JPH11189863A - Production of thin coating and device therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a producing method for uniformly forming coating with high precision even onto a large-sized substrate and to provide a device therefor. SOLUTION: As the producing method, in a state in which the surface of a substrate is confronted with the sputtering face of this target 3, while an inert gas is introduced into a vacuum chamber 1 via the hollow part of a shield body 2 in attachably and detachably engaged in a through hole piercing almost the center part of the target, the sputtering of the target and the heating of an evaporating source 5 are executed simultaneously or with different timing, and while an inert gas is introduced therein, the generated sputtering particles and evaporating particles are allowed to reach the surface of the substrate in jetted states. Moreover, the producing device is provided with a substrate holding part on a rotary table, a target set along the side face of the chamber in a state in which the sputtering face is faced toward the inner direction of the chamber, a shield body piercing almost the center of this target, a gas introducing tube 4 introduced into the hollow part of this shield body and an evaporating source in the vicinity of the outlet of the gas.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film manufacturing apparatus provided with a sputtering target and an evaporation source, and a method for manufacturing a thin film using the apparatus.

[0002]

2. Description of the Related Art When a multi-component thin film having a relatively thick film thickness of about 1 μm is uniformly formed on a substrate, it is necessary to increase the speed of film formation due to factors such as film accuracy. As an apparatus for that purpose, Japanese Patent Application Laid-Open No. 55-94473 discloses an ion plating apparatus provided with a sputtering target and an evaporation source to form a multi-component film.

[0003] As shown in FIG.
A substrate 46 provided in a state fixed inside the vacuum chamber 4
1, an evaporation source 45 provided below, a target 42 and a sputter electrode 43 provided between the substrate 46 and the evaporation source 45, and an evaporation source 45 provided for generating gas discharge plasma. And a hot cathode 47 provided on the substrate 46 side. In the apparatus having this configuration, the evaporation source 45 is heated in the vacuum chamber 41 into which gas is introduced from the gas supply source 48 to evaporate at a constant speed, and the evaporated evaporation component particles are ionized in the gas discharge plasma, By applying a high-frequency electric field to the sputter electrode 43 to sputter the target 42,
A film of the evaporation component and the sputtering component is formed thereon.

[0004]

In the above-described configuration of the ion plating apparatus, the evaporation source 45 provided in the vacuum chamber 41 is provided at a position facing the substrate 46, but the target 42 is provided at the substrate 46. , The sputtered particles generated from the target 42 cannot reach a large substrate, which is in high demand in recent years, and a uniform film cannot be formed. was there.

Further, the distance between the substrate 46 and the evaporation source 45 is a distance at which the ionized evaporation component cannot reach the substrate in a short time, and there is a problem that the accuracy of the film is poor.

SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and it is an object of the present invention to provide a film forming method and a device for forming a film uniformly and accurately on a large substrate. With the goal.

[0007]

In order to achieve the above-mentioned object, a method of manufacturing a thin film according to the present invention comprises introducing an inert gas into a vacuum chamber, and sputtering a target by ion energy of plasma generated near the target. Sputtered particles generated by the evaporation, and evaporated particles obtained by ionizing the evaporation component obtained by heating the evaporation source by the plasma,
In the method of forming a thin film by adhering to a substrate surface, the target is placed along the side of the vacuum chamber with the sputtering surface facing the inside of the vacuum chamber, and the substrate surface is opposed to the sputtering surface of the target. In this state, while introducing the inert gas into the vacuum chamber through the hollow portion of the shield body removably fitted into a through hole penetrating the substantially central portion of the target, sputtering of the target and By heating the evaporation source at the same time or at different timings, introducing the inert gas at the same time or at different timings to the generated sputtered particles and the evaporated particles to reach the substrate surface in a spray state, thereby forming a thin film. It has been characterized.

It is preferable that the target and the evaporation source are made of different materials. Further, while providing a plurality of the target and the evaporation source, the shield body is removably fitted to each target,
The above-mentioned inert gas may be introduced into the hollow portion of the shield body.

