KR100653828B1 - Trap apparatus - Google Patents

Trap apparatus Download PDF

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KR100653828B1
KR100653828B1 KR1020000009294A KR20000009294A KR100653828B1 KR 100653828 B1 KR100653828 B1 KR 100653828B1 KR 1020000009294 A KR1020000009294 A KR 1020000009294A KR 20000009294 A KR20000009294 A KR 20000009294A KR 100653828 B1 KR100653828 B1 KR 100653828B1
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trap
solvent
gas
vacuum
vapor pressure
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KR1020000009294A
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Korean (ko)
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KR20010006697A (en
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호리에구니아키
아베마사히토
나카다츠토무
아라키유지
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가부시키가이샤 에바라 세이사꾸쇼
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D5/00—Condensation of vapours; Recovering volatile solvents by condensation
    • B01D5/0027—Condensation of vapours; Recovering volatile solvents by condensation by direct contact between vapours or gases and the cooling medium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D8/00—Cold traps; Cold baffles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

Abstract

본 발명의 트랩장치는 바륨/스트론튬 티탄산염과 같은 고유전체(高誘電體)나 강유전체를 증기상의 박막상태로 기판상에 증착하는 증기증착장치로부터 배출된 원료가스를 트랩핑하는데 최적이다. 이 트랩장치는 기판을 처리하는 진공공정챔버의 하류측에 배치되어 진공공정챔버로부터 배출된 가스내에 포함된, 낮은 증기압을 갖는 성분을 트래핑한다. 이 트랩장치는 진공공정챔버로부터 배출된 가스를 도입하는 트랩용기, 및 가스내에 포함되고 쉽게 액화되는 가스성분의 응축온도와 같거나 낮은 온도로 상기 가스를 냉각시키도록 상기 트랩용기내에 마련된 냉각장치를 구비한다. The trap apparatus of the present invention is most suitable for trapping raw material gas discharged from a vapor deposition apparatus in which a high dielectric or ferroelectric such as barium / strontium titanate is deposited on a substrate in a vapor phase thin film state. The trap device traps a low vapor pressure component, which is disposed downstream of the vacuum process chamber processing the substrate and contained in the gas discharged from the vacuum process chamber. The trap device includes a trap container for introducing gas discharged from a vacuum process chamber, and a cooling device provided in the trap container to cool the gas to a temperature equal to or lower than a condensation temperature of a gas component contained in the gas and easily liquefied. Equipped.

Description

트랩장치{TRAP APPARATUS}Trap Apparatus {TRAP APPARATUS}

도 1은 본 발명의 제 1실시예에 따른 트랩장치의 개략도,1 is a schematic diagram of a trap apparatus according to a first embodiment of the present invention;

도 2는 본 발명의 제 2실시예에 따른 트랩장치의 개략도,2 is a schematic diagram of a trap apparatus according to a second embodiment of the present invention;

도 3은 본 발명의 제 3실시예에 따른 트랩장치의 개략도,3 is a schematic diagram of a trap apparatus according to a third embodiment of the present invention;

도 4는 본 발명의 제 4실시예에 따른 트랩장치의 개략도,4 is a schematic diagram of a trap apparatus according to a fourth embodiment of the present invention;

도 5는 본 발명의 제 5실시예에 따른 트랩장치의 개략도,5 is a schematic diagram of a trap apparatus according to a fifth embodiment of the present invention;

도 6은 본 발명이 적용되는 박막 증기 증착장치의 개략도, 및6 is a schematic view of a thin film vapor deposition apparatus to which the present invention is applied, and

도 7은 종래의 트랩장치의 개략도이다.7 is a schematic view of a conventional trap apparatus.

본 발명은 트랩장치에 관한 것으로서, 특히 바륨/스트론튬 티탄산염과 같은 고유전체(高誘電體)나 강유전체를 증기상의 박막상태로 기판상에 증착하는 증기증착장치로부터 배출된 원료가스를 트랩핑하는데 최적인 트랩장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a trap apparatus, and is particularly suitable for trapping raw material gas discharged from a vapor deposition apparatus for depositing a high dielectric constant or ferroelectric such as barium / strontium titanate on a substrate in a vapor phase thin film state. It relates to a phosphorus trap device.

근래에, 반도체 제조업에 있어서, 집적회로의 집적도가 현저하게 향상되었고, 현재의 메가비트급 디램(DRAM)을 대체할 기가비트급 디램을 기대하여 디램의 연구개발활동이 활발히 진행되고 있다. 이러한 디램을 생산하기 위해서, 단위면적당 큰 커패시티를 갖는 커패시터 소자(capacitor element)가 필요하다. 이러한 단위면적당 큰 커패시티를 갖는 요소를 생산하는 유전성 박막재료로서, 10보다 작은 유전상수를 갖는 실리콘산화물이나 실리콘질화물 대신에, 약 20의 유전상수를 갖는 5산화 탄탈륨 펜타옥사이드(Ta2O5)나, 약 300의 유전상수를 갖는 바륨 티타네이트(BaTiO3) 또는 스트론튬 티타네이트(SrTiO3) 또는 바륨스트론튬 티타네이트가 적당한 박막재료로서 고려된다. 또한, 더 높은 유전상수를 갖는 강자성재료도 적당한 박막재료로서 고려된다. In recent years, in the semiconductor manufacturing industry, the degree of integration of integrated circuits has been remarkably improved, and DRAM research and development activities are actively progressing in anticipation of gigabit DRAMs to replace current megabit DRAMs. In order to produce such a DRAM, a capacitor element having a large capacity per unit area is required. A dielectric thin film material that produces an element having a large capacity per unit area, and instead of silicon oxide or silicon nitride having a dielectric constant less than 10, tantalum pentaoxide pentaoxide having a dielectric constant of about 20 (Ta 2 O 5 ) B) Barium titanate (BaTiO 3 ) or strontium titanate (SrTiO 3 ) or barium strontium titanate having a dielectric constant of about 300 is considered as a suitable thin film material. In addition, ferromagnetic materials having higher dielectric constants are also contemplated as suitable thin film materials.

상기한 것에 추가하여, 배선재료로서, 알루미늄보다 낮은 저항력과 전자이동에 대해 우수한 저항력을 갖는 구리가 적당한 재료로서 고려된다. 게이트(gate) 절연필름으로서는, BiVo, Bi4Ti4O12, YMnO3, ZnO, ZnS, 및 CdS가 적당한 재료로 고려된다. 회티탄석(perofskite) 구조를 구비한 전극재료로서, SrRuO3, BaRuO3, IrO, 및 CaRuO3가 적당한 재료로 고려된다. 장벽층(barrier layer) 또는 버퍼층(buffer layer)용 재료로서, MgO, Y2O3, YSZ, 및 TaN이 적당한 재료로 고려된다. 초전도성 물질로서는, La-Ba-Cu-O, La-Sr-Cu-O, Y-Ba-Cu-O, Bi-Sr-Ca-Cu-O, Tl-Ba-Ca-Cu-O, 및 Hg-Ba-Ca-Cu-O가 적당한 재료로 고려된다.In addition to the above, as the wiring material, copper having lower resistivity than aluminum and superior resistivity to electron transfer is considered as a suitable material. As the gate insulating film, BiVo, Bi 4 Ti 4 O 12 , YMnO 3 , ZnO, ZnS, and CdS are considered suitable materials. Perovskite (perofskite) as an electrode material, a structure, SrRuO 3, BaRuO 3, it is contemplated that IrO, and CaRuO 3 with a suitable material. As the material for the barrier layer or the buffer layer, MgO, Y 2 O 3 , YSZ, and TaN are considered suitable materials. As the superconducting material, La-Ba-Cu-O, La-Sr-Cu-O, Y-Ba-Cu-O, Bi-Sr-Ca-Cu-O, Tl-Ba-Ca-Cu-O, and Hg -Ba-Ca-Cu-O is considered a suitable material.

