JPH11195649A - Valve device - Google Patents
Valve deviceInfo
- Publication number
- JPH11195649A JPH11195649A JP9085098A JP9085098A JPH11195649A JP H11195649 A JPH11195649 A JP H11195649A JP 9085098 A JP9085098 A JP 9085098A JP 9085098 A JP9085098 A JP 9085098A JP H11195649 A JPH11195649 A JP H11195649A
- Authority
- JP
- Japan
- Prior art keywords
- valve
- flow path
- cleaning liquid
- raw material
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、開閉弁の洗浄方法
及びその装置に係り、特に、チタン酸バリウム／ストロ
ンチウム等の高誘電体又は強誘電体薄膜を基板上に気相
成長させる薄膜気相成長装置に使用される開閉弁の内部
を洗浄するのに使用して最適な開閉弁の洗浄方法及びそ
の装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for cleaning an on-off valve, and more particularly, to a thin film vapor phase for growing a high dielectric or ferroelectric thin film such as barium / strontium titanate on a substrate. The present invention relates to an on-off valve cleaning method and apparatus optimal for cleaning the inside of an on-off valve used in a growth apparatus.
【０００２】[0002]
【従来の技術】近年、半導体産業における集積回路の集
積度の向上はめざましく、現状のメガビットオーダか
ら、将来のギガビットオーダを睨んだＤＲＡＭの研究開
発が行われている。かかるＤＲＡＭの製造のためには、
小さな面積で大容量が得られるキャパシタ素子が必要で
ある。このような大容量素子の製造に用いる誘電体薄膜
として、誘電率が１０以下であるシリコン酸化膜やシリ
コン窒化膜に替えて、誘電率が２０程度である五酸化タ
ンタル(Ｔa2Ｏ5) 薄膜、あるいは誘電率が３００程度で
あるチタン酸バリウム(ＢaＴiＯ3) 、チタン酸ストロン
チウム(ＳrＴiＯ3）又はこれらの混合物であるチタン酸
バリウムストロンチウム等の金属酸化物薄膜材料が有望
視されている。また、さらに誘電率が高いＰＺＴ、ＰＬ
ＺＴ、Ｙ１等の強誘電体の薄膜材料も有望視されてい
る。2. Description of the Related Art In recent years, the degree of integration of integrated circuits in the semiconductor industry has been remarkably improved, and research and development of DRAMs from the current megabit order to the future gigabit order have been conducted. To manufacture such a DRAM,
A capacitor element that can obtain a large capacity with a small area is required. As a dielectric thin film used for manufacturing such a large-capacity element, tantalum pentoxide (Ta 2 O 5 ) having a dielectric constant of about 20 is used instead of a silicon oxide film or a silicon nitride film having a dielectric constant of 10 or less. Promising are thin films or metal oxide thin film materials such as barium titanate (BaTiO 3 ), strontium titanate (SrTiO 3 ) having a dielectric constant of about 300, or barium strontium titanate which is a mixture thereof. Further, PZT, PL having a higher dielectric constant
Promising also are ferroelectric thin film materials such as ZT and Y1.
【０００３】ところで、このような素材の成膜を行う方
法として、化学気相成長（ＣＶＤ）が有望とされてお
り、この場合、最終的に成膜室内で原料ガスを被成膜基
板に安定的に供給する必要がある。原料ガスは、常温で
固体のＢａ（ＤＰＭ）2、Ｓｒ（ＤＰＭ）2 などを液状
化し、さらに気化特性を安定化させるために有機溶剤
（例えばＴＨＦなど）を混合させたものを気化器で加熱
し気化することによって生成される。この種の気化器に
おいては、気化器で液体（液体原料）を気化する際に、
金属との化合物や中間生成物等が生成される。As a method for forming a film of such a material, chemical vapor deposition (CVD) is promising. In this case, a source gas is finally supplied to a film-forming substrate in a film-forming chamber. Need to be supplied. The raw material gas is obtained by liquefying Ba (DPM) 2 , Sr (DPM) 2, and the like at room temperature, and further heating an organic solvent (eg, THF) mixed with a vaporizer to stabilize the vaporization characteristics. It is produced by vaporization. In this type of vaporizer, when a liquid (liquid raw material) is vaporized by the vaporizer,
Compounds with metal, intermediate products and the like are produced.
【０００４】このような薄膜気相成長装置においては、
気化器で気化させた原料ガスを成膜室に供給する原料ガ
ス供給流路の途中に、トラップ装置を有するバイパス流
路を開閉弁によって切り換え可能に設けている。これ
は、成膜工程が終わった時や、気化器の気化状態が安定
するまでの原料ガスをこのバイパス流路に流し、トラッ
プ装置で原料ガスの成分をトラップして回収してから排
出するものである。[0004] In such a thin film vapor phase growth apparatus,
A bypass flow path having a trap device is provided in the source gas supply flow path for supplying the raw material gas vaporized by the vaporizer to the film formation chamber so as to be switchable by an on-off valve. In this method, the source gas is passed through this bypass channel until the vaporization state of the vaporizer is stabilized after the film formation process is completed, and the components of the source gas are trapped and collected by a trap device and then discharged. It is.
