JP2003138371A - Method and apparatus for manufacturing thin film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and an apparatus for film deposition in which a film is uniformly deposited even on a large substrate with high accuracy. SOLUTION: A target 3 is installed along a side surface of a vacuum chamber 1 and perpendicular to a bottom surface of the vacuum chamber 1 with a sputtering surface directed inward of the vacuum chamber 1, and a substrate surface faces the sputtering surface of the target 3. A high frequency coil 53 is disposed in a through hole 5 so as not to be brought into contact with an inner circumferential surface 51b of the through hole while the high frequency coil 53 is wound around the outer circumference of a cylindrical insulator 51. A heater 52 to cover the inner circumferential surface 51b is provided on the cylindrical insulator 51. An evaporation source 59 is fed in the vicinity of the heater 52 while introducing the inert gas in the cylindrical insulator 51 via a gas introduction pipe 54, and the target 3 is sputtered and the evaporation source 59 is heated simultaneously or at different timing.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film manufacturing apparatus provided with a sputtering target and an evaporation source, and a method for manufacturing a thin film using the apparatus.

[0002]

2. Description of the Related Art When a multi-component thin film having a relatively thick film thickness of about 1 .mu.m is uniformly formed on a substrate, it is necessary to speed up the film formation due to factors such as film precision. As a device therefor, Japanese Patent Application Laid-Open No. 55-94473 discloses an ion plating device provided with a sputtering target and an evaporation source.

This device, as shown in FIG. 4, has a vacuum chamber 41.
The substrate 46 fixedly provided inside the vacuum chamber 4
1, an evaporation source 45 provided below, a target 42 and a sputtering electrode 43 provided between the substrate 46 and the evaporation source 45, and an evaporation source 45 side for generating gas discharge plasma. It also comprises an anode 44 and a hot cathode 47 provided on the substrate 46 side. In the apparatus having this configuration, the evaporation source 45 is heated in the vacuum chamber 41 into which gas is introduced from the gas supply source 48 to evaporate at a constant rate, and the evaporated evaporation component particles are ionized in the gas discharge plasma, and By applying a high frequency electric field to the sputtering electrode 43 and sputtering the target 42, the substrate 46
A film of evaporation component and sputtering component is formed on the top.

[0004]

In the structure of the above ion plating apparatus, the evaporation source 45 provided in the vacuum chamber 41 is provided at a position facing the substrate 46, but the target 42 is provided as the substrate 46. Since it is provided almost vertically in the vicinity of, the sputter particles generated from the target 42 cannot reach the large-sized substrate which is in high demand in recent years, and a uniform film cannot be formed. was there.

Further, the distance between the substrate 46 and the evaporation source 45 is also a distance at which the ionized evaporation component cannot reach the substrate in a short time, and there is a problem that the film accuracy is poor.

The present invention has been made to solve the above problems, and provides a film forming method and an apparatus for forming a large-sized film uniformly and accurately on a substrate. With the goal.

[0007]

In order to achieve the above object, a method of manufacturing a thin film according to the present invention is designed so that an inert gas is introduced into a vacuum chamber through a gas introducing pipe to generate plasma in the vicinity of a target. In the method of forming a thin film by adhering to the substrate surface, sputtered particles generated when the target is sputtered by ion energy, and evaporated particles obtained by ionizing the evaporation component obtained by heating the evaporation source by the plasma, A state in which the target is placed vertically to the bottom of the vacuum chamber with the sputtering surface facing inward of the vacuum chamber and along the side surface of the vacuum chamber, and the substrate surface is opposed to the sputtering surface of the target. And a cylindrical insulator inside the through-hole penetrating substantially the center of the target. A high-frequency coil is wound around and the high-frequency coil is arranged with a gap so as not to contact the inner peripheral surface of the through hole, and a heating element that covers the inner peripheral surface of the cylindrical insulator is provided. While the inert gas is being introduced into the cylindrical insulator from one opening of the cylindrical insulator through the gas introduction pipe, the evaporation source is supplied in the vicinity of the heating element, and the target is provided. The sputtering and the heating of the evaporation source are performed simultaneously or at different timings, and the sputtered particles and evaporated particles generated are introduced at the same time or at different timings to reach the substrate surface in a jet state to form a thin film. (Hereinafter, referred to as Invention 1).