이러한 재료의 박막을 증착하는 공정으로서, 화학 증기증착(CVD)이 유망한 것으로 기대된다. As a process for depositing a thin film of such a material, chemical vapor deposition (CVD) is expected to be promising.

도 6은 바륨/스트론튬 티탄산염과 같은 고유전체나 강유전체의 박막을 증착하는 화학 증기증착장치를 도시한다. 증기증착장치는 액화재료를 기화시키는 기화기(10), 이 기화기(10)의 하류측에 배치되고 원료가스통로(12)를 통해 기화기(10)에 연결된 밀폐 가능한 반응챔버(14), 및 이 반응챔버(14)의 하류측에 배치되고 배기(evacuation)통로(16)내에 제공된 진공펌프(18)를 포함하여 이루어진다. 산소와 같은 산화제 가스를 공급하는 산화제 가스파이프(20)가 반응챔버(14)에 연결된다.FIG. 6 shows a chemical vapor deposition apparatus for depositing a thin film of a high dielectric or ferroelectric such as barium / strontium titanate. The vapor deposition apparatus includes a vaporizer 10 for vaporizing liquefied material, a sealable reaction chamber 14 disposed downstream of the vaporizer 10 and connected to the vaporizer 10 via a source gas passage 12, and the reaction And a vacuum pump 18 disposed downstream of the chamber 14 and provided in the evacuation passage 16. An oxidant gas pipe 20 for supplying an oxidant gas such as oxygen is connected to the reaction chamber 14.

상기한 구조를 갖는 증기증착장치에 있어서, 기판(W)을 고정하고 가열하는 스테이지(22)상에 기판(W)이 위치되고, 기판(W)을 소정의 온도로 유지시키면서 원료가스와 산화제 가스의 혼합물이 가스공급헤드(24)의 노즐(26)로부터 기판(W)상에 분사되어, 기판(W)의 표면상에 박막을 증착한다. 이 경우에 있어서, 반응챔버(14)내의 기판(W)에 원료가스를 안정적으로 공급하는 것이 필요하다. 원료가스는 실온에서 고체인 Ba(DPM)2, Sr(DPM)2등을 액화시키고, 이 액화된 물질을 테트라하이드로푸란(tetrahydrofuran; THF)과 같은 유기용제와 혼합하고, 얻어진 혼합물을 기화기(10)에 의해 기화시킴으로써 생산된다. In the vapor deposition apparatus having the above-described structure, the substrate W is positioned on the stage 22 for fixing and heating the substrate W, and the source gas and the oxidant gas are maintained while maintaining the substrate W at a predetermined temperature. Is injected from the nozzle 26 of the gas supply head 24 onto the substrate W to deposit a thin film on the surface of the substrate W. As shown in FIG. In this case, it is necessary to stably supply the source gas to the substrate W in the reaction chamber 14. The source gas liquefies Ba (DPM) 2 , Sr (DPM) 2, etc., which are solid at room temperature, and the liquefied material is mixed with an organic solvent such as tetrahydrofuran (THF), and the obtained mixture is vaporized (10). Produced by vaporization).

반응챔버(14)로부터 배출된 가스는 높은 승화온도를 갖는 미소비된 원료 및 반응 부산물을 포함하여, 압력상승동안 이 미소비된 원료 및 반응 부산물이 응고되어 진공펌프(18)의 내부상에 증착됨으로써, 결국 진공펌프(18)의 오작동을 일으킨다. 진공펌프의 내부상의 이러한 증착을 방지하기 위하여, 도 6에 도시된 바와 같이, 배출된 가스내에서 높은 승화온도와 낮은 증기압을 갖는 성분을 제거하도록 배기통로(16)내 진공펌프(18)의 상류측에 트랩장치(30)가 제공된다. 원료가스 공급통로(12)와 같은 방식으로 맨틀히터(mantle heater)를 포함하여 이루어지는 온도조절장치(28)가 반응챔버(14)와 이 트랩장치(30)를 상호연결하는 파이프에 마련된다.The gas discharged from the reaction chamber 14 includes micro-raw raw materials and reaction by-products having a high sublimation temperature, so that the micro-raw raw materials and reaction by-products solidify during the pressure rise and are deposited on the inside of the vacuum pump 18. This, in turn, causes malfunction of the vacuum pump 18. To prevent this deposition on the interior of the vacuum pump, as shown in FIG. 6, upstream of the vacuum pump 18 in the exhaust passage 16 to remove components having high sublimation temperature and low vapor pressure in the discharged gas. A trap device 30 is provided on the side. In the same manner as the source gas supply passage 12, a temperature control device 28 including a mantle heater is provided in the pipe connecting the reaction chamber 14 and the trap device 30 to each other.

종래에는, 도 7에 도시된 바와 같이, 트랩장치(30)는 나선형의 유체통로를 형성하는 나선형 배플 플레이트(32)를 구비한 트랩유닛(34), 이 트랩유닛(34)을 수용하는 트랩용기(36), 이 트랩용기(36)의 상단에 연결된 유입파이프(38), 및 트랩용기(36)의 저부에 연결된 유출파이프(40)를 포함하여 이루어진다. 트랩장치(30)는 퀵커플링(42a,42b)에 의해 배기통로(16)에 연결된다. 트랩장치(30)는 그 중심부에, 낮은 증기압을 갖는 트랩될 성분의 응측온도보다 낮은 온도로 냉각된 냉각매개물이 통과하여 흐르는 냉각 매개물 흐름통로(44)를 구비한다. 이렇게 함으로써, 배출된 가스가 배플 플레이트(32)를 따라 흐르는 동안, 유입 파이프(38)를 통해 트랩용기(36)내로 들어온 배출된 가스내에서 낮은 증기압을 갖는 성분이 트랩유닛(34)에 의해서 트랩되고 제거되어, 높은 증기압을 갖는 성분만이 유출파이프(40)와 배기통로(16)를 통해 진공펌프(18)에 이른다(도 6참조). Conventionally, as illustrated in FIG. 7, the trap device 30 includes a trap unit 34 having a spiral baffle plate 32 forming a spiral fluid passageway, and a trap container for receiving the trap unit 34. (36), an inlet pipe (38) connected to the upper end of the trap container (36), and an outlet pipe (40) connected to the bottom of the trap container (36). The trap device 30 is connected to the exhaust passage 16 by quick couplings 42a and 42b. The trap device 30 has a cooling medium flow passage 44 through which the cooling medium cooled at a temperature lower than the condensation temperature of the component to be trapped at the center thereof flows. By doing so, while the discharged gas flows along the baffle plate 32, a component having a low vapor pressure in the discharged gas entering the trap vessel 36 through the inlet pipe 38 is trapped by the trap unit 34. Only the components having a high vapor pressure reach the vacuum pump 18 through the outflow pipe 40 and the exhaust passage 16 (see FIG. 6).

