There is a disadvantage that the metallized wiring layers are electrically short-circuited.

In order to solve the above-mentioned drawbacks, a film made of a cationic surfactant such as a hydrocarbon-based surfactant is previously applied to the surface of the insulating substrate to prevent moisture and the like from adhering to the surface of the insulating substrate. It is possible to prevent it.

However, the cationic surfactant such as the hydrocarbon surfactant has a critical surface tension of 30 dyn / d.
cm or more and the water repellency is slightly weak, so that in an atmosphere containing a large amount of water, it is impossible to completely prevent moisture (including OH groups) from adhering to the surface of the insulating base, and the insulating base may be attached to the semiconductor element mounting portion. When the semiconductor element is adhered and fixed via a resin adhesive made of epoxy resin, a part of the resin adhesive still spreads around the semiconductor element mounting portion, and metallization is formed around the semiconductor element mounting portion. There has been a problem that the wiring layer is covered to make it impossible to firmly connect the bonding wire to the metallized wiring layer.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and an object of the present invention is to enable an electrode of a semiconductor element housed therein to be firmly electrically connected to a predetermined metallized wiring layer via a bonding wire. An object of the present invention is to provide a package for housing a semiconductor element.

[0007]

According to the present invention, there is provided a mounting portion on which a semiconductor element is mounted, and an insulating substrate having a plurality of metallized wiring layers attached and derived from the periphery of the mounting portion to the outer surface;
A semiconductor element is bonded and fixed to the semiconductor element mounting portion of the insulating base via a resin adhesive, and the lid is joined to the insulating base. A semiconductor device housing package for hermetically housing a device, wherein a film made of a fluorine-based surfactant is applied to at least a surface of a semiconductor element mounting portion of the insulating base.

[0008] The present invention is also characterized in that the fluorosurfactant forming the film has a perfluoroalkyl group.

According to the package for accommodating a semiconductor element of the present invention, a film made of a fluorine-based surfactant, particularly a fluorine-based surfactant having a perfluoroalkyl group, on at least the surface of a mounting portion of the insulating base on which the semiconductor element is mounted. And the fluorine-based surfactant has a critical surface tension of 2
5 dyn / cm or less, a fluorine-based surfactant having a perfluoroalkyl group has a critical surface tension of 20 dyn / cm.
Even if the insulating substrate is placed in an atmosphere containing a large amount of moisture, moisture adheres to the semiconductor element mounting portion of the insulating substrate because of extremely low water repellency as described below. (Hydrophobic group)
The semiconductor element mounting portion of the insulating base does not become hydrophilic. As a result, when the semiconductor element is bonded and fixed to the semiconductor element mounting portion of the insulating base via the resin adhesive, the resin adhesive is mounted on the semiconductor element mounting portion. The metallized wiring layer which spreads widely around the part and is formed around the semiconductor element mounting part is effectively prevented from being covered, whereby each electrode of the semiconductor element is connected to a predetermined metallized wiring layer via a bonding wire. It is possible to make an extremely strong electrical connection.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings. 1 and 2 show an embodiment of a package for housing a semiconductor element according to the present invention, wherein 1 is an insulating base made of an electrically insulating material, and 2 is a lid. The insulating base 1 and the lid 2 constitute a container 4 for housing the semiconductor element 3.

The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, and the semiconductor element 3 is mounted and accommodated in a substantially central portion of the upper surface thereof. The semiconductor element 3 is bonded and fixed to the bottom surface of the concave portion 1a via a resin adhesive 5.

When the insulating substrate 1 is formed of, for example, an aluminum oxide sintered body, a suitable organic binder, a solvent and the like are added to a raw material powder such as aluminum oxide, silicon oxide, magnesium oxide and calcium oxide. The slurry is formed, and the slurry is formed into a reseat shape by a doctor blade method, a calendar roll method, or the like to obtain a ceramic green sheet (ceramic green sheet). Thereafter, the ceramic green sheet is subjected to an appropriate punching process. In addition, a plurality of these are laminated and fired at a high temperature of about 1600 ° C.

