JPH11191607A - Lead frame for semiconductor - Google Patents
Lead frame for semiconductorInfo
- Publication number
- JPH11191607A JPH11191607A JP9358970A JP35897097A JPH11191607A JP H11191607 A JPH11191607 A JP H11191607A JP 9358970 A JP9358970 A JP 9358970A JP 35897097 A JP35897097 A JP 35897097A JP H11191607 A JPH11191607 A JP H11191607A
- Authority
- JP
- Japan
- Prior art keywords
- tin
- lead
- lead frame
- inner lead
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体用リードフ
レーム、特に下方に銅合金の放熱板を有する半導体用リ
ードフレームにおけるリードフレーム部材と放熱板との
導通化のための接合技術に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a joining technique for conducting between a lead frame member and a heat sink in a semiconductor lead frame, particularly a semiconductor lead frame having a copper alloy heat sink below. .
【０００２】[0002]
【従来の技術】図２は従来の半導体用リードフレーム１
の構成を示す。2. Description of the Related Art FIG.
Is shown.
【０００３】この半導体用リードフレーム１は、半導体
チップ５を搭載するためのチップ搭載部２と、半導体チ
ップ上の電極と接続するためのインナーリード３ａと、
プリント基板等と接続するためのアウターリード（図示
せず）とを有する銅合金からなるリードフレーム部材３
と、前記インナーリード３ａの部分の下方に配置された
銅合金からなる放熱板４とを有する。この放熱板４は、
インナーリード３ａと接合されてチップ搭載部２を構成
する。換言すれば、チップ搭載部としてのアイランドの
ないリードフレーム部材３のインナーリード部に、アイ
ランドとなる放熱板４を接合した構成となる。The semiconductor lead frame 1 has a chip mounting portion 2 for mounting a semiconductor chip 5, an inner lead 3a for connecting to an electrode on the semiconductor chip, and
Lead frame member 3 made of a copper alloy having outer leads (not shown) for connection to a printed circuit board or the like
And a radiator plate 4 made of a copper alloy disposed below the inner lead 3a. This heat sink 4
The chip mounting portion 2 is formed by being joined to the inner lead 3a. In other words, the heat radiating plate 4 serving as an island is joined to the inner lead portion of the lead frame member 3 having no island as a chip mounting portion.
【０００４】一方、放熱板４は上記接合によりインナー
リード３ａと導通される。従って、放熱板４はパッケー
ジの熱抵抗を下げる、すなわち放熱性を向上させるヒー
ト・スプレッダとしての本来の機能だけでなく、ノイズ
の発生を抑制する接地層又は電源層として利用すること
ができる構成となっている。On the other hand, the heat sink 4 is electrically connected to the inner leads 3a by the above-mentioned bonding. Therefore, the heat radiating plate 4 can be used not only as an original function as a heat spreader for lowering the thermal resistance of the package, that is, for improving heat radiation, but also as a ground layer or a power supply layer for suppressing generation of noise. Has become.
【０００５】ところで、上記銅合金からなるリードフレ
ーム部材３のインナーリード３ａと、その下方に設けた
銅合金からなる放熱板４とを接合し、電気的に接続する
導通化方法は、従来、Ｎｄ3+ＹＡＧレーザーを用いた溶
接により行っている。６はその溶接部を示す。ここで、
インナーリード３ａ又は放熱板４には表面処理を施して
おらず、直接銅合金同志を溶接している。A method of connecting the inner lead 3a of the lead frame member 3 made of a copper alloy and the radiator plate 4 made of a copper alloy provided below the inner lead 3a and electrically connecting the inner lead 3a to the lead frame member 3 is conventionally known as Nd. It is performed by welding using a 3+ YAG laser. Numeral 6 indicates the welded portion. here,
No surface treatment is applied to the inner leads 3a or the heat radiating plates 4, and the copper alloys are directly welded.