【０００５】[0005]
【発明が解決しようとする課題】ところで、この種の原
料ガスは気化させることが一般に困難でありかつ反応性
が高いので、気化器の２次側に未気化物や反応生成物が
流出してしまうことが多い。従って、図５に示すよう
に、この未気化物や反応生成物が弁シート１２や弁体１
４に付着したり、合わせ面を傷つけ、開閉弁の機能を劣
化させるという問題があった。このことは、図示のベロ
ーズタイプのものに限らず、ダイヤフラムタイプ等の他
の開閉弁にあっても同様である。However, since this kind of raw material gas is generally difficult to vaporize and has high reactivity, unvaporized substances and reaction products flow out to the secondary side of the vaporizer. It often happens. Therefore, as shown in FIG. 5, the unvaporized product and the reaction product form the valve seat 12 and the valve element 1.
4 or damage the mating surface, deteriorating the function of the on-off valve. This is not limited to the bellows type shown in the figure, but is also applicable to other on-off valves such as a diaphragm type.
【０００６】なお、開閉弁を保温して付着を防ぐことも
考えられるが、加熱が不完全で温度が低下した場合に
は、弁体内で原料ガスの再凝縮が発生し、また、加熱し
過ぎると原料ガスが変質して付着してしまうという問題
がある。Although it is conceivable to prevent the adhesion by keeping the on-off valve warm, if the heating is incomplete and the temperature drops, recondensation of the raw material gas occurs in the valve body and the heating is excessive. Then, there is a problem that the raw material gas is altered and adheres.
【０００７】本発明は上記に鑑み、例え未気化物や反応
生成物を伴った流体が流れても、開閉弁の内部を容易か
つ確実に洗浄して、この機能が劣化してしまうのを防止
するようにした弁装置を提供することを目的とする。In view of the above, the present invention easily and reliably cleans the inside of the on-off valve even if a fluid containing unvaporized substances or reaction products flows, thereby preventing the function from deteriorating. It is an object of the present invention to provide a valve device that performs the above-described operation.
【０００８】[0008]
【課題を解決するための手段】請求項１に記載の発明
は、固形物を析出しやすい原料ガスの流路を開閉するた
めの弁装置において、弁体と弁シートの間の隙間に向け
てパージガスを供給するパージガス供給ポート、及び／
又は、弁体の近傍より原料ガスの上流側及び下流側の少
なくとも一方の流路に向けて洗浄液を供給する洗浄液供
給ポートが設けられていることを特徴とする弁装置であ
る。According to a first aspect of the present invention, there is provided a valve device for opening and closing a flow path of a raw material gas from which solid matter is easily deposited, wherein the flow path is directed toward a gap between a valve body and a valve seat. A purge gas supply port for supplying a purge gas, and / or
Alternatively, there is provided a valve device provided with a cleaning liquid supply port for supplying a cleaning liquid from at least one flow path on the upstream side and the downstream side of the raw material gas from the vicinity of the valve element.
【０００９】これにより、弁シートや弁体に付着した固
形物をガスで気化促進させ、あるいは吹き飛ばして、ま
たは洗浄液で洗い流してバルブシート面から除去してか
ら弁を閉じるので、固形物を挟み込んだ状態で弁が閉じ
られることによるシール不良や弁シートの傷の発生が防
止される。また、弁体の近傍より洗浄液を流すことで弁
体の近傍に堆積した固形物を洗浄して、次に弁装置が開
いた時に固形物によるシール不良や弁シートの傷の発生
が防止される。[0009] Thus, the solid matter adhering to the valve seat or the valve body is promoted to be vaporized by gas, or is blown off, or is washed away with a cleaning liquid and removed from the valve seat surface, and then the valve is closed. Insufficient sealing and damage to the valve seat caused by closing the valve in this state are prevented. Further, by flowing a cleaning liquid from the vicinity of the valve body, the solid matter deposited near the valve body is washed, and when the valve device is next opened, poor sealing due to the solid matter and damage to the valve seat are prevented. .
【００１０】請求項２に記載の発明は、固形物を析出し
やすい原料ガスの流路を開閉するための開閉弁を操作す
る際に、前記開閉弁を閉じる直前に弁体と弁シートの間
の隙間に向けてパージガス又は洗浄液を供給する工程を
行なうことを特徴とする開閉弁の洗浄方法である。[0010] According to a second aspect of the present invention, when the on-off valve for opening and closing the flow path of the source gas from which solids are liable to precipitate is operated, the gap between the valve element and the valve seat immediately before the on-off valve is closed. A step of supplying a purge gas or a cleaning liquid toward a gap between the on-off valve and the on-off valve.