In this structure, a part of the other opening of the cylindrical insulator may be closed.

The target and the evaporation source may be made of different materials.

Further, in the method for producing a thin film of the present invention, an inert gas is introduced into the vacuum chamber through a gas introducing pipe,
By attaching the sputtered particles generated when the target is sputtered by the ion energy of the plasma generated in the vicinity of the target, and the evaporated particles obtained by ionizing the evaporation component obtained by heating the evaporation source by the plasma, to the substrate surface. In the method of forming a thin film,
A plurality of the targets are installed vertically to the bottom of the vacuum chamber with the sputtering surface facing inward of the vacuum chamber, and vertically along the side surface of the vacuum chamber, and the target substrate is placed on the substrate surface. In a state of facing the sputtering surface, in each through hole penetrating substantially the center of each target, a cylindrical insulator, respectively, in a state in which a high-frequency coil is wound around the outer periphery of the cylindrical insulator,
Moreover, the high-frequency coil is arranged with a gap so as not to come into contact with the inner peripheral surface of the through hole, and a heating element is provided to cover the inner peripheral surface of the cylindrical insulator, and one opening of the cylindrical insulator is provided. From the above through the gas introduction pipe, while introducing the inert gas into the cylindrical insulator, respectively, supplies the evaporation source in the vicinity of each heating element, the sputtering of the target and the heating of each evaporation source. It is also possible to adopt a configuration in which the thin film is formed by carrying out simultaneously or at different timings, the sputtered particles and vaporized particles generated are introduced simultaneously or with different timings to reach the surface of the substrate in a jetted state, and ( Hereinafter referred to as Invention 2.)

A thin film manufacturing apparatus of the present invention for applying the above thin film manufacturing method includes a gas introducing pipe for introducing an inert gas into a vacuum chamber, an evaporation source and a target, and the gas is generated in the vicinity of the target. Sputtered particles generated when the target is sputtered by the ion energy of plasma, and evaporated particles obtained by ionizing the evaporation component obtained by heating the evaporation source by the plasma,
An apparatus for forming a thin film by adhering it to the surface of a substrate, comprising: a holding unit that holds the substrate with the thin film forming surface facing the side wall of the vacuum chamber; and rotating the holding unit in the vacuum chamber. A rotary table, a target installed perpendicularly to the bottom surface of the vacuum chamber and along the side surface of the vacuum chamber with the sputtering surface facing inward, and a through hole penetrating substantially the center of the target. A cylindrical insulator having a high-frequency coil wound around the outer periphery thereof and having a gap so as not to contact the high-frequency coil with the inner peripheral surface of the through hole, and the cylindrical insulation. A heating element that covers the inner peripheral surface of the body, and the evaporation source is configured to be supplied to the vicinity of the heating element from one opening side of the cylindrical insulator through the gas introduction pipe. Is characterized by being (hereinafter, referred to as Invention 3).

In this structure, a member for closing a part of the opening may be provided in the other opening of the cylindrical insulator.

Further, the gas introducing pipe and the evaporation source are mounted, and a cylindrical insulator having a high-frequency coil wound around the outer periphery and the target are integrated into a unit. , Each of which is installed vertically to the bottom of the vacuum chamber with the sputtering surface facing inward of the vacuum chamber, and vertically in the vacuum chamber wall surface or in the vicinity of the wall surface, and the holding portion is a plurality of substrates. May be retained (hereinafter, referred to as Invention 4).