하지만, 이러한 트랩장치에 있어서, 미소비된 원료와 같이 낮은 증기압을 갖는 성분이 트랩용기내에서 응축되어 분말형태의 물질이 되고, 이렇게 생성된 분말형태의 물질이 트랩유닛의 표면상에 점차로 증착된다. 만약 진공시스템내 조건의 변화하에 역류가 발생하거나, 상류측으로부터의 공급량이 급격히 감소하거나, 공급이 끊긴 경우, 이 증착된 고체물질은 반응챔버내를 흘러 기판상에 증착될 미립자를 형성하고, 결국 생산된 막의 질을 악화시키게 된다. However, in such a trap device, a component having a low vapor pressure, such as micro-raw material, is condensed in the trap container to become a powdery substance, and the powdery substance thus produced is gradually deposited on the surface of the trap unit. . If reverse flow occurs under varying conditions in the vacuum system, or the supply from the upstream side is drastically reduced or the supply is interrupted, this deposited solid material flows into the reaction chamber to form particulates to be deposited on the substrate, eventually. The quality of the membrane produced is deteriorated.

따라서, 본 발명의 목적은 화학 증기증착장치와 같은 처리장치로부터 배출된 가스내에서 낮은 증기압을 갖는 성분을 확실하게 트랩할 수 있는 트랩장치를 제공하고, 트랩된 성분이 주위로 비산(scattering)되는 것을 방지하는 것이다. It is therefore an object of the present invention to provide a trapping apparatus capable of reliably trapping a component having a low vapor pressure in a gas discharged from a processing apparatus such as a chemical vapor deposition apparatus, wherein the trapped component is scattered around. To prevent that.

본 발명의 제 1실시형태에 따르면, 진공공정챔버로부터 배출된 가스내에 포함된, 낮은 증기압을 갖는 성분을 트래핑하도록 기판을 처리하는 진공공정챔버의 하류측에 배치된 트랩장치가 마련되고, 이 트랩장치는 진공공정챔버로부터 배출된 가스를 도입하는 트랩용기, 및 가스내에 포함되고 쉽게 액화되는 가스성분의 응축온도와 같거나 낮은 온도로 가스를 냉각하도록 트랩용기내에 마련된 냉각장치를 포함하여 이루어진다. According to a first embodiment of the present invention, there is provided a trap device disposed downstream of a vacuum process chamber for processing a substrate to trap a component having a low vapor pressure contained in a gas discharged from the vacuum process chamber. The apparatus comprises a trap container for introducing gas discharged from the vacuum process chamber, and a cooling device provided in the trap container to cool the gas to a temperature equal to or lower than the condensation temperature of the gas component contained in the gas and easily liquefied.

본 발명에 따라, 트랩용기내로 도입된 배출된 가스가 냉각장치에 의해 냉각되고, 원료가스내에 포함되고 쉽게 액화되는 용제가스(기화에 의해 용제로부터 발생된 가스)와 같은 가스가 트랩용기내에서 응축되어, 트랩용기내의 증착된 물질내에 응축된 물질이 포함된다. 따라서, 트랩용기내의 증착된 물질은 촉촉해져, 증착된 물질과 트랩용기의 내부표면 사이의 점착, 및 증착된 물질의 합착(cohesion)이 강해진다. 이렇게 함으로써, 증착된 물질이 트랩용기등의 내부표면으로부터 제거되는 것이 방지되어, 미립자의 발생을 방지한다. According to the present invention, the discharged gas introduced into the trap container is cooled by a cooling device, and a gas such as a solvent gas (gas generated from the solvent by vaporization) contained in the source gas and easily liquefied is condensed in the trap container. And condensed material in the deposited material in the trap container. Thus, the deposited material in the trap container is moistened, resulting in a strong adhesion between the deposited material and the inner surface of the trap container and the cohesion of the deposited material. By doing so, the deposited material is prevented from being removed from the inner surface of the trap container or the like, thereby preventing the generation of fine particles.

본 발명의 제 2실시형태에 따르면, 진공공정챔버로부터 배출된 가스내에 포함되고 낮은 증기압을 갖는 성분을 트래핑하도록 기판을 처리하는 상기 진공공정챔버의 하류측에 배치된 트랩장치가 마련되고, 이 트랩장치는 진공공정챔버로부터 배출된 가스를 도입하는 트랩용기; 및 휘발되기 어려운 용제를 상기 트랩용기내로 공급하는 용제공급장치를 포함하여 이루어진다. According to a second embodiment of the present invention, there is provided a trap apparatus disposed downstream of the vacuum process chamber for processing a substrate to trap a component contained in the gas discharged from the vacuum process chamber and having a low vapor pressure. The apparatus includes a trap container for introducing a gas discharged from the vacuum process chamber; And a solvent supply device for supplying a solvent which is hard to volatilize into the trap container.

본 발명에 따라, 트랩용기내의 증착된 물질에 용제를 공급함으로써, 트랩용기내의 증착된 물질이 촉촉해져, 증착된 물질과 트랩용기의 내부표면 사이의 점착, 및 증착된 물질의 합착이 강해진다. 이렇게 함으로써, 증착된 물질이 트랩용기등의 내부표면으로부터 이탈되는 것이 방지되어, 미립자의 발생을 방지한다. 휘발되기 어려운 용제로서, 트랩용기내에서 진공하에 액체상태이고, 소망하는 진공정도로 공정챔버내를 유지시키는 원료가 선택된다. 트랩용기내에 용제를 분무하거나 뿌림으로써, 가스와 액체 사이의 흡수반응이 가속화될 것이다. According to the present invention, by supplying a solvent to the deposited material in the trap container, the deposited material in the trap container is moistened, so that adhesion between the deposited material and the inner surface of the trap container and adhesion of the deposited material are strengthened. This prevents the deposited material from escaping from the inner surface of the trap container or the like, and prevents the generation of fine particles. As a solvent which is hard to volatilize, the raw material which is a liquid state under vacuum in a trap container, and maintains in a process chamber to the desired vacuum degree is selected. By spraying or spraying solvent into the trap vessel, the absorption reaction between the gas and the liquid will be accelerated.

본 발명의 제 3실시형태에 따르면, 상기한 제 2실시형태에 따른 트랩장치에 있어서, 휘발되기 어려운 상기 용제는 부틸아세테이트, 테트라하이드로푸란 , 또는 루티딘(lutidine)을 포함하는 원료의 용제로서 사용되는 용제; 테트라글림(tetraglyme), 톨루엔, 또는 테트라엔(tetraene)을 포함하는 원료의 부가물로서 사용되는 용제; 또는 디피발로일메탄(dipivaloylmethane)을 포함하는 원료의 리간드(ligand)로서 사용되는 용제로부터 선택된다. According to a third embodiment of the present invention, in the trap device according to the second embodiment, the solvent which is hard to volatilize is used as a solvent of a raw material containing butyl acetate, tetrahydrofuran, or lutidine. Solvents; Solvents used as adducts of raw materials containing tetraglyme, toluene, or tetraene; Or a solvent used as a ligand of a raw material containing dipivaloylmethane.

본 발명에 따라, 트랩용기내로 도입된 배출된 가스내에서 낮은 증기압을 갖는 성분이 용제저장기내에 저장된 액화용제내에서 트랩되어, 트랩된 물질의 비산이 방지될 수 있다.According to the present invention, a component having a low vapor pressure in the discharged gas introduced into the trap container can be trapped in the liquefied solvent stored in the solvent reservoir, thereby preventing scattering of the trapped material.

