JPH11188647A - Grinding body - Google Patents

Abstract

PROBLEM TO BE SOLVED: To uniformly and smoothly grind a surface of a semi-conductor substrate consisting of many dissimilar materials by containing the powder of the specific quality having the Moh's hardness and the mean grain size in the specific range in abrasive granules, and containing the binder having the functional group to capture metallic ions. SOLUTION: An abrasive layer is provided on a flexible carrier such as a polyester film, in which the abrasive containing >=60% powder of 40-1000 nm in mean grain size of at least one kind out of silica, zirconia, titanium oxide, cerium oxide, red iron oxide, and garnet which are 6-7 in Moh's hardness, is diffused in the binder. The binder contains the binder having the functional group to capture metallic ions. The means surface roughness Ra at the center line of the surface of the abrasive layer is preferably 1-5000 nm. The metallic ion pollution from the abrasive body when a metal is ground, is determined so that Na, K and Cr is respectively 150 ppb or less.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, in particular, aluminum, silicon, copper, a photoresist material, or the like, in which a polishing layer formed by dispersing an abrasive in a binder is provided on a flexible support. The present invention relates to a polishing body for polishing semiconductors.

[0002]

2. Description of the Related Art Conventionally, semiconductors have been polished using a polishing pad and a polishing slurry containing an abrasive.
Since many different materials are polished, sufficient results are not necessarily obtained in yield and the like. In other words, in the case of using the polishing slurry, there are many abrasives that do not contribute to polishing, and the polishing efficiency is low.

[0003] Further, since the semiconductor silicon wafer as the object to be polished is made of glass, it is made of only a hard abrasive having a Mohs hardness of more than 7, which is used in a conventional abrasive for magnetic head polishing. However, even if the particle size is adjusted, the polishing surface is damaged, and good polishing cannot be performed.

Japanese Patent Application Laid-Open No. Hei 9-248771 and the like disclose a method for polishing the surface of an optical connector ferrule made of glass and ceramic materials having different hardnesses.
There is disclosed a polishing body technique for preventing a step from occurring on a polishing surface due to the difference in hardness. This polishing body uses silica particles having an average particle diameter of 5 to 30 μm as an abrasive, and the center line average surface roughness Ra of the polishing layer surface is 0.005 to 0.2 μm.
m.

On the other hand, as a polishing body for polishing a magnetic head or a hard disk disclosed in Japanese Patent Application Laid-Open No. 1-264776, the polishing agent has a Mohs hardness of 5-7.
And the second abrasive having a Mohs hardness of 8.5 or more are mixed and used, and the average particle diameter is 0.07 to 0.40 μm.
Is disclosed.

[0006]

However, with the above-described optical connector ferrule or the polishing body for polishing a magnetic head, it is difficult to smoothly polish the surface of a different material of a semiconductor without generating a step.

That is, aluminum,
Many different materials such as silicon, photoresist resin, tungsten, copper, and gold are included, and in order to manufacture a multilayer substrate, it is necessary to uniformly polish these to obtain a smooth surface.

In view of the above, the present invention has been made in view of the above points, and is intended to provide a polishing body such as a polishing tape or a polishing sheet having a flexible support provided with a polishing layer comprising fine abrasive powder and a binder. It is an object of the present invention to provide a polished body having improved polishing characteristics so that the surface of a semiconductor substrate made of many different materials can be uniformly and smoothly polished.

[0009]

According to the present invention, there is provided a polishing body having a polishing layer comprising fine abrasive powder and a binder provided on a flexible support, wherein the fine abrasive particles have a Mohs hardness. 6-7, average particle size 40-1000n
m, and the binder contains a binder having a functional group that captures metal ions.

The fine abrasive powder is silica (Mohs hardness 7), zirconia (Mohs hardness 7), titanium oxide (Mohs hardness 6 to 7), cerium oxide (Mohs hardness 7), and bengara (Mohs hardness 6). And at least one of garnet (Mohs hardness 7). Further, the center line average surface roughness Ra of the polishing layer surface is set to 1
It is desirable to set it to 〜5000 nm.

On the other hand, it is preferred that the metal ion contamination amount from the polishing body when polishing the metal is provided so that Na, K, and Cr are 150 ppb or less.

The functional group for capturing metal ions in the binder is preferably an acidic functional group or a functional group having a chelating effect.

[0013]

According to the present invention as described above, the abrasive fine particles in the polishing layer contain 60% or more of powder having a Mohs' hardness of 6 to 7 and an average particle size of 40 to 1000 nm, so that many different materials can be obtained. The surface of the semiconductor substrate made of can be an ultra-smooth surface with a small step so that the center line average surface roughness Ra after polishing becomes 5 nm or less.

At this time, by containing at least 60% of an abrasive containing at least one of silica, zirconia, titanium oxide, cerium oxide, red iron oxide, and garnet having a Mohs' hardness of 6 to 7, the hardness is close to that of a semiconductor and is appropriate. The polishing control can be easily performed by the polishing time.