【０００６】このように構成した半導体用リードフレー
ムとしては、例えば、電源用内部リードが、電源用ヒー
トスプレッダと電気的に接続され、また、電源用内部リ
ードが、接地用ヒートスプレッダと電気的に接続された
形態（実開平６−３１１５７号）がある。また、リード
フレーム部材の吊りリード先端部とアイランドのコーナ
ー部とをＹＡＧレーザーによりスポット溶接を行う形態
や、リードフレーム部材の吊りリード先端部と、電源プ
レーン層及び接地プレーン層のタブとをＹＡＧレーザー
によりスポット溶接を行う形態（特開平７−２８３３５
７号）が知られている。In the semiconductor lead frame thus configured, for example, the power supply internal lead is electrically connected to the power supply heat spreader, and the power supply internal lead is electrically connected to the grounding heat spreader. (Japanese Utility Model Laid-Open No. 6-31157). Further, a form in which the tip of the suspension lead of the lead frame member and the corner of the island are spot-welded by a YAG laser, or the tip of the suspension lead of the lead frame member and the tabs of the power plane layer and the ground plane layer are connected to the YAG laser. To perform spot welding by using a method (Japanese Patent Laid-Open No. 7-28335)
No. 7) is known.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上記Ｙ
ＡＧレーザーによる溶接に際して、従来は、リードフレ
ーム部材又は放熱板には表面処理を施してはおらず、直
接銅合金同志を溶接している。銅合金は反射率が高い物
質であるのでレーザー光を反射してしまい、加工外観の
ばらつきや溶融した銅が他のリードに飛散し接続不良と
なる場合がある。However, the above Y
Conventionally, when performing welding with an AG laser, no surface treatment is applied to the lead frame member or the heat sink, and copper alloys are directly welded together. A copper alloy is a substance having a high reflectivity, and therefore reflects a laser beam, which may cause variations in the processed appearance and molten copper scattered to other leads, resulting in poor connection.
【０００８】そこで、本発明の目的は、上記課題を解決
し、リードフレーム部材と放熱板との導通化方法として
ＹＡＧレーザーで溶接する際、リードフレーム部材及び
又は放熱板に錫又は錫合金を施すことで、接合すべきリ
ードフレーム部材と放熱板部分の接合強度を高めた半導
体用リードフレームを提供することにある。In view of the above, an object of the present invention is to solve the above-mentioned problems and to apply tin or a tin alloy to a lead frame member and / or a heat sink when welding with a YAG laser as a method of conducting the lead frame member and the heat sink. Accordingly, it is an object of the present invention to provide a semiconductor lead frame in which the joining strength between a lead frame member to be joined and a heat sink is increased.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するた
め、本発明は、次のように構成したものである。Means for Solving the Problems In order to achieve the above object, the present invention is configured as follows.
【００１０】（１）請求項１に記載の発明は、インナー
リードとアウターリードを有するリードフレーム部材の
インナーリード部の下方に、銅合金からなる放熱板を設
け、前記インナーリードと該放熱板とを接合して導通さ
せた半導体用リードフレームにおいて、前記接合すべき
インナーリード及び放熱板の両方又は一方の接合部を錫
もしくは錫合金で被覆し、そのインナーリード及び放熱
板の接合すべき部分をＹＡＧレーザーで溶接したもので
ある。(1) According to the first aspect of the present invention, a heat radiating plate made of a copper alloy is provided below an inner lead portion of a lead frame member having an inner lead and an outer lead. In the semiconductor lead frame, the inner lead and the heat radiating plate to be bonded are covered with tin or a tin alloy, and the part of the inner lead and the heat radiating plate to be bonded is bonded. It was welded with a YAG laser.
【００１１】上記のようにリードフレーム部材あるいは
放熱板の両方あるいはどちらか一方に錫及び錫合金を設
けると、レーザー光の照射により最表面の錫が溶解し、
その溶融した錫が下方の錫及び銅に溶け込み溶接され
る。その結果、溶接部が外観上良好となり、接続不良も
殆どなくなる。また、錫及び錫合金は銅に比べてレーザ
ー光の反射率が低いので、ＹＡＧレーザー光の照射時の
熱損失が少なく、溶接性も良い。When tin and a tin alloy are provided on the lead frame member and / or the heat radiating plate as described above, the tin on the outermost surface is dissolved by the irradiation of the laser beam,
The molten tin melts into the lower tin and copper and is welded. As a result, the appearance of the welded portion is good, and connection failure is almost eliminated. Further, since tin and tin alloys have a lower reflectance of laser light than copper, heat loss during irradiation with YAG laser light is small and weldability is good.
【００１２】要するに、本発明によれば、ＹＡＧレーザ
ー光により溶融した錫が下方の錫及び銅に溶け込みやす
くなり、溶接後の外観不良及びリード同志の接続不良が
ほとんど無くなる。In short, according to the present invention, the tin melted by the YAG laser beam easily melts into the lower tin and copper, and almost no poor appearance after welding and poor connection between leads are almost eliminated.