Also, at least the concave portion 1a of the insulating base 1
On the bottom surface, a film 6 made of a fluorine-based surfactant is applied, and even if water or the like contained in the air is to adhere to the exposed surface including the bottom surface of the concave portion 1a of the insulating substrate 1 by the film 6, the water or the like Is effectively prevented by the lipophilic group (hydrophobic group) of the fluorine-based surfactant of the film 6, and as a result, the bottom surface of the concave portion 1a of the insulating substrate 1 does not become hydrophilic. When the semiconductor element 3 is bonded and fixed to the bottom surface of the insulating substrate 1 via the resin adhesive 5, a part of the resin adhesive 5 spreads greatly on the bottom surface of the concave portion 1a of the insulating base 1 and travels along the side surface of the concave portion 1a to around the concave portion 1a. It doesn't crawl. Therefore, the metallized wiring layer 7 formed around the concave portion 1a described later is never covered with the resin adhesive 5, and the metallized wiring layer 7 is
Can be electrically connected very strongly via the bonding wires 8.

In particular, the film 6 made of the fluorine-based surfactant has a critical surface tension of 25 dyn of the fluorine-based surfactant.
/ Cm or less, and a perfluoroalkylammonium neutralized product [CF _3- (CF ₂ ) _n -N (CF ₃ ) ₃ ]
⁺ Cl- ^and other perfluoroalkyl groups CF _3- (C
The fluorine-based surfactant having F ₂ ) _n (n = natural number) has an extremely low critical surface tension of 20 dyn / cm or less and is extremely excellent in water repellency. Therefore, the insulating substrate 1 is placed in an atmosphere containing a large amount of moisture. Even if the concave portion 1a of the insulating substrate 1
Water or the like does not adhere to the exposed surface including the bottom surface, and when the semiconductor element 3 is bonded and fixed to the bottom surface of the concave portion 1a of the insulating base 1 via the resin adhesive 5, a part of the resin adhesive 5 is formed. Spreads greatly on the bottom surface of the concave portion 1a of the insulating base 1 and does not travel along the side surface of the concave portion 1a and crawl around the concave portion 1a.

The coating 6 made of the fluorine-based surfactant is applied to the surface of the insulation base 1 by immersing the insulating base 1 in a liquid fluorine-based surfactant, for example, by coating 1% on the surface of the insulation base.
It is deposited to a thickness of about 00 angstroms.

A plurality of metallized wiring layers 7 are formed on the insulating substrate 1 from the periphery of the concave portion 1a to the outer peripheral edge thereof. Each electrode of the element 3 is electrically connected via a bonding wire 8, and an external lead terminal 9 is soldered and attached to a portion led out to the outer peripheral edge of the insulating base 1 via a brazing material.

The metallized wiring layer 7 provided on the insulating base 1 functions to electrically connect the electrodes of the semiconductor element 3 to the external lead terminals 9 connected to an external electric circuit. For example, tungsten, molybdenum, manganese And the like.

The metallized wiring layer 7 is obtained by adding a suitable organic solvent and a solvent to a high melting point metal powder such as tungsten or molybdenum to obtain a metal paste, and applying the metal paste to a thick film method such as a conventionally known screen printing method. By applying a predetermined pattern on a ceramic green sheet serving as the insulating substrate 1 in advance by printing, the insulating green substrate 1 is adhered and formed from the periphery of the concave portion 1a to the outer peripheral edge.

On the exposed surface of the metallized wiring layer 7, a metal having excellent corrosion resistance such as nickel and gold and having good wettability with a brazing material is applied by plating to a thickness of 1 μm to 20 μm.
In this case, the metallized wiring layer 7 can be effectively prevented from being oxidized and corroded, and the metallized wiring layer 7 and the bonding wires 8 and the external lead terminals 9 can be effectively prevented.
Can be made firmly. Therefore, it is preferable that the metallized wiring layer 7 is coated with a metal having excellent corrosion resistance such as nickel and gold and a good wettability with a brazing material to a thickness of 1 μm to 20 μm by a plating method on the exposed surface. .

The external lead terminals 9 brazed to the metallized wiring layer 7 serve to electrically connect each electrode of the semiconductor element 3 to an external electric circuit. For example, an iron-nickel-cobalt alloy or an iron-nickel It is formed of a metal material such as a nickel alloy.