According to the manufacturing method of the first aspect of the present invention, with the above configuration,
While injecting an inert gas in a jet state through a gas introduction pipe introduced into a cylindrical insulator arranged in the substantially central portion of the target, sputtering and heating of the evaporation source by applying a voltage to the target electrode can be performed. It is performed simultaneously or at different timing. At this time, through the gas introduction pipe,
The vapor deposition material supplied together with the gas undergoes flash vaporization by the heating element heated by the induction heating of the high frequency coil, and immediately becomes vaporized particles. Thereafter, the vaporized particles reach the substrate in a jet state together with the sputtered particles due to the inert gas, so that the arrival time of both particles is short. As a result, a high-quality film with few impurities is uniformly formed on the entire surface of the substrate.

Further, in the above structure, a member for closing a part of the opening may be provided in the other opening of the cylindrical insulator through which the vaporized particles are jetted.

When this structure is adopted, the jetting force of the vaporized particles is further increased, and a film having less impurities can be obtained.

Further, when the evaporation source is powder, it is possible to prevent the powder itself from scattering.

If the target and the evaporation source are made of different substances, a thin film composed of multiple elements can be formed.

Further, the manufacturing method of the second aspect of the invention can be applied to a large substrate or a plurality of substrates, and even in this case, a good quality film containing few impurities can be uniformly formed on the substrate.

On the other hand, the manufacturing apparatus of the third aspect of the invention is configured to realize the above-described manufacturing method of the first aspect of the invention, in which the sputtered particles and the vaporized particles reach the substrate in a jet state together with the jetting of the inert gas, The arrival time of both particles is short. Moreover, since this film formation is performed while rotating the substrate, it is possible to form a uniform and high-quality film with few impurities on the entire surface of the substrate.

Further, the manufacturing apparatus of the invention 4 has a construction for realizing the manufacturing method of the invention 2, and since it is composed of a unit in which the cylindrical insulator and the target are integrated, a plurality of them are provided. When installing, the installation work is easy. With such a plurality of installations, a high-quality film containing few impurities can be uniformly formed on a large-sized substrate and a plurality of substrates.

[0022]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram showing a main part of one manufacturing apparatus to which the embodiment of the present manufacturing method is applied, and FIG. 2 is a schematic overall configuration diagram showing the entire structure of the manufacturing apparatus.

The vacuum chamber 1 includes the vacuum chamber 1
A vacuum pump (not shown) that brings the inside into a predetermined vacuum state is connected. The first sputtering unit 10 ... 10 and the second sputtering unit 2 are provided on the side wall of the vacuum chamber 1.
A plurality of 0 ... 20 are installed in the vertical direction. As shown in FIG. 1, the first sputtering unit 10 ...
A target 3 made of copper, which is installed in the vacuum chamber 1 with its sputtering surface facing, and the target 3
And a permanent magnet 6 arranged outside the vacuum chamber 1 via the target electrode 3a and a yoke 9 provided in contact with the permanent magnet 6. Further, a through hole 5 is formed in a substantially central portion of the target 3, and the through hole 5
A cylindrical insulator 51 made of quartz has a high-frequency coil 53 wound around the outer periphery thereof, and a constant gap is interposed so that the high-frequency coil 53 does not contact the through-hole inner peripheral surface 5a. It is provided in the opened state. Electric power is supplied to the high frequency coil 53 by the high frequency power source 8a. Further, the cylindrical insulator 51 is provided with a heating element 52 made of cylindrical carbon that covers the entire inner peripheral surface 51b. Since the heating element 58 is made of carbon, it can be heated to a high temperature of about 2500 ° C. Further, a gas introduction pipe 54 is provided near the heating element 52, and a gas such as argon or helium is introduced by the inert gas supply system 50,
A linear vapor deposition material 59 such as aluminum is continuously supplied. Further, a reaction gas is supplied into the vacuum chamber 1 by a reaction gas supply system 71.

When power is supplied to the high-frequency coil 53 wound around the cylindrical insulator 51, the heating element 52 is induction-heated by the induction current, and the vapor deposition material 59 introduced by the gas introduction pipe 54 is instantly evaporated. (Flash evaporation). Then, the vaporized particles are jetted together with the inert gas from the other opening 51B of the cylindrical insulator 51.
In the present embodiment, the heating element 52 is uniformly heated by such induction heating.