이러한 바람직한 실시형태에 있어서, 휘발되기 어려운 상기 용제는 부틸아세테이트, 테트라하이드로푸란, 또는 루티딘을 포함하는 원료의 용제로서 사용되는 용제; 테트라글림, 톨루엔, 또는 테트라엔을 포함하는 원료의 부가물로서 사용되는 용제; 또는 디피발로일메탄을 포함하는 원료의 리간드로서 사용되는 용제로부터 선택된다. 이렇게 함으로써, 용제가 반응챔버로 역류한다 하더라도, 증착된 막의 질에 악영향을 주지 않는다.In this preferred embodiment, the solvent which is hard to volatilize is a solvent used as a solvent of a raw material containing butyl acetate, tetrahydrofuran, or lutidine; Solvents used as adducts of raw materials containing tetraglyme, toluene, or tetraene; Or a solvent used as a ligand of a raw material containing dipyvaloyl methane. By doing so, even if the solvent flows back into the reaction chamber, it does not adversely affect the quality of the deposited film.

본 발명의 제 4실시형태에 따르면, 액화원료를 기화시키는 기화기, 기화기의 하류측에 배치된 반응챔버, 반응챔버의 하류측에 배치된 진공펌프, 반응챔버로부터 진공챔버로 연장되는 배기통로내에 마련된 트랩장치를 포함하여 이루어지는 박막 증기 증착장치가 제공되고, 상기 트랩장치는 진공공정챔버로부터 배출된 가스를 도입하는 트랩용기, 및 가스내에 포함되고 쉽게 액화되는 가스성분의 응축온도와 같거나 낮은 온도로 가스를 냉각하도록 트랩용기내에 마련된 냉각장치를 포함하여 이루어진다. According to the fourth embodiment of the present invention, a vaporizer provided to vaporize a liquefied raw material, a reaction chamber disposed downstream of the vaporizer, a vacuum pump disposed downstream of the reaction chamber, and provided in an exhaust passage extending from the reaction chamber to the vacuum chamber A thin film vapor deposition apparatus comprising a trap apparatus is provided, wherein the trap apparatus is provided at a temperature equal to or lower than a condensation temperature of a trap container for introducing a gas discharged from a vacuum process chamber, and a gas component contained in the gas and easily liquefied. And a cooling device provided in the trap container to cool the gas.

본 발명의 다른 실시형태에 따르면, 액화원료를 기화시키는 기화기, 기화기의 하류측에 배치된 반응챔버, 반응챔버의 하류측에 배치된 진공펌프, 및 상기 반응챔버로부터 상기 진공챔버로 연장되는 배기통로내에 제공된 트랩장치를 포함하여 이루어지는 박막 증기 증착장치가 마련되고, 상기 트랩장치는 진공공정챔버로부터 배출된 가스를 도입하는 트랩용기, 및 휘발되기 어려운 용제를 트랩용기내로 공급하는 용제공급장치를 포함하여 이루어진다. According to another embodiment of the present invention, a vaporizer for vaporizing a liquefied raw material, a reaction chamber disposed downstream of the vaporizer, a vacuum pump disposed downstream of the reaction chamber, and an exhaust passage extending from the reaction chamber to the vacuum chamber A thin film vapor deposition apparatus including a trap device provided therein is provided, the trap device including a trap container for introducing a gas discharged from a vacuum process chamber, and a solvent supply device for supplying a solvent which is hard to be volatilized into the trap container. Is done.

본 발명의 또 다른 실시형태에 따르면, 액화원료를 기화시키는 기화기, 기화기의 하류측에 배치된 반응챔버, 반응챔버의 하류측에 배치된 진공펌프, 및 반응챔버로부터 진공챔버로 연장되는 배기통로내에 제공된 트랩장치를 포함하여 이루어지는 박막 증기 증착장치가 마련되고, 상기 트랩장치는 진공공정챔버로부터 배출된 가스를 도입하는 트랩용기, 및 휘발되기 어려운 용제를 액체상태로 저장하는, 트랩용기내에 제공된 용제저장기를 포함하여 이루어진다. According to yet another embodiment of the present invention, a vaporizer for vaporizing a liquefied raw material, a reaction chamber disposed downstream of the vaporizer, a vacuum pump disposed downstream of the reaction chamber, and an exhaust passage extending from the reaction chamber to the vacuum chamber A thin film vapor deposition apparatus comprising a provided trap apparatus is provided, wherein the trap apparatus includes a trap container for introducing a gas discharged from a vacuum process chamber, and a solvent storage provided in a trap container for storing a solvent that is hard to be volatilized in a liquid state. It includes a group.

본 발명의 상기 및 기타 목적, 특징, 장점은 본 발명의 바람직한 실시형태를 예시하는 첨부된 도면과 함께 다음의 예시적인 설명으로부터 명확해질 것이다. These and other objects, features, and advantages of the present invention will become apparent from the following illustrative description in conjunction with the accompanying drawings which illustrate preferred embodiments of the invention.

도면을 참조하여 본 발명에 따른 트랩장치가 아래에 설명된다. 본 발명에 따른 트랩장치는 도 6에 도시된 박막 증기 증착장치에 적용되며, 도 1 내지 도 3을 참조하여 설명된다. 도 7에 도시된 종래의 장치의 구성요소 또는 부품과 동일하거나 유사한, 도 1 내지 도 3에 도시된 구성요소 또는 부품은 동일한 참조번호로 표시된다. The trap apparatus according to the present invention will be described below with reference to the drawings. The trap apparatus according to the present invention is applied to the thin film vapor deposition apparatus shown in FIG. 6 and will be described with reference to FIGS. 1 to 3. Components or parts shown in FIGS. 1 to 3, which are the same as or similar to those of the conventional apparatus shown in FIG. 7, are designated by the same reference numerals.

도 1은 본 발명의 제 1실시예에 따른 트랩장치를 도시한다. 이 실시예의 트랩장치(30)는 그 안에 트랩챔버를 형성하는 원통형의 컵형상의 몸체를 구비한 트랩용기(36), 이 트랩용기(36)의 측면에 연결된 유입파이프(38), 및 트랩용기(36)의 다른 측면에 연결된 유출파이프(40)를 포함하여 이루어진다. 트랩용기(36)내에 냉각장치(50)가 배치되어 트랩용기(36)의 내부대기를 냉각시키고, 뚜껑(52)에 의해 트랩용기(36) 상부의 개방단이 닫힌다. 냉각장치(50)는 미반응 원료 가스(unreacted material gas)와 같이 낮은 증기압을 갖는 성분을 응고시킬 뿐만 아니라, 비교적 쉽게 액화되는 성분을 일정온도로 냉각시켜 응고되거나 온도가 낮아지게 하는 역할을 한다. 1 shows a trap apparatus according to a first embodiment of the present invention. The trap device 30 of this embodiment includes a trap container 36 having a cylindrical cup-shaped body defining a trap chamber therein, an inlet pipe 38 connected to the side of the trap container 36, and a trap container. And an outlet pipe 40 connected to the other side of the cylinder 36. A cooling device 50 is disposed in the trap container 36 to cool the internal atmosphere of the trap container 36, and the open end of the upper part of the trap container 36 is closed by the lid 52. The cooling device 50 not only solidifies the component having a low vapor pressure, such as unreacted material gas, but also serves to solidify or lower the temperature by cooling the component which is relatively easily liquefied to a certain temperature.