The apparatus of the present invention for applying the above-described method for producing a thin film includes a gas introducing pipe for introducing an inert gas into a vacuum chamber, an evaporation source and a target, and is provided near the target. To form a thin film by adhering sputtered particles generated by sputtering a target by the ion energy of generated plasma and vaporized particles obtained by ionizing the vaporized component obtained by heating an evaporation source by the plasma to a substrate surface. A holding unit for holding the substrate with the thin-film forming surface facing the side wall of the vacuum chamber, a rotating table for rotating the holding unit in the vacuum chamber, and a sputter surface in the vacuum chamber. And a target placed along the side of the vacuum chamber in a direction Body having a hollow portion detachably provided in the through hole, a gas introduction pipe for introducing the inert gas into the hollow part of the shield body, and a gas exit pipe near the outlet of the gas introduced by the gas introduction pipe. And the evaporation source provided in the hollow portion.

[0010] Further, two evaporation sources are provided in the hollow portion near the outlet of the gas introduced by the gas introduction pipe, and these evaporation sources are made of the same or two or more different elements. A configuration may be adopted in which a changeover switch is provided for selectively supplying power for heating the evaporation source to any of the evaporation sources.

Further, the manufacturing apparatus of the present invention comprises a unit in which a shield body having a hollow portion in which the gas introduction pipe and the evaporation source are mounted, and a unit in which the target is integrated. It may be configured to be installed on a wall surface or in the vicinity of the wall surface, and that the holding unit can hold a plurality of substrates.

According to the manufacturing method of the present invention, the sputtering and the heating of the evaporation source are performed by applying a voltage to the target electrode while injecting an inert gas in a sprayed state through the hollow portion of the shield body substantially at the center of the target. At the same time or at different timings. At this time, the sputtered particles and the ionized evaporated particles by the inert gas reach the substrate in a sprayed state, and the arrival time is short. Thus, a uniform film can be formed on the entire surface of the substrate.

When the target and the evaporation source are made of different materials, a thin film composed of multiple elements can be formed.

Furthermore, if a plurality of targets and evaporation sources are installed and the above-mentioned manufacturing is performed, a uniform and accurate thin film can be manufactured on a large-sized substrate or a plurality of substrates.

On the other hand, the manufacturing apparatus of the present invention is configured to realize the above-described manufacturing method of the present invention, and includes ionized evaporated particles from an evaporation source provided near an outlet of sputtered particles and an inert gas. Reaches the substrate in a spray state together with the injection of the inert gas, and this film formation can be performed while rotating the substrate. Therefore, a uniform and accurate thin film can be simultaneously formed on the entire surface of the substrate.

Also, since two evaporation sources are provided,
When both are the same type of evaporation source, one may be used as a supplement to the other evaporation source, and when different types of evaporation sources are used, a thin film composed of multiple elements can be formed. These evaporation sources can be selected as needed by a changeover switch.

Furthermore, since the shield body and the target on which the evaporation source is mounted are constituted by an integrated unit, when a plurality of units are installed, the installation is easy.
With such multiple installations, even for large substrates,
Further, a uniform and accurate thin film can be formed on a plurality of substrates.

[0018]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram showing a main part of a manufacturing apparatus to which an embodiment of the present manufacturing method is applied, and FIG. 2 is a schematic overall configuration diagram showing an entire configuration of the manufacturing apparatus.

The vacuum chamber 1 has
The inside is connected to a vacuum pump (not shown) for setting a predetermined vacuum state. The first sputtering unit 10 # 10 and the second sputtering unit 2
A plurality of 0 ‥ 20 are provided in the vertical direction.
As shown in FIG. 1, the first sputtering unit 10 # 10 is provided with a target 3 made of copper placed inside the vacuum chamber 1 with its sputtered surface facing, and the target 3 and the target electrode 3a. It comprises a permanent magnet 6 arranged outside the vacuum chamber 1 and a yoke 9 provided in contact with the permanent magnet 6. Further, a through hole is formed at a substantially central portion of the target 3, and a cylindrical shield 2 having an inclined portion 2a whose one end is opened outward is fitted into the through hole. The shield body 2 is provided with a gas introduction pipe 4 for introducing an inert gas into the vacuum chamber 1. Near the gas injection port 4 a of the gas introduction pipe 4, there is a container 5 b for accommodating an evaporation source. Is provided with two evaporation sources 5, each of which is provided with a container 5b.
The evaporation source 5 is heated and evaporated by the evaporation coil 5a wound around the peripheral wall of the heating device. The power supply to each of the evaporation coils 5a is selectively performed by a switch 7c. The material of the evaporation source 5 is copper. The voltage supplied to the target electrode 3a is a voltage from an RF power supply 8a as an AC power supply via a matching box 7a for impedance matching, and a DC power supply for sputtering connected in series to a low-pass filter circuit 7b. 8b is superimposed and applied.