As the material of the evaporation source 59, a wire material such as copper, aluminum or titanium is appropriately supplied according to the application.

The voltage supplied to the target electrode 3a is connected to the voltage from the RF power source 8a, which is an AC power source, via the matching box 7a for impedance matching, and the spatter connected in series to the low pass filter circuit 7b. The voltage from the DC power source 8b for use is superimposed and applied.

On the other hand, the second sputtering unit 20 ... 20
Is a target 23 and a target electrode 2 made of chromium.
It is configured by a permanent magnet 26 arranged outside the vacuum chamber 1 via 3a, and a DC power source is supplied to the target electrode 23.

Further, in the vacuum chamber 1, the substrates S ₁ and S _{2 on} which thin films are to be formed have targets 3 and ₂ on their formation surfaces.
3 are held by the substrate holder 12 so as to face each other. This substrate holder 12 is a motor (not shown)
It is installed on a rotary table 11 that rotationally drives the inside of the vacuum chamber 1.

Next, a method for forming a thin film (three-layer structure thin film made of Cr-Cu-Cr) on the surfaces of the substrates S1 and S2 using the thin film manufacturing apparatus having the above-mentioned structure will be described.

First, after the inside of the vacuum chamber 1 is set to a predetermined degree of vacuum by a vacuum pump, the substrates S1 and S2 on which a thin film is to be formed are loaded from a loading port (not shown) of the vacuum chamber 1 and the substrate holder 12 Attach to. The turntable 11 is rotated by a motor, and the substrate S (S1 and S2 are collectively referred to as S below) is arranged at a position facing the target 23 of the second sputtering unit 20. Next, by applying a voltage to the target electrode 23a, the target 23
Are sputtered, Cr particles adhere to the substrate S, and a Cr film is formed.

Next, the substrate S on which the Cr particles are formed
Are arranged at positions facing the target 3 of the first sputtering unit 10. Here, Ar is supplied as an inert gas from the gas introduction pipe 54 into the cylindrical insulator 51, and
An RF power source 8a connected to the target electrode 3a of the target 3 via a matching box 7a and a DC power source 8b for sputtering connected in series to the low pass filter circuit 7b.
The target 3 is sputtered by applying a voltage in which the voltages from and are superimposed. As a result, Cu particles are generated and adhere to the substrate S. At the same time, RF power supply 8a to 50K
A voltage of Hz to 400 KHz is supplied to the high frequency coil 53 to heat the heating element 52. At this time, the vapor deposition material 59 made of linear Cu is continuously supplied. The vapor deposition material 59 supplied is flash-evaporated by the heating element 52 and immediately becomes vaporized particles (Cu particles). The vaporized particles (Cu particles) are jetted together with the inert gas supplied in the vicinity thereof into the jetting state through the openings 51B, reach the substrate S at a high speed, and are deposited.

In this way, the substrate S is made of Cr--Cu 2
A thin film composed of layers is formed.

Thereafter, the substrate S is further placed at a position facing the target 23 of the second sputtering unit 20,
By adhering the Cr particles to the substrate S again in the same manner as described above, a thin film composed of three layers of Cr—Cu—Cr is formed.

The substrate S used in this embodiment is a large-sized substrate. This is because a plurality of sputtering units 10 and 20 are installed in the vertical direction on the side wall of the vacuum chamber 1, so that sputtered particles and evaporated particles Since the adhesion area can be increased and the vaporized particles (Cu particles) are jetted together with the inert gas, these particles can reach the substrate S in a short time, and the accuracy of the impurities is small. A good uniform film can be formed.

In the present embodiment, Cr-Cu-Cr is used.
Although the case of forming a film has been described, various thin film configurations can be formed by combining the target 23, the target 3, and the evaporation source 59.

For example, the target 23 is Ti (titanium).
Then, the target 3 is W (tungsten) and the evaporation source 59
If each is composed of Al (aluminum), Ti
A -Al (W) -Ti film is formed.