【００１１】請求項３に記載の発明は、前記開閉弁を閉
じた後に弁体の近傍より少なくとも一方の流路に向けて
洗浄液あるいはキャリアガスを供給する工程を行なうこ
とを特徴とする請求項２に記載の開閉弁の洗浄方法であ
る。これにより、弁体の近傍に堆積した固形物を洗浄し
て、次に弁装置が開いた時に固形物によるシール不良や
弁シートの傷の発生が防止される。また、片側に洗浄
液、反対側にキャリアガスを流すことで、洗浄を実施し
ながら気化を促進させることができる。According to a third aspect of the present invention, after the on-off valve is closed, a step of supplying a cleaning liquid or a carrier gas from at least one of the flow paths from the vicinity of the valve body is performed. 4. The method for cleaning an on-off valve according to (1). As a result, the solid matter deposited near the valve body is washed, and the next time the valve device is opened, poor sealing due to the solid matter and damage to the valve seat are prevented. Further, by flowing a cleaning liquid on one side and a carrier gas on the other side, vaporization can be promoted while performing cleaning.
【００１２】請求項４に記載の発明は、所定の気化圧力
及び気化温度において液体原料流路から供給された液体
原料を気化して原料ガス流路に送る気化器と、前記原料
ガス流路を開閉する開閉弁と、弁体の近傍より原料ガス
流路の上流側に向けて洗浄液タンクから洗浄液を供給す
る洗浄液供給ポートと、前記液体原料流路から分岐して
切換可能に設けられて前記洗浄液タンクに繋がる洗浄液
ベント流路とを有することを特徴とする気化装置であ
る。これにより、弁体とガス流路及びその上流の気化器
に洗浄液を流してこれらを一括して洗浄する洗浄流路が
形成される。According to a fourth aspect of the present invention, there is provided a vaporizer for vaporizing a liquid raw material supplied from a liquid raw material flow path at a predetermined vaporization pressure and a predetermined vaporization temperature and sending the liquid raw material to a raw material gas flow path; An on-off valve for opening and closing; a cleaning liquid supply port for supplying a cleaning liquid from a cleaning liquid tank from a vicinity of a valve body to an upstream side of a raw material gas flow path; A vaporizer comprising: a cleaning liquid vent flow path connected to a tank. As a result, a cleaning flow path is formed in which the cleaning liquid is caused to flow through the valve element, the gas flow path, and the vaporizer upstream thereof to collectively clean them.
【００１３】[0013]
【発明の実施の形態】以下、本発明の実施の形態を図面
を参照して説明する。図１は、例えば液状のＢａ（ＤＰ
Ｍ）2，Ｓｒ（ＤＰＭ）2等を有機溶剤（例えばＴＨＦな
ど）中に溶解させた液体原料を気化器２０で気化させて
原料ガスを生成し、このガス原料と酸素含有ガスとを混
合させつつ、成膜室（反応室）２２内で一定の温度に加
熱した基板に噴射して、この基板上に金属酸化物薄膜を
気相成長させる成膜システムを示すものである。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows, for example, liquid Ba (DP
M) 2 , Sr (DPM) 2 and the like are dissolved in an organic solvent (for example, THF) and a liquid raw material is vaporized by the vaporizer 20 to generate a raw material gas, and the raw material gas is mixed with an oxygen-containing gas. 1 shows a film forming system in which a metal oxide thin film is vapor-phase grown on a substrate heated at a constant temperature in a film forming chamber (reaction chamber) 22 on the substrate.
【００１４】気化器２０には、上流側の液体原料源に繋
がる液体原料流路２６と、液体原料をその気化温度以上
に加熱するヒータ２４が設けられている。また、下流側
には、気化した原料ガスを排出する原料ガス流路２８が
設けられ、これは気化器２０の下流で開閉弁３２ａ、成
膜室２２及びトラップ３６ａに繋がる成膜流路２９と、
開閉弁３２ｂ、トラップ装置３６ｂを有するバイパス流
路３０に分岐し、それぞれに設けた開閉弁３２ｃ，３２
ｄの下流で再度合流してポンプ３８に繋がっている。こ
れらの原料ガス流路２８、成膜流路２９及び該流路２８
バイパス流路３０の周囲には、これらを流れる原料ガス
の温度を一定に保温するヒータ４０が配置されている。The vaporizer 20 is provided with a liquid source passage 26 connected to the liquid source on the upstream side, and a heater 24 for heating the liquid source to a temperature equal to or higher than its vaporization temperature. Further, on the downstream side, a source gas flow path 28 for discharging the vaporized source gas is provided. This is provided with a film forming flow path 29 connected to the on-off valve 32a, the film forming chamber 22, and the trap 36a downstream of the vaporizer 20. ,
The on-off valve 32b branches off into a bypass flow path 30 having a trap device 36b, and the on-off valves 32c and 32 provided on the respective bypass flow paths 30 are provided.
