JPH11204594A - Inspection apparatus for semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To mark a chip selected from defectives in an inspection process, without adding a new process by adding a component which is color-changed by light to a protective film or a buffer film originally formed onto a wager surface. SOLUTION: An insulating film 2 and an aluminum wiring 5 are formed on an Si substrate 1, and a protective film 3 or a buffer film 4 are shaped onto the uppermost surface of a wafer. A laser color former is added to the component of the protective film 3 or the buffer film 4 formed onto the wafer uppermost surface, and a thin-film on the water uppermost surface is formed. An inorganic chloride to be added as the laser color former is not limited in particular, but phosphorous chloride can be used. The protective film 3 is not limited inparticula, but SiO2 may be employed. The buffer film 4 is not limited in particula, but a polyimide resin may be used. Accordingly, a chip selected from defective in an inspection process and be marked by light without adding a new process.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for inspecting a semiconductor device.

[0002]

2. Description of the Related Art As a conventional general method of marking a defective chip selected in a semiconductor device inspection process, an ink is applied to a protective film formed on the surface of a semiconductor device by an ink application device. How to hit
There is a marking method in which a protective film formed on the surface of a semiconductor device is irradiated with strong laser light to break an aluminum pattern formed on the semiconductor device.

[0003] As a method of performing marking with ink, there is an example disclosed in JP-A-59-39935. In this example, marking is performed with a uniform amount of ink, and a defective mark having a uniform diameter and a uniform density can always be attached to a defective chip.

[0004] As a method of performing marking with a laser, there is an example in Japanese Patent Application Laid-Open No. 57-102038.
In this example, the amount of scattering of the metal wiring layer can be reduced by performing laser marking with a plurality of laser beams.

[0005]

In the marking using ink, it is necessary to control the viscosity of the ink itself.
This management is very time-consuming. In addition, when ink runs out or ink splashing occurs, it is necessary to perform reprocessing, which is inefficient. In addition, depending on the type of ink, a process of curing the ink by UV irradiation or drying after ink application is required. Further, when processing the wafer after ink application, there is a problem that the wafer is damaged due to the height of the ink itself.

[0006] In the marking by laser, a chip on which marking has been performed is destroyed, so that re-sorting after marking or failure analysis cannot be performed. In addition, when the aluminum pattern is scattered at the time of marking and adheres to an adjacent good chip, there may be a case where a problem concerning quality is caused.

[0007]

According to a first aspect of the present invention, there is provided a method for inspecting a semiconductor device according to the first aspect of the present invention, wherein a component discolored by light is added to a protective film or a buffer film originally formed on a wafer surface. It is characterized by doing.

(Means 2) A semiconductor device inspection method according to a second aspect of the present invention is characterized in that a defective chip selected in a semiconductor device inspection process is marked by irradiating light. I do.

(Means 3) A semiconductor inspection method according to claim 1 is characterized in that claim 2 is simultaneously satisfied.

[0010]

According to the semiconductor device inspection method of the means 1,
Since a component that changes color due to light is added to an existing protective film or buffer film, it is possible to mark a chip that has been determined to be defective in the inspection process without adding a new process. Further, the height of the marking itself can be eliminated.

According to the method for inspecting a semiconductor device by the means 2, since a substance such as ink is not applied to the surface of the wafer, it is not necessary to manage the viscosity of the ink or the like and to perform reprocessing such as ink shortage or ink splash.

According to the method of inspecting a semiconductor device by means 3, the contents of means 1 and means 2 are simultaneously satisfied,
Efficient and non-destructive marking is possible.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. FIG. 1 is a schematic sectional view showing the structure of the wafer surface.
In FIG. 1, 1 is a Si substrate, 2 is an insulating film, 3 is a protective film, 4 is a buffer film, and 5 is aluminum (PAD opening).

After forming the insulating film 2 and the aluminum wiring 5 on the Si substrate 1, a protective film 3 or a buffer film 4 is formed on the outermost surface of the wafer. Generally, when used in the form of a package, the buffer film 4 is formed on the outermost surface of the wafer, and when used in the form of a chip, the protective film 3 is formed on the outermost surface of the wafer.