【００１３】本発明は、銅合金からなる放熱板が共通接
地層又は電源層である形態（請求項２）においても適用
することができる。The present invention can also be applied to a mode (claim 2) in which a heat sink made of a copper alloy is a common ground layer or a power supply layer.
【００１４】ここで、接合すべきインナーリード及び放
熱板の両方又は一方の接合部を被覆する錫もしくは錫合
金は、めっき法、溶融法、蒸着法のいずれかで作製され
るのが望ましい（請求項３）。Here, it is desirable that tin or a tin alloy covering both or one of the inner lead and the heat sink to be joined be produced by any one of a plating method, a melting method, and a vapor deposition method. Item 3).
【００１５】（２）請求項４に記載の発明は、インナー
リードとアウターリードを有するリードフレーム部材の
インナーリード部の下方に、銅合金からなる放熱板を設
け、前記インナーリードと該放熱板とを接合して導通さ
せた半導体用リードフレームにおいて、前記インナーリ
ードと放熱板との接合が、インナーリードと放熱板の中
間に、錫もしくは錫合金から成るペースト材、テープ材
又は箔材のいずれかを配置し、そこにＹＡＧレーザー光
を照射した溶接によるものである。(2) According to a fourth aspect of the present invention, a heat radiating plate made of a copper alloy is provided below an inner lead portion of a lead frame member having an inner lead and an outer lead. In the semiconductor lead frame, the inner lead and the heat sink are joined to each other, and a paste material, a tape material, or a foil material made of tin or a tin alloy is provided between the inner lead and the heat sink. And welding by irradiating a YAG laser beam there.
【００１６】この形態においても、上記と同じく、レー
ザー光により溶融した銅が下方の錫に溶け込みやすくな
り、溶接後の外観不良及びリード同志の接続不良がほと
んど無くなるという効果が得られる。Also in this embodiment, similarly to the above, the effect is obtained that copper melted by the laser beam is easily melted into the lower tin, and poor appearance after welding and poor connection between leads are almost eliminated.
【００１７】更にまた、銅合金の上層に施す錫合金は、
錫−ニッケル、錫−鉛、錫−アンチモン、錫−亜鉛、錫
−銀、錫−インジウム又はそれらの合金のうちのいずれ
かが望ましい（請求項５）。Furthermore, the tin alloy applied to the upper layer of the copper alloy is as follows:
It is desirable to use any one of tin-nickel, tin-lead, tin-antimony, tin-zinc, tin-silver, tin-indium or an alloy thereof (claim 5).
【００１８】[0018]
【発明の実施の形態】以下、本発明を図示の実施形態に
基づいて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below based on the illustrated embodiment.
【００１９】図１に本発明の実施形態における半導体用
リードフレーム１の構成を示す。FIG. 1 shows the structure of a semiconductor lead frame 1 according to an embodiment of the present invention.
【００２０】この半導体用リードフレーム１は、従来の
図２の場合と同じく、半導体チップ５を搭載するための
チップ搭載部２と、半導体チップ上の電極と接続するた
めのインナーリード３ａと、プリント基板等と接続する
ためのアウターリード（図示せず）とを有する銅合金か
らなるリードフレーム部材３と、インナーリード３ａの
部分の下方に配置された銅合金からなる放熱板４とを有
する。この放熱板４は、リードフレーム部材３側に向か
って張り出した延在部４ａを有し、その端部に接合部４
ｂを有する。As shown in FIG. 2, the semiconductor lead frame 1 includes a chip mounting portion 2 for mounting a semiconductor chip 5, an inner lead 3a for connecting to an electrode on the semiconductor chip, and a printed circuit board. A lead frame member 3 made of a copper alloy having outer leads (not shown) for connecting to a substrate or the like, and a heat radiating plate 4 made of a copper alloy disposed below the inner leads 3a. The heat radiating plate 4 has an extending portion 4a projecting toward the lead frame member 3, and a joining portion 4
b.
【００２１】上記の放熱板４は、Ｎｄ3+ＹＡＧレーザー
を用いた溶接により、インナーリード３ａと接合部４ｂ
にて接合され且つ導通化されており、放熱板４によりチ
ップ搭載部２が構成されると共に、この放熱板４がパッ
ケージを低熱抵抗化させるヒート・スプレッダとして機
能し、更にはノイズの発生を抑制する接地層又は電源層
としても機能できる構成となっている。The radiator plate 4 is connected to the inner lead 3a and the joint 4b by welding using a Nd 3+ YAG laser.