Although the first sputtering unit 10 and the second sputtering unit 20 are combined in the present embodiment, the present invention is not limited to this.
A multi-element thin film may be formed only by the sputtering unit 10. For example, when the target 3 of the first sputtering unit 10 is made of Ti and the evaporation source 5 is made of Ti, and N ₂ (nitrogen gas) or NH ₃ (ammonia gas) is used as the reactive gas, a TiN film is formed. can do.

When the target 3 and the evaporation source 59 are made of different materials, it is possible to control the multi-element thin film structure to be formed by shifting the timings of sputtering of the target and injection of evaporated particles.

Further, the case where the AlN film is formed using only the first sputtering unit 10 will be specifically described.

First, the heating element is heated to 2500 ° C. by applying an electric power of 3 kW for 1 hour. Al as evaporation source
A wire is supplied and Ar gas is introduced as an inert gas to keep the cylindrical insulator in an inert atmosphere. The target is Al. By introducing N ₂ gas as a reaction gas, the plasma near the target causes
₂ Gas reacts with Al to form AlN.

As described above, the target, the material of the evaporation source and the type of the inert gas may be determined according to the film forming conditions, and the timing and time for generating the respective particles may be controlled.

Further, the arrangement positions and directions of the first sputtering unit 10 and the second sputtering unit 20 are not limited to those in the embodiment, and can be set appropriately according to the size and number of substrates.

In this embodiment, the heating element 52 is
Although the entire inner peripheral surface 51b is covered, the shape and the ratio of the area to the inner peripheral surface 51b are not limited. The material of the heating element 52 is a material that is heated by induction heating, and it is sufficient that the evaporation source can be flash evaporated or sublimated, and besides, a heat resistant material (resistor) such as boron nitride is used.

As described above, in the present embodiment, since the heating element can be uniformly heated by the induction heating, it is possible to supply powder such as Si and SiO as the evaporation source.

Next, as another embodiment of the present invention, the structure of the thin film manufacturing apparatus in the case of using such powder as the evaporation source will be described.

3A and 3B are views for explaining another embodiment of the thin film manufacturing apparatus of the present invention. FIG. 3A is a schematic configuration diagram showing the main part thereof, and FIG. It is the figure which looked at the injection port of from the front.

This embodiment differs from the above-mentioned embodiments in that the shape of the heating element, the structure for supplying the powder, and the cover 60 for preventing the powder from scattering. . Here, description of the configuration common to the above-described embodiment will be omitted.

First, the heating element 58 is formed with an annular edge 58a in which the end of the heating element 58 is folded back, and the opening 51C has a circular shape. The area of the opening 51C is smaller than the cross-sectional area of the cylindrical insulator 51, and this structure further enhances the jetting strength of vaporized particles. Further, a cover 60 made of a heat resistant metal such as stainless steel or titanium is provided in the opening 51C,
A large number of small holes 60a are formed in the cover 60. The evaporated particles sublimated from the evaporation source 69 are jetted together with the inert gas through the holes 60a. Further, the evaporation source 69 and a gas introduction pipe 64 for supplying an inert gas.
Is connected to a gas supply system (not shown) and a hopper 66. The evaporation source 69 is appropriately supplied from the hopper 66 by driving the motor 63, and the inert gas is also introduced at a predetermined timing.

Here, using this thin film manufacturing apparatus, SiO
The case of forming a film will be specifically described.

First, the heating element 58 is heated to 1500.degree. SiO powder as the evaporation source 69 (particle size 0.5 to 1.7 m
m) is supplied and Ar gas is introduced as an inert gas to keep the inside of the cylindrical insulator 51 in an inert atmosphere. The target is Si. The target is discharged by the target electrode, and SiO evaporated from the cylindrical insulator 51 by the plasma in the vicinity of the target.
Forms SiON by reaction with N ₂ gas introduced as a reactive gas.

Further, in the present embodiment, the shape of the edge portion 58a of the heating element 58 is ring-shaped, but the shape is not limited to this, and the shape may be such that the opening 51C is narrowed.