In particular, the center line average surface roughness of the surface of the polishing layer
When Ra is 1 to 5000 nm, a further ultra-smooth surface of the object to be polished can be obtained.

[0016] Further, by containing a binder having a functional group for capturing metal ions in the binder of the polishing layer, the impurity ions of the polishing body can be controlled or retained or reduced in the polishing layer, so that the metal layer when polishing the metal can be used. The amount of metal ion contamination from the polishing body is 15 for Na, K, and Cr.
It can be 0 ppb or less. This prevents ions implanted into the semiconductor from shortening the life of carrier electrons.

Further, by polishing the object to be polished by the polishing body, the polishing can be performed with high yield and high efficiency as compared with the one using polishing slurry.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the polishing body of the present invention will be shown, and the present invention will be described in more detail.

The abrasive of the present invention has a mean particle size of at least one of silica, zirconia, titanium oxide, cerium oxide, red iron oxide and garnet having a Mohs' hardness of 6 to 7 on a flexible support made of a polyester film or the like. A polishing layer in which a polishing agent containing 60% or more of a polishing agent having a thickness of 1000 nm or more is dispersed in a binder is provided, and the binder includes a binder having a functional group that captures metal ions. Also, the center line average surface roughness Ra of the polishing layer surface is 1 to 5000 nm.

On the other hand, when the metal is polished, the amount of metal ion contamination from the polished body is set so that Na, K and Cr are 150 ppb or less. , An acidic functional group or a functional group having a chelating effect, and a compound having these functional groups is used as a binder.

The object to be polished (semiconductor substrate) is polished while at least one of the object to be polished and the object to be polished is rotated. The rotation speed is 10 rpm or more, and the feed speed of the object to be polished is 10 mm. / Min. This movement of the polishing body also has the effect of removing polishing residue.

The abrasive fine powder used in the polishing layer of the present invention contains an abrasive having a Mohs hardness of 6 to 7 and an average particle size of 40 to 1000 nm in an amount of 60% or more of the total amount of the powder. Examples of the abrasive having a Mohs hardness of 6 to 7 include silica (Mohs hardness 7), zirconia (Mohs hardness 7), titanium oxide (Mohs hardness 6 to 7), cerium oxide (Mohs hardness 7), and bengara (Mohs hardness 6). Garnet (Mohs hardness 7).

Powders (abrasives) other than those described above to be mixed in the polishing layer are generally materials having a polishing action or a polishing action, and include α-alumina, γ-alumina, α, γ-alumina,
Fused alumina, silicon carbide, chromium oxide, corundum, artificial diamond, diamond, α-iron oxide, silicon nitride, boron nitride, molybdenum carbide, boron carbide, tungsten carbide, titanium carbide, etc., mainly having a Mohs hardness of 7
The above materials can be used in combinations of up to four types.
These abrasives have an average particle size of 40 to 1000 nm.
Is used. These abrasives have a binder of 10 to 10 parts by weight of the abrasive in the case of a polishing layer.
Used in the range of 1000 parts by weight.

Specific examples of the abrasive include AKP1, AKP15, AKP20, AKP30 and AK manufactured by Sumitomo Chemical Co., Ltd.
P50, AKP80, Hit50, Hit100 and the like. These are described in JP-B-52-28642.
No., JP-B-49-39402, JP-A-63-9882
8, U.S. Pat. No. 3,687,725, U.S. Pat.
No. 07, U.S. Pat. No. 3,041,196, U.S. Pat.
066, U.S. Pat. No. 3,630,910, U.S. Pat.
No. 3412, US Pat. No. 4,117,190, British Patent 11
No. 45349 and West German Patent No. 853211.

As the binder used in the polishing layer of the present invention, conventionally known thermoplastic resins, thermosetting resins, reactive resins, electron beam curable resins, ultraviolet curable resins, visible light curable resins, and the like Is used.

As the thermoplastic resin, the softening temperature is 200
C. or lower, having an average molecular weight of 10,000 to 300,000 and a degree of polymerization of about 50 to 2,000, more preferably 20 to 2,000.
It is about 0 to 800. For example, vinyl chloride vinyl acetate copolymer, vinyl chloride copolymer, vinyl chloride vinyl acetate vinyl alcohol copolymer, vinyl chloride vinyl alcohol copolymer, vinyl chloride vinylidene copolymer, vinyl acrylonitrile copolymer, acrylic acid Ester acrylonitrile copolymer, acrylate vinylidene chloride copolymer, acrylate styrene copolymer, methacrylate acrylonitrile copolymer,
Methacrylic acid ester vinylidene chloride copolymer, methacrylic acid ester styrene copolymer, urethane elastomer, nylon-silicone resin, nitrocellulose-polyamide resin, polyfucca vinyl, vinylidene chloride acrylonitrile copolymer, butadiene acrylonitrile copolymer, polyamide Resins, polyvinyl butyral, cellulose derivatives (cellulose acetate butyrate, cellulose diacetate, cellulose triacetate, cellulose propionate, nitrocellulose, ethyl cellulose, methyl cellulose, propyl cellulose, methyl ethyl cellulose, carboxymethyl cellulose,
Acetylcellulose), various synthetic rubber-based thermoplastic resins such as styrene-butadiene copolymer, polyester resin, polycarbonate resin, chlorovinyl ether acrylate copolymer, amino resin, polyamide resin, and mixtures thereof. .