The chip mounting portion 2 is constituted by the heat radiating plate 4 and the heat radiating plate 4 functions as a heat spreader for lowering the thermal resistance of the package, and further suppresses the generation of noise. It can function also as a ground layer or a power supply layer.
【００２２】しかし、従来と異なり、接合すべきインナ
ーリード３ａ及び放熱板４の両方又は一方には、予め錫
もしくは錫合金めっきが施され、錫もしくは錫合金のめ
っき層７で被覆され、そのインナーリード３ａ及び放熱
板４の接合すべき部分が、Ｎｄ3+ＹＡＧレーザー光で溶
接されている。この溶接部を図中に符号６で示す。However, unlike the prior art, both or one of the inner lead 3a and the heat radiating plate 4 to be joined are preliminarily plated with tin or a tin alloy, covered with a tin or tin alloy plating layer 7, and the inner The part to be joined between the lead 3a and the heat radiating plate 4 is welded by Nd 3+ YAG laser light. This weld is indicated by reference numeral 6 in the figure.
【００２３】このようにリードフレーム部材あるいは放
熱板の両方あるいはどちらか一方に錫めっき又は錫合金
メッキを施しておくと、レーザー光の照射により最表面
の錫が溶解し、その溶融した錫が下方の錫及び銅へ溶け
込み溶接される。その結果、接合部の外観が良好とな
り、接続不良も殆どなくなる。また錫及び錫合金は銅に
比べレーザー光の反射率が低いので、レーザー光を照射
した時の熱損失が少なく、溶接性も良好となる。If tin plating or tin alloy plating is applied to the lead frame member and / or the heat radiating plate as described above, the tin on the outermost surface is melted by the irradiation of the laser beam, and the melted tin is moved downward. To tin and copper. As a result, the appearance of the joint is improved and the connection failure is almost eliminated. Further, since tin and tin alloys have a lower reflectance of laser light than copper, heat loss upon irradiation with laser light is small, and weldability is also improved.
【００２４】上記めっきを用いたインナーリード３ａと
放熱板４との接合の代わりに、インナーリード３ａと放
熱板４との中間に、錫もしくは錫合金から成るペースト
材、テープ材又は箔材のいずれかを配置し、そこにＹＡ
Ｇレーザー光を照射して溶接することもでき、これによ
っても上記と同じ理由によって、溶接不良をなくし、接
合部の外観を良好する効果を得ることができる。Instead of joining the inner lead 3a and the heat radiating plate 4 using the above plating, any one of a paste material, a tape material, and a foil material made of tin or a tin alloy is provided between the inner lead 3a and the heat radiating plate 4. And place YA there
It is also possible to perform welding by irradiating a G laser beam, and for this reason, for the same reason as described above, it is possible to eliminate welding defects and obtain an effect of improving the appearance of the joint.
【００２５】なお、錫合金としては、錫−ニッケル、錫
−鉛、錫−アンチモン、錫−亜鉛、錫−銀、錫−インジ
ウム又はそれらの合金が使用できる。As the tin alloy, tin-nickel, tin-lead, tin-antimony, tin-zinc, tin-silver, tin-indium or alloys thereof can be used.
【００２６】上記はインナーリード３ａとアウターリー
ドが一体化された単一体から成る場合を想定している
が、エッチング加工により形成されたインナー側リード
と、プレス加工により形成されたアウター側リードとを
接続して複合リードフレームを構成する場合、そのイン
ナー側リードとアウター側リードとの接合にも、本発明
を適用することができる。即ち、別々に形成されたイン
ナー側リードとアウター側リードの両方又は一方の接合
部を、錫もしくは錫合金で被覆し、そのインナーリード
及び放熱板の接合すべき部分をＹＡＧレーザーで溶接す
ることで、溶接後の外観不良及びリード同志の接続不良
がほとんど無いリードを持った所望の複合リードフレー
ムを得ることができる。Although the above description assumes that the inner lead 3a and the outer lead are formed as a single unit, the inner lead formed by etching and the outer lead formed by pressing are separated. In the case where the composite lead frame is formed by connection, the present invention can be applied to the joining between the inner lead and the outer lead. That is, both or one of the joints of the inner side lead and the outer side lead formed separately is coated with tin or a tin alloy, and the part to be joined between the inner lead and the heat sink is welded with a YAG laser. Thus, it is possible to obtain a desired composite lead frame having leads having almost no defective appearance after welding and poor connection between leads.