On the other hand, the second sputtering unit 20 # 20
Is the target 23 made of chromium and the target electrode 2
It is constituted by a permanent magnet 26 disposed outside the vacuum chamber 1 via 3a, and a DC power is supplied to the target electrode 23.

In the vacuum chamber 1, substrates S ₁ and S _{2 on} which thin films are to be formed are formed on the target surfaces 3 and 2 respectively.
3 are held by the substrate holder 12 so as to face each other. The substrate holder 12 includes a motor (not shown)
It is installed on a rotary table 11 that rotates and drives the inside of the vacuum chamber 1.

Next, a method of forming a thin film (three-layered thin film of Cr-Cu-Cr) on the surfaces of the substrates S ₁ and S ₂ using the thin film manufacturing apparatus having the above-described structure will be described.

First, the inside of the vacuum chamber 1 is set to a predetermined degree of vacuum by a vacuum pump, and then the substrates S ₁ and S _{2 on} which a thin film is to be formed are loaded through a loading port (not shown) of the vacuum chamber 1. It is mounted on the holder 12. The rotating table 11 is rotated by a motor, and the substrate S (S ₁ and S ₂ are collectively referred to as S hereinafter) is arranged at a position facing the target 23 of the second sputtering unit 20. Next, by applying a voltage to the target electrode 23a,
Is sputtered, Cr particles adhere to the substrate S, and a Cr film is formed.

Next, the substrate S on which the Cr particles are formed
Is arranged at a position facing the target 3 of the first sputtering unit 10. Here, Ar as an inert gas is introduced into the vacuum chamber 1 from the gas injection pipe 4 and the matching box 7 is attached to the target electrode 3 a of the target 3.
The target 3 is sputtered by applying a voltage in which a voltage from the RF power supply 8a connected via the DC power supply a and a voltage from the sputtering DC power supply 8b connected in series to the low-pass filter circuit 7b are superimposed. Thereby, Cu particles are generated and the substrate S
Adheres to At the same time, the voltage from the evaporation power supply 8c is applied to the current introduction terminal 7d selected by the switch 7c.
To the evaporation coil 5a to heat the evaporation source 5. At this time, the Cu particles evaporated from the evaporation source 5 are ejected together with the inert gas ejected from the vicinity thereof, move to the substrate S side, and adhere thereto. In other words, C
Due to the attachment of the u particles, the substrate S is in a state where a thin film composed of two layers of Cr—Cu is formed.

Thereafter, the substrate S is further arranged at a position facing the target 23 of the second sputtering unit 20,
In the same manner as above, the Cr particles are again adhered to the substrate S,
A thin film composed of three layers of Cr-Cu-Cr is formed.

The substrate S used in the present embodiment is a large-sized substrate, which is provided with a plurality of sputter units 10 and 20 in the vertical direction of the side wall of the vacuum chamber 1 so that sputtered particles and evaporated particles can be removed. Since the attachment area can be increased, and the inert gas is introduced in the above-described configuration, these particles can reach the substrate S in a short time, and a uniform and accurate film can be formed. Can be.

In this embodiment, the evaporation source is the same element (C
u), and when one of them is consumed, the switch is switched to the other by the changeover switch 7c to continuously generate evaporated particles of Cu.

In this embodiment, Cr-Cu-Cr
Although the case where a film is formed has been described, various types of thin films can be formed by combining the target 23, the target 3, and the evaporation source 5.