Examples of these resins are described in JP-B-37-68.
No. 77, JP-B-39-12528, JP-B-39-19
No. 282, No. 40-5349, No. 40-20
No. 907, JP-B-41-9463, JP-B-41-14
No. 059, JP-B-41-16985, JP-B-42-6
No. 428, JP-B-42-11621, JP-B-43-4
No. 623, JP-B-43-15206, JP-B-44-2
No. 889, No. 44-17947, No. 44-1
No. 8232, No. 45-14020, No. 45-
14500, JP-B-47-18573, JP-B-47
-22063, JP-B-47-2264, JP-B-4
7-22068, JP-B-47-22069, JP-B-47-22070, JP-B-47-27886, JP-A-57-133521, JP-A-58-137133, JP-A-58-166533, and JP-A-58-166533. 58-222433,
JP-A-59-58642 and the like, U.S. Pat.
And U.S. Pat. No. 4,752,530.

As the thermosetting resin or the reactive resin,
It is preferable that the molecular weight of the coating liquid is 200,000 or less, and the molecular weight becomes infinite by a reaction such as condensation and addition by heating and humidifying after coating and drying. Among these resins, those which do not soften or melt before the resin is thermally decomposed are preferable. Specifically, for example, phenol resin, phenoxy resin, epoxy resin,
Polyurethane resin, polyester resin, polyurethane polycarbonate resin, urea resin, melamine resin, alkyd resin, silicone resin, acrylic reaction resin (electron beam curing resin), epoxy-polyamide resin, nitrocellulose melamine resin, high molecular weight polyester resin and isocyanate resin Mixture of polymers, mixture of methacrylate copolymer and diisocyanate prepolymer, mixture of polyester polyol and polyisocyanate, urea formaldehyde resin, mixture of low molecular weight glycol / high molecular weight diol / triphenylmethane triisocyanate, polyamine resin, polyimine Resins and mixtures thereof.

Examples of these resins are described in JP-B-39-810.
No. 3, JP-B-40-9779, JP-B-41-7192
No., JP-B-41-8016, JP-B-41-14275
No., JP-B-42-18179, JP-B-43-1208
No. 1, Japanese Patent Publication No. 44-28023, Japanese Patent Publication No. 45-145
No. 01, JP-B-45-24902, JP-B-46-13
103, JP-B-47-2265, JP-B-47-2
No. 2066, JP-B-47-22067, JP-B-47-
22072, JP-B-47-22073, JP-B-47
-28045, JP-B-47-28048, JP-B-4
It is described in publications such as 7-28922.

These thermoplastic resins, thermosetting resins, and reactive resins have carboxylic acid (COOM), sulfinic acid, sulfenic acid, sulfonic acid (SO ₃ M), phosphoric acid (PO) as functional groups other than the main functional groups. (OM) (OM)), phosphonic acid, sulfuric acid (OSO ₃ M), and acidic groups such as ester groups thereof (M is H, an alkali metal, an alkaline earth metal,
Hydrocarbon groups), amino acids; aminosulfonic acids, sulfuric acid or phosphoric acid esters of amino alcohols, amphoteric groups such as alkyl betaine, amino groups, imino groups, imide groups, amide groups, etc., and also hydroxyl groups, alkoxyl groups, Thiol group, alkylthio group, halogen group (F, Cl, B
r, I), usually containing at least one but not more than six kinds of silyl groups, siloxane groups, epoxy groups, isocyanato groups, cyano groups, nitrile groups, oxo groups, acryl groups and phosphine groups, each functional group being 1 to 1 g of resin. × 10 ^-6 eq to 1 × 10
^-2 eq is preferred.

As the binder for the polishing layer of the present invention, the above-mentioned binder can be used, and the binder further includes a binder having a functional group for capturing metal ions. The functional group that captures the metal ion is, for example, an acidic functional group or a functional group having a chelating effect. By controlling or retaining or reducing the impurity ions of the polishing body in the polishing layer by this functional group, the amount of metal ion contamination from the polishing body when polishing metal is reduced to Na,
The amount of the functional group that captures the metal ion is set so that the K and Cr become 150 ppb or less. As an example of a binder having a functional group that captures metal ions, Japanese Patent Publication No.
It is described in JP -9843, vinyl chloride / vinyl acetate / 2-acrylamido-2-methylpropanesulfonic acid; copolymerization ratio 90.0: 7.5: 2.5, and the like as the SO ₃ H100 wt%.