【００２７】[0027]
【実施例】（実施例１〜３）本発明の実施例１として、
リードフレーム部材３側、正確にはインナーリード３ａ
の溶接部６に脱脂、酸洗の前処理を施した後に、電気め
っき法により、所定の錫めっきを、めっき層７として
０．５μｍ施したリードフレーム部材３と、銅合金から
なる放熱板４とを重ね合わせ、所定の位置にＮｄ3+ＹＡ
Ｇレーザーのレーザ光を照射し、溶接を行った。Examples (Examples 1 to 3) As Example 1 of the present invention,
Lead frame member 3 side, more precisely inner lead 3a
After a pretreatment of degreasing and pickling is performed on the welded portion 6 of the lead frame member 3, a predetermined tin plating is applied as a plating layer 7 by 0.5 μm as a plating layer 7 by an electroplating method, and a heat dissipation plate 4 made of a copper alloy And Nd 3+ YA in place
The laser beam of G laser was irradiated and welding was performed.
【００２８】次に本発明の実施例２として、銅合金から
なるリードフレーム部材３と放熱板４側の溶接部６に脱
脂、酸洗の前処理を施した後に、電気めっき法により錫
めっきを、めっき層７として０．５μｍ施した放熱板４
を重ね合わせ、所定の位置にＮｄ3+ＹＡＧレーザーのレ
ーザ光を照射し溶接を行った。Next, as Embodiment 2 of the present invention, the lead frame member 3 made of a copper alloy and the welded portion 6 on the side of the radiator plate 4 are subjected to a pretreatment of degreasing and pickling, and then tinned by an electroplating method. Radiator plate 4 having a thickness of 0.5 μm as plating layer 7
Were superposed, and a predetermined position was irradiated with a laser beam of an Nd 3+ YAG laser to perform welding.
【００２９】また、本発明の実施例３として、上記のよ
うに錫めっきを施したリードフレーム部材３と放熱板４
とを重ね合わせ、所定の位置にＮｄ3+ＹＡＧレーザーの
レーザー光を照射し溶接を行った。As a third embodiment of the present invention, the lead frame member 3 and the heat sink 4
Were superposed, and a predetermined position was irradiated with a laser beam of an Nd 3+ YAG laser to perform welding.
【００３０】このようにして作製したリードフレーム部
材の溶接部の外観を評価した。外観評価は良：○、やや
良：△、不良：×とした。Ｎｄ3+ＹＡＧレーザーの溶接
条件は、電圧：３７０Ｖ、周波数：３０Ｈｚ、パルス
幅：０．３６ms、１パルスあたりのエネルギー：０．３
３Ｊ、焦点距離：１００mm、エンドミラー位置：３８０
mm、照射回数：１回とした。溶接回数は各フレーム１０
０回行い、その時の不接合率を評価した。The appearance of the welded part of the lead frame member thus manufactured was evaluated. The appearance was evaluated as good: 、, slightly good: Δ, and poor: ×. The welding conditions of the Nd 3+ YAG laser were as follows: voltage: 370 V, frequency: 30 Hz, pulse width: 0.36 ms, energy per pulse: 0.3
3J, focal length: 100mm, end mirror position: 380
mm, irradiation frequency: once. The number of welding times is 10 for each frame.
The test was performed 0 times, and the non-bonding rate at that time was evaluated.
【００３１】これら実施例１〜３における溶接性の評価
結果を表１に示す。Table 1 shows the evaluation results of the weldability in Examples 1 to 3.
【００３２】なお、表１中には、比較例として、銅合金
からなるリードフレーム部材３ａと銅合金からなる放熱
板４とを重ね合わせ、所定の位置にＮｄ3+ＹＡＧレーザ
ーの光を照射し溶接を行ったものを掲げた。In Table 1, as a comparative example, a lead frame member 3a made of a copper alloy and a heat radiating plate 4 made of a copper alloy are superimposed, and a predetermined position is irradiated with Nd 3+ YAG laser light. The ones that have been welded are listed.