It joins again downstream of d and is connected to the pump 38. These source gas flow path 28, film formation flow path 29, and flow path 28
Around the bypass passage 30, a heater 40 for keeping the temperature of the raw material gas flowing therethrough constant is arranged.
【００１５】トラップ装置３６ａ，３６ｂは、この例に
おいては、液体窒素のような液体または冷却された空気
等の冷却用熱媒体を流通させることにより、原料ガスの
成分をトラップ部に付着させてこれを排ガスから除去す
る低温トラップであり、各トラップには、図示しない熱
媒体供給源に接続された冷却媒体供給流路及び排出流路
がそれぞれ備えられている。なお、トラップ装置の構造
はこれに限られるものではない。In this example, the trap devices 36a and 36b allow the components of the source gas to adhere to the trap portion by flowing a cooling medium such as a liquid such as liquid nitrogen or cooled air. Is a low-temperature trap that removes water from exhaust gas. Each of the traps is provided with a cooling medium supply channel and a discharge channel connected to a heat medium supply source (not shown). The structure of the trap device is not limited to this.
【００１６】成膜流路２８内に設置された開閉弁３２
ａ、及びバイパス流路３０内に設置された開閉弁３２ｂ
には、洗浄液タンク４４からポンプ５８を経由して延び
る洗浄液供給流路４２が接続されている。この洗浄液供
給流路４２は、ポンプ５８の下流で２つの分岐流路４６
ａ，４６ｂに分岐し、この各分岐流路４６ａ，４６ｂは
それぞれ開閉弁３２ｄ，３２ｅを介して各開閉弁３２
ａ，３２ｂの１次側に設けられた洗浄液ポート４９ａ，
４９ｂにそれぞれ接続されている。各開閉弁３２ａ，３
２ｂには、各洗浄液ポート４９ａ，４９ｂに近接してガ
ス注入ポート４８ａ，４８ｂが設けられ、これにはＡｒ
等のパージガス源に接続されたガス流路５０ａ，５０ｂ
がそれぞれ接続されている。The on-off valve 32 installed in the film forming channel 28
a, and an on-off valve 32b installed in the bypass passage 30
Is connected to the cleaning liquid supply flow path 42 extending from the cleaning liquid tank 44 via the pump 58. The cleaning liquid supply flow path 42 is provided with two branch flow paths 46 downstream of the pump 58.
a, 46b, and the respective branch flow paths 46a, 46b are connected to the respective on-off valves 32d, 32e via the on-off valves 32d, 32e, respectively.
a, a cleaning liquid port 49a provided on the primary side of 32b,
49b. Each on-off valve 32a, 3
2b is provided with gas injection ports 48a, 48b adjacent to the respective cleaning liquid ports 49a, 49b,
Gas flow paths 50a, 50b connected to a purge gas source such as
Are connected respectively.
【００１７】洗浄液タンク４４内には、例えばテトラヒ
ドロフラン（ＴＨＦ）からなる洗浄液５２が貯留されて
いるとともに、この洗浄液５２を加温するヒータ５４
と、洗浄液５２の液面をＨｅガス等のガスで加圧する加
圧装置５６が備えられている。また、洗浄液供給流路４
２には、洗浄液５２を加圧しながら順次送り出すポンプ
５８が設置されている。A cleaning liquid 52 made of, for example, tetrahydrofuran (THF) is stored in the cleaning liquid tank 44, and a heater 54 for heating the cleaning liquid 52 is provided.
And a pressurizing device 56 for pressurizing the liquid level of the cleaning liquid 52 with a gas such as He gas. Further, the cleaning liquid supply flow path 4
2 is provided with a pump 58 for sequentially feeding the cleaning liquid 52 while pressurizing the same.
【００１８】加圧装置５６は、洗浄液５２をその蒸気圧
以上に加圧して常に液体状態で開閉弁３２ａ，３２ｂの
内部に供給するために設けられ、ポンプ５８のみで洗浄
液５２をこの蒸気圧以上に加圧できるような場合には必
ずしも必要ではない。しかしながら、加圧装置５６を備
えることによって、ポンプ５８の吸込み側で低圧となっ
て、洗浄液５２がポンプ５８の吸込み側で一部で気化し
てしまうことを防止することができる。もちろん、洗浄
領域の出口末端部に蒸気圧以上のクラッキング圧の逆止
弁を設け、洗浄領域内に圧力を掛けるようにしてもよ
い。The pressurizing device 56 is provided to pressurize the cleaning liquid 52 to a pressure higher than its vapor pressure and to always supply the cleaning liquid 52 in a liquid state to the inside of the on-off valves 32a, 32b. It is not always necessary when the pressure can be increased. However, the provision of the pressurizing device 56 can prevent the cleaning liquid 52 from being partially vaporized on the suction side of the pump 58 due to a low pressure on the suction side of the pump 58. Of course, a check valve having a cracking pressure equal to or higher than the vapor pressure may be provided at the outlet end of the cleaning area to apply pressure in the cleaning area.