The binder having a functional group for capturing the metal ion is preferably a free polar group that is not salted (for example, -SO ₃ H), but a polar group that is salted (for example, -SO ₃ Na). ) Can be used as long as it has the ability to capture metal ions, even if it partially has). Specifically, the free polar group is preferably contained at 10% by weight or more of all the polar groups, more preferably at least 30% by weight.

The polyisocyanates used in the polishing layer of the present invention include tolylene diisocyanate, 4,4'-diphenylmethane diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, naphthylene-1,5-diisocyanate, o-toluidine diisocyanate, and isophorone diisocyanate. , Triphenylmethane triisocyanate, isocyanates such as isophorone diisocyanate, products of the isocyanates and polyalcohols, polyisocyanates of 2 to 10-mers produced by condensation of isocyanates, and products of polyisocyanates and polyurethanes Those whose terminal functional groups are isocyanates can be used. The average molecular weight of these polyisocyanates is 100
Those of 20,000 are preferred.

Commercially available trade names of these polyisocyanates include Coronate L, Coronate HL, Coronate 2030, Coronate 2031, Millionate MR, Millionate MTL (manufactured by Nippon Polyurethane Co., Ltd.), Takenate D-102, and Takenate D-110.
N, Takenate D-200, Takenate D-202, Takenate 300S, Takenate 500 (manufactured by Takeda Pharmaceutical Co., Ltd.), Sumidur T-80, Sumidur 44S, Sumidur PF, Sumidur L, Sumidur N, Desmodur L , Death module IL, death module N, death module HL, death module T65, death module 15, death module R, death module R
F, death module SL, death module Z4273
(Manufactured by Sumitomo Bayer Co., Ltd.), and these can be used alone or in combination of two or more by utilizing the difference in curing reactivity.

For the purpose of accelerating the curing reaction, a hydroxyl group (butanediol, hexanediol, having a molecular weight of 100
A compound having an amino group (such as monomethylamine, dimethylamine, or trimethylamine), a metal oxide catalyst, or a catalyst such as iron acetylacetonate can also be used in combination. It is desirable that these compounds having a hydroxyl group or an amino group are polyfunctional. These polyisocyanates have a total amount of binder resin and polyisocyanate of 10 in the polishing layer and the back layer.
It is preferably used in an amount of 2 to 70 parts by weight per 0 parts by weight, more preferably 5 to 50 parts by weight. Examples of these are disclosed in JP-A-60-131622 and JP-A-61-741.
No. 38 and the like.

In addition, compounds having various functions are added to the polishing layer as additives. For example, a dispersant, a lubricant, an antistatic agent, an antioxidant, a fungicide, a coloring agent, a solvent, and the like are added.

The powdery lubricant used in the polishing layer of the present invention includes graphite, molybdenum disulfide, boron nitride, graphite fluoride, calcium carbonate, barium sulfate, silicon oxide, titanium oxide, zinc oxide, tin oxide, and the like. Inorganic fine powder such as tungsten disulfide, acrylic styrene resin fine powder, benzoguanamine resin fine powder, melamine resin fine powder,
There are resin fine powders such as polyolefin resin fine powder, polyester resin fine powder, polyamide resin fine powder, polyimide resin fine powder, and polyhooker ethylene resin fine powder.

As the organic compound-based lubricant, silicone oil (dialkyl polysiloxane, dialkoxy polysiloxane, phenyl polysiloxane, fluoroalkyl polysiloxane (KF96, KF69 manufactured by Shin-Etsu Chemical Co., Ltd.)
)), Fatty acid-modified silicone oil, fluoroalcohol, polyolefin (polyethylene wax, polypropylene, etc.), polyglycol (ethylene glycol, polyethylene oxide wax, etc.), tetrafluoroethylene oxide wax, polytetrafluoroglycol, perfluoroalkyl ether, perfluoro Fatty acids, perfluoro fatty acid esters, perfluoroalkyl sulfates, perfluoroalkyl sulfonates, perfluoroalkylbenzene sulfonates, perfluoroalkyl phosphates, and other compounds containing fluorine or silicon, alkyl sulfates, alkyl sulfonates , Alkyl phosphonic acid triester,
Organic acids and organic acid ester compounds such as alkyl phosphonic acid monoesters, alkyl phosphonic acid diesters, alkyl phosphate esters, succinate esters, triazaindolizine, tetraazaindene, benzotriazole, benzotriazine, benzodiazole, EDTA, etc. Heterocyclic compounds containing nitrogen and sulfur, C10-4
0 monobasic fatty acid and any one or more of monohydric alcohols having 2 to 40 carbon atoms or dihydric alcohols, trihydric alcohols, tetrahydric alcohols, and hexahydric alcohols Fatty acid esters, carbon number 10
Fatty acid esters of monohydric to hexahydric alcohols having a total of 11 to 70 carbon atoms in total with at least one monobasic fatty acid and the number of carbon atoms of the fatty acid, fatty acids or fatty acid amides having 8 to 40 carbon atoms , Fatty acid alkylamides and aliphatic alcohols can also be used.