The external lead terminals 9 are formed into a predetermined shape by subjecting an ingot such as an iron-nickel-cobalt alloy to a conventionally known metal working method such as a rolling method or a punching method. Is done.

The external lead terminals 9 may be provided with a metal having excellent conductivity and corrosion resistance made of nickel, gold, or the like and having a thickness of 1 μm to 20 μm by plating. The oxidation corrosion of the terminal 9 can be effectively prevented, and the electrical connection between the external lead terminal 9 and the external electric circuit can be made good. Therefore, it is preferable that nickel, gold, or the like be applied to the surface of the external lead terminal 9 in a thickness of 1 μm to 20 μm by plating.

On the other hand, a lid 2 is joined to the upper surface of the insulating base 1 via a sealing member made of brazing material, glass, resin, or the like. 2 to hermetically seal.

The lid 2 is made of an electric green material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, or a metal such as an iron-nickel-cobalt alloy or an iron-nickel alloy. When made of a material, for example, an aluminum oxide-based sintered body, a raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide is molded by employing a conventionally known press molding method, and is formed. It is formed by firing at a temperature of about 1500 ° C.

Thus, according to the package for accommodating a semiconductor element, the semiconductor element 3 is bonded and fixed to the bottom surface of the concave portion 1a of the insulating base 1 via the resin adhesive 5, and each electrode of the semiconductor element 3 is connected to the metallized wiring layer 7. The lid 2 is electrically connected via the bonding wire 8 and finally the lid 2 is joined to the upper surface of the insulating base 1 via a sealing member made of brazing material, glass, resin, or the like. A semiconductor device as a final product is obtained by hermetically housing the semiconductor element 3 in the container 4 made of.

The present invention is not limited to the above-described embodiment, and various changes can be made without departing from the gist of the present invention.

[0027]

According to the package for housing a semiconductor device of the present invention, a fluorine-based surfactant, particularly a fluorine-based surfactant having a perfluoroalkyl group, is provided on at least the surface of the insulating base on which the semiconductor device is mounted. The fluorine-based surfactant has a critical surface tension of 25 dyn / cm or less, and the fluorine-based surfactant having a perfluoroalkyl group has a critical surface tension of 20 dyn / c.
m and extremely low water repellency, so that even if the insulating substrate is placed in an atmosphere containing a large amount of water, moisture adheres to the semiconductor element mounting portion of the insulating substrate. And the semiconductor element mounting portion of the insulating base does not become hydrophilic. As a result, the semiconductor element is bonded and fixed to the semiconductor element mounting portion of the insulating base via a resin adhesive. In this case, the resin adhesive greatly spreads around the semiconductor element mounting portion, and effectively prevents the metallized wiring layer formed on the semiconductor element mounting portion from being coated, thereby effectively preventing each electrode of the semiconductor element from being covered. It becomes possible to make an extremely strong electrical connection to a predetermined metallized wiring layer via a bonding wire.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment of a semiconductor element storage package according to the present invention.

2 is an enlarged cross-sectional view of a main part of the package for housing a semiconductor element shown in FIG. 1;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 1a ... Depression 2 ... Lid 3 ... Semiconductor element 4 ... Container 5 ... Resin Adhesive 6 Fluorosurfactant film 7 Metallized wiring layer 9 External lead terminals

Claims (2)

[Claims] 1. A semiconductor element comprising: a mounting portion on which a semiconductor element is mounted; an insulating base on which a plurality of metallized wiring layers are applied from the periphery of the mounting portion to an outer surface; and a lid. A semiconductor element housing package in which a semiconductor element is bonded and fixed to a mounting portion via a resin adhesive and a lid body is joined to an insulating base, and the semiconductor element is hermetically housed in a container including the insulating base and the lid body. So,
A package for accommodating a semiconductor element, wherein a film made of a fluorine-based surfactant is applied to at least a surface of the insulating element base on a semiconductor element mounting portion. 2. The package for accommodating a semiconductor element according to claim 1, wherein the fluorine-based surfactant forming the film has a perfluoroalkyl group.