For example, the target 23 is made of Ti (titanium).
When the target 3 is made of W (tungsten) and the evaporation source 5 is made of Al (aluminum), Ti-
An Al (W) -Ti film is formed.

In the present embodiment, the first sputter unit 10 and the second sputter unit 20 are combined, but the present invention is not limited to this.
A multi-element thin film can be formed only by the sputtering unit 10. For example, the target 3 of the first sputtering unit 10 is composed of Ti, and the evaporation source 5 is composed of Ti.
When N ₂ (nitrogen gas) or NH ₃ (ammonia gas) is used as the reactive gas, a TiN film can be formed. Further, if one of the evaporation sources 5 is made of Cr and the other of the evaporation sources 5 is made of Cu and the switch is appropriately switched by the changeover switch 7c, the Cr-C
It is also possible to form a u-Cr film.

In the case where the material of the target 3 and the material of the evaporation source 5 are different, it is possible to control the multi-element thin film structure to be formed by shifting the timing of the sputtering of the target and the injection of the evaporated particles.

As described above, the target, the material of the evaporation source, and the type of the inert gas may be determined according to the film forming conditions, and the timing and time for generating each particle may be controlled.

Further, the disposition positions and directions of the first sputter unit 10 and the second sputter unit 20 are not limited to the embodiment, but can be set as appropriate according to the size and number of the substrates.

The configuration of the evaporation source is not limited to the one used in the above-described embodiment. For example, a boat type or crucible type evaporation source can be used.

A configuration in which a boat type is used as an evaporation source will be described below. FIG. 3 is a partial sectional view showing an example of this boat type.

This evaporation source 55 has one side wall opened on the upper surface of a boron nitride formed in a plate shape, and is surrounded by three side walls 33 formed substantially vertically.
The side wall 33 has a configuration in which a concave portion 31 having a bottom portion 34 that is substantially perpendicular to the plane is formed. Also,
In the bottom portion 34, four through holes 32 penetrating the boron nitride are formed perpendicular to the bottom portion 34 at positions near the side wall.

The evaporation source 5 shown in FIGS.
When 5 is used, an aluminum wire 35 is supplied as a heat source of evaporation of the evaporation source 55 via the gas introduction pipe 4, and the end of the aluminum wire 35 is arranged so as to touch the bottom 34 of the evaporation source 55. In this configuration, when the high-temperature aluminum wire 35 touches the bottom 34, the boron nitride evaporates instantaneously. The evaporated particles diffuse above the evaporation source 55, also diffuse through the through-hole 32 to the back side of the evaporation source 55, and further move and adhere to the substrate S side together with the inert gas. As described above, since the evaporating particles are also diffused to the back surface side of the evaporation source 55 through the through holes 32, the diffusion range is widened, and the evaporating particles are uniformly adhered, and the adhering area and adhesion force are increased. It becomes possible.

In this example of the boat type, the preferred configuration is provided with four through-holes. However, the present invention is not limited to this configuration. Can be.

[0039]

As described above, according to the method for manufacturing a thin film of the present invention, the substrate surface is opposed to the sputter surface of the target, and the through-hole is formed through the substantially central portion of the target. The sputtering of the target and the heating of the evaporation source are performed simultaneously or at different timings while introducing an inert gas into the vacuum chamber through the hollow portion of the shield body detachably fitted, and the generated sputtered particles and evaporated particles are removed. Since the inert gas is introduced to reach the substrate surface in the spray state, the sputtered particles and the evaporated particles reach the substrate surface in a short time, and a uniform and accurate thin film can be formed. When the target and the evaporation source are made of different materials, various thin films composed of multiple elements can be formed. Further, if a plurality of targets and evaporation sources are provided, a thin film can be formed on a large substrate or on a plurality of substrates at the same time.