Specific examples of these compounds include butyl caprylate, octyl caprylate, ethyl laurate, butyl laurate, octyl laurate, ethyl myristate, butyl myristate, octyl myristate, 2-ethylhexyl myristate, Ethyl palmitate, butyl palmitate, octyl palmitate, 2 ethylhexyl palmitate, ethyl stearate, butyl stearate, isobutyl stearate, octyl stearate, 2 ethylhexyl stearate, amyl stearate, isoamyl stearate, 2 stearic acid
Ethylpentyl, 2-hexyldecyl stearate, isotridecyl stearate, stearic acid amide, alkyl stearate, butoxyethyl stearate,
Anhydrosorbitan monostearate, anhydrosorbitan distearate, anhydrosorbitan tristearate, anhydrosorbitan tetrastearate, oleyl oleate, oleyl alcohol, lauryl alcohol, montan wax, carnauba wax, etc. used alone or in combination it can.

The lubricant used in the present invention includes:
Lubricating oil additives can be used alone or in combination. Antioxidants known as rust inhibitors (metal chelates such as alkylphenol, benzotriazine, tetraazaindene, sulfamide, guanidine, nucleic acid, pyridine, amine, hydroquinone, EDTA, etc.) Agents), rust inhibitors (naphthenic acid, alkenyl succinic acid, phosphoric acid, dilauryl phosphate, etc.), oil agents (rapeseed oil, lauryl alcohol, etc.), extreme pressure agents (dibenzyl sulfide, tricresyl phosphate, tributyl) Phosphite, etc.), detergents / dispersants, viscosity index improvers, pour point depressants, foaming agents and the like. These lubricants are added in the range of 0.01 to 30 parts by weight based on 100 parts by weight of the binder. These are described in JP-B-43-23889 and JP-B-48-24.
No. 041, JP-B-48-18482, JP-B-44-1
8221, JP-B-47-28043, JP-B-57-5
6132, JP-A-59-8136, JP-A-59-81
39, JP-A-61-85621, U.S. Pat.
No. 233, U.S. Pat.
No. 2235, U.S. Pat. No. 3,497,411, U.S. Pat.
No. 23086, U.S. Pat. No. 3,625,760, U.S. Pat.
No. 630772, US Pat. No. 3,634,253, US Pat. No. 3,642,539, US Pat. No. 3,687,725, US Pat. No. 4,350,311, US Pat. No. 4,497,864, US Pat. No. 4,552,794, IBM Technical Disclosure Britain (IBM Technical)
Disclosure Bulletin) Vol.
9, No7, p779 (December 1966), ELEKTRONIK 1961 No12,
p380, Handbook of Chemistry, Advanced Edition, p954-967, 19
It is described in 1980 Maruzen Issuance.

Examples of the dispersing agent and dispersing agent used in the present invention include caprylic acid, capric acid, lauric acid, myristic acid, palmitic acid, stearic acid, oleic acid, elaidic acid, linoleic acid, linolenic acid, and stearolic acid. Fatty acids having 2 to 40 carbon atoms (R ₁ COOH, R ₁ is an alkyl group having ₁ to 39 carbon atoms, phenyl group, aralkyl group) such as behenic acid, maleic acid and phthalic acid; alkali metals of the above fatty acids (Li, Na, K, NH ₄ ^+, etc.) or alkaline earth metals (Mg, Ca, Ba, etc.), metal soaps (copper oleate) composed of Cu, Pb, etc., fatty acid amides; lecithin (soybean oil lecithin), etc. Is used. In addition, higher alcohols having 4 to 40 carbon atoms (butanol, octyl alcohol, myristyl alcohol, stearyl alcohol) and their sulfates, sulfonic acids, phenylsulfonic acids, alkylsulfonic acids, sulfonic esters, phosphoric monoesters, phosphoric diesters , Phosphoric acid triesters, alkylphosphonic acids, phenylphosphonic acids, amine compounds and the like can also be used. Further, polyethylene glycol, polyethylene oxide, sulfosuccinic acid, metal sulfosuccinate, sulfosuccinate, and the like can also be used. One or more of these dispersants are usually used, and one type of dispersant is used in an amount of 0.0
It is added in the range of 0.5 to 20 parts by weight. Regarding the method of using these dispersants, the dispersants may be previously adhered to the surface of the abrasive or non-abrasive fine powder, or may be added during dispersion. Such materials are disclosed, for example, in JP-B-39-28369 and JP-B-4
No. 4-17945, JP-B-44-18221, JP-B-48-7441, JP-B-48-15001, JP-B-48-15002, JP-B-48-16363, JP-B-49-39402, U.S. Pat. And No. 3470021.