【００１９】更に、気化器２０のすぐ上流側の原料供給
流路２６から分岐して洗浄液タンク４４に連絡する洗浄
液ベント流路６０が設けられている。このベント流路６
０には開閉弁３２ｆが設けられ、また、原料供給流路２
６の分岐点の上流側には開閉弁３２ｇが設けられてい
る。Further, there is provided a cleaning liquid vent flow path 60 which branches off from the raw material supply flow path 26 immediately upstream of the vaporizer 20 and communicates with the cleaning liquid tank 44. This vent channel 6
0 is provided with an on-off valve 32f.
An on-off valve 32g is provided upstream of the branch point of No. 6.
【００２０】以下、この実施の形態の洗浄システムの作
用を説明する。成膜を行う時には、成膜流路２８内の切
換弁３２ａを開き、バイパス流路３０内の切換弁３２ｂ
を閉じて原料ガスを成膜室２２内に導く。成膜を行って
いない時や気化状態が安定するまでの間は、成膜流路２
８内の切換弁３２ａを閉じ、バイパス流路３０内の切換
弁３２ｂを開いて原料ガスをバイパス流路３０内に導
く。成膜室２２から排気流路３４、トラップ装置３６ａ
を経由した処理ガスと、バイパス流路３０内をトラップ
装置３６ｂを経由して流れた原料ガスは、それぞれ合流
して排気ポンプ３８から外部に排気される。The operation of the cleaning system according to this embodiment will be described below. When performing the film formation, the switching valve 32a in the film forming flow path 28 is opened, and the switching valve 32b in the bypass flow path 30 is opened.
Is closed and the source gas is introduced into the film forming chamber 22. When the film is not formed or until the vaporized state is stabilized, the film forming flow path 2
8, the switching valve 32a in the bypass passage 30 is opened, and the source gas is guided into the bypass passage 30 by opening the switching valve 32b in the bypass passage 30. From the film forming chamber 22 to the exhaust passage 34, the trap device 36a
And the source gas flowing through the bypass passage 30 via the trap device 36b are merged and exhausted from the exhaust pump 38 to the outside.
【００２１】これらの過程において、開閉弁３２ａ，３
２ｂの内部には原料ガスが流れ、この原料ガス中の未気
化成分や反応生成物が、弁シート６２や弁体６４に付着
する。従って、以下に説明するように、開閉弁３２ａ，
３２ｂに対するこれらの物質の付着防止及び洗浄工程を
行なう。In these processes, the on-off valves 32a, 3
A raw material gas flows inside 2b, and unvaporized components and reaction products in the raw material gas adhere to the valve sheet 62 and the valve body 64. Therefore, as described below, the on-off valves 32a,
A step of preventing the adhesion of these substances to 32b and a cleaning step is performed.
【００２２】先ず、開閉弁３２ａ，３２ｂを閉じる直前
に、各分岐流路４６ａ，４６ｂ内の開閉弁３２ｄ，３２
ｅを閉じた状態で、図２に示すように、各ポート４８
ａ，４８ｂを開いて加熱したＡｒガス等のパージガスあ
るいは洗浄液を注入し、開閉弁３２ａ，３２ｂの弁シー
ト６２と弁体６４との間に付着した付着物を除去する。
その後に、開閉弁３２ａ，３２ｂを閉じるが、弁シート
６２と弁体６４に付着した付着物が除去されているた
め、バルブシール面の損傷を防止して、シール性を維持
することができる。First, immediately before closing the on-off valves 32a and 32b, the on-off valves 32d and 32d in the respective branch passages 46a and 46b are closed.
e, with each port 48 closed, as shown in FIG.
A purge gas such as Ar gas or a cleaning liquid heated by opening a and 48b is injected to remove deposits adhered between the valve sheet 62 and the valve body 64 of the on-off valves 32a and 32b.
Thereafter, the on-off valves 32a and 32b are closed. However, since the deposits attached to the valve seat 62 and the valve body 64 have been removed, damage to the valve sealing surface can be prevented, and the sealing performance can be maintained.