이 실시예에서 냉각장치(50)는 액화질소를 사용하고, 액화질소를 저장하는 용기(54), 이 용기(54)내로 액화질소를 공급하는 액화질소 공급파이프(56), 및 유출파이프(58)을 구비한다. 용기(54)는 그 외부표면상에 복수의 핀(60)을 구비한다. 냉각장치(50)에 있어서, 핀(60)은 액화질소의 끓는점에 대응하는 -176℃ 정도의 온도로 냉각된다. 도 6에 도시된 바와 같이, 반응챔버(14)와 진공펌프(18)를 상호 연결하는 배기통로(16)내에 트랩장치(30)가 제공되고, 반응챔버(14)로부터 배출된 가스는 트랩용기(36)내로 도입된다.In this embodiment, the cooling device 50 uses a liquid nitrogen, a container 54 for storing the liquid nitrogen, a liquid nitrogen supply pipe 56 for supplying the liquid nitrogen into the container 54, and an outflow pipe 58. ). The container 54 has a plurality of pins 60 on its outer surface. In the cooling device 50, the fin 60 is cooled to the temperature of about -176 degreeC corresponding to the boiling point of liquid nitrogen. As shown in FIG. 6, a trap device 30 is provided in the exhaust passage 16 interconnecting the reaction chamber 14 and the vacuum pump 18, and the gas discharged from the reaction chamber 14 is trapped. It is introduced into 36.

다음으로, 상기와 같은 구성의 트랩장치의 작동이 아래에 설명된다. Next, the operation of the trap device having the above configuration is explained below.

실온에서 고체인 Ba(DMP)2, Sr(DMP)2 등을 액화시키고, 기화를 촉진하도록 부가물을 추가하고, 액화된 물질과 유기용제를 혼합하고, 얻어진 혼합물을 기화시킴으로써 증기증착장치에 공급되는 원료가스가 생성된다. 따라서, 반응챔버(14)로부터 배출된 가스는 미소비된 원료나 반응 부산물, 원료가스내에 포함된 용제가스, 원료의 부가물 가스, 및 운반가스와 같은 낮은 증기압을 갖는 성분을 포함한다. 용제로서는 부틸아세테이트, 테트라하이드로푸란, 루티딘등이 사용되고, 부가물로서는 테트라글림, 톨루엔, 테트라엔등이 사용된다. It is supplied to the vapor deposition apparatus by liquefying Ba (DMP) 2 , Sr (DMP) 2, etc., which are solid at room temperature, adding an adduct to promote vaporization, mixing the liquefied material and the organic solvent, and vaporizing the obtained mixture. Raw material gas is generated. Accordingly, the gas discharged from the reaction chamber 14 includes components having low vapor pressure such as micro-raw raw materials or reaction by-products, solvent gases contained in the raw material gases, adduct gases of raw materials, and carrier gases. Butyl acetate, tetrahydrofuran, lutidine, etc. are used as a solvent, and tetraglyme, toluene, tetraene, etc. are used as an addition product.

여러 물질을 포함한 배출된 가스가 트랩용기(36)내로 도입되고, 미소비된 원료나 반응 부산물같은 낮은 증기압을 갖는 성분이 응고되어, 트랩용기(36)의 내부표면과 냉각장치(50)의 핀(60)의 외부표면상에 증착된다. 동시에, 쉽게 액화되는 용제나 부가물같은 가스성분이 응축되어, 가스성분이 또한 증착된 물질내에 포함된다. 이렇게 함으로써, 트랩용기(36)내의 증착된 물질이 축축하게 된다. 따라서, 증착된 물질과 트랩용기의 내부표면 사이의 점착, 및 증착된 물질의 합착이 더 강해져, 증착된 물질이 트랩용기(36)의 내부표면 및 핀(60)의 표면으로부터 제거되는 것이 방지되고, 이로 인해 미립자의 생성이 방지된다.The discharged gas containing various substances is introduced into the trap vessel 36, and the components having low vapor pressure, such as microenriched raw materials or reaction by-products, are solidified, so that the inner surface of the trap vessel 36 and the fins of the cooling device 50 are Deposit on the outer surface of (60). At the same time, gas components, such as solvents or adducts, which are easily liquefied are condensed, so that the gas components are also included in the deposited material. By doing so, the deposited material in the trap vessel 36 is moistened. Thus, the adhesion between the deposited material and the inner surface of the trap container, and the coalescence of the deposited material are stronger, preventing the deposited material from being removed from the inner surface of the trap container 36 and the surface of the fin 60. This prevents the production of fine particles.

도 2는 본 발명의 제 2실시예에 따른 트랩장치를 도시한다. 제 2실시예의 트랩장치는 액화질소를 사용하는 냉각장치(50)가 GM(Gifford-McMahon) 사이클 헬륨 냉장장치(62)로 교체된 점에서 제 1실시예의 트랩장치와 다르다. GM 사이클 헬륨 냉장장치(62)는 압축기(66)로부터 냉장유닛(64)으로 액화헬륨을 제공함으로써 냉장유닛(64)내에 제공된 냉각패널(68)이 냉각되는 구조를 구비한다. 트랩용기(36)의 개방단은 냉장유닛(64)의 플랜지(70)에 의해 닫힌다.2 shows a trap apparatus according to a second embodiment of the present invention. The trap device of the second embodiment differs from the trap device of the first embodiment in that the cooling device 50 using liquefied nitrogen is replaced with a GM (Gifford-McMahon) cycle helium refrigeration device 62. The GM cycle helium refrigerating device 62 has a structure in which the cooling panel 68 provided in the refrigerating unit 64 is cooled by providing liquefied helium from the compressor 66 to the refrigerating unit 64. The open end of the trap container 36 is closed by the flange 70 of the refrigerating unit 64.

GM 사이클 헬륨 냉장장치(62)내에서 냉각패널(68)이 약 -150℃의 온도로 냉각되기 때문에, 트랩용기(36)내의 내부대기는 원료가스나 원료의 부가물 가스내에 포함된 용제가스의 응축온도와 동일하거나 낮은 온도로 냉각될 수 있다. Since the cooling panel 68 is cooled to a temperature of about −150 ° C. in the GM cycle helium refrigerating device 62, the internal atmosphere in the trap container 36 may be changed from the solvent gas contained in the raw material gas or the adduct gas of the raw material. It may be cooled to the same or lower temperature than the condensation temperature.

도 3은 본 발명의 제 3실시예에 따른 트랩장치를 도시한다. 제 3실시예의 트랩장치는 2단계 트랩구조를 구비한다. 이 구조는 원료자체가 낮은 증기압을 갖고 자연 열소산(natural heat dissipation)에 의해 트랩될 수 있는 경우에 적용 가능하다. 이 실시예에 있어서, 트랩장치(30)내의 트랩용기(36)는 휘발되기 어려운 용제(74)를 액화상태로 저장하기 위해 트랩용기(36)의 하부에 배치된 용제 저장기(76)를 구비한다. 냉각매체가 통과하여 흐르는 냉각재킷(72)에 의해 용제 저장기(76)가 감싸진다. 용제 저장기(76)내에는 용제(74)의 액위(liquid level)를 검출하는 액위센서(78), 및 용제(74)의 온도를 검출하는 온도센서(80)가 제공된다. 3 shows a trap apparatus according to a third embodiment of the present invention. The trap apparatus of the third embodiment has a two-stage trap structure. This structure is applicable when the raw material itself has a low vapor pressure and can be trapped by natural heat dissipation. In this embodiment, the trap container 36 in the trap device 30 includes a solvent reservoir 76 disposed below the trap container 36 to store a solvent 74 that is hard to volatilize in a liquefied state. do. The solvent reservoir 76 is wrapped by the cooling jacket 72 flowing through the cooling medium. The solvent reservoir 76 is provided with a liquid level sensor 78 for detecting the liquid level of the solvent 74 and a temperature sensor 80 for detecting the temperature of the solvent 74.