Although the vapor deposition material is supplied in the form of a linear body or powder in the above-described embodiment, a granular vapor deposition material may be supplied and can be appropriately selected.

[0053]

As described above, according to the method of manufacturing a thin film of Invention 1, the target is perpendicular to the bottom of the vacuum chamber and along the side surface of the vacuum chamber with the sputtering surface facing the inside of the vacuum chamber. In addition, the substrate surface is made to face the sputtering surface of this target, and the inside of the through hole that penetrates approximately the center of the target is
A heating element that covers the inner peripheral surface of the cylindrical insulator around which the high-frequency coil is wound is provided, and while the inert gas is introduced through the gas introduction pipe, the evaporation source is supplied near the heating element and the target The sputtering and the evaporation source are heated simultaneously or at different timings, and the generated sputtered particles and evaporated particles are introduced at the same time or at different timings so as to reach the substrate surface in a jet state. The vaporized particles can reach the surface of the substrate in a short time, and as a result, an accurate thin film with few impurities can be uniformly formed. Further, the heating element can be heated uniformly by induction heating, and the type and form of the material serving as the evaporation source can be linear, granular, or powder.

Further, in the case of adopting a structure in which a part of the other opening of the cylindrical insulator is closed, the vaporized particles can have a higher jetting force and shorten the time to reach the substrate surface. Therefore, the deterioration of the film quality due to the impurities can be further suppressed.

Further, if the target and the evaporation source are made of different substances, a thin film composed of multiple elements can be formed, and it is possible to cope with thin film production for various uses.

Furthermore, according to the thin film manufacturing method of the second aspect of the present invention, it is possible to form a thin film on a large substrate or on a plurality of substrates simultaneously, and it is possible to sufficiently cope with mass production.

The manufacturing apparatus of the invention 3 and the invention 4 are
It is provided with a configuration that enables the manufacturing method of the present invention to be realized,
It is excellent in the above-mentioned effects of the present invention, that is, it is possible to form a high-quality film having a uniform amount and less impurities on the entire surface of the substrate. Further, in the manufacturing apparatus of the present invention, when a unit in which the cylindrical insulator and the target are integrated is adopted, the installation work is easy even when a plurality of units are installed. Further, by installing such a plurality of units, it is also advantageous in that a high-quality film containing few impurities can be uniformly formed on a large-sized substrate and a plurality of substrates.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram showing a main part of an embodiment of a thin film manufacturing apparatus of the present invention.

FIG. 2 is a schematic overall configuration diagram showing an overall configuration of an embodiment of a thin film manufacturing apparatus of the present invention.

3A and 3B are views for explaining another embodiment of the thin film manufacturing apparatus of the present invention, in which FIG. 3A is a schematic configuration diagram showing a main part thereof, and FIG. 3B is a spray port for vaporized particles. It is the figure which looked at from the front.

FIG. 4 is a diagram showing a configuration of a conventional thin film manufacturing apparatus.

[Explanation of symbols]

1 ... vacuum chamber 3 ... Target 3a ... Target electrode 5 ... through hole 51 ... Cylindrical insulator 52, 58 ... Heating element 58a ... Edge 53 ... high frequency coil 54, 64 ... Gas introduction pipe 59, 69 ... Evaporation source 6 ... Permanent magnet 7c ... Switch 10 ... 1st sputter unit 11 ... Turntable 12 ... Board holder

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Claims (7)

