JPH07173623A - Film forming device - Google Patents

Abstract

PURPOSE:To provide a film forming device which can control the film thickness and adjust the composition by simultaneously sputtering a plurality of targets, provide uniform erosion of the targets, and sufficiently supplement nitrogen or oxygen. CONSTITUTION:In a film forming device where a substrate and a plurality of targets 24 are arranged opposite to each other in a vacuum chamber 21, and the targets are sputtered by the ion during the plasma discharge to manufacture the film, a substrate rotating mechanism where the substrate 25 is loaded, an active gas feeding mechanism 28 to feed the active nitrogen or the active oxygen into the vacuum chamber 21, and the targets 24 are mouned on a cathode 23, and a helical coil 33 is arranged so that the center axis may be perpendicular to the surface of the targets. A high vacuum and high speed plasma sputter source 22 where a high frequency oscillating source 34 is connected to the helical coil 33 is provided. This constitution forms the film on the surface of the substrate in the high vacuum.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming apparatus used for forming a nitride thin film or an oxide thin film on the surface of a substrate provided in a high vacuum.

[0002]

2. Description of the Related Art There are various conventional thin film forming apparatuses, and a first example thereof is shown in FIG. In the figure,
The cathode 2 is arranged in the lower part of the vacuum chamber 1,
A target 3 is placed on the cathode 2. A substrate 4 is arranged in the upper part of the vacuum chamber 1 so as to face the cathode 2 and the target 3, and a substrate heating mechanism 5 is arranged behind the substrate 4. Further, a shutter 6 is arranged in front of the substrate 4 in the direction of the target 3. A sputtering power source 7 is connected to the cathode 2. In the figure, 8 is a film thickness monitor.

In the first conventional example as described above, a plasma discharge is generated between the cathode 2 and the substrate 4, and after confirming that the plasma discharge is stable and the sputtering speed is stable, the shutter 6 is turned on. The sputtered particles ejected from the target 3 adhere to the surface of the substrate 4 which is opened and heated by the substrate heating mechanism 5, and a thin film is formed there.

Next, a second example of the conventional device is shown in FIG. In the figure, two cathodes 2 are arranged in parallel in the lower part of the vacuum chamber 1, and a target 3 is placed on each cathode 2. Vacuum chamber 1
A substrate turntable 9 on which a substrate 4 is placed is arranged in the upper part of the inside so as to face the cathode 2 and the target 3. Other reference numerals that are the same as those in FIG. 3 showing the first example of the conventional device are the same and the description thereof will be omitted.

Also in such a second conventional example, plasma discharge occurs between the cathode 2 and the substrate 4, and the target 3 is sputtered by the ions in the plasma, so that the substrate 4
The sputtered particles protruding from the target 3 adhere to the surface of the to form a thin film. At that time, since the target 3 is placed on each cathode 2, it is possible to sputter one target 3 and then another target 3 to form a multilayer film on the surface of the substrate 4. You can

Next, a third example of the conventional device is shown in FIG. In the figure, two cathodes 2 are arranged in parallel in a V shape in the lower part of the vacuum chamber 1, and a target 3 is placed on each cathode 2. A substrate rotating mechanism 10 on which a substrate 4 is placed is arranged in the upper part of the vacuum chamber 1 so as to face the cathode 2 and the target 3. Other reference numerals that are the same as those in FIG. 3 showing the first example of the conventional device are the same and the description thereof will be omitted.

Also in the third conventional example as described above, plasma discharge occurs between the cathode 2 and the substrate 4, the ion target 3 in the plasma is sputtered, and the surface of the substrate 4 is sputtered from the target 3. The particles adhere to form a thin film. At this time, since the target 3 is placed on the cathodes 2 arranged in parallel in a V shape, the target material can be simultaneously attached to the surface of the substrate 4.