The fungicides used in the present invention include 2- (4
-Thiazolyl) -benzimidazole, N- (fluorodichloromethylthio) -phthalimide, 10.10'-
Oxybisphenoxalcin, 2,4,5.6 tetrachloroisophthalonitrile, P-tolyldiiodomethylsulfone, triiodoallyl alcohol, dihydroacetoacid, mercury phenyloleate, bis (tributyltin) oxide, saltylani There are rides. Such a substance is described in, for example, "Microbial Disaster and Prevention Technology", Engineering Book, 1972, "Chemistry and Industry", 32, 904 (1979).

As the antistatic agent used in the present invention, carbon black can be used.
Thermal for rubber, black for color, acetylene black and the like can be used. Its specific surface area is 5-500
m ² / g, DBP oil absorption 10-400 ml / 100
g, pH 2-10, water content 0.1-10%, tap density 0.1-1 g / cm ² . As a specific example of this carbon black, BLACKPEARLS 2000, 1300, 1 manufactured by Cabot Corporation
000,900,800,700, manufactured by Mitsubishi Chemical Corporation:
650B, 950B, 3250B, 850, 900, 9
60,980,1000,2300,2400,260
0 and the like. In addition, carbon black that has been subjected to surface treatment with a dispersant or the like or graphitized with a resin can also be used.

As the antistatic agent other than carbon black used in the present invention, graphite, modified graphite,
Conductive powders such as carbon black graft polymer, tin oxide-antimony oxide, tin oxide, titanium oxide-tin oxide-antimony oxide; natural surfactants such as saponin; alkylene oxide-based, glycerin-based, glycidol-based, polyhydric alcohol, Nonionic surfactants such as polyhydric alcohol esters and alkylphenol EO adducts; higher alkylamines, cyclic amines, hydantoin derivatives, amidoamines, esteramides, quaternary ammonium salts, pyridine and other heterocycles, phosphoniums and sulfoniums Anionic surfactants containing acidic groups such as carboxylic acid, sulfonic acid, phosphonic acid, phosphoric acid, sulfate ester group, phosphonate ester, phosphate ester group; amino acids; aminosulfonic acids, sulfuric acid of amino alcohol Other phosphoric esters, amphoteric surfactants such as alkyl betaine type and the like are used.

Some of the examples of the surfactant compound which can be used as the antistatic agent are described in JP-A-60-28025, US Pat. Nos. 2,271,623, 2,224,472, and 22.
88226, 2676122, 2676924
Nos. 2,676,975, 2,691,566,27
27860, 2730498, 2742379
Nos. 2739891, 3068101, 31
No. 58484, No. 3201253, No. 32010191
Nos. 3,294,540, 3,415,649 and 34
No. 41413, No. 3444254, No. 3475174
No. 3,545,974, West German Patent Publication (OLS) 19
No. 42665, British Patent Nos. 1077317 and 1198
No. 450, Ryohei Oda et al., "Synthesis of Surfactants and Their Applications" (Maki Shoten, 1972 edition); W. "Surfes Active Age Entities" by Beili (Interscience Publication Corporation 1
985); P. Encyclopedia of Surfactive Agents, Vol. 2 (Chemical publishing company, 1964 edition) by Sisley; Surfactant Handbook, 6th printing (Sangyo Tosho Co., Ltd.,
December 20, 1966); Hideo Marumo, "Antistatic Agent"
Koshobo (1968) and the like.

These surfactants may be added alone or as a mixture. The amount of these surfactants used in the abrasive body is 0.01 to 10 per 100 parts by weight of the abrasive.
Parts by weight. The amount used in the back layer is binder 1
It is 0.01 to 30 parts by weight per 00 parts by weight. These are used as antistatic agents, but are sometimes applied for other purposes such as improvement of dispersion, improvement of lubricity, coating aid, wetting agent, curing accelerator, and dispersion accelerator. .

As the organic solvent used in the dispersion, kneading and coating of the present invention, ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, isophorone and tetrahydrofuran in any ratio; methanol, ethanol, propanol and butanol , Isobutyl alcohol, isopropyl alcohol, alcohols such as methylcyclohexanol; methyl acetate,
Ester systems such as ethyl acetate, butyl acetate, isobutyl acetate, isopropyl acetate, ethyl lactate and glycol monoethyl ether; ether systems such as diethyl ether, tetrahydrofuran, glycol dimethyl ether, glycol monoethyl ether and dioxane; benzene, toluene, xylene, Tar-based (aromatic hydrocarbons) such as cresol, chlorobenzene, and styrene; chlorinated hydrocarbons such as methylene chloride, ethylene chloride, carbon tetrachloride, chloroform, ethylene chlorohydrin, and dichlorobenzene; NN-dimethylformaldehyde , Hexane and the like can be used. These solvents are generally used in two or more kinds at an arbitrary ratio. Further, a trace amount of impurities (polymer of the solvent itself, moisture, raw material components, etc.) may be contained in an amount of 1% by weight or less. An aqueous solvent (water, alcohol, acetone, etc.) can be used instead of the organic solvent.