【００３３】表１から明らかなように、これらの実施例
１〜３のすべての溶接において、不接合のものは皆無で
あり、比較例と比べ不接合率が改善され、また良好な溶
接外観を得ることができた。As is clear from Table 1, none of the welds of Examples 1 to 3 had any non-bonded parts, and the non-bonded rate was improved as compared with the comparative example, and a good weld appearance was obtained. I got it.
【００３４】[0034]
【表１】 [Table 1]
【００３５】（実施例４〜９）本発明の実施例４、５と
して、上述の実施例１、３の錫めっきの代わりに、錫−
ニッケル（Ｓｎ：Ｎｉ＝７０wt％：３０wt％）めっきを
施し、実施例１と同様に評価を行った。その溶接性の評
価結果を表２に示す。(Examples 4 to 9) As Examples 4 and 5 of the present invention, instead of the tin plating of Examples 1 and 3 described above, tin-
Nickel (Sn: Ni = 70 wt%: 30 wt%) plating was performed, and evaluation was performed in the same manner as in Example 1. Table 2 shows the evaluation results of the weldability.
【００３６】また、本発明の実施例６、７として、上述
の実施例１、３の錫めっきの代わりに、錫−鉛（Ｓｎ：
Ｐｂ＝６３wt％：３７wt％）めっきを施し、実施例１と
同様に評価を行った。その溶接性の評価結果を表２に示
す。Further, as Embodiments 6 and 7 of the present invention, instead of the tin plating of Embodiments 1 and 3, tin-lead (Sn:
(Pb = 63 wt%: 37 wt%) Plating was performed, and evaluation was performed in the same manner as in Example 1. Table 2 shows the evaluation results of the weldability.
【００３７】さらに、本発明の実施例８、９として、上
述の実施例１、３の錫めっきの代わりに、錫−アンチモ
ン（Ｓｎ：Ｓｂ＝７０wt％：３０wt％）めっきを施し、
実施例１と同様に評価を行った。その溶接性の評価結果
を表２に示す。Further, as Embodiments 8 and 9 of the present invention, tin-antimony (Sn: Sb = 70 wt%: 30 wt%) plating was performed instead of the tin plating of the above-described Embodiments 1 and 3.
Evaluation was performed in the same manner as in Example 1. Table 2 shows the evaluation results of the weldability.
【００３８】表２から明らかなように、これらの実施例
４〜９のすべての溶接において、不接合のものは皆無で
あり、不接合率が改善され、良好な溶接外観を得ること
ができた。As is apparent from Table 2, in all of the weldings of Examples 4 to 9, there was no unbonded one, the unbonded rate was improved, and a good welded appearance was obtained. .
【００３９】[0039]
【表２】 [Table 2]
【００４０】（実施例１０〜１２）本発明の実施例１０
として、リードフレーム部材３と放熱板４の中間に、厚
さ１００μｍのはんだ箔（Ｓｎ；Ｐｂ＝６：４）を配置
し、実施例１と同様に溶接部にＮｄ3+ＹＡＧレーザーの
レーザー光を照射し、溶接を行った。(Embodiments 10 to 12) Embodiment 10 of the present invention
A 100 μm-thick solder foil (Sn; Pb = 6: 4) is arranged between the lead frame member 3 and the heat radiating plate 4, and the laser beam of the Nd 3+ YAG laser is applied to the welded portion as in the first embodiment. And welded.
【００４１】同様に、実施例１１として、リードフレー
ム部材３と放熱板４の中間に、１mmのテープ（Ｓｎ；Ｐ
ｂ＝６：４）を配置し、実施例１と同様に溶接部にＮｄ
3+ＹＡＧレーザーのレーザー光を照射し、溶接を行っ
た。Similarly, as an eleventh embodiment, a 1 mm tape (Sn; P) is provided between the lead frame member 3 and the heat sink 4.
b = 6: 4), and Nd was added to the welded portion in the same manner as in Example 1.
A laser beam of a 3+ YAG laser was applied to perform welding.
【００４２】また、同様に、実施例１２として、リード
フレーム部材３と放熱板４の中間に、はんだペースト
（Ｓｎ；Ｐｂ＝６：４）を塗布して配置し、実施例１と
同様に溶接部にＮｄ3+ＹＡＧレーザーのレーザー光を照
射し、溶接を行った。Similarly, in a twelfth embodiment, a solder paste (Sn; Pb = 6: 4) is applied and disposed between the lead frame member 3 and the heat sink 4, and welding is performed in the same manner as in the first embodiment. The portion was irradiated with a laser beam of an Nd 3+ YAG laser to perform welding.