【００２３】次に、各ポート４８ａ，４８ｂを閉じ、ポ
ンプ５８を駆動させ、同時に各分岐流路４６ａ，４６ｂ
内の開閉弁３２ｄ，３２ｅと洗浄液ポート４９ａ，４９
ｂを開く。これにより、図３に示すように、ポンプ５８
と加圧装置５６を介して加圧された洗浄液５２を開閉弁
３２ａ，３２ｂの１次側に流入させる。そして、洗浄液
ベント流路６０内の開閉弁３２ｆを開いて、洗浄液５２
を気化器２０から洗浄液ベント流路６０内に循環させ
る。この時、洗浄液５２は、気化しないように加圧され
ているので、液体のまま開閉弁３２ａ，３２ｂから気化
器２０に流れ、これらの内部の付着物を溶解させて効率
的に洗浄する。洗浄液タンク４４のヒータ５４で洗浄液
５２を加温することにより、付着物の溶解速度及び飽和
溶解度を高めて、洗浄効果を高めることができる。Next, the ports 48a, 48b are closed, the pump 58 is driven, and at the same time, the respective branch flow paths 46a, 46b
On-off valves 32d, 32e and cleaning liquid ports 49a, 49
Open b. As a result, as shown in FIG.
And the cleaning liquid 52 pressurized through the pressurizing device 56 flows into the primary side of the on-off valves 32a and 32b. Then, the on-off valve 32f in the cleaning liquid vent flow path 60 is opened, and the cleaning liquid 52 is opened.
Is circulated from the vaporizer 20 into the cleaning liquid vent flow path 60. At this time, since the cleaning liquid 52 is pressurized so as not to vaporize, the cleaning liquid 52 flows from the on-off valves 32a and 32b to the vaporizer 20 as liquid, and dissolves the deposits inside the liquid, thereby efficiently cleaning the liquid. By heating the cleaning liquid 52 with the heater 54 of the cleaning liquid tank 44, the dissolution rate and the saturation solubility of the deposits can be increased, and the cleaning effect can be enhanced.
【００２４】そして、ポンプ５８を停止させるととも
に、分岐流路４６ａ，４６ｂの開閉弁３２ｄ，３２ｅを
閉じ、しかる後、ガス注入ポート４８ａ，４８ｂを開い
てガス注入流路５０ａ，５０ｂからパージガスを導入
し、これによって、開閉弁３２ａ，３２ｂから気化器２
０内の洗浄液５２を全て洗浄液タンク４４に回収して、
洗浄を完了する。これにより、気化器２０、原料ガス供
給流路２６及びバイパス流路３０を含む流路と、開閉弁
３２ａ，３２ｂの弁シート６２と弁体６４が清浄化され
る。Then, the pump 58 is stopped, and the on-off valves 32d and 32e of the branch passages 46a and 46b are closed. Thereafter, the gas injection ports 48a and 48b are opened to introduce a purge gas from the gas injection passages 50a and 50b. Thereby, the carburetor 2 is connected to the on-off valves 32a and 32b.
All the cleaning liquid 52 in 0 is collected in the cleaning liquid tank 44,
Complete the wash. Thereby, the flow path including the vaporizer 20, the raw material gas supply flow path 26, and the bypass flow path 30, and the valve seats 62 and the valve bodies 64 of the on-off valves 32a and 32b are cleaned.
【００２５】何回かの洗浄を繰り返し、所定の量の原料
ガスが溶解すると、洗浄液の堆積も増えて洗浄能力が低
下するので、洗浄液を交換する。液換えのタイミング
は、洗浄液の容積、質量、比重、光の透過量、誘電率、
粘度等の種々のパラメータの変化により検知することが
できる。When the cleaning is repeated several times and a predetermined amount of the raw material gas is dissolved, the deposition of the cleaning liquid also increases and the cleaning ability decreases, so the cleaning liquid is replaced. The timing of liquid change depends on the volume, mass, specific gravity, light transmission amount, dielectric constant,
It can be detected by changes in various parameters such as viscosity.
【００２６】なお、上記の実施の形態においては、開閉
弁の吸込側にガス及び洗浄液を導入するようにした例を
示しているが、必要に応じて、図４に示すように、開閉
弁の排気側にガス及び洗浄液を導入するようにしても良
い。In the above embodiment, an example is shown in which gas and cleaning liquid are introduced into the suction side of the on-off valve. However, if necessary, as shown in FIG. Gas and cleaning liquid may be introduced to the exhaust side.