The polishing layer is formed by dissolving in an organic solvent any combination of the above-mentioned compositions and the like, and applying and drying a coating solution on a support. This support is flexible and has a thickness of 50
Approximately 300 μm (in the case of a disk or a card, the thickness is approximately 0.03 to 10 mm). Examples of materials include polyesters such as polyethylene terephthalate and polyethylene naphthalate, polyolefins such as polypropylene, cellulose derivatives such as cellulose triacetate and cellulose diacetate, vinyl resins such as polyvinyl chloride, polycarbonate, polyimide, polyamide, and polysulfone. In addition to plastics, metals such as aluminum and copper, ceramics such as glass, and paper can also be used. Prior to coating, these supports may be subjected to corona discharge treatment, plasma treatment, undercoating treatment, heat treatment, dust removal treatment, metal deposition treatment, and alkali treatment. Regarding these supports, for example, German Patent 3,338,854
A, JP-A-59-116926, JP-A-61-129
No. 731; U.S. Pat. No. 4,388,368;
"Textile and Industry", vol. 31, p. 50-55, 1975. Centerline average surface roughness of these supports
Ra is preferably 0.001 to 5.0 μm. The Young's modulus (F5 value) of these supports is ^{2 to} 30 kg / mm ² (1 kg / m ² = 9 in both the width direction and the longitudinal direction) depending on the purpose.
8 Pa) can be selected.

The method of dispersion and kneading is not particularly limited, and the order of addition of each component (resin, powder, lubricant, solvent, etc.),
The addition position during dispersion / kneading, the dispersion temperature (0 to 80 ° C.) and the like can be appropriately set. For the preparation of the abrasive paint a usual kneading machine, for example, a two-roll mill, a three-roll mill,
Ball mill, pebble mill, tron mill, sand grinder, Szegvari attritor,
High-speed impeller, disperser, high-speed stone mill, high-speed impact mill, disper, kneader, high-speed mixer, ribbon blender, co-kneader, intensive mixer, tumbler, blender, disperser, homogenizer, single-screw extruder, twin-screw extruder And an ultrasonic disperser. Usually, a plurality of these dispersing and kneading machines are provided for dispersing and kneading, and the treatment is continuously performed. For more information on kneading and dispersing technology,
T. C. PATTON (T.C.Patton) "P
aint Flow and Pigment Dis
version "(Paint Flow and Pigment Dispersion) 1964 John Wile
Published by y & Sons (John Wheelie and
Sands)) and Shinichi Tanaka, Industrial Materials, Vol. 25, 37 (19
77) and the cited reference of the book. As an auxiliary material for the dispersion and kneading, a steel ball, a steel bead, a ceramic bead, a glass bead, and an organic polymer bead having an equivalent sphere diameter of 10 cmφ to 0.05 mmφ can be used in order to efficiently promote the dispersion and kneading. These materials are not limited to spherical shapes. It is also described in specifications such as U.S. Patent Nos. 2,581,414 and 2,855,156. Also in the present invention, the coating liquid for the polishing layer can be prepared by kneading and dispersing according to the method described in the above-mentioned book or the literature cited therein.

As a method of applying the above-mentioned polishing layer on the support, simultaneous extrusion (co-extrusion) is performed together with the support in a heated and melted state, or a base (support) is extruded to form a film, and then the upper layer is formed. Is coated with a polishing layer. After laminating the polishing layer on the support as described above, the film is stretched by heating. After the film is oriented and stretched at 120 to 160 ° C., it is cooled and wound up. This stretching is carried out either vertically or horizontally or both vertically and horizontally.

When the polishing body is a polishing tape, the produced polishing tape is cut and wound around a desired plastic or metal reel. It is desirable to burnish and / or clean the abrasive tape or other abrasive body immediately before or before winding. Burnishes are designed to control the surface roughness and polishing power of the polished body.Specifically, the protrusions on the polished surface are cut with a hard material such as a sapphire blade, a razor blade, a carbide blade, a diamond blade, or a ceramic blade. Make it even or smooth. The Mohs hardness of these materials is preferably 8 or more, but is not particularly limited as long as protrusions can be removed. The shape of these materials does not need to be a blade in particular, and shapes such as a square shape, a round shape, and a wheel (these materials may be provided around a rotating cylindrical shape) can be used. The cleaning of the abrasive body is performed by wiping the surface layer of the abrasive body with a nonwoven fabric or the like in order to remove dirt and excess lubricant on the surface of the abrasive body. Such wiping materials include, for example, various types of Vilene manufactured by Japan Vilene Co., Ltd., Toraysee, Ecseine manufactured by Toray Industries, Kimwipe, various types of abrasives manufactured by Fuji Photo Film Co., Ltd. Tissue paper, such as nonwoven fabric made of rayon, nonwoven fabric made of acrylonitrile, and blended nonwoven fabric can be used. These are described, for example, in JP-B-46-39.
No. 309, JP-B-58-46768, JP-A-56-9
No. 0429, JP-B-58-46767, JP-A-63-463.
No. 259830, JP-A-1-201824 and the like.