【００４３】これらの溶接性の評価結果を表３に示す。
表３から明らかなように、これらの実施例１０〜１２の
すべての溶接において、不接合のものは皆無であり、不
接合率が改善され、良好な溶接外観を得ることができ
た。Table 3 shows the evaluation results of the weldability.
As is clear from Table 3, in all of the weldings of Examples 10 to 12, there was no non-bonding, the non-bonding rate was improved, and a good weld appearance could be obtained.
【００４４】[0044]
【表３】 [Table 3]
【００４５】[0045]
【発明の効果】以上説明したように本発明によれば、次
のような優れた効果が得られる。As described above, according to the present invention, the following excellent effects can be obtained.
【００４６】（１）請求項１〜５に記載の発明によれ
ば、溶接部のリードフレーム部材及び放熱板の両方ある
いはいずれか一方に錫及び錫合金が施され、所定の位置
にＹＡＧレーザー光による溶接が行われるので、レーザ
ー光により溶融した錫が下方の錫及び銅に溶け込みやす
くなり、不接続率が改善され、良好な溶接外観を得るこ
とが可能である。(1) According to the first to fifth aspects of the present invention, tin or a tin alloy is applied to both or one of the lead frame member and the heat sink of the welded portion, and the YAG laser light is applied to a predetermined position. Is performed, the tin melted by the laser beam easily dissolves in the lower tin and copper, the disconnection rate is improved, and a good weld appearance can be obtained.
【００４７】（２）また、請求項４に記載の発明によれ
ば、リードフレーム部材と放熱板の中間に錫及び錫合金
からなる箔材、テープ材及びペースト材のいずれかが配
置され、所定の位置にＹＡＧレーザーによる溶接が行わ
れるので、同様にレーザー光により溶融した錫が下方の
錫及び銅に溶け込みやすくなり、不接合率が改善され、
良好な溶接外観を得ることが可能である。(2) According to the present invention, any one of a foil material, a tape material and a paste material made of tin and a tin alloy is arranged between the lead frame member and the heat sink. Is welded by the YAG laser at the position, so that the tin melted by the laser light also easily melts into the lower tin and copper, and the non-bonding rate is improved.
Good weld appearance can be obtained.
【図１】本発明による半導体リードフレームの構成を示
す断面図である。FIG. 1 is a sectional view showing a configuration of a semiconductor lead frame according to the present invention.
【図２】従来例による半導体リードフレームの構成を示
す断面図である。FIG. 2 is a cross-sectional view showing a configuration of a conventional semiconductor lead frame.
１ 半導体用リードフレーム ２ チップ搭載部 ３ リードフレーム部材 ３ａ インナーリード ４ 放熱板 ４ａ 延在部 ４ｂ 接合部 ５ 半導体チップ ６ 溶接部 ７ 錫もしくは錫合金のめっき層 DESCRIPTION OF SYMBOLS 1 Lead frame for semiconductors 2 Chip mounting part 3 Lead frame member 3a Inner lead 4 Heat sink 4a Extension part 4b Joining part 5 Semiconductor chip 6 Welding part 7 Tin or tin alloy plating layer
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｃ２２Ｃ 13/02 Ｃ２２Ｃ 13/02 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification code FI C22C 13/02 C22C 13/02
Claims (5)
リードフレーム部材のインナーリード部の下方に、銅合
金からなる放熱板を設け、前記インナーリードと該放熱
板とを接合して導通させた半導体用リードフレームにお
いて、前記接合すべきインナーリード及び放熱板の両方
又は一方の接合部を錫もしくは錫合金で被覆し、そのイ
ンナーリード及び放熱板の接合すべき部分をＹＡＧレー
ザーで溶接したことを特徴とする半導体用リードフレー
ム。1. A semiconductor lead in which a heat radiating plate made of a copper alloy is provided below an inner lead portion of a lead frame member having an inner lead and an outer lead, and the inner lead and the heat radiating plate are joined to conduct. In the frame, both or one of the joints of the inner lead and the radiator plate to be joined is covered with tin or a tin alloy, and the part to be joined of the inner lead and the radiator plate is welded with a YAG laser. Lead frame for semiconductor.
は電源層であることを特徴とする請求項１記載の半導体
用リードフレーム。2. The semiconductor lead frame according to claim 1, wherein the heat sink made of the copper alloy is a common ground layer or a power supply layer.