【００２７】[0027]
【発明の効果】以上説明したように、本発明によれば、
弁シートや弁体に付着した固形物をガスで吹き飛ばして
バルブシート面から除去してから弁を閉じるので、固形
物を挟み込んだ状態で弁が閉じられることによるシール
不良や弁シートの傷の発生が防止され、また、弁体の近
傍より洗浄液を流すことで弁体の近傍に堆積した固形物
を洗浄して、次に弁装置が開いた時に固形物によるシー
ル不良や弁シートの傷の発生が防止される。従って、例
え未気化物や反応生成物を伴った流体が流れても、開閉
弁の内部を容易かつ確実に洗浄して、この機能が劣化し
てしまうのを防止するようにした弁装置を提供すること
ができる。As described above, according to the present invention,
Solid matter attached to the valve seat or valve body is blown away with gas and removed from the valve seat surface, and then the valve is closed.Therefore, poor sealing and damage to the valve seat caused by closing the valve with the solid matter sandwiched In addition, by flowing a cleaning liquid from the vicinity of the valve body, the solid matter deposited near the valve body is washed, and the next time the valve device is opened, poor sealing due to the solid matter and damage to the valve seat occur. Is prevented. Accordingly, a valve device is provided that easily and reliably cleans the inside of the on-off valve even if a fluid accompanied by unvaporized substances or reaction products flows, thereby preventing the function from being deteriorated. can do.
【図１】本発明の実施の形態の概略を示す図である。FIG. 1 is a diagram schematically showing an embodiment of the present invention.
【図２】洗浄の一工程を示す要部の拡大断面図である。FIG. 2 is an enlarged sectional view of a main part showing one process of cleaning.
【図３】同じく、洗浄の一工程を示す要部の拡大断面図
である。FIG. 3 is an enlarged cross-sectional view of a main part showing one process of cleaning.
【図４】他の実施の形態の開閉弁を示す要部の拡大断面
図である。FIG. 4 is an enlarged sectional view of a main part showing an on-off valve according to another embodiment.
【図５】従来の開閉弁の断面図である。FIG. 5 is a sectional view of a conventional on-off valve.
２０ 気化器 ２２ 成膜室 ２８ 原料ガス供給流路 ３０ バイパス流路 ３２ａ〜３２ｇ 開閉弁 ３６ａ，３６ｂ トラップ装置 ４２ 洗浄液供給流路 ４６ａ，４６ｂ 分岐流路 ４８ａ，４８ｂ ポート ５０ａ，５０ｂ ガス注入流路 ５８ ポンプ ６０ 洗浄液ベント流路 Reference Signs List 20 vaporizer 22 film forming chamber 28 source gas supply passage 30 bypass passage 32a to 32g opening / closing valve 36a, 36b trap device 42 cleaning liquid supply passage 46a, 46b branch passage 48a, 48b port 50a, 50b gas injection passage 58 Pump 60 Cleaning liquid vent flow path
───────────────────────────────────────────────────── フロントページの続き (72)発明者 柴崎 光直 東京都大田区羽田旭町11番１号 株式会社 荏原製作所内 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Mitsunao Shibasaki 11-1 Haneda Asahimachi, Ota-ku, Tokyo Inside Ebara Corporation
Claims (4)
開閉するための弁装置において、 弁体と弁シートの間の隙間に向けてパージガスを供給す
るパージガス供給ポート、及び／又は、弁体の近傍より
原料ガスの上流側及び下流側の少なくとも一方の流路に
向けて洗浄液を供給する洗浄液供給ポートが設けられて
いることを特徴とする弁装置。1. A valve device for opening and closing a flow path of a raw material gas from which solids are easily deposited, wherein a purge gas supply port for supplying a purge gas toward a gap between a valve body and a valve seat, and / or a valve. A valve device provided with a cleaning liquid supply port for supplying a cleaning liquid from at least one of a flow path on the upstream side and a downstream side of a raw material gas from a vicinity of a body.
開閉するための開閉弁を操作する際に、 前記開閉弁を閉じる直前に弁体と弁シートの間の隙間に
向けてパージガス又は洗浄液を供給する工程を行なうこ
とを特徴とする開閉弁の洗浄方法。2. When operating an on-off valve for opening and closing a flow path of a raw material gas which tends to precipitate solids, immediately before closing the on-off valve, a purge gas or a gas is directed toward a gap between a valve element and a valve seat. A method for cleaning an on-off valve, comprising performing a step of supplying a cleaning liquid.
少なくとも一方の流路に向けて洗浄液あるいはキャリア
ガスを供給する工程を行なうことを特徴とする請求項２
に記載の開閉弁の洗浄方法。3. A step of supplying a cleaning liquid or a carrier gas from at least one of the flow passages in the vicinity of the valve body after closing the on-off valve.