Further, according to the manufacturing apparatus of the present invention, the substrate holding portion, the rotary table for rotating the holding portion in the vacuum chamber, and the side surface of the vacuum chamber with the sputtering surface directed inward of the vacuum chamber. And a shield body penetrating a substantially central portion of the target, a gas introduction pipe for introducing an inert gas into a hollow portion of the shield body, and an evaporation source near an outlet of the introduced gas. With the configuration provided, sputtered particles and evaporated particles are:
Since the thin film can be formed in a short time in the injection state together with the injection of the inert gas and can be formed while rotating the substrate, a uniform and accurate thin film can be formed on the entire surface of the substrate.

Since two evaporation sources are provided,
When both are the same type of evaporation source, one may be used as a supplement to the other evaporation source, or when different types of evaporation sources are used, a thin film composed of multiple elements can be formed,
It is possible to appropriately respond to the film forming conditions. Furthermore,
Since the shield body and the target to which the evaporation source is attached are configured as an integrated unit, the installation work is easy even if a plurality of units are installed. By providing a plurality of such substrates, uniform and accurate thin film formation can be performed simultaneously on a large substrate or on a plurality of substrates.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing a main part of an embodiment of a thin film manufacturing apparatus of the present invention.

FIG. 2 is a schematic overall configuration diagram showing an overall configuration of a thin film manufacturing apparatus according to an embodiment of the present invention.

FIG. 3 is a partial sectional view of a boat type evaporation source applied to the embodiment of the present invention.

FIG. 4 is a diagram showing a configuration of a conventional thin film manufacturing apparatus.

[Explanation of symbols]

 Reference Signs List 1 vacuum chamber 2 shield body 3 target 3a target electrode 4 gas introduction tube 5 evaporation source 6 permanent magnet 7c switch 10 first sputter unit 11 rotation Table 12 ‥‥ substrate holder

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[Procedure amendment]

[Submission date] March 5, 1999

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0007

[Correction method] Change

[Correction contents]

[0007]

In order to solve the above-mentioned object, a method of manufacturing a thin film according to the present invention comprises introducing an inert gas into a vacuum chamber, and sputtering a target by ion energy of plasma generated near the target. Sputtered particles generated by the evaporation, and evaporated particles obtained by ionizing the evaporation component obtained by heating the evaporation source by the plasma,
In the method of forming a thin film by adhering to a surface of a substrate, the target may be perpendicular to a bottom surface of the vacuum chamber with the sputtering surface facing the inside of the vacuum chamber .
One, placed along the side of the vacuum chamber, with the substrate surface facing the sputtering surface of this target,
Sputtering of the target and heating of the evaporation source while introducing the inert gas into the vacuum chamber through a hollow portion of the shield body removably fitted into a through hole penetrating a substantially central portion of the target. Simultaneously or at different timings, the generated sputtered particles and evaporated particles are introduced at the same time or at different timings to the inert gas to reach the substrate surface in a spray state,
It is characterized by forming a thin film.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0008

[Correction method] Change

[Correction contents]

It is preferable that the target and the evaporation source are made of different materials. Further, while providing a plurality of the target and the evaporation source, the shield body is removably fitted to each target,
The above-mentioned inert gas may be introduced into the hollow portion of the shield body. Further, the evaporation source is placed on the upper surface.
Forming a plate-like molded body having a concave portion, and the concave portion
Penetrates the molded body vertically inside the molded body
A boat-like molded body with a plurality of through holes formed,
Supply aluminum wire through the hollow part of the shield
At the same time, this aluminum wire evaporates
Temperature and let this aluminum wire abut against the recess
As a result, it is instantaneously evaporated and the evaporated particles
It is good also as a structure guide | induced to the said board | substrate with an active gas.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0009

[Correction method] Change

[Correction contents]

The apparatus of the present invention for applying the above-described method for producing a thin film includes a gas introducing pipe for introducing an inert gas into a vacuum chamber, an evaporation source and a target, and is provided near the target. To form a thin film by adhering sputtered particles generated by sputtering a target by the ion energy of generated plasma and vaporized particles obtained by ionizing the vaporized component obtained by heating an evaporation source by the plasma to a substrate surface. Apparatus, wherein the substrate is perpendicular to the bottom surface of the vacuum chamber and
A holding portion for holding a state with its thin film formation surface on the vacuum chamber side wall, and a rotary table for rotating the holder in the vacuum chamber, the vacuum chamber in a state of facing the sputtering surface into the vacuum chamber inwardly Perpendicular to the bottom and
A target disposed along the side surface of the vacuum chamber , a shield having a hollow portion detachably provided in a through hole penetrating a substantially central portion of the target, and the inert gas in the hollow of the shield. And an evaporation source provided in the hollow portion near the outlet of the gas introduced by the gas introduction tube.