As one method of implementing the means 1, first, a laser coloring agent is added to the protective film 3 or the buffer film 4 formed on the outermost surface of the wafer to form a thin film on the uppermost surface of the wafer. Here, as the protective film 3, although not particularly limited, S
iO2 can be used. The buffer film 4 is not particularly limited, but a polyimide resin used as a buffer material in packaging can be used. The inorganic salt compound added as a laser coloring agent is not particularly limited, but a phosphite compound can be used. As described above, by adding a laser coloring agent to the existing protective film 3 or buffer film 4, it is possible to mark a chip that has been determined to be defective in the inspection process without adding a new process. Also,
Since the marking is performed by changing the color of the laser coloring agent added to the components of the protective film 3 or the buffer film 4 with light, it is necessary to perform the processing after the marking step due to the height of the marking itself, which is a problem when marking with ink. Risk of damage to the wafer can be avoided.

Next, an embodiment by means 2 is shown in FIG. FIG. 2 is a schematic perspective view showing one method of marking in the means 2. 2, reference numeral 6 denotes a semiconductor inspection apparatus, 7 denotes a laser oscillator, 8 denotes a lens, 9 denotes a stage of the semiconductor inspection apparatus, and 10 denotes a wafer.

In practice, a laser oscillator 7 is attached to the upper opening of the semiconductor inspection device 6, and the laser light output from the laser oscillator 7 is narrowed down by a lens 8 into a spot. The mounting location of the laser oscillator 7 is not limited to the upper opening of the semiconductor inspection device 6,
By using a reflecting mirror, it can be attached to an arbitrary part of the semiconductor inspection device 6. The size of the marking can be adjusted by making the lens 8 movable.

Although not particularly limited, a prober can be used as the semiconductor inspection device 6. The semiconductor inspection device 6 receives a signal indicating a non-defective product or a defective product as a test result from a semiconductor inspection device such as a tester, and for a defective product, controls the laser oscillator 7 to transmit the laser beam to the lens 8. To irradiate the corresponding chip of the wafer 10 on the stage 9 of the semiconductor inspection apparatus 6 to perform marking. One of the control methods of the laser oscillator 7 is to provide a shutter at the laser light output opening of the laser oscillator 7 so that the shutter can be closed for non-defective products and opened for defective products. As described above, marking using laser light eliminates the need to use ink, etc.
It is not necessary to manage the viscosity of the ink or the like and to perform reprocessing such as ink shortage or ink splashing. In addition, according to the means 2, there is an advantage that the semiconductor inspection device 6 used for marking with existing ink or laser marking can be used without modification by changing only the mounting jig.

Means 3 is a method for inspecting a semiconductor device having an embodiment according to the means 1 and an embodiment according to the means 2, and enables efficient and non-destructive marking using a laser beam.

[0020]

According to the method for inspecting a semiconductor device according to the first aspect, a component which changes its color by light is added to the existing protective film or buffer film, so that a defect is not generated in the inspection process without adding a new process. Marking by light can be performed on the selected chips. In addition, since the marking is performed by discoloring the component itself in the protective film or the buffer film, there is a risk of breakage of the wafer in the processing after the marking process due to the height of the marking itself, which is a problem when marking with ink. Sex can be avoided.

According to the method for inspecting a semiconductor device by the means 2, the thin film on the surface of the semiconductor device is illuminated with light, and a component that changes color due to the light contained in the thin film is reacted. In addition, problems such as ink management and ink shortage and ink splashing during application can be solved.

According to the method of inspecting a semiconductor device by the means 3, the effects of the means 1 and the means 2 can be realized at the same time. In the conventional laser marking, what has been marked by damaging the wafer surface with a laser beam is non-destructive. And efficient and clean marking is possible.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing the structure of a wafer surface.

FIG. 2 is a schematic perspective view showing one method of marking in the means 2;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Si base plate 2 Insulating film 3 Protective film 4 Buffer film 5 Aluminum (PAD opening) 6 Semiconductor inspection device 7 Laser oscillator 8 Lens 9 Semiconductor inspection device stage 10 Wafer

Claims (3)

[Claims] 1. A method for inspecting a semiconductor device, comprising adding a component which changes color by light to a protective film or a buffer film originally formed on a wafer surface. 2. A method of inspecting a semiconductor device, comprising irradiating a defective chip selected in a semiconductor device inspection step with light to perform marking. 3. The method for inspecting a semiconductor device according to claim 1, wherein the method of claim 2 is satisfied.