の両方又は一方の接合部を被覆する錫もしくは錫合金
が、めっき法、溶融法、蒸着法のいずれかにより付与さ
れたものであることを特徴とする請求項１又は２記載の
半導体用リードフレーム。3. The method according to claim 1, wherein the tin or tin alloy covering both or one of the inner lead and the heat radiating plate to be bonded is provided by any one of a plating method, a melting method, and a vapor deposition method. The lead frame for a semiconductor according to claim 1 or 2, wherein:
リードフレーム部材のインナーリード部の下方に、銅合
金からなる放熱板を設け、前記インナーリードと該放熱
板とを接合して導通させた半導体用リードフレームにお
いて、前記インナーリードと放熱板との接合が、インナ
ーリードと放熱板の中間に、錫もしくは錫合金から成る
ペースト材、テープ材又は箔材のいずれかを配置し、そ
こにＹＡＧレーザー光を照射して溶接されたものである
ことを特徴とする半導体用リードフレーム。4. A semiconductor lead in which a heat sink made of a copper alloy is provided below an inner lead portion of a lead frame member having an inner lead and an outer lead, and the inner lead and the heat sink are connected to conduct. In the frame, the bonding between the inner lead and the heat sink is performed by disposing a paste material, a tape material or a foil material made of tin or a tin alloy between the inner lead and the heat sink, and applying a YAG laser beam thereto. A semiconductor lead frame, which is irradiated and welded.
−アンチモン、錫−亜鉛、錫−銀、錫−インジウム又は
それらの合金のうちのいずれかであることを特徴とする
請求項１、２、３又は４記載の半導体用リードフレー
ム。5. The method according to claim 1, wherein the tin alloy is any one of tin-nickel, tin-lead, tin-antimony, tin-zinc, tin-silver, tin-indium, and alloys thereof. Item 5. A semiconductor lead frame according to item 1, 2, 3, or 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9358970A JPH11191607A (en) | 1997-12-26 | 1997-12-26 | Lead frame for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9358970A JPH11191607A (en) | 1997-12-26 | 1997-12-26 | Lead frame for semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11191607A true JPH11191607A (en) | 1999-07-13 |
Family
ID=18462063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9358970A Pending JPH11191607A (en) | 1997-12-26 | 1997-12-26 | Lead frame for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11191607A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005349477A (en) * | 2004-06-08 | 2005-12-22 | Patent Treuhand Ges Elektr Gluehlamp Mbh | Method for welding metal foil to metal pin and lamp having current lead through piercing sealed lamp vessel |
| JP2006116570A (en) * | 2004-10-22 | 2006-05-11 | Miyachi Technos Corp | Laser beam condensing unit and laser beam machine |
| JP2008212977A (en) * | 2007-03-05 | 2008-09-18 | Fuji Electric Device Technology Co Ltd | Laser welding member and semiconductor device using the same |
| JP2008238182A (en) * | 2007-03-26 | 2008-10-09 | Fuji Electric Device Technology Co Ltd | Laser welding member and laser welding method |
| JP2012071356A (en) * | 2012-01-17 | 2012-04-12 | Fuji Electric Co Ltd | Laser welding member and laser welding method |
| US8415027B2 (en) | 2008-03-20 | 2013-04-09 | Denso Corporation | Laser welding structure |
-
1997
- 1997-12-26 JP JP9358970A patent/JPH11191607A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005349477A (en) * | 2004-06-08 | 2005-12-22 | Patent Treuhand Ges Elektr Gluehlamp Mbh | Method for welding metal foil to metal pin and lamp having current lead through piercing sealed lamp vessel |
| JP2006116570A (en) * | 2004-10-22 | 2006-05-11 | Miyachi Technos Corp | Laser beam condensing unit and laser beam machine |
| JP2008212977A (en) * | 2007-03-05 | 2008-09-18 | Fuji Electric Device Technology Co Ltd | Laser welding member and semiconductor device using the same |
| JP2008238182A (en) * | 2007-03-26 | 2008-10-09 | Fuji Electric Device Technology Co Ltd | Laser welding member and laser welding method |
| US8415027B2 (en) | 2008-03-20 | 2013-04-09 | Denso Corporation | Laser welding structure |
| JP2012071356A (en) * | 2012-01-17 | 2012-04-12 | Fuji Electric Co Ltd | Laser welding member and laser welding method |
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