[Procedure amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0011

[Correction method] Change

[Correction contents]

Further, the manufacturing apparatus of the present invention comprises a unit in which a shield body having a hollow portion in which the gas introduction pipe and the evaporation source are mounted, and a unit in which the target is integrated. It may be configured to be installed on a wall surface or in the vicinity of the wall surface, and that the holding unit can hold a plurality of substrates. Ma
Furthermore, the above-mentioned evaporation source has a plate shape having a concave portion formed on the upper surface.
Of the molded body, and penetrates the molded body in the recess
Molded body having a through hole formed therein and the seal
Aluminum wire supplied through the hollow part of the
May be configured.

[Procedure amendment 6]

[Document name to be amended] Statement

[Correction target item name] 0014

[Correction method] Change

[Correction contents]

Furthermore, if a plurality of targets and evaporation sources are installed and the above-mentioned manufacturing is performed, a uniform and accurate thin film can be manufactured on a large-sized substrate or a plurality of substrates. Further, the evaporation source is the above-mentioned boat-shaped molded body, and
Aluminum through the hollow part of the shield
If a configuration in which the aluminum wire is supplied is used,
By continuously supplying aluminum wire as
The evaporating particles can reach the substrate continuously.
You.

[Procedure amendment 7]

[Document name to be amended] Statement

[Correction target item name] 0020

[Correction method] Change

[Correction contents]

On the other hand, the second sputtering unit 20 # 20
Is the target 23 made of chromium and the target electrode 2
It is constituted by a permanent magnet 26 arranged outside the vacuum chamber 1 via 3a, and a DC power is supplied to the target electrode 23a.

[Procedure amendment 8]

[Document name to be amended] Statement

[Correction target item name] 0037

[Correction method] Change

[Correction contents]

The evaporation source 5 shown in FIGS.
When using a 5, A aluminum wire 35 is supplied through the gas inlet tube 4, the distal end of the aluminum wire 35 is arranged to touch the bottom 34 of the evaporation source 55. This configuration <br/> smell Te, when A aluminum wire 35 touches the bottom 34 of the high-temperature, aluminum is instantaneously evaporated. And this
With aluminum vapor particles diffuse into the evaporation source 55 upward, through the through-hole 32 is also diffused into the back surface side of the evaporation source 55, and further moved in the injection state with an inert gas to the substrate S ₁ side, adheres. As described above, since the evaporating particles are also diffused to the back surface side of the evaporation source 55 through the through holes 32, the diffusion range is widened, and the evaporating particles are uniformly adhered, and the adhering area and the adhering force are increased. It becomes possible.

[Procedure amendment 9]

[Document name to be amended] Statement

[Correction target item name] 0039

[Correction method] Change

[Correction contents]

[0039]

As described above, according to the method for manufacturing a thin film of the present invention, the substrate surface is opposed to the sputter surface of the target, and the through-hole is formed through the substantially central portion of the target. The sputtering of the target and the heating of the evaporation source are performed simultaneously or at different timings while introducing an inert gas into the vacuum chamber through the hollow portion of the shield body detachably fitted, and the generated sputtered particles and evaporated particles are removed. Since the inert gas is introduced to reach the substrate surface in the spray state, the sputtered particles and the evaporated particles reach the substrate surface in a short time, and a uniform and accurate thin film can be formed. When the target and the evaporation source are made of different materials, various thin films composed of multiple elements can be formed. Further, if a plurality of targets and evaporation sources are provided, a thin film can be formed on a large substrate or on a plurality of substrates at the same time. Also, the evaporation source
A boat-shaped body was formed and aluminum was inserted into the recess of this body.
Wire, and this aluminum wire is instantaneously
And evaporating the evaporated particles together with the inert gas.
When the method of leading to the substrate is adopted, the aluminum wire
Continuous supply over a long time by wire feed
In the meantime, the evaporated particles can be continuously supplied to the substrate.
Therefore, even large substrates can be adequately mass-produced.
Responsive and control the supply of aluminum wire
Thus, the film thickness can be controlled.