[0008]

In the first example of the conventional thin film forming apparatus, since the distance between the cathode 2 and the substrate 4 where the plasma discharge occurs is short as described above,
There are restrictions on the arrangement of the film thickness monitor 8. Therefore, depending on the arrangement of the film thickness monitor 8, there is a difference between the film thickness actually formed on the surface of the substrate 4 and the film thickness displayed on the film thickness monitor 8, and accurate film thickness control is possible. There was a problem that I could not do it.

The second example has the following problems in addition to the problems of the first example. That is, the second example is one in which one target 3 is sputtered and then another target 3 is sputtered to form a multilayer film on the surface of the substrate 4, and the targets 3 are not simultaneously sputtered. . Therefore, there is a problem that the composition ratio of the thin film formed on the surface of the substrate 4 cannot be adjusted.

Further, in the third example, the targets 3 on the cathodes 2 arranged in parallel in a V-shape can be sputtered at the same time, but the erosion of each target 3 is not always uniform, which is not possible. The problem that it becomes easy to become uniform occurred.

Furthermore, in the first, second and third examples, nitrogen gas, ammonia gas or oxygen gas is supplied to supplement nitrogen or oxygen, but it is not always perfect. There was a problem.

An object of the present invention is to solve the above-mentioned problems of the prior art, to simultaneously sputter a plurality of targets, to control the film thickness of a thin film and to adjust the composition ratio, and to make the erosion of the target uniform. An object of the present invention is to provide a thin film forming apparatus capable of sufficiently supplementing nitrogen or oxygen.

[0013]

In order to achieve the above object, the present invention provides a substrate and a plurality of targets facing each other in a vacuum chamber, and sputters the targets with ions in plasma discharge. In a thin film forming apparatus for forming a thin film on a surface of a substrate, a substrate rotating mechanism on which the substrate is placed, an active gas supply mechanism for supplying active nitrogen or active oxygen into the vacuum chamber, and the target attached to a cathode A plurality of high-vacuum high-speed plasma sputtering sources in which a helical coil is arranged so that the central axis thereof is orthogonal to the target surface and a high-frequency oscillation source is connected to the helical coil are provided.

[0014]

In the present invention, a discharge is generated between the substrate and the cathode to generate plasma, but the helicon wave in the plasma is excited by the helical coil to generate high-density plasma in the high-vacuum high-speed plasma sputtering source. . Ions in this high-density plasma sputter the target, and the sputtered particles adhere to the substrate to form a thin film there. At that time, a plurality of targets can be simultaneously sputtered, and the substrate can be rotated by the substrate rotating mechanism, so that the film thickness and the composition ratio can be adjusted. Further, since an active gas supply mechanism for supplying active nitrogen or active oxygen is provided in the vacuum chamber, it is possible to supplement nitrogen or oxygen in the vacuum chamber, and a thin film can be formed while nitriding or oxidizing. Like

[0015]

Embodiments of the present invention will be described below with reference to the drawings. A thin film forming apparatus according to an embodiment of the present invention is shown in FIG. 1, in which a vacuum chamber 2
Two high-vacuum high-speed plasma sputtering sources 2 are provided in the lower part of
2 are arranged in parallel in a V shape, and the target 2 is placed on the cathode 23 of the high-vacuum high-speed plasma sputtering source 22.
4 is placed. A substrate rotating mechanism 26 on which a substrate 25 is placed is arranged in the upper portion of the vacuum chamber 21.
5 faces the target 24. A substrate heating mechanism 27 is arranged behind the substrate 25. Further, a shutter 38 is arranged on the target 24 side in front of the high vacuum high speed plasma sputtering source 22. Further, the vacuum chamber 21 is provided with an active gas supply mechanism 28, and the active gas supply mechanism 28 supplies active nitrogen or active oxygen into the vacuum chamber 21. An active gas supply mechanism power source 29 and an active gas supply mechanism gas control device 30 are connected to the active gas supply mechanism 28. In the figure, 31 is a film thickness monitor.

FIG. 2 shows a high vacuum high speed plasma sputtering source 22.
In the same figure, the cathode 23 is attached to the lower part of the vacuum case 32, and the cathode 2
A target 24 is placed on the surface 3. A helical coil 33 is arranged in the vacuum case 32, and the central axis of the helical coil 33 is orthogonal to the surface of the target 24. A high frequency oscillation source 34 is connected to the helical coil 33. In FIG. 2, 35 is an electromagnet, 36 is a high frequency power source, and 37 is a permanent magnet.