용제(74)로서는 원료의 용제로서 사용되는 부틸아세테이트와 같은 용제, 원료의 부가물로서 사용되는 테트라글림과 같은 용제, 또는 원료의 리간드로서 사용되는 디피발로일메탄을 사용할 것이다. As the solvent 74, a solvent such as butyl acetate used as a solvent of the raw material, a solvent such as tetraglyme used as an adduct of the raw material, or dipivaloylmethane used as a ligand of the raw material will be used.

트랩용기(36)의 내부는 용제(74)의 액위보다 낮은 위치로 연장하는 하부단을 구비한 격벽 플레이트(82)에 의해 제 1챔버(84a) 및 제 2챔버(84b)로 나누어진다. 제 1챔버(84a)의 상부단에 유입파이프(38)가 연결되고, 제 2챔버(84b)의 상부단에는 유출파이프(40)가 연결된다. 유입파이프(38)는 제 1챔버(84a)내에서 하향으로 연장하는 내부 파이프(86)에 연결된 하부단을 구비한다. 격벽 플레이트(82)는 그 상부에 제 2챔버(84b)내에서 하향하여 연장하는 연통파이프(88)가 격벽 플레이트(82)에 연결되는 연통개구(82a)를 구비한다. 이렇게 함으로써, 배출된 가스가 유입파이프(38)와 내부 파이프(86)내에서 하향으로 흐르고, 제 1챔버(84a)내에서 상향으로 흐르며, 연통 파이프(88)내에서 하향으로 흐른 다음, 다시 상향으로 흘러 배출 파이프(40)로부터 배출되는 배출가스통로가 제공된다.The interior of the trap container 36 is divided into a first chamber 84a and a second chamber 84b by a partition plate 82 having a lower end extending to a position lower than the liquid level of the solvent 74. An inlet pipe 38 is connected to the upper end of the first chamber 84a, and an outlet pipe 40 is connected to the upper end of the second chamber 84b. The inlet pipe 38 has a lower end connected to the inner pipe 86 extending downward in the first chamber 84a. The partition plate 82 has a communication opening 82a at the upper portion thereof in which a communication pipe 88 extending downward in the second chamber 84b is connected to the partition plate 82. By doing so, the discharged gas flows downward in the inlet pipe 38 and the inner pipe 86, flows upward in the first chamber 84a, flows downward in the communication pipe 88, and then again upwards. A discharge gas passage is provided which flows into and discharges from the discharge pipe 40.

트랩장치(30)는 정기적으로 또는 불규칙적으로 트랩용기(36)내로 용제(74)를 공급하는 용제공급장치(90)를 포함한다. 용제공급장치(90)는 용제(74)를 저장하는 용제탱크(92), 및 이 용제탱크(92)로부터 연장하고 그 위에 용제공급펌프(94)를 구비한 용제공급라인(96)을 포함하여 이루어진다. 용제공급라인(96)은 제 1챔버(84a)로 연장하는 라인과, 제 2챔버(84b)로 연장하는 라인으로 분기되고, 이들 두 라인은 제 1챔버(84a) 및 제 2챔버(84b)내에 위치된 개별 스프레이(98)에 각각 연결된다. 용제탱크(92)는 그 위에 밸브(100)를 구비한 회수라인(102)을 통해 트랩용기(36)내의 용제저장기(76)에 연결된다. 따라서, 용제공급펌프(94)를 작동시킴으로써, 용제탱크(92)내에 저장된 용제(74)가 스프레이(98)로부터 트랩용기(36)내의 제 1챔버(84a) 및 제 2챔버(84b)내로 공급된다. The trap device 30 includes a solvent supply device 90 that supplies the solvent 74 into the trap container 36 on a regular or irregular basis. The solvent supply device 90 includes a solvent tank 92 for storing the solvent 74 and a solvent supply line 96 extending from the solvent tank 92 and having a solvent supply pump 94 thereon. Is done. The solvent supply line 96 is divided into a line extending to the first chamber 84a and a line extending to the second chamber 84b, and these two lines are divided into a first chamber 84a and a second chamber 84b. Each is connected to a separate spray 98 located within. The solvent tank 92 is connected to the solvent reservoir 76 in the trap vessel 36 through a recovery line 102 having a valve 100 thereon. Thus, by operating the solvent supply pump 94, the solvent 74 stored in the solvent tank 92 is supplied from the spray 98 into the first chamber 84a and the second chamber 84b in the trap container 36. do.

이 실시예의 트랩장치에 있어서, 반응챔버(14)로부터 배출된 가스가 유입파이프(38)를 통해 트랩용기(36)내의 제 1챔버(84a)내로 도입되어, 제 1챔버(84a)내에서 상향으로 흐른다. 이러한 상향흐름동안, 미소비된 연료와 같이 낮은 증기압을 갖는 성분이 자연 열소산에 의해 냉각되고 응축되어, 흐름의 관성에 의해 떨어져, 용제저장기(76)내에 저장된 용제(74)에 의해 트랩된다. 제 1챔버(84a)내에서 상향으로 흐른 가스는 연통파이프(88)내에서 하향으로 흘러, 제 2챔버(84b)내로 도입된다. 제 2챔버(84b)내에서, 상향흐름동안 미소비된 연료와 같이 낮은 증기압을 갖는 성분이 자연 열소산에 의해 냉각되어, 용제저장기(76)내에 저장된 용제(74)에 의해 트랩된다. 용제저장기(76)내의 용제(74)의 온도는 낮은 증기압을 갖는 성분의 기화를 진행시키지 않는 값으로 제어된다. In the trap apparatus of this embodiment, the gas discharged from the reaction chamber 14 is introduced into the first chamber 84a in the trap container 36 through the inlet pipe 38, and upwardly in the first chamber 84a. Flows into. During this upflow, components with low vapor pressure, such as microfueled fuel, are cooled and condensed by natural heat dissipation, and are trapped by the solvent 74 stored in the solvent reservoir 76, falling off by the inertia of the flow. . The gas flowing upward in the first chamber 84a flows downward in the communication pipe 88 and is introduced into the second chamber 84b. In the second chamber 84b, components with low vapor pressure, such as microfueled fuel during upflow, are cooled by natural heat dissipation and trapped by the solvent 74 stored in the solvent reservoir 76. The temperature of the solvent 74 in the solvent reservoir 76 is controlled to a value that does not allow vaporization of the component having a low vapor pressure.

제 1챔버(84a) 및 제 2챔버(84b)내에서 응고된 낮은 증기압을 갖는 성분은 트랩용기(36)의 내부표면과, 격벽플레이트(82), 내부 파이프(86), 및 연통파이프(88)의 표면상에 부분적으로 증착된다. 이렇게 함으로써, 용제공급장치(90)의 용제공급펌프(94)가 주기적으로 또는 불규칙적으로 작동되고, 용제탱크(92)내에 저장된 용제(74)가 스프레이(98)로부터 제 1챔버(84a) 및 제 2챔버(84b)내로 분무된다. 따라서, 낮은 증기압을 갖고 트랩용기(36)의 내부표면상 에 증착된 성분, 격벽 플레이트(82)의 표면등이 용제(74)에 의해 축축해져, 증착된 물질과 용기의 내부표면 사이의 점착, 및 증착된 물질의 합착(cohesion)이 더 강해져, 증착된 물질이 트랩용기(36)의 내부표면과 격벽 플레이트(82)의 표면등으로부터 제거되는 것이 방지된다.The components having low vapor pressure solidified in the first chamber 84a and the second chamber 84b are formed on the inner surface of the trap container 36, the partition plate 82, the inner pipe 86, and the communication pipe 88. Partially deposited on the surface of the substrate. By doing so, the solvent supply pump 94 of the solvent supply device 90 is operated periodically or irregularly, and the solvent 74 stored in the solvent tank 92 is discharged from the spray 98 to the first chamber 84a and the first chamber. Sprayed into two chambers 84b. Thus, the components deposited on the inner surface of the trap vessel 36 with low vapor pressure, the surface of the partition plate 82, and the like are moistened by the solvent 74, so that adhesion between the deposited material and the inner surface of the container, And the cohesion of the deposited material is stronger, thereby preventing the deposited material from being removed from the inner surface of the trap container 36 and the surface of the partition plate 82 and the like.