[Procedure amendment 10]

[Document name to be amended] Statement

[Correction target item name] 0041

[Correction method] Change

[Correction contents]

Since two evaporation sources are provided,
When both are the same type of evaporation source, one may be used as a supplement to the other evaporation source, or when different types of evaporation sources are used, a thin film composed of multiple elements can be formed,
It is possible to appropriately respond to the film forming conditions. Furthermore,
Since the shield body and the target to which the evaporation source is attached are configured as an integrated unit, the installation work is easy even if a plurality of units are installed. By providing a plurality of such substrates, uniform and accurate thin film formation can be performed simultaneously on a large substrate or on a plurality of substrates. In addition, boat-shaped molding
If a body is used, a large amount of large
It can fully cope with the production, and the thickness control of the thin film to be manufactured
It will be possible.

[Procedure amendment 11]

[Document name to be amended] Statement

[Correction target item name] Figure 3

[Correction method] Change

[Correction contents]

FIG. 3

Claims (6)

[Claims] An inert gas is introduced into a vacuum chamber, and sputter particles generated by sputtering a target by ion energy of plasma generated in the vicinity of the target and an evaporation component obtained by heating an evaporation source are converted by the plasma. In the method of forming a thin film by attaching ionized evaporated particles to a substrate surface, the target is placed along the side of the vacuum chamber with the sputtering surface facing the inside of the vacuum chamber, and the substrate surface is removed. In a state where the inert gas is opposed to the sputtering surface of the target, the inert gas is introduced into the vacuum chamber through a hollow portion of a shield body detachably fitted into a through hole penetrating a substantially central portion of the target. While performing the sputtering of the target and the heating of the evaporation source simultaneously or at different timings. Introducing the generated sputtered particles and the evaporated particles simultaneously or at different timings inert gas to reach the substrate surface in the injection state, the method of manufacturing a thin film, which comprises forming a thin film. 2. The method according to claim 1, wherein the target and the evaporation source are made of different materials. 3. The apparatus according to claim 1, wherein a plurality of said targets and evaporation sources are provided, and said shield is detachably fitted into each of said targets, and said inert gas is introduced into a hollow portion of said shield. 1 or 2
3. The method for producing a thin film according to item 1. 4. A gas introduction pipe for introducing an inert gas into a vacuum chamber, an evaporation source and a target, and sputter particles generated by sputtering the target by ion energy of plasma generated near the target. An apparatus for forming a thin film by adhering evaporation particles obtained by heating an evaporation source and evaporation particles ionized by the plasma to the substrate surface,
A holding unit for holding the substrate with the thin film forming surface facing the side wall of the vacuum chamber, a rotating table for rotating the holding unit in the vacuum chamber, and a sputter surface with the sputtering surface facing the inside of the vacuum chamber. A target disposed along the side of the vacuum chamber, a shield having a hollow portion detachably provided in a through-hole penetrating a substantially central portion of the target, and an inert gas provided in the hollow of the shield. A thin film manufacturing apparatus, comprising: a gas introduction pipe for introducing the gas; and the evaporation source provided in the hollow portion near an outlet of a gas introduced by the gas introduction pipe. 5. Two evaporation sources are provided in the hollow portion near the outlet of the gas introduced by the gas introduction pipe, and these evaporation sources are made of the same or two or more different elements. 5. The thin film manufacturing apparatus according to claim 4, further comprising a changeover switch for selectively supplying a power supply for heating the evaporation source to any one of the evaporation sources. 6. A unit in which a shield body having a hollow portion to which the gas introduction tube and the evaporation source are mounted and the target are integrated, and a plurality of such units are installed on the vacuum chamber wall surface or near the wall surface. The thin film manufacturing apparatus according to claim 4, wherein the holding unit is configured to hold a plurality of substrates.