In such an embodiment, a discharge is generated between the substrate 25 and the cathode 23 to generate plasma, but the helicon wave in the plasma is excited by the helical coil 33, and the inside of the high vacuum high speed plasma sputtering source 22. High density plasma is generated at. Ions in the high-density plasma sputter the target 24, and the sputtered particles adhere to the substrate 25 to form a thin film there. At that time, a plurality of targets 24 can be simultaneously sputtered, and the substrate 25 can be rotated by the substrate rotating mechanism 26, so that the film thickness and the composition ratio can be adjusted. Further, an active gas supply mechanism 2 for supplying active nitrogen or active oxygen into the vacuum chamber 21.
8 is provided, it becomes possible to supplement nitrogen or oxygen in the vacuum chamber 21, and it becomes possible to form a thin film while nitriding or oxidizing.

[0018]

The present invention has the following effects. Since the target is sputtered by the ions in the high-density plasma in the high-vacuum high-speed plasma sputtering source to form a thin film on the substrate, the film thickness actually formed on the surface of the substrate 25 and the film thickness monitor 31 The difference from the film thickness displayed on the screen becomes small, and accurate film thickness control becomes possible. A plurality of targets can be simultaneously sputtered, and the substrate can be rotated by the substrate rotating mechanism, so that the film thickness and composition ratio can be adjusted. Since an active gas supply mechanism for supplying active nitrogen or active oxygen is provided in the vacuum chamber, it becomes possible to supplement nitrogen or oxygen in the vacuum chamber, so that a thin film can be formed while nitriding or oxidizing. Become. Since the target is sputtered by the ions in the high-density plasma in the high-vacuum high-speed plasma sputtering source, the target can be uniformly eroded.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of an embodiment of the present invention.

FIG. 2 is an explanatory view showing details of a high vacuum high speed plasma sputtering source used in an embodiment of the present invention.

FIG. 3 is an explanatory view showing a first example of a conventional thin film forming apparatus.

FIG. 4 is an explanatory view showing a second example of a conventional thin film forming apparatus.

FIG. 5 is an explanatory view showing a third example of a conventional thin film forming apparatus.

[Explanation of symbols]

 21 --- Vacuum chamber 22 --- High-vacuum high-speed plasma sputtering source 23 --- Cathode 24 --- Target 25 --- Substrate 26 ··· Substrate rotating mechanism 27 ··· Substrate heating mechanism 28 ··· · Active gas supply mechanism 29 ··· · Power supply for active gas supply mechanism 30・ ・ ・ ・ ・ ・ ・ Gas control device for active gas supply mechanism 31 ・ ・ ・ ・ Film thickness monitor 32 ・ ・ ・ ・ ・ ・ Vacuum case 33 ・ ・ ・ ・ ・ ・ Helical coil 34 ・ ・ ・・ ・ ・ ・ High-frequency oscillator 35 ・ ・ ・ ・ Electromagnet 36 ・ ・ ・ ・ ・ ・ High-frequency power supply 37 ・ ・ ・ ・ ・ ・ Permanent magnet 38 ・ ・ ・ ・ ・ ・ Shatter

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Office reference number FI technical display location H01L 21/31

Claims (1)

[Claims] 1. A thin film forming apparatus in which a substrate and a plurality of targets are arranged to face each other in a vacuum chamber, and the target is sputtered by ions in plasma discharge to form a thin film on the surface of the substrate. The mounted substrate rotating mechanism, the active gas supply mechanism for supplying active nitrogen or active oxygen into the vacuum chamber, the target attached to the cathode, and the helical coil arranged so that the central axis is orthogonal to the target surface. A thin film forming apparatus provided with a plurality of high-vacuum high-speed plasma sputtering sources, each of which has a helical coil connected to a high-frequency oscillation source.