이때, 스프레이(98)로부터 공급된 용제(74)의 양과, 용제저장기(76)로부터 배출된 용제(74)의 양을 조절함으로써 용제저장기(76)내의 용제(74)의 액위가 조절될 수 있다. 또한, 용제저장기(76)내에 저장된 용제(74)내의 물질의 농도가 높으면, 용제저장기(76)내의 용제(74)는 새로운 용제로 교체되어, 트래핑 동작은 계속될 수 있다.At this time, the liquid level of the solvent 74 in the solvent reservoir 76 may be adjusted by adjusting the amount of the solvent 74 supplied from the spray 98 and the amount of the solvent 74 discharged from the solvent reservoir 76. Can be. In addition, if the concentration of the substance in the solvent 74 stored in the solvent reservoir 76 is high, the solvent 74 in the solvent reservoir 76 is replaced with a new solvent, the trapping operation can continue.

원료의 용제로서 사용되는 부틸아세테이트와 같은 용제, 원료의 리간드로서 사용되는 디피발로일메탄과 같은 용제, 또는 원료의 부가물로서 사용되는 테트라글림과 같은 용제가 용제(74)로서 이용되는 경우에는, 이 용제(74)가 기화되어 반응챔버(14)내로 역류하더라도, 기판상에 증착된 박막내에 용제가 포함되는 것이 방지되어, 막의 질의 저하를 방지한다. When a solvent such as butyl acetate used as the raw material solvent, a solvent such as dipipalloylmethane used as the ligand of the raw material, or a tetraglyme used as an adduct of the raw material is used as the solvent 74, Even if this solvent 74 vaporizes and flows back into the reaction chamber 14, the solvent is prevented from being contained in the thin film deposited on the substrate, thereby preventing the quality of the film from deteriorating.

도 4는 도 3에 도시된 제 3실시예의 변형된 실시형태를 도시한다. 휘발되기 어려운 용제(74)가 스프레이(98)를 통해 흐르지 않고 용제저장기(76)에 직접적으로 공급된다. 이 실시예에 있어서, 용제(74)의 액위가, 내부 파이프(86) 및 연통파이프(88)와 이 액위 사이에 소정의 작은 값을 갖는 간극(δ)을 형성하여 유지되도록 제어기(미도시됨)에 의해 용제공급펌프(94)가 제어된다. 이러한 구조는 배출된 가스가 용제(74)와 충돌하게 하여, 가스내의 낮은 증기압을 갖는 성분이 용제(74)에 의해 직접적으로 트랩된다. 이 실시예의 트랩장치에 따르면, 도 7에 도시된, 배플플레이트(baffle plate; 32)를 포함하는 종래의 트랩장치와 비교하여, 증착된 물질의 비산이 발생하기 어렵다. FIG. 4 shows a modified embodiment of the third embodiment shown in FIG. 3. Solvent 74 which is hard to volatilize is supplied directly to the solvent reservoir 76 without flowing through the spray 98. In this embodiment, the controller (not shown) is such that the liquid level of the solvent 74 is maintained by forming a gap δ having a predetermined small value between the inner pipe 86 and the communication pipe 88 and the liquid level. Is controlled by the solvent supply pump 94. This structure causes the discharged gas to collide with the solvent 74 so that the component with the low vapor pressure in the gas is trapped directly by the solvent 74. According to the trap apparatus of this embodiment, compared to the conventional trap apparatus including the baffle plate 32 shown in FIG. 7, scattering of the deposited material is less likely to occur.

도 5는 본 발명의 또 다른 실시예에 따른 트랩장치를 도시한다. 이 실시예에 있어서, 직경이 아래쪽으로 갈수록 점차 커지는 복수의 트래이(tray; 100a, 100b, 100c, 100d, 100e)가 다단 방식으로 제공된다. 용기(36)의 중심부에서 상향으로 연장하는 공급파이프(104)를 통해 펌프(94)에 의해 저장탱크(92)로부터 최상의 트래이(100a)에 기화되기 어려운 용제(74)가 공급된 다음, 높이순으로 차례로 하부 트래이(100b 내지 100e)로 흘러넘쳐 공급되어, 다단 캐스케이드(cascade)를 구성한다. 배출된 가스는 트랩용기의 중심부 및 상부에 제공된 유입파이프(38)를 통해 용기(36)내로 도입되고, 트랩용기(36)의 외주부 및 용제(74)의 액위 바로위에 위치된 배출개구(106)를 통과하여 흐른 다음, 유출파이프(40)를 통해 트랩용기(36)로부터 배출된다. 기화되기 어려운 용제(74)가 트랩용기(36)의 내부와 외부의 저장탱크(92) 사이에서 순환되고, 필터(108)에 의해 정화되어 재사용된다. 5 shows a trap apparatus according to another embodiment of the present invention. In this embodiment, a plurality of trays 100a, 100b, 100c, 100d, 100e, which gradually increase in diameter downward, are provided in a multistage manner. A solvent 74 which is difficult to vaporize from the storage tank 92 to the best tray 100a is supplied by the pump 94 through the supply pipe 104 extending upwardly in the center of the vessel 36, and then in ascending order. In turn, it is supplied overflowing to the lower tray (100b to 100e), thereby forming a cascade cascade. The discharged gas is introduced into the vessel 36 through the inlet pipe 38 provided at the center and the upper portion of the trap vessel, and the discharge opening 106 located just above the liquid level of the outer periphery of the trap vessel 36 and the solvent 74. After passing through, it is discharged from the trap container 36 through the outflow pipe 40. Solvent 74, which is difficult to vaporize, is circulated between the storage tank 92 inside and outside the trap container 36, and is purified and reused by the filter 108.

이 실시예에 따르면, 액위 및 캐스케이드가 다단 방식으로 제공되어 트랩효율을 향상시키고, 용제(74)를 순환시켜 필터(108)에 의해 트랩된 물질이 제거되어, 시스템의 외부로 배출된다. 필터(108)의 교체시기는 트랩장치(30)내의 용제의 액위의 상승을 검출함으로써 판단되어 필터의 저항력을 측정한다. According to this embodiment, the liquid level and cascade are provided in a multistage manner to improve trap efficiency, circulate the solvent 74 to remove the trapped material by the filter 108 and discharge it out of the system. The replacement timing of the filter 108 is determined by detecting a rise in the liquid level of the solvent in the trap device 30 to measure the resistance of the filter.

비록 이상에서 본 발명의 몇몇 바람직한 실시예가 상세히 도시되고 설명되었지만, 첨부된 청구범위를 벗어나지 않는 범위내에서 여러 변형 및 변경이 있을 수 있다. Although some preferred embodiments of the invention have been shown and described in detail above, there can be many variations and modifications within the scope of the appended claims.