[Claims] 1. An inert gas is introduced into a vacuum chamber through a gas introducing pipe to heat sputtered particles generated when a target is sputtered by ion energy of plasma generated near the target and an evaporation source. In the method of forming a thin film by adhering the vaporized particles obtained by ionizing the obtained vaporized components by the plasma to the surface of the substrate, the target is perpendicular to the bottom of the vacuum chamber with the sputtering surface facing inward of the vacuum chamber. And along with the side surface of the vacuum chamber, the substrate surface is made to face the sputtering surface of the target, and a cylindrical insulator is provided in a through hole penetrating substantially the center of the target. , With the high-frequency coil wound around the outer periphery of the cylindrical insulator, and in the through-hole Arranged in a state that there is a gap so as not to contact the surface, a heating element that covers the inner peripheral surface of the cylindrical insulator is provided, and through one of the openings of the cylindrical insulator through the gas introduction pipe, While introducing the inert gas into the cylindrical insulator, the evaporation source is supplied in the vicinity of the heating element, the sputtering of the target and the heating of the evaporation source are performed simultaneously or at different timings, and the generated sputtered particles and A method for producing a thin film, characterized in that vaporized particles are introduced at the same time or at different timings to reach the surface of the substrate in a jet state to form a thin film. 2. The method for producing a thin film according to claim 1, wherein a part of the other opening of the cylindrical insulator is closed. 3. The method for producing a thin film according to claim 1, wherein the target and the evaporation source are made of different materials. 4. An inert gas is introduced into the vacuum chamber through a gas introduction pipe, and the sputtering source generated by sputtering the target by the ion energy of plasma generated near the target and the evaporation source are heated. In the method of forming a thin film by adhering the vaporized particles obtained by ionizing the obtained vaporized components by the plasma to the substrate surface, a plurality of the targets are vacuumed in a state in which the respective sputtering surfaces are directed to the inside of the vacuum chamber. Each through hole that is installed vertically to the bottom surface of the chamber and vertically along the side surface of the vacuum chamber, with the substrate surface facing the sputtering surface of this target, and that penetrates the substantially central portion of each target. Inside each of the cylindrical insulators, with the high-frequency coil wound around the outer periphery of the cylindrical insulator, The high-frequency coil is arranged with a gap so that it does not come into contact with the inner peripheral surface of the through hole, and a heating element that covers the inner peripheral surface of the cylindrical insulator is provided. From the above through the gas introduction pipe, while introducing the inert gas into the cylindrical insulator, respectively supplies the evaporation source in the vicinity of each heating element,
Sputtering of the target and heating of each evaporation source are performed simultaneously or at different timings, and sputtered particles and vaporized particles generated are introduced into the substrate surface in an injection state by introducing the inert gas at the same time or with different timing, and a thin film is formed. Forming a thin film. 5. A sputter particle which is provided with a gas introduction pipe for introducing an inert gas into a vacuum chamber, an evaporation source and a target, and which is generated when the target is sputtered by the ion energy of plasma generated in the vicinity of the target, A device for forming a thin film by depositing evaporation particles obtained by ionizing evaporation components obtained by heating an evaporation source by the plasma on the surface of the substrate, wherein the substrate is formed on the sidewall of the vacuum chamber. A holding part for holding the surface in a state of facing, a rotary table for rotating the holding part in the vacuum chamber, and a vertical direction to the bottom surface of the vacuum chamber and its vacuum with the sputtering surface facing inward of the vacuum chamber. The target installed along the side of the chamber and the through hole that penetrates the center of this target A cylindrical insulator having a high-frequency coil wound around it, and a high-frequency coil disposed with a gap so that the high-frequency coil does not contact the inner peripheral surface of the through hole, and the inner periphery of the cylindrical insulator. A heating element covering the surface, and the evaporation source is configured to be supplied from the one opening side of the cylindrical insulator to the vicinity of the heating element via the gas introduction pipe. Thin film manufacturing equipment. 6. The member according to claim 5, wherein a member for closing a part of the opening is provided at the other opening of the cylindrical insulator from which the vaporized particles are jetted. Thin film manufacturing equipment. 7. The gas introducing pipe and the evaporation source are mounted,
In addition, it is composed of a unit in which a cylindrical insulator having a high-frequency coil wound around the outer periphery and the target are integrated. A plurality of these units are vacuumed in a state in which the sputtering surface faces the inside of the vacuum chamber. 6. The vacuum chamber is vertically installed on the bottom surface of the chamber and in the vertical direction on the wall surface of the vacuum chamber or in the vicinity of the wall surface, and the holding unit is configured to hold a plurality of substrates. Alternatively, the thin-film manufacturing apparatus according to Item 6.