The abrasive, binder and the like used in the present invention
Additives (lubricants, dispersants, antistatic agents, surface treatment agents, carbon black, abrasives, light-blocking agents, antioxidants, antifungal agents, etc.), solvents and supports (undercoat layer, back layer, under back) (It may have a coating layer) or the production method thereof can be referred to the production method described in JP-B-56-26890 or the like.

[0053]

EXAMPLES Examples and comparative examples of the present invention will be shown below, and the characteristics thereof will be evaluated. In the examples, "parts" indicates "parts by weight".

<Examples 1 to 5> An undercoat layer was provided on a support made of polyethylene terephthalate having a thickness of 125 µm, and the following composition A was uniformly kneaded and dispersed, the viscosity was adjusted, and a polishing layer mixed with a curing agent was used. A polishing liquid was applied and dried to form a polishing layer, which was cut into a predetermined size to prepare a sample of a polishing body.

In each of Examples 1 to 4, as shown in Table 1 below, the abrasive was silica (average particle size: 0.1 μm).
And the amount of the functional group (sulfonic acid group) of the binder (Y × 10
^-4 equivalents / g), and Example 5 was the same as Example 1 except that the abrasive was titanium oxide (average particle size: 0.1 μm). The functional groups of the binder are all free functional groups (SO ₃ H).

Aluminum and silica were simultaneously polished by the polished body of the above embodiment, and the step on the polished surface was measured. The silicon surface was polished, and the metal ion concentration on the polished silicon surface was measured. It is shown in Table 1.

<Comparative Examples 1-4> Table 1 shows Comparative Examples 1-4.
The results of the same polishing test performed on the polishing body of Example 1 are also shown. Comparative Example 1 is an example of a binder that does not include a functional group that captures metal ions with respect to Examples 1 to 4,
Comparative Examples 2 and 3 are examples of a polishing agent having a high Mohs hardness of 8 or 9, Comparative Example 4 is an example of a polishing agent having a low Mohs hardness of 5, and the binders of Comparative Examples 2 to 4 are the same as those of Example 1. The same is true.

From the results shown in Table 1, in the polishing bodies according to Examples 1 to 5 of the present invention, the step in simultaneous polishing of different kinds of materials is 3 to
Good polishing can be performed with a small smoothness of 5 nm, and the metal ion concentration on the silicon surface after polishing is 80 to 100 ppb, and a good result is obtained with a small amount of contamination. On the other hand, in Comparative Example 1, since the binder does not include a functional group that captures metal ions, the level difference is small but the amount of metal ion contamination on the silicon surface is large. In Comparative Examples 2 and 3 in which the Mohs height of the polishing agent was high, the step was large and the smoothness was not obtained, and the amount of metal ion contamination on the silicon surface was also large. Further, in Comparative Example 4 in which the Mohs altitude of the abrasive was low, the step was a small value, but the amount of metal ion contamination on the silicon surface was a large value.

[Coating Composition for Abrasive Layer: A] Abrasive (Material: X, average particle size: 0.1 μm) 100 parts Binder (polyester polyurethane: neopentyl glycol / caprolactone / phthalic acid / diphenylmethane diisocyanate = 3 / 2.1 / 4.7 / 1.0 mol, SO ₃ H content 100% by weight, content Y × 10 ^-4 eq / g) 10 parts Binder (isocyanate) 2 parts Dispersant (sulfosuccinate) 0.1 part Diluent (methyl ethyl ketone) 150 parts

[0060]

[Table 1]

The polishing conditions in Table 1 are as follows.
Rotating at 0 rpm, the polishing body feed speed is 100 mm / min
And the polishing time is 30 seconds. Step measurement test, after polishing the measurement surface of aluminum and silica first flat,
The flat surface was placed sideways and polished at the same time under the above conditions, and the polished surface step between the polished aluminum and silica was measured. The metal ion concentration was measured by polishing the silicon surface for 30 seconds under the above conditions, and measuring the metal ion concentration on the silicon surface.

Claims (4)

[Claims] 1. A polishing body comprising a flexible support provided with a polishing layer comprising fine abrasive powder and a binder, wherein the fine abrasive particles have a Mohs hardness of 6 to 7 and an average particle size of 40 to 1000 nm. A polishing body for polishing semiconductors, comprising 60% or more of a body, wherein the binder contains a binder having a functional group for capturing metal ions. 2. The polishing body according to claim 1, wherein the polishing agent contains at least one of silica, zirconia, titanium oxide, cerium oxide, red iron oxide, and garnet. 3. The center line average surface roughness Ra of the polishing layer surface.
3 is 1 to 5000 nm. 4. The polishing body according to claim 2, wherein the amount of metal ion contamination from the polishing body when polishing the metal is such that Na, K, and Cr are 150 ppb or less.