상술한 바와 같이, 본 발명에 따르면, 원료가스내에 포함된 용제가스와 같은 쉽게 액화되는 가스가 트랩용기내에서 응축되거나, 휘발되기 어려운 물질이 트랩용기로 공급되고, 트랩용기내의 증착된 물질은 촉촉해져, 증착된 물질과 트랩용기의 내부표면 사이의 점착, 및 증착된 물질의 합착이 향상된다. 이렇게 함으로써, 증착된 물질이 트랩용기등의 내부표면으로부터 이탈되는 것이 방지되어, 미립자의 발생을 방지한다. 따라서, 배출가스내의 낮은 증기압을 갖는 성분이 확실하게 트랩될 수 있고, 트랩된 물질의 비산이 방지될 수 있다. 결과적으로, 선행 스테이지에 위치된 반응챔버와 같은 공정챔버내에서, 증착과 같은 공정이 원활하고 고품질로 수행될 수 있어, 본 발명은 반도체 제조업에 있어서 유용한 기술을 제공하게 된다.As described above, according to the present invention, a gas that is easily liquefied, such as a solvent gas contained in the source gas, is condensed in the trap container, or a material that is hard to volatilize is supplied to the trap container, and the deposited material in the trap container is moist. This improves adhesion between the deposited material and the inner surface of the trap vessel, and the adhesion of the deposited material. This prevents the deposited material from escaping from the inner surface of the trap container or the like, and prevents the generation of fine particles. Thus, a component having a low vapor pressure in the exhaust gas can be reliably trapped, and scattering of the trapped material can be prevented. As a result, in a process chamber such as a reaction chamber located at a preceding stage, a process such as deposition can be performed smoothly and with high quality, so that the present invention provides a useful technique in the semiconductor manufacturing industry.

Claims (10)

삭제delete 기판을 처리하는 진공공정챔버를 이용하되, 상기 진공공정챔버의 하류 측에 배치되고, 상기 진공공정챔버로부터 배출된 가스 내에 포함된 낮은 증기압을 갖는 성분을 트래핑하도록 동작하는 트랩장치에 있어서, A trap apparatus using a vacuum processing chamber for processing a substrate, the trap apparatus being disposed downstream of the vacuum processing chamber and operable to trap a component having a low vapor pressure contained in the gas discharged from the vacuum processing chamber. 상기 진공공정챔버로부터 배출된 상기 가스를 도입하는 트랩용기; A trap container for introducing the gas discharged from the vacuum process chamber; 용제가 상기 낮은 증기압을 가지는 상기 성분을 액화시키고 트래핑하도록 하기 위해, 상기 트랩장치 내에서 진공 하에 액체 상태로 유지하는 상기 용제를 상기 트랩용기 내로 공급하는 용제공급장치; 및A solvent supply device for supplying the solvent into the trap vessel to maintain the liquid state under vacuum in the trap apparatus so that the solvent liquefies and traps the component having the low vapor pressure; And 상기 낮은 증기압을 가지는 상기 성분을 응축시키기 위해 상기 용제를 냉각하기 위한 용제냉각장치Solvent cooling device for cooling the solvent to condense the component having the low vapor pressure 를 포함하는 것을 특징으로 하는 트랩장치.Trap device comprising a. 삭제delete 제 2항에 있어서,The method of claim 2, 휘발되기 어려운 상기 용제를 액체 상태로 저장하기 위해 상기 트랩용기 내에 마련된 용제저장기를 추가로 포함하는 것을 특징으로 하는 트랩장치.And a solvent reservoir provided in the trap container for storing the solvent, which is difficult to volatilize, in a liquid state. 제 2항에 있어서,The method of claim 2, 휘발되기 어려운 상기 용제는 부틸아세테이트, 테트라하이드로푸란, 또는 루티딘을 포함하는 원료의 용제로서 사용되는 용제; 테트라글림, 톨루엔, 또는 테트라엔을 포함하는 원료의 부가물로서 사용되는 용제; 또는 디피발로일메탄을 포함하는 원료의 리간드로서 사용되는 용제로부터 선택되는 것을 특징으로 하는 트랩장치.The said solvent which is hard to volatilize is a solvent used as a solvent of the raw material containing butyl acetate, tetrahydrofuran, or lutidine; Solvents used as adducts of raw materials containing tetraglyme, toluene, or tetraene; Or a solvent used as a ligand of a raw material containing dipyvaloyl methane. 삭제delete 제 2항, 제 4항 또는 제 5항 중 어느 한 항에 있어서,The method according to any one of claims 2, 4 or 5, 상기 용제냉각장치는 상기 트랩용기 내에 마련되어, 상기 가스 내에 포함되고 쉽게 액화되는 가스 성분의 응축 온도와 같거나 낮은 온도로 상기 가스를 냉각하는 것을 특징으로 하는 트랩장치.And the solvent cooling device is provided in the trap container to cool the gas to a temperature equal to or lower than a condensation temperature of a gas component contained in the gas and easily liquefied. 박막 증기 증착장치에 있어서,In the thin film vapor deposition apparatus, 액화원료를 기화시키는 기화기;A vaporizer for vaporizing liquefied raw materials; 상기 기화기의 하류 측에 배치된 진공반응챔버;A vacuum reaction chamber disposed downstream of the vaporizer; 상기 진공반응챔버의 하류 측에 배치된 진공펌프; 및 A vacuum pump disposed downstream of the vacuum reaction chamber; And 상기 진공반응챔버로부터 상기 진공펌프로 연장되는 배기통로 내에 마련된 트랩장치를 포함하되, It includes a trap device provided in the exhaust passage extending from the vacuum reaction chamber to the vacuum pump, 상기 트랩장치는 제 2항, 제 4항 또는 제 5항 중 어느 한 항에 따른 트랩장치인 것을 특징으로 하는 박막 증기 증착장치.The trap device is a thin film vapor deposition apparatus, characterized in that the trap device according to any one of claims 2, 4 or 5. 제 2항에 있어서,The method of claim 2, 상기 트랩장치는 기판을 처리하는 진공공정챔버와 결합되는 것을 특징으로 하는 트랩장치.The trap device is a trap device, characterized in that coupled to the vacuum processing chamber for processing the substrate. 기판을 처리하기 위해, 진공공정챔버로부터 배출된 가스 내에 포함된 낮은 증기압을 갖는 성분을 트랩장치 내로 트래핑하기 위한 방법에 있어서,A method for trapping a low vapor pressure component contained in a gas discharged from a vacuum process chamber into a trap device for processing a substrate, the method comprising: 용제가 상기 낮은 증기압을 갖는 상기 성분을 액체화하고 트래핑하도록 하기 위해, 상기 트랩장치 내에서 진공 하에 액체 상태로 유지하는 상기 용제를 용제공급장치에 의해 트랩용기 내로 공급하는 단계;Supplying the solvent into the trap container by the solvent supply device to maintain the liquid state under vacuum in the trap device so that the solvent liquefies and traps the component having the low vapor pressure; 상기 낮은 증기압을 가지는 상기 성분을 응축시키기 위해, 냉각 장치에 의해 상기 용제를 냉각하는 단계; 및Cooling the solvent by a cooling device to condense the component having the low vapor pressure; And 상기 가스 내에 포함된 낮은 증기압을 갖는 상기 성분을 상기 용제에 의해 트래핑하는 단계Trapping by the solvent the component having a low vapor pressure contained in the gas 를 포함하는 것을 특징으로 하는 트래핑 방법.Trapping method comprising a.
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US6488774B1 (en) 2002-12-03

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