3. The method for cleaning an on-off valve according to 1.
体原料流路から供給された液体原料を気化して原料ガス
流路に送る気化器と、 前記原料ガス流路を開閉する開閉弁と、 弁体の近傍より原料ガス流路の上流側に向けて洗浄液タ
ンクから洗浄液を供給する洗浄液供給ポートと、 前記液体原料流路から分岐して切換可能に設けられて前
記洗浄液タンクに繋がる洗浄液ベント流路とを有するこ
とを特徴とする気化装置。4. A vaporizer for vaporizing a liquid raw material supplied from a liquid raw material flow path at a predetermined vaporization pressure and a predetermined vaporization temperature and sending the liquid raw material to a raw material gas flow path; an on-off valve for opening and closing the raw material gas flow path; A cleaning liquid supply port for supplying a cleaning liquid from a cleaning liquid tank toward the upstream side of the raw material gas flow path from the vicinity of the body; a cleaning liquid vent flow path branched from the liquid raw material flow path and switchably connected to the cleaning liquid tank; And a vaporizer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW87100062 | 1998-01-05 | ||
| TW087100062A TW471031B (en) | 1997-01-08 | 1998-01-05 | Vapor feed supply system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11195649A true JPH11195649A (en) | 1999-07-21 |
| JP3891682B2 JP3891682B2 (en) | 2007-03-14 |
Family
ID=21629293
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09084998A Expired - Fee Related JP3654768B2 (en) | 1998-01-05 | 1998-03-19 | Trap system |
| JP09085098A Expired - Fee Related JP3891682B2 (en) | 1998-01-05 | 1998-03-19 | Valve device and on-off valve cleaning method |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09084998A Expired - Fee Related JP3654768B2 (en) | 1998-01-05 | 1998-03-19 | Trap system |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JP3654768B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6602346B1 (en) * | 2000-08-22 | 2003-08-05 | Novellus Systems, Inc. | Gas-purged vacuum valve |
| WO2005004219A1 (en) * | 2003-07-03 | 2005-01-13 | Tokyo Electron Limited | Pressure reduction process device, pressure reduction process method, and pressure regulation valve |
| JP2006226335A (en) * | 2005-02-15 | 2006-08-31 | Ebara Corp | Method and device for preventing accumulation of deposit on safety valve unit of underground liquid storage facilities |
| WO2009107239A1 (en) * | 2008-02-29 | 2009-09-03 | 株式会社日立国際電気 | Semiconductor producing apparatus and method of pipe purging therefor |
| JP2011080006A (en) * | 2009-10-09 | 2011-04-21 | Nippon Steel Corp | Gas gate valve inside high temperature furnace |
| KR20150076251A (en) * | 2013-01-29 | 2015-07-06 | 엠케이에스 인스트루먼츠, 인코포레이티드 | Fluid control valves |
| JP2015214946A (en) * | 2014-05-13 | 2015-12-03 | ヤンマー株式会社 | Gasification power generating system |
| JP2016159963A (en) * | 2015-03-03 | 2016-09-05 | 富士電機株式会社 | Beverage supply device |
-
1998
- 1998-03-19 JP JP09084998A patent/JP3654768B2/en not_active Expired - Fee Related
- 1998-03-19 JP JP09085098A patent/JP3891682B2/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6602346B1 (en) * | 2000-08-22 | 2003-08-05 | Novellus Systems, Inc. | Gas-purged vacuum valve |
| US7585370B2 (en) | 2000-08-22 | 2009-09-08 | Novellus Systems, Inc. | Gas-purged vacuum valve |
| US7754014B2 (en) | 2000-08-22 | 2010-07-13 | Novellus Systems, Inc. | Gas-purged vacuum valve |
| WO2005004219A1 (en) * | 2003-07-03 | 2005-01-13 | Tokyo Electron Limited | Pressure reduction process device, pressure reduction process method, and pressure regulation valve |
| US8051870B2 (en) | 2003-07-03 | 2011-11-08 | Tokyo Electron Limited | Pressure reduction process device, pressure reduction process method, and pressure regulation valve |
| KR101108379B1 (en) * | 2003-07-03 | 2012-01-30 | 도쿄엘렉트론가부시키가이샤 | Pressure reduction process device, pressure reduction process method, and pressure regulation valve |
| JP2006226335A (en) * | 2005-02-15 | 2006-08-31 | Ebara Corp | Method and device for preventing accumulation of deposit on safety valve unit of underground liquid storage facilities |
| WO2009107239A1 (en) * | 2008-02-29 | 2009-09-03 | 株式会社日立国際電気 | Semiconductor producing apparatus and method of pipe purging therefor |
| JP2011080006A (en) * | 2009-10-09 | 2011-04-21 | Nippon Steel Corp | Gas gate valve inside high temperature furnace |
| KR20150076251A (en) * | 2013-01-29 | 2015-07-06 | 엠케이에스 인스트루먼츠, 인코포레이티드 | Fluid control valves |
| JP2015214946A (en) * | 2014-05-13 | 2015-12-03 | ヤンマー株式会社 | Gasification power generating system |
| JP2016159963A (en) * | 2015-03-03 | 2016-09-05 | 富士電機株式会社 | Beverage supply device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3891682B2 (en) | 2007-03-14 |
| JP3654768B2 (en) | 2005-06-02 |
| JPH11201036A (en) | 1999